ATE220807T1 - Integrierter halbleiterspeicher mit redundanzspeicherzellen - Google Patents
Integrierter halbleiterspeicher mit redundanzspeicherzellenInfo
- Publication number
- ATE220807T1 ATE220807T1 AT95112548T AT95112548T ATE220807T1 AT E220807 T1 ATE220807 T1 AT E220807T1 AT 95112548 T AT95112548 T AT 95112548T AT 95112548 T AT95112548 T AT 95112548T AT E220807 T1 ATE220807 T1 AT E220807T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cells
- word
- integrated semiconductor
- semiconductor memory
- redundance
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95112548A EP0766175B1 (de) | 1995-08-09 | 1995-08-09 | Integrierter Halbleiterspeicher mit Redundanzspeicherzellen |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE220807T1 true ATE220807T1 (de) | 2002-08-15 |
Family
ID=8219508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT95112548T ATE220807T1 (de) | 1995-08-09 | 1995-08-09 | Integrierter halbleiterspeicher mit redundanzspeicherzellen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5666316A (ja) |
EP (1) | EP0766175B1 (ja) |
JP (1) | JP3645366B2 (ja) |
KR (1) | KR100424535B1 (ja) |
AT (1) | ATE220807T1 (ja) |
DE (1) | DE59510285D1 (ja) |
TW (1) | TW302482B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100348863B1 (ko) * | 1999-12-30 | 2002-08-17 | 주식회사 하이닉스반도체 | 리던던시 평가회로를 구비한 메모리소자 및 리던던시평가방법 |
JP4111486B2 (ja) * | 2002-01-31 | 2008-07-02 | シャープ株式会社 | 半導体記憶装置および電子情報機器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH073754B2 (ja) * | 1988-03-08 | 1995-01-18 | 三菱電機株式会社 | 半導体記憶装置 |
JPH05166396A (ja) * | 1991-12-12 | 1993-07-02 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5471426A (en) * | 1992-01-31 | 1995-11-28 | Sgs-Thomson Microelectronics, Inc. | Redundancy decoder |
JP3040625B2 (ja) * | 1992-02-07 | 2000-05-15 | 松下電器産業株式会社 | 半導体記憶装置 |
JP3129440B2 (ja) * | 1992-04-16 | 2001-01-29 | シーメンス アクチエンゲゼルシヤフト | 冗長装置を有する集積半導体メモリ |
JP3224317B2 (ja) * | 1993-10-08 | 2001-10-29 | 富士通株式会社 | 冗長アドレスデコーダ |
-
1995
- 1995-08-09 EP EP95112548A patent/EP0766175B1/de not_active Expired - Lifetime
- 1995-08-09 DE DE59510285T patent/DE59510285D1/de not_active Expired - Lifetime
- 1995-08-09 AT AT95112548T patent/ATE220807T1/de not_active IP Right Cessation
-
1996
- 1996-07-18 TW TW085108731A patent/TW302482B/zh active
- 1996-08-01 JP JP21930896A patent/JP3645366B2/ja not_active Expired - Fee Related
- 1996-08-09 KR KR1019960033126A patent/KR100424535B1/ko not_active IP Right Cessation
- 1996-08-09 US US08/694,534 patent/US5666316A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0955097A (ja) | 1997-02-25 |
DE59510285D1 (de) | 2002-08-22 |
EP0766175A1 (de) | 1997-04-02 |
TW302482B (ja) | 1997-04-11 |
JP3645366B2 (ja) | 2005-05-11 |
EP0766175B1 (de) | 2002-07-17 |
US5666316A (en) | 1997-09-09 |
KR100424535B1 (ko) | 2004-08-12 |
KR970012707A (ko) | 1997-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |