ATE20561T1 - Schaltungsanordnung fuer groessere spannungen in niedrige spannungen verarbeitenden cmostransistoren. - Google Patents

Schaltungsanordnung fuer groessere spannungen in niedrige spannungen verarbeitenden cmostransistoren.

Info

Publication number
ATE20561T1
ATE20561T1 AT83301231T AT83301231T ATE20561T1 AT E20561 T1 ATE20561 T1 AT E20561T1 AT 83301231 T AT83301231 T AT 83301231T AT 83301231 T AT83301231 T AT 83301231T AT E20561 T1 ATE20561 T1 AT E20561T1
Authority
AT
Austria
Prior art keywords
channel transistors
stage
channel
voltages
transistors
Prior art date
Application number
AT83301231T
Other languages
English (en)
Inventor
Allen R Barlow
Corey Petersen
Original Assignee
American Micro Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23486974&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE20561(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by American Micro Syst filed Critical American Micro Syst
Application granted granted Critical
Publication of ATE20561T1 publication Critical patent/ATE20561T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Control Of Electrical Variables (AREA)
AT83301231T 1982-05-10 1983-03-08 Schaltungsanordnung fuer groessere spannungen in niedrige spannungen verarbeitenden cmostransistoren. ATE20561T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/376,903 US4490629A (en) 1982-05-10 1982-05-10 High voltage circuits in low voltage CMOS process
EP83301231A EP0094143B1 (de) 1982-05-10 1983-03-08 Schaltungsanordnung für grössere Spannungen in niedrige Spannungen verarbeitenden CMOS-Transistoren

Publications (1)

Publication Number Publication Date
ATE20561T1 true ATE20561T1 (de) 1986-07-15

Family

ID=23486974

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83301231T ATE20561T1 (de) 1982-05-10 1983-03-08 Schaltungsanordnung fuer groessere spannungen in niedrige spannungen verarbeitenden cmostransistoren.

Country Status (6)

Country Link
US (1) US4490629A (de)
EP (1) EP0094143B1 (de)
JP (1) JPH0697684B2 (de)
AT (1) ATE20561T1 (de)
CA (1) CA1191972A (de)
DE (1) DE3364242D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700089A (en) * 1984-08-23 1987-10-13 Fujitsu Limited Delay circuit for gate-array LSI
US4704547A (en) * 1984-12-10 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories IGFET gating circuit having reduced electric field degradation
JPH0738583B2 (ja) * 1985-01-26 1995-04-26 株式会社東芝 半導体集積回路
US4647956A (en) * 1985-02-12 1987-03-03 Cypress Semiconductor Corp. Back biased CMOS device with means for eliminating latchup
GB2174857B (en) * 1985-05-10 1989-06-28 Motorola Inc High breakdown voltage amplifier.
US5016077A (en) * 1985-08-26 1991-05-14 Kabushiki Kaisha Toshiba Insulated gate type semiconductor device and method of manufacturing the same
US4709162A (en) * 1986-09-18 1987-11-24 International Business Machines Corporation Off-chip driver circuits
US4736117A (en) * 1986-11-14 1988-04-05 National Semiconductor Corporation VDS clamp for limiting impact ionization in high density CMOS devices
IT1225607B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Circuito logico cmos per alta tensione
US4881512A (en) * 1988-08-31 1989-11-21 General Motors Corporation Internal combustion engine ignition system
US5025178A (en) * 1988-10-18 1991-06-18 General Dynamics Corp., Pomona Div. Fault-resistant solid-state line driver
US5170078A (en) * 1990-10-22 1992-12-08 Gould Inc. Highly stable high-voltage output buffer using CMOS technology
US5179297A (en) * 1990-10-22 1993-01-12 Gould Inc. CMOS self-adjusting bias generator for high voltage drivers
JP3556679B2 (ja) 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
DE4334513C1 (de) * 1993-10-09 1994-10-20 Itt Ind Gmbh Deutsche CMOS-Schaltung mit erhöhter Spannungsfestigkeit
US6437627B1 (en) * 1995-08-25 2002-08-20 Winbond Electronics Corporation High voltage level shifter for switching high voltage in non-volatile memory intergrated circuits
US5821800A (en) * 1997-02-11 1998-10-13 Advanced Micro Devices, Inc. High-voltage CMOS level shifter
FR2787921A1 (fr) * 1998-12-23 2000-06-30 St Microelectronics Sa Circuit cmos haute tension
US20070177323A1 (en) * 2004-05-28 2007-08-02 Koninklijke Philips Electronics, N.V. High voltage switch using low voltage cmos transistors
JP4631399B2 (ja) * 2004-11-09 2011-02-16 パナソニック株式会社 超音波診断装置
JP2006167327A (ja) * 2004-12-20 2006-06-29 Matsushita Electric Ind Co Ltd 超音波診断装置
EP2189816B1 (de) * 2008-11-24 2016-03-16 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Ladungsimpulserfassungsschaltung
US8373485B2 (en) 2011-04-20 2013-02-12 Ememory Technology Inc. Voltage level shifting apparatus
US8593184B2 (en) 2011-08-09 2013-11-26 United Microelectronics Corp. Buffer circuit with regulating function and regulating circuit thereof
US20160006348A1 (en) 2014-07-07 2016-01-07 Ememory Technology Inc. Charge pump apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818245A (en) * 1973-01-05 1974-06-18 Tokyo Shibaura Electric Co Driving circuit for an indicating device using insulated-gate field effect transistors
JPS5249613B2 (de) * 1973-08-14 1977-12-19
JPS5628412B2 (de) * 1974-05-10 1981-07-01
JPS5160440A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Kotaiatsuyo mis fet suitsuchingukairo
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
DE2740702A1 (de) * 1977-09-09 1979-03-22 Siemens Ag Feldeffekt-schalttransistor fuer hohe spannungen
US4161663A (en) * 1978-03-10 1979-07-17 Rockwell International Corporation High voltage CMOS level shifter
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
JPS5585135A (en) * 1978-12-21 1980-06-26 Sony Corp Mos-fet switching circuit
US4296335A (en) * 1979-06-29 1981-10-20 General Electric Company High voltage standoff MOS driver circuitry
DE3026040C2 (de) * 1980-07-09 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Schalter mit in Serie geschalteten MOS-FET
US4429237A (en) * 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver

Also Published As

Publication number Publication date
JPH0697684B2 (ja) 1994-11-30
US4490629A (en) 1984-12-25
JPS58202563A (ja) 1983-11-25
EP0094143A1 (de) 1983-11-16
DE3364242D1 (en) 1986-07-31
CA1191972A (en) 1985-08-13
EP0094143B1 (de) 1986-06-25

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