AT323236B - Vorrichtung zum herstellen von einkristallen aus haleleitenden verbindungen nach dem czochralski-verfahren - Google Patents

Vorrichtung zum herstellen von einkristallen aus haleleitenden verbindungen nach dem czochralski-verfahren

Info

Publication number
AT323236B
AT323236B AT243170A AT243170A AT323236B AT 323236 B AT323236 B AT 323236B AT 243170 A AT243170 A AT 243170A AT 243170 A AT243170 A AT 243170A AT 323236 B AT323236 B AT 323236B
Authority
AT
Austria
Prior art keywords
compounds according
single crystals
producing single
conductive compounds
czochralski process
Prior art date
Application number
AT243170A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691913682 external-priority patent/DE1913682C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT323236B publication Critical patent/AT323236B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C2208/00—Plastics; Synthetic resins, e.g. rubbers
    • F16C2208/80—Thermosetting resins
    • F16C2208/90—Phenolic resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT243170A 1969-03-18 1970-03-16 Vorrichtung zum herstellen von einkristallen aus haleleitenden verbindungen nach dem czochralski-verfahren AT323236B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913682 DE1913682C3 (de) 1969-03-18 Vorrichtung zum Herstellen von Einkristallen aus halbleitenden Verbindungen

Publications (1)

Publication Number Publication Date
AT323236B true AT323236B (de) 1975-06-25

Family

ID=5728503

Family Applications (1)

Application Number Title Priority Date Filing Date
AT243170A AT323236B (de) 1969-03-18 1970-03-16 Vorrichtung zum herstellen von einkristallen aus haleleitenden verbindungen nach dem czochralski-verfahren

Country Status (8)

Country Link
US (1) US3716345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) AT323236B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA933070A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH541989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2039601A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1243930A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6917398A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE363244B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
DE2259353C3 (de) * 1972-12-04 1975-07-10 Heraeus-Quarzschmelze Gmbh, 6450 Hanau Tiegel aus Quarzglas oder Quarzgut zur Verwendung beim Züchten von Einkristallen
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
JPS545798B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-02-12 1979-03-20
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
DK371977A (da) * 1977-08-22 1979-02-23 Topsil As Fremgangsmaade og apparat til raffinering af halvledermateriale
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
EP0138292B1 (en) * 1983-08-06 1987-10-14 Sumitomo Electric Industries Limited Apparatus for the growth of single crystals
EP0139157B1 (en) * 1983-08-31 1988-07-06 Research Development Corporation of Japan Apparatus for growing single crystals of dissociative compounds
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS60251191A (ja) * 1984-05-25 1985-12-11 Res Dev Corp Of Japan 高解離圧化合物単結晶成長方法
EP0186213B1 (en) * 1984-12-28 1990-05-02 Sumitomo Electric Industries Limited Method for synthesizing compound semiconductor polycrystals and apparatus therefor
JPS623096A (ja) * 1985-06-27 1987-01-09 Res Dev Corp Of Japan 高解離圧化合物半導体単結晶成長方法
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
GB8718643D0 (en) * 1987-08-06 1987-09-09 Atomic Energy Authority Uk Single crystal pulling
JPH01192789A (ja) * 1988-01-27 1989-08-02 Toshiba Corp 結晶引上げ装置及び結晶引上げ方法
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
CA2083858C (en) * 1992-01-30 1997-10-14 James William Fleming, Jr. Iridium fiber draw induction furnace
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
DE19753477A1 (de) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial
US7641733B2 (en) * 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
DE102006050901A1 (de) * 2005-11-17 2007-05-31 Solarworld Industries Deutschland Gmbh Verfahren zum Herstellen eines Halbleiterkörpers und zum Herstellen einer Halbleitervorrichtung
US8114218B2 (en) * 2008-09-02 2012-02-14 Siemens Medical Solutions Usa, Inc. Crucible for a crystal pulling apparatus
DE102011089501B4 (de) * 2011-12-21 2013-10-10 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zum Verdampfen von Material aus einer Metallschmelze
CN111278770B (zh) 2017-10-27 2023-04-21 凯文艾伦杜利股份有限公司 用于制造高纯度硅的系统及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL244873A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1958-11-17
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
BE626374A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1961-12-22

Also Published As

Publication number Publication date
CA933070A (en) 1973-09-04
FR2039601A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-01-15
US3716345A (en) 1973-02-13
SE363244B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-01-14
CH541989A (de) 1973-09-30
DE1913682B2 (de) 1975-07-03
DE1913682A1 (de) 1970-10-15
NL6917398A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-09-22
GB1243930A (en) 1971-08-25

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