WO2024143298A1 - 基材、及びその製造方法、並びにそれを用いた配線基板 - Google Patents

基材、及びその製造方法、並びにそれを用いた配線基板 Download PDF

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WO2024143298A1
WO2024143298A1 PCT/JP2023/046501 JP2023046501W WO2024143298A1 WO 2024143298 A1 WO2024143298 A1 WO 2024143298A1 JP 2023046501 W JP2023046501 W JP 2023046501W WO 2024143298 A1 WO2024143298 A1 WO 2024143298A1
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Prior art keywords
substrate
thin film
cte
linear expansion
expansion coefficient
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PCT/JP2023/046501
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English (en)
French (fr)
Japanese (ja)
Inventor
良 阿久津
薫 野宮
雅弘 鈴木
俊介 山尾
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株式会社 潤工社
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Priority to CN202380089706.7A priority Critical patent/CN120435387A/zh
Priority to JP2024567819A priority patent/JPWO2024143298A1/ja
Publication of WO2024143298A1 publication Critical patent/WO2024143298A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/027—Thermal properties
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate

Definitions

  • the present invention relates to a substrate and wiring board with excellent electrical and physical properties.
  • Wiring boards are often required to have low temperature resistance below -30°C and heat resistance above 260°C during their manufacturing process and subsequent use. A certain level of elasticity is required, and at the same time, flexibility and other suppleness are also required.
  • the substrate must have extremely fine patterns on the order of micrometers formed on its surface or inside with high precision. In thin substrates, warping caused by temperature changes can cause serious problems in terms of productivity and/or reliability. Therefore, the substrate that is the material for the wiring substrate is required to have thermal expansion characteristics with small distribution within the surface over a wide temperature range. However, the linear expansion coefficient of fluororesins in general is not sufficiently small to meet the high demands mentioned above.
  • Patent Document 1 discloses a fluororesin substrate containing hollow glass beads in the dielectric layer.
  • a substrate having a dielectric layer of glass cloth impregnated with fluororesin the high frequency characteristics are degraded due to the large relative dielectric constant ⁇ of the glass cloth.
  • the relative dielectric constant can be suppressed by using hollow glass beads.
  • the 50% particle diameter of the beads is 16 or 30 ⁇ m, which is about the same size as the conductor pattern to be formed.
  • Patent Document 2 discloses a printed wiring board comprising a dielectric layer having a porous layer mainly composed of fluororesin on one side, and a conductive pattern laminated on at least one side of the dielectric layer.
  • the dielectric layer of this printed wiring board is provided with a reinforcing layer having glass cloth on the other side of the porous layer, which is said to reduce warping, deformation, linear expansion changes, etc.
  • this printed wiring board has problems with deterioration of electrical properties, volume increase, and non-uniform physical properties due to the material of the reinforcing layer such as glass cloth.
  • Patent Document 4 a fluororesin film whose melting curve has an endothermic peak at a specific position and has a specific relationship between film thickness and haze value.
  • This fluororesin film has a relative dielectric constant of 2.1 or less at 30 GHz and a dielectric dissipation factor of 0.001 or less at 30 GHz.
  • This fluororesin film also has a linear expansion coefficient (hereinafter referred to as CTE) in the film's XY directions at 30 to 250°C of 100 ppm/°C or less, achieving both electrical properties and physical properties at a high level.
  • CTE linear expansion coefficient
  • the invention described in the claims of this application aims to provide a substrate and wiring board that stably possesses the high physical properties required of a substrate while maintaining the excellent electrical properties of fluororesin.
  • Such molecules have a smaller linear expansion coefficient in the direction in which they are stretched, so by controlling the shape of the polymer that constitutes the thin film, it is thought that a thin film with a controlled linear expansion coefficient can be obtained even if the chemical composition remains the same.
  • the means for obtaining such a linear molecular state include extrusion, rolling, and/or stretching of the polymer.
  • the molecular crystals constituting the material also approach an arrangement in which they are stretched in the same direction.
  • the direction in which the polymer constituting the material is stretched is biased to a specific direction, which is called orientation. It is considered that the higher the degree of orientation of a material with such orientation, i.e., the more molecules that extend along a specific direction, the smaller the linear expansion coefficient in that specific direction is suppressed.
