DE60041233D1 - GaAs MOSFET mit niedrigem Anschaltwiderstand und niedriger Kapazität - Google Patents
GaAs MOSFET mit niedrigem Anschaltwiderstand und niedriger KapazitätInfo
- Publication number
- DE60041233D1 DE60041233D1 DE60041233T DE60041233T DE60041233D1 DE 60041233 D1 DE60041233 D1 DE 60041233D1 DE 60041233 T DE60041233 T DE 60041233T DE 60041233 T DE60041233 T DE 60041233T DE 60041233 D1 DE60041233 D1 DE 60041233D1
- Authority
- DE
- Germany
- Prior art keywords
- low
- resistance
- capacitance
- gaas mosfet
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/412,847 US6369408B1 (en) | 1999-10-06 | 1999-10-06 | GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60041233D1 true DE60041233D1 (de) | 2009-02-12 |
Family
ID=23634740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60041233T Expired - Lifetime DE60041233D1 (de) | 1999-10-06 | 2000-10-03 | GaAs MOSFET mit niedrigem Anschaltwiderstand und niedriger Kapazität |
Country Status (4)
Country | Link |
---|---|
US (2) | US6369408B1 (de) |
EP (1) | EP1091416B1 (de) |
JP (1) | JP4558911B2 (de) |
DE (1) | DE60041233D1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7038295B2 (en) * | 2003-07-18 | 2006-05-02 | Semiconductor Components Industries, L.L.C. | DC/DC converter with depletion mode compound semiconductor field effect transistor switching device |
US7429506B2 (en) * | 2005-09-27 | 2008-09-30 | Freescale Semiconductor, Inc. | Process of making a III-V compound semiconductor heterostructure MOSFET |
US20070090405A1 (en) * | 2005-09-27 | 2007-04-26 | Matthias Passlack | Charge compensated dielectric layer structure and method of making the same |
US7432565B2 (en) * | 2005-09-27 | 2008-10-07 | Freescale Semiconductor, Inc. | III-V compound semiconductor heterostructure MOSFET device |
US7682912B2 (en) | 2006-10-31 | 2010-03-23 | Freescale Semiconductor, Inc. | III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same |
US20100088855A1 (en) * | 2008-10-14 | 2010-04-15 | Magna Mirrors Of America, Inc. | Vehicle door handle assembly |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3890215A (en) * | 1974-02-08 | 1975-06-17 | Bell Telephone Labor Inc | Electrochemical thinning of semiconductor devices |
JPS5587483A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Mis type semiconductor device |
US4805003A (en) * | 1987-11-10 | 1989-02-14 | Motorola Inc. | GaAs MESFET |
AU2864692A (en) * | 1989-03-02 | 1994-02-14 | Thunderbird Technologies, Inc. | Fermi threshold silicon-on-insulator field effect transistor |
US5132753A (en) * | 1990-03-23 | 1992-07-21 | Siliconix Incorporated | Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
JP2746482B2 (ja) * | 1991-02-14 | 1998-05-06 | 三菱電機株式会社 | 電界効果型トランジスタ及びその製造方法 |
US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
US5357130A (en) * | 1992-07-24 | 1994-10-18 | Hughes Aircraft Company | Low-noise cryogenic MOSFET |
US5406096A (en) * | 1993-02-22 | 1995-04-11 | Texas Instruments Incorporated | Device and method for high performance high voltage operation |
US5303138A (en) * | 1993-04-29 | 1994-04-12 | At&T Bell Laboratories | Low loss synchronous rectifier for application to clamped-mode power converters |
US5550089A (en) * | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
TW360982B (en) * | 1996-01-26 | 1999-06-11 | Matsushita Electric Works Ltd | Thin film transistor of silicon-on-insulator type |
US5781420A (en) * | 1996-07-18 | 1998-07-14 | International Power Devices, Inc. | Single ended forward DC-to-DC converter providing enhanced resetting for synchronous rectification |
-
1999
- 1999-10-06 US US09/412,847 patent/US6369408B1/en not_active Expired - Lifetime
-
2000
- 2000-10-03 DE DE60041233T patent/DE60041233D1/de not_active Expired - Lifetime
- 2000-10-03 EP EP00308684A patent/EP1091416B1/de not_active Expired - Lifetime
- 2000-10-06 JP JP2000307041A patent/JP4558911B2/ja not_active Expired - Lifetime
-
2001
- 2001-08-10 US US09/927,194 patent/US6682962B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1091416A3 (de) | 2003-03-05 |
JP4558911B2 (ja) | 2010-10-06 |
EP1091416B1 (de) | 2008-12-31 |
EP1091416A2 (de) | 2001-04-11 |
US6369408B1 (en) | 2002-04-09 |
JP2001189452A (ja) | 2001-07-10 |
US6682962B2 (en) | 2004-01-27 |
US20010050393A1 (en) | 2001-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |