ATE371956T1 - Halbleiterbauelemente und ihr peripherieabschluss - Google Patents

Halbleiterbauelemente und ihr peripherieabschluss

Info

Publication number
ATE371956T1
ATE371956T1 AT02711147T AT02711147T ATE371956T1 AT E371956 T1 ATE371956 T1 AT E371956T1 AT 02711147 T AT02711147 T AT 02711147T AT 02711147 T AT02711147 T AT 02711147T AT E371956 T1 ATE371956 T1 AT E371956T1
Authority
AT
Austria
Prior art keywords
voltage
peripheral area
peripheral
sustaining zone
regions
Prior art date
Application number
AT02711147T
Other languages
English (en)
Inventor
Dalen Rob Van
Christelle Rochefort
Godefridus Hurkx
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE371956T1 publication Critical patent/ATE371956T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrotherapy Devices (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Small-Scale Networks (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
AT02711147T 2001-02-15 2002-02-13 Halbleiterbauelemente und ihr peripherieabschluss ATE371956T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0103715.9A GB0103715D0 (en) 2001-02-15 2001-02-15 Semicondutor devices and their peripheral termination

Publications (1)

Publication Number Publication Date
ATE371956T1 true ATE371956T1 (de) 2007-09-15

Family

ID=9908785

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02711147T ATE371956T1 (de) 2001-02-15 2002-02-13 Halbleiterbauelemente und ihr peripherieabschluss

Country Status (8)

Country Link
US (1) US6724021B2 (de)
EP (1) EP1364410B1 (de)
JP (1) JP2004519103A (de)
KR (1) KR100847991B1 (de)
AT (1) ATE371956T1 (de)
DE (1) DE60222094T2 (de)
GB (1) GB0103715D0 (de)
WO (1) WO2002065552A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0214618D0 (en) * 2002-06-25 2002-08-07 Koninkl Philips Electronics Nv Semiconductor device with edge structure
US6900523B2 (en) * 2002-07-03 2005-05-31 International Rectifier Corporation Termination structure for MOSgated power devices
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
GB0407363D0 (en) * 2004-03-31 2004-05-05 Koninkl Philips Electronics Nv Trench semiconductor device and method of manufacturing it
WO2006126164A2 (en) * 2005-05-24 2006-11-30 Nxp B.V. Edge termination for semiconductor device
US7902605B2 (en) * 2005-12-06 2011-03-08 St Microelectronics Sa Resistor in an integrated circuit
US8080848B2 (en) * 2006-05-11 2011-12-20 Fairchild Semiconductor Corporation High voltage semiconductor device with lateral series capacitive structure
CN100544028C (zh) * 2006-09-19 2009-09-23 电子科技大学 利用场板达到最佳表面横向通量的横向高压器件
US7564099B2 (en) * 2007-03-12 2009-07-21 International Rectifier Corporation Monolithic MOSFET and Schottky diode device
JP5049744B2 (ja) * 2007-11-05 2012-10-17 株式会社日立製作所 配線基板の製造方法およびその配線基板
JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
US8502346B2 (en) * 2010-12-23 2013-08-06 Alpha And Omega Semiconductor Incorporated Monolithic IGBT and diode structure for quasi-resonant converters
KR101248664B1 (ko) * 2011-08-01 2013-03-28 주식회사 케이이씨 전력 반도체 소자
KR101248669B1 (ko) * 2011-08-01 2013-04-03 주식회사 케이이씨 전력 반도체 소자
KR101279216B1 (ko) 2011-08-17 2013-06-26 주식회사 케이이씨 반도체 장치의 제조 방법
CN103531628B (zh) * 2012-07-02 2017-08-08 朱江 一种沟槽肖特基mos半导体装置
CN103579371A (zh) * 2012-07-27 2014-02-12 朱江 一种沟槽终端结构肖特基器件及其制备方法
US11081554B2 (en) * 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
CN109166923B (zh) * 2018-08-28 2021-03-30 电子科技大学 一种屏蔽栅mosfet
CN116799028A (zh) * 2022-03-16 2023-09-22 华为数字能源技术有限公司 一种二极管和功率电路
CN115295627B (zh) * 2022-08-25 2023-09-05 中国电子科技集团公司第二十四研究所 高压功率半导体器件及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2071411B (en) 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
DE19638437C2 (de) * 1996-09-19 2002-02-21 Infineon Technologies Ag Durch Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung
EP0917738A2 (de) * 1997-04-28 1999-05-26 Koninklijke Philips Electronics N.V. Laterde mos-transistoranordnung
JP3322852B2 (ja) * 1998-06-26 2002-09-09 日清紡績株式会社 連続気泡硬質ポリウレタンフォーム成形体およびその製造方法
GB9815021D0 (en) * 1998-07-11 1998-09-09 Koninkl Philips Electronics Nv Semiconductor power device manufacture
DE19848828C2 (de) 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
US6452230B1 (en) * 1998-12-23 2002-09-17 International Rectifier Corporation High voltage mosgated device with trenches to reduce on-resistance
JP4774580B2 (ja) * 1999-08-23 2011-09-14 富士電機株式会社 超接合半導体素子
GB0003186D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device
GB0003184D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device
GB0003185D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv An insulated gate field effect device
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置

Also Published As

Publication number Publication date
DE60222094T2 (de) 2008-05-21
KR100847991B1 (ko) 2008-07-22
EP1364410A2 (de) 2003-11-26
JP2004519103A (ja) 2004-06-24
DE60222094D1 (de) 2007-10-11
EP1364410B1 (de) 2007-08-29
US20020134998A1 (en) 2002-09-26
WO2002065552A2 (en) 2002-08-22
US6724021B2 (en) 2004-04-20
GB0103715D0 (en) 2001-04-04
WO2002065552A3 (en) 2002-12-19
KR20020092432A (ko) 2002-12-11

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