WO2024060263A1 - 显示面板、显示装置及拼接显示装置 - Google Patents

显示面板、显示装置及拼接显示装置 Download PDF

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Publication number
WO2024060263A1
WO2024060263A1 PCT/CN2022/121121 CN2022121121W WO2024060263A1 WO 2024060263 A1 WO2024060263 A1 WO 2024060263A1 CN 2022121121 W CN2022121121 W CN 2022121121W WO 2024060263 A1 WO2024060263 A1 WO 2024060263A1
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WIPO (PCT)
Prior art keywords
sub
gap
area
along
size
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PCT/CN2022/121121
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English (en)
French (fr)
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WO2024060263A9 (zh
Inventor
王莉莉
蒋红梅
刘超
翟明
齐琪
冯莎
王静
贾明明
Original Assignee
京东方科技集团股份有限公司
京东方晶芯科技有限公司
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Application filed by 京东方科技集团股份有限公司, 京东方晶芯科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN202280003286.1A priority Critical patent/CN118103899A/zh
Priority to PCT/CN2022/121121 priority patent/WO2024060263A1/zh
Priority to TW112115504A priority patent/TW202414369A/zh
Publication of WO2024060263A1 publication Critical patent/WO2024060263A1/zh
Publication of WO2024060263A9 publication Critical patent/WO2024060263A9/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/302—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel, a display device and a spliced display device.
  • Micro LED Micro Light Emitting Diode, Micro Light Emitting Diode
  • Mini LED Mini Light Emitting Diode Display, Mini Light Emitting Diode
  • a display panel comprising: a substrate, a driving circuit layer, a plurality of first binding electrodes, and a plurality of connecting leads.
  • the substrate comprises a first surface, a second surface, and a plurality of side surfaces connecting the first surface and the second surface, at least one of the plurality of side surfaces being a selected side surface.
  • the first surface of the substrate comprises a display area and a peripheral area located at least on one side of the display area, the peripheral area being closer to the selected side surface of the substrate than the display area.
  • the driving circuit layer is disposed in the display area.
  • a plurality of first binding electrodes are arranged at intervals along a first direction and are disposed in the peripheral area. The first direction is parallel to the selected side surface of the substrate and the first surface of the substrate.
  • the plurality of connecting leads are arranged at intervals along the first direction.
  • Each of the plurality of connection leads includes a first portion located on a side of the first surface of the substrate, a second portion located on a side of a selected side of the substrate, and a third portion located on a side of the second surface of the substrate.
  • a first portion of each connecting lead is electrically connected to a first binding electrode.
  • the first portions of two adjacent connecting leads are separated by a first gap, and the first gap includes a first type of gap area.
  • the first type of gap region includes a first sub-gap region and a second sub-gap region.
  • the first sub-gap region of each first-type gap region is closer to the substrate than the second sub-gap region of each first-type gap region. Select side.
  • the size of the first sub-gap region of each first type of gap region along the first direction is smaller than the size of the second sub-gap region of the first type of gap region along the first direction.
  • the size of the first sub-gap region of each first type gap region along the second direction is smaller than or equal to the size of the second sub-gap region of the first type gap region along the second direction.
  • the second direction is parallel to the extension direction of the first portion of the connecting lead.
  • the difference between the sizes of the first sub-gap region and the second sub-gap region of each first-type gap region along the first direction ranges from 0 to 100 ⁇ m.
  • first portions of any two adjacent connection leads in the plurality of connection leads are separated by a first type gap region.
  • the first gap further includes a second type of gap area, and the size of the second type of gap area along the first direction is equal to the size of the first sub-gap area of the first type of gap area along the first direction.
  • the gap regions of the first type alternate with at least one gap region of the second type.
  • the dividing line between the first sub-gap region and the second sub-gap region in each first-type gap region is closer to the plurality of first binding electrodes. The boundary of one end of the selected side of the substrate, closer to the selected side of the substrate.
  • a plurality of first binding electrodes are arranged side by side and spaced apart along the first direction.
  • the size of the first binding electrode along the first direction is less than or equal to the size along the first direction of the first portion of the connecting lead connected to the first binding electrode.
  • the size of the first type gap region along the first direction is less than or equal to the spacing along the first direction between two adjacent first binding electrodes.
  • the display panel further includes: a plurality of second binding electrodes.
  • a plurality of second binding electrodes are disposed on the second surface side of the substrate and are spaced apart along the first direction.
  • Each second bonding electrode includes a first sub-portion and a second sub-portion, the first sub-portion of each second bonding electrode being closer to the selected side of the substrate than the second sub-portion.
  • the third portion of each connecting lead is electrically connected to the first sub-portion of a second binding electrode.
  • the extending direction of the first sub-portion of the second binding electrode is the same as the extending direction of the third portion of the connecting lead electrically connected thereto.
  • the third portions of two adjacent connecting leads are separated by a third gap
  • the third gap includes a third type gap region
  • each of the plurality of third type gap regions includes a third sub-gap region and a fourth sub-gap region
  • the third sub-gap region of each third type gap region is closer to the selected side surface of the substrate than the fourth sub-gap region of the third type gap region
  • the size of the third sub-gap region of each third type gap region along the first direction is smaller than the size of the fourth sub-gap region of the third type gap region along the first direction.
  • third portions of any two adjacent connecting leads in the plurality of connecting leads are separated by a third type gap region.
  • the third gap further includes a fourth type of gap area, and the third type of gap area and at least one fourth type of gap area are alternately arranged.
  • the size of the fourth type of gap area along the first direction is equal to the size of the third sub-gap area of the third type of gap area along the first direction.
  • the dividing line between the third sub-gap region and the fourth sub-gap region in each third-type gap region is closer to the plurality of second binding electrodes. The boundary of one end of the selected side of the substrate, closer to the selected side.
  • a plurality of second binding electrodes are spaced apart along the first direction.
  • the size of the second binding electrode along the first direction is less than or equal to the size along the first direction of the third portion of the connecting lead connected to the second binding electrode.
  • the size of the third type gap region along the first direction is less than or equal to the spacing along the first direction of the first sub-portions of the two adjacent second binding electrodes.
  • a display device including: the display panel as described in any of the above embodiments.
  • a spliced display device including: a plurality of display devices as described in any of the above embodiments.
  • a method for preparing a display panel including:
  • Substrate is provided.
  • the substrate includes a first surface, a second surface and a plurality of side surfaces connecting the first surface and the second surface, and at least one side surface among the plurality of side surfaces is a selected side surface.
  • the first surface of the substrate includes a display area and a peripheral area located on at least one side of the display area, the peripheral area being closer to a selected side of the substrate than the display area.
  • An array layer is formed on the first surface side of the substrate.
  • forming the array layer on the first surface side of the substrate includes: forming a driving circuit layer in the display area.
  • a first mask is disposed on the first surface side of the substrate.
  • the first mask at least includes a first main body portion, and the first main body portion at least covers a portion of the driving circuit layer close to a selected side surface of the substrate.
  • a conductive layer is formed, wherein the conductive layer includes a first portion located on the first surface side of the substrate, a second portion located on the selected side of the substrate, and a third portion located on the second surface side of the substrate.
  • Laser is used to etch the patterned conductive layer to form multiple connecting leads arranged side by side at intervals.
  • Each of the plurality of connecting leads includes a first portion located on a first surface side of the substrate, a second portion located on a selected side side of the substrate, and a third portion located on a second surface side of the substrate.
  • Laser etching the conductive layer to form a plurality of connection leads includes: laser etching at least a second portion of the conductive layer to form a second portion of the plurality of connection leads.
  • forming the array layer on the first surface side of the substrate further includes: forming a plurality of first binding electrodes in the peripheral area. Wherein, a plurality of first binding electrodes are arranged at intervals along the first direction, and each first binding electrode extends along the second direction. The peripheral area extends along the first direction. The first direction intersects the second direction.
  • the first main body of the first mask further covers portions of the plurality of first binding electrodes close to the display area.
  • the first mask in the step of arranging the first mask on the first surface side of the substrate, further includes a plurality of first fingers.
  • the first ends of the plurality of first fingers are connected to the first main body, the second ends of the plurality of first fingers extend toward the selected side of the substrate, and the plurality of first fingers of the first mask are compared with the first A body portion is located closer to a selected side of the substrate.
  • Each first finger is located in a gap area between two adjacent first binding electrodes.
  • Figure 1A is a cross-sectional view of a display panel according to some embodiments.
  • Figure 1B is a cross-sectional view of a display panel according to other embodiments.
  • Figure 1C is a plan view of a driving circuit layer according to some embodiments.
  • Figure 1D is a cross-sectional structural view of a driving circuit layer according to some embodiments.
  • Figure 2 is a flow chart of a method of manufacturing a display panel according to some embodiments
  • 3 to 13 are step diagrams of a method of manufacturing a display panel according to some embodiments.
  • Figure 14 is a flow chart of a method of manufacturing a display panel according to other embodiments.
  • Figure 15 is a flowchart of a method of manufacturing a display panel according to further embodiments.
  • Figures 16 to 26 are step diagrams of a method of preparing a display panel according to other embodiments.
  • Figures 27 to 35 are flow charts of a method of manufacturing a display panel according to further embodiments.
  • Figure 36 is a schematic diagram of setting a first mask on the light-emitting device layer
  • Figure 37 is a schematic diagram of setting another first mask on the light-emitting device layer
  • Figure 38 is a cross-sectional view obtained based on section line GG in Figure 36;
  • Figure 39 is a cross-sectional view obtained based on the section line HH in Figure 36;
  • Figure 40 is a front structural view of a display panel according to some embodiments.
