ATE377630T1 - Siliciumhaltige verbindung, zusammensetzung und isolierfilm - Google Patents

Siliciumhaltige verbindung, zusammensetzung und isolierfilm

Info

Publication number
ATE377630T1
ATE377630T1 AT05011594T AT05011594T ATE377630T1 AT E377630 T1 ATE377630 T1 AT E377630T1 AT 05011594 T AT05011594 T AT 05011594T AT 05011594 T AT05011594 T AT 05011594T AT E377630 T1 ATE377630 T1 AT E377630T1
Authority
AT
Austria
Prior art keywords
composition
insulating film
silicon compound
integer
formula
Prior art date
Application number
AT05011594T
Other languages
English (en)
Inventor
Kensuke Morita
Morio Yagihara
Koji Wariishi
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE377630T1 publication Critical patent/ATE377630T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT05011594T 2004-05-31 2005-05-30 Siliciumhaltige verbindung, zusammensetzung und isolierfilm ATE377630T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004161361 2004-05-31
JP2005075136A JP4610379B2 (ja) 2004-05-31 2005-03-16 ケイ素含有化合物、該化合物を含有する組成物及び絶縁材料

Publications (1)

Publication Number Publication Date
ATE377630T1 true ATE377630T1 (de) 2007-11-15

Family

ID=35057136

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05011594T ATE377630T1 (de) 2004-05-31 2005-05-30 Siliciumhaltige verbindung, zusammensetzung und isolierfilm

Country Status (6)

Country Link
US (1) US7534904B2 (de)
EP (1) EP1602692B1 (de)
JP (1) JP4610379B2 (de)
KR (1) KR20060048135A (de)
AT (1) ATE377630T1 (de)
DE (1) DE602005003163T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4542927B2 (ja) * 2005-03-17 2010-09-15 富士フイルム株式会社 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス
JP2007091844A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 重合体および膜形成用組成物
JP5003288B2 (ja) * 2007-05-30 2012-08-15 株式会社Ｓｕｍｃｏ シリコンウェーハの評価方法およびシリコンウェーハの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
JP2000302791A (ja) * 1999-04-20 2000-10-31 Fujitsu Ltd シリコン化合物、絶縁膜形成材料及び半導体装置
JP4026386B2 (ja) * 2001-12-26 2007-12-26 チッソ株式会社 新規高分子化合物、該高分子前駆体、および該高分子前駆体を用いた薄膜形成方法
KR101227664B1 (ko) 2002-01-31 2013-01-29 도소 가부시키가이샤 유기실란화합물을 포함하여 구성되는 절연막용 재료, 그 제조방법 및 반도체장치
US7514709B2 (en) * 2003-04-11 2009-04-07 Silecs Oy Organo-silsesquioxane polymers for forming low-k dielectrics

Also Published As

Publication number Publication date
DE602005003163D1 (de) 2007-12-20
DE602005003163T2 (de) 2008-08-28
US7534904B2 (en) 2009-05-19
US20050267308A1 (en) 2005-12-01
EP1602692A1 (de) 2005-12-07
JP4610379B2 (ja) 2011-01-12
EP1602692B1 (de) 2007-11-07
KR20060048135A (ko) 2006-05-18
JP2006016596A (ja) 2006-01-19

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Legal Events

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