ATE218015T1 - Oberflächenemittierender laser mit vertikalem resonator und einzelnen auf einem gemeinsamen substrat angeordneten laserelementen - Google Patents

Oberflächenemittierender laser mit vertikalem resonator und einzelnen auf einem gemeinsamen substrat angeordneten laserelementen

Info

Publication number
ATE218015T1
ATE218015T1 AT99123311T AT99123311T ATE218015T1 AT E218015 T1 ATE218015 T1 AT E218015T1 AT 99123311 T AT99123311 T AT 99123311T AT 99123311 T AT99123311 T AT 99123311T AT E218015 T1 ATE218015 T1 AT E218015T1
Authority
AT
Austria
Prior art keywords
layer
contact layer
reflectivity
laser device
semiconductor laser
Prior art date
Application number
AT99123311T
Other languages
English (en)
Inventor
Elyahou Kapon
Di Sopra Fabrice Monti
Marcel Brunner
Original Assignee
Avalon Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avalon Photonics Ltd filed Critical Avalon Photonics Ltd
Application granted granted Critical
Publication of ATE218015T1 publication Critical patent/ATE218015T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT99123311T 1999-02-11 1999-11-22 Oberflächenemittierender laser mit vertikalem resonator und einzelnen auf einem gemeinsamen substrat angeordneten laserelementen ATE218015T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99101756A EP1035621B1 (de) 1999-02-11 1999-02-11 Halbleiterlaser und Herstellungsverfahren

Publications (1)

Publication Number Publication Date
ATE218015T1 true ATE218015T1 (de) 2002-06-15

Family

ID=8237450

Family Applications (2)

Application Number Title Priority Date Filing Date
AT99101756T ATE200944T1 (de) 1999-02-11 1999-02-11 Halbleiterlaser und herstellungsverfahren
AT99123311T ATE218015T1 (de) 1999-02-11 1999-11-22 Oberflächenemittierender laser mit vertikalem resonator und einzelnen auf einem gemeinsamen substrat angeordneten laserelementen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT99101756T ATE200944T1 (de) 1999-02-11 1999-02-11 Halbleiterlaser und herstellungsverfahren

Country Status (7)

Country Link
US (1) US6365427B1 (de)
EP (1) EP1035621B1 (de)
AT (2) ATE200944T1 (de)
DE (2) DE69900096T2 (de)
DK (1) DK1028505T3 (de)
ES (1) ES2178336T3 (de)
PT (1) PT1028505E (de)

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US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
US6507595B1 (en) * 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
CN1252837C (zh) * 2000-04-26 2006-04-19 奥斯兰姆奥普托半导体股份有限两合公司 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
US6694275B1 (en) * 2000-06-02 2004-02-17 Timbre Technologies, Inc. Profiler business model
US6631154B2 (en) * 2000-08-22 2003-10-07 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
DE10048443B4 (de) * 2000-09-29 2007-09-06 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiter-Laser (VCSEL) mit erhöhter Strahlungsausbeute
JP4621393B2 (ja) * 2001-03-27 2011-01-26 富士ゼロックス株式会社 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法
EP1276188A3 (de) * 2001-04-05 2003-03-19 Avalon Photonics AG Oberflächenemittierender Laser mit verticalem Resonator und verbesserter transversaler Modem stabilität und stabiel polarisierter einmodiger Ausgangsstrahl
JP4443094B2 (ja) * 2001-05-24 2010-03-31 シャープ株式会社 半導体発光素子
US6975661B2 (en) 2001-06-14 2005-12-13 Finisar Corporation Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
DE10203809B4 (de) * 2002-01-31 2010-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
JP2005191220A (ja) * 2003-12-25 2005-07-14 Sanken Electric Co Ltd 半導体発光素子およびその製造方法
JP5082344B2 (ja) * 2006-08-31 2012-11-28 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法
EP2533380B8 (de) * 2011-06-06 2017-08-30 Mellanox Technologies, Ltd. Hochgeschwindigkeitslaservorrichtung
JP2013161965A (ja) * 2012-02-06 2013-08-19 Kyoto Univ 半導体発光素子
JP6240429B2 (ja) 2013-08-07 2017-11-29 国立大学法人東京工業大学 面発光型半導体レーザおよび光伝送装置

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US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
GB2265755B (en) * 1992-03-31 1995-11-08 Matsushita Electronics Corp Semiconductor laser device and its fabrication method
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
JPH05330500A (ja) 1992-06-03 1993-12-14 Toshiba Corp 宇宙航行体の分離結合装置
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
JPH07193325A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 半導体発光装置
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US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
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Also Published As

Publication number Publication date
DE69900096T2 (de) 2001-08-09
DE69900096D1 (de) 2001-06-07
EP1035621B1 (de) 2001-05-02
ES2178336T3 (es) 2002-12-16
DK1028505T3 (da) 2002-07-29
EP1035621A1 (de) 2000-09-13
US6365427B1 (en) 2002-04-02
DE69901533D1 (de) 2002-06-27
DE69901533T2 (de) 2002-10-24
ATE200944T1 (de) 2001-05-15
PT1028505E (pt) 2002-10-31

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REN Ceased due to non-payment of the annual fee