ATE31855T1 - Cmos-inverter. - Google Patents
Cmos-inverter.Info
- Publication number
- ATE31855T1 ATE31855T1 AT84111726T AT84111726T ATE31855T1 AT E31855 T1 ATE31855 T1 AT E31855T1 AT 84111726 T AT84111726 T AT 84111726T AT 84111726 T AT84111726 T AT 84111726T AT E31855 T1 ATE31855 T1 AT E31855T1
- Authority
- AT
- Austria
- Prior art keywords
- inverter
- cmos
- cmos inverter
- fet
- operating voltage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
- H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
- H03K19/09485—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors with active depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833339253 DE3339253A1 (de) | 1983-10-28 | 1983-10-28 | Cmos-inverter |
| EP84111726A EP0140188B1 (de) | 1983-10-28 | 1984-10-01 | CMOS-Inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE31855T1 true ATE31855T1 (de) | 1988-01-15 |
Family
ID=6213021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84111726T ATE31855T1 (de) | 1983-10-28 | 1984-10-01 | Cmos-inverter. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4675544A (OSRAM) |
| EP (1) | EP0140188B1 (OSRAM) |
| JP (1) | JPS60111529A (OSRAM) |
| AT (1) | ATE31855T1 (OSRAM) |
| DE (2) | DE3339253A1 (OSRAM) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4656373A (en) * | 1984-11-26 | 1987-04-07 | Rca Corporation | High-speed voltage level shift circuit |
| GB2192105A (en) * | 1986-06-25 | 1987-12-31 | Philips Nv | Cmos-input circuit |
| US4709162A (en) * | 1986-09-18 | 1987-11-24 | International Business Machines Corporation | Off-chip driver circuits |
| US4825106A (en) * | 1987-04-08 | 1989-04-25 | Ncr Corporation | MOS no-leak circuit |
| NL8800234A (nl) * | 1988-02-01 | 1989-09-01 | Philips Nv | Geintegreerde schakeling met logische circuits en ten minste een push-pull-trap. |
| JPH0379121A (ja) * | 1989-08-23 | 1991-04-04 | Hitachi Ltd | 半導体集積回路装置 |
| DE69118214T2 (de) * | 1990-01-23 | 1996-10-31 | Nippon Electric Co | Digitaler Halbleiterschaltkreis |
| US5128560A (en) * | 1991-03-22 | 1992-07-07 | Micron Technology, Inc. | Boosted supply output driver circuit for driving an all N-channel output stage |
| US5359243A (en) * | 1993-04-16 | 1994-10-25 | Altera Corporation | Fast TTL to CMOS level converting buffer with low standby power |
| JP3693369B2 (ja) * | 1994-08-31 | 2005-09-07 | 株式会社 沖マイクロデザイン | 不揮発性メモリ |
| JPH0878433A (ja) * | 1994-08-31 | 1996-03-22 | Nec Corp | 半導体装置 |
| US5852370A (en) * | 1994-12-22 | 1998-12-22 | Texas Instruments Incorporated | Integrated circuits for low power dissipation in signaling between different-voltage on chip regions |
| JP3662326B2 (ja) * | 1996-01-09 | 2005-06-22 | 株式会社ルネサステクノロジ | レベル変換回路 |
| US6198330B1 (en) * | 1999-12-07 | 2001-03-06 | Analog Devices, Inc. | Adaptive-load inverters and methods |
| JP2002190723A (ja) * | 2000-12-20 | 2002-07-05 | Nippon Precision Circuits Inc | 発振制御回路 |
| US6870895B2 (en) * | 2002-12-19 | 2005-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and driving method thereof |
| US8447077B2 (en) | 2006-09-11 | 2013-05-21 | Validity Sensors, Inc. | Method and apparatus for fingerprint motion tracking using an in-line array |
| EP1800243B1 (en) | 2004-10-04 | 2010-08-11 | Validity Sensors, Inc. | Fingerprint sensing assemblies comprising a substrate |
| JP4772542B2 (ja) * | 2006-03-15 | 2011-09-14 | 株式会社東芝 | 電力変換装置 |
| US8116540B2 (en) | 2008-04-04 | 2012-02-14 | Validity Sensors, Inc. | Apparatus and method for reducing noise in fingerprint sensing circuits |
| GB2474999B (en) | 2008-07-22 | 2013-02-20 | Validity Sensors Inc | System and method for securing a device component |
| US8278946B2 (en) | 2009-01-15 | 2012-10-02 | Validity Sensors, Inc. | Apparatus and method for detecting finger activity on a fingerprint sensor |
| US8600122B2 (en) | 2009-01-15 | 2013-12-03 | Validity Sensors, Inc. | Apparatus and method for culling substantially redundant data in fingerprint sensing circuits |
| US20100176892A1 (en) * | 2009-01-15 | 2010-07-15 | Validity Sensors, Inc. | Ultra Low Power Oscillator |
| JP5603479B2 (ja) * | 2009-07-03 | 2014-10-08 | セイコーインスツル株式会社 | Cmos入力バッファ回路 |
| JP5468882B2 (ja) * | 2009-07-03 | 2014-04-09 | セイコーインスツル株式会社 | Cmos入力バッファ回路 |
| US9336428B2 (en) | 2009-10-30 | 2016-05-10 | Synaptics Incorporated | Integrated fingerprint sensor and display |
| US9666635B2 (en) | 2010-02-19 | 2017-05-30 | Synaptics Incorporated | Fingerprint sensing circuit |
| US8716613B2 (en) | 2010-03-02 | 2014-05-06 | Synaptics Incoporated | Apparatus and method for electrostatic discharge protection |
| US9001040B2 (en) | 2010-06-02 | 2015-04-07 | Synaptics Incorporated | Integrated fingerprint sensor and navigation device |
| US8594393B2 (en) | 2011-01-26 | 2013-11-26 | Validity Sensors | System for and method of image reconstruction with dual line scanner using line counts |
| US8538097B2 (en) | 2011-01-26 | 2013-09-17 | Validity Sensors, Inc. | User input utilizing dual line scanner apparatus and method |
| US9195877B2 (en) | 2011-12-23 | 2015-11-24 | Synaptics Incorporated | Methods and devices for capacitive image sensing |
| US9251329B2 (en) | 2012-03-27 | 2016-02-02 | Synaptics Incorporated | Button depress wakeup and wakeup strategy |
| US9137438B2 (en) | 2012-03-27 | 2015-09-15 | Synaptics Incorporated | Biometric object sensor and method |
| US9600709B2 (en) | 2012-03-28 | 2017-03-21 | Synaptics Incorporated | Methods and systems for enrolling biometric data |
| KR20140028601A (ko) | 2012-08-29 | 2014-03-10 | 에스케이하이닉스 주식회사 | 입출력센스앰프 |
| US9143078B2 (en) | 2012-11-29 | 2015-09-22 | Infineon Technologies Ag | Power inverter including SiC JFETs |
| US9665762B2 (en) | 2013-01-11 | 2017-05-30 | Synaptics Incorporated | Tiered wakeup strategy |
| USD776664S1 (en) * | 2015-05-20 | 2017-01-17 | Chaya Coleena Hendrick | Smart card |
| US11626864B1 (en) * | 2021-12-08 | 2023-04-11 | Macronix International Co., Ltd. | Level shift circuit |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3678293A (en) * | 1971-01-08 | 1972-07-18 | Gen Instrument Corp | Self-biasing inverter |
| JPS5318377A (en) * | 1976-08-03 | 1978-02-20 | Toshiba Corp | Logical operation circuit |
| US4216390A (en) * | 1978-10-04 | 1980-08-05 | Rca Corporation | Level shift circuit |
| DE3174470D1 (en) * | 1980-09-26 | 1986-05-28 | Toshiba Kk | Dynamic signal generation circuit |
| JPS5891680A (ja) * | 1981-11-26 | 1983-05-31 | Fujitsu Ltd | 半導体装置 |
| US4469959A (en) * | 1982-03-15 | 1984-09-04 | Motorola, Inc. | Input buffer |
| JPS5949020A (ja) * | 1982-09-13 | 1984-03-21 | Toshiba Corp | 論理回路 |
| US4501978A (en) * | 1982-11-24 | 1985-02-26 | Rca Corporation | Level shift interface circuit |
| JPS59134918A (ja) * | 1983-01-24 | 1984-08-02 | Toshiba Corp | ラツチ回路 |
| US4508983A (en) * | 1983-02-10 | 1985-04-02 | Motorola, Inc. | MOS Analog switch driven by complementary, minimally skewed clock signals |
| US4555642A (en) * | 1983-09-22 | 1985-11-26 | Standard Microsystems Corporation | Low power CMOS input buffer circuit |
| US4563595A (en) * | 1983-10-27 | 1986-01-07 | National Semiconductor Corporation | CMOS Schmitt trigger circuit for TTL logic levels |
-
1983
- 1983-10-28 DE DE19833339253 patent/DE3339253A1/de not_active Withdrawn
-
1984
- 1984-10-01 EP EP84111726A patent/EP0140188B1/de not_active Expired
- 1984-10-01 AT AT84111726T patent/ATE31855T1/de not_active IP Right Cessation
- 1984-10-01 DE DE8484111726T patent/DE3468600D1/de not_active Expired
- 1984-10-26 JP JP59225609A patent/JPS60111529A/ja active Pending
-
1986
- 1986-09-17 US US06/908,311 patent/US4675544A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0140188A2 (de) | 1985-05-08 |
| EP0140188A3 (OSRAM) | 1985-06-05 |
| EP0140188B1 (de) | 1988-01-07 |
| DE3339253A1 (de) | 1985-05-09 |
| US4675544A (en) | 1987-06-23 |
| JPS60111529A (ja) | 1985-06-18 |
| DE3468600D1 (de) | 1988-02-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |