ATE224584T1 - Verfahren und vorrichtung zur reinigung eines plasmareaktors - Google Patents

Verfahren und vorrichtung zur reinigung eines plasmareaktors

Info

Publication number
ATE224584T1
ATE224584T1 AT96308747T AT96308747T ATE224584T1 AT E224584 T1 ATE224584 T1 AT E224584T1 AT 96308747 T AT96308747 T AT 96308747T AT 96308747 T AT96308747 T AT 96308747T AT E224584 T1 ATE224584 T1 AT E224584T1
Authority
AT
Austria
Prior art keywords
plasma
wafer
coupling
chamber
during processing
Prior art date
Application number
AT96308747T
Other languages
English (en)
Inventor
Yan Ye
Hiroji Hanawa
Diana Xiaobing Ma
Gerald Zheyao Yin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE224584T1 publication Critical patent/ATE224584T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
AT96308747T 1995-12-04 1996-12-03 Verfahren und vorrichtung zur reinigung eines plasmareaktors ATE224584T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/567,376 US5817534A (en) 1995-12-04 1995-12-04 RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers

Publications (1)

Publication Number Publication Date
ATE224584T1 true ATE224584T1 (de) 2002-10-15

Family

ID=24266907

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96308747T ATE224584T1 (de) 1995-12-04 1996-12-03 Verfahren und vorrichtung zur reinigung eines plasmareaktors

Country Status (7)

Country Link
US (1) US5817534A (de)
EP (1) EP0778607B1 (de)
JP (1) JPH09181057A (de)
KR (1) KR100430644B1 (de)
AT (1) ATE224584T1 (de)
DE (1) DE69623731T2 (de)
TW (1) TW301840B (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737720B2 (ja) * 1995-10-12 1998-04-08 日本電気株式会社 薄膜形成方法及び装置
US6749717B1 (en) 1997-02-04 2004-06-15 Micron Technology, Inc. Device for in-situ cleaning of an inductively-coupled plasma chambers
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
EP0883162A3 (de) * 1997-06-05 2001-04-18 Sizary Limited Reinigungsvorrichtung für Halbleiterscheibe
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6797188B1 (en) 1997-11-12 2004-09-28 Meihua Shen Self-cleaning process for etching silicon-containing material
US6872322B1 (en) * 1997-11-12 2005-03-29 Applied Materials, Inc. Multiple stage process for cleaning process chambers
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6067999A (en) * 1998-04-23 2000-05-30 International Business Machines Corporation Method for deposition tool cleaning
US6010967A (en) * 1998-05-22 2000-01-04 Micron Technology, Inc. Plasma etching methods
US6461970B1 (en) 1998-06-10 2002-10-08 Micron Technology, Inc. Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby
US6349670B1 (en) * 1998-11-30 2002-02-26 Alps Electric Co., Ltd. Plasma treatment equipment
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
US6461444B1 (en) * 1999-08-20 2002-10-08 Kaneka Corporation Method and apparatus for manufacturing semiconductor device
KR100415435B1 (ko) 1999-09-21 2004-01-31 주성엔지니어링(주) 반도체 소자 제조장치
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
KR20010056655A (ko) * 1999-12-16 2001-07-04 황 철 주 반도체 소자 제조 장치
US6518190B1 (en) 1999-12-23 2003-02-11 Applied Materials Inc. Plasma reactor with dry clean apparatus and method
TW518686B (en) * 1999-12-29 2003-01-21 Tokyo Electron Ltd System for automatic control of the wall bombardment to control wall deposition
KR100502268B1 (ko) * 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US6564810B1 (en) * 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6531030B1 (en) * 2000-03-31 2003-03-11 Lam Research Corp. Inductively coupled plasma etching apparatus
TW478026B (en) * 2000-08-25 2002-03-01 Hitachi Ltd Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
JP4109861B2 (ja) * 2000-12-12 2008-07-02 キヤノン株式会社 真空処理方法
KR20020061814A (ko) * 2001-01-18 2002-07-25 엘지전자주식회사 플라즈마 중합장치 전극구조
KR20030056522A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 반도체 공정 쳄버의 제어 장치
US6828241B2 (en) * 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20040040662A1 (en) * 2002-08-28 2004-03-04 Manabu Edamura Plasma processing method and apparatus for etching nonvolatile material
US6716765B1 (en) * 2002-11-12 2004-04-06 Novellus Systems, Inc. Plasma clean for a semiconductor thin film deposition chamber
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
US20060216949A1 (en) * 2003-04-22 2006-09-28 Kazuhide Hasebe Method for cleaning heat treatment apparatus
KR20040107983A (ko) * 2003-06-16 2004-12-23 삼성전자주식회사 반도체 제조 장치
US20050106873A1 (en) * 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US7510665B2 (en) * 2003-08-15 2009-03-31 Applied Materials, Inc. Plasma generation and control using dual frequency RF signals
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US20060027329A1 (en) * 2004-08-09 2006-02-09 Sinha Ashok K Multi-frequency plasma enhanced process chamber having a torroidal plasma source
JP4758159B2 (ja) * 2005-07-19 2011-08-24 株式会社日立ハイテクノロジーズ プラズマエッチング装置および微粒子除去方法
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
KR100733080B1 (ko) 2006-01-03 2007-06-29 삼성전자주식회사 식각장치
US8911590B2 (en) * 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
US20070246161A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US7780864B2 (en) * 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US7264688B1 (en) 2006-04-24 2007-09-04 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and toroidal plasma sources
US7550090B2 (en) * 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7736914B2 (en) * 2007-11-29 2010-06-15 Applied Materials, Inc. Plasma control using dual cathode frequency mixing and controlling the level of polymer formation
US8118946B2 (en) 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
KR100919487B1 (ko) * 2009-01-22 2009-09-28 주식회사 맥시스 플라즈마 처리 장치
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5198616B2 (ja) * 2011-03-28 2013-05-15 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9209032B2 (en) * 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN107154332B (zh) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及方法
US11835465B2 (en) 2019-02-15 2023-12-05 Hitachi High-Tech Corporation Detecting method and detecting device of gas components and processing apparatus using detecting device of gas components
US20220349050A1 (en) * 2021-04-30 2022-11-03 Applied Materials, Inc. Method and apparatus with high conductance components for chamber cleaning

