ATE230162T1 - Verfahren zur herstellung eines jfet bauelements - Google Patents
Verfahren zur herstellung eines jfet bauelementsInfo
- Publication number
- ATE230162T1 ATE230162T1 AT97830490T AT97830490T ATE230162T1 AT E230162 T1 ATE230162 T1 AT E230162T1 AT 97830490 T AT97830490 T AT 97830490T AT 97830490 T AT97830490 T AT 97830490T AT E230162 T1 ATE230162 T1 AT E230162T1
- Authority
- AT
- Austria
- Prior art keywords
- diffusion
- jfet
- producing
- channel
- zone
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Joining Of Glass To Other Materials (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97830490A EP0907208B1 (de) | 1997-10-02 | 1997-10-02 | Verfahren zur Herstellung eines JFET Bauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE230162T1 true ATE230162T1 (de) | 2003-01-15 |
Family
ID=8230795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97830490T ATE230162T1 (de) | 1997-10-02 | 1997-10-02 | Verfahren zur herstellung eines jfet bauelements |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0907208B1 (de) |
AT (1) | ATE230162T1 (de) |
DE (1) | DE69717992T2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004018153B9 (de) * | 2004-04-08 | 2012-08-23 | Austriamicrosystems Ag | Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4118728A (en) * | 1976-09-03 | 1978-10-03 | Fairchild Camera And Instrument Corporation | Integrated circuit structures utilizing conductive buried regions |
DE2753704C2 (de) * | 1977-12-02 | 1986-11-06 | Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger | Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren |
JPH05304258A (ja) * | 1992-04-28 | 1993-11-16 | Toshiba Corp | 半導体装置およびその製造方法 |
US5296409A (en) * | 1992-05-08 | 1994-03-22 | National Semiconductor Corporation | Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process |
JPH08507177A (ja) * | 1993-02-25 | 1996-07-30 | ナショナル・セミコンダクター・コーポレイション | Jfetを備えたcmosデバイスの製造プロセス |
DE69415500T2 (de) * | 1994-03-31 | 1999-05-20 | St Microelectronics Srl | Verfahren zur Herstellung eines Halbleiterbauteils mit vergrabenem Übergang |
-
1997
- 1997-10-02 EP EP97830490A patent/EP0907208B1/de not_active Expired - Lifetime
- 1997-10-02 DE DE69717992T patent/DE69717992T2/de not_active Expired - Fee Related
- 1997-10-02 AT AT97830490T patent/ATE230162T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69717992T2 (de) | 2003-07-24 |
DE69717992D1 (de) | 2003-01-30 |
EP0907208A1 (de) | 1999-04-07 |
EP0907208B1 (de) | 2002-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |