ATE133249T1 - Aufdampf-heizvorrichtung - Google Patents
Aufdampf-heizvorrichtungInfo
- Publication number
- ATE133249T1 ATE133249T1 AT90914089T AT90914089T ATE133249T1 AT E133249 T1 ATE133249 T1 AT E133249T1 AT 90914089 T AT90914089 T AT 90914089T AT 90914089 T AT90914089 T AT 90914089T AT E133249 T1 ATE133249 T1 AT E133249T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- heating elements
- film heating
- heating device
- steam heating
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
- F27B14/12—Covers therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B2014/002—Smelting process, e.g. sequences to melt a specific material
- F27B2014/004—Process involving a smelting step, e.g. vaporisation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
- F27D2099/0008—Resistor heating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/406,785 US5031229A (en) | 1989-09-13 | 1989-09-13 | Deposition heaters |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE133249T1 true ATE133249T1 (de) | 1996-02-15 |
Family
ID=23609448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90914089T ATE133249T1 (de) | 1989-09-13 | 1990-09-07 | Aufdampf-heizvorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US5031229A (de) |
EP (1) | EP0491811B1 (de) |
JP (1) | JP3301757B2 (de) |
AT (1) | ATE133249T1 (de) |
CA (1) | CA2066573A1 (de) |
DE (1) | DE69024964T2 (de) |
WO (1) | WO1991004348A1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343022A (en) * | 1992-09-29 | 1994-08-30 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
DE59914510D1 (de) * | 1999-03-29 | 2007-11-08 | Antec Solar Energy Ag | Vorrichtung und Verfahren zur Beschichtung von Substraten durch Aufdampfen mittels eines PVD-Verfahrens |
US6376816B2 (en) * | 2000-03-03 | 2002-04-23 | Richard P. Cooper | Thin film tubular heater |
US7194197B1 (en) | 2000-03-16 | 2007-03-20 | Global Solar Energy, Inc. | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer |
KR100889758B1 (ko) * | 2002-09-03 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 유기박막 형성장치의 가열용기 |
US20040074898A1 (en) * | 2002-10-21 | 2004-04-22 | Mariner John T. | Encapsulated graphite heater and process |
US20050022743A1 (en) * | 2003-07-31 | 2005-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation container and vapor deposition apparatus |
US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
US7339139B2 (en) * | 2003-10-03 | 2008-03-04 | Darly Custom Technology, Inc. | Multi-layered radiant thermal evaporator and method of use |
JP2005222746A (ja) * | 2004-02-04 | 2005-08-18 | Doshisha | 薄膜発熱体およびその製造方法 |
US20050229856A1 (en) * | 2004-04-20 | 2005-10-20 | Malik Roger J | Means and method for a liquid metal evaporation source with integral level sensor and external reservoir |
JP4476019B2 (ja) * | 2004-05-20 | 2010-06-09 | 東北パイオニア株式会社 | 成膜源、真空成膜装置、有機el素子の製造方法 |
US7402779B2 (en) * | 2004-07-13 | 2008-07-22 | Lucent Technologies Inc. | Effusion cell and method for use in molecular beam deposition |
KR100980729B1 (ko) * | 2006-07-03 | 2010-09-07 | 주식회사 야스 | 증착 공정용 다중 노즐 증발원 |
US7741584B2 (en) * | 2007-01-21 | 2010-06-22 | Momentive Performance Materials Inc. | Encapsulated graphite heater and process |
DE102007035166B4 (de) * | 2007-07-27 | 2010-07-29 | Createc Fischer & Co. Gmbh | Hochtemperatur-Verdampferzelle mit parallel geschalteten Heizbereichen, Verfahren zu deren Betrieb und deren Verwendung in Beschichtungsanlagen |
CN101849032B (zh) * | 2007-11-05 | 2013-05-01 | 株式会社爱发科 | 蒸镀源、有机el元件的制造装置 |
EP2291855B1 (de) | 2008-04-15 | 2018-06-27 | Global Solar Energy, Inc. | Vorrichtungen zur herstellung von dünnfilmsolarzellen |
US8512806B2 (en) * | 2008-08-12 | 2013-08-20 | Momentive Performance Materials Inc. | Large volume evaporation source |
US20100159132A1 (en) * | 2008-12-18 | 2010-06-24 | Veeco Instruments, Inc. | Linear Deposition Source |
US20100285218A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
US20100282167A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
US20110177622A1 (en) * | 2009-12-28 | 2011-07-21 | Global Solar Energy, Inc. | Apparatus and methods of mixing and depositing thin film photovoltaic compositions |
KR101172275B1 (ko) * | 2009-12-31 | 2012-08-08 | 에스엔유 프리시젼 주식회사 | 기화 장치 및 이의 제어 방법 |
DE102014000313A1 (de) * | 2014-01-10 | 2015-07-16 | Audi Ag | Vorrichtung zum Abgeben eines Duftstoffs und Kraftfahrzeug mit einer derartigen Vorrichtung |
CN104078626B (zh) * | 2014-07-22 | 2016-07-06 | 深圳市华星光电技术有限公司 | 用于oled材料蒸镀的加热装置 |
CN105088145B (zh) * | 2015-08-19 | 2017-03-29 | 京东方科技集团股份有限公司 | 用于oled蒸发源的坩埚及其制造方法 |
CN105132865B (zh) * | 2015-08-20 | 2017-12-08 | 京东方科技集团股份有限公司 | 蒸发源装置及蒸镀设备 |
CN106756804A (zh) * | 2016-12-20 | 2017-05-31 | 武汉华星光电技术有限公司 | 蒸镀坩埚及其蒸镀方法 |
WO2018175753A1 (en) * | 2017-03-22 | 2018-09-27 | University Of Delaware | Centrifugal evaporation sources |
WO2019223853A1 (en) * | 2018-05-22 | 2019-11-28 | Applied Materials, Inc. | Evaporation source, method for operating an evaporation source and deposition system |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1402585A (en) * | 1921-03-07 | 1922-01-03 | Epstein Hirsch | Vaporizer |
US1895492A (en) * | 1929-10-17 | 1933-01-31 | Hercules Powder Co Ltd | Method of and apparatus for concentrating nitric acid |
US1892492A (en) * | 1932-02-12 | 1932-12-27 | Molner Herman | Frame |
US3539768A (en) * | 1959-03-03 | 1970-11-10 | Paul Eisler | Electrical space heating system |
US3118042A (en) * | 1960-11-16 | 1964-01-14 | Perkin Elmer Corp | Electrical heating devices |
US3119918A (en) * | 1961-01-03 | 1964-01-28 | Simon Juan Casas | Electric heater |
US3177345A (en) * | 1961-06-02 | 1965-04-06 | Glaverbel | Lighting and heating device in the form of a panel |
US3367795A (en) * | 1965-07-09 | 1968-02-06 | Stutzman Guy Robert | Method for making a microelectronic circuit |
CH467429A (de) * | 1967-03-31 | 1969-01-15 | Linde Ag | Verfahren und Vorrichtung zum Beheizen eines mit einem Isoliermaterial versehenen Isolierraumes |
US3806701A (en) * | 1972-11-03 | 1974-04-23 | Rival Manufacturing Co | Electric cooking utensil having a removable vessel |
US4061800A (en) * | 1975-02-06 | 1977-12-06 | Applied Materials, Inc. | Vapor desposition method |
US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
JPS53110973A (en) * | 1977-03-10 | 1978-09-28 | Futaba Denshi Kogyo Kk | Method and apparatus for manufacturing compounds |
US4330932A (en) * | 1978-07-20 | 1982-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas |
US4396899A (en) * | 1980-04-16 | 1983-08-02 | Kabushiki Kaisha Kirk | Platinum thin film resistance element and production method therefor |
US4447276A (en) * | 1981-06-15 | 1984-05-08 | The Post Office | Molecular beam epitaxy electrolytic dopant source |
FR2528454A1 (fr) * | 1982-06-11 | 1983-12-16 | Criceram | Creuset modifie pour la methode de cristallisation par goutte pendante |
JPS58225537A (ja) * | 1982-06-25 | 1983-12-27 | Hitachi Ltd | イオン源装置 |
US4426569A (en) * | 1982-07-13 | 1984-01-17 | The Perkin-Elmer Corporation | Temperature sensor assembly |
GB2129018B (en) * | 1982-08-30 | 1986-01-29 | Ricoh Kk | Vacuum evaporation apparatus |
US4545339A (en) * | 1982-09-30 | 1985-10-08 | Allied Corporation | Glow plug having a conductive film heater |
CH651592A5 (de) * | 1982-10-26 | 1985-09-30 | Balzers Hochvakuum | Dampfquelle fuer vakuumbedampfungsanlagen. |
US4734563A (en) * | 1982-11-24 | 1988-03-29 | Hewlett-Packard Company | Inversely processed resistance heater |
JPS59156996A (ja) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | 化合物結晶膜の製造方法とその装置 |
JPS604815A (ja) * | 1983-06-23 | 1985-01-11 | Nippon Soken Inc | 流量測定装置 |
US4553022A (en) * | 1984-06-04 | 1985-11-12 | The Perkin-Elmer Corporation | Effusion cell assembly |
US4518846A (en) * | 1984-06-11 | 1985-05-21 | International Business Machines Corporation | Heater assembly for molecular beam epitaxy furnace |
GB2172015B (en) * | 1984-06-12 | 1988-06-08 | Ki Polt I | Evaporator for vacuum deposition of films |
US4726822A (en) * | 1984-10-22 | 1988-02-23 | Honeywell Inc. | Fast response thermochromatographic capillary columns |
US4748367A (en) * | 1985-05-28 | 1988-05-31 | Frequency Electronics, Inc. | Contact heater for piezoelectric effect resonator crystal |
JPS62169321A (ja) * | 1986-01-21 | 1987-07-25 | Hitachi Ltd | 真空蒸着用蒸発源 |
JPS6353259A (ja) * | 1986-08-22 | 1988-03-07 | Mitsubishi Electric Corp | 薄膜形成方法 |
US4739657A (en) * | 1987-06-22 | 1988-04-26 | Honeywell Inc. | Resistance with linear temperature coefficient |
US4782708A (en) * | 1987-08-27 | 1988-11-08 | General Motors Corporation | Thermocouple sensors |
-
1989
- 1989-09-13 US US07/406,785 patent/US5031229A/en not_active Expired - Lifetime
-
1990
- 1990-09-07 JP JP51318790A patent/JP3301757B2/ja not_active Expired - Fee Related
- 1990-09-07 AT AT90914089T patent/ATE133249T1/de not_active IP Right Cessation
- 1990-09-07 WO PCT/US1990/005074 patent/WO1991004348A1/en active IP Right Grant
- 1990-09-07 CA CA002066573A patent/CA2066573A1/en not_active Abandoned
- 1990-09-07 DE DE69024964T patent/DE69024964T2/de not_active Expired - Fee Related
- 1990-09-07 EP EP90914089A patent/EP0491811B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69024964D1 (de) | 1996-02-29 |
JPH05503317A (ja) | 1993-06-03 |
WO1991004348A1 (en) | 1991-04-04 |
JP3301757B2 (ja) | 2002-07-15 |
DE69024964T2 (de) | 1996-09-19 |
EP0491811B1 (de) | 1996-01-17 |
EP0491811A4 (de) | 1994-03-30 |
US5031229A (en) | 1991-07-09 |
EP0491811A1 (de) | 1992-07-01 |
CA2066573A1 (en) | 1991-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE133249T1 (de) | Aufdampf-heizvorrichtung | |
NO911053D0 (no) | Fremgangsmaate for overtrekk av en flate av glass. | |
CA2081306A1 (en) | Semiconductor film bolometer thermal infrared detector | |
GB2089840B (en) | Chemical vapour deposition apparatus incorporating radiant heat source for substrate | |
MY109605A (en) | Method for producing semiconductor device having alignment mark. | |
AU538579B2 (en) | Continuous deposition of a layer of semiconductor material on a heated substrate | |
DK163823C (da) | Overtraeksmateriale og fremgangsmaade til overtraekning af et substrat med overtraeksmaterialet | |
CY1111737T1 (el) | Μηχανισμος και μεθοδος εναποθεσης ημιαγωγιμου υλικοy | |
SE8002939L (sv) | Vermekrympbart material | |
BR7806939A (pt) | Processo para a deposicao de filmes transparentes de oxido estanico sobre um substrato aquecido,artigo e aparelho para deposicao de vapor quimico | |
DE69300907D1 (de) | Keramisches Mehrschichtsubstrat mit Gradienten-Kontaktlöchern. | |
DK178880A (da) | Vandig silicaholdig belaegningssammensaetning substrat og genstand belagt med samme samt fremgangsmaade til dannelse af en slidbestandig belaegning paa et substrat | |
IT8183382A0 (it) | Procedimento ed apparecchiatura per deposito chimico a vapore di films su uno strato siliconico. | |
ATE37397T1 (de) | Stueck, das ein mit einem harten und korrosionsfesten ueberzug versehenes substrat enthaelt. | |
NO770025L (no) | Polykrystallinsk siliciumnitridgjenstand og fremgangsm}te ved fremstilling derav. | |
FI880862A0 (fi) | Underlag foer uppbaerande av elkomponenter. | |
TW259890B (en) | Semiconductor device and process thereof | |
FI943498A (fi) | Menetelmä substraatin valmistamiseksi, jonka pinnalla on ikkunanmuotoisia ja kehysmuotoisia kalvoja | |
NL7802009A (nl) | Chemische dampafzetting van een laag van amorfe fosfor-stikstof-zuurstof samenstelling, etsen van een dergelijke laag, materiaal van dergelijke samenstelling en halfgeleiderinrichting voorzien van dergelijke laag. | |
ES2181140T3 (es) | Elemento calefactor y aparato electrodomestico, especialmente plancha de vapor, que comprende dicho elemento y procedimiento de obtencion de la plancha. | |
JPS6411379A (en) | Superconducting film structure | |
JPS6445193A (en) | Method for forming conductor path | |
KR900019218A (ko) | 후막소자 | |
SE8601574D0 (sv) | Planarkretsenhet | |
Kotera et al. | Method for Producing an InSb Thin Film Element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |