WO2024106338A1 - Composition de liquide de polissage - Google Patents

Composition de liquide de polissage Download PDF

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Publication number
WO2024106338A1
WO2024106338A1 PCT/JP2023/040571 JP2023040571W WO2024106338A1 WO 2024106338 A1 WO2024106338 A1 WO 2024106338A1 JP 2023040571 W JP2023040571 W JP 2023040571W WO 2024106338 A1 WO2024106338 A1 WO 2024106338A1
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Prior art keywords
polishing
less
substrate
silica particles
component
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PCT/JP2023/040571
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English (en)
Japanese (ja)
Inventor
坂本俊介
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花王株式会社
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Publication of WO2024106338A1 publication Critical patent/WO2024106338A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers

Definitions

  • This disclosure relates to a polishing composition, a method for manufacturing a magnetic disk substrate, and a method for polishing a substrate.
  • magnetic disk drives have become smaller and have larger capacities, and there is a demand for higher recording density.
  • it is necessary to reduce the unit recording area and improve the detection sensitivity of the weakened magnetic signal.
  • technological development is being carried out to lower the flying height of the magnetic head.
  • magnetic disk substrates are strictly required to improve smoothness and flatness (reduced surface roughness, waviness, and edge sagging) and reduce surface defects (reduced residual abrasive grains, scratches, protrusions, pits, etc.).
  • a multi-stage polishing method having two or more polishing steps is often adopted in the manufacturing method of magnetic disk substrates.
  • an abrasive containing colloidal silica particles is used, and from the viewpoint of improving productivity, a polishing liquid composition containing alumina particles as abrasive particles is used.
  • alumina particles when alumina particles are used as abrasive particles, the alumina particles may penetrate the substrate, causing defects in the magnetic disk substrate or in a magnetic disk having a magnetic layer applied to the magnetic disk substrate.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2017-19978 (Patent Document 1) and Japanese Patent Application Laid-Open No. 2021-175774 (Patent Document 2) propose polishing liquid compositions that do not contain alumina particles but contain silica particles as abrasive grains.
  • the present disclosure relates to a polishing liquid composition that contains silica particles and an aqueous medium, the silica particles having an ignition loss of 2% or less on a dry weight basis, and the silica particles having a particle diameter D90 of 65 nm or less, where D90 is the particle diameter at which the cumulative frequency from the small particle diameter side is 90% in a particle size distribution calculated by weight conversion obtained by centrifugal sedimentation.
  • the present disclosure relates to a method for manufacturing a magnetic disk substrate, which includes a polishing step of polishing a substrate to be polished using the polishing liquid composition of the present disclosure.
  • the present disclosure relates to a method for polishing a substrate, comprising polishing a substrate to be polished with the polishing liquid composition of the present disclosure, the substrate to be polished being a substrate used in the manufacture of magnetic disk substrates.
  • the present disclosure relates to a method for reducing residual silica on a substrate after polishing, the method comprising polishing the substrate to be polished with the polishing liquid composition of the present disclosure.
  • the present disclosure relates to a method for manufacturing a magnetic disk substrate, comprising the steps of selecting silica particles as abrasive grains having an ignition loss of 2% or less on a dry weight basis and a D90 of 65 nm or less, where D90 is the particle diameter at which the cumulative frequency from the small particle size side is 90% in a particle size distribution calculated by weight conversion obtained by centrifugal sedimentation, and polishing a substrate to be polished using a polishing liquid composition containing the silica particles and an aqueous medium.
  • silica particles remaining on the substrate surface after polishing (hereinafter also referred to as "silica residue”) are one of the causes of drive failure.
  • silica residues that cannot be detected by a scanning electron microscope (SEM) after finish polishing are one of the causes of drive failure.
  • silica residue is a general term for silica particles remaining on the substrate to be polished, and can be expressed as the number of particles per unit area.
  • silica residue includes silica particles that are simply in contact with the substrate, silica particles that are electrostatically bonded to the substrate, and silica particles that are partially embedded in the substrate.
  • the present disclosure provides a polishing composition that can reduce residual silica and scratches on the substrate surface after polishing.
  • the present disclosure provides a polishing composition that can reduce residual silica and scratches on the substrate surface after polishing.
  • silica particles (silica residues) remaining on the substrate surface after polishing are time-consuming to measure, and are rarely recognized as an item for evaluating the quality of the substrate surface after polishing, and have not been recognized as a cause of drive failure.
  • the "silica residues" that were considered a problem in the prior art are physical defects such as being embedded in scratches or being pierced, and are relatively easily detectable by model testing using simple cleaning or by using an electron microscope, and therefore have different problems and effects from the "silica residues" in this disclosure.
  • Patent Document 1 since heat-treated silica, which generally has a high surface hardness, is used, there is a problem that the substrate surface tends to have many dent defects and punctures.
  • Patent Document 2 a high polishing rate and excellent substrate surface quality are both achieved, but a further improvement in the polishing rate is desired in terms of improving substrate productivity.
  • Patent Documents 1 and 2 do not address the issue of reducing residual silica.
  • SEM scanning electron microscope
  • ICP-MS inductively coupled plasma mass spectrometry
  • the present disclosure is based in one aspect on the discovery that the amount of residual silica, which is undetectable by scanning electron microscopy (SEM) and detected by inductively coupled plasma mass spectrometry (ICP-MS), correlates with the loss on ignition of silica particles having a given particle size distribution.
  • SEM scanning electron microscopy
  • ICP-MS inductively coupled plasma mass spectrometry
  • the present disclosure relates to a polishing liquid composition (hereinafter also referred to as the "polishing liquid composition of the present disclosure”) that contains silica particles and an aqueous medium, the silica particles having an ignition loss of 2% or less on a dry weight basis, and the silica particles having a particle diameter D90 of 65 nm or less, where D90 is the particle diameter at which the cumulative frequency from the small particle diameter side is 90% in a particle size distribution in weight conversion obtained by centrifugal sedimentation.