  • Figure 41 is a front structural view of a display panel according to other embodiments.
  • Figure 42 is a rear structural view of a display panel according to some embodiments.
  • Figure 43 is a rear structural view of a display panel according to other embodiments.
  • Figure 44 is a back and front structural view of a display panel according to some embodiments.
  • Figure 45 is a structural diagram of a display device according to some embodiments.
  • Figure 46 is a structural diagram of a splicing display device according to some embodiments.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and includes the following combinations of A, B and C: A only, B only, C only, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • parallel includes absolutely parallel and approximately parallel, and the acceptable deviation range of approximately parallel may be, for example, a deviation within 5°;
  • perpendicular includes absolutely vertical and approximately vertical, and the acceptable deviation range of approximately vertical may also be, for example, Deviation within 5°.
  • equal includes absolute equality and approximate equality, wherein the difference between the two that may be equal within the acceptable deviation range of approximately equal is less than or equal to 5% of either one, for example.
  • Example embodiments are described herein with reference to cross-sectional illustrations and/or plan views that are idealized illustrations.
  • the thickness of layers and the areas of regions are exaggerated for clarity. Accordingly, variations from the shapes in the drawings due, for example, to manufacturing techniques and/or tolerances are contemplated.
  • example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, an etched area shown as a rectangle will typically have curved features. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the actual shapes of regions of the device and are not intended to limit the scope of the exemplary embodiments.
  • a large-size display device can be assembled by splicing multiple small-size display devices.
  • the small-size display device includes a display panel.
  • the wiring located on the display surface side of the display panel can be connected to a circuit board (such as a flexible circuit board) provided on the non-display surface side of the display panel through connecting wires, so that in When multiple small-size display devices are spliced to form a larger large-size display device, the distance between adjacent small-size display devices can be smaller, thereby making the display of the large-size display device formed by splicing multiple small-size display devices Quality improves.
  • the display panel includes a substrate 11 , a plurality of first binding electrodes 12 and a plurality of connecting leads 13 .
  • the substrate 11 includes opposing first surfaces 11a and second surfaces 11b and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one side surface 11c of the plurality of side surfaces 11c of the substrate 11 is a selected side surface 11cc.
  • Each connecting lead 13 includes a first portion 131 located on the side of the first surface 11 a of the substrate 11 , a second portion 132 located on the side of the selected side 11 cc of the substrate 11 , and a third portion located on the side of the second surface 11 b of the substrate 11 . Part Three 133.
  • the light-emitting device layer G is provided on one side of the first surface 11a of the substrate 11, which is the front side of the display panel; correspondingly, the second surface 11b side of the substrate 11 is the back side of the display panel.
  • the first surface 11a of the substrate 11 includes a display area AA, and a film layer structure such as a driving circuit layer 14 is provided in the display area AA.
  • the first portion 131 and the third portion 133 of the connecting lead 13 both extend in a direction perpendicular to the selected side surface 11cc of the substrate 11 , such as the Y direction shown in FIGS. 1A and 1B .
  • the driving circuit layer 14 includes a buffer layer 141 , a first metal layer 142 , an insulating layer 143 , a second metal layer 144 , a planarization layer 145 and a passivation layer arranged in sequence from the substrate 11 .
  • Layer 146 the driving circuit layer 14 includes a buffer layer 141 , a first metal layer 142 , an insulating layer 143 , a second metal layer 144 , a planarization layer 145 and a passivation layer arranged in sequence from the substrate 11 .
  • Layer 146 is arranged in sequence from the substrate 11 .
  • the buffer layer 141 is provided on the first surface 11a side of the substrate 11.
  • the first metal layer 142 is disposed on the side of the buffer layer 141 away from the substrate 11 .
  • the first metal layer 142 includes a plurality of first signal lines 1421 .
  • the insulating layer 143 is disposed on the side of the first metal layer 142 away from the substrate 11 .
  • the second metal layer 144 is disposed on the side of the insulating layer 143 away from the substrate 11 .
  • the second metal layer 144 includes a plurality of first binding electrodes 12 and a plurality of second signal lines 1441 .
  • the flat layer 145 is disposed on the side of the second metal layer 144 away from the substrate 11 .
  • the passivation layer 146 is disposed on the side of the flat layer 145 away from the substrate 11 . It can be understood that the first bonding electrode 12 and the second signal line directly in contact with it are an integral structure, and the first bonding electrode is an area located in the peripheral area and exposed by the planarization layer 145 and the passivation layer 146 .
  • the first signal line 1421 includes a plurality of data lines Dm extending in the Y direction, a plurality of first positive signal lines Hm1, a plurality of second positive signal lines Hm2, a plurality of reference signal lines Vm and a plurality of scanning signal transfer lines Cn.
  • the second metal layer 144 includes a plurality of scanning signal lines Sn, and each scanning signal line Sn is electrically connected to a scanning signal switching line Cn.
  • the plurality of scanning signal lines Sn extend along the X direction.
  • each row The pixels are electrically connected to the same scanning signal line Sn, and each column of pixels is electrically connected to a data signal line Dm, a reference signal line Vm, a first positive signal line Hm1 and a second positive signal line Hm2 to achieve reasonable wiring.
  • Corresponding signals are transmitted to the pixels through multiple signal lines.
  • the second metal layer 144 further includes a plurality of connection pads, including a plurality of first pads 1442 for connecting the light emitting device G1 and a plurality of connection pads.
  • the pins of the light emitting device G1 and the pins of the pixel driving chip G2 are connected to the corresponding connection pads through a welding material S (e.g., solder, tin-silver-copper alloy, tin-copper alloy, etc.).
  • the flat layer 145 includes a plurality of second vias a2, and the plurality of second vias a2 penetrate to the second metal layer 144.
  • the passivation layer 146 includes a plurality of third vias a3, and the plurality of third vias a3 penetrate to the flat layer 145. Among them, one third via a3 and one second via a2 correspond in position, forming a through via that penetrates from the passivation layer 146 to the connection pad of the second metal layer 144.
  • each light-emitting device G1 includes two connection pins
  • each pixel driving chip G2 includes six connection pins
  • the pins of each light-emitting device G1 pass through the flat layer.
  • 145 and the passivation layer 146 are connected to the two first pads 1442
  • the pins of each pixel driving chip G2 are connected to the six second pads 1443 through the via holes through the planar layer 145 and the passivation layer 146. connected, thereby controlling the light emitting device G1 to emit light under the control of the signal transmitted by the signal line (the first signal line 1421 and/or the second signal line 1441) and the pixel driving chip G2.
  • any connection pad and the second signal line 1441 in direct contact with it are an integral structure, and the connection pad is an area of the second signal line 1441 exposed by the planarization layer 145 and the passivation layer 146 .
  • the boundary line B shown in the figures is the boundary line between the flat layer 145 and the passivation layer 146 close to the selected side 11cc of the substrate 11 .
  • the distance between the orthographic projection of the boundary line B of the flat layer 145 and the passivation layer 146 close to the selected side 11cc of the substrate 11 on the substrate 11 and the selected side 11cc of the substrate 11 is L1.
  • the plurality of first binding electrodes 12 are arranged side by side at intervals along the first direction X, and the boundaries of the plurality of first binding electrodes 12 close to the selected side 11cc of the substrate 11 are flush or substantially flush.
  • the distance between the orthographic projection of the boundary close to the selected side surface 11cc of the substrate 11 on the substrate 11 and the selected side surface 11cc of the substrate 11 is L2.
  • L1 is larger than L2, and the absolute value of the difference between L1 and L2 ranges from 50 to 80 ⁇ m.
  • the absolute value of the difference between L1 and L2 is, for example, 50 ⁇ m, 70 ⁇ m, or 80 ⁇ m.
  • the plurality of first binding electrodes 12 are located in the second metal layer 144 , and the widths (dimensions along the first direction X) of the plurality of first binding electrodes 12 are different, and each first binding electrode 12
  • the width of the fixed electrode 12 corresponds to the width of the signal line to which it is electrically connected, as shown in FIG. 1C , for example, the width of the second signal line 1441.
  • the width of the first binding electrode 12 to which signal lines of different widths are electrically connected is different.
  • the first metal layer 142 or the second metal layer 144 is a metal layer including multiple stacked structures.
  • the first metal layer 142 or the second metal layer 144 includes a titanium layer, a copper layer, and a titanium layer arranged in sequence from one side of the substrate 11 .
  • the first metal layer 142 or the second metal layer 144 includes, for example, a molybdenum layer, a copper layer, and a molybdenum layer that are sequentially provided from one side of the substrate 11 .
  • the first metal layer 142 or the second metal layer 144 includes, for example, a molybdenum layer, an aluminum layer, and a molybdenum layer sequentially provided from one side of the substrate 11 .
  • the first metal layer 142 or the second metal layer 144 is a signal wiring layer with a single-layer structure.
  • the driving circuit layer 14 is, for example, a copper layer or an aluminum layer.
  • the first metal layer 142 or the second metal layer 144 needs to have good electrical conductivity.
  • the description here is only an example and does not limit the material used in the driving circuit layer 14 .
  • each first binding electrode 12 of the plurality of first binding electrodes 12 is connected to a corresponding signal line in the driving circuit layer 14 (for example, a plurality of first signal lines 1421 and a plurality of second signal lines).
  • 1441 is an integrated structure, in which the first binding electrode 12 is located in the peripheral area AN and has an exposed surface.
  • an anti-oxidation layer may be further provided on the side of the first binding electrode 12 away from the substrate 11 (the material may include nickel metal, specifically a nickel-containing alloy, or a nickel layer and a gold layer) to prevent the film layer from being oxidized during the process and causing unreliable electrical connection between the first binding electrode 12 and the connecting lead 13 during the subsequent preparation process.
  • the first portion 131 of each connecting lead 13 is connected to a first signal line 1421 through a first binding electrode 12.
  • the size of the first binding electrode 12 along the first direction The size of the first signal line 1421 along the first direction X is adapted to the size of the first portion 131 of the connection lead 13 along the first direction X to the first binding electrode 12 to which it is connected.
  • the plurality of first signal lines 1421 with different functions included in the driving circuit layer 14 have different sizes in the first direction X. It can be understood that the plurality of first signal lines 1421 corresponding to the different functions are The size of the first binding electrode 12 along the first direction The dimensions of the first portion 131) of the lead 13 along the first direction X are different.
  • the dimensions of the plurality of first binding electrodes 12 along the first direction may be different.
  • the dimensions of the plurality of connecting leads 13 (or the first portions 131 of the connecting leads 13 ) along the first direction X may be the same or different.
  • the third portion 133 of the plurality of connecting leads 13 is configured to connect to a circuit board located on one side of the second surface 11 b of the substrate 11 , for example, the third portion 133 of the plurality of connecting leads 13
  • the end of 133 away from the selected side 11cc is used as a binding electrode for connecting to the flexible circuit board F. That is to say, the third part 133 of the multiple connecting leads 13 needs to reserve a larger position for external circuit binding.
  • the display panel further includes a plurality of second binding electrodes 19 .
  • One end of the plurality of second binding electrodes 19 is electrically connected to the connection lead, and the other end is configured to connect to the second surface 11 b of the substrate 11 . side of the circuit board.
  • the preparation process of the plurality of connecting leads 13 is as follows: forming an entire conductive layer connecting the first surface 11a and the second surface 11b of the substrate 11 on the selected side 11cc of the substrate 11, for example, through three-dimensional sputtering coating.
  • the process forms a conductive layer.
  • the conductive layer includes a first portion located on the first surface 11a side of the substrate 11, a second portion located on the selected side surface 11cc side of the substrate 11, and a second portion located on the second surface 11b side of the substrate 11.
  • the conductive layer is patterned through laser process trimming to form a plurality of independent connection leads 13 connecting the first surface 11 a and the second surface 11 b of the substrate 11 .
  • each connection lead 13 includes a first portion 131 located on one side of the first surface 11 a of the substrate 11 , a second portion 132 located on a selected side 11 cc of the substrate 11 and a second surface 11 b of the substrate 11 Part 3 of one side 133.
  • the size of the first portion 131 of the connecting lead 13 is smaller than the size of the film structure in the display area AA, that is, The thickness d2 of the first portion 131 of the connecting lead 13 is smaller than the thickness d1 of the film layer in the display area AA.
  • the laser may be incident from the selected side 11cc of the substrate 11 into the display area AA of the first surface 11a, resulting in Damage to the front film layer of the display panel.
  • the laser Laser2 irradiates the conductive layer in the direction shown in the figure. Since the first portions 131 of the connecting leads 13 are on the substrate, The thickness d2 on 11 is less than the thickness d1 of the film layer in the display area AA, so part of the energy of the laser will reach the display area AA and cause damage to the film layers and devices in this area, resulting in local corrosion, failure of the light-emitting device to light up, etc. question.
  • the connecting lead 13 is formed by laser irradiation and etching the conductive layer from three directions respectively.
  • laser Laser1 is a laser emitted from the first surface side of the display panel to the display panel
  • laser Laser2 is a laser emitted from the selected side side of the display panel to the display panel
  • laser Laser3 is a laser emitted from the second surface side of the display panel to the display panel.
  • a light-emitting device layer G is provided on the side of the driving circuit layer 14 away from the substrate 11 .
  • the light-emitting device layer G includes a plurality of light-emitting devices G1 .
  • the driving circuit layer 14 includes signal paths. The line is configured to transmit a signal to the light-emitting device G1 and drive the plurality of light-emitting devices G1 in the light-emitting device layer G to emit light.
  • the portion of the signal traces irradiated by the laser will be removed by laser etching or be damaged. , thus affecting the normal transmission of signals.
  • the characteristics of the light-emitting device G1 will change, so that the light-emitting effect of the light-emitting device G1 cannot achieve the expected effect.
  • the light-emitting device G1 cannot emit light normally or the brightness and color of the light-emitting device will change, thereby affecting the display. Effect.
  • the above-mentioned laser damages the front film layer of the display panel, including damaging the driving circuit layer 14 and the light-emitting device layer G.
  • embodiments of the present disclosure provide a display panel and a preparation method thereof to solve the above-mentioned problem of laser damage to the front film layer of the display panel.
  • the preparation of the display panel is first introduced. method.
  • the preparation method of the display panel includes:
  • the substrate 11 includes a first surface 11a, a second surface 11b, and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one of the plurality of side surfaces 11c One side is 11cc for the selected side.
  • the first surface 11a includes a display area AA and a peripheral area AN located on at least one side of the display area AA.
  • the peripheral area AN is closer to the selected side surface 11cc of the substrate 11 than the display area AA.
  • the material of the substrate 11 is, for example, rigid materials such as glass, quartz, and plastic.
  • the material of the substrate 11 is, for example, flexible materials such as FPC (Flexible Printed Circuit Board) and PI base film (Polyimide Film).
  • FPC Flexible Printed Circuit Board
  • PI base film Polyimide Film
  • forming the array layer on the first surface 11 a side of the substrate 11 includes forming the driving circuit layer 14 in the display area AA.
  • the first mask 20 at least includes a first main body part 201 , and the first main body part 201 at least covers the portion of the driving circuit layer 14 close to the selected side surface 11cc of the substrate 11 .
  • the conductive layer 13 ′ includes: a first part 13 ′ 1 located on the side of the first surface 11 a of the substrate 11 , and a second part 13 ′ located on the side of the selected side 11 cc of the substrate 11 . 2 and a third portion 13'3 located on the second surface 11b side of the substrate 11.
  • Figures 7 and 8 are cross-sectional views taken along section lines CC and DD in Figure 6 respectively. It can be seen that the first mask 20 and the conductive layer 13' are not in contact, and there is a certain distance between them.
  • the conductive layer 13' is formed by, for example, a three-dimensional sputtering coating process.
  • each of the plurality of connecting leads 13 includes a first portion 131 located on one side of the first surface 11a of the substrate 11, a second portion 132 located on one side of the selected side 11cc of the substrate 11, and a third portion 133 located on one side of the second surface 11b of the substrate 11.
  • Laser etching the conductive layer 13' to form a plurality of connection leads 13 includes: as shown in Figures 10 and 11, laser etching at least the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the multiple connection leads 13 .
  • the first portion 13'1 of the conductive layer 13' does not overlap with the first main body portion 201 of the first mask 20.
  • the plurality of connection leads 13 formed by laser etching the conductive layer 13' are independently separated, and there are gaps between any two of the plurality of connection leads 13.
  • the area corresponding to the part of the conductive layer 13' removed by laser etching during the laser etching process is called an etching area.
  • the third portion of the conductive layer 13' A portion 13'1 includes a plurality of first etching areas K1, a second portion 13'2 of the conductive layer 13' includes a plurality of second etching areas K2, and a third portion 13'3 of the conductive layer 13' includes a plurality of second etching areas K2.
  • the resulting distance between adjacent connection leads 13 is the gap between adjacent connection leads 13 .
  • 12A, 12B and 13 are schematic diagrams of the plurality of connecting leads 13 on the first surface 11a and the second surface 11b of the substrate 11 after the first mask 20 is removed.
  • the driving circuit layer 14 is formed in the display area AA of the first surface 11a, and then the first mask 20 is set on the first surface 11a side of the substrate 11, and the driving circuit layer 14 is close to the substrate 11
  • the selected sides of the 11cc section are cladded therein. In this way, during the process of laser etching to pattern the conductive layer 13', the laser Laser2 irradiates the conductive layer 13' in the direction shown in FIG.
  • the laser Laser2 illuminates the guide in the direction shown in Figure 11
  • the laser beam directed to the driving circuit layer 14 is blocked by the main body 201 of the first mask 20, which protects the driving circuit layer 14 and prevents the laser from causing damage to the driving circuit layer 14. This avoids the problem that part of the circuit configured to transmit circuit signals is removed or damaged by laser etching after the driving circuit layer 14 is irradiated by laser, thereby affecting the normal transmission of circuit signals, thereby improving the reliability of the display panel.
  • each first etching area K1 in the plurality of first etching areas K1 includes a first sub-etching area K11 and a second sub-etching area K12
  • each first etching area K1 includes a first etching area K11 and a second etching area K12 .
  • the first sub-etching area K11 of the etching area K1 is closer to the selected side surface 11cc of the substrate 11 than the second sub-etching area K12 of the first etching area K1.
  • the gap region formed after the corresponding part of each first sub-etching region K11 is etched and removed is the first sub-gap region 151
  • the corresponding part of each second sub-etching region K12 The gap region formed after being etched away is the second sub-gap region 152 .
  • the first gap J1 obtained after each first etching region K1 is etched and removed includes a first sub-gap region 151 and a second sub-gap region 152 .
  • Each first gap J1 includes a first sub-gap region 151 that is closer to the selected side surface 11cc of the substrate 11 than a second sub-gap region 152 that the first gap J1 includes.
  • each of the plurality of third etching regions K3 includes a third sub-etching region K31 and a fourth sub-etching region K32
  • each third etching region K3 includes a third sub-etching region K31 and a fourth sub-etching region K32 .
  • the third sub-etching area K31 of the etching area K3 is closer to the selected side surface 11cc of the substrate 11 than the fourth sub-etching area K32 of the third etching area K3.
