ATE200939T1 - Spalten-redundanz-schaltungsanordnung für einen speicher - Google Patents

Spalten-redundanz-schaltungsanordnung für einen speicher

Info

Publication number
ATE200939T1
ATE200939T1 AT93102667T AT93102667T ATE200939T1 AT E200939 T1 ATE200939 T1 AT E200939T1 AT 93102667 T AT93102667 T AT 93102667T AT 93102667 T AT93102667 T AT 93102667T AT E200939 T1 ATE200939 T1 AT E200939T1
Authority
AT
Austria
Prior art keywords
memory
circuit arrangement
column redundancy
redundancy circuit
columns
Prior art date
Application number
AT93102667T
Other languages
German (de)
English (en)
Inventor
Dominique Dr Savignac
Diether Dipl-Phys Sommer
Juergen Dipl-Ing Weidenhoefer
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE200939T1 publication Critical patent/ATE200939T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT93102667T 1993-02-19 1993-02-19 Spalten-redundanz-schaltungsanordnung für einen speicher ATE200939T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93102667A EP0612074B1 (de) 1993-02-19 1993-02-19 Spalten-Redundanz-Schaltungsanordnung für einen Speicher

Publications (1)

Publication Number Publication Date
ATE200939T1 true ATE200939T1 (de) 2001-05-15

Family

ID=8212617

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93102667T ATE200939T1 (de) 1993-02-19 1993-02-19 Spalten-redundanz-schaltungsanordnung für einen speicher

Country Status (8)

Country Link
US (1) US5457655A (zh)
EP (1) EP0612074B1 (zh)
JP (1) JP3605135B2 (zh)
KR (1) KR100286789B1 (zh)
AT (1) ATE200939T1 (zh)
DE (1) DE59310168D1 (zh)
HK (1) HK1005300A1 (zh)
TW (1) TW323368B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0158484B1 (ko) * 1995-01-28 1999-02-01 김광호 불휘발성 반도체 메모리의 행리던던씨
DE19507312C1 (de) * 1995-03-02 1996-07-25 Siemens Ag Halbleiterspeicher, dessen Speicherzellen zu einzeln adressierbaren Einheiten zusammengefaßt sind und Verfahren zum Betrieb solcher Speicher
KR0145223B1 (ko) * 1995-04-24 1998-08-17 김광호 리던던시 기능을 가지는 반도체 메모리 장치
US6184928B1 (en) 1997-04-30 2001-02-06 Eastman Kodak Company Method and apparatus for split shift register addressing
US5970000A (en) * 1998-02-02 1999-10-19 International Business Machines Corporation Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains
KR100621265B1 (ko) 1998-04-17 2006-09-13 인피니언 테크놀로지스 아게 리던던트 기억 셀을 갖는 메모리 장치 및 리던던트 기억 셀에 액세스하기 위한 방법
JP4693197B2 (ja) * 1998-04-23 2011-06-01 株式会社東芝 半導体記憶装置
KR100305648B1 (ko) * 1998-05-27 2001-11-30 박종섭 고속동작용디램
DE19922920C1 (de) 1999-05-19 2000-11-16 Siemens Ag Integrierter Speicher mit Redundanzfunktion
US6314030B1 (en) * 2000-06-14 2001-11-06 Micron Technology, Inc. Semiconductor memory having segmented row repair
JP2002050191A (ja) * 2000-08-02 2002-02-15 Fujitsu Ltd 半導体記憶装置
US6552937B2 (en) * 2001-03-28 2003-04-22 Micron Technology, Inc. Memory device having programmable column segmentation to increase flexibility in bit repair
JP4299984B2 (ja) * 2001-08-29 2009-07-22 株式会社東芝 半導体記憶装置
DE10155449A1 (de) * 2001-11-12 2003-05-28 Infineon Technologies Ag Verfahren zur Rekonfiguration eines Speichers
JP2005092963A (ja) * 2003-09-16 2005-04-07 Renesas Technology Corp 不揮発性記憶装置
DE102005015319B4 (de) * 2005-04-01 2008-04-10 Infineon Technologies Ag Elektrisches System mit fehlerhaften Speicherbereichen und Verfahren zum Testen von Speicherbereichen
US7924638B2 (en) * 2007-04-18 2011-04-12 Arm Limited Redundancy architecture for an integrated circuit memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2632089B2 (ja) * 1990-06-07 1997-07-16 三菱電機株式会社 半導体回路装置
JPH04103099A (ja) * 1990-08-23 1992-04-06 Toshiba Corp 半導体記憶装置
JPH0831279B2 (ja) * 1990-12-20 1996-03-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 冗長システム
EP0529330A3 (en) * 1991-07-31 1993-09-29 Texas Instruments Incorporated System with laser link decoder for dram redundancy scheme

Also Published As

Publication number Publication date
HK1005300A1 (en) 1998-12-31
EP0612074B1 (de) 2001-05-02
JP3605135B2 (ja) 2004-12-22
KR940020415A (ko) 1994-09-16
US5457655A (en) 1995-10-10
JPH06259991A (ja) 1994-09-16
EP0612074A1 (de) 1994-08-24
TW323368B (zh) 1997-12-21
KR100286789B1 (ko) 2001-04-16
DE59310168D1 (de) 2001-06-07

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