  • thin films, base materials, or wiring boards often have an approximately rectangular outer shape or an outer shape that is a combination of approximately rectangular outer shapes for reasons of production efficiency, etc.
  • the linear expansion coefficients may be measured in the direction in which a specific side of the rectangle extends and in a direction perpendicular to that direction, and the small CTE direction and large CTE direction of the thin film may be determined based on the presence or absence of a relationship that satisfies the anisotropy of the linear expansion coefficient of the thin film described above.
  • the minor and major CTE directions for other thin films in the substrate, including thin film 120 can be determined in a similar manner.
  • the linear expansion coefficient CTE D1 in the D1 direction and the linear expansion coefficient CTE D2 in the D2 direction of the substrate 100 are both preferably 60 ppm/°C or less, more preferably 50 ppm/°C or less, even more preferably 45 ppm/°C or less, and particularly preferably 40 ppm/°C or less.
  • CTE D3 may be larger than either the linear expansion coefficient CTE D1 in the D1 direction of the substrate 100 or the linear expansion coefficient CTE D2 in the D2 direction.
  • CTE D3 may be larger than 60 ppm/° C., larger than 80 ppm/° C., or larger than 100 ppm/° C. Giving priority to low thermal expansion in the substrate surface direction over the substrate thickness direction is advantageous for improving the formability of fine patterns, thermal warping in thin substrates, or electrical properties.
  • the density of the thin film 110 is preferably greater than the density of the porous expanded PTFE.
  • the density of the thin film 110 is, for example, 1.8 g/cm 3 or more and 2.4 g/cm 3 or less, and preferably 1.9 g/cm 3 or more and 2.4 g/cm 3 or less.
  • the thin film 120 may have a similar density.
  • the substrate 100 may have a similar density.
  • the main component of the substrate 100 is preferably a fluororesin.
  • the proportion of the fluororesin in the substrate 100 may be 75% by weight or more, but is preferably 90% by weight or more. Furthermore, the proportion of the fluororesin in the substrate 100 is particularly preferably 95% by weight or more, and by making it 99.5% by weight or more, the excellent electrical properties inherent to the fluororesin can be almost completely exhibited.
  • the fluororesin may contain PTFE as the main component, similar to the thin film.
  • this is not a property caused by the porous structure itself consisting of so-called nodes and fibrils, but a physical property caused by the thin film having a crystal structure derived from fibrils generated by stretching.
  • a physical property caused by the thin film having a crystal structure derived from fibrils generated by stretching is not a property caused by the porous structure itself consisting of so-called nodes and fibrils, but a physical property caused by the thin film having a crystal structure derived from fibrils generated by stretching.
  • One possible reason for this is that, within the fibrils having a fiber shape with a high aspect ratio, the straight chains of the fluororesin molecules are more effectively stretched linearly along the fibril extension direction.
  • a thin film 120 is formed directly on a thin film 110, and another thin film 110 is formed directly on the thin film 120.
  • the substrate 100 includes a three-layered thin film stack structure in which a thin film 120 is formed between two thin films 110.
  • another thin film 120 may be formed directly on the other thin film 110.
  • the substrate 100 may have a four-layered thin film stack structure of a thin film 110, a thin film 120, a thin film 110, and a thin film 120.
  • the substrate 100 includes at least one, and preferably both, of the thin films 110 and 120.
  • the substrate 100 has a structure in which three layers made of thin films, namely, thin film 110, thin film 120, and thin film 110, are laminated in this order.
  • the substrate 100 has such a thin film laminate structure that is symmetrical in the thickness direction, so that warping of the substrate and the wiring board can be suppressed.
  • “Symmetrical in the thickness direction” means that, when the intersections of a virtual line (dashed line indicated by A in the figure) perpendicular to the substrate surface and the substrate surface at any position on the substrate surface are P1 and P2, respectively, and the midpoint between P1 and P2 is P3, the types and lamination order of the multiple thin films constituting P1 to P3 are the same as the types and lamination order of the multiple thin films constituting P2 to P3.
  • the types and lamination order of the multiple thin films constituting P1 to P3 and P2 to P3 are both thin film 110-thin film 120.
  • Thin film stacking structures symmetrical in the thickness direction are not limited to the above, and although not shown, for example, the thin film stacking structures from P1 to P3 and from P2 to P3 may both be thin film 110-thin film 120-thin film 110, or thin film 110-other thin film-thin film 120.
