DE1913113B2 - Druckempfindliches halbleiterbauelement - Google Patents

Druckempfindliches halbleiterbauelement

Info

Publication number
DE1913113B2
DE1913113B2 DE19691913113 DE1913113A DE1913113B2 DE 1913113 B2 DE1913113 B2 DE 1913113B2 DE 19691913113 DE19691913113 DE 19691913113 DE 1913113 A DE1913113 A DE 1913113A DE 1913113 B2 DE1913113 B2 DE 1913113B2
Authority
DE
Germany
Prior art keywords
pressure sensitive
conductor component
sensitive semi
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19691913113
Other languages
English (en)
Other versions
DE1913113A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1913113A1 publication Critical patent/DE1913113A1/de
Publication of DE1913113B2 publication Critical patent/DE1913113B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R21/00Variable-resistance transducers
    • H04R21/02Microphones

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DE19691913113 1968-03-15 1969-03-14 Druckempfindliches halbleiterbauelement Withdrawn DE1913113B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1739668 1968-03-15
JP1739768 1968-03-15

Publications (2)

Publication Number Publication Date
DE1913113A1 DE1913113A1 (de) 1969-09-25
DE1913113B2 true DE1913113B2 (de) 1971-04-15

Family

ID=26353901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691913113 Withdrawn DE1913113B2 (de) 1968-03-15 1969-03-14 Druckempfindliches halbleiterbauelement

Country Status (5)

Country Link
US (1) US3803462A (de)
DE (1) DE1913113B2 (de)
FR (1) FR2004030B1 (de)
GB (1) GB1256126A (de)
NL (1) NL153026B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926805A1 (de) * 1979-07-03 1981-01-22 Licentia Gmbh Halbleiter-dioden-anordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212327A (en) * 1962-10-09 1965-10-19 Gen Precision Inc Stress and strain measuring with tunnel diodes
FR1441843A (fr) * 1965-06-02 1966-06-10 Bendix Corp Perfectionnements aux transducteurs solides de pression

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926805A1 (de) * 1979-07-03 1981-01-22 Licentia Gmbh Halbleiter-dioden-anordnung

Also Published As

Publication number Publication date
DE1913113A1 (de) 1969-09-25
US3803462A (en) 1974-04-09
FR2004030B1 (de) 1974-02-01
FR2004030A1 (de) 1969-11-14
GB1256126A (en) 1971-12-08
NL6903998A (de) 1969-09-17
NL153026B (nl) 1977-04-15

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee