SE360772B - - Google Patents

Info

Publication number
SE360772B
SE360772B SE17006/69A SE1700669A SE360772B SE 360772 B SE360772 B SE 360772B SE 17006/69 A SE17006/69 A SE 17006/69A SE 1700669 A SE1700669 A SE 1700669A SE 360772 B SE360772 B SE 360772B
Authority
SE
Sweden
Application number
SE17006/69A
Inventor
G Kano
M Yokosawa
T Kawasaki
S Fujiwara
H Hasegawa
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of SE360772B publication Critical patent/SE360772B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
SE17006/69A 1968-12-10 1969-12-09 SE360772B (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9217368 1968-12-10
JP43668 1968-12-27

Publications (1)

Publication Number Publication Date
SE360772B true SE360772B (xx) 1973-10-01

Family

ID=26333417

Family Applications (1)

Application Number Title Priority Date Filing Date
SE17006/69A SE360772B (xx) 1968-12-10 1969-12-09

Country Status (10)

Country Link
US (1) US3634931A (xx)
AT (1) AT294961B (xx)
BE (1) BE742874A (xx)
CH (1) CH516872A (xx)
DE (1) DE1961492B2 (xx)
ES (1) ES374318A1 (xx)
FR (1) FR2025792B1 (xx)
GB (1) GB1268406A (xx)
NL (1) NL157457B (xx)
SE (1) SE360772B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2013220A1 (de) * 1970-03-19 1971-11-25 Siemens Ag Verfahren zum Herstellen einer Transistor anordnung aus Silicium
JPS5520388B1 (xx) * 1970-08-12 1980-06-02
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
EP0695927A3 (en) * 1994-08-01 1996-06-26 Motorola Inc Transducer-detector using a Schottky junction and having a high voltage signal at the output
JP4772135B2 (ja) * 2008-06-09 2011-09-14 ルネサスエレクトロニクス株式会社 半導体素子、および、その製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL112317C (xx) * 1956-05-15
US3248616A (en) * 1962-03-08 1966-04-26 Westinghouse Electric Corp Monolithic bistable flip-flop
GB985380A (en) * 1963-02-26 1965-03-10 Westinghouse Electric Corp Semiconductor devices
US3261989A (en) * 1964-01-17 1966-07-19 Int Rectifier Corp Four-layer semiconductor device strain switch
DE1277374B (de) * 1964-09-30 1968-09-12 Hitachi Ltd Mechanisch-elektrischer Wandler
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
FR1547292A (fr) * 1966-12-19 1968-11-22 Gen Electric Perfectionnements aux dispositifs à semiconducteur

Also Published As

Publication number Publication date
FR2025792A1 (xx) 1970-09-11
ES374318A1 (es) 1972-03-16
BE742874A (xx) 1970-05-14
GB1268406A (en) 1972-03-29
NL6918487A (xx) 1970-06-12
AT294961B (de) 1971-11-15
CH516872A (de) 1971-12-15
US3634931A (en) 1972-01-18
DE1961492A1 (de) 1970-07-30
NL157457B (nl) 1978-07-17
FR2025792B1 (xx) 1975-01-10
DE1961492B2 (de) 1972-04-13

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