WO2024232162A1 - 接合体 - Google Patents

接合体 Download PDF

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Publication number
WO2024232162A1
WO2024232162A1 PCT/JP2024/010094 JP2024010094W WO2024232162A1 WO 2024232162 A1 WO2024232162 A1 WO 2024232162A1 JP 2024010094 W JP2024010094 W JP 2024010094W WO 2024232162 A1 WO2024232162 A1 WO 2024232162A1
Authority
WO
WIPO (PCT)
Prior art keywords
plate
layer
bonded body
amorphous layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/010094
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
智毅 長江
喬紘 山寺
宏太 尾関
啓知 高濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to KR1020247032189A priority Critical patent/KR20260007047A/ko
Priority to JP2024556744A priority patent/JPWO2024232162A1/ja
Priority to CN202480001861.3A priority patent/CN121057718A/zh
Priority to US18/897,101 priority patent/US12539690B2/en
Publication of WO2024232162A1 publication Critical patent/WO2024232162A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/737—Dimensions, e.g. volume or area
    • B32B2307/7375—Linear, e.g. length, distance or width
    • B32B2307/7376—Thickness
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/55—Pre-treatments of a coated or not coated substrate other than oxidation treatment in order to form an active joining layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface

Definitions

  • the present invention relates to a joint.
  • a bonded body in which a silicon plate and a piezoelectric material plate are bonded using fast atom beam (FAB) (see, for example, Patent Document 1).
  • FAB fast atom beam
  • the present invention was made to solve these problems, and its main objective is to obtain a joint with high joint strength.
  • the bonded body of the present invention is A first plate; A second plate of the same type or a different type as the first plate; an amorphous layer present at a bonding interface between the first plate and the second plate; a first plate affected layer present on a side of the first plate that contacts the amorphous layer; a second plate affected layer present on a side of the second plate that contacts the amorphous layer; It is equipped with the following:
  • This joint has a relatively high joint strength.
  • the thickness of the amorphous layer may be 0.1 nm or more.
  • the thickness of the first plate alteration layer may be 10 nm or more, and the thickness of the second plate alteration layer may be 10 nm.
  • the first plate and the second plate may be dense bodies.
  • the first plate may be a plate made of a metal compound
  • the second plate may be a plate made of the same or different metal compound as the first plate.
  • the metal compound may be one selected from metal oxides, metal nitrides, and metal carbides.
  • At least one of the first plate and the second plate may be ceramic, and both the first plate and the second plate may be alumina ceramic.
  • the diameter of the bonded body may be 100 mm or more and 500 mm or less.
  • FIG. 2 is a cross-sectional view taken along line AA in FIG. 1 .
  • Figure 1 is a perspective view of the joint 10
  • Figure 2 is a cross-sectional view taken along the line A-A in Figure 1.
  • the bonded body 10 includes a first plate 11, a second plate 12, and an amorphous layer 13. If the first plate 11 and the second plate 12 are made of different materials, the amorphous layer 13 may be one or more layers.
  • the diameter of the bonded body 10 may be, for example, 100 mm or more and 500 mm or less.
  • the first plate 11 is a plate made of a metal compound.
  • the metal compound may be, for example, one selected from a metal oxide, a metal nitride , and a metal carbide .
  • the metal oxide may be, for example, Al2O3 .
  • the metal nitride may be, for example, AlN or Si3N4 .
  • the metal carbide may be, for example, SiC.
  • the thickness of the first plate 11 is, for example, 100 ⁇ m or more and 15 mm or less.
  • the first plate 11 may be a dense body.
  • the second plate 12 is a plate made of the same or different metal compound as the first plate 11.
  • the second plate 12 may be a plate made of a metal compound of the same type as the first plate 11 but with different properties (e.g., plasma resistance, thermal conductivity, volume resistivity, etc.).
  • the metal compound may be, for example, one selected from metal oxides, metal nitrides, and metal carbides. Examples of metal oxides include Al2O3 , etc. Examples of metal nitrides include AlN and Si3N4 , etc. Examples of metal carbides include SiC, etc.
  • the thickness of the second plate 12 is, for example, 100 ⁇ m or more and 15 mm or less.
  • the second plate 12 may be a dense body.
  • At least one of the first plate 11 and the second plate 12 may be ceramic. Also, both the first plate 11 and the second plate 12 may be alumina ceramic. Also, the first plate 11 may be sapphire and the second plate 12 may be alumina ceramic.
  • the amorphous layer 13 is present at the bonding interface between the first plate 11 and the second plate 12.
  • the amorphous layer 13 shows a broad peak compared to the first plate 11 and the second plate 12.
  • TEM transmission electron microscope
  • the thickness of the amorphous layer 13 is preferably 0.1 nm or more, more preferably 0.1 nm or more to 30 nm or less, and even more preferably 1 nm or more to 20 nm or less.
  • the thickness of the amorphous layer 13 measured by TEM observation is measured by the following procedure.
  • the thickness of the amorphous layer 40 is measured at five points at 10 nm intervals along the bonding interface, and the average thickness of the amorphous layer in one field of view is calculated. Similar thickness measurements using TEM observation are performed in three fields of view without bias, including near the center, near the outer periphery, and near the center of the radius when the semiconductor manufacturing equipment component is viewed in plan. The average thickness of the amorphous layer 13 in the three fields of view is then taken as the measured value.
  • the first plate 11 has a first plate altered layer 11a on the side in contact with the amorphous layer 13.
  • the first plate altered layer 11a has a broad peak compared to the other parts of the first plate 11 other than the first plate altered layer 11a, but a sharp peak compared to the amorphous layer 13.
  • the first plate altered layer 11a is observed as having a different form from the other parts of the first plate 11 other than the first plate altered layer 11a.
  • the thickness of the first plate altered layer 11a is preferably 10 nm or more, more preferably 100 nm or more and 1 ⁇ m or less, and even more preferably 100 nm or more and 600 nm or less.
  • the second plate 12 has a second plate altered layer 12a on the side in contact with the amorphous layer 13.
  • the second plate altered layer 12a has a broad peak compared to the other parts of the second plate 12 other than the second plate altered layer 12a, but a sharp peak compared to the amorphous layer 13.
  • the second plate altered layer 12a is observed as having a different form from the other parts of the second plate 12 other than the second plate altered layer 12a.
  • the thickness of the second plate altered layer 12a is preferably 10 nm or more, more preferably 100 nm or more and 1 ⁇ m or less, and even more preferably 100 nm or more and 600 nm or less.
  • the measured values of the thicknesses of the first plate altered layer 11a and the second plate altered layer 12a by TEM observation are measured by the following procedure. On a TEM photograph (magnification: 500,000 times) of one field of view, the thicknesses of the first plate altered layer 11a and the second plate altered layer 12a are measured at five locations every 200 nm along the bonding interface, and the average value of the thicknesses of the first plate altered layer 11a and the second plate altered layer 12a in one field of view is calculated. Similar thickness measurements by TEM observation are performed without bias in three fields of view, including near the center, near the outer periphery, and near the center of the radius when the semiconductor manufacturing equipment member is viewed in a plan view. The average value of the thicknesses of the first plate altered layer 11a and the second plate altered layer 12a in the three fields of view is then taken as the measured value.
  • the joint 10 can be used as an electrostatic chuck.
  • the first plate 11 is formed from a dense ceramic (e.g., alumina ceramic), and an electrostatic electrode is embedded inside the first plate 11.
  • the first plate 11 and the second plate 12 are manufactured.
  • the first plate 11 may be manufactured by hot-pressing and firing a molded body containing a metal compound powder (e.g., ceramic powder). In this way, the first plate 11 can be made into a dense body.
  • the second plate 12 is manufactured in the same manner as the first plate 11. At this stage, the first plate 11 does not have a first plate altered layer 11a. The second plate 12 also does not have a second plate altered layer 12a.
  • the polishing device 20 includes a large-diameter disk-shaped polishing table 22 equipped with a polishing pad 24, a small-diameter disk-shaped carrier 26, and a pipe 28 for supplying a slurry containing polishing grains to the polishing pad 24.
  • the polishing table 22 includes a shaft in the center of the lower surface, and rotates (spins) on its axis when the shaft is rotated by a drive motor (not shown).
  • the carrier 26 includes a shaft in the center of the upper surface, and rotates (spins) on its axis when the shaft is rotated by a drive motor (not shown).
  • the carrier 26 is disposed at a position offset from the center of the polishing table 22.
  • the first plate 11 is attached to the lower surface of the carrier 26, and the first plate 11 is sandwiched between the polishing pad 24 of the polishing table 22 and the carrier 26.
  • a slurry containing polishing grains is supplied to the polishing pad 24 from the pipe 28.
  • a slurry is supplied between the first plate 11 and the polishing pad 24 of the polishing table 22.
  • the first plate 11 is pressed against the polishing pad 24 by the carrier 26 while the polishing table 22 and the carrier 26 are rotated to perform polishing.
  • the polishing conditions are set so that the surface roughness (arithmetic mean roughness) Ra of the lower surface of the first plate 11 is 1 nm or less.
  • the polishing conditions are set to use a slurry with an average abrasive grain size of 1 ⁇ m or less, and the polishing table 22 and the carrier 26 are rotated at a speed of 20 to 200 rpm.
  • the surface roughness Ra of the polished surface of the first plate 11 is 1 nm or less.
  • a first plate altered layer 11a is formed on the polished surface side of the first plate 11.
  • the surface roughness (arithmetic mean roughness) Ra of the polished surface is measured using a non-contact surface roughness meter in accordance with the ISO 25178 standard.
  • the second plate 12 is also subjected to lapping polishing using the polishing device 20 in the same manner as the first plate 11.
  • the surface roughness Ra of the polished surface of the second plate 12 is 1 nm or less.
  • a second plate altered layer 12a is formed on the polished surface side of the second plate 12.
  • the polished surface of the first plate 11 is irradiated with a fast atomic beam (FAB) under high vacuum
  • the polished surface of the second plate 12 is also irradiated with the FAB under high vacuum.
  • the FAB conditions are set, for example, at a voltage of 0.5 to 2 kV, a current of 50 to 200 mA, and an irradiation time of 30 to 300 seconds. This removes oxides and adsorbed molecules from the polished surfaces of the first plate 11 and the second plate 12, and the polished surfaces become amorphous (activated).
  • the plates 11 and 12 are overlapped so that the polished surface of the first plate 11 faces the polished surface of the second plate 12, and are bonded while applying pressure.
  • the load when applying pressure is set, for example, to 0.1 to 50 kN. This results in a bonded body 10 with high bonding strength.
  • the bonded body 10 described above has a relatively high bond strength between the plates 11, 12.
  • the first plate 11 and the second plate 12 are both ceramics (e.g., alumina ceramics)
  • a bonded body 10 with good bond strength can be obtained.
  • a bonded body 10 with good bond strength can be obtained, which makes it possible to use it for rework purposes, in porous parts, etc.
  • the first plate 11 and the second plate 12 dense alumina ceramic plates with a diameter of 100 mm, a thickness of 600 ⁇ m, and a purity of 99.9% or more were prepared.
  • the first plate 11 was subjected to lapping using small abrasive grains (average abrasive grain size 0.1 ⁇ m) so that the surface roughness Ra of one side of the first plate 11 was 0.5 nm or less.
  • the second plate 12 was also subjected to lapping so that the surface roughness Ra of one side of the second plate 12a was 0.5 nm or less.
  • FIG. 4(A) is an image when enlarged 500,000 times
  • FIG. 4(B) is an image when enlarged 4,000,000 times.
  • an amorphous layer 13 (a thin white stripe portion) having a measured thickness of 4.5 nm was present at the bonding interface between the first plate 11 and the second plate 12.
  • a first plate altered layer 11a was observed on the side of the first plate 11 that contacted the amorphous layer 13
  • a second plate altered layer 12a was observed on the side of the second plate 12 that contacted the amorphous layer 13.
  • an altered layer having a measured thickness of 300 nm was formed on both the first and second plates 11 and 12.
  • the bonding strength of the resulting bonded body 10 was measured by a crack opening method and was found to be 0.5 to 3.0 J/m 2 .
  • the present invention can be used for joining bodies, such as ceramic-ceramic joining bodies.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Ceramic Products (AREA)
  • Fuel Cell (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
PCT/JP2024/010094 2023-05-09 2024-03-14 接合体 Ceased WO2024232162A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020247032189A KR20260007047A (ko) 2023-05-09 2024-03-14 접합체
JP2024556744A JPWO2024232162A1 (https=) 2023-05-09 2024-03-14
CN202480001861.3A CN121057718A (zh) 2023-05-09 2024-03-14 接合体
US18/897,101 US12539690B2 (en) 2023-05-09 2024-09-26 Joined body

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023077440 2023-05-09
JP2023-077440 2023-05-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/897,101 Continuation US12539690B2 (en) 2023-05-09 2024-09-26 Joined body

Publications (1)

Publication Number Publication Date
WO2024232162A1 true WO2024232162A1 (ja) 2024-11-14

Family

ID=93431537

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/010094 Ceased WO2024232162A1 (ja) 2023-05-09 2024-03-14 接合体

Country Status (6)

Country Link
US (1) US12539690B2 (https=)
JP (1) JPWO2024232162A1 (https=)
KR (1) KR20260007047A (https=)
CN (1) CN121057718A (https=)
TW (1) TW202445709A (https=)
WO (1) WO2024232162A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06247776A (ja) * 1993-02-24 1994-09-06 Isuzu Motors Ltd 多孔セラミックス接合体及びその製造方法
JPH08268771A (ja) * 1995-03-29 1996-10-15 Ngk Insulators Ltd ガラス接合体およびその製造法
WO2014077213A1 (ja) * 2012-11-14 2014-05-22 日本碍子株式会社 複合基板
JP2021018998A (ja) * 2019-07-17 2021-02-15 信越化学工業株式会社 複合基板、および複合基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3557293A4 (en) * 2016-12-13 2020-08-05 NGK Insulators, Ltd. OPTICAL COMPONENT
KR102282238B1 (ko) 2018-02-13 2021-07-27 엔지케이 인슐레이터 엘티디 압전성 재료 기판과 지지 기판의 접합체
JP6698954B2 (ja) * 2018-05-17 2020-05-27 日本碍子株式会社 圧電性単結晶基板と支持基板との接合体
DE112019002418B4 (de) * 2018-06-22 2022-06-15 Ngk Insulators, Ltd. Verbundener Körper und Elastikwellenelement
WO2019244471A1 (ja) * 2018-06-22 2019-12-26 日本碍子株式会社 接合体および弾性波素子
JP7069338B2 (ja) * 2018-10-17 2022-05-17 日本碍子株式会社 接合体および弾性波素子
KR102596121B1 (ko) * 2018-10-17 2023-10-30 엔지케이 인슐레이터 엘티디 접합체 및 탄성파 소자
CN116348631A (zh) 2020-10-15 2023-06-27 日本碍子株式会社 13族元素氮化物结晶层的培养方法、氮化物半导体铸锭以及溅射靶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06247776A (ja) * 1993-02-24 1994-09-06 Isuzu Motors Ltd 多孔セラミックス接合体及びその製造方法
JPH08268771A (ja) * 1995-03-29 1996-10-15 Ngk Insulators Ltd ガラス接合体およびその製造法
WO2014077213A1 (ja) * 2012-11-14 2014-05-22 日本碍子株式会社 複合基板
JP2021018998A (ja) * 2019-07-17 2021-02-15 信越化学工業株式会社 複合基板、および複合基板の製造方法

Also Published As

Publication number Publication date
US20250018690A1 (en) 2025-01-16
TW202445709A (zh) 2024-11-16
JPWO2024232162A1 (https=) 2024-11-14
US12539690B2 (en) 2026-02-03
KR20260007047A (ko) 2026-01-13
CN121057718A (zh) 2025-12-02

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