ATE227879T1 - Pumpensteuerschaltung - Google Patents

Pumpensteuerschaltung

Info

Publication number
ATE227879T1
ATE227879T1 AT98911654T AT98911654T ATE227879T1 AT E227879 T1 ATE227879 T1 AT E227879T1 AT 98911654 T AT98911654 T AT 98911654T AT 98911654 T AT98911654 T AT 98911654T AT E227879 T1 ATE227879 T1 AT E227879T1
Authority
AT
Austria
Prior art keywords
wordline
pass transistor
voltage
boost
boosting
Prior art date
Application number
AT98911654T
Other languages
English (en)
Inventor
Ray Pinkham
Paul Lazar
Cheow F Yeo
Original Assignee
Hyundai Electronics America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/818,802 external-priority patent/US6160749A/en
Application filed by Hyundai Electronics America filed Critical Hyundai Electronics America
Application granted granted Critical
Publication of ATE227879T1 publication Critical patent/ATE227879T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Cookers (AREA)
  • Read Only Memory (AREA)
AT98911654T 1997-03-14 1998-03-13 Pumpensteuerschaltung ATE227879T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/818,802 US6160749A (en) 1997-03-14 1997-03-14 Pump control circuit
US08/847,885 US5914908A (en) 1997-03-14 1997-04-28 Method of operating a boosted wordline
PCT/US1998/005046 WO1998040892A1 (en) 1997-03-14 1998-03-13 Pump control circuit

Publications (1)

Publication Number Publication Date
ATE227879T1 true ATE227879T1 (de) 2002-11-15

Family

ID=27124305

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98911654T ATE227879T1 (de) 1997-03-14 1998-03-13 Pumpensteuerschaltung

Country Status (6)

Country Link
US (1) US5914908A (de)
EP (1) EP0966742B1 (de)
JP (1) JP4576004B2 (de)
AT (1) ATE227879T1 (de)
DE (1) DE69809399T2 (de)
WO (1) WO1998040892A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6731151B1 (en) * 1999-09-30 2004-05-04 Interuniversitar Micro-Elektronica Centrum (Imec Vzw) Method and apparatus for level shifting
US6240026B1 (en) * 2000-03-07 2001-05-29 Stmicroelectronics, Inc. Bit line sense circuit and method for dynamic random access memories
KR100506059B1 (ko) * 2002-12-09 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
JP5326185B2 (ja) 2005-09-28 2013-10-30 日産自動車株式会社 ガス拡散電極用材料及びその製造方法
US9245602B2 (en) * 2013-12-10 2016-01-26 Broadcom Corporation Techniques to boost word-line voltage using parasitic capacitances
US10217507B2 (en) * 2016-11-08 2019-02-26 Globalfoundries Inc. Bending circuit for static random access memory (SRAM) self-timer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533843A (en) * 1978-09-07 1985-08-06 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4748349A (en) * 1978-09-22 1988-05-31 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4543500A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier voltage boost for row address lines
JPS6079594A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体記憶装置
US4649523A (en) * 1985-02-08 1987-03-10 At&T Bell Laboratories Semiconductor memory with boosted word line
JP2911918B2 (ja) * 1989-08-30 1999-06-28 富士通株式会社 半導体記憶装置
JPH0812754B2 (ja) * 1990-08-20 1996-02-07 富士通株式会社 昇圧回路
JPH04129089A (ja) * 1990-09-19 1992-04-30 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
US5313429A (en) * 1992-02-14 1994-05-17 Catalyst Semiconductor, Inc. Memory circuit with pumped voltage for erase and program operations
JPH05258565A (ja) * 1992-03-12 1993-10-08 Mitsubishi Electric Corp 半導体記憶装置
JP3179848B2 (ja) * 1992-03-27 2001-06-25 三菱電機株式会社 半導体記憶装置
JP3128425B2 (ja) * 1994-04-08 2001-01-29 株式会社東芝 半導体記憶装置
US5582171A (en) * 1994-07-08 1996-12-10 Insight Medical Systems, Inc. Apparatus for doppler interferometric imaging and imaging guidewire
JP3561012B2 (ja) * 1994-11-07 2004-09-02 株式会社ルネサステクノロジ 半導体集積回路装置
KR0172333B1 (ko) * 1995-01-16 1999-03-30 김광호 반도체 메모리 장치의 전원 승압 회로

Also Published As

Publication number Publication date
EP0966742A4 (de) 2001-03-14
DE69809399D1 (de) 2002-12-19
EP0966742B1 (de) 2002-11-13
EP0966742A2 (de) 1999-12-29
JP4576004B2 (ja) 2010-11-04
US5914908A (en) 1999-06-22
DE69809399T2 (de) 2003-08-21
WO1998040892A1 (en) 1998-09-17
JP2001514783A (ja) 2001-09-11

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Legal Events

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