ATE358333T1 - Integration optoelektronischer bauelemente - Google Patents
Integration optoelektronischer bauelementeInfo
- Publication number
- ATE358333T1 ATE358333T1 AT02756474T AT02756474T ATE358333T1 AT E358333 T1 ATE358333 T1 AT E358333T1 AT 02756474 T AT02756474 T AT 02756474T AT 02756474 T AT02756474 T AT 02756474T AT E358333 T1 ATE358333 T1 AT E358333T1
- Authority
- AT
- Austria
- Prior art keywords
- active device
- contacts
- electronic chip
- top active
- integration
- Prior art date
Links
- 230000010354 integration Effects 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/896,983 US6790691B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/896,189 US6620642B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/897,158 US6753197B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/897,160 US6724794B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US36599802P | 2002-03-19 | 2002-03-19 | |
US36603202P | 2002-03-19 | 2002-03-19 | |
US36599602P | 2002-03-19 | 2002-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE358333T1 true ATE358333T1 (de) | 2007-04-15 |
Family
ID=27569722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02756474T ATE358333T1 (de) | 2001-06-29 | 2002-06-28 | Integration optoelektronischer bauelemente |
Country Status (7)
Country | Link |
---|---|
EP (3) | EP1399952A4 (de) |
KR (5) | KR20040015748A (de) |
CN (4) | CN100367584C (de) |
AT (1) | ATE358333T1 (de) |
CA (4) | CA2447368A1 (de) |
DE (1) | DE60219161T2 (de) |
WO (4) | WO2003003425A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2407394A (en) | 2003-10-23 | 2005-04-27 | Dow Corning Ltd | Optical waveguide with two differently dimensioned waveguiding layers on substrate |
JP2005134755A (ja) * | 2003-10-31 | 2005-05-26 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
US20080278061A1 (en) * | 2004-06-29 | 2008-11-13 | Koninklijke Philips Electronics, N.V. | Light Emitting Diode Module |
CN100372086C (zh) * | 2005-05-26 | 2008-02-27 | 宏齐科技股份有限公司 | 具有控制芯片的光电芯片双片式基材封装构造的制造方法 |
GB2442991A (en) * | 2006-07-11 | 2008-04-23 | Firecomms Ltd | Optical emitter assembly and mounting of surface-emitting optical devices |
US11294136B2 (en) | 2008-08-29 | 2022-04-05 | Corning Optical Communications LLC | High density and bandwidth fiber optic apparatuses and related equipment and methods |
US20100259823A1 (en) * | 2009-04-09 | 2010-10-14 | General Electric Company | Nanostructured anti-reflection coatings and associated methods and devices |
WO2010148336A1 (en) * | 2009-06-19 | 2010-12-23 | Corning Cable Systems Llc | High density and bandwidth fiber optic apparatuses and related equipment and methods |
CN102200612A (zh) * | 2011-04-27 | 2011-09-28 | 中国科学院微电子研究所 | 嵌入光纤的玻璃板及其制造方法 |
CN104422987B (zh) * | 2013-09-03 | 2018-06-22 | 中国科学院微电子研究所 | 互连结构 |
CN104766903B (zh) * | 2013-12-03 | 2018-06-29 | 光澄科技股份有限公司 | 集成模块及其形成方法 |
FR3023066B1 (fr) * | 2014-06-30 | 2017-10-27 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande |
JP2016076543A (ja) * | 2014-10-03 | 2016-05-12 | 株式会社東芝 | 固体撮像装置の製造方法 |
CN104362196A (zh) * | 2014-11-25 | 2015-02-18 | 苏州矩阵光电有限公司 | 一种铟镓砷红外探测器及其制备方法 |
DE102015106712A1 (de) * | 2015-04-30 | 2016-11-03 | Osram Opto Semiconductors Gmbh | Anordnung mit einem Substrat und einem Halbleiterlaser |
