GB985380A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB985380A GB985380A GB759163A GB759163A GB985380A GB 985380 A GB985380 A GB 985380A GB 759163 A GB759163 A GB 759163A GB 759163 A GB759163 A GB 759163A GB 985380 A GB985380 A GB 985380A
- Authority
- GB
- United Kingdom
- Prior art keywords
- disc
- wafer
- type
- region
- surface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000002344 surface layer Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Abstract
985,380. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Feb. 26, 1963, No. 7591/63. Heading H1K. A four-region three-electrode semiconductor switching device is produced by diffusing impurity into a doped wafer of semi-conductor material to form an inner region of one conductivity type surrounded by a surface layer of opposite conductivity type, fusing a metal disc to one major surface of the wafer to form a rectifying contact and fusing a second metal disc to the other major surface to form an ohmic contact which, together with the underlying surface layer, is then divided by etching a circular groove into the wafer as far as the inner region. As shown, Fig. 4, an N-type silicon wafer is diffused with aluminium, boron or gallium to produce a P-type surface layer 22 surrounding an N-type region 23. A metal disc 21 and a gold-silicon alloy disc 24 are alloyed simultaneously to opposite major faces of the wafer to produce N-type and P+-type regions respectively. As shown, Fig. 5, a circular groove 25 is formed by masking the face of disc 24 with wax, scribing the wax and then etching until the groove extends to region 23. Alternatively the disc 24 can be constructed as a disc 24a and an annulus 24b so that when these are alloyed to the wafer the groove can be etched through region 22 only using the goldsilicon alloy regions as a mask. Ohmic contacts 26, 27 and 28 are then made to regions 21, 24a, and 24b to form the emitter, collector and gate contacts respectively. Heat sinks may be applied to both emitter disc 21 and to collector disc 24a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB759163A GB985380A (en) | 1963-02-26 | 1963-02-26 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB759163A GB985380A (en) | 1963-02-26 | 1963-02-26 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB985380A true GB985380A (en) | 1965-03-10 |
Family
ID=9836074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB759163A Expired GB985380A (en) | 1963-02-26 | 1963-02-26 | Semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB985380A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2025792A1 (en) * | 1968-12-10 | 1970-09-11 | Matsushita Electronics Corp |
-
1963
- 1963-02-26 GB GB759163A patent/GB985380A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2025792A1 (en) * | 1968-12-10 | 1970-09-11 | Matsushita Electronics Corp |
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