  • Examples of other thin films include thin films that differ from both thin film 110 and thin film 120 in at least one of the composition, thickness, anisotropy, and small CTE direction.
  • the substrate may be symmetrical in the thickness direction over substantially the entire substrate surface. Furthermore, it is preferable that the thin film stacked structures P1 to P3 and P2 to P3 are substantially equal in thickness of each thin film in addition to the types of thin films that compose them and their stacking order.
  • the substrate 100 may be linearly symmetrical above and below a virtual straight line (not shown) that is parallel to the substrate surface and passes through the midpoint P3 in a cross-sectional view, or may have a structure that is plane-symmetrical above and below a plane that includes the midpoint P3.
  • the thickness of the thin film 120 is greater than the thickness of each thin film 110, and the total thickness of the thin films 110 is formed to be approximately equal to the thickness of the thin film 120.
  • the total thickness of the thin films 110 may be 70% to 130% or 90% to 110% of the thickness of the thin film 120.
  • the thin films 110 and 120 have similar anisotropy of linear expansion coefficients.
  • the ratio CTE S /CTE L of the thin films 110 may be 70% to 130% or 90% to 110% of the ratio CTE S /CTE L of the thin film 120.
  • the difference CTE L -CTE S of the thin films 110 may be 70% to 130% or 90% to 110% of the difference CTE L -CTE S of the thin films 120.
  • the thickness of the thin film including the intersection point P1 and/or intersection point P2 on the surface of the substrate 100 may be configured to be smaller than the thickness of the thin film including the midpoint P3.
  • the multiple thin films constituting the substrate include a first group of thin films consisting of multiple thin films having a common small CTE direction, and another group of thin films consisting of multiple thin films having in common another small CTE direction that intersects with the small CTE direction of the first group of thin films, the total thin film thickness of the former group of thin films may be approximately equal to the total thin film thickness of the latter group of thin films.
  • the thickness and CTE of the substrate can be easily controlled.
  • the anisotropy of the linear expansion coefficient in the substrate surface direction and the thickness of the thin film constituting the substrate the anisotropy of the linear expansion coefficient of the substrate can be suppressed even when different thin films are combined.
  • each molecule of a polymer is like a nano-sized string.
  • the irregular amorphous parts of the polymer are bent and random, with no directionality, and the regularly folded crystalline parts are also arranged irregularly within the polymer structure, with no directionality, making it a completely uniform medium for light.
  • the refractive index for light polarized in the direction of orientation differs from the refractive index for light polarized perpendicular to the direction of orientation.
  • the refractive index in the direction of orientation is large, and the refractive index in the perpendicular direction is small. As a result, a difference in refractive index is observed between the thin film 110 and the thin film 120 whose orientation directions cross each other.
  • Thin films 110 and 120 having the same chemical composition may be considered to have the same thermal properties.
  • thin films 110 and 120 may have peaks with the largest areas at substantially the same position (temperature), or may have the top two peaks in terms of area at substantially the same position (temperature).
  • FIGS. 4A and 4B are schematic diagrams of a wiring board 200 having a dielectric layer formed of the base material 100 according to an embodiment of the present invention.
  • Fig. 4A is a schematic diagram of the wiring board 200 as viewed from a direction perpendicular to the board surface
  • Fig. 4B is a schematic diagram of the wiring board 200 as viewed from a cross-sectional direction of the wiring board.
  • the wiring board 200 includes a plurality of conductor patterns.
  • the plurality of conductor patterns include at least one of pads 210, wiring 220, vias 230, antenna pads 240, and a ground plane 250. Other electronic components are electrically connected to the pads 210.
  • the vias 230 form electrical connections including the thickness direction of the wiring board (Z direction in the figure). In particular, they form electrical connections between the conductor patterns formed on the upper surface of the dielectric layer and the conductor patterns formed on the lower surface of the dielectric layer.
  • the wiring board 200 includes wiring 220, and an electrical signal having a frequency of, for example, 50 GHz or higher is transmitted via this wiring 220.
  • the width of the wiring may be 1 ⁇ m to 100 ⁇ m, or 10 ⁇ m to 30 ⁇ m, and the thickness of the wiring may be 1 ⁇ m to 40 ⁇ m, or 7 ⁇ m to 25 ⁇ m.