  • the gap area formed after the corresponding part of each third sub-etching region K31 is etched and removed is the third sub-gap region 171, and the corresponding part of each fourth sub-etching region K32 is etched.
  • the gap area formed after removal is the fourth sub-gap area 172 .
  • the third gap J3 obtained after each third etching region K3 is etched away includes a third sub-gap region 171 and a fourth sub-gap region 172.
  • Each third gap J3 includes a third sub-gap region 171 and a fourth sub-gap region 172.
  • the gap area 171 is closer to the selected side surface 11cc of the substrate 11 than the fourth sub-gap area 172 included in the third gap J3.
  • the process of using laser etching to pattern the conductive layer 13' to form a complete plurality of connecting leads 13 arranged side by side includes: connecting multiple conductive layers 13' with the first etching After the corresponding part of area K1 is removed by laser etching, the first parts 131 of multiple connecting leads 13 are obtained. The first parts 131 of two adjacent connecting leads 13 are separated by a first gap J1; the conductive layer 13' is After a plurality of parts corresponding to the second etching area K2 are removed by laser etching, a plurality of second portions 132 of the connecting leads 13 are obtained. The second portions 132 of the two adjacent connecting leads 13 are separated by a second gap.
  • the laser Laser1 is irradiated to the conductive layer 13', and the plurality of first etching areas K1 of the conductive layer are etched, thereby forming the first portions 131 of the plurality of connecting leads 13.
  • the laser Laser2 irradiates the conductive layer 13' to etch the plurality of second etching areas K2 of the conductive layer, thereby forming the second portions 132 of the plurality of connecting leads 13.
  • the laser Laser 3 irradiates the conductive layer 13' to etch the plurality of third etching areas K3 of the conductive layer, thereby forming a plurality of third portions 133 of the connecting leads 13.
  • laser Laser1, Laser2, and Laser3 simultaneously attack multiple first etching areas K1, multiple second etching areas K2, and multiple third etching areas K3 of the conductive layer 13' from different directions.
  • the corresponding portions are etched to pattern the conductive layer 13', thereby obtaining a plurality of connection leads 13 as shown in Figures 12A, 12B and 13.
  • the laser irradiates the plurality of first etching areas K1, the plurality of second etching areas K2 and the plurality of third etching areas of the conductive layer 13'.
  • the etching sequence of the parts corresponding to etching area K3 is not required.
  • the following takes the example of laser Laser1, Laser2 and Laser3 etching the conductive layer 13' from different directions to form a plurality of connecting leads 13 for detailed description.
  • the laser Laser2 is first irradiated to the conductive layer 13', and the plurality of second portions 13'2 of the conductive layer 13' are The corresponding portion of the second etching region K2 is etched and removed, thereby forming the second portions 132 of a plurality of connecting leads 13 .
  • laser Laser1 and Laser3 are irradiated to the conductive layer 13' from different directions in a time division or at the same time, and the portions corresponding to the plurality of first etching areas K1 and the third portion 13' of the first part 13'1 of the conductive layer 13' are illuminated.
  • Corresponding parts of the plurality of third etching regions K3 of 3 are etched and removed, thereby forming the first portions 131 and the third portions 133 of the plurality of connecting leads 13 .
  • the laser is emitted from one side of the selected side 11cc of the substrate 11 toward the selected side 11cc of the substrate 11, After the laser etches and removes the corresponding parts of the plurality of second etching regions K2, the first part 13'1 of the conductive layer 13' is close to the part of the selected side 11cc of the substrate 11, and/or the third part of the conductive layer 13' The portion 13'3 close to the selected side 11cc of the substrate 11 will be etched away by the residual energy of the laser.
  • the part of the first part 13'1 of the conductive layer 13' that needs to be removed by etching and the part of the third part 13'3 of the conductive layer 13' that needs to be removed by etching are divided into two parts.
  • the portions close to the selected side 11cc of the substrate 11 (for example, the portion corresponding to the first sub-etching area K11 in the first etching area K1 and the third sub-etching area in the third etching area K3) are etched and removed respectively.
  • the portion corresponding to the etching area K31) is removed by etching when forming the second portion 132 of the plurality of connecting leads 13, and the remaining portions that need to be etched are removed by etching in another step.
  • the first etching area K1 The size of the first sub-gap area 151 and the second sub-gap area 152 included in the first gap J1 obtained after the corresponding part is etched away may be the same or different along the first direction X, and the third etching area K3 corresponds to The size of the third sub-gap region 171 and the fourth sub-gap region 172 included in the third gap J3 obtained after the part is etched away may be the same or different along the first direction XS.
  • the first gap J1 between two adjacent connecting leads 13 includes a first sub-gap region 151 and a second sub-gap region 152 that have the same size along the first direction X. .
  • the first gap J1 between two adjacent connecting leads 13 includes a first sub-gap region 151 and a second sub-gap region 152 with different sizes along the first direction X.
  • the size of the first sub-gap region 151 included in the first gap J1 between two adjacent connecting leads 13 along the first direction The size of the two sub-gap regions 152 along the first direction X.
  • the size of the first sub-gap area 151 included in the first gap J1 between two adjacent connecting leads 13 along the first direction X is larger than the second sub-gap area 152 included in the first gap J1 Dimension along the first direction X.
  • step S61 it also includes: S71, laser etching the remaining parts of the conductive layer 13' to form a complete plurality of connecting leads 13.
  • laser etching the remaining parts of the conductive layer 13' to form a complete plurality of connection leads 13 includes: laser Laser 1 etching the first part 13'1 of the conductive layer 13' to form the first part 131 and/or the multiple connection leads 13 Or laser etching the third portion 13 ′ 3 of the conductive layer 13 ′ in the Laser 3 direction to form the third portion 133 of the plurality of connecting leads 13 .
  • the step of removing the first mask 20 is in the step of laser etching the first portion 13 of the conductive layer 13'.
  • the steps of laser etching the third portion 13'3 of the conductive layer 13' and removing the first mask 20 are performed in no particular order.
  • the first portions 131 of two adjacent connecting leads 13 are separated by a first gap J1, and the second portions 132 of two adjacent connecting leads 13 are separated by a second gap J2.
  • the two adjacent connecting leads 13 are separated by a first gap J1.
  • the third portions 133 of the leads 13 are separated by a third gap J3. The dimensions of the first gap J1, the second gap J2 and the third gap J3 between any two adjacent connecting leads 13 will be described below.
  • the dimensions of the first gap J1, the second gap J2, and the third gap J3 along the first direction X may be the same or different.
  • At least two of the first gap J1, the second gap J2, and the third gap J3 have the same size along the first direction X.
  • the first gap J1 and the second gap J2 have the same size along the first direction X
  • the first gap J1 and the third gap J3 have the same size along the first direction X
  • the second gap J2 and the third gap J2 have the same size.
  • the size of the gap J3 along the first direction X is the same, or the size of the first gap J1, the second gap J2 and the third gap J3 along the first direction X are all the same.
  • the size of the first sub-gap region 151 included in the second gap J2 and the first gap J1 along the first direction X is the same. It can be understood that in this case, the first sub-gap region 151 and the second sub-gap region 152 included in the first gap J1 may have the same or different sizes along the first direction X.
  • the second gap J2, the third gap J3, and the first sub-gap region 151 have different sizes along the first direction X.
  • the size of the second gap J2 (or the third gap J3) along the first direction X is larger than the size of the first sub-gap region 151 included in the first gap J1 along the first direction X.
  • step S51 the conductive layer 13' is laser etched to form a complete plurality of connecting leads 13, and therefore, after steps S51 and S61, step S71 is not included.
  • some embodiments of the present disclosure provide another method of manufacturing a display panel, including:
  • the substrate 11 includes a first surface 11a, a second surface 11b and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one of the plurality of side surfaces 11c One side is 11cc for the selected side.
  • the first surface 11a includes a display area AA and a peripheral area AN located on at least one side of the display area AA.
  • the peripheral area AN is closer to the selected side surface 11cc of the substrate 11 than the display area AA.
  • a plurality of first binding electrodes 12 are arranged at intervals along the first direction X, and each first binding electrode 12 extends along the second direction Y.
  • the peripheral area AN extends along the first direction X.
  • the first direction X intersects the second direction Y.
  • the plurality of first binding electrodes 12 are electrically connected to the driving circuit layer 14 .
  • the first direction X is perpendicular to the second direction Y.
  • the size of the first binding electrode 12 along the second direction Y is greater than or equal to 50 ⁇ m.
  • the size of the first binding electrode 12 along the second direction Y ranges from 50 to 80 ⁇ m.
  • the size of the first binding electrode along the second direction Y is, for example, 50 ⁇ m, 70 ⁇ m or 80 ⁇ m.
  • the first mask 20 at least includes a first body part 201 .
  • the first body part 201 covers the portion of the driving circuit layer 14 close to the selected side 11cc of the substrate 11 .
  • the first mask 20 The first body portion 201 also covers the portions of the plurality of first binding electrodes 12 close to the display area AA.
  • the first main body portion 201 included in the first mask 20 can completely cover the driving circuit layer 14. cover. In this case, the first body portion 201 still covers the portions of the plurality of first binding electrodes 12 close to the display area AA.
  • the conductive layer 13 ′ includes: a first part 13 ′ 1 located on the side of the first surface 11 a of the substrate 11 , and a second part 13 ′ located on the side of the selected side 11 cc of the substrate 11 . 2 and a third portion 13'3 located on the second surface 11b side of the substrate 11.
  • the first portion 13'1 of the conductive layer 13' covers portions of the plurality of first binding electrodes 12 close to the selected side surface 11cc of the substrate 11.
