AR002791A1 - Dispositivo de circuito integrado con a lo menos dos elementos constructivos aislados entre si y procedimiento para su elaboracion. - Google Patents

Dispositivo de circuito integrado con a lo menos dos elementos constructivos aislados entre si y procedimiento para su elaboracion.

Info

Publication number
AR002791A1
AR002791A1 ARP960103508A AR10350896A AR002791A1 AR 002791 A1 AR002791 A1 AR 002791A1 AR P960103508 A ARP960103508 A AR P960103508A AR 10350896 A AR10350896 A AR 10350896A AR 002791 A1 AR002791 A1 AR 002791A1
Authority
AR
Argentina
Prior art keywords
integrated circuit
circuit device
elaboration
yes
procedure
Prior art date
Application number
ARP960103508A
Other languages
English (en)
Inventor
Frank Dr Lau
Wolfgang Dr Krautschneider
Manfred Dr Engelhardt
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of AR002791A1 publication Critical patent/AR002791A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un dispositivo de circuito integrado con al menos dos elementos constructivos comprende, en un substrato, una estructura aislante (4,5) entrelos elementos constructivos que cubre al menos un flanco de un surco (3) y es más ancha en elp iso del surco que en el cuello del mismo. Los elementosconstructivos están dispuestos en distintos planos, en la superficie del substrato y en el piso de los surcos. La estructura aislante causa unaaislación perpendicular entre loselementos c onstructivos.
ARP960103508A 1995-07-10 1996-07-10 Dispositivo de circuito integrado con a lo menos dos elementos constructivos aislados entre si y procedimiento para su elaboracion. AR002791A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19525072A DE19525072C2 (de) 1995-07-10 1995-07-10 Integrierte Schaltungsanordnung, bei der ein erstes Bauelement an einer Hauptfläche eines Halbleitersubstrats und ein zweites Bauelement am Grabenboden angeordnet sind, und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
AR002791A1 true AR002791A1 (es) 1998-04-29

Family

ID=7766444

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP960103508A AR002791A1 (es) 1995-07-10 1996-07-10 Dispositivo de circuito integrado con a lo menos dos elementos constructivos aislados entre si y procedimiento para su elaboracion.

Country Status (9)

Country Link
US (1) US5990536A (es)
EP (1) EP0838089B1 (es)
JP (1) JPH11509043A (es)
KR (1) KR100418849B1 (es)
CN (1) CN1093983C (es)
AR (1) AR002791A1 (es)
DE (2) DE19525072C2 (es)
IN (1) IN189112B (es)
WO (1) WO1997003463A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218720B1 (en) * 1998-10-21 2001-04-17 Advanced Micro Devices, Inc. Semiconductor topography employing a nitrogenated shallow trench isolation structure
US7071043B2 (en) 2002-08-15 2006-07-04 Micron Technology, Inc. Methods of forming a field effect transistor having source/drain material over insulative material
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134445A (ja) * 1982-02-05 1983-08-10 Seiko Epson Corp 半導体装置の製造方法
JPS58169934A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 半導体集積回路装置
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
US5176789A (en) * 1985-09-21 1993-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for depositing material on depressions
JPS6378573A (ja) * 1986-09-22 1988-04-08 Hitachi Ltd 半導体装置
US4835584A (en) * 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
DE3809218C2 (de) * 1987-03-20 1994-09-01 Mitsubishi Electric Corp Halbleitereinrichtung mit einem Graben und Verfahren zum Herstellen einer solchen Halbleitereinrichtung
JPH0620108B2 (ja) * 1987-03-23 1994-03-16 三菱電機株式会社 半導体装置の製造方法
US4977436A (en) * 1988-07-25 1990-12-11 Motorola, Inc. High density DRAM
JPH04151850A (ja) * 1990-10-15 1992-05-25 Nec Corp 溝絶縁分離型半導体集積回路の製造方法
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
EP0540262A2 (en) * 1991-10-31 1993-05-05 STMicroelectronics, Inc. Trench isolation region
JPH0637275A (ja) * 1992-07-13 1994-02-10 Toshiba Corp 半導体記憶装置及びその製造方法
US5512517A (en) * 1995-04-25 1996-04-30 International Business Machines Corporation Self-aligned gate sidewall spacer in a corrugated FET and method of making same

Also Published As

Publication number Publication date
US5990536A (en) 1999-11-23
KR100418849B1 (ko) 2004-04-21
EP0838089A1 (de) 1998-04-29
CN1093983C (zh) 2002-11-06
IN189112B (es) 2002-12-21
DE59607729D1 (de) 2001-10-25
CN1190490A (zh) 1998-08-12
DE19525072A1 (de) 1997-01-16
EP0838089B1 (de) 2001-09-19
JPH11509043A (ja) 1999-08-03
WO1997003463A1 (de) 1997-01-30
KR19990014889A (ko) 1999-02-25
DE19525072C2 (de) 2002-06-27

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AR002791A1 (es) Dispositivo de circuito integrado con a lo menos dos elementos constructivos aislados entre si y procedimiento para su elaboracion.