DK6283A - Halvlederelement med variabel taerskel - Google Patents
Halvlederelement med variabel taerskel Download PDFInfo
- Publication number
- DK6283A DK6283A DK6283A DK6283A DK6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A DK 6283 A DK6283 A DK 6283A
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor element
- variable threshold
- threshold
- variable
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26238081A | 1981-05-11 | 1981-05-11 | |
| PCT/US1982/000600 WO1982004162A1 (fr) | 1981-05-11 | 1982-05-07 | Dispositif de memoire a semi-conducteur a seuil modifiable |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK6283A true DK6283A (da) | 1983-01-10 |
| DK6283D0 DK6283D0 (da) | 1983-01-10 |
Family
ID=22997252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK0062/83A DK6283D0 (da) | 1981-05-11 | 1983-01-10 | Halvlederelement med variabel taerskel |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0078318A4 (fr) |
| JP (1) | JPS58500683A (fr) |
| DK (1) | DK6283D0 (fr) |
| WO (1) | WO1982004162A1 (fr) |
| ZA (1) | ZA823251B (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59143331A (ja) * | 1983-01-31 | 1984-08-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体構造体 |
| JP2755781B2 (ja) * | 1990-04-23 | 1998-05-25 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| JPH0548115A (ja) * | 1991-08-20 | 1993-02-26 | Rohm Co Ltd | 半導体不揮発性記憶装置 |
| JP3635681B2 (ja) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
| US6265268B1 (en) * | 1999-10-25 | 2001-07-24 | Advanced Micro Devices, Inc. | High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
| US6528845B1 (en) * | 2000-07-14 | 2003-03-04 | Lucent Technologies Inc. | Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection |
| US6812517B2 (en) | 2002-08-29 | 2004-11-02 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA942641A (en) * | 1970-05-25 | 1974-02-26 | Rca Corporation | Semiconductor body of preselected surface potential |
| JPS49116982A (fr) * | 1973-12-14 | 1974-11-08 | ||
| DE2723738C2 (de) * | 1977-05-26 | 1984-11-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung |
| US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
| US4249191A (en) * | 1978-04-21 | 1981-02-03 | Mcdonnell Douglas Corporation | Stripped nitride structure and process therefor |
| DE2832388C2 (de) * | 1978-07-24 | 1986-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat |
| US4242737A (en) * | 1978-11-27 | 1980-12-30 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
| JPS56501146A (fr) * | 1979-09-13 | 1981-08-13 | ||
| DE3032364C2 (de) * | 1980-08-28 | 1987-11-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung |
-
1982
- 1982-05-07 JP JP57501921A patent/JPS58500683A/ja active Pending
- 1982-05-07 WO PCT/US1982/000600 patent/WO1982004162A1/fr not_active Application Discontinuation
- 1982-05-07 EP EP19820901890 patent/EP0078318A4/fr not_active Withdrawn
- 1982-05-11 ZA ZA823251A patent/ZA823251B/xx unknown
-
1983
- 1983-01-10 DK DK0062/83A patent/DK6283D0/da not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1982004162A1 (fr) | 1982-11-25 |
| EP0078318A4 (fr) | 1983-06-24 |
| JPS58500683A (ja) | 1983-04-28 |
| DK6283D0 (da) | 1983-01-10 |
| ZA823251B (en) | 1983-03-30 |
| EP0078318A1 (fr) | 1983-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ATS | Application withdrawn |