ZA823251B - Alterable threshold semiconductor memory device - Google Patents
Alterable threshold semiconductor memory deviceInfo
- Publication number
- ZA823251B ZA823251B ZA823251A ZA823251A ZA823251B ZA 823251 B ZA823251 B ZA 823251B ZA 823251 A ZA823251 A ZA 823251A ZA 823251 A ZA823251 A ZA 823251A ZA 823251 B ZA823251 B ZA 823251B
- Authority
- ZA
- South Africa
- Prior art keywords
- memory device
- semiconductor memory
- threshold semiconductor
- alterable threshold
- alterable
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26238081A | 1981-05-11 | 1981-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA823251B true ZA823251B (en) | 1983-03-30 |
Family
ID=22997252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA823251A ZA823251B (en) | 1981-05-11 | 1982-05-11 | Alterable threshold semiconductor memory device |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0078318A4 (fr) |
JP (1) | JPS58500683A (fr) |
DK (1) | DK6283A (fr) |
WO (1) | WO1982004162A1 (fr) |
ZA (1) | ZA823251B (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59143331A (ja) * | 1983-01-31 | 1984-08-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体構造体 |
JP2755781B2 (ja) * | 1990-04-23 | 1998-05-25 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JPH0548115A (ja) * | 1991-08-20 | 1993-02-26 | Rohm Co Ltd | 半導体不揮発性記憶装置 |
JP3635681B2 (ja) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
US6265268B1 (en) * | 1999-10-25 | 2001-07-24 | Advanced Micro Devices, Inc. | High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
US6528845B1 (en) * | 2000-07-14 | 2003-03-04 | Lucent Technologies Inc. | Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection |
US6812517B2 (en) | 2002-08-29 | 2004-11-02 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA942641A (en) * | 1970-05-25 | 1974-02-26 | Rca Corporation | Semiconductor body of preselected surface potential |
JPS49116982A (fr) * | 1973-12-14 | 1974-11-08 | ||
DE2723738C2 (de) * | 1977-05-26 | 1984-11-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung |
US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
US4249191A (en) * | 1978-04-21 | 1981-02-03 | Mcdonnell Douglas Corporation | Stripped nitride structure and process therefor |
DE2832388C2 (de) * | 1978-07-24 | 1986-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat |
US4242737A (en) * | 1978-11-27 | 1980-12-30 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
WO1981000790A1 (fr) * | 1979-09-13 | 1981-03-19 | Ncr Co | Dispositif de memoire remanente a porte de silicium |
DE3032364C2 (de) * | 1980-08-28 | 1987-11-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung |
-
1982
- 1982-05-07 JP JP57501921A patent/JPS58500683A/ja active Pending
- 1982-05-07 EP EP19820901890 patent/EP0078318A4/fr not_active Withdrawn
- 1982-05-07 WO PCT/US1982/000600 patent/WO1982004162A1/fr not_active Application Discontinuation
- 1982-05-11 ZA ZA823251A patent/ZA823251B/xx unknown
-
1983
- 1983-01-10 DK DK6283A patent/DK6283A/da not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0078318A1 (fr) | 1983-05-11 |
EP0078318A4 (fr) | 1983-06-24 |
DK6283D0 (da) | 1983-01-10 |
WO1982004162A1 (fr) | 1982-11-25 |
DK6283A (da) | 1983-01-10 |
JPS58500683A (ja) | 1983-04-28 |
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