  • the wiring board 200 includes a base material 100, and the above-mentioned multiple conductor patterns are formed on the upper surface and/or lower surface of the base material 100.
  • the wiring board 200 including the base material 100 shown in Fig. 3 as a dielectric layer is exemplified, but the base material 100 according to other embodiments of the present invention shown in Fig. 1 or 2 may be used as a dielectric layer.
  • the wiring board 200 may further include a protective layer (not shown) made of an insulating material and formed on the plurality of conductor patterns.
  • the wiring board 200 includes a dielectric layer made of a base material 100.
  • the dielectric layer functions as a base for forming conductor layers on its upper and/or lower surfaces, and also functions as a support material that supports the conductor layers and the multiple conductor patterns in each conductor layer so that they are electrically independent from each other.
  • deterioration of electrical properties due to other composite materials is significantly suppressed, so that the wiring board 200 can fully utilize the excellent electrical properties of the fluororesin. In particular, even signals with extremely high frequencies of 50 GHz or more can be transmitted with extremely low loss.
  • due to the linear expansion coefficient of the base material 100 being kept small, it is possible to provide a wiring board 200 having excellent physical properties in which deformation and warping due to temperature changes are greatly reduced.
  • the dielectric layer of the wiring board 200 does not contain a thermal expansion control material or contains only a small amount of the thermal expansion control material.
  • the dielectric layer between the wiring and the conductor plane may not contain a thermal expansion control material. It is particularly preferable that the dielectric layer between the wiring and the conductor plane is composed only of a thin film mainly composed of a fluororesin.
  • the area ratio of the thermal expansion control material in the dielectric layer between the high-frequency signal transmission wiring and the conductor plane may be 10% or less, or 1% or less.
  • wiring board 200 does not need to include a reinforcing layer containing 30% by weight or more of a thermal expansion control material.
  • the value obtained by dividing CTE D1 by CTE D2 (hereinafter referred to as the ratio CTE D1 /CTE D2 ) is 0.5 or more and 2 or less.
  • the ratio CTE D1 /CTE D2 is preferably 0.7 or more and 1.3 or less, and particularly preferably 0.8 or more and 1.2 or less.
  • the D1 direction of the wiring substrate 200 may be parallel to the small CTE direction (or large CTE direction) of the thin film 110
  • the D2 direction of the wiring substrate 200 may be parallel to the large CTE direction (or small CTE direction) of the thin film 110.
  • Unsintered PTFE fine powder and an auxiliary are mixed to prepare a paste consisting of resin particles.
  • Commercially available PTFE fine powder can be used, but in order to control the thin film to have a predetermined thermal expansion characteristic, it is preferable to select a PTFE fine powder with a small average particle size.
  • a preferred average particle size is 250 ⁇ m or more and 900 ⁇ m or less.
  • the apparent density of the PTFE fine powder is, for example, 0.3 g/ml or more and 0.8 g/m or less.
  • the auxiliary may be a commercially available product, for example, a petroleum-based solvent having an initial boiling point (IBP) of 150° C. or higher and 250° C. or lower.
  • IBP initial boiling point
  • the prepared paste is compression molded to form a preform.
  • the subsequent extrusion process and other processes are carried out at a temperature lower than the initial boiling point of the auxiliary, for example, at room temperature, to prevent the auxiliary from volatilizing.
  • the preform is extruded through a die while applying pressure to form a film-like sheet having a longitudinal direction.
  • the width and thickness of the sheet are controlled by the extrusion conditions, particularly the shape of the die.
  • continuous processing may be applied while the sheet is flowed in the longitudinal direction of the sheet.
  • MD Machine Direction
  • TD Transverse Direction
  • a high process temperature may reduce the degree of orientation by bringing at least some of the molecules closer to an amorphous state again. Therefore, it is advisable to understand and/or control the molecular orientation and/or linear expansion coefficient of the sheet before stretching. By stretching the sheet with such controlled orientation and/or linear expansion coefficient under conditions adjusted so that the thin film has the desired thermal expansion characteristics, a thin film suitable for the substrate of the present invention can be obtained.