US10267988B2 (en) | 2017-06-30 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photonic package and method forming same |
US10833483B2 (en) * | 2017-12-07 | 2020-11-10 | Lumentum Operations Llc | Emitter array having structure for submount attachment |
JP7021618B2 (ja) * | 2018-08-10 | 2022-02-17 | オムロン株式会社 | レーザダイオードアレイデバイスの製造方法、レーザ発光回路及び測距装置 |
WO2022020257A1 (en) * | 2020-07-20 | 2022-01-27 | Apple Inc. | Photonic integrated circuits with controlled collapse chip connections |
US11977256B2 (en) | 2022-02-25 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package comprising optically coupled IC chips |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4202007A (en) * | 1978-06-23 | 1980-05-06 | International Business Machines Corporation | Multi-layer dielectric planar structure having an internal conductor pattern characterized with opposite terminations disposed at a common edge surface of the layers |
GB2107469B (en) * | 1981-09-21 | 1985-09-18 | Peter Mansfield | Nuclear magnetic resonance methods |
US5070596A (en) * | 1988-05-18 | 1991-12-10 | Harris Corporation | Integrated circuits including photo-optical devices and pressure transducers and method of fabrication |
JPH0831617B2 (ja) * | 1990-04-18 | 1996-03-27 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
US5408319A (en) * | 1992-09-01 | 1995-04-18 | International Business Machines Corporation | Optical wavelength demultiplexing filter for passing a selected one of a plurality of optical wavelengths |
JPH06237016A (ja) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 光ファイバモジュールおよびその製造方法 |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
US5729038A (en) * | 1995-12-15 | 1998-03-17 | Harris Corporation | Silicon-glass bonded wafers |
US5472914A (en) * | 1994-07-14 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer joined optoelectronic integrated circuits and method |
JPH08111559A (ja) * | 1994-10-07 | 1996-04-30 | Hitachi Ltd | 半導体発受光素子及び装置 |
US5814889A (en) * | 1995-06-05 | 1998-09-29 | Harris Corporation | Intergrated circuit with coaxial isolation and method |
JPH10247747A (ja) * | 1997-03-05 | 1998-09-14 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JPH10335383A (ja) * | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP3334584B2 (ja) * | 1997-11-21 | 2002-10-15 | イビデン株式会社 | 多層電子部品搭載用基板及びその製造方法 |
US6075710A (en) * | 1998-02-11 | 2000-06-13 | Express Packaging Systems, Inc. | Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips |
JP3202192B2 (ja) | 1998-05-20 | 2001-08-27 | 松下電器産業株式会社 | 液晶表示装置、及びその製造方法 |
JPH11307869A (ja) * | 1998-04-22 | 1999-11-05 | Furukawa Electric Co Ltd:The | アレイ光素子モジュール |
DE19838430C2 (de) * | 1998-08-24 | 2002-02-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Arrays von Photodetektoren |
US6343171B1 (en) * | 1998-10-09 | 2002-01-29 | Fujitsu Limited | Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making |
JP2000307025A (ja) * | 1999-04-23 | 2000-11-02 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法および電子部品実装体 |
US6153927A (en) * | 1999-09-30 | 2000-11-28 | Intel Corporation | Packaged integrated processor and spatial light modulator |
JP2001117509A (ja) * | 1999-10-14 | 2001-04-27 | Nippon Hoso Kyokai <Nhk> | 有機el表示装置 |
US6580031B2 (en) * | 2000-03-14 | 2003-06-17 | Amerasia International Technology, Inc. | Method for making a flexible circuit interposer having high-aspect ratio conductors |
US7205400B2 (en) * | 2000-07-31 | 2007-04-17 | Agilent Technologies, Inc. | Array fabrication |
JP2002189447A (ja) * | 2001-10-01 | 2002-07-05 | Canon Inc | エレクトロ・ルミネセンス素子及び装置、並びにその製造法 |
-
2002
- 2002-06-28 CN CNB028130898A patent/CN100367584C/zh not_active Expired - Lifetime
- 2002-06-28 KR KR10-2003-7016813A patent/KR20040015748A/ko not_active Application Discontinuation
- 2002-06-28 KR KR1020097011845A patent/KR100964927B1/ko active IP Right Grant
- 2002-06-28 EP EP02753370A patent/EP1399952A4/de not_active Withdrawn
- 2002-06-28 DE DE60219161T patent/DE60219161T2/de not_active Expired - Lifetime
- 2002-06-28 KR KR1020037016814A patent/KR100936525B1/ko active IP Right Grant
- 2002-06-28 CA CA002447368A patent/CA2447368A1/en not_active Abandoned
- 2002-06-28 CA CA002447365A patent/CA2447365A1/en not_active Abandoned
- 2002-06-28 WO PCT/US2002/022089 patent/WO2003003425A1/en not_active Application Discontinuation
- 2002-06-28 WO PCT/US2002/022291 patent/WO2003003426A1/en active IP Right Grant
- 2002-06-28 EP EP02749716A patent/EP1410424A4/de not_active Withdrawn
- 2002-06-28 WO PCT/US2002/022293 patent/WO2003003427A1/en active Application Filing
- 2002-06-28 CA CA002447369A patent/CA2447369A1/en not_active Abandoned
- 2002-06-28 CA CA002447345A patent/CA2447345A1/en not_active Abandoned
- 2002-06-28 CN CNB028131002A patent/CN1285098C/zh not_active Expired - Lifetime
- 2002-06-28 CN CNB028130979A patent/CN1274005C/zh not_active Expired - Lifetime
- 2002-06-28 WO PCT/US2002/020695 patent/WO2003003420A1/en not_active Application Discontinuation
- 2002-06-28 CN CNA028130901A patent/CN1579002A/zh active Pending
- 2002-06-28 AT AT02756474T patent/ATE358333T1/de not_active IP Right Cessation
- 2002-06-28 KR KR10-2003-7016822A patent/KR20040015284A/ko not_active Application Discontinuation
- 2002-06-28 EP EP02756474A patent/EP1399953B1/de not_active Expired - Lifetime
- 2002-06-28 KR KR1020037016812A patent/KR100918512B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2003003420A1 (en) | 2003-01-09 |
KR100918512B1 (ko) | 2009-09-24 |
CA2447345A1 (en) | 2003-01-09 |
CA2447368A1 (en) | 2003-01-09 |
CN100367584C (zh) | 2008-02-06 |
CN1522460A (zh) | 2004-08-18 |
CA2447369A1 (en) | 2003-01-09 |
CN1274005C (zh) | 2006-09-06 |
WO2003003426A1 (en) | 2003-01-09 |
DE60219161T2 (de) | 2007-12-13 |
CN1522459A (zh) | 2004-08-18 |
CN1526156A (zh) | 2004-09-01 |
WO2003003427A1 (en) | 2003-01-09 |
CN1579002A (zh) | 2005-02-09 |
CA2447365A1 (en) | 2003-01-09 |
KR20040015284A (ko) | 2004-02-18 |
EP1410424A4 (de) | 2007-03-21 |
EP1410424A1 (de) | 2004-04-21 |
DE60219161D1 (de) | 2007-05-10 |
KR100936525B1 (ko) | 2010-01-13 |
CN1285098C (zh) | 2006-11-15 |
EP1399953A1 (de) | 2004-03-24 |
EP1399952A4 (de) | 2007-03-21 |
KR20040064219A (ko) | 2004-07-16 |
KR100964927B1 (ko) | 2010-06-25 |
EP1399953A4 (de) | 2004-09-01 |
WO2003003425A1 (en) | 2003-01-09 |
KR20090082274A (ko) | 2009-07-29 |
EP1399953B1 (de) | 2007-03-28 |
KR20040015748A (ko) | 2004-02-19 |
KR20040060855A (ko) | 2004-07-06 |
EP1399952A1 (de) | 2004-03-24 |
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