ATE358333T1 - Integration optoelektronischer bauelemente - Google Patents

Integration optoelektronischer bauelemente

Info

Publication number
ATE358333T1
ATE358333T1 AT02756474T AT02756474T ATE358333T1 AT E358333 T1 ATE358333 T1 AT E358333T1 AT 02756474 T AT02756474 T AT 02756474T AT 02756474 T AT02756474 T AT 02756474T AT E358333 T1 ATE358333 T1 AT E358333T1
Authority
AT
Austria
Prior art keywords
active device
contacts
electronic chip
top active
integration
Prior art date
Application number
AT02756474T
Other languages
English (en)
Inventor
Greg Dudoff
John Trezza
Original Assignee
Xanoptix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/896,983 external-priority patent/US6790691B2/en
Priority claimed from US09/896,189 external-priority patent/US6620642B2/en
Priority claimed from US09/897,158 external-priority patent/US6753197B2/en
Priority claimed from US09/897,160 external-priority patent/US6724794B2/en
Application filed by Xanoptix Inc filed Critical Xanoptix Inc
Application granted granted Critical
Publication of ATE358333T1 publication Critical patent/ATE358333T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4249Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4292Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217Removal of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/0234Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
AT02756474T 2001-06-29 2002-06-28 Integration optoelektronischer bauelemente ATE358333T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US09/896,983 US6790691B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/896,189 US6620642B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/897,158 US6753197B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/897,160 US6724794B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US36599802P 2002-03-19 2002-03-19
US36603202P 2002-03-19 2002-03-19
US36599602P 2002-03-19 2002-03-19

Publications (1)

Publication Number Publication Date
ATE358333T1 true ATE358333T1 (de) 2007-04-15

Family

ID=27569722

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02756474T ATE358333T1 (de) 2001-06-29 2002-06-28 Integration optoelektronischer bauelemente

Country Status (7)

Country Link
EP (3) EP1399952A4 (de)
KR (5) KR20040015748A (de)
CN (4) CN100367584C (de)
AT (1) ATE358333T1 (de)
CA (4) CA2447368A1 (de)
DE (1) DE60219161T2 (de)
WO (4) WO2003003425A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2407394A (en) 2003-10-23 2005-04-27 Dow Corning Ltd Optical waveguide with two differently dimensioned waveguiding layers on substrate
JP2005134755A (ja) * 2003-10-31 2005-05-26 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
US20080278061A1 (en) * 2004-06-29 2008-11-13 Koninklijke Philips Electronics, N.V. Light Emitting Diode Module
CN100372086C (zh) * 2005-05-26 2008-02-27 宏齐科技股份有限公司 具有控制芯片的光电芯片双片式基材封装构造的制造方法
GB2442991A (en) * 2006-07-11 2008-04-23 Firecomms Ltd Optical emitter assembly and mounting of surface-emitting optical devices
US11294136B2 (en) 2008-08-29 2022-04-05 Corning Optical Communications LLC High density and bandwidth fiber optic apparatuses and related equipment and methods
US20100259823A1 (en) * 2009-04-09 2010-10-14 General Electric Company Nanostructured anti-reflection coatings and associated methods and devices
WO2010148336A1 (en) * 2009-06-19 2010-12-23 Corning Cable Systems Llc High density and bandwidth fiber optic apparatuses and related equipment and methods
CN102200612A (zh) * 2011-04-27 2011-09-28 中国科学院微电子研究所 嵌入光纤的玻璃板及其制造方法
CN104422987B (zh) * 2013-09-03 2018-06-22 中国科学院微电子研究所 互连结构
CN104766903B (zh) * 2013-12-03 2018-06-29 光澄科技股份有限公司 集成模块及其形成方法
FR3023066B1 (fr) * 2014-06-30 2017-10-27 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande
JP2016076543A (ja) * 2014-10-03 2016-05-12 株式会社東芝 固体撮像装置の製造方法
CN104362196A (zh) * 2014-11-25 2015-02-18 苏州矩阵光电有限公司 一种铟镓砷红外探测器及其制备方法
DE102015106712A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Anordnung mit einem Substrat und einem Halbleiterlaser
US10267988B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic package and method forming same
US10833483B2 (en) * 2017-12-07 2020-11-10 Lumentum Operations Llc Emitter array having structure for submount attachment
JP7021618B2 (ja) * 2018-08-10 2022-02-17 オムロン株式会社 レーザダイオードアレイデバイスの製造方法、レーザ発光回路及び測距装置
WO2022020257A1 (en) * 2020-07-20 2022-01-27 Apple Inc. Photonic integrated circuits with controlled collapse chip connections
US11977256B2 (en) 2022-02-25 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package comprising optically coupled IC chips

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202007A (en) * 1978-06-23 1980-05-06 International Business Machines Corporation Multi-layer dielectric planar structure having an internal conductor pattern characterized with opposite terminations disposed at a common edge surface of the layers
GB2107469B (en) * 1981-09-21 1985-09-18 Peter Mansfield Nuclear magnetic resonance methods
US5070596A (en) * 1988-05-18 1991-12-10 Harris Corporation Integrated circuits including photo-optical devices and pressure transducers and method of fabrication
JPH0831617B2 (ja) * 1990-04-18 1996-03-27 三菱電機株式会社 太陽電池及びその製造方法
US5408319A (en) * 1992-09-01 1995-04-18 International Business Machines Corporation Optical wavelength demultiplexing filter for passing a selected one of a plurality of optical wavelengths
JPH06237016A (ja) * 1993-02-09 1994-08-23 Matsushita Electric Ind Co Ltd 光ファイバモジュールおよびその製造方法
US5488504A (en) * 1993-08-20 1996-01-30 Martin Marietta Corp. Hybridized asymmetric fabry-perot quantum well light modulator
US5729038A (en) * 1995-12-15 1998-03-17 Harris Corporation Silicon-glass bonded wafers
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
JPH08111559A (ja) * 1994-10-07 1996-04-30 Hitachi Ltd 半導体発受光素子及び装置
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
JPH10247747A (ja) * 1997-03-05 1998-09-14 Toshiba Corp 半導体発光素子およびその製造方法
JPH10335383A (ja) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3334584B2 (ja) * 1997-11-21 2002-10-15 イビデン株式会社 多層電子部品搭載用基板及びその製造方法
US6075710A (en) * 1998-02-11 2000-06-13 Express Packaging Systems, Inc. Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips
JP3202192B2 (ja) 1998-05-20 2001-08-27 松下電器産業株式会社 液晶表示装置、及びその製造方法
JPH11307869A (ja) * 1998-04-22 1999-11-05 Furukawa Electric Co Ltd:The アレイ光素子モジュール
DE19838430C2 (de) * 1998-08-24 2002-02-28 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Arrays von Photodetektoren
US6343171B1 (en) * 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
JP2000307025A (ja) * 1999-04-23 2000-11-02 Matsushita Electric Ind Co Ltd 電子部品とその製造方法および電子部品実装体
US6153927A (en) * 1999-09-30 2000-11-28 Intel Corporation Packaged integrated processor and spatial light modulator
JP2001117509A (ja) * 1999-10-14 2001-04-27 Nippon Hoso Kyokai <Nhk> 有機el表示装置
US6580031B2 (en) * 2000-03-14 2003-06-17 Amerasia International Technology, Inc. Method for making a flexible circuit interposer having high-aspect ratio conductors
US7205400B2 (en) * 2000-07-31 2007-04-17 Agilent Technologies, Inc. Array fabrication
JP2002189447A (ja) * 2001-10-01 2002-07-05 Canon Inc エレクトロ・ルミネセンス素子及び装置、並びにその製造法

Also Published As

Publication number Publication date
WO2003003420A1 (en) 2003-01-09
KR100918512B1 (ko) 2009-09-24
CA2447345A1 (en) 2003-01-09
CA2447368A1 (en) 2003-01-09
CN100367584C (zh) 2008-02-06
CN1522460A (zh) 2004-08-18
CA2447369A1 (en) 2003-01-09
CN1274005C (zh) 2006-09-06
WO2003003426A1 (en) 2003-01-09
DE60219161T2 (de) 2007-12-13
CN1522459A (zh) 2004-08-18
CN1526156A (zh) 2004-09-01
WO2003003427A1 (en) 2003-01-09
CN1579002A (zh) 2005-02-09
CA2447365A1 (en) 2003-01-09
KR20040015284A (ko) 2004-02-18
EP1410424A4 (de) 2007-03-21
EP1410424A1 (de) 2004-04-21
DE60219161D1 (de) 2007-05-10
KR100936525B1 (ko) 2010-01-13
CN1285098C (zh) 2006-11-15
EP1399953A1 (de) 2004-03-24
EP1399952A4 (de) 2007-03-21
KR20040064219A (ko) 2004-07-16
KR100964927B1 (ko) 2010-06-25
EP1399953A4 (de) 2004-09-01
WO2003003425A1 (en) 2003-01-09
KR20090082274A (ko) 2009-07-29
EP1399953B1 (de) 2007-03-28
KR20040015748A (ko) 2004-02-19
KR20040060855A (ko) 2004-07-06
EP1399952A1 (de) 2004-03-24

Similar Documents

Publication Publication Date Title
ATE358333T1 (de) Integration optoelektronischer bauelemente
WO2005020279A3 (en) Semiconductor device having electrical contact from opposite sides and method therefor
WO2003015165A3 (de) Elektronisches bauteil mit einem kunststoffgehäuse und verfahren zu seiner herstellung
TW200419760A (en) Wafer level package, multi-package stack, and method of manufacturing the same
SG99937A1 (en) An electronic device and a method of manufacturing the same
TW200639980A (en) Lid used in package structure and the package structure of having the same
ATE545958T1 (de) Halbleiterbauelement und dessen herstellungsverfahren
TW200742249A (en) Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
TW200802789A (en) Stackable molded packages and methods of making the same
ATE429032T1 (de) Direktaufbauschicht auf einer verkapselten chipverpackung
EP1659625A3 (de) Dispositif à semiconducteur et son procédé de fabrication, carte électronique et dispositif électronique
TW200503111A (en) Semiconductor device and method of manufacturing the same
JP2004103843A5 (de)
TW560698U (en) Structure of chip package
TW200515549A (en) Flip-chip LED package structure
TW200505055A (en) Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
EP0971406A3 (de) Halbleiteranordnung in Chipgrösse
TW200717723A (en) Semiconductor device and method of manufacturing the same
TW200620585A (en) Semiconductor package structure and method for fabricating the same
DE60315954D1 (de) Laminierte kontakte in sockel
TW200605371A (en) Integrated circuit package with improved power signal connection
WO2004015773A3 (de) Halbleiterwafer mit elektrisch verbundenen kontakt- und prüfflächen
FR2837983B1 (fr) Circuit integre en hyperfrequences comprenant une pastille semiconductrice
WO2005065325A3 (en) Optimized contact design for thermosonic bonding of flip-chip devices
TWI256708B (en) Flip-chip package, and flip-chip packaging method

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties