WO2024142947A1 - 重合基板、基板処理方法及び基板処理システム - Google Patents

重合基板、基板処理方法及び基板処理システム Download PDF

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Publication number
WO2024142947A1
WO2024142947A1 PCT/JP2023/044736 JP2023044736W WO2024142947A1 WO 2024142947 A1 WO2024142947 A1 WO 2024142947A1 JP 2023044736 W JP2023044736 W JP 2023044736W WO 2024142947 A1 WO2024142947 A1 WO 2024142947A1
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WO
WIPO (PCT)
Prior art keywords
substrate
film
adhesion
forming
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/044736
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English (en)
French (fr)
Japanese (ja)
Inventor
陽平 山下
洋介 中村
亮太 荒川
和宏 柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020257024444A priority Critical patent/KR20250129030A/ko
Priority to CN202380086060.7A priority patent/CN120303773A/zh
Priority to JP2024567458A priority patent/JPWO2024142947A1/ja
Publication of WO2024142947A1 publication Critical patent/WO2024142947A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • This disclosure relates to a polymerized substrate, a substrate processing method, and a substrate processing system.
  • Patent Document 1 discloses that in a laminated wafer in which a first wafer and a second wafer are bonded together, the peripheral portion of the first wafer is removed, i.e., so-called edge trimming is performed.
  • a laser absorption layer is formed at the interface between the first wafer and the device layer.
  • a laser light is irradiated onto the laser absorption layer to form an unbonded region, and the peripheral portion of the first wafer is removed.
  • the technology disclosed herein appropriately removes the peripheral edge of a first substrate in a polymerized substrate in which a first substrate and a second substrate are bonded together.
  • FIG. 2 is a side view showing an outline of a configuration of an overlapping wafer.
  • FIG. 2 is a partially enlarged view showing the outline of a configuration of an overlapping wafer.
  • 1 is a plan view showing an outline of the configuration of a wafer processing system;
  • 11 is an explanatory diagram showing a state in which a reduced adhesion region is formed at the interface between the film for forming a reduced adhesion region and the first wafer;
  • FIG. 11 is an explanatory diagram showing a state in which a peripheral modified layer is formed inside a first wafer.
  • FIG. FIG. 13 is an explanatory diagram showing a state in which a peripheral portion of the first wafer has been removed.
  • a laser absorption layer is formed at the interface between the first wafer and the device layer, but the device layer including the laser absorption layer is not formed in the peeling region where the peripheral portion is peeled off, and a bonding film for bonding to the second wafer may be formed on the surface of the first wafer.
  • This bonding film is a film that is bonded to the bonding film of the second wafer, and is not a film provided for the purpose of peeling off the peripheral portion, so there are cases where a peeling surface cannot be properly formed at the interface between the first wafer and the bonding film.
  • the first wafer W is a semiconductor wafer such as a silicon substrate, and has a device layer D, a film P for forming an adhesion reduction region, and a first bonding film Fw formed on the surface Wa side.
  • the device layer D is formed on the surface Wa and has an approximately circular shape in a planar view.
  • the film P for forming an adhesion reduction region is formed on the surface Wa radially outside the device layer D and has an approximately annular shape in a planar view.
  • the first bonding film Fw is laminated on the device layer D and the film P for forming an adhesion reduction region.
  • the interface between the device layer D and the first bonding film Fw and the interface between the film P for forming an adhesion reduction region and the first bonding film Fw may be formed to be at the same height.
  • the thickness of the film P for forming an adhesion reduction region may be adjusted based on the relationship between the laser light yield of the film P for forming an adhesion reduction region and the peeling of the first wafer W and the film P for forming an adhesion reduction region.
  • the thickness of the film P for forming the adhesion reduction region is, for example, 100 nm to 500 nm
  • the thickness of the first bonding film Fw is, for example, 200 nm to 1600 nm.
  • the device layer D includes a plurality of devices.
  • the adhesion reduction region forming film P absorbs the laser light irradiated by the adhesion reduction region forming device 50 described later.
  • a film having a smaller adhesion force to the first wafer W than to the first bonding film Fw such as an oxide film (SiO 2 film), is used. That is, the interface between the adhesion reduction region forming film P and the first wafer W is more likely to peel off than the interface between the adhesion reduction region forming film P and the first bonding film Fw.
  • the first bonding film Fw for example, an oxide film (THOX film, SiO 2 film, TEOS film), a SiC film, a SiCN film, or an adhesive is used.
  • the adhesion reduction region forming film P and the first bonding film Fw are made of different materials, and the compositions of the adhesion reduction region forming film P and the first bonding film Fw are controlled so that the adhesion force to the first wafer W has the above-mentioned relationship.
  • the second wafer S is also a semiconductor wafer such as a silicon substrate, and a second bonding film Fs is formed on the surface Sa.
  • the material of the second bonding film Fs is the same as that of the first bonding film Fw, and may be, for example, an oxide film (THOX film, SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive.
  • the second wafer S in this embodiment is a support wafer that supports the first wafer W, but may also be a device wafer. In this case, a device layer is formed on the surface Sa of the second wafer S.
  • the loading/unloading station 2 is provided with a FOUP mounting table 10 on which a FOUP F capable of accommodating multiple polymerized wafers T is mounted.
  • a wafer transport device 20 is provided adjacent to the FOUP mounting table 10 on the positive X-axis side of the FOUP mounting table 10.
  • the wafer transport device 20 moves on a transport path 21 extending in the Y-axis direction, and is configured to be able to transport polymerized wafers T between the FOUP F on the FOUP mounting table 10 and a transition device 30 described below.
  • a wafer transport device 40 a reduced adhesion area forming device 50 as a reduced adhesion area forming section, an internal modification device 60 as an internal modification section, an edge removal device 70 as an edge removal section, and a cleaning device 80 are arranged.
  • reduced adhesion refers to a state in which the adhesion is reduced at least compared to before the irradiation of the first laser beam, and includes peeling of the first wafer W and the adhesion reduction region forming film P.
  • the internal modification device 60 irradiates the inside of the first wafer W with a laser beam (second laser beam, for example, a YAG laser or a fiber laser) to form a peripheral modification layer M (see FIG. 5 below) that serves as a starting point for peeling off the peripheral portion We.
  • the internal modification device 60 also has a control device 61, which will be described later.
  • the above-described wafer processing system 1 is provided with a control device 51, a control device 61, and a control device 90.
  • the control device 51 individually controls the operation of the reduced adhesion region forming device 50.
  • the control device 61 individually controls the operation of the internal reforming device 60.
  • the control device 90 is responsible for overall control of a series of wafer processing operations in the wafer processing system 1.
  • the storage medium may be temporary or non-temporary.
  • the processing unit may be a CPU (Central Processing Unit).
  • the storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof.
  • the communication interface may communicate between the reduced adhesion region forming device 50, the internal modification device 60, and the wafer processing system 1 via a communication line such as a LAN (Local Area Network).
  • LAN Local Area Network
  • the second laser light L2 is irradiated to a predetermined irradiation position inside the first wafer W to form a peripheral modified layer M.
  • This predetermined irradiation position is the inner circumferential edge of the peripheral portion We (starting point of edge trimming), and the peripheral modified layer M becomes the starting point when removing the peripheral portion We in the edge trimming described below.
  • the crack extends vertically from the lowermost peripheral modified layer M, but the crack may extend radially outward.
  • the lower end of the crack from the lowermost peripheral modified layer M extends to a position that reaches the inner circumferential edge of the film P for forming the adhesion reduction region.
  • the inner circumferential edge of the film P for forming the adhesion reduction region described above is formed at a position that matches the position of the lower end of the crack.
  • the edge of the first wafer W is removed, i.e., edge trimming is performed.
  • the bonding strength between the first bonding film Fw and the second bonding film Fs is low, so that an adhesion reduction region Rv is formed extending from the interface between the adhesion reduction region forming film P and the first wafer W toward the interface between the first bonding film Fw and the second bonding film Fs.
  • the edge We is separated from the center of the first wafer W (the radial inner side of the edge We) starting from the edge modification layer M, and is completely separated from the second wafer S starting from the adhesion reduction region R, Rv.
  • the cleaning device 80 one or both of the first wafer W and the second wafer S are cleaned after the peripheral portion We has been removed.
  • a cleaning laser light may be irradiated onto the first wafer W and the second wafer S to modify and remove the irradiated portion of the cleaning laser light, thereby removing (cleaning) particles and the like remaining on the first wafer W and the second wafer S.
  • the laminated wafer T which has been subjected to all the processes, is transported by the wafer transport device 40 to the transition device 30, and then transported by the wafer transport device 20 to the FOUP F on the FOUP mounting table 10. In this way, the series of wafer processing steps in the wafer processing system 1 is completed.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2023/044736 2022-12-26 2023-12-13 重合基板、基板処理方法及び基板処理システム Ceased WO2024142947A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020257024444A KR20250129030A (ko) 2022-12-26 2023-12-13 중합 기판, 기판 처리 방법 및 기판 처리 시스템
CN202380086060.7A CN120303773A (zh) 2022-12-26 2023-12-13 重合基板、基板处理方法以及基板处理系统
JP2024567458A JPWO2024142947A1 (https=) 2022-12-26 2023-12-13

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-208470 2022-12-26
JP2022208470 2022-12-26

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WO2024142947A1 true WO2024142947A1 (ja) 2024-07-04

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KR (1) KR20250129030A (https=)
CN (1) CN120303773A (https=)
TW (1) TW202430304A (https=)
WO (1) WO2024142947A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003174153A (ja) * 2001-07-16 2003-06-20 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法、および半導体装置
JP2015228483A (ja) * 2014-05-08 2015-12-17 東京応化工業株式会社 支持体分離方法
WO2021192854A1 (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2021199585A1 (ja) * 2020-04-02 2021-10-07 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2022153895A1 (ja) * 2021-01-15 2022-07-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2022210262A1 (ja) * 2021-03-31 2022-10-06 日産化学株式会社 積層体、剥離剤組成物及び加工された半導体基板の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003174153A (ja) * 2001-07-16 2003-06-20 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法、および半導体装置
JP2015228483A (ja) * 2014-05-08 2015-12-17 東京応化工業株式会社 支持体分離方法
WO2021192854A1 (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2021199585A1 (ja) * 2020-04-02 2021-10-07 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2022153895A1 (ja) * 2021-01-15 2022-07-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2022210262A1 (ja) * 2021-03-31 2022-10-06 日産化学株式会社 積層体、剥離剤組成物及び加工された半導体基板の製造方法

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JPWO2024142947A1 (https=) 2024-07-04
CN120303773A (zh) 2025-07-11
KR20250129030A (ko) 2025-08-28

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