EP0164083B1
(de)
*
|
1984-06-07 |
1991-05-02 |
Hoechst Aktiengesellschaft |
Positiv arbeitende strahlungsempfindliche Beschichtungslösung
|
US5143814A
(en)
*
|
1984-06-11 |
1992-09-01 |
Hoechst Celanese Corporation |
Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
|
JPH0766183B2
(ja)
*
|
1985-05-15 |
1995-07-19 |
三菱化学株式会社 |
ポジ型フオトレジスト組成物
|
DE3523176A1
(de)
*
|
1985-06-28 |
1987-01-08 |
Hoechst Ag |
Strahlungsempfindliche beschichtungsloesung und verfahren zur herstellung einer strahlungsempfindlichen schicht auf einem schichttraeger
|
JPS62123444A
(ja)
*
|
1985-08-07 |
1987-06-04 |
Japan Synthetic Rubber Co Ltd |
ポジ型感放射線性樹脂組成物
|
US5215857A
(en)
*
|
1985-08-07 |
1993-06-01 |
Japan Synthetic Rubber Co., Ltd. |
1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
|
US5238774A
(en)
*
|
1985-08-07 |
1993-08-24 |
Japan Synthetic Rubber Co., Ltd. |
Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
EP0226741B1
(de)
*
|
1985-10-25 |
1989-08-02 |
Hoechst Celanese Corporation |
Verfahren zur Herstellung eines positiv arbeitenden Photoresists
|
DE3667109D1
(en)
*
|
1985-10-28 |
1989-12-28 |
Hoechst Celanese Corp |
Liquid for the treatment of a photoresist composition, and process therefor
|
US4948697A
(en)
*
|
1985-10-28 |
1990-08-14 |
Hoechst Celanese Corporation |
Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
ATE56545T1
(de)
*
|
1985-10-28 |
1990-09-15 |
Hoechst Celanese Corp |
Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial.
|
US4806458A
(en)
*
|
1985-10-28 |
1989-02-21 |
Hoechst Celanese Corporation |
Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
|
US4692398A
(en)
*
|
1985-10-28 |
1987-09-08 |
American Hoechst Corporation |
Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
US5039594A
(en)
*
|
1985-10-28 |
1991-08-13 |
Hoechst Celanese Corporation |
Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
|
US4983490A
(en)
*
|
1985-10-28 |
1991-01-08 |
Hoechst Celanese Corporation |
Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
JPS62194249A
(ja)
*
|
1986-02-20 |
1987-08-26 |
Fuji Photo Film Co Ltd |
ポジ型感光性組成物
|
US4845008A
(en)
*
|
1986-02-20 |
1989-07-04 |
Fuji Photo Film Co., Ltd. |
Light-sensitive positive working, o-guinone diazide presensitized plate with mixed solvent
|
JPH0743501B2
(ja)
*
|
1986-04-24 |
1995-05-15 |
富士写真フイルム株式会社 |
ポジ型感光性平版印刷版
|
US4902785A
(en)
*
|
1986-05-02 |
1990-02-20 |
Hoechst Celanese Corporation |
Phenolic photosensitizers containing quinone diazide and acidic halide substituents
|
US4732836A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
US5162510A
(en)
*
|
1986-05-02 |
1992-11-10 |
Hoechst Celanese Corporation |
Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
|
US5035976A
(en)
*
|
1986-05-02 |
1991-07-30 |
Hoechst Celanese Corporation |
Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
|
US4732837A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
KR920001450B1
(ko)
*
|
1986-12-23 |
1992-02-14 |
쉬플리 캄파니 인코포레이티드 |
감광성 내식막의 제조방법, 감광성 내식막 조성물 및 이의 제조방법
|
JPS63178228A
(ja)
*
|
1987-01-20 |
1988-07-22 |
Fuji Photo Film Co Ltd |
ポジ型フオトレジスト組成物
|
JP2719912B2
(ja)
*
|
1987-05-07 |
1998-02-25 |
コニカ株式会社 |
感光性平版印刷版
|
US4927956A
(en)
*
|
1987-09-16 |
1990-05-22 |
Hoechst Celanese Corporation |
3,5-disubstituted-4-acetoxystyrene and process for its production
|
EP0349301A3
(en)
*
|
1988-06-28 |
1990-12-27 |
Mitsubishi Kasei Corporation |
Positive-type photoresist composition
|
JP2947519B2
(ja)
*
|
1988-10-03 |
1999-09-13 |
コニカ株式会社 |
感光性平版印刷版
|
US5342727A
(en)
*
|
1988-10-21 |
1994-08-30 |
Hoechst Celanese Corp. |
Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
|
US4965167A
(en)
*
|
1988-11-10 |
1990-10-23 |
Olin Hunt Specialty Products, Inc. |
Positive-working photoresist employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent
|
US5063138A
(en)
*
|
1988-11-10 |
1991-11-05 |
Ocg Microelectronic Materials, Inc. |
Positive-working photoresist process employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent during photoresist coating
|
JP2697039B2
(ja)
*
|
1988-12-06 |
1998-01-14 |
住友化学工業株式会社 |
ポジ型レジスト組成物の製造方法
|
US5075194A
(en)
*
|
1990-01-09 |
1991-12-24 |
Industrial Technology Research Institute |
Positive photoresist composition containing 4,4-diester, 4,5-diester, or 5,5-diester of spiroglycol and 1-oxo-2-diazonaphthalene-5-sulfonic acid chloride
|
JP2624555B2
(ja)
*
|
1990-01-16 |
1997-06-25 |
東京応化工業株式会社 |
ポジ型レジストパターン形成方法
|
JPH04306658A
(ja)
*
|
1990-11-28 |
1992-10-29 |
Hoechst Celanese Corp |
陽画フォトレジスト組成物
|
JPH0627655A
(ja)
*
|
1990-11-28 |
1994-02-04 |
Hoechst Celanese Corp |
ポジ型フォトレジスト組成物
|
US5362597A
(en)
*
|
1991-05-30 |
1994-11-08 |
Japan Synthetic Rubber Co., Ltd. |
Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
|
CA2097791A1
(en)
*
|
1992-08-28 |
1994-03-01 |
Sunit S. Dixit |
High aspect ratio, flexible thick film positive photoresist
|
EP0637776B1
(en)
*
|
1993-02-16 |
1997-11-26 |
Sumitomo Bakelite Company Limited |
Photosensitive resin composition and process for forming relief pattern therefrom
|
US5756260A
(en)
*
|
1993-02-16 |
1998-05-26 |
Sumitomo Bakelite Company Limited |
Photosensitive polyimide resin composition containing a stabilizer and method for formation of relief pattern using same
|
US5656414A
(en)
*
|
1993-04-23 |
1997-08-12 |
Fujitsu Limited |
Methods of forming tall, high-aspect ratio vias and trenches in photo-imageable materials, photoresist materials, and the like
|
KR960015081A
(ko)
*
|
1993-07-15 |
1996-05-22 |
마쯔모또 에이이찌 |
화학증폭형 레지스트 조성물
|
US5853947A
(en)
*
|
1995-12-21 |
1998-12-29 |
Clariant Finance (Bvi) Limited |
Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
|
US6136498A
(en)
*
|
1996-06-28 |
2000-10-24 |
International Business Machines Corporation |
Polymer-bound sensitizer
|
JP3057010B2
(ja)
*
|
1996-08-29 |
2000-06-26 |
東京応化工業株式会社 |
ポジ型レジスト組成物及びレジストパターンの形成方法
|
US7285422B1
(en)
|
1997-01-23 |
2007-10-23 |
Sequenom, Inc. |
Systems and methods for preparing and analyzing low volume analyte array elements
|
JPH10186680A
(ja)
*
|
1996-12-26 |
1998-07-14 |
Clariant Internatl Ltd |
リンス液
|
US6383712B1
(en)
|
1998-06-05 |
2002-05-07 |
International Business Machines Corporation |
Polymer-bound sensitizer
|
JP2000347397A
(ja)
|
1999-06-04 |
2000-12-15 |
Jsr Corp |
感放射線性樹脂組成物およびその層間絶縁膜への使用
|
US6404615B1
(en)
|
2000-02-16 |
2002-06-11 |
Intarsia Corporation |
Thin film capacitors
|
US6486530B1
(en)
|
2000-10-16 |
2002-11-26 |
Intarsia Corporation |
Integration of anodized metal capacitors and high temperature deposition capacitors
|
EP1332000B1
(en)
|
2000-10-30 |
2012-06-20 |
Sequenom, Inc. |
Method for delivery of submicroliter volumes onto a substrate
|
JP4156400B2
(ja)
*
|
2003-02-24 |
2008-09-24 |
東京応化工業株式会社 |
ポジ型ホトレジスト組成物及びレジストパターンの形成方法
|
KR101042667B1
(ko)
*
|
2004-07-05 |
2011-06-20 |
주식회사 동진쎄미켐 |
포토레지스트 조성물
|
US20090180931A1
(en)
|
2007-09-17 |
2009-07-16 |
Sequenom, Inc. |
Integrated robotic sample transfer device
|
WO2010013642A1
(ja)
|
2008-07-29 |
2010-02-04 |
東亞合成株式会社 |
導電性高分子のパターン形成方法
|
JP5792548B2
(ja)
*
|
2011-07-28 |
2015-10-14 |
東京応化工業株式会社 |
ガラス加工方法
|
CN103543606B
(zh)
*
|
2012-07-09 |
2020-07-10 |
东京应化工业株式会社 |
玻璃加工用感光性树脂组合物及玻璃加工方法
|