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07100348B2 (ja) * 1987-07-13 1995-11-01 三菱化学株式会社 フィルムの製造方法
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
JPH0562936A (ja) * 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5425842A (en) * 1992-06-09 1995-06-20 U.S. Philips Corporation Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP2674488B2 (ja) * 1993-12-01 1997-11-12 日本電気株式会社 ドライエッチング室のクリーニング方法
DE69531880T2 (de) * 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
US5523261A (en) * 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling

Also Published As

Publication number Publication date
US5817534A (en) 1998-10-06
DE69623731T2 (de) 2003-06-05
TW301840B (en) 1997-04-01
EP0778607A1 (de) 1997-06-11
KR970052753A (ko) 1997-07-29
KR100430644B1 (ko) 2004-09-16
DE69623731D1 (de) 2002-10-24
EP0778607B1 (de) 2002-09-18
JPH09181057A (ja) 1997-07-11

Similar Documents

Publication Publication Date Title
ATE224584T1 (de) Verfahren und vorrichtung zur reinigung eines plasmareaktors
US5762748A (en) Lid and door for a vacuum chamber and pretreatment therefor
EP1126514A3 (de) Ätzverfahren
TW428045B (en) Plasma cleaning and etching methods using non-global-warming compounds
TW328138B (en) Chamber etching method of plasma processing apparatus and plasma apparatus using such method
DE69631349D1 (de) Reinigungsverfahren und Vorrichtung für Vakuumröhre in einem CVD-System
WO2003060963A3 (en) Electrochemical edge and bevel cleaning process and system
WO2003010799A3 (en) Plasma ashing process
KR960002537A (ko) 플라즈마 반응로에서 정전기 척 세척방법
ATE506690T1 (de) Plasmaätzreaktor und verfahren zu seinem betrieb
EP0392134A3 (de) Verfahren zur Behandlung der Rückseite einer Halbleiterscheibe
EP0838838A3 (de) Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung
WO2003009363A1 (en) Plasma processor and plasma processing method
TW369673B (en) Cleaning process for hydrophobic silicon wafers
EP1324374A3 (de) Ätzvorrichtung für einen Isolationsfilm
TW355815B (en) Cleaning methods of porous surface and semiconductor surface
EP0790642A3 (de) Einrichtung und Verfahren zur Entfernung von Kontamination-Partikeln von der Oberfläche einer Anlage zur Behandlung von Halbleitern
JPS57201016A (en) Cleaning method for semiconductor manufacturing apparatus
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
ES2151633T3 (es) Procedimiento y dispositivo para el decapado de un substrato metalico.
ATE249098T1 (de) Bearbeitungskammer zur plasma behandlung und diese bearbeitungskammer benutzende vorrichtung
DE3778794D1 (de) Verfahren und vorrichtung zum ausbilden einer schicht durch plasmachemischen prozess.
JPH11121435A (ja) 基板処理装置及び基板処理方法
JPS57200569A (en) Apparatus for treating surface with gas decomposed by light
DE69723699D1 (de) Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties