JPS57196627A - Electronic circuit device - Google Patents
Electronic circuit deviceInfo
- Publication number
- JPS57196627A JPS57196627A JP8103881A JP8103881A JPS57196627A JP S57196627 A JPS57196627 A JP S57196627A JP 8103881 A JP8103881 A JP 8103881A JP 8103881 A JP8103881 A JP 8103881A JP S57196627 A JPS57196627 A JP S57196627A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- misfets
- input signal
- misfete
- push
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Read Only Memory (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE: To reduce a through-current, by providing a delay means for an input signal, in a series circuit consisting of MISFETs receiving the input signal and a signal phase-inverting the input signal.
CONSTITUTION: A push-pull circuit PC is provided with two enhancement depletion type inverters and a push-pull output circuit consisting of enhancement type MISFETs E3 and E4 and acts as a prestage circuit of a bootstrap circuit BC. A delay means consisting of a resistor R1 and capacitors Cs1 and Cs2 is provided between the output of an MISFETE1 and the gate of an MISFETE4, and the delay characteristics are set so that they are coincident with those of the inverter consisting of the MISFET E2 and a D2. Thus, since the MISFETs E3 and E4 are not simultaneously turned on, the power consumption can be decreased.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8103881A JPS57196627A (en) | 1981-05-29 | 1981-05-29 | Electronic circuit device |
FR828201790A FR2507028B1 (en) | 1981-05-29 | 1982-02-04 | ELECTRONIC CIRCUIT DEVICE, ESPECIALLY FOR USE IN AN ELECTRICALLY PROGRAMMABLE DEAD MEMORY |
GB8212635A GB2099651A (en) | 1981-05-29 | 1982-04-30 | Electronic circuit device |
IT21574/82A IT1152220B (en) | 1981-05-29 | 1982-05-28 | ELECTRONIC STAGE OUTPUT IN COUNTER-PHASE, PARTICULARLY FOR ASSOCIATION TO ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORIES |
DE19823220205 DE3220205A1 (en) | 1981-05-29 | 1982-05-28 | ELECTRICAL CIRCUIT ARRANGEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8103881A JPS57196627A (en) | 1981-05-29 | 1981-05-29 | Electronic circuit device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57075291A Division JPS57201332A (en) | 1982-05-07 | 1982-05-07 | Electronic circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57196627A true JPS57196627A (en) | 1982-12-02 |
Family
ID=13735274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8103881A Pending JPS57196627A (en) | 1981-05-29 | 1981-05-29 | Electronic circuit device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS57196627A (en) |
DE (1) | DE3220205A1 (en) |
FR (1) | FR2507028B1 (en) |
GB (1) | GB2099651A (en) |
IT (1) | IT1152220B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134796A (en) * | 1984-07-25 | 1986-02-19 | Toshiba Corp | Row decoder circuit of non-volatile memory |
JP2017126991A (en) * | 2011-09-30 | 2017-07-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3427454A1 (en) * | 1984-07-25 | 1986-01-30 | Siemens AG, 1000 Berlin und 8000 München | INTEGRATED CIRCUIT FOR A DYNAMIC SEMICONDUCTOR MEMORY CONSTRUCTED IN COMPLEMENTARY CIRCUIT TECHNOLOGY |
IT1213241B (en) * | 1984-11-07 | 1989-12-14 | Ates Componenti Elettron | EPROM MEMORY MATRIX WITH MOS SYMETRIC ELEMENTARY CELLS AND ITS WRITING METHOD. |
DE102004064138B4 (en) * | 2003-01-09 | 2012-03-29 | Schaeffler Technologies Gmbh & Co. Kg | Master cylinder for clutch release systems |
US7969226B2 (en) | 2009-05-07 | 2011-06-28 | Semisouth Laboratories, Inc. | High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4843565A (en) * | 1971-09-30 | 1973-06-23 | ||
JPS5135272A (en) * | 1974-09-20 | 1976-03-25 | Hitachi Ltd | |
JPS5378782A (en) * | 1976-12-23 | 1978-07-12 | Fujitsu Ltd | Transmission characteristic variable mos semiconductor device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
GB1431199A (en) * | 1972-05-13 | 1976-04-07 | Sony Corp | Variable impedance circuits |
US3806738A (en) * | 1972-12-29 | 1974-04-23 | Ibm | Field effect transistor push-pull driver |
DE2355095B2 (en) * | 1973-11-03 | 1975-10-23 | Bosse Telefonbau Gmbh, 1000 Berlin | Circuit arrangement to avoid the effects of contact bounce |
JPS5198938A (en) * | 1975-02-26 | 1976-08-31 | ||
JPS51142925A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Address buffer circuit |
US4071783A (en) * | 1976-11-29 | 1978-01-31 | International Business Machines Corporation | Enhancement/depletion mode field effect transistor driver |
US4101788A (en) * | 1977-03-18 | 1978-07-18 | Xerox Corporation | Mos buffer circuit |
US4285001A (en) * | 1978-12-26 | 1981-08-18 | Board Of Trustees Of Leland Stanford Jr. University | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material |
-
1981
- 1981-05-29 JP JP8103881A patent/JPS57196627A/en active Pending
-
1982
- 1982-02-04 FR FR828201790A patent/FR2507028B1/en not_active Expired
- 1982-04-30 GB GB8212635A patent/GB2099651A/en not_active Withdrawn
- 1982-05-28 IT IT21574/82A patent/IT1152220B/en active
- 1982-05-28 DE DE19823220205 patent/DE3220205A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4843565A (en) * | 1971-09-30 | 1973-06-23 | ||
JPS5135272A (en) * | 1974-09-20 | 1976-03-25 | Hitachi Ltd | |
JPS5378782A (en) * | 1976-12-23 | 1978-07-12 | Fujitsu Ltd | Transmission characteristic variable mos semiconductor device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134796A (en) * | 1984-07-25 | 1986-02-19 | Toshiba Corp | Row decoder circuit of non-volatile memory |
JPH0348596B2 (en) * | 1984-07-25 | 1991-07-24 | Tokyo Shibaura Electric Co | |
JP2017126991A (en) * | 2011-09-30 | 2017-07-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US10304872B2 (en) | 2011-09-30 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10497723B2 (en) | 2011-09-30 | 2019-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10916571B2 (en) | 2011-09-30 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11257853B2 (en) | 2011-09-30 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11557613B2 (en) | 2011-09-30 | 2023-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11901377B2 (en) | 2011-09-30 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR2507028B1 (en) | 1989-02-03 |
FR2507028A1 (en) | 1982-12-03 |
GB2099651A (en) | 1982-12-08 |
DE3220205A1 (en) | 1983-06-01 |
IT8221574A0 (en) | 1982-05-28 |
IT1152220B (en) | 1986-12-31 |
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