AT294961B - Druckempfindliche halbleiteranordnung - Google Patents

Druckempfindliche halbleiteranordnung

Info

Publication number
AT294961B
AT294961B AT11468/69A AT1146869A AT294961B AT 294961 B AT294961 B AT 294961B AT 11468/69 A AT11468/69 A AT 11468/69A AT 1146869 A AT1146869 A AT 1146869A AT 294961 B AT294961 B AT 294961B
Authority
AT
Austria
Prior art keywords
pressure sensitive
conductor arrangement
sensitive semi
semi
conductor
Prior art date
Application number
AT11468/69A
Other languages
English (en)
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AT294961B publication Critical patent/AT294961B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
AT11468/69A 1968-12-10 1969-12-09 Druckempfindliche halbleiteranordnung AT294961B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9217368 1968-12-10
JP43668 1968-12-27

Publications (1)

Publication Number Publication Date
AT294961B true AT294961B (de) 1971-11-15

Family

ID=26333417

Family Applications (1)

Application Number Title Priority Date Filing Date
AT11468/69A AT294961B (de) 1968-12-10 1969-12-09 Druckempfindliche halbleiteranordnung

Country Status (10)

Country Link
US (1) US3634931A (de)
AT (1) AT294961B (de)
BE (1) BE742874A (de)
CH (1) CH516872A (de)
DE (1) DE1961492B2 (de)
ES (1) ES374318A1 (de)
FR (1) FR2025792B1 (de)
GB (1) GB1268406A (de)
NL (1) NL157457B (de)
SE (1) SE360772B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2013220A1 (de) * 1970-03-19 1971-11-25 Siemens Ag Verfahren zum Herstellen einer Transistor anordnung aus Silicium
JPS5520388B1 (de) * 1970-08-12 1980-06-02
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
EP0695927A3 (de) * 1994-08-01 1996-06-26 Motorola Inc Detektor-Umformer unter Verwendung eines Schottky-Übergangs mit einer erhöhten Ausgangsspannung
JP4772135B2 (ja) * 2008-06-09 2011-09-14 ルネサスエレクトロニクス株式会社 半導体素子、および、その製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL224458A (de) * 1956-05-15
US3248616A (en) * 1962-03-08 1966-04-26 Westinghouse Electric Corp Monolithic bistable flip-flop
GB985380A (en) * 1963-02-26 1965-03-10 Westinghouse Electric Corp Semiconductor devices
US3261989A (en) * 1964-01-17 1966-07-19 Int Rectifier Corp Four-layer semiconductor device strain switch
DE1277374B (de) * 1964-09-30 1968-09-12 Hitachi Ltd Mechanisch-elektrischer Wandler
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
FR1547292A (fr) * 1966-12-19 1968-11-22 Gen Electric Perfectionnements aux dispositifs à semiconducteur

Also Published As

Publication number Publication date
FR2025792A1 (de) 1970-09-11
FR2025792B1 (de) 1975-01-10
GB1268406A (en) 1972-03-29
BE742874A (de) 1970-05-14
DE1961492A1 (de) 1970-07-30
NL6918487A (de) 1970-06-12
CH516872A (de) 1971-12-15
US3634931A (en) 1972-01-18
ES374318A1 (es) 1972-03-16
NL157457B (nl) 1978-07-17
DE1961492B2 (de) 1972-04-13
SE360772B (de) 1973-10-01

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee