ATE339774T1 - Isolierstoff für integrierten schaltkreis aus porösem silizium-oxikarbid - Google Patents
Isolierstoff für integrierten schaltkreis aus porösem silizium-oxikarbidInfo
- Publication number
- ATE339774T1 ATE339774T1 AT98952272T AT98952272T ATE339774T1 AT E339774 T1 ATE339774 T1 AT E339774T1 AT 98952272 T AT98952272 T AT 98952272T AT 98952272 T AT98952272 T AT 98952272T AT E339774 T1 ATE339774 T1 AT E339774T1
- Authority
- AT
- Austria
- Prior art keywords
- circuit
- insulator
- interconnection lines
- silicon oxycarbide
- integrated circuit
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/950,319 US6350704B1 (en) | 1997-10-14 | 1997-10-14 | Porous silicon oxycarbide integrated circuit insulator |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE339774T1 true ATE339774T1 (de) | 2006-10-15 |
Family
ID=25490274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98952272T ATE339774T1 (de) | 1997-10-14 | 1998-10-14 | Isolierstoff für integrierten schaltkreis aus porösem silizium-oxikarbid |
Country Status (8)
Country | Link |
---|---|
US (4) | US6350704B1 (de) |
EP (1) | EP1029354B1 (de) |
JP (1) | JP2003510795A (de) |
KR (1) | KR100416681B1 (de) |
AT (1) | ATE339774T1 (de) |
AU (1) | AU9801298A (de) |
DE (1) | DE69835900T2 (de) |
WO (1) | WO1999019910A1 (de) |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW408433B (en) * | 1997-06-30 | 2000-10-11 | Hitachi Ltd | Method for fabricating semiconductor integrated circuit |
US6350704B1 (en) * | 1997-10-14 | 2002-02-26 | Micron Technology Inc. | Porous silicon oxycarbide integrated circuit insulator |
US6462371B1 (en) * | 1998-11-24 | 2002-10-08 | Micron Technology Inc. | Films doped with carbon for use in integrated circuit technology |
EP1077479A1 (de) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Behandlung nach der Abscheidung um die Eigenschaften eines niedrig-k Si-O-C Films zu verbessern |
ATE414326T1 (de) | 1999-08-17 | 2008-11-15 | Applied Materials Inc | Methode und apparat zur verbesserung der eigenschaften eines niedrig-k si-o-c filmes |
DE69940114D1 (de) | 1999-08-17 | 2009-01-29 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
US7276788B1 (en) * | 1999-08-25 | 2007-10-02 | Micron Technology, Inc. | Hydrophobic foamed insulators for high density circuits |
US6413827B2 (en) * | 2000-02-14 | 2002-07-02 | Paul A. Farrar | Low dielectric constant shallow trench isolation |
US6677209B2 (en) | 2000-02-14 | 2004-01-13 | Micron Technology, Inc. | Low dielectric constant STI with SOI devices |
US6890847B1 (en) | 2000-02-22 | 2005-05-10 | Micron Technology, Inc. | Polynorbornene foam insulation for integrated circuits |
EP1172847A3 (de) * | 2000-07-10 | 2004-07-28 | Interuniversitair Micro-Elektronica Centrum Vzw | Methode, eine poröse Siliziumoxidschicht herzustellen |
US6753270B1 (en) | 2000-08-04 | 2004-06-22 | Applied Materials Inc. | Process for depositing a porous, low dielectric constant silicon oxide film |
AU2001288954A1 (en) | 2000-09-13 | 2002-03-26 | Shipley Company, L.L.C. | Electronic device manufacture |
US6610362B1 (en) * | 2000-11-20 | 2003-08-26 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
US6936533B2 (en) * | 2000-12-08 | 2005-08-30 | Samsung Electronics, Co., Ltd. | Method of fabricating semiconductor devices having low dielectric interlayer insulation layer |
US6383924B1 (en) * | 2000-12-13 | 2002-05-07 | Micron Technology, Inc. | Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
KR100687531B1 (ko) * | 2001-05-09 | 2007-02-27 | 에이에스엠 저펜 가부시기가이샤 | 반도체 장치용 저유전상수 절연막의 형성방법 |
US7142577B2 (en) * | 2001-05-16 | 2006-11-28 | Micron Technology, Inc. | Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon |
US7476925B2 (en) * | 2001-08-30 | 2009-01-13 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US7132348B2 (en) * | 2002-03-25 | 2006-11-07 | Micron Technology, Inc. | Low k interconnect dielectric using surface transformation |
US7045430B2 (en) * | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7589029B2 (en) * | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7135421B2 (en) * | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US7154140B2 (en) | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
US6996009B2 (en) | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US6888739B2 (en) * | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
US6970370B2 (en) | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
US7847344B2 (en) | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6884739B2 (en) * | 2002-08-15 | 2005-04-26 | Micron Technology Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
US7199023B2 (en) * | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US7153754B2 (en) * | 2002-08-29 | 2006-12-26 | Micron Technology, Inc. | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same |
US7084078B2 (en) * | 2002-08-29 | 2006-08-01 | Micron Technology, Inc. | Atomic layer deposited lanthanide doped TiOx dielectric films |
FR2848036B1 (fr) * | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
US6958302B2 (en) * | 2002-12-04 | 2005-10-25 | Micron Technology, Inc. | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 |
US7101813B2 (en) * | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
EP1435657A1 (de) * | 2002-12-30 | 2004-07-07 | STMicroelectronics S.r.l. | Festwertspeicherzelle und Herstellungsverfahren |
US7135369B2 (en) * | 2003-03-31 | 2006-11-14 | Micron Technology, Inc. | Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9 |
US7008854B2 (en) * | 2003-05-21 | 2006-03-07 | Micron Technology, Inc. | Silicon oxycarbide substrates for bonded silicon on insulator |
US7273788B2 (en) * | 2003-05-21 | 2007-09-25 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
US7192824B2 (en) * | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US6929984B2 (en) * | 2003-07-21 | 2005-08-16 | Micron Technology Inc. | Gettering using voids formed by surface transformation |
US7153753B2 (en) * | 2003-08-05 | 2006-12-26 | Micron Technology, Inc. | Strained Si/SiGe/SOI islands and processes of making same |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US20050137882A1 (en) * | 2003-12-17 | 2005-06-23 | Cameron Don T. | Method for authenticating goods |
US7601649B2 (en) | 2004-08-02 | 2009-10-13 | Micron Technology, Inc. | Zirconium-doped tantalum oxide films |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
US7230296B2 (en) * | 2004-11-08 | 2007-06-12 | International Business Machines Corporation | Self-aligned low-k gate cap |
US20060125030A1 (en) * | 2004-12-13 | 2006-06-15 | Micron Technology, Inc. | Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7560395B2 (en) * | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US8330202B2 (en) * | 2005-02-23 | 2012-12-11 | Micron Technology, Inc. | Germanium-silicon-carbide floating gates in memories |
US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7572695B2 (en) * | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
US7858458B2 (en) | 2005-06-14 | 2010-12-28 | Micron Technology, Inc. | CMOS fabrication |
US7510983B2 (en) * | 2005-06-14 | 2009-03-31 | Micron Technology, Inc. | Iridium/zirconium oxide structure |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US20070049023A1 (en) * | 2005-08-29 | 2007-03-01 | Micron Technology, Inc. | Zirconium-doped gadolinium oxide films |
US7410910B2 (en) * | 2005-08-31 | 2008-08-12 | Micron Technology, Inc. | Lanthanum aluminum oxynitride dielectric films |
FR2890490A1 (fr) * | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
US20070082130A1 (en) * | 2005-10-07 | 2007-04-12 | Asm Japan K.K. | Method for foming metal wiring structure |
