YU6083A - Growth method of a monocrystalline silicon on a masking layer - Google Patents

Growth method of a monocrystalline silicon on a masking layer

Info

Publication number
YU6083A
YU6083A YU00060/83A YU6083A YU6083A YU 6083 A YU6083 A YU 6083A YU 00060/83 A YU00060/83 A YU 00060/83A YU 6083 A YU6083 A YU 6083A YU 6083 A YU6083 A YU 6083A
Authority
YU
Yugoslavia
Prior art keywords
monocrystalline silicon
masking layer
growth method
growth
masking
Prior art date
Application number
YU00060/83A
Other languages
English (en)
Inventor
Jr J F Corboy
L L Jastrzebski
S C Blackstone
Jr R H Pagliaro
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23326867&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=YU6083(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU6083A publication Critical patent/YU6083A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
YU00060/83A 1982-01-12 1983-01-12 Growth method of a monocrystalline silicon on a masking layer YU6083A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33895882A 1982-01-12 1982-01-12

Publications (1)

Publication Number Publication Date
YU6083A true YU6083A (en) 1985-10-31

Family

ID=23326867

Family Applications (1)

Application Number Title Priority Date Filing Date
YU00060/83A YU6083A (en) 1982-01-12 1983-01-12 Growth method of a monocrystalline silicon on a masking layer

Country Status (8)

Country Link
JP (1) JPS58120595A (https=)
DE (1) DE3300716A1 (https=)
FR (1) FR2522695B1 (https=)
GB (1) GB2113465B (https=)
IN (1) IN157312B (https=)
IT (1) IT1173651B (https=)
SE (1) SE462756B (https=)
YU (1) YU6083A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US4829016A (en) * 1987-10-19 1989-05-09 Purdue Research Foundation Bipolar transistor by selective and lateral epitaxial overgrowth
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
JP4832022B2 (ja) * 2005-07-29 2011-12-07 株式会社日立国際電気 基板処理装置
JP2010141079A (ja) * 2008-12-11 2010-06-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2010147142A (ja) * 2008-12-17 2010-07-01 Hitachi Kokusai Electric Inc 半導体製造方法と装置
US20110272011A1 (en) * 2009-06-05 2011-11-10 Amberwave, Inc. Solar Cell
JP2012054364A (ja) * 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
CN115198352B (zh) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 一种外延生长方法及外延晶圆

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131048C (https=) * 1960-01-15
US3746608A (en) * 1963-05-14 1973-07-17 Nitto Boseki Co Ltd Shaped article of synthetic resin having mechanically disordered orientation
DE2059116C3 (de) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Halbleiterbauelementes
US3945864A (en) * 1974-05-28 1976-03-23 Rca Corporation Method of growing thick expitaxial layers of silicon
DE3008058A1 (de) * 1980-03-03 1981-09-17 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur herstellung einer monolithisch integrierten halbleiterschaltungsanordnung

Also Published As

Publication number Publication date
SE8300040L (sv) 1983-07-13
FR2522695B1 (fr) 1987-02-27
SE8300040D0 (sv) 1983-01-04
SE462756B (sv) 1990-08-27
IT8319043A0 (it) 1983-01-10
IT1173651B (it) 1987-06-24
JPH0435439B2 (https=) 1992-06-11
DE3300716C2 (https=) 1993-01-21
DE3300716A1 (de) 1983-07-21
GB2113465A (en) 1983-08-03
IN157312B (https=) 1986-03-01
JPS58120595A (ja) 1983-07-18
FR2522695A1 (fr) 1983-09-09
GB2113465B (en) 1986-08-06

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