  • a polishing liquid composition (hereinafter also referred to as the "polishing liquid composition of the present disclosure”) that contains silica particles and an aqueous medium, the silica particles having an ignition loss of 2% or less on a dry weight basis, and the silica particles having a particle diameter D90 of 65 nm or less, where D90 is the particle diameter at which the cumulative frequency from the small particle diameter side is 90% in a particle size distribution in weight conversion obtained by centrifugal sedimentation.
  • the mechanism by which the effects of the present disclosure are manifested is not clear, but is speculated as follows.
  • D90 means the ratio of large diameter particles. Large diameter particles have a large force to transmit the polishing load to the substrate to be polished, so they are more likely to remain on the substrate.
  • D90 reduces the polishing speed, resulting in a trade-off relationship.
  • another factor in the residual silica is the hydrogen bond between the silanol group of the silica particle and the substrate surface.
  • the amount of residual silica shows only a weak correlation with the "silanol group density" of the silica particle compared to the ignition loss of the silica particle. It is believed that a further mechanism is involved in the correlation between the amount of residual silica and the ignition loss.
  • the silanol group density is generally determined by titration, and only the silanol groups on the outermost surface are detected.
  • the ignition loss detects all silanol groups, including those inside the particles.
  • a high load is applied to the particles during polishing, and it is believed that some particles collapse and the internal silanol groups are exposed.
  • the silica residue refers to the amount of silica residue detected by inductively coupled plasma mass spectrometry (ICP-MS). Specifically, it can be evaluated by the method described in the Examples. In one or more embodiments, the silica residue refers to the amount of silica residue detected by inductively coupled plasma mass spectrometry (ICP-MS) that is at a level that cannot be detected by scanning electron microscope (SEM).
  • scratches on the substrate surface can be detected, for example, by an optical defect inspection device and can be quantitatively evaluated as the number of scratches. The number of scratches can be specifically evaluated by the method described in the Examples.
  • the polishing liquid composition of the present disclosure contains silica particles A (hereinafter also referred to as "component A”) as abrasive grains.
  • the silica particles A (component A) are silica particles having an ignition loss of 2% or less on a dry weight basis, and a D90 of 65 nm or less when the particle size D90 is the particle size at which the cumulative frequency from the small particle size side is 90% in the particle size distribution in weight conversion obtained by centrifugal sedimentation.
  • the use form of component A is preferably a slurry-like polishing liquid component.
  • Component A may be used alone or in combination of two or more types.
  • the particle diameter D10 of component A measured by centrifugal sedimentation in terms of weight is preferably 5 nm or more, more preferably 10 nm or more, and even more preferably 11 nm or more, from the viewpoint of improving the polishing rate, and is preferably 35 nm or less, more preferably 25 nm or less, and even more preferably 14 nm or less, from the viewpoint of improving the substrate surface quality. More specifically, the particle diameter D10 of component A measured by centrifugal sedimentation is preferably 5 nm or more and 35 nm or less, more preferably 10 nm or more and 25 nm or less, and even more preferably 11 nm or more and 14 nm or less.
  • the particle diameter D50 of component A measured by centrifugal sedimentation in terms of weight is preferably 10 nm or more, more preferably 15 nm or more, and even more preferably 17 nm or more, from the viewpoint of improving the polishing rate, and is preferably 40 nm or less, more preferably 30 nm or less, and even more preferably 20 nm or less, from the viewpoint of improving the substrate surface quality. More specifically, the particle diameter D50 of component A measured by centrifugal sedimentation is preferably 10 nm or more and 40 nm or less, more preferably 15 nm or more and 30 nm or less, and even more preferably 17 nm or more and 20 nm or less.
  • the particle diameter D90 of component A measured by centrifugal sedimentation in terms of weight is 65 nm or less, preferably 60 nm or less, more preferably 55 nm or less, and even more preferably 52 nm or less, from the viewpoint of reducing scratches, and is preferably 30 nm or more, more preferably 35 nm or more, and even more preferably 39 nm or more or 40 nm or more, from the viewpoint of improving the polishing rate.
  • the particle diameter D90 of component A measured by centrifugal sedimentation is preferably 30 nm or more and 60 nm or less, more preferably 35 nm or more and 55 nm or less, and even more preferably 39 nm or more and 52 nm or less, or 40 nm or more and 52 nm or less.
  • the centrifugal sedimentation method in one or more embodiments, is a method of classifying and detecting particles by size based on the difference in sedimentation velocity (disk centrifugal sedimentation light transmission method).
  • the particle size distribution by centrifugal sedimentation method can be measured, for example, using a disc centrifugal particle size distribution measuring device (CPS Disc Centrifuge).
  • CPS Disc Centrifuge a disc centrifugal particle size distribution measuring device
  • the particle size distribution by centrifugal sedimentation method is sometimes referred to as the "particle size distribution by CPS measurement.” Specifically, it can be calculated by the measurement method described in the examples.
  • Methods for adjusting the particle size distribution of component A by centrifugal sedimentation include, for example, adjusting the particle growth time, particle temperature, particle concentration, etc. during the growth process of the silica particles.
  • Other embodiments of methods for adjusting the particle size distribution of component A by centrifugal sedimentation include, for example, a method of giving a desired particle size distribution by adding new core particles during the particle growth process in the manufacturing stage, and a method of mixing two or more types of silica particles with different particle size distributions to give a desired particle size distribution.
  • the average secondary particle diameter of component A is preferably 1 nm or more, more preferably 5 nm or more, and even more preferably 10 nm or more, and from the same viewpoint, it is preferably 500 nm or less, more preferably 300 nm or less, even more preferably 100 nm or less, even more preferably 70 nm or less, even more preferably 40 nm or less, and even more preferably less than 40 nm.
  • the average secondary particle diameter of component A is preferably 1 nm or more and 500 nm or less, more preferably 1 nm or more and 300 nm or less, even more preferably 1 nm or more and 100 nm or less, even more preferably 5 nm or more and 70 nm or less, even more preferably 10 nm or more and 40 nm or less, and even more preferably 10 nm or more and less than 40 nm.
  • the average secondary particle diameter of component A refers to the average particle diameter based on the scattering intensity distribution measured by dynamic light scattering.
  • scattering intensity distribution refers to the volumetric particle size distribution of particles of submicron or less obtained by dynamic light scattering (DLS) or quasielastic light scattering (QLS).