  • the first portion 13'1 of the conductive layer 13' and the first main body portion 201 of the first mask 20 do not overlap.
  • the first portion 13'1 of the conductive layer 13' overlaps with portions of the plurality of first binding electrodes 12 close to the selected side 11cc of the substrate 11.
  • the main body portion 201 of the first mask 20 cannot cover all the first bonding electrodes 12 , and at least the overlapping portions of the first bonding electrodes 12 and the connecting leads 13 need to be exposed.
  • the first portion 13'1 of the conductive layer 13' overlaps with portions of the plurality of first binding electrodes 12 close to the selected side 11cc of the substrate 11 in a direction perpendicular to the selected side 11cc of the substrate 11
  • the size range is 30 ⁇ 60 ⁇ m.
  • the size of the overlapping portion of the first portion 13'1 of the conductive layer 13' and the plurality of first binding electrodes 12 close to the selected side surface 11cc of the substrate 11 along the second direction Y is, for example, 30 ⁇ m, 50 ⁇ m or 60 ⁇ m.
  • a portion of the first binding electrode 12 close to the display area AA is covered by the first main body 201 of the first mask 20, and a portion of the first binding electrode 12 away from the display area AA is covered by the first portion 13'1 of the conductive layer 13'.
  • the size of the portion of the first binding electrode 12 covered by the first body portion 201 of the first mask 20 along the second direction Y ranges from 30 to 60 ⁇ m.
  • the size of the portion of the first binding electrode 12 covered by the first main body portion 201 of the first mask 20 along the second direction Y is, for example, 30 ⁇ m, 45 ⁇ m, or 60 ⁇ m.
  • each of the plurality of connection leads 13 includes a first portion 131 located on the first surface 11 a side of the substrate 11 , and a first portion 131 located on the selected side surface 11 cc of the substrate 11 .
  • the first portion 131 of each connecting lead 13 is electrically connected to a first binding electrode 12 .
  • Laser etching the conductive layer 13' to form a plurality of connection leads 13 includes: as shown in Figures 10 and 11, laser etching at least the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the multiple connection leads 13 .
  • step S51 at least the second portion 13'2 of the conductive layer 13' is laser etched to form the second portion 132 of the plurality of connecting leads 13.
  • step S62 the following steps are further included:
  • laser etching the remaining portions of the conductive layer 13' to form a complete plurality of connection leads 13 includes: laser etching the first portion 13'1 of the conductive layer 13' to form the first portion 131 and/or the plurality of connection leads 13.
  • the third portion 13 ′ 3 of the conductive layer 13 ′ is laser etched to form the third portion 133 of the plurality of connecting leads 13 .
  • the complete plurality of connecting leads 13 are shown in Figure 12A, Figure 12B and Figure 13.
  • step S71 In the above steps, regarding laser etching of the remaining portions of the conductive layer 13' to form a complete plurality of connection leads 13, please refer to the previous description of step S71, which will not be described again here.
  • the third portion 133 of the connecting lead 13 is linear and the extending direction of the third portion 133 of the connecting lead 13 is perpendicular to the selected side surface 11cc of the substrate 11 , then the third portion 133 of the connecting lead 13 It can be formed in the same step when the second portion 13'2 of the conductive layer 13' is laser etched to form the second portion 132 of the connection lead 13.
  • the laser Laser2 irradiates the conductive layer 13' in the direction in Figure 11.
  • the laser can continue to irradiate the third portion 13'2 of the conductive layer 13', and etch and remove the portion corresponding to the third etching area K3 of the conductive layer 13'.
  • the connecting lead 13 The second part 132 and the third part 133 are formed in the same step, and the second part 132 and the third part 133 of the adjacent connecting leads 13 are both formed by laser etching.
  • some embodiments of the present disclosure provide another method of manufacturing a display panel, including:
  • the substrate 11 includes a first surface 11a, a second surface 11b and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one of the plurality of side surfaces 11c One side is 11cc for the selected side.
  • the first surface 11a includes a display area AA and a peripheral area AN located on at least one side of the display area AA.
  • the peripheral area AN is closer to the selected side surface 11cc of the substrate 11 than the display area AA.
  • a plurality of first binding electrodes 12 are arranged at intervals along the first direction X, and each first binding electrode 12 extends along the second direction Y.
  • the peripheral area AN extends along the first direction X.
  • the first direction X intersects the second direction Y.
  • the plurality of first binding electrodes 12 are electrically connected to the driving circuit layer 14 .
  • the first direction X is perpendicular to the second direction Y.
  • the first mask 20 includes a first main body part 201 and a plurality of first finger parts 202 .
  • the first ends of the plurality of first finger portions 202 of the first mask 20 are connected to the first main body portion 201 of the first mask 20 , and the second ends of the plurality of first fingers 202 of the first mask 20 are connected to each other.
  • the plurality of first finger portions 202 of the first mask 20 are closer to the selected side 11cc of the substrate 11 than the first body portion 201 of the first mask 20 .
  • the first mask 20 has two shapes, and each first finger 202 of the plurality of first fingers 202 is located between two adjacent first binding electrodes 12 gap area.
  • the size of the first finger portion 202 along the second direction Y is greater than or equal to the size of the first binding electrode 12 along the second direction Y.
  • the size of the first finger 202 along the second direction Y ranges from 60 ⁇ m to 1 mm.
  • the size of the first finger 202 along the second direction Y is, for example, 60 ⁇ m, 500 ⁇ m, or 1 mm.
  • the boundary between the orthographic projection of the plurality of first fingers 202 of the first mask 20 on the substrate 11 and the selected side surface 11cc of the substrate 11 is with a set distance between them.
  • the set distance is, for example, distance d3 as shown in FIGS. 16 and 24 .
  • the distance between the boundary of the orthographic projection of the plurality of first fingers 202 of the first mask 20 on the substrate 11 and the selected side 11cc of the substrate 11 The range of d3 is 0 ⁇ 60 ⁇ m.
  • the distance d3 is, for example, 20 ⁇ m, 35 ⁇ m, or 60 ⁇ m.
  • the size of each first finger 202 of the first mask 20 is d5 is less than or equal to the distance d4 between the two adjacent first binding electrodes 12 .
  • the first finger portion 202 included in the first mask 20 has a size in the first direction X in a range of greater than or equal to 20 ⁇ m and less than 60 ⁇ m.
  • the distance between the two first binding electrodes 12 adjacent to the first finger 202 along the first direction X is greater than or equal to 30 ⁇ m and less than or equal to 300 ⁇ m.
  • the conductive layer 13' includes: a first portion 13'1 located on the first surface 11a side of the substrate 11, and a second portion 13' located on the selected side surface 11cc side of the substrate 11. 2 and a third portion 13'3 located on the second surface 11b side of the substrate 11.
  • the first portion 13'1 of the conductive layer 13' covers portions of the plurality of first binding electrodes 12 close to the selected side surface 11cc of the substrate 11.
  • Figure 18 is a cross-sectional view obtained according to the cross-sectional line EE in Figure 17
  • Figure 19 is a cross-sectional view obtained according to the cross-sectional line FF in Figure 17
  • the first portion 13'1 of the conductive layer 13' does not overlap with the first body portion 201 of the first mask 20, and the first portion 13'1 of the conductive layer 13' does not overlap with the first finger portion 202 of the first mask 20. There is overlap.
  • each of the plurality of connection leads 13 includes a first portion 131 located on the first surface 11 a side of the substrate 11 , and a first portion 131 located on the selected side surface 11 cc of the substrate 11 .
  • the first portion 131 of each connecting lead 13 is electrically connected to a first binding electrode 12 .
  • Laser etching the conductive layer 13' to form a plurality of connecting leads 13 includes: as shown in Figures 20 to 22, laser etching at least the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the multiple connecting leads 13. .
  • the driving circuit layer 14 is formed in the display area AA of the first surface 11a, and then the first mask 20 is set on the first surface 11a side of the substrate 11, and the driving circuit layer 14 is close to the substrate 11
  • the selected sides of the 11cc section are cladded therein.
  • the laser Laser2 irradiates the conductive layer 13' in the directions shown in Figures 23, 24, and 25.
  • the first portion 131 of the connecting lead 13 is The thickness d2 on the substrate 11 is smaller than the thickness d1 of the film layer in the display area AA.
  • the laser Laser2 moves along the direction of Figure 23
  • the laser light directed to the driving circuit layer 14 is blocked by the main body 201 of the first mask 20, which protects the driving circuit layer 14 and avoids The laser causes damage to the driving circuit layer 14. This avoids the problem that some of the lines configured to transmit circuit signals are removed or damaged by laser etching after the driving circuit layer 14 is irradiated by laser, thereby affecting the normal transmission of circuit signals, thus improving the reliability of the display panel.
  • the first portion 13'1 of the conductive layer 13' overlaps the first finger 202 of the first mask 20.
  • the The portion corresponding to the second sub-etching area K12 of the first part 13'1 overlaps with the plurality of first fingers 202 of the first mask 20, and the second sub-etching area of the first part 13'1 of the conductive layer 13'
  • the portion corresponding to the etching area K12 is located on the side of the plurality of first fingers 202 of the first mask 20 away from the substrate 11 .
  • the first portion 13' of the conductive layer 13' is located on the side of the plurality of first fingers 202 of the first mask 20 away from the substrate 11. It can be understood that the conductive layer 13' is The portion corresponding to the second sub-etching region K12 of the first portion 13'1 of the layer 13' will be removed together with the plurality of first fingers 202 of the first mask 20 when the first mask 20 is removed.
  • the first mask 20 not only protects the film structure in the display area AA, but also reduces the etching range of the conductive layer 13' for laser etching and reduces the number of laser etching steps. time, further improving production efficiency.