  • the stretching conditions under which a thin film can have predetermined thermal expansion properties can be determined by actually stretching a sheet prepared under controlled conditions under various stretching conditions, measuring the linear expansion coefficient of the resulting thin film, and selecting suitable stretching conditions.
  • the stretching conditions may be determined after previously examining various conditions in the sheet forming process and optimizing them as necessary. In this manner, thin films can be prepared with controlled and/or managed linear expansion coefficients.
  • the lamination method is not limited to the above, and may be continuously laminated in the form of roll to roll.
  • First, at least one long MD stretched thin film is prepared in which the molecules are oriented in the MD such that the MD is the main stretching direction, and at least one long TD stretched thin film is prepared in which the molecules are oriented in the TD such that the TD ...MD stretched thin film is prepared in which the molecules are oriented in the TD such that the TD is the small CTE direction.
  • the MD stretched thin film can be formed, for example, by making the take-up speed of the receiving roll faster than the delivery speed of the supply roll.
  • the TD stretched thin film can be formed, for example, by applying a TD tensile stress to the sheet in the process of sending it from the supply roll to the receiving roll, thereby widening the sheet. Next, these thin films are stacked together while flowing them in the MD, thereby obtaining a long laminate in which the MD-stretched thin film and the TD-stretched thin film are stacked in such a way that the anisotropic directions of their respective linear expansion coefficients intersect.
  • the anisotropy of the linear expansion coefficient of the MD stretched thin film may be smaller than that of the TD stretched thin film, i.e., the ratio CTE S /CTE L of the MD stretched thin film may be closer to 1 than the ratio CTE S /CTE L of the TD stretched thin film, thereby making it possible to obtain a wide, long thin film laminate that is advantageous in terms of production efficiency when multiple wiring boards are produced.
  • the thin film laminate obtained as described above may be further compressed.
  • a thin film laminate in which multiple thin films are simply laminated may have insufficient adhesive strength between the thin films as is.
  • the compression step the laminate is compressed in the thickness direction to strengthen the bonding between the thin films.
  • the compression may be performed, for example, by sandwiching the thin film laminate in a press to apply pressure, or by passing the thin film laminate between one or more pairs of rolls to apply pressure continuously.
  • the temperature during compression may be, for example, 40° C. or higher and 340° C. or lower.
  • the pressure during compression is adjusted appropriately based on the thickness and density of the substrate to be obtained.
  • the pressure is, for example, in the range of 5 MPa to 400 MPa.
  • a substrate is prepared, and a conductor pattern is formed on the substrate surface by a known method.
  • the conductor pattern is preferably formed by a subtractive method in which a copper film formed on the substrate surface in advance is etched away except for the area to be left as the conductor pattern.
  • An additive method may be applied in which a conductor layer is piled up by plating or the like only in the area to be the conductor pattern.
  • a photolithography technique using a resist containing a photosensitive resin can be applied to define the etching area and the plating area.
  • the weight per unit area was used as a means of grasping the amount of resin. Measurements were performed at room temperature, with no tensile stress being applied to the thin film, thin film laminate, or substrate to be measured, by pressing a punch with a specified inner diameter against the thin film, thin film laminate, or substrate to cut out a test piece. The weight (g) of the cut-out test piece was then measured and divided by the area calculated from the specified inner diameter to calculate the weight per unit area (g/ m2 ). Furthermore, the volume of the test piece can be calculated by measuring the thickness of the test piece with a micrometer, etc. The density of the thin film can be calculated from the measured weight and the calculated volume.
  • Example 2 A thin film was prepared in the same manner as in Example 1, except that POLYFLON F-121 (product name) manufactured by Daikin Industries, Ltd. was used as the PTFE fine powder.
  • the obtained thin film had a linear expansion coefficient CTE s in the small CTE direction of -36 ppm/°C, and a linear expansion coefficient CTE L in the large CTE direction perpendicular thereto of 139 ppm/°C, i.e., a ratio CTE S /CTE L of -0.26 and a difference CTE L -CTE S of 175 ppm/°C, making it an anisotropic thin film.
  • a substrate was prepared under the same conditions as in Example 1.
  • the linear expansion coefficient CTE D1 in the D1 direction of the substrate obtained by compression was 52 ppm/°C
  • the linear expansion coefficient CTE D2 in the substrate D2 direction perpendicular to the D1 direction was 58 ppm/°C.