  • DLS dynamic light scattering
  • QLS quasielastic light scattering
  • the ignition loss of component A on a dry weight basis is 2% or less, preferably 1.9% or less, more preferably 1.6% or less, and even more preferably 1.5% or less, from the viewpoint of reducing residual silica, and is preferably 0% or more, more preferably 0.5% or more, and even more preferably 1.0% or more, from the viewpoint of storage stability. More specifically, the ignition loss of component A on a dry weight basis is preferably 0% or more and 1.9% or less, more preferably 0.5% or more and 1.6% or less, and even more preferably 1.0% or more and 1.5% or less.
  • the ignition loss on a dry weight basis of component A is, in one or more embodiments, a sample is prepared by mixing component A with water to form a silica slurry, drying the mixture at a constant temperature between 105°C and 180°C, leaving the mixture to stand and return to room temperature, and then drying the mixture at a constant temperature between 105°C and 180°C.
  • Methods for adjusting the ignition loss of component A include, for example, adjusting the dropping speed, reaction temperature, and concentration of the silicic acid liquid during the growth process of the silica particles.
  • Other embodiments of the method for adjusting the ignition loss of component A include, for example, a method for adjusting the desired ignition loss by subjecting existing silica particles to heat treatment, metal modification of surface silanol groups, organic acid modification, and silane coupling treatment, and a method for mixing two or more types of silica particles with different ignition losses to give the desired ignition loss.
  • an index showing a stronger correlation with the residual silica than the "loss on ignition” is "the value represented by the following formula (I) when the loss on ignition based on the dry weight of component A is WL".
  • the value represented by the following formula (I) when the loss on ignition based on the dry weight of component A is WL is preferably 5 or less, more preferably 2.5 or less, and even more preferably 2 or less, and from the viewpoint of maintaining the polishing rate and storage stability, it is preferably 0 or more, more preferably 0.1 or more, and even more preferably 0.5 or more.
  • the value represented by the following formula (I) is preferably 0 or more and 5 or less, more preferably 0.1 or more and 2.5 or less, and even more preferably 0.5 or more and 2 or less.
  • ⁇ (WL) 3 x D90 ⁇ /100 (I) By setting the value represented by the above formula (I) to a predetermined value or less, it is possible to achieve both a high effect of reducing residual silica and a good removal rate.
  • component A examples include colloidal silica, precipitated silica, fumed silica, pulverized silica, and surface-modified silica thereof. From the viewpoints of improving the polishing rate and easy availability, component A is preferably at least one selected from colloidal silica and precipitated silica, and from the viewpoints of improving the polishing rate and improving the quality of the substrate, such as reducing scratches, colloidal silica, which is less likely to have a sharp surface shape or a localized high surface hardness portion, is more preferable.
  • the colloidal silica may be obtained, for example, by a method of particle growth using an aqueous solution of alkali silicate as a raw material (hereinafter also referred to as the "water glass method"), or by a method of condensation of a hydrolyzate of an alkoxysilane (hereinafter also referred to as the "sol-gel method”), and from the viewpoint of ease of production and economic efficiency, the silica obtained by the water glass method is preferred.
  • Silica particles obtained by the water glass method and the sol-gel method can be produced by a conventionally known method.
  • the precipitated silica is silica particles obtained by a precipitation method.
  • Examples of methods for producing precipitated silica particles include known methods such as those described in Tosoh Research and Technology Report, Vol. 45 (2001), pp. 65-69.
  • Specific examples of methods for producing precipitated silica particles include a precipitation method in which silica particles are precipitated by a neutralization reaction between a silicate such as sodium silicate and a mineral acid such as sulfuric acid.
  • the neutralization reaction is preferably carried out under alkaline conditions at a relatively high temperature, whereby the growth of primary silica particles proceeds quickly, and the primary particles are aggregated and precipitated in the form of flocks, which are preferably further pulverized to obtain precipitated silica particles.
  • the shape of component A may be a so-called spherical shape and/or a so-called cocoon shape, from the viewpoints of improving the removal rate and reducing scratches.
  • spherical silica is preferably used as component A.
  • the average aspect ratio of component A is preferably 1.00 or more, more preferably 1.02 or more, from the viewpoint of improving the polishing rate, and is preferably 1.20 or less, more preferably 1.1 or less, and even more preferably 1.06 or less, from the viewpoint of reducing scratches. More specifically, the average aspect ratio of component A is preferably 1.00 or more and 1.20 or less, more preferably 1.02 or more and 1.1 or less, and even more preferably 1.02 or more and 1.06 or less.
  • the content of component A in the polishing composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, and even more preferably 1.5% by mass or more, from the viewpoint of improving the polishing rate and reducing scratches, and is preferably 30% by mass or less, more preferably 20% by mass or less, even more preferably 15% by mass or less, and even more preferably 10% by mass or less, from the viewpoint of economy.
  • the content of component A in the polishing composition of the present disclosure is preferably 0.1% by mass or more and 30% by mass or less, more preferably 0.5% by mass or more and 20% by mass or less, even more preferably 1% by mass or more and 15% by mass or less, and even more preferably 1.5% by mass or more and 10% by mass or less.
  • component A consists of two or more types of silica particles
  • the content of component A refers to the total content thereof.
  • the aqueous medium contained in the polishing liquid composition of the present disclosure includes water such as distilled water, ion-exchanged water, pure water, and ultrapure water, or a mixed solvent of water and a solvent.
  • the above-mentioned solvent includes a solvent that can be mixed with water (e.g., alcohol such as ethanol).
  • the aqueous medium is a mixed solvent of water and a solvent, the ratio of water to the entire mixed medium is not particularly limited as long as the effect of the present disclosure is not hindered. From the viewpoint of economic efficiency, for example, 95% by mass or more is preferable, 98% by mass or more is more preferable, and substantially 100% by mass is even more preferable.
  • the content of the aqueous medium in the polishing liquid composition of the present disclosure can be the remainder excluding component A and the optional components described below (component B, component C, component D, and other components) that are blended as necessary.
  • the polishing composition of the present disclosure may contain an acid (hereinafter also referred to as "Component B") from the viewpoint of further improving the polishing rate and further reducing scratches.
  • an acid includes the use of an acid and/or a salt thereof.
  • Component B may be one type or a combination of two or more types.
  • component B examples include inorganic acids such as nitric acid, sulfuric acid, sulfurous acid, persulfuric acid, hydrochloric acid, perchloric acid, phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid, polyphosphoric acid, and amidosulfuric acid; organic acids such as organic phosphoric acid and organic phosphonic acid; and the like.
  • component B is preferably at least one selected from phosphoric acid, sulfuric acid, and 1-hydroxyethylidene-1,1-diphosphonic acid, more preferably at least one selected from sulfuric acid and phosphoric acid, and even more preferably phosphoric acid.
  • salts of these acids include salts of the above acids and at least one selected from metals, ammonia, and alkylamines.
  • Specific examples of the above metals include metals belonging to Groups 1 to 11 of the periodic table. Among them, from the viewpoint of further improving the polishing rate and further reducing scratches, salts of the above acids and metals belonging to Group 1 or ammonia are preferred.
  • the content of component B in the polishing composition of the present disclosure is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, even more preferably 0.05% by mass or more, even more preferably 0.1% by mass or more, from the viewpoint of further improving the polishing rate and further reducing scratches, and from the same viewpoint, it is preferably 5% by mass or less, more preferably 4% by mass or less, even more preferably 3% by mass or less, and even more preferably 2.5% by mass or less.
  • the content of component B in the polishing composition of the present disclosure is preferably 0.001% by mass or more and 5% by mass or less, more preferably 0.01% by mass or more and 4% by mass or less, even more preferably 0.05% by mass or more and 3% by mass or less, and even more preferably 0.1% by mass or more and 2.5% by mass or less.
  • component B is a combination of two or more types, the content of component B refers to the total content thereof.
  • the polishing composition of the present disclosure may contain an oxidizing agent (hereinafter also referred to as "Component C") from the viewpoint of further improving the polishing rate and further reducing scratches.
  • Component C may be one type or a combination of two or more types. From the same viewpoint, examples of component C include peroxides, permanganic acid or its salts, chromic acid or its salts, peroxoacids or its salts, oxyacids or its salts, nitric acids, sulfuric acids, etc.
  • component C is preferably at least one selected from hydrogen peroxide, iron(III) nitrate, peracetic acid, ammonium peroxodisulfate, iron(III) sulfate, and ammonium iron(III) sulfate, and hydrogen peroxide is more preferable from the viewpoints of increasing the polishing rate, preventing metal ions from adhering to the surface of the substrate to be polished, and ease of availability.
  • the content of component C in the polishing liquid composition of the present disclosure is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, and even more preferably 0.1 mass% or more, from the viewpoint of further improving the polishing rate, and is preferably 4 mass% or less, more preferably 2 mass% or less, and even more preferably 1.5 mass% or less, from the viewpoint of further improving the polishing rate and further reducing scratches. More specifically, the content of component C in the polishing liquid composition of the present disclosure is preferably 0.01 mass% or more and 4 mass% or less, more preferably 0.05 mass% or more and 2 mass% or less, and even more preferably 0.1 mass% or more and 1.5 mass% or less.
  • component C is a combination of two or more types, the content of component C refers to the total content thereof.
  • the polishing liquid composition of the present disclosure may further contain a nitrogen-containing compound (hereinafter also referred to as "component D") from the viewpoint of improving the polishing rate without significantly increasing the silica residue.
  • component D is an organic amine compound having 10 or less nitrogen atoms in the molecule.
  • component D is preferably one or more compounds having any of primary to tertiary amino groups.
  • component D may have a hydroxyl group from the viewpoint of workability taking into account odor and/or boiling point.
  • Component D may be one type or a combination of two or more types.
  • the number of nitrogen atoms in the molecule of component D is preferably 10 or less, more preferably 5 or less, even more preferably 4 or less, and even more preferably 2 or less, from the viewpoint of improving the polishing speed without significantly increasing the amount of silica remaining.
  • Component D may be at least one compound selected from an aliphatic amine compound having 10 or less nitrogen atoms in the molecule and an alicyclic amine compound having 10 or less nitrogen atoms in the molecule.
  • examples of the aliphatic amine compound include at least one selected from monoethanolamine, ethylenediamine, N,N,N',N'-tetramethylethylenediamine, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, hexamethylenediamine, 3-(diethylamino)propylamine, 3-(dibutylamino)propylamine, 3-(methylamino)propylamine, 3-(dimethylamino)propylamine, N-aminoethylethanolamine, N-(2-aminoethyl)diethanolamine, N-aminoethylisopropanolamine, N-aminoethyl-N-methylethanolamine, diethylenetriamine, triethylenetetramine, and tetraethylenepentamine.
  • examples of the alicyclic amine compound include at least one selected from piperazine, 2-methylpiperazine, 2,5-dimethylpiperazine, 1-amino-4-methylpiperazine, N-methylpiperazine, 1-(2-aminoethyl)piperazine, hydroxyethylpiperazine, and piperazine-1,4-bisethanol, and among these, hydroxyethylpiperazine (HEP) is preferred.
  • the molecular weight of component D is preferably 60 or more and 500 or less, more preferably 60 or more and 300 or less, even more preferably 60 or more and 150 or less, and even more preferably 60 or more and 135 or less, from the viewpoint of improving the polishing rate without significantly increasing the amount of silica remaining.
  • the content of component D in the polishing liquid composition of the present disclosure is preferably 0.001 mass% or more, more preferably 0.01 mass% or more, and even more preferably 0.05 mass% or more, from the viewpoint of improving the polishing rate without significantly increasing the amount of silica remaining, and from the same viewpoint, it is preferably 10 mass% or less, more preferably 5 mass% or less, and even more preferably 1 mass% or less. More specifically, the content of component D in the polishing liquid composition of the present disclosure is preferably 0.001 mass% or more and 10 mass% or less, more preferably 0.01 mass% or more and 5 mass% or less, and even more preferably 0.05 mass% or more and 1 mass% or less.
  • component D is a combination of two or more types, the content of component D refers to the total content thereof.
  • the mass ratio D/A of the content of component D to the content of component A in the polishing liquid composition of the present disclosure is preferably 0.00018 or more, more preferably 0.0018 or more, and even more preferably 0.0054 or more, from the viewpoint of improving the polishing rate without significantly increasing the amount of silica remaining, and from the same viewpoint, is preferably 0.18 or less, more preferably 0.09 or less, and even more preferably 0.054 or less. More specifically, the mass ratio D/A in the polishing liquid composition of the present disclosure is preferably 0.00018 or more and 0.18 or less, more preferably 0.0018 or more and 0.09 or less, and even more preferably 0.0054 or more and 0.054 or less.
  • the polishing liquid composition of the present disclosure may contain other components as necessary.
  • other components include corrosion inhibitors, thickeners, dispersants, rust inhibitors, basic substances, surfactants, water-soluble polymers, etc.
  • the other components are preferably contained in the polishing liquid composition within a range that does not impair the effects of the present disclosure.
  • the content of the other components in the polishing liquid composition of the present disclosure is preferably more than 0 mass%, more preferably 0.1 mass% or more, and preferably 10 mass% or less, and more preferably 5 mass% or less.
  • the content of the other components in the polishing liquid composition of the present disclosure is preferably more than 0 mass% and 10 mass% or less, more preferably 0.1 mass% or more and 10 mass% or less, and even more preferably 0.1 mass% or more and 5 mass% or less.
  • the polishing liquid composition of the present disclosure preferably does not substantially contain alumina abrasive grains.
  • substantially does not contain alumina abrasive grains may include, in one or more embodiments, not containing alumina particles, not containing an amount of alumina particles that functions as abrasive grains, or not containing an amount of alumina particles that affects the polishing result.
  • the content of alumina abrasive grains in the polishing liquid composition of the present disclosure is preferably 5% by mass or less, more preferably 2% by mass or less, even more preferably 1% by mass or less, even more preferably 0.1% by mass or less, even more preferably 0.05% by mass or less, even more preferably 0.02% by mass or less, and even more preferably substantially 0% by mass (i.e., not contained).
  • the content of alumina particles in the polishing liquid composition of the present disclosure is preferably 2% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, and even more preferably substantially 0% by mass (i.e., not contained), based on the total amount of abrasive grains in the polishing liquid composition.
  • the pH of the polishing composition of the present disclosure is preferably 0.5 or more, more preferably 0.7 or more, even more preferably 0.9 or more, and even more preferably 1 or more, from the viewpoint of improving the polishing rate and reducing scratches, and from the same viewpoint, it is preferably 9 or less, more preferably 6 or less, even more preferably 4 or less, even more preferably 3 or less, even more preferably 2.5 or less, and even more preferably 2 or less.
  • the pH of the polishing composition of the present disclosure is preferably 0.5 or more and 9 or less, more preferably 0.5 or more and 6 or less, even more preferably 0.7 or more and 4 or less, even more preferably 1 or more and 3 or less, even more preferably 1 or more and 2.5 or less, and even more preferably 1 or more and 2 or less.
  • the pH can be adjusted using the above-mentioned acid (component B) or a known pH adjuster.
  • the above pH is the pH of the polishing composition at 25 ° C., and can be measured using a pH meter, and is preferably the value 2 minutes after immersing the electrode of the pH meter in the polishing composition.
  • the polishing liquid composition of the present disclosure can be produced, for example, by blending component A, an aqueous medium, and optional components (component B, component C, component D, and other components) as necessary by a known method. Therefore, in one aspect, the present disclosure relates to a method for producing a polishing liquid composition, which includes a step of blending at least component A and an aqueous medium.
  • "blending" includes mixing component A, an aqueous medium, and optional components (component B, component C, component D, and other components) as necessary simultaneously or in any order.
  • the blending can be performed using a mixer such as a homomixer, a homogenizer, an ultrasonic disperser, and a wet ball mill.
  • the preferred blending amount of each component in the method for producing a silica slurry and a polishing liquid composition can be the same as the preferred content of each component in the polishing liquid composition according to the present disclosure described above.
  • the content of each component in the polishing liquid composition refers to the content of each component at the time of use, i.e., at the time when the polishing liquid composition begins to be used for polishing. In one or more embodiments, the content of each component in the polishing liquid composition in this disclosure can be considered to be the blending amount of each component.
  • the polishing composition of the present disclosure may be stored and supplied in a concentrated state to the extent that its storage stability is not impaired. This is preferable in that production and transportation costs can be further reduced.
  • the concentrated polishing composition of the present disclosure may be appropriately diluted with the above-mentioned water as necessary.
  • the dilution ratio is not particularly limited as long as the above-mentioned content (at the time of use) of each component can be secured after dilution, and may be, for example, 10 to 100 times.
  • the present disclosure relates to a polishing liquid kit for producing the polishing liquid composition of the present disclosure, the polishing liquid kit including a container-containing silica dispersion containing component A and an aqueous medium contained in a container (hereinafter also referred to as the "polishing liquid kit of the present disclosure").
  • the polishing liquid kit according to the present disclosure may further include an additive aqueous solution containing component B, and at least one selected from component C and component D, contained in a container separate from the container-containing silica dispersion.
  • a polishing liquid composition capable of reducing silica residue and scratches on the substrate surface after polishing can be obtained.
  • the polishing liquid kit of the present disclosure may be, for example, a polishing liquid kit (two-liquid type polishing liquid composition) that contains a silica dispersion (slurry) containing component A and an aqueous medium, and an additive aqueous solution containing components B, C, and D as necessary, in a mutually unmixed state, and that is mixed when used and diluted with an aqueous medium as necessary.
  • the aqueous medium contained in the silica dispersion may be the entire amount of the aqueous medium used to prepare the polishing liquid composition, or may be a part of it.
  • the silica dispersion and the additive aqueous solution may each contain the above-mentioned other components as necessary.
  • the substrate to be polished is a substrate used for manufacturing a magnetic disk substrate.
  • the surface of the substrate to be polished is polished with the polishing composition of the present disclosure, and then a magnetic layer is formed on the substrate surface by sputtering or the like, thereby manufacturing a magnetic disk substrate.
  • Materials of the substrate to be polished that are suitable for use in this disclosure include, for example, metals or semimetals such as silicon, aluminum, nickel, tungsten, copper, tantalum, and titanium, or alloys thereof; glassy materials such as glass, glassy carbon, and amorphous carbon; ceramic materials such as alumina, silicon dioxide, silicon nitride, tantalum nitride, and titanium carbide; and resins such as polyimide resins.
  • the substrate to be polished is suitable for use with metals such as aluminum, nickel, tungsten, and copper, and alloys containing these metals as the main components.
  • Ni-P plated aluminum alloy substrates and glass substrates such as crystallized glass, tempered glass, aluminosilicate glass, and aluminoborosilicate glass are more suitable, and Ni-P plated aluminum alloy substrates are even more suitable.
  • the term "Ni-P plated aluminum alloy substrate” refers to an aluminum alloy substrate whose surface has been ground and then electrolessly plated with Ni-P.
  • the shape of the substrate to be polished can be, for example, a disk-like, plate-like, slab-like, prism-like, or other shape with a flat surface, or a lens-like, or other shape with a curved surface, and a disk-like substrate is preferred.
  • the outer diameter is, for example, 2 to 100 mm
  • the thickness is, for example, 0.4 to 2 mm.
  • magnetic disks are manufactured by polishing a substrate that has undergone a grinding process, then polishing it through a rough polishing process and a finish polishing process, and then through a magnetic layer forming process.
  • the polishing composition of the present disclosure is preferably used for polishing in the finish polishing process.
  • the polishing composition of the present disclosure is a polishing composition for magnetic disk substrates.
  • the present disclosure relates to a method for reducing residual silica on a substrate after polishing, which comprises polishing a substrate to be polished with the polishing liquid composition of the present disclosure (hereinafter, also referred to as the "method for reducing residual silica of the present disclosure").
  • the substrate to be polished in the method for reducing residual silica of the present disclosure may be the above-mentioned substrate to be polished.
  • the method for reducing silica residue according to the present disclosure may further include selecting silica particles A (component A) contained in the polishing liquid composition according to the present disclosure.
  • the method for reducing silica residue of the present disclosure relates to a method for reducing silica residue, comprising selecting silica particles A (component A) and polishing a substrate to be polished using the polishing liquid composition of the present disclosure containing the selected silica particles A (component A).
  • the present disclosure relates to a method for reducing residual silica, comprising: selecting silica particles as abrasive grains, the ignition loss on a dry weight basis is 2% or less, and when the particle size D90 is the particle size at which the cumulative frequency from the small particle size side is 90% in the particle size distribution in weight conversion obtained by centrifugal sedimentation, the D90 is 65 nm or less; and polishing a substrate to be polished using a polishing liquid composition containing the silica particles and an aqueous medium.
  • the silica particles in the method for reducing residual silica of this aspect include the above-mentioned silica particles A (component A).
  • the polishing liquid composition in the method for reducing residual silica of this aspect includes the above-mentioned polishing liquid composition of the present disclosure.
  • the use of the polishing composition of the present disclosure can reduce silica residues and scratches on the substrate surface after polishing.
  • the specific polishing method and conditions can be the same as those of the substrate manufacturing method of the present disclosure described below.
  • the present disclosure relates to a method for polishing a substrate (hereinafter also referred to as the "polishing method of the present disclosure"), which comprises using the polishing liquid composition of the present disclosure to polish a substrate, and the substrate is a substrate used in the manufacture of a magnetic disk substrate.
  • the substrate to be polished in the polishing method of the present disclosure may be the substrate to be polished described above.
  • the polishing method of the present disclosure may be used, for example, in a finish polishing process. According to the polishing method of the present disclosure, by using the polishing composition of the present disclosure, the silica residue and scratches on the substrate surface after polishing can be reduced. Therefore, the productivity of the substrate (e.g., magnetic disk substrate) with improved substrate quality can be improved.
  • the specific polishing method and conditions can be the same as the substrate manufacturing method of the present disclosure described later.
  • the present disclosure relates to a method for producing a magnetic disk substrate (hereinafter also referred to as the "substrate production method of the present disclosure"), which includes a polishing step (hereinafter also referred to as the "polishing step") of polishing a substrate to be polished with the polishing liquid composition of the present disclosure.
  • the polishing step in the substrate production method of the present disclosure is, for example, a finish polishing step.
  • the substrate manufacturing method of the present disclosure may further include a step of selecting silica particles A (component A) contained in the polishing liquid composition of the present disclosure.
  • the substrate manufacturing method of the present disclosure relates to a method for manufacturing a magnetic disk substrate, which includes a step of selecting silica particles A (component A) and a step of polishing a substrate to be polished using the polishing liquid composition of the present disclosure containing the selected silica particles A (component A).
  • the present disclosure relates to a method for manufacturing a magnetic disk substrate, comprising the steps of selecting silica particles as abrasive grains, the ignition loss on a dry weight basis being 2% or less, and the particle diameter D90 being 65 nm or less, where D90 is the particle diameter where the cumulative frequency from the small particle diameter side is 90% in the particle size distribution in weight conversion obtained by centrifugal sedimentation, and polishing a substrate to be polished using a polishing liquid composition containing the silica particles and an aqueous medium.
  • the silica particles in the method for manufacturing a magnetic disk substrate of this aspect include the above-mentioned silica particles (component A).
  • the polishing liquid composition in the method for manufacturing a magnetic disk substrate of this aspect includes the above-mentioned polishing liquid composition of the present disclosure.
  • the polishing pad used in this disclosure is not particularly limited, and may be, for example, a suede type, a nonwoven fabric type, a polyurethane independent foam type, or a two-layer type laminated with these, with suede type polishing pads being preferred from the standpoint of polishing speed.
  • the polishing load in the polishing process using the polishing composition of the present disclosure is preferably 5.9 kPa or more, more preferably 6.9 kPa or more, and even more preferably 7.5 kPa or more, from the viewpoint of ensuring the polishing rate, and is preferably 20 kPa or less, more preferably 18 kPa or less, and even more preferably 16 kPa or less, from the viewpoint of reducing scratches.
  • polishing load refers to the pressure of the platen applied to the polishing surface of the substrate to be polished during polishing.
  • the polishing load can be adjusted by applying air pressure or a weight to at least one of the platen and the substrate to be polished.
  • the amount of polishing per 1 cm2 of the substrate to be polished is preferably 0.05 mg or more, more preferably 0.1 mg or more, and even more preferably 0.2 mg or more, from the viewpoints of improving the polishing rate and reducing scratches, and from the same viewpoint, it is preferably 2.5 mg or less, more preferably 2 mg or less, and even more preferably 1.6 mg or less. More specifically, the amount of polishing per 1 cm2 of the substrate to be polished is preferably 0.05 mg or more and 2.5 mg or less, more preferably 0.1 mg or more and 2 mg or less, and even more preferably 0.2 mg or more and 1.6 mg or less.
  • the supply rate of the polishing liquid composition of the present disclosure is, from the viewpoint of reducing scratches, preferably 0.05 mL/min or more and 15 mL/min or less, more preferably 0.06 mL/min or more and 10 mL/min or less, even more preferably 0.07 mL/min or more and 1 mL/min or less, and even more preferably 0.07 mL/min or more and 0.5 mL/min or less, per 1 cm2 of the substrate to be polished.
  • the polishing composition of the present disclosure can be supplied to the polishing machine, for example, by continuously supplying the composition using a pump or the like.
  • supplying the polishing composition to the polishing machine in addition to supplying it as a single liquid containing all the components, it can also be divided into multiple compounding component liquids and supplied as two or more liquids, taking into consideration the storage stability of the polishing composition.
  • the multiple compounding component liquids are mixed, for example, in the supply pipe or on the substrate to be polished, to produce the polishing composition of the present disclosure.
  • the polishing composition disclosed herein by using the polishing composition disclosed herein, it is possible to reduce residual silica and scratches on the substrate surface after polishing. As a result, substrates (e.g., magnetic disk substrates) with improved substrate quality can be efficiently manufactured.
  • the present disclosure relates to silica particles having an ignition loss of 2% or less on a dry weight basis, and a particle diameter D90 of 65 nm or less when the particle diameter D90 is the particle diameter at which the cumulative frequency from the small particle diameter side is 90% in the particle size distribution in weight conversion obtained by centrifugal sedimentation (hereinafter, the silica particles having the ignition loss and the D90 are also referred to as the "silica particles of the present disclosure").
  • the silica particles of the present disclosure can be suitably used as abrasive grains for polishing magnetic disk substrates.
  • the silica particles of the present disclosure are the above-mentioned component A.
  • the ignition loss of the silica particles of the present disclosure based on dry weight is preferably 1.9% or less, more preferably 1.6% or less, even more preferably 1.5% or less from the viewpoint of reducing residual silica when the silica particles of the present disclosure are used as abrasive grains for polishing magnetic disk substrates, and from the viewpoint of storage stability, it is preferably 0% or more, more preferably 0.5% or more, even more preferably 1.0% or more.
  • the ignition loss of component A based on dry weight is preferably 0% or more and 1.9% or less, more preferably 0.5% or more and 1.6% or less, even more preferably 1.0% or more and 1.5% or less.
  • the D90 of the silica particles of the present disclosure is preferably 60nm or less, more preferably 55nm or less, and even more preferably 52nm or less from the viewpoint of reducing scratches when the silica particles of the present disclosure are used as abrasive grains for polishing magnetic disk substrates, and is preferably 30nm or more, more preferably 35nm or more, and even more preferably 40nm or more from the viewpoint of improving polishing speed.
  • the D90 of the silica particles of the present disclosure is preferably 30nm or more and 60nm or less, more preferably 35nm or more and 55nm or less, and even more preferably 40nm or more and 52nm or less.
  • the value represented by the following formula (II) is preferably 5 or less, more preferably 2.5 or less, and even more preferably 2 or less from the viewpoint of reducing the residual silica when the silica particles of the present disclosure are used as abrasive grains for polishing magnetic disk substrates, and is preferably 0 or more, more preferably 0.1 or more, and even more preferably 0.5 or more from the viewpoint of maintaining the polishing rate and storage stability. More specifically, the value represented by the following formula (II) is preferably 0 or more and 5 or less, more preferably 0.1 or more and 2.5 or less, and even more preferably 0.5 or more and 2 or less.
  • the ignition loss on a dry weight basis of the silica particles of the present disclosure, the value represented by formula (II), and D90 are preferably the same as the value represented by formula (I) described for the silica particles (component A) contained in the polishing liquid composition of the present disclosure.
  • polishing compositions (Examples 1 to 4 and Comparative Examples 1 to 4) Silica particles (component A or non-component A), acid (component B), oxidizing agent (component C) and water were mixed to prepare the polishing liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 4 shown in Table 1.
  • the content (active content) of each component in the polishing liquid composition was 5.5 mass% for silica particles (component A or non-component A), 1.0 mass% for acid (component B), and 0.3 mass% for oxidizing agent (component C).
  • the content of water is the remainder excluding component A or non-component A, component B, and component C.
  • the polishing liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 4 do not contain alumina abrasive grains.
  • the silica particles used as the abrasive grains are colloidal silica produced by a water glass method.
  • the pH of the polishing liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 4 was 1.8.
  • Silica particles (component A), acid (component B), oxidizing agent (component C), nitrogen-containing compound (component D or non-component D) and water were mixed to prepare the polishing liquid compositions of Examples 5 to 15 and Reference Examples 1 to 3 shown in Table 1.
  • the content (active content) of each component in the polishing liquid composition was as follows: silica particles (component A): 5.5 mass %, acid (component B): 1.0 mass %, oxidizing agent (component C): 0.3 mass %, nitrogen-containing compound (component D or non-component D): 0.10 mass %.
  • the content of water is the remainder excluding components A, B, C, and D or non-component D.
  • the polishing liquid compositions of Examples 5 to 15 and Reference Examples 1 to 3 do not contain alumina abrasive grains.
  • the silica particles used as the abrasive grains were manufactured by the water glass method.