  • the size of the first sub-etching region K11 along the second direction Y is smaller than that of the planarization layer 145 and the passivation layer 146 close to the selected side 11cc of the substrate 11 The distance L1 between the orthographic projection of the boundary line B on the substrate 11 and the selected side surface 11cc of the substrate 11 .
  • step S53 laser Laser1, Laser2, and Laser3 simultaneously etch multiple first etching areas K1 and multiple second etching areas K1 of the conductive layer 13' in the directions shown in FIG. 18 and FIG. 19 respectively.
  • the corresponding portions of the etching area K2 and the plurality of third etching areas K3 are etched to pattern the conductive layer 13', thereby obtaining a plurality of connecting leads 13 as shown in FIG. 23.
  • the display panel includes A (A ⁇ 1, A is a positive integer) first binding electrodes 12 arranged at intervals along the first direction X. Then, along the first direction X, there are (A-1) gap areas between the A first binding electrodes 12. Accordingly, the number of the first fingers 202 of the first mask 20 is less than or equal to (A-1).
  • the first mask 20 when the number of the first finger portions 202 of the first mask 20 is zero, the first mask 20 only includes the first body portion 201 . In this case, the setting of the first mask 20 refers to the previous description and will not be described again here.
  • At least two first fingers 202 are included between any two first fingers 202 of the first mask 20 A binding electrode 12.
  • the display panel includes A (A ⁇ 3, A is a positive integer) first binding electrodes 12. Then, along the first direction X, the A first binding electrodes 12 have (A-1) In the gap area, the number of first fingers 202 of the first mask 20 is less than (A-1), and the first mask 20 includes at most (A-2) first fingers 202 .
  • the distance between any two first binding electrodes 12 among the plurality of first binding electrodes 12 along the first direction X is not unique.
  • the distance between any first binding electrode 12 of the plurality of first binding electrodes 12 and another first binding electrode 12 on one side thereof along the first direction is the same.
  • the distance along the first direction X between any one of the plurality of first binding electrodes 12 and another first binding electrode 12 on one side thereof is equal to The spacing along the first direction X between one binding electrode 12 and another first binding electrode 12 on the other side is different.
  • the width of the first finger portion 202 (dimension along the first direction X) should be within a certain range.
  • the width of the first finger portion 202 is too narrow, the first finger portion 202 is easily deformed, and the first finger portion 202 is easily unable to achieve the spacing effect.
  • the width of the first finger 202 included in the first mask 20 is greater than 20 ⁇ m. Then, when the distance between two adjacent first binding electrodes 12 along the first direction X is less than 20 ⁇ m, then The first finger 202 cannot be disposed between the two first binding electrodes 12 .
  • the width of the first finger 202 is greater than the distance between the two adjacent first binding electrodes 12 along the first direction X, if there is a gap between the two first binding electrodes 12
  • the first finger 202 is provided with a sufficient distance (the width of the first finger 202 is smaller than the distance between the two adjacent first binding electrodes 12 along the first direction X).
  • the reduced flatness of the attachment of the first finger 202 will cause poor attachment of the first finger 202.
  • the first finger 202 is not adhered compliantly, the shape is deformed, etc. There is no guarantee that the first finger 202 can achieve the expected effect, causing the first The reliability problem of finger 202.
  • the plurality of first fingers 202 included in the first mask 20 can only be disposed between two first binding electrodes 12 whose distance along the first direction X is greater than 20 ⁇ m. It can be understood that in this case, the first finger 202 may be provided between the two first binding electrodes 12 whose distance along the first direction X is greater than 20 ⁇ m, or the first finger may not be provided. 202.
  • step S53 at least the second portion 13'2 of the conductive layer 13' is laser etched to form the second portions 132 of the plurality of connecting leads 13, including the following situations.
  • S53 includes: S53a, laser etching the second portion 13’2 of the conductive layer 13’ to form the second portion 132 of the plurality of connecting leads 13.
  • S53 includes: S53b, laser etching the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the plurality of connecting leads 13, and laser etching the first portion 13'1 of the conductive layer 13'.
  • the first portion 131 of the plurality of connecting leads 13 is formed.
  • the second part 132 of each connecting lead 13 is connected to a first part 131 .
  • the laser residual energy etches away the portion of the first portion 13 ′ 1 of the conductive layer 13 ′ close to the selected side 11 cc of the substrate 11 . It is understood that, as shown in FIG. 21 , the size of the etched-removed portion of the conductive layer 13 ′ 13 ′ 1 along the first direction X and the second portion 132 of the two adjacent connecting leads 13 are The spacing in one direction X is the same.
  • the etching length of the first part 13'1 of the conductive layer 13' by the laser incident along the direction of Laser2 is consistent with the length of the plurality of first fingers 202 of the first mask 20 on the substrate.
  • the distance between the boundary of the orthographic projection on 11 and the selected side 11cc of the substrate 11 is the same or approximately the same.
  • the etching length of the first part 13'1 of the conductive layer 13' by the laser is the length of the first part 13'1 of the conductive layer 13' close to the selected side 11cc of the substrate 11.
  • the portion corresponding to the first sub-etching region K11 shown in Figure 17 is etched away to obtain the first sub-gap region 151 as shown in Figure 23.
  • the etching length of 13'1 is the distance between the boundary of the orthographic projection of the first sub-gap region 151 on the substrate 11 and the selected side surface 11cc of the substrate 11.
  • the plurality of first etching areas K1 includes a first type of etching area and a second type of etching area K13, and each first type of etching area includes a first sub-etching area K11 and a second sub-etching area.
  • the etching region K12 includes a first sub-etching region K11 of the first type of etching region that is closer to the selected side surface 11cc of the substrate 11 than the second sub-etching region K12 of the first type of etching region.
  • the first sub-etching area K11, the second type etching area K13 and the second etching area K2 have the same size along the first direction X.
  • the laser Laser2 is irradiated to the conductive layer 13', and after the plurality of portions of the conductive layer 13' corresponding to the second etching area K2 are etched and removed, as shown in Figure 22, the laser continues to be irradiated to the conductive layer.
  • the first part 13'1 of 13' the corresponding parts of the plurality of first sub-etching regions K11 and the plurality of second-type etching regions K13 are etched and removed.
  • a plurality of first sub-gap regions 151 are obtained, and after the corresponding portions of the plurality of second-type etching regions K13 are removed, a plurality of second-type gap regions 16 are obtained.
  • the first portions 131 of the two connecting leads 13 connected to the two adjacent first binding electrodes 12 are separated by the second type gap region 16 .
  • the adjacent The first portions 131 of the two connection leads 13 connected to the two first binding electrodes 12 are separated by a first type gap region 15 .
  • the corresponding portions of the plurality of second sub-etching regions K12 on the conductive layer 13' will be removed along with the plurality of fingers 202 of the first mask 20 when the first mask 20 is removed. Therefore, the laser does not need to etch this part of the area, which saves the time of laser etching the corresponding part of this part of the area, further improving the production efficiency.
  • step S53 when the portions corresponding to the plurality of first sub-etching regions K11 and the plurality of second-type etching regions K13 of the first portion 13'1 of the conductive layer 13' are etched and removed,
  • step S63 after the first mask is removed, as shown in FIG. 23, the first portions 131 of the plurality of connecting leads 13 are formed.
  • step S63 it also includes:
  • laser etching the remaining portions of the conductive layer 13' to form a complete plurality of connection leads 13 includes: laser etching the first portion 13'1 of the conductive layer 13' to form the first portion 131 and/or the plurality of connection leads 13.
  • the third portion 13 ′ 3 of the conductive layer 13 ′ is laser etched to form the third portion 133 of the plurality of connecting leads 13 .
  • step S73 is a supplement to step S53. After removing the first mask 20, when the multiple parts of the conductive layer 13' corresponding to the first etching area K1, the multiple second etching areas K2, and the multiple third etching areas K3 have all been etched and removed, there is no need to execute step S73.
  • step S73a includes laser etching the first portion 13'1 of the conductive layer 13' to form the first portions 131 of the plurality of connection leads 13, and laser etching the third portion 13'3 of the conductive layer 13' to form a plurality of connection leads. Part 3 of 13133.
  • the first gap J1 includes a first type of gap area 15 and a second type of gap area 16 .
  • Each first type gap region 15 includes a first sub-gap region 151 and a second sub-gap region 152 , and each first type gap region 15 includes a first sub-gap region 151 that is smaller than the first type gap region 15 .
  • the second sub-gap area 152 is closer to the selected side 11cc of the substrate 11 .
  • the size of the second type gap region 16 along the first direction X is equal to the size of the first sub-gap region 151 along the first direction X.
  • each first type gap region 15 includes a first sub-gap region 151 with a size along the first direction X that is smaller than a size of the second sub-gap region 152 of the first type gap region 15 along the first direction X. size on. It can be understood that in this case, the shapes of the first type of gap area 15 and the second type of gap area 16 are different.
  • the second type of gap area 16 is a strip gap, and the first type of gap area 15 is a "convex" character. type gap.
  • the size of the first sub-gap region 151 included in each first-type gap region 15 along the first direction X is equal to the size of the second sub-gap region 152 of the first-type gap region 15 along the first direction X. It can be understood that, in this case, the first-type gap region 15 and the second-type gap region 16 are both strip gaps, and the two have the same shape and size.
  • first binding electrodes 12 are arranged at intervals along the first direction X, and each second binding electrode 12 extends along the second direction Y, where the second direction Y is perpendicular to the first direction Y.
  • the direction X and the second direction Y are perpendicular to the selected side surface 11cc of the substrate 11 .
  • the first mask 20 has another shape, and the distance between any two adjacent first binding electrodes 12 in the plurality of first binding electrodes 12 is A first finger 202 of the first mask 20 is disposed in the gap area.
  • the display panel includes A (A ⁇ 2, A is a positive integer) first binding electrodes 12. Then, along the first direction X, the A first binding electrodes 12 have (A-1) In the gap area, the number of first fingers 202 of the first mask 20 is (A-1), and the first mask 20 includes (A-1) first fingers 202 .
  • the first part 13'1 of the conductive layer 13' includes a plurality of first etching areas K1, and each first etching area K1 includes a first sub-etching area.
  • step S53 at least the second portion 13'2 of the conductive layer 13' is laser etched to form the second portion 132 of the plurality of connecting leads 13.
  • first gap J1 is a first type gap region 15.
  • Each first type gap region 15 includes a first sub-gap region 151 and a second sub-gap region 152, and the first sub-gap region 151 included in each first type gap region 15 is closer to the selected side surface 11cc of the substrate 11 than the second sub-gap region 152 of the first type gap region 15.
  • the first portions 131 of any two adjacent connecting leads 13 among the plurality of connecting leads 13 are separated by the first type gap region 15.
  • the first portions 131 of any two adjacent connection leads 13 among the plurality of connection leads 13 are separated by a first gap J1.
  • the second sub-gap area 152 included in the first gap J1 is removed from the first mask.
  • the first finger 202 of the first mask 20 is formed by removing the corresponding portion of the conductive layer 13' covering it together with the first finger 202, and the first gap J1 includes the first
  • the sub-gap region 151 is formed by laser etching the corresponding portion of the conductive layer 13'.
  • the energy of the laser needs to meet certain conditions.
  • the laser in the direction perpendicular to the first surface 11a of the substrate 11, in addition to etching the conductive layer 13', the laser will also etch the surface of the film layer that is in contact with the conductive layer 13' and closer to the side of the substrate 11 (when the conductive layer is in direct contact with the substrate 11, the laser will etch the surface of the substrate 11), so that the size of the first sub-gap area 151 included in the first gap J1 in the direction perpendicular to the first surface 11a is larger than the size of the second sub-gap area 152 included in the first gap J1 in the direction perpendicular to the first surface 11a.
  • the dimensions of the first sub-gap region 151 and the second sub-gap region 152 mentioned here perpendicular to the first surface 11 a of the substrate 11 refer to the side of the first sub-gap region 151 / the second sub-gap region 152 away from the substrate 11 The depth between the surface and the substrate 11 in the Z direction shown in Figure 1A.
  • the size of the first sub-gap region 151 included in each first-type gap region 15 along the first direction X is smaller than the size of the second sub-gap region 152 of the first-type gap region 15 along the first direction X. It can be understood that, in this case, the first-type gap region 15 and the second-type gap region 16 have different shapes, the second-type gap region 16 is a strip-shaped gap, and the first-type gap region 15 is a "convex"-shaped gap.
  • the size of the first sub-gap region 151 included in the first type of gap region 15 along the first direction X is greater than or equal to 33 ⁇ m and less than or equal to 73 ⁇ m.
  • the size of the first sub-gap region 151 included in the first type of gap region 15 along the first direction X is greater than or equal to 30 ⁇ m and less than or equal to 70 ⁇ m.
  • the display panel further includes a plurality of second binding electrodes 19 disposed on one side of the second surface 11 b of the substrate 11 .
  • One end of the plurality of second binding electrodes 19 close to the selected side 11cc of the substrate 11 is configured to be connected to the third portion 133 of the connecting lead 13 , and one end of the plurality of second binding electrodes 19 is away from the selected side 11cc of the substrate 11 It is configured to be connected to the circuit board located on the second surface 11b side of the substrate 11 .
  • the end of one end of the plurality of second binding electrodes 19 away from the selected side 11cc of the substrate 11 is used as a binding electrode connected to the flexible circuit board F. That is to say, a larger position needs to be reserved for the plurality of second binding electrodes 19 Perform external line binding.
  • the third portion 133 of the connecting lead 13 only needs to ensure that it can connect with the second binding electrodes 19 An effective connection without the need to reserve a location bound to an external line.
  • the third portion 133 of the plurality of connecting leads 13 acts as a binding electrode and is directly electrically connected to the flexible circuit board F, when the structure as shown in Figure 31 is adopted, , due to the presence of the second binding electrode 19, the length of the third portion 133 of the connecting lead 13 is shortened.
  • the second binding electrode 19 is linear. Each second binding electrode 19 extends in the Y direction shown in FIG. 28 , for example.
  • the second binding electrode 19 is non-linear, and the second binding electrode 19 includes a plurality of parts with different extending directions connected end to end.
  • each second binding electrode 19 includes, for example, a first sub-section 191 and a second sub-section 192
  • the second binding electrode 19 includes the first sub-section 191 and the second sub-section 192 .
  • the extending directions of the portions 192 are different.
  • the first sub-portion 191 of each second binding electrode 19 is, for example, a straight sub-portion, and the first sub-portion 191 of each second binding electrode 19 extends along the second direction Y.
  • the laser Laser2 is emitted toward the conductive layer along the direction shown in FIG. 28 to form the second part 132 of the plurality of connecting leads 13. After the laser etches the portion corresponding to the second etching area of the conductive layer, the residual energy of the laser removes the portion of the third portion of the conductive layer close to the selected side of the substrate.
  • the extension direction of the second binding electrode is consistent with the direction of the laser path when the laser etch the corresponding part of the second etching area, even if the laser Laser2 irradiates the third part of the conductive layer in the direction shown in Figure 28, the laser The etching range is located between two adjacent second binding electrodes, and the laser will not be emitted toward the second binding electrodes. Therefore, the finally formed second binding electrode 19 will not be damaged.
  • the laser Laser2 is emitted toward the conductive layer 13' along the direction shown in FIG28 to form the second part of multiple connecting leads.
  • the residual energy of the laser will cause damage to the second binding electrode.
  • the residual energy of the laser will be emitted toward the second sub-portion 192 of the second binding electrode 19, causing damage to the second binding electrode 19, resulting in defects, thereby affecting the reliability of the display panel.
  • the laser etching path is located in the range corresponding to the second etching area K2 and the third etching area K3, and the third portion of the connecting leads 13
  • the size of 133 along the first direction Outside the path range therefore, the residual energy of the laser will not cause damage to the first sub-portion 191 of the second binding electrode 19 .
  • each third etching region K3 is the area between the third portions 133 of any two adjacent connection leads 13 among the plurality of connection leads formed.
  • a method for preparing a display panel including:
  • the substrate 11 includes a first surface 11a, a second surface 11b and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one side surface of the plurality of side surfaces 11c is Selected side 11cc.
  • the first surface 11a includes a display area AA and a peripheral area AN located on at least one side of the display area AA. The peripheral area AN is closer to the selected side surface 11cc of the substrate 11 than the display area AA.
  • S2a Form an array layer on the first surface 11a side of the substrate 11.
  • forming the array layer on the first surface 11a side of the substrate 11 at least includes: forming the driving circuit layer 14 in the display area AA.
  • forming the array layer on the first surface 11a side of the substrate 11 further includes: forming a plurality of first binding electrodes 12 in the peripheral area AN.
  • a plurality of first binding electrodes 12 are arranged at intervals along the first direction X, and each first binding electrode 12 extends along the second direction Y.
  • the peripheral area AN extends along the first direction X.
  • the first direction X intersects the second direction Y.
  • the plurality of first binding electrodes 12 are electrically connected to the driving circuit layer 14 .
  • the first direction X is perpendicular to the second direction Y.
  • the first mask 20 at least includes a first body part 201 .
  • the first body part 201 covers the portion of the driving circuit layer 14 close to the selected side 11cc of the substrate 11 .
  • the first mask 20 The first body portion 201 also covers the portions of the plurality of first binding electrodes 12 close to the display area AA.
  • the first mask 20 further includes a plurality of first fingers 202 .
  • S3a Form a plurality of second binding electrodes 19 arranged in parallel and spaced apart on the second surface 11b side of the substrate 11.
  • each second binding electrode 19 includes a first sub-portion 191 and a second sub-portion 192.
  • the first sub-portion 191 of each second binding electrode 19 is closer to the selected side surface 11cc of the substrate 11 than the second sub-portion 192 of the second binding electrode 19.
  • each connecting lead 13 is electrically connected to the first sub-portion 191 of a second binding electrode 19 .
  • the extending direction of the first sub-portion 191 of the second binding electrode 19 is the same as the extending direction of the end of the third portion 133 of the connecting lead 13 connected thereto.
  • the second mask 21 at least includes a second main body portion 211 .
  • the second main body portion 211 at least covers the portion of the second sub-portions 192 of the plurality of second binding electrodes 19 close to the selected side surface 11cc of the substrate 11 .
  • the second mask 21 formed further includes a plurality of second fingers 212 .
  • the first ends of the plurality of second fingers 212 are connected to the second main body 211 , the second ends of the plurality of second fingers 212 extend toward the selected side 11cc of the substrate 11 , and the plurality of second fingers of the second mask 21
  • the finger portion 212 is closer to the selected side surface 11cc of the substrate 11 than the second main body portion 211 of the second mask 21 .
  • each second finger 212 of the plurality of second fingers 212 of the second mask 21 is located in a gap area between two adjacent second binding electrodes 19 .
  • the plurality of second fingers 212 of the second mask 21 have a set distance between the boundaries of the orthographic projection on the substrate 11 and the selected side surface 11cc of the substrate 11 .