  • Example 4 A thin film 4-1 was prepared in which the direction in which the sheet or thin film was flowed, ie, the MD, was adjusted to be the small CTE direction, and a thin film 4-2 was prepared in which the TD was adjusted to be the small CTE direction.
  • the area density of the thin film 4-1 was 10 g/ m2
  • the linear expansion coefficient CTE S in the small CTE direction was ⁇ 30 ppm/° C.
  • the linear expansion coefficient CTE L in the large CTE direction perpendicular thereto was 133 ppm/° C.
  • the thin film 4-1 has anisotropy with a ratio CTE S /CTE L of ⁇ 0.23 and a difference CTE L -CTE S of 163 ppm/° C.
  • the area density of the thin film 4-2 was 26 g/ m2
  • the linear expansion coefficient CTE S in the small CTE direction was -30 ppm/°C
  • the linear expansion coefficient CTE L in the large CTE direction perpendicular thereto was 134 ppm/°C.
  • the thin film 4-2 has anisotropy with a ratio CTE S /CTE L of -0.22 and a difference CTE L -CTE S of 164 ppm/°C.
  • the linear expansion coefficient CTE D1 in the D1 direction of the substrate obtained by compression with a roll device was 39 ppm/°C
  • the linear expansion coefficient CTE D2 in the D2 direction perpendicular to the D1 direction was 20 ppm/°C. Even when a roll-to-roll process was used from extrusion to compression, it was confirmed that a fluororesin substrate in which thermal expansion was suppressed in both the D1 direction and the direction perpendicular thereto (D2 direction) could be stably obtained, as in the other Examples.
  • a method for producing a substrate which includes setting the linear expansion coefficient of a thin film to a predetermined anisotropy during stretching, comprises the steps of: 1.
  • a method for manufacturing a substrate comprising: preparing a sheet of a fluororesin; rolling the sheet; stretching the rolled sheet to form a thin film; and laminating the thin film to form a substrate,
  • the method for manufacturing a substrate, wherein forming the thin film includes stretching the thin film so that the thin film has a predetermined anisotropy of linear expansion coefficient, and laminating the plurality of thin films includes stacking the thin films so that the directions of the anisotropy of the predetermined linear expansion coefficient of the thin films intersect.
  • the predetermined anisotropy of the linear expansion coefficient may be determined so that a substrate formed by laminating the thin film has a required linear expansion coefficient.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
PCT/JP2023/046501 2022-12-28 2023-12-25 基材、及びその製造方法、並びにそれを用いた配線基板 WO2024143298A1 (ja)

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CN202380089706.7A CN120435387A (zh) 2022-12-28 2023-12-25 基材及其制造方法以及使用该基材的布线基板
JP2024567819A JPWO2024143298A1 (enrdf_load_stackoverflow) 2022-12-28 2023-12-25

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JP2022211414 2022-12-28

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148780A (ja) * 1994-11-16 1996-06-07 Nippon Pillar Packing Co Ltd フッ素樹脂多層プリント配線板用積層板および多層回路基板
JP2003200534A (ja) * 2001-10-24 2003-07-15 Du Pont Mitsui Fluorochem Co Ltd フッ素樹脂積層体及びその製造方法
JP2003338670A (ja) * 2002-05-22 2003-11-28 Tomoegawa Paper Co Ltd フッ素樹脂プリント配線板及びその製造方法
WO2021194810A1 (en) * 2020-03-27 2021-09-30 Rogers Corporation Flexible dielectric material comprising a biaxially-oriented polytetrafluoroethylene reinforcing layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148780A (ja) * 1994-11-16 1996-06-07 Nippon Pillar Packing Co Ltd フッ素樹脂多層プリント配線板用積層板および多層回路基板
JP2003200534A (ja) * 2001-10-24 2003-07-15 Du Pont Mitsui Fluorochem Co Ltd フッ素樹脂積層体及びその製造方法
JP2003338670A (ja) * 2002-05-22 2003-11-28 Tomoegawa Paper Co Ltd フッ素樹脂プリント配線板及びその製造方法
WO2021194810A1 (en) * 2020-03-27 2021-09-30 Rogers Corporation Flexible dielectric material comprising a biaxially-oriented polytetrafluoroethylene reinforcing layer

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