JP4640981B2 - 基板の製造方法 - Google Patents
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- JP4640981B2 JP4640981B2 JP2005340160A JP2005340160A JP4640981B2 JP 4640981 B2 JP4640981 B2 JP 4640981B2 JP 2005340160 A JP2005340160 A JP 2005340160A JP 2005340160 A JP2005340160 A JP 2005340160A JP 4640981 B2 JP4640981 B2 JP 4640981B2
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- 238000005498 polishing Methods 0.000 claims description 149
- 239000000203 mixture Substances 0.000 claims description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
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- 239000002253 acid Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 6
- 229910018104 Ni-P Inorganic materials 0.000 claims description 5
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- 239000010808 liquid waste Substances 0.000 claims 1
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- 239000004065 semiconductor Substances 0.000 description 9
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- 229910045601 alloy Inorganic materials 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
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- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
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- 235000019353 potassium silicate Nutrition 0.000 description 2
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
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- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
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- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
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- HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 description 1
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- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
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- 239000003112 inhibitor Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
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- 229910001414 potassium ion Inorganic materials 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 238000011179 visual inspection Methods 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
[1] コロイダルシリカと、酸又はその塩とを含有する研磨液組成物を基板又は研磨パッドに供給して該基板を研磨する工程を有する基板の製造方法であって、基板又は研磨パッドに供給される際の研磨液組成物中のアルミニウム濃度が50ppm以下である基板の製造方法、及び
[2] コロイダルシリカと、酸又はその塩とを含有する研磨液組成物を基板又は研磨パッドに供給して該基板を研磨する工程を有するナノスクラッチの低減方法であって、基板又は研磨パッドに供給される際の研磨液組成物中のアルミニウム濃度が50ppm以下であるナノスクラッチの低減方法
に関する。
珪酸塩法としては、珪酸塩を原料とし、縮合反応させシリカ粒子を生成させる方法(水ガラス法)等が挙げられる。
本発明においては、かかる珪酸塩法により製造されたコロイダルシリカを用いることで、従来のアルコキシシラン法で得られるコロイダルシリカや乾式法で得られるヒュームドシリカを使用する場合に比べて、ナノスクラッチを顕著に低減することができるという利点がある。
以下に記載するように、Al濃度の異なる研磨液組成物を調製し、該研磨液組成物を用いて被研磨物を研磨することにより、ナノスクラッチを評価した。
表1に示すコロイダルシリカスラリーA〜D、硫酸(和光純薬工業社製 特級)、硫酸アルミニウム(和光純薬工業社製 特級)及びイオン交換水を表2に示す組成となるように、10L容のポリエチレン製容器に添加・混合し、Al濃度の異なる研磨液組成物を得た。また、研磨液組成物を供給する際の配管には、タイゴン(登録商標)製のものを用いた。
被研磨物として、Ni−Pメッキされたアルミニウム基板を、アルミナ研磨材を含有する研磨液組成物であらかじめ粗研磨し、Raを1nmとした、厚さ1.27mmのアルミニウム合金基板(外周95mmφ、内周25mm)(以下、Ni−Pメッキした被研磨基板)を用いた。
・研磨試験機:スピードファム社製、両面9B研磨機
・研磨布:フジボウ社製、仕上げ研磨用パッド(厚さ0.9mm、開孔径30μm、ショアA硬度60°)
・定盤回転数:32.5r/min
・研磨液組成物供給量:100mL/min
・研磨時間:4分
・研磨荷重:7.8kPa
・投入した基板の枚数:10枚
・測定機器:VISION PSYTEC製、「MicroMax VMX−2100CSP」
・光源:2Sλ(250W)及び3Pλ(250W)共に100%
・チルト角:−6°
・倍率:最大(視野範囲:全面積の120分の1)
・観察領域:全面積(外周95mmφで内周25mmの基板)
・アイリス:notch
・評価:研磨試験機に投入した基板の中から、無作為に4枚を選択し、その4枚の基板の各々両面にあるナノスクラッチ数(本)の合計を8で除して、基板面当たりのナノスクラッチ数を算出した。
研磨液組成物及び基板又は研磨パッドへの供給直前で採取された研磨液組成物中のAl濃度は、研磨液組成物をフッ化水素酸、硝酸で溶解し、シリカ等のAl定量の妨害となる元素を除去した後、4重極型誘導結合プラズマ質量分析装置(ICP質量分析装置:セイコーインスツルメンツ(株)製、商品名:SPQ−8000)にて定量して求めた。
また、研磨液組成物中のコロイダルシリカに対するアルミニウムの含有量比が小さいと、ナノスクラッチが少なくなる傾向にあることがわかる。
また、研磨廃液のpHが低いと、ナノスクラッチが少なくなる傾向にあることがわかる。
Claims (2)
- 珪酸塩法により製造されたコロイダルシリカと、酸又はその塩とを含有する研磨液組成物をNi−Pメッキされたアルミニウム合金基板又は研磨パッドに供給して該基板を研磨する工程を有するナノスクラッチの低減方法であって、該基板又は研磨パッドに供給される際の研磨液組成物中のアルミニウム濃度が3〜50ppmであり、該研磨をする工程における研磨廃液のpHが1.2〜3である、ナノスクラッチの低減方法。
- Ni−Pメッキされたアルミニウム合金基板又は研磨パッドに供給される際の研磨液組成物中のコロイダルシリカに対するアルミニウムの含有量比(アルミニウム重量/コロイダルシリカ重量)が5/10000以下である、請求項1記載のナノスクラッチの低減方法。
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WO2023243611A1 (ja) * | 2022-06-15 | 2023-12-21 | 株式会社レゾナック | Cmp研磨液及び研磨方法 |
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JP2003218069A (ja) * | 2002-01-23 | 2003-07-31 | Fujimi Inc | 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物 |
WO2004048265A1 (ja) * | 2002-11-22 | 2004-06-10 | Nippon Aerosil Co., Ltd | 高濃度シリカスラリー |
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JP2003218069A (ja) * | 2002-01-23 | 2003-07-31 | Fujimi Inc | 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物 |
WO2004048265A1 (ja) * | 2002-11-22 | 2004-06-10 | Nippon Aerosil Co., Ltd | 高濃度シリカスラリー |
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