US7785658B2 (en) * | 2005-10-07 | 2010-08-31 | Asm Japan K.K. | Method for forming metal wiring structure |
US7709402B2 (en) * | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7511317B2 (en) * | 2006-06-09 | 2009-03-31 | International Business Machines Corporation | Porous silicon for isolation region formation and related structure |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
TWI355046B (en) * | 2007-07-10 | 2011-12-21 | Nanya Technology Corp | Two bit memory structure and method of making the |
US8764993B2 (en) * | 2008-04-03 | 2014-07-01 | General Electric Company | SiOC membranes and methods of making the same |
US8058138B2 (en) | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
JP4858791B2 (ja) * | 2009-05-22 | 2012-01-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
DE102014111781B4 (de) * | 2013-08-19 | 2022-08-11 | Korea Atomic Energy Research Institute | Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht |
US9218447B2 (en) | 2014-01-10 | 2015-12-22 | International Business Machines Corporation | Automatic test pattern generation (ATPG) considering crosstalk effects |
KR102272553B1 (ko) * | 2015-01-19 | 2021-07-02 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US9892800B2 (en) | 2015-09-30 | 2018-02-13 | Sunrise Memory Corporation | Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US9842651B2 (en) | 2015-11-25 | 2017-12-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin film transistor strings |
US10741581B2 (en) | 2018-07-12 | 2020-08-11 | Sunrise Memory Corporation | Fabrication method for a 3-dimensional NOR memory array |
US11751391B2 (en) * | 2018-07-12 | 2023-09-05 | Sunrise Memory Corporation | Methods for fabricating a 3-dimensional memory structure of nor memory strings |
WO2021127218A1 (en) | 2019-12-19 | 2021-06-24 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor |
TW202220191A (zh) * | 2020-07-21 | 2022-05-16 | 美商日升存儲公司 | 用於製造nor記憶體串之3維記憶體結構之方法 |
TW202205635A (zh) * | 2020-07-21 | 2022-02-01 | 美商日升存儲公司 | 用於製造nor記憶體串之3維記憶體結構之方法 |
US11937424B2 (en) | 2020-08-31 | 2024-03-19 | Sunrise Memory Corporation | Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same |
WO2022108848A1 (en) | 2020-11-17 | 2022-05-27 | Sunrise Memory Corporation | Methods for reducing disturb errors by refreshing data alongside programming or erase operations |
TW202310429A (zh) | 2021-07-16 | 2023-03-01 | 美商日升存儲公司 | 薄膜鐵電電晶體的三維記憶體串陣列 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01235254A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 半導体装置及びその製造方法 |
US5180694A (en) * | 1989-06-01 | 1993-01-19 | General Electric Company | Silicon-oxy-carbide glass method of preparation and articles |
US4981820A (en) * | 1989-07-28 | 1991-01-01 | General Electric Company | Cellular silicon-oxy-carbide glass from foamed silicone resins |
US5380553A (en) | 1990-12-24 | 1995-01-10 | Dow Corning Corporation | Reverse direction pyrolysis processing |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
FR2685851B1 (fr) | 1991-12-30 | 1994-02-04 | Alcatel Cit | Dispositif de soutien et de guidage de cables de transmission de signaux electriques ou lumineux. |
US5470801A (en) * | 1993-06-28 | 1995-11-28 | Lsi Logic Corporation | Low dielectric constant insulation layer for integrated circuit structure and method of making same |
US5470802A (en) | 1994-05-20 | 1995-11-28 | Texas Instruments Incorporated | Method of making a semiconductor device using a low dielectric constant material |
US5488015A (en) | 1994-05-20 | 1996-01-30 | Texas Instruments Incorporated | Method of making an interconnect structure with an integrated low density dielectric |
US5527737A (en) * | 1994-05-27 | 1996-06-18 | Texas Instruments Incorporated | Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction |
US5494858A (en) | 1994-06-07 | 1996-02-27 | Texas Instruments Incorporated | Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications |
US5504042A (en) | 1994-06-23 | 1996-04-02 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
US5525857A (en) * | 1994-08-19 | 1996-06-11 | Texas Instruments Inc. | Low density, high porosity material as gate dielectric for field emission device |
US6187604B1 (en) | 1994-09-16 | 2001-02-13 | Micron Technology, Inc. | Method of making field emitters using porous silicon |
US5818071A (en) | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
US5530581A (en) | 1995-05-31 | 1996-06-25 | Eic Laboratories, Inc. | Protective overlayer material and electro-optical coating using same |
US5821621A (en) * | 1995-10-12 | 1998-10-13 | Texas Instruments Incorporated | Low capacitance interconnect structure for integrated circuits |
EP0775669B1 (de) | 1995-11-16 | 2001-05-02 | Texas Instruments Incorporated | Wenig flüchtiges Lösungsmittel enthaltender Vorläufer für nanoporöses Aerogel |
US5827780A (en) * | 1996-04-01 | 1998-10-27 | Hsia; Liang Choo | Additive metalization using photosensitive polymer as RIE mask and part of composite insulator |
US5770275A (en) * | 1996-08-23 | 1998-06-23 | Raman; Narayan K. | Molecular sieving silica membrane fabrication process |
US6054751A (en) | 1996-09-18 | 2000-04-25 | Denso Corporation | Semiconductor integrated circuit |
JPH10178066A (ja) | 1996-10-15 | 1998-06-30 | Toray Ind Inc | 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート |
JP4082626B2 (ja) | 1996-11-19 | 2008-04-30 | 松下電器産業株式会社 | 層間絶縁膜形成用材料及び層間絶縁膜 |
KR19980064176A (ko) | 1996-12-17 | 1998-10-07 | 윌리엄비.켐플러 | 집적 회로 유전체 |
US6255156B1 (en) | 1997-02-07 | 2001-07-03 | Micron Technology, Inc. | Method for forming porous silicon dioxide insulators and related structures |
US5866197A (en) | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
US5886368A (en) * | 1997-07-29 | 1999-03-23 | Micron Technology, Inc. | Transistor with silicon oxycarbide gate and methods of fabrication and use |
US6251470B1 (en) | 1997-10-09 | 2001-06-26 | Micron Technology, Inc. | Methods of forming insulating materials, and methods of forming insulating materials around a conductive component |
US6350704B1 (en) * | 1997-10-14 | 2002-02-26 | Micron Technology Inc. | Porous silicon oxycarbide integrated circuit insulator |
-
1997
- 1997-10-14 US US08/950,319 patent/US6350704B1/en not_active Expired - Lifetime
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1998
- 1998-10-14 WO PCT/US1998/021588 patent/WO1999019910A1/en active IP Right Grant
- 1998-10-14 EP EP98952272A patent/EP1029354B1/de not_active Expired - Lifetime
- 1998-10-14 JP JP2000516375A patent/JP2003510795A/ja active Pending
- 1998-10-14 DE DE69835900T patent/DE69835900T2/de not_active Expired - Lifetime
- 1998-10-14 AU AU98012/98A patent/AU9801298A/en not_active Abandoned
- 1998-10-14 AT AT98952272T patent/ATE339774T1/de not_active IP Right Cessation
- 1998-10-14 KR KR10-2000-7003937A patent/KR100416681B1/ko not_active IP Right Cessation
-
2000
- 2000-03-02 US US09/517,029 patent/US6313518B1/en not_active Expired - Lifetime
-
2001
- 2001-07-20 US US09/909,532 patent/US6803326B2/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR20010031077A (ko) | 2001-04-16 |
US20010038132A1 (en) | 2001-11-08 |
US6803326B2 (en) | 2004-10-12 |
DE69835900D1 (de) | 2006-10-26 |
US6313518B1 (en) | 2001-11-06 |
EP1029354A1 (de) | 2000-08-23 |
EP1029354B1 (de) | 2006-09-13 |
US20020048968A1 (en) | 2002-04-25 |
US6350704B1 (en) | 2002-02-26 |
WO1999019910A1 (en) | 1999-04-22 |
KR100416681B1 (ko) | 2004-01-31 |
US20020079557A1 (en) | 2002-06-27 |
AU9801298A (en) | 1999-05-03 |
JP2003510795A (ja) | 2003-03-18 |
DE69835900T2 (de) | 2007-01-18 |
US6710428B2 (en) | 2004-03-23 |
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