ATE251829T1 - Aktiver linearer sensor - Google Patents

Aktiver linearer sensor

Info

Publication number
ATE251829T1
ATE251829T1 AT99911334T AT99911334T ATE251829T1 AT E251829 T1 ATE251829 T1 AT E251829T1 AT 99911334 T AT99911334 T AT 99911334T AT 99911334 T AT99911334 T AT 99911334T AT E251829 T1 ATE251829 T1 AT E251829T1
Authority
AT
Austria
Prior art keywords
operational amplifier
linear sensor
photosensitive device
fet
active linear
Prior art date
Application number
AT99911334T
Other languages
English (en)
Inventor
Jeffrey J Zarnowski
Matthew A Pace
Original Assignee
Photon Vision Systems L L C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photon Vision Systems L L C filed Critical Photon Vision Systems L L C
Application granted granted Critical
Publication of ATE251829T1 publication Critical patent/ATE251829T1/de

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT99911334T 1998-03-16 1999-03-10 Aktiver linearer sensor ATE251829T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/039,835 US6084229A (en) 1998-03-16 1998-03-16 Complimentary metal oxide semiconductor imaging device
PCT/US1999/005378 WO1999048282A1 (en) 1998-03-16 1999-03-10 Active linear sensor

Publications (1)

Publication Number Publication Date
ATE251829T1 true ATE251829T1 (de) 2003-10-15

Family

ID=21907580

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99911334T ATE251829T1 (de) 1998-03-16 1999-03-10 Aktiver linearer sensor

Country Status (11)

Country Link
US (2) US6084229A (de)
EP (1) EP1062802B1 (de)
JP (1) JP4388696B2 (de)
KR (1) KR100549385B1 (de)
CN (1) CN1200555C (de)
AT (1) ATE251829T1 (de)
AU (1) AU2999899A (de)
CA (1) CA2323486A1 (de)
DE (1) DE69911932T2 (de)
IL (1) IL137832A (de)
WO (1) WO1999048282A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856349B1 (en) * 1996-09-30 2005-02-15 Intel Corporation Method and apparatus for controlling exposure of a CMOS sensor array
USRE38499E1 (en) * 1997-07-21 2004-04-20 Foveon, Inc. Two-stage amplifier for active pixel sensor cell array for reducing fixed pattern noise in the array output
US6590198B1 (en) * 1998-03-16 2003-07-08 Photon Vision Systems, Inc. Video bus for high speed multi-resolution imagers
US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6677995B1 (en) * 1999-02-04 2004-01-13 Agere Systems Inc. Array readout system
JP3601052B2 (ja) * 1999-03-11 2004-12-15 日本電気株式会社 固体撮像装置
US6611213B1 (en) 1999-03-22 2003-08-26 Lucent Technologies Inc. Method and apparatus for data compression using fingerprinting
US6717616B1 (en) * 1999-08-16 2004-04-06 Intel Corporation Amplifier assisted active pixel read out structure
US7012645B1 (en) * 1999-08-26 2006-03-14 Micron Technology, Inc. Image sensor with p-type circuitry and n-type photosensor
US7133074B1 (en) * 1999-09-28 2006-11-07 Zoran Corporation Image sensor circuits including sampling circuits used therein for performing correlated double sampling
US7092021B2 (en) 2000-02-22 2006-08-15 Micron Technology, Inc. Frame shuttering scheme for increased frame rate
US6404854B1 (en) 2000-06-26 2002-06-11 Afp Imaging Corporation Dental x-ray imaging system
US6320934B1 (en) * 2000-06-26 2001-11-20 Afp Imaging Corporation Sensor characterization in memory
US6307915B1 (en) 2000-06-26 2001-10-23 Afp Imaging Corporation Triggering of solid state X-ray imagers with non-destructive readout capability
US7079178B2 (en) * 2001-02-20 2006-07-18 Jaroslav Hynecek High dynamic range active pixel CMOS image sensor and data processing system incorporating adaptive pixel reset
US6965407B2 (en) * 2001-03-26 2005-11-15 Silicon Video, Inc. Image sensor ADC and CDS per column
WO2002080376A2 (en) * 2001-03-29 2002-10-10 Given Imaging Ltd. A method for timing control
US6911639B2 (en) * 2001-05-07 2005-06-28 Silicon Video, Inc. CMOS system for capturing an image and a method thereof
US7045758B2 (en) * 2001-05-07 2006-05-16 Panavision Imaging Llc Scanning image employing multiple chips with staggered pixels
US7554067B2 (en) 2001-05-07 2009-06-30 Panavision Imaging Llc Scanning imager employing multiple chips with staggered pixels
US6818877B2 (en) * 2001-05-17 2004-11-16 Silicon Video, Inc. Pre-charging a wide analog bus for CMOS image sensors
JP2003060990A (ja) * 2001-08-10 2003-02-28 Victor Co Of Japan Ltd 固体撮像装置及びその読み出し方法
US20030035178A1 (en) * 2001-08-17 2003-02-20 George Seaver Solid-state system for tracking and regulating optical beams
US6794627B2 (en) * 2001-10-24 2004-09-21 Foveon, Inc. Aggregation of active pixel sensor signals
US20030202111A1 (en) * 2002-04-30 2003-10-30 Jaejin Park Apparatus and methods for dark level compensation in image sensors using dark pixel sensor metrics
DE10227622A1 (de) * 2002-06-20 2004-01-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorschaltung
US8449452B2 (en) * 2002-09-30 2013-05-28 Given Imaging Ltd. In-vivo sensing system
AU2003288517A1 (en) * 2002-12-26 2004-07-22 Given Imaging Ltd. In vivo imaging device and method of manufacture thereof
US6780666B1 (en) * 2003-08-07 2004-08-24 Micron Technology, Inc. Imager photo diode capacitor structure with reduced process variation sensitivity
US7408195B2 (en) * 2003-09-04 2008-08-05 Cypress Semiconductor Corporation (Belgium) Bvba Semiconductor pixel arrays with reduced sensitivity to defects
FR2866180B1 (fr) * 2004-02-06 2006-06-23 St Microelectronics Sa Procede de traitement des informations delivrees par une matrice de pixels actifs d'un capteur offrant une dynamique et un gain etendus, et capteur correspondant.
JP2005328275A (ja) * 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
JP2005328274A (ja) * 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
EP1789843A2 (de) * 2004-08-25 2007-05-30 Panavision Imaging, Inc Verfahren und vorrichtung zur steuerung einer linse und kameramodul damit
EP1883902B1 (de) * 2005-05-10 2011-08-03 Active Optics Pty. Ltd. Verfahren zur steuerung eines bilderfassungssystems, bilderfassungssystem und digitalkamera
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
WO2007063550A2 (en) * 2005-12-02 2007-06-07 Given Imaging Ltd. System and device for in vivo procedures
KR100738551B1 (ko) * 2006-01-17 2007-07-11 삼성전자주식회사 화상형성기기의 히터롤러
US7544921B2 (en) * 2006-01-19 2009-06-09 Micron Technology, Inc. Linear distributed pixel differential amplifier having mirrored inputs
US7602429B2 (en) * 2006-02-01 2009-10-13 Chi Wah Kok Paired differential active pixel sensor
US9101279B2 (en) 2006-02-15 2015-08-11 Virtual Video Reality By Ritchey, Llc Mobile user borne brain activity data and surrounding environment data correlation system
US7847846B1 (en) 2006-05-16 2010-12-07 University Of Rochester CMOS image sensor readout employing in-pixel transistor current sensing
JP4215167B2 (ja) * 2007-01-16 2009-01-28 シャープ株式会社 増幅型固体撮像装置および電子情報機器
US8035711B2 (en) * 2008-05-22 2011-10-11 Panavision Imaging, Llc Sub-pixel array optical sensor
US20100149393A1 (en) * 2008-05-22 2010-06-17 Panavision Imaging, Llc Increasing the resolution of color sub-pixel arrays
US8080775B2 (en) * 2008-06-30 2011-12-20 Raytheon Company Differential source follower source leader addressable node readout circuit
CN101841633B (zh) * 2009-03-19 2013-09-04 英属开曼群岛商恒景科技股份有限公司 图像传感器的读出电路
WO2010119702A1 (ja) * 2009-04-16 2010-10-21 パナソニック株式会社 固体撮像素子および駆動方法
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
CN102104744B (zh) * 2011-03-04 2013-01-16 北京思比科微电子技术股份有限公司 Cmos图像传感器像素读出电路结构及像素结构
WO2013040458A1 (en) 2011-09-14 2013-03-21 Panavision Imaging Image sensor adaptive column readout structure
US8992042B2 (en) 2011-11-14 2015-03-31 Halma Holdings, Inc. Illumination devices using natural light LEDs
CN102447848B (zh) * 2012-01-17 2013-09-04 中国科学院半导体研究所 Cmos图像传感器全局曝光像素单元
US20130208154A1 (en) * 2012-02-14 2013-08-15 Weng Lyang Wang High-sensitivity CMOS image sensors
JP6021360B2 (ja) 2012-03-07 2016-11-09 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
US9851455B2 (en) 2014-09-22 2017-12-26 General Electric Company Solid state photomultiplier with improved pulse shape readout
WO2016048470A1 (en) * 2014-09-22 2016-03-31 General Electric Company Solid state photomultiplier with improved pulse shape readout
EP3220627A4 (de) * 2014-11-10 2018-04-25 Nikon Corporation Lichterkennungsvorrichtung, bilderfassungsvorrichtung und bilderfassungselement
WO2019082894A1 (ja) * 2017-10-23 2019-05-02 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス及び電位測定装置
KR20210028139A (ko) 2018-03-14 2021-03-11 소니 어드밴스드 비주얼 센싱 아게 3d-ic 기술로 제조된 이벤트-기반 비전 센서

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528643A (en) * 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
JP2965777B2 (ja) * 1992-01-29 1999-10-18 オリンパス光学工業株式会社 固体撮像装置
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5493423A (en) * 1994-10-28 1996-02-20 Xerox Corporation Resettable pixel amplifier for an image sensor array
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
FR2732848B1 (fr) * 1995-04-04 1997-05-16 Thomson Csf Semiconducteurs Amplificateur de lecture de registre ccd

Also Published As

Publication number Publication date
EP1062802B1 (de) 2003-10-08
KR20010034571A (ko) 2001-04-25
JP4388696B2 (ja) 2009-12-24
WO1999048282A1 (en) 1999-09-23
KR100549385B1 (ko) 2006-02-08
CN1200555C (zh) 2005-05-04
DE69911932D1 (de) 2003-11-13
CN1293863A (zh) 2001-05-02
DE69911932T2 (de) 2004-08-12
US6084229A (en) 2000-07-04
CA2323486A1 (en) 1999-09-23
IL137832A (en) 2005-08-31
IL137832A0 (en) 2001-10-31
US20020134911A1 (en) 2002-09-26
AU2999899A (en) 1999-10-11
JP2002507864A (ja) 2002-03-12
EP1062802A1 (de) 2000-12-27

Similar Documents

Publication Publication Date Title
ATE251829T1 (de) Aktiver linearer sensor
TW428324B (en) Low-noise active-pixel sensor for imaging arrays with high speed row reset
WO2002037830A3 (en) Dynamic range extension for cmos image sensors
US5739562A (en) Combined photogate and photodiode active pixel image sensor
ATE227487T1 (de) Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung
KR101045117B1 (ko) 고체 촬상 장치
US8119972B2 (en) Solid-state image sensing device having a low-pass filter for limiting signal frequencies passing to the output node of an inverting amplifier
IT1247657B (it) Amplificatore operazionale cmos di potenza con uscita differenziale.
TW200627941A (en) Solid state imaging device
US20090244341A1 (en) Active pixel sensor (aps) readout structure with amplification
TW200717784A (en) Image sensor devices and CMOS image sensor devices and arrays using the same
JPS5738073A (en) Solid-state image sensor
IT8683636A0 (it) Amplificatore operazionale di potenza cmos ad uscita interamente differenziale.
DE69934566D1 (de) Aktive Kompensation eines kapazitiven Multiplizierers
GB2351867A (en) Solid state imaging device having paired column signal lines and voltage follower structure.
KR880010336A (ko) 반도체 방사선 위치 검출장치
JP2003046873A5 (ja) 半導体装置および電子機器
US5436442A (en) High temperature photodetector array
KR100635972B1 (ko) 어레이 판독 시스템
KR100691190B1 (ko) 이미지 센서 어레이
JP3069373B2 (ja) 固体撮像装置の駆動方法
EP1668774A2 (de) Rauscharmer cmos-verstärker für bildsensoren
JP4264621B2 (ja) 電流−電圧変換回路および固体撮像素子
JP2000307959A (ja) 固体撮像装置
IT8920610A0 (it) Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties