ATE212779T1 - Plasmadepositions- und ätzungsanlage mit hoher dichte - Google Patents

Plasmadepositions- und ätzungsanlage mit hoher dichte

Info

Publication number
ATE212779T1
ATE212779T1 AT90610041T AT90610041T ATE212779T1 AT E212779 T1 ATE212779 T1 AT E212779T1 AT 90610041 T AT90610041 T AT 90610041T AT 90610041 T AT90610041 T AT 90610041T AT E212779 T1 ATE212779 T1 AT E212779T1
Authority
AT
Austria
Prior art keywords
plasma
high density
generator
substrates
magnetic field
Prior art date
Application number
AT90610041T
Other languages
English (en)
Inventor
Gregor Campbell
Robert W Conn
Tatsuo Shoji
Original Assignee
Trikon Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Inc filed Critical Trikon Technologies Inc
Application granted granted Critical
Publication of ATE212779T1 publication Critical patent/ATE212779T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
AT90610041T 1989-06-13 1990-06-12 Plasmadepositions- und ätzungsanlage mit hoher dichte ATE212779T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/365,533 US4990229A (en) 1989-06-13 1989-06-13 High density plasma deposition and etching apparatus

Publications (1)

Publication Number Publication Date
ATE212779T1 true ATE212779T1 (de) 2002-02-15

Family

ID=23439252

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90610041T ATE212779T1 (de) 1989-06-13 1990-06-12 Plasmadepositions- und ätzungsanlage mit hoher dichte

Country Status (5)

Country Link
US (1) US4990229A (de)
EP (1) EP0403418B1 (de)
JP (1) JPH0814026B2 (de)
AT (1) ATE212779T1 (de)
DE (1) DE69033908T2 (de)

Families Citing this family (271)

* Cited by examiner, † Cited by third party
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