JP5368674B2 - 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 - Google Patents

現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 Download PDF

Info

Publication number
JP5368674B2
JP5368674B2 JP2006535432A JP2006535432A JP5368674B2 JP 5368674 B2 JP5368674 B2 JP 5368674B2 JP 2006535432 A JP2006535432 A JP 2006535432A JP 2006535432 A JP2006535432 A JP 2006535432A JP 5368674 B2 JP5368674 B2 JP 5368674B2
Authority
JP
Japan
Prior art keywords
composition
group
layer
polymer
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006535432A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007513491A (ja
Inventor
マンダル ブハーベ
カールトン エー． ウァッシュバーン
ラマ プリガッダ
エドワーズ ケビン
Original Assignee
ブルーワー サイエンス アイ エヌ シー．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ブルーワー サイエンス アイ エヌ シー． filed Critical ブルーワー サイエンス アイ エヌ シー．
Publication of JP2007513491A publication Critical patent/JP2007513491A/ja
Application granted granted Critical
Publication of JP5368674B2 publication Critical patent/JP5368674B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
JP2006535432A 2003-10-15 2004-10-15 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 Active JP5368674B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US51176203P 2003-10-15 2003-10-15
US60/511,762 2003-10-15
US10/966,909 US7364835B2 (en) 2003-10-15 2004-10-15 Developer-soluble materials and methods of using the same in via-first dual damascene applications
US10/966,909 2004-10-15
PCT/US2004/034495 WO2005038878A2 (en) 2003-10-15 2004-10-15 Developer-soluble materials and methods of using the same in via-first dual damascene applications

Publications (2)

Publication Number Publication Date
JP2007513491A JP2007513491A (ja) 2007-05-24
JP5368674B2 true JP5368674B2 (ja) 2013-12-18

Family

ID=34468002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006535432A Active JP5368674B2 (ja) 2003-10-15 2004-10-15 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法

Country Status (5)

Country Link
US (1) US7364835B2 (de)
EP (1) EP1673801B1 (de)
JP (1) JP5368674B2 (de)
KR (1) KR101189397B1 (de)
WO (1) WO2005038878A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20060216929A1 (en) * 2005-03-28 2006-09-28 Hyun-Mog Park Etch stopless dual damascene structure and method of fabrication
KR100703007B1 (ko) * 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
KR101550471B1 (ko) * 2007-07-30 2015-09-04 브레우어 사이언스 인코포레이션 포토리소그래피 공정을 위한 비공유성으로 가교 가능한 물질
US7862986B2 (en) * 2007-10-17 2011-01-04 Macronix International Co., Ltd. Patterning process
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US20090325106A1 (en) * 2008-06-27 2009-12-31 Conley Willard E Method for Implant Imaging with Spin-on Hard Masks
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8877430B2 (en) * 2010-08-05 2014-11-04 Brewer Science Inc. Methods of producing structures using a developer-soluble layer with multilayer technology
US9960038B2 (en) 2010-12-27 2018-05-01 Brewer Science, Inc. Processes to pattern small features for advanced patterning needs
WO2012124597A1 (ja) * 2011-03-15 2012-09-20 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9121237B2 (en) 2011-07-28 2015-09-01 Baker Hughes Incorporated Methods of coating wellbore tools and components having such coatings
KR102058760B1 (ko) 2011-10-10 2019-12-23 브레우어 사이언스 인코포레이션 리소그래피 처리를 위한 스핀-온 탄소 조성물
WO2013141015A1 (ja) * 2012-03-23 2013-09-26 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
KR101866209B1 (ko) 2012-05-07 2018-06-11 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성조성물
KR102011446B1 (ko) * 2013-02-26 2019-10-14 삼성전자주식회사 반도체 소자의 박막 패턴 형성 방법
KR101667788B1 (ko) * 2013-12-31 2016-10-19 제일모직 주식회사 하드마스크 조성물 및 이를 사용한 패턴 형성 방법
KR101754901B1 (ko) * 2014-05-16 2017-07-06 제일모직 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR102310120B1 (ko) 2015-01-30 2021-10-08 삼성전자주식회사 하드마스크 물질막의 형성 방법
US11022886B2 (en) * 2017-05-17 2021-06-01 Taiwan Semiconductor Manufacturing Co,, Ltd. Bottom-up material formation for planarization

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4175175A (en) * 1963-07-16 1979-11-20 Union Carbide Corporation Polyarylene polyethers
US3615615A (en) * 1970-04-13 1971-10-26 Eastman Kodak Co Photographic emulsions including reactive quaternary salts
JPS4928315Y2 (de) 1971-05-26 1974-08-01
US3856751A (en) * 1972-06-14 1974-12-24 Eastman Kodak Co Diacid-xanthylium ion polyester and photographic element comprised thereof
DE2861696D1 (en) * 1977-09-07 1982-04-29 Ici Plc Thermoplastic aromatic polyetherketones, a method for their preparation and their application as electrical insulants
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4369090A (en) * 1980-11-06 1983-01-18 Texas Instruments Incorporated Process for etching sloped vias in polyimide insulators
US4910122A (en) * 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4996247A (en) * 1984-02-10 1991-02-26 General Electric Company Enhancing color stability to sterilizing radiation of polymer compositions
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
US4683024A (en) * 1985-02-04 1987-07-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication method using spin-on glass resins
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4742152A (en) * 1986-05-27 1988-05-03 United Technologies Corporation High temperature fluorinated polyimides
US5091047A (en) * 1986-09-11 1992-02-25 National Semiconductor Corp. Plasma etching using a bilayer mask
US4927736A (en) * 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
US4803147A (en) * 1987-11-24 1989-02-07 Hoechst Celanese Corporation Photosensitive polyimide polymer compositions
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JPH0260934A (ja) * 1988-06-28 1990-03-01 Amoco Corp 中間層絶縁体および基板被膜用の低誘電率、低水分吸収ポリイミドおよびコポリイミド
US5304626A (en) * 1988-06-28 1994-04-19 Amoco Corporation Polyimide copolymers containing 3,3',4,4'-tetracarboxybiphenyl dianhydride (BPDA) moieties
DE3835737A1 (de) * 1988-10-20 1990-04-26 Ciba Geigy Ag Positiv-fotoresists mit erhoehter thermischer stabilitaet
US5057399A (en) * 1989-03-31 1991-10-15 Tony Flaim Method for making polyimide microlithographic compositions soluble in alkaline media
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
JP3041972B2 (ja) * 1991-01-10 2000-05-15 富士通株式会社 半導体装置の製造方法
US5370969A (en) * 1992-07-28 1994-12-06 Sharp Kabushiki Kaisha Trilayer lithographic process
US5397684A (en) * 1993-04-27 1995-03-14 International Business Machines Corporation Antireflective polyimide dielectric for photolithography
JPH07183194A (ja) * 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
US5691101A (en) * 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
SG54108A1 (en) 1994-03-31 1998-11-16 Catalysts & Chem Ind Co Coating solution for formation of coating and use thereof
JP3033443B2 (ja) * 1994-06-29 2000-04-17 信越化学工業株式会社 反射防止膜材料
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JPH08110638A (ja) * 1994-10-13 1996-04-30 Hitachi Chem Co Ltd 感光性樹脂組成物およびレジスト像の製造法
US5688987A (en) * 1994-11-09 1997-11-18 Brewer Science, Inc. Non-subliming Mid-UV dyes and ultra-thin organic arcs having differential solubility
US5554473A (en) * 1994-11-23 1996-09-10 Mitsubishi Chemical America, Inc. Photoreceptor having charge transport layers containing a copolycarbonate and layer containing same
US5542971A (en) * 1994-12-01 1996-08-06 Pitney Bowes Bar codes using luminescent invisible inks
KR100441551B1 (ko) * 1995-07-12 2004-11-03 미쓰비시 엔지니어링-플라스틱스 코포레이션 폴리카르보네이트수지조성물
KR100223329B1 (ko) * 1995-12-29 1999-10-15 김영환 반도체 소자의 미세 패턴 제조방법
KR100206597B1 (ko) * 1995-12-29 1999-07-01 김영환 반도체 장치의 미세패턴 제조방법
US5739254A (en) * 1996-08-29 1998-04-14 Xerox Corporation Process for haloalkylation of high performance polymers
JPH10149531A (ja) 1996-11-15 1998-06-02 Sony Corp 磁気記録媒体及びその製造方法
US5952448A (en) * 1996-12-31 1999-09-14 Korea Research Institute Of Chemical Technology Stable precursor of polyimide and a process for preparing the same
WO1998039496A1 (en) * 1997-03-07 1998-09-11 Corning Incorporated Method of making titania-doped fused silica
JPH10307394A (ja) 1997-05-09 1998-11-17 Hitachi Ltd ポジ型感光性樹脂組成物とそれを用いたパターン形成方法並びに電子装置の製法
US6054254A (en) * 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
JP3039467B2 (ja) * 1997-07-31 2000-05-08 日本電気株式会社 レジスト現像方法
US6218292B1 (en) * 1997-12-18 2001-04-17 Advanced Micro Devices, Inc. Dual layer bottom anti-reflective coating
US6338936B1 (en) * 1998-02-02 2002-01-15 Taiyo Ink Manufacturing Co., Ltd. Photosensitive resin composition and method for formation of resist pattern by use thereof
US5998569A (en) * 1998-03-17 1999-12-07 International Business Machines Corporation Environmentally stable optical filter materials
US6156665A (en) * 1998-04-13 2000-12-05 Lucent Technologies Inc. Trilayer lift-off process for semiconductor device metallization
US6451498B1 (en) * 1998-05-28 2002-09-17 Atotech Deutschland Gmbh Photosensitive composition
JP3673399B2 (ja) * 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
US6976904B2 (en) * 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
US6071662A (en) * 1998-07-23 2000-06-06 Xerox Corporation Imaging member with improved anti-curl backing layer
US6380611B1 (en) * 1998-09-03 2002-04-30 Micron Technology, Inc. Treatment for film surface to reduce photo footing
US6361833B1 (en) * 1998-10-28 2002-03-26 Henkel Corporation Composition and process for treating metal surfaces
US6165695A (en) * 1998-12-01 2000-12-26 Advanced Micro Devices, Inc. Thin resist with amorphous silicon hard mask for via etch application
US6127070A (en) * 1998-12-01 2000-10-03 Advanced Micro Devices, Inc. Thin resist with nitride hard mask for via etch application
US6162587A (en) * 1998-12-01 2000-12-19 Advanced Micro Devices Thin resist with transition metal hard mask for via etch application
US6171763B1 (en) * 1998-12-02 2001-01-09 Advanced Micro Devices, Inc. Ultra-thin resist and oxide/nitride hard mask for metal etch
US6200907B1 (en) * 1998-12-02 2001-03-13 Advanced Micro Devices, Inc. Ultra-thin resist and barrier metal/oxide hard mask for metal etch
US6156658A (en) * 1998-12-02 2000-12-05 Advanced Micro Devices, Inc. Ultra-thin resist and silicon/oxide hard mask for metal etch
US6306560B1 (en) * 1998-12-02 2001-10-23 Advanced Micro Devices, Inc. Ultra-thin resist and SiON/oxide hard mask for metal etch
US6020269A (en) * 1998-12-02 2000-02-01 Advanced Micro Devices, Inc. Ultra-thin resist and nitride/oxide hard mask for metal etch
US6309926B1 (en) * 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6046112A (en) * 1998-12-14 2000-04-04 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing slurry
US6251562B1 (en) * 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
US6136511A (en) * 1999-01-20 2000-10-24 Micron Technology, Inc. Method of patterning substrates using multilayer resist processing
US6136679A (en) * 1999-03-05 2000-10-24 Taiwan Semiconductor Manufacturing Company Gate micro-patterning process
US6110653A (en) * 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
WO2001015211A1 (en) * 1999-08-26 2001-03-01 Brewer Science Improved fill material for dual damascene processes
US20020009599A1 (en) * 2000-01-26 2002-01-24 Welch Cletus N. Photochromic polyurethane coating and articles having such a coating
TW439118B (en) * 2000-02-10 2001-06-07 Winbond Electronics Corp Multilayer thin photoresist process
JP2001344732A (ja) * 2000-05-29 2001-12-14 Fujitsu Ltd 磁気記録媒体用基板及びその製造方法、並びに磁気記録媒体の評価方法
JP2001338926A (ja) * 2000-05-29 2001-12-07 Sony Corp 半導体装置の製造方法
US6455416B1 (en) 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
KR100416596B1 (ko) * 2001-05-10 2004-02-05 삼성전자주식회사 반도체 소자의 연결 배선 형성 방법
US6680252B2 (en) * 2001-05-15 2004-01-20 United Microelectronics Corp. Method for planarizing barc layer in dual damascene process
ATE334809T1 (de) * 2001-05-29 2006-08-15 Essilor Int Verfahren zur herstellung von einem beschichteten optischen gegenstand
US6670425B2 (en) 2001-06-05 2003-12-30 Brewer Science, Inc. Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
US6458705B1 (en) * 2001-06-06 2002-10-01 United Microelectronics Corp. Method for forming via-first dual damascene interconnect structure
JP3708472B2 (ja) * 2001-10-12 2005-10-19 東京応化工業株式会社 レジストパターン形成方法および半導体デバイスの製造方法
US6624068B2 (en) * 2001-08-24 2003-09-23 Texas Instruments Incorporated Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography
US6586560B1 (en) * 2001-09-18 2003-07-01 Microchem Corp. Alkaline soluble maleimide-containing polymers
US6916537B2 (en) * 2001-11-01 2005-07-12 Transitions Optical Inc. Articles having a photochromic polymeric coating
JP3773445B2 (ja) * 2001-12-19 2006-05-10 セントラル硝子株式会社 含フッ素脂環族ジアミンおよびこれを用いた重合体
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) * 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
US6488509B1 (en) * 2002-01-23 2002-12-03 Taiwan Semiconductor Manufacturing Company Plug filling for dual-damascene process
KR20030068729A (ko) * 2002-02-16 2003-08-25 삼성전자주식회사 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법
US6911293B2 (en) * 2002-04-11 2005-06-28 Clariant Finance (Bvi) Limited Photoresist compositions comprising acetals and ketals as solvents
US6849293B2 (en) * 2002-05-02 2005-02-01 Institute Of Microelectronics Method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process
US7265431B2 (en) 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US6740469B2 (en) * 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6638853B1 (en) * 2002-07-03 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for avoiding photoresist resist residue on semioconductor feature sidewalls
KR20040009384A (ko) * 2002-07-23 2004-01-31 삼성전자주식회사 포토레지스트용 현상액에 용해되는 유기 바닥 반사 방지조성물과 이를 이용한 사진 식각 공정
US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
US20040077173A1 (en) * 2002-10-17 2004-04-22 Swaminathan Sivakumar Using water soluble bottom anti-reflective coating
KR100487948B1 (ko) * 2003-03-06 2005-05-06 삼성전자주식회사 이중 다마신 기술을 사용하여 비아콘택 구조체를 형성하는방법
KR100539494B1 (ko) * 2003-05-02 2005-12-29 한국전자통신연구원 전기광학 및 비선형 광학 고분자로서의 곁사슬형폴리아미드 에스테르, 그것의 제조 방법 및 그것으로부터제조된 필름
ATE377036T1 (de) 2003-05-23 2007-11-15 Dow Corning Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
US7364832B2 (en) * 2003-06-11 2008-04-29 Brewer Science Inc. Wet developable hard mask in conjunction with thin photoresist for micro photolithography

Also Published As

Publication number Publication date
US20050148170A1 (en) 2005-07-07
WO2005038878A2 (en) 2005-04-28
KR101189397B1 (ko) 2012-10-11
JP2007513491A (ja) 2007-05-24
EP1673801A4 (de) 2010-04-07
US7364835B2 (en) 2008-04-29
KR20060126954A (ko) 2006-12-11
EP1673801A2 (de) 2006-06-28
WO2005038878A3 (en) 2006-12-07
EP1673801B1 (de) 2014-04-09

Similar Documents

Publication Publication Date Title
JP5368674B2 (ja) 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法
KR100990040B1 (ko) 진보된 마이크로리소그래피용 유기 반사방지 코팅 조성물
USRE40920E1 (en) Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
KR100662542B1 (ko) 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
KR100908601B1 (ko) 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법
KR101027606B1 (ko) 다수의 에폭시 부분을 가진 소 코어 분자로부터 유도된바닥 반사 방지 코팅제
KR100697979B1 (ko) 반사방지 하드마스크 조성물
KR101174086B1 (ko) 고분자, 고분자 조성물, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용하는 재료의 패턴화 방법
KR100826103B1 (ko) 반사방지 하드마스크 조성물
KR100673625B1 (ko) 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
WO2008075860A1 (en) High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method
US7976894B1 (en) Materials with thermally reversible curing mechanism

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070910

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111101

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120828

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130326

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130626

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130726

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130820

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130913

R150 Certificate of patent or registration of utility model

Ref document number: 5368674

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250