  • the pH of the polishing liquid compositions of Examples 5 to 15 and Reference Examples 1 to 3 was 1.8.
  • component A or non-component A, component B, component C, component D or non-component D were used as component A or non-component A, component B, component C, component D or non-component D for preparing the polishing composition.
  • Component A Preparation of Silica Particles A1 to A4
  • a metal silicate aqueous solution adjusted to pH 10-12 and silica concentration 2% 7 kg of an acidic silicic acid solution adjusted to a silica concentration of 5% is intermittently added dropwise over 1-24 hours to increase the particle size (build-up).
  • the silicic acid concentration, the reaction temperature, pressure, pH, etc. silica particles having silanol groups in a desired range can be obtained.
  • silica particles A1 to A4 were prepared.
  • Silica particles A1 spherical silica particles [colloidal silica (water glass method), aspect ratio 1.04, average secondary particle diameter 21 nm, ignition loss 1.10%]
  • Silica particles A2 spherical silica particles [colloidal silica (water glass method), aspect ratio 1.06, average secondary particle diameter 17 nm, ignition loss 1.11%]
  • Silica particles A3 spherical silica particles [colloidal silica (water glass method), aspect ratio 1.05, average secondary particle diameter 18 nm, ignition loss 1.17%]
  • Silica particles A4 spherical silica particles [colloidal silica (water glass method), aspect ratio 1.04, average secondary particle diameter 25 nm, ignition loss 1.58%]
  • Silica particles A5 non-spherical silica particles [colloidal silica (water glass method), aspect ratio 1.12, average secondary particle size 142 nm, ignition loss 4.13%, manufactured by JGC Catalysts and
  • the spherical silica particles (A1) and the spherical silica particles (A8) were mixed in a mass ratio of 50/50, dried, and observed under a TEM, and the average aspect ratio was calculated from the minor axis/major axis ratio in image analysis.
  • the silica particles were mixed with ion-exchanged water to prepare a 40% by mass silica slurry.
  • the spherical silica particles (A1) and the spherical silica particles (A8) were mixed in a mass ratio of 50/50.
  • pH Measurement The pH of the polishing composition was measured at 25° C. using a pH meter (manufactured by DKK-TOA Corporation), and the value measured 2 minutes after immersing the electrode in the polishing composition was recorded.
  • the substrate to be polished was an aluminum alloy substrate plated with Ni-P and roughly polished with a polishing composition containing silica abrasive grains.
  • the substrate to be polished had a thickness of 0.6 mm, an outer diameter of 97 mm, an inner diameter of 25 mm, and a center line average roughness Ra of 1 nm measured by an AFM (Digital Instrument NanoScope IIIa Multi Mode AFM).
  • the ratio of Ni to P in the Ni-P plating was 88:12 by mass.
  • Polishing machine double-sided polishing machine (9B type double-sided polishing machine, manufactured by SpeedFam) Number of substrates to be polished: 10 Polishing liquid: Polishing liquid composition Polishing pad: Suede type (foam layer: polyurethane elastomer, thickness 0.9 mm, average pore size 10 ⁇ m, manufactured by Fujibo Co., Ltd.) Rotation speed of the platen: 32.5 rpm Polishing load: 10.5 kPa (set value) Amount of polishing solution supplied: 100 mL/min. Supply rate per 1 cm2 of substrate to be polished: 0.076 mL/min. Amount polished per 1 cm2 of substrate to be polished: 0.23 mg Polishing time: 6 minutes
  • Examples 1 to 15 which use the specified silica particles, can reduce silica residue and scratches on the substrate surface after polishing, compared to Comparative Examples 1 to 4. It was also found that Examples 5 to 15, which contain the specified nitrogen-containing compound, can improve the polishing rate without significantly increasing the amount of silica residue, compared to Reference Examples 1 to 3, which do not contain the specified nitrogen-containing compound.
  • the present disclosure can reduce residual silica and scratches on the substrate surface after polishing, thereby improving the productivity of substrates with improved substrate quality.
  • the present disclosure can be suitably used in the manufacture of magnetic disk substrates.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

Selon un aspect de la présente divulgation, la divulgation concerne une composition de liquide de polissage capable de réduire les résidus de silice et les rayures sur une surface de substrat après polissage.　Selon un aspect, la présente divulgation concerne une composition de liquide de polissage qui contient des particules de silice et un milieu aqueux, les particules de silice ayant une perte d'allumage de 2 % ou moins sur une base de poids sec, et, lorsque D90 est le diamètre de particule auquel une fréquence cumulative à partir du côté de petit diamètre de particule est de 90 % dans une distribution de taille de particule en termes du poids obtenu par un procédé de sédimentation centrifuge, les particules de silice ayant un D90 de 65 nm ou moins.
PCT/JP2023/040571 2022-11-17 2023-11-10 Composition de liquide de polissage WO2024106338A1 (fr)

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Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2012178209A (ja) * 2011-01-31 2012-09-13 Kao Corp 磁気ディスク基板の製造方法
JP2015130219A (ja) * 2013-12-03 2015-07-16 花王株式会社 磁気ディスク基板の製造方法
WO2015115653A1 (fr) * 2014-01-31 2015-08-06 Hoya株式会社 Procédé de fabrication d'un substrat à utiliser pour un disque magnétique et procédé de fabrication d'un disque magnétique
JP2017019978A (ja) * 2015-07-15 2017-01-26 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板製造方法および磁気ディスク基板
JP2020128479A (ja) * 2019-02-08 2020-08-27 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
JP2020183329A (ja) * 2019-05-07 2020-11-12 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178209A (ja) * 2011-01-31 2012-09-13 Kao Corp 磁気ディスク基板の製造方法
JP2015130219A (ja) * 2013-12-03 2015-07-16 花王株式会社 磁気ディスク基板の製造方法
WO2015115653A1 (fr) * 2014-01-31 2015-08-06 Hoya株式会社 Procédé de fabrication d'un substrat à utiliser pour un disque magnétique et procédé de fabrication d'un disque magnétique
JP2017019978A (ja) * 2015-07-15 2017-01-26 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板製造方法および磁気ディスク基板
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JP2020183329A (ja) * 2019-05-07 2020-11-12 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

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