IT1152220B - ELECTRONIC STAGE OUTPUT IN COUNTER-PHASE, PARTICULARLY FOR ASSOCIATION TO ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORIES - Google Patents

ELECTRONIC STAGE OUTPUT IN COUNTER-PHASE, PARTICULARLY FOR ASSOCIATION TO ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORIES

Info

Publication number
IT1152220B
IT1152220B IT21574/82A IT2157482A IT1152220B IT 1152220 B IT1152220 B IT 1152220B IT 21574/82 A IT21574/82 A IT 21574/82A IT 2157482 A IT2157482 A IT 2157482A IT 1152220 B IT1152220 B IT 1152220B
Authority
IT
Italy
Prior art keywords
memories
association
counter
phase
programmable read
Prior art date
Application number
IT21574/82A
Other languages
Italian (it)
Other versions
IT8221574A0 (en
Inventor
Fukuda Monoru
Fuhusawa Kazunori
Yamatani Shigeru
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8221574A0 publication Critical patent/IT8221574A0/en
Application granted granted Critical
Publication of IT1152220B publication Critical patent/IT1152220B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
IT21574/82A 1981-05-29 1982-05-28 ELECTRONIC STAGE OUTPUT IN COUNTER-PHASE, PARTICULARLY FOR ASSOCIATION TO ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORIES IT1152220B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8103881A JPS57196627A (en) 1981-05-29 1981-05-29 Electronic circuit device

Publications (2)

Publication Number Publication Date
IT8221574A0 IT8221574A0 (en) 1982-05-28
IT1152220B true IT1152220B (en) 1986-12-31

Family

ID=13735274

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21574/82A IT1152220B (en) 1981-05-29 1982-05-28 ELECTRONIC STAGE OUTPUT IN COUNTER-PHASE, PARTICULARLY FOR ASSOCIATION TO ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORIES

Country Status (5)

Country Link
JP (1) JPS57196627A (en)
DE (1) DE3220205A1 (en)
FR (1) FR2507028B1 (en)
GB (1) GB2099651A (en)
IT (1) IT1152220B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3427454A1 (en) * 1984-07-25 1986-01-30 Siemens AG, 1000 Berlin und 8000 München INTEGRATED CIRCUIT FOR A DYNAMIC SEMICONDUCTOR MEMORY CONSTRUCTED IN COMPLEMENTARY CIRCUIT TECHNOLOGY
JPS6134796A (en) * 1984-07-25 1986-02-19 Toshiba Corp Row decoder circuit of non-volatile memory
IT1213241B (en) * 1984-11-07 1989-12-14 Ates Componenti Elettron EPROM MEMORY MATRIX WITH MOS SYMETRIC ELEMENTARY CELLS AND ITS WRITING METHOD.
EP1437519B1 (en) * 2003-01-09 2007-05-23 LuK Lamellen und Kupplungsbau Beteiligungs KG Master cylinder for clutch release system
US7969226B2 (en) 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
US8736315B2 (en) 2011-09-30 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506851A (en) * 1966-12-14 1970-04-14 North American Rockwell Field effect transistor driver using capacitor feedback
CA934015A (en) * 1971-09-30 1973-09-18 K. Au Kenneth Field effect transistor driver circuit
DE2323471C2 (en) * 1972-05-13 1985-09-12 Sony Corp., Tokio/Tokyo Circuit with variable resistance
US3806738A (en) * 1972-12-29 1974-04-23 Ibm Field effect transistor push-pull driver
DE2355095B2 (en) * 1973-11-03 1975-10-23 Bosse Telefonbau Gmbh, 1000 Berlin Circuit arrangement to avoid the effects of contact bounce
JPS5135272A (en) * 1974-09-20 1976-03-25 Hitachi Ltd
JPS5198938A (en) * 1975-02-26 1976-08-31
JPS51142925A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Address buffer circuit
US4071783A (en) * 1976-11-29 1978-01-31 International Business Machines Corporation Enhancement/depletion mode field effect transistor driver
JPS5378782A (en) * 1976-12-23 1978-07-12 Fujitsu Ltd Transmission characteristic variable mos semiconductor device
US4101788A (en) * 1977-03-18 1978-07-18 Xerox Corporation Mos buffer circuit
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

Also Published As

Publication number Publication date
GB2099651A (en) 1982-12-08
FR2507028B1 (en) 1989-02-03
JPS57196627A (en) 1982-12-02
DE3220205A1 (en) 1983-06-01
FR2507028A1 (en) 1982-12-03
IT8221574A0 (en) 1982-05-28

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