  • each second finger 212 of the second reticle 21 is less than or equal to two adjacent ones thereof.
  • the second binding electrode 19 is prepared by a patterning process of film formation, exposure, development and etching.
  • the conductive layer 13' includes: a first portion 13'1 located on the side of the first surface 11a of the substrate 11, a second portion 13'2 located on the side of the selected side 11cc of the substrate 11, and a second portion located on the second surface of the substrate 11.
  • the third section on the 11b side is 13'3.
  • the first portion 13'1 of the conductive layer 13' covers portions of the plurality of first binding electrodes 12 close to the selected side surface 11cc of the substrate 11.
  • the third portion 13'3 of the conductive layer 13' covers portions of the plurality of second binding electrodes 19 close to the selected side 11cc of the substrate 11.
  • the first portion 13'1 of the conductive layer 13' and the first body portion 201 of the first mask 20 do not overlap.
  • the third portion 13'3 of the conductive layer 13' does not overlap with the second main body portion 211 of the second mask 21.
  • the conductive layer 13' is patterned by laser etching to form a plurality of connecting leads 13 arranged in parallel and at intervals.
  • each of the plurality of connection leads 13 includes a first portion 131 located on the first surface 11 a side of the substrate 11 , and a first portion 131 located on the selected side surface 11 cc of the substrate 11 .
  • the first portion 131 of each connecting lead 13 is electrically connected to a first binding electrode 12 .
  • Laser etching the conductive layer 13' to form a plurality of connecting leads 13 includes: as shown in FIGS. 29 , 30 , 33 and 34 , at least the second portion 13'2 of the conductive layer 13' is laser-etched to form a second portion 132 of the plurality of connecting leads 13.
  • the size of the third portion 133 of the connection lead 13 is larger than the size of the second binding electrode 19 connected thereto.
  • the size of the third portion 133 of the connecting lead 13 is equal to the size of the second binding electrode 19 connected thereto.
  • the size of the third portion 133 of the connection lead 13 is smaller than the size of the second binding electrode 19 connected thereto.
  • the step of arranging the first mask 20 is after the step of forming the array layer
  • the step of arranging the second mask 21 is after the step of forming a plurality of second binding electrodes 19 .
  • the order of forming the array layer and forming the plurality of second binding electrodes is not limited.
  • the step of removing the first mask is after forming the second part of the plurality of connection leads and before forming the first part of the plurality of connection leads.
  • the step of removing the second mask is after forming the second part of the plurality of connection leads and before forming the third part of the plurality of connection leads.
  • step S5 the method of forming the first part and the second part of the plurality of connecting leads is as described above and will not be described again here.
  • the following describes a method for forming a plurality of third portions 133 of the connecting leads 13 when the display panel includes a plurality of second binding electrodes 19 .
  • the second mask in the step of arranging the second mask, includes a second body portion.
  • the second main body portion at least covers the portion of the second sub-portion of the plurality of second binding electrodes close to the selected side surface of the substrate.
  • the laser Laser2 etches the second part of the conductive layer to form the second part of the plurality of connecting leads. Since the portion of the second sub-portions of the plurality of second binding electrodes close to the selected side of the substrate is covered by the second main body portion of the second mask, when the laser etch the portion corresponding to the third etching area K3 After etching and removal, the laser is blocked by the second main part of the second mask, thereby avoiding the problem that the second sub-part 192 of the second binding electrode 19 is damaged by the residual energy of the laser.
  • the laser Laser 3 etches and removes the portions corresponding to the plurality of third etching regions of the third portion of the conductive layer along the direction shown in FIG. 1B , thereby forming a complete third portion of the plurality of connecting leads.
  • the second mask 21 in the step of arranging the second mask 21, as shown in FIGS. 28 and 32 , includes a second main body part 211 and a plurality of second finger parts 212.
  • the second main body part 201 at least covers the portion of the second sub-parts 192 of the plurality of second binding electrodes 19 close to the selected side surface 11cc of the substrate 11 .
  • the display panel includes B (B ⁇ 1, B is a positive integer) second binding electrodes 19 arranged at intervals along the first direction X. Then, along the first direction X, B second binding electrodes 19 There are (B-1) gap areas between the electrodes 19. Correspondingly, the number of second fingers 212 of the second mask 21 is less than or equal to (B-1).
  • the second mask 21 only includes the second main portion 211 .
  • the number of the plurality of second fingers 212 of the second mask 21 is smaller. As shown in FIG. 28 , along the first direction At least two second binding electrodes 19 are included between any two second finger portions 212 in the portion 212 .
  • the display panel includes B (B ⁇ 3, B is a positive integer) second binding electrodes 19, then, along the first direction X, the B second binding electrodes 19 have (B-1) gap areas, the number of second fingers 212 of the second mask 21 is less than (B-1), and the second mask 21 includes at most (B-2) second fingers 212.
  • the portion corresponding to at least one third etching area K3 among the plurality of third etching areas K3 of the third portion 13'3 of the conductive layer 13' is consistent with the plurality of second etching areas K3 of the second mask 21.
  • the fingers 212 overlap.
  • the plurality of third etching areas K3 include a third type of etching area and a fourth type of etching area K33, and each third type of etching area includes a third sub-etching area K31 and a fourth sub-etching area.
  • the etching region K32 includes a third sub-etching region K31 of the third type of etching region that is closer to the selected side surface 11cc of the substrate 11 than the fourth sub-etching region K32 of the third type of etching region.
  • the sizes of the third sub-etching area K31, the fourth type etching area K33 and the second etching area K2 along the first direction X are the same.
  • the portion of the third portion 13'3 of the conductive layer 13' located on the side of the plurality of second fingers 212 of the second mask 21 away from the substrate 11 is the fourth sub-etching area.
  • the part corresponding to K32 it can be understood that the part corresponding to the fourth sub-etching area K32 of the third part 13'3 of the conductive layer 13' will follow the movement of the second mask 21 when the second mask 21 is removed.
  • the plurality of second fingers 212 are removed together.
  • step S5 at least the second portion 13'2 of the conductive layer 13' is laser etched to form the second portions 132 of the plurality of connecting leads 13, including the following situations.
  • step S5 includes: S5a, laser etching the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the plurality of connecting leads 13.
  • the laser Laser 2 etches the corresponding portions of the plurality of second etching regions K2 of the second part 13 ′ 2 of the conductive layer 13 ′ in the direction shown in FIG. 32 Remove the second portion 132 to form a plurality of connecting leads 13 .
  • the residual energy of the laser will also affect the third part 13'3 of the conductive layer 13' close to the selected side 11cc of the substrate 11. Partially caused damage.
  • the residual energy of the laser etches and removes the portions corresponding to the plurality of third sub-etching regions K31 in the third portion 13'3 of the conductive layer 13'. .
  • step S71a is also included: laser etching the first part 13'1 of the conductive layer 13' to form the first parts 131 of the plurality of connecting leads 13.
  • step S72a laser etching the third portion 13'3 of the conductive layer 13' to form a plurality of connecting leads 13. Part Three 133.
  • step S71 and step S72 is not limited.
  • step S5 includes: S5b, laser etching the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the plurality of connecting leads 13, and laser etching the first portion 13 of the conductive layer 13'.
  • '1 forms the first portion 131 of the plurality of connecting leads 13 .
  • the first portion 131 of the complete plurality of connection leads 13 is formed.
  • step S72b is also included: laser etching the third portion 13'3 of the conductive layer 13' to form the third portion 133 of the plurality of connecting leads 13.
  • step S5 includes: S5c, laser etching the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the plurality of connecting leads 13, and laser etching the third portion of the conductive layer 13'. 13'3 forms the third portion 133 of the plurality of connecting leads 13.
  • step S71c is also included: laser etching the first part 13'1 of the conductive layer 13' to form the first parts 131 of the plurality of connecting leads 13.
  • step S5 includes: S5d, laser etching the second portion 13'2 of the conductive layer 13' to form the second portion 132 of the plurality of connecting leads 13, and laser etching the first portion 13 of the conductive layer 13'.
  • '1 forms the first portion 131 of the plurality of connection leads 13
  • the third portion 13'3 of the conductive layer 13' is laser etched to form the third portion 133 of the plurality of connection leads 13.
  • the number of the plurality of second fingers 212 of the second mask 21 is relatively large. As shown in FIG. 32 , any two adjacent second fingers 212 of the plurality of second binding electrodes 19 A second finger 212 of the second mask 21 is disposed in the gap area between the binding electrodes 19 .
  • the display panel includes B (B ⁇ 2, B is a positive integer) second binding electrodes 19. Then, along the first direction X, the B second binding electrodes 19 have (B-1) In the gap area, the number of second fingers 212 of the second mask 21 is (B-1), and the second mask 21 includes (B-1) second fingers 212 .
  • step S5 as shown in FIG. 32, the portion corresponding to the fourth sub-etching region K32 included in the third etching region K3 of the third portion 13'3 of the conductive layer 13' is the same as the second etching region K32.
  • the second fingers 212 of the mask 21 overlap.
  • the laser Laser 2 etches the second portion 13'2 of the conductive layer 13'.
  • the laser only etches and removes a plurality of portions of the conductive layer 13' corresponding to the second etching region K2.
  • the residual energy of the laser will also affect the third portion of the conductive layer 13 ′.
  • the portion of the three portions 13'3 close to the selected side 11cc of the base plate 11 causes damage.
  • the laser when forming the second portions 132 of the plurality of connecting leads 13 , after the laser etches and removes multiple portions of the conductive layer 13 ′ corresponding to the second etching areas K2 , The laser will also etch and remove portions corresponding to the plurality of third sub-etching regions K31 of the third portion 13'3 of the conductive layer 13'. