ATE256917T1 - Verfahren und apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem - Google Patents

Verfahren und apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem

Info

Publication number
ATE256917T1
ATE256917T1 AT97932376T AT97932376T ATE256917T1 AT E256917 T1 ATE256917 T1 AT E256917T1 AT 97932376 T AT97932376 T AT 97932376T AT 97932376 T AT97932376 T AT 97932376T AT E256917 T1 ATE256917 T1 AT E256917T1
Authority
AT
Austria
Prior art keywords
voltage
electrostatic chuck
polarity
build
clamping
Prior art date
Application number
AT97932376T
Other languages
English (en)
Inventor
Marc B Kubly
Neil Martin Paul Benjamin
Steven D Germain
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE256917T1 publication Critical patent/ATE256917T1/de

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
AT97932376T 1996-06-28 1997-06-27 Verfahren und apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem ATE256917T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/671,752 US5793192A (en) 1996-06-28 1996-06-28 Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
PCT/US1997/011340 WO1998000861A1 (en) 1996-06-28 1997-06-27 Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system

Publications (1)

Publication Number Publication Date
ATE256917T1 true ATE256917T1 (de) 2004-01-15

Family

ID=24695747

Family Applications (2)

Application Number Title Priority Date Filing Date
AT97932376T ATE256917T1 (de) 1996-06-28 1997-06-27 Verfahren und apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem
AT03022355T ATE409959T1 (de) 1996-06-28 1997-06-27 Apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT03022355T ATE409959T1 (de) 1996-06-28 1997-06-27 Apparate zur klemmung und entklemmung einer halbleiterscheibe in einem scheibenbearbeitungssystem

Country Status (7)

Country Link
US (1) US5793192A (de)
EP (2) EP1376682B1 (de)
JP (1) JP2000514247A (de)
AT (2) ATE256917T1 (de)
AU (1) AU3585197A (de)
DE (2) DE69726858T2 (de)
WO (1) WO1998000861A1 (de)

Families Citing this family (37)

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JP3163973B2 (ja) * 1996-03-26 2001-05-08 日本電気株式会社 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法
TW334609B (en) 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US7583492B2 (en) * 1998-09-30 2009-09-01 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6361645B1 (en) 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
US6259334B1 (en) 1998-12-22 2001-07-10 Lam Research Corporation Methods for controlling an RF matching network
US6188564B1 (en) 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
ATE339801T1 (de) * 2000-06-14 2006-10-15 Herman Allison Elektro-adhäsions-vorrichtung
US6376795B1 (en) * 2000-10-24 2002-04-23 Lsi Logic Corporation Direct current dechucking system
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
US6865065B1 (en) * 2002-01-22 2005-03-08 Advanced Ion Beam Technology, Inc. Semiconductor processing chamber substrate holder method and structure
US7026174B2 (en) * 2002-09-30 2006-04-11 Lam Research Corporation Method for reducing wafer arcing
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
JP2004281783A (ja) * 2003-03-17 2004-10-07 Renesas Technology Corp 半導体処理装置
US6947274B2 (en) * 2003-09-08 2005-09-20 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage
US7193173B2 (en) * 2004-06-30 2007-03-20 Lam Research Corporation Reducing plasma ignition pressure
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
US7864502B2 (en) * 2007-05-15 2011-01-04 International Business Machines Corporation In situ monitoring of wafer charge distribution in plasma processing
US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
US8514544B2 (en) * 2009-08-07 2013-08-20 Trek, Inc. Electrostatic clamp optimizer
JP2010141352A (ja) * 2010-02-26 2010-06-24 Ulvac Japan Ltd 真空処理方法
US8941968B2 (en) 2010-06-08 2015-01-27 Axcelis Technologies, Inc. Heated electrostatic chuck including mechanical clamp capability at high temperature
CN102934218B (zh) * 2010-06-08 2016-05-04 艾克塞利斯科技公司 高温下具有机械夹持能力的受热静电夹头
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9966294B2 (en) * 2013-11-11 2018-05-08 Diablo Capital, Inc. Mobile electrostatic carrier for a semiconductive wafer and a method of using thereof for singulation of the semiconductive wafer
GB201321463D0 (en) * 2013-12-05 2014-01-22 Oxford Instr Nanotechnology Tools Ltd Electrostatic clamping method and apparatus
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
MY174723A (en) 2014-02-07 2020-05-10 Trek Inc System and method for clamping a work piece
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US10923379B2 (en) * 2017-02-15 2021-02-16 Lam Research Corporation Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure

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JPH01112745A (ja) * 1987-10-27 1989-05-01 Fujitsu Ltd 半導体製造装置におけるウエハ離脱方法
JPH0269956A (ja) * 1988-09-05 1990-03-08 Toshiba Corp 静電チャック方法及び静電チャック装置
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
JP2617044B2 (ja) * 1991-03-28 1997-06-04 日本碍子株式会社 ウエハー保持装置およびその制御方法
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH0685045A (ja) * 1992-08-31 1994-03-25 Fujitsu Ltd ウェーハ離脱方法
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JP3257180B2 (ja) * 1993-09-21 2002-02-18 ソニー株式会社 成膜方法
US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5535090A (en) * 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
JPH0855900A (ja) * 1994-08-11 1996-02-27 Fujitsu Ltd 静電吸着方法とその装置と半導体装置の製造方法

Also Published As

Publication number Publication date
EP1376682A1 (de) 2004-01-02
EP0907964B1 (de) 2003-12-17
DE69739023D1 (de) 2008-11-13
EP1376682B1 (de) 2008-10-01
ATE409959T1 (de) 2008-10-15
EP0907964A1 (de) 1999-04-14
DE69726858T2 (de) 2004-11-04
WO1998000861A1 (en) 1998-01-08
AU3585197A (en) 1998-01-21
DE69726858D1 (de) 2004-01-29
JP2000514247A (ja) 2000-10-24
US5793192A (en) 1998-08-11

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