ATE389242T1 - Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren - Google Patents

Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

Info

Publication number
ATE389242T1
ATE389242T1 AT05701511T AT05701511T ATE389242T1 AT E389242 T1 ATE389242 T1 AT E389242T1 AT 05701511 T AT05701511 T AT 05701511T AT 05701511 T AT05701511 T AT 05701511T AT E389242 T1 ATE389242 T1 AT E389242T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistors
vertical field
spacer
passage
Prior art date
Application number
AT05701511T
Other languages
German (de)
English (en)
Inventor
Toshiharu Furukawa
Mark Hakey
Steven Holmes
David Horak
Peter Mitchell
Larry Nesbit
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE389242T1 publication Critical patent/ATE389242T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/707—Integrated with dissimilar structures on a common substrate having different types of nanoscale structures or devices on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y10S977/721—On a silicon substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
AT05701511T 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren ATE389242T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/767,039 US7211844B2 (en) 2004-01-29 2004-01-29 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

Publications (1)

Publication Number Publication Date
ATE389242T1 true ATE389242T1 (de) 2008-03-15

Family

ID=34807627

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05701511T ATE389242T1 (de) 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

Country Status (11)

Country Link
US (2) US7211844B2 (enExample)
EP (1) EP1709700B1 (enExample)
JP (1) JP4521409B2 (enExample)
KR (1) KR100974162B1 (enExample)
CN (1) CN100568573C (enExample)
AT (1) ATE389242T1 (enExample)
DE (1) DE602005005302T2 (enExample)
IL (1) IL177126A (enExample)
RU (1) RU2338683C2 (enExample)
TW (1) TWI335669B (enExample)
WO (1) WO2005076382A1 (enExample)

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Also Published As

Publication number Publication date
DE602005005302D1 (de) 2008-04-24
KR20060125845A (ko) 2006-12-06
RU2006130863A (ru) 2008-03-10
JP2007520073A (ja) 2007-07-19
TW200537687A (en) 2005-11-16
EP1709700A1 (en) 2006-10-11
WO2005076382A1 (en) 2005-08-18
US20050266627A1 (en) 2005-12-01
RU2338683C2 (ru) 2008-11-20
TWI335669B (en) 2011-01-01
US20050167740A1 (en) 2005-08-04
JP4521409B2 (ja) 2010-08-11
KR100974162B1 (ko) 2010-08-04
EP1709700B1 (en) 2008-03-12
IL177126A (en) 2010-06-30
CN100568573C (zh) 2009-12-09
DE602005005302T2 (de) 2009-03-12
CN1910767A (zh) 2007-02-07
US7329567B2 (en) 2008-02-12
IL177126A0 (en) 2006-12-10
US7211844B2 (en) 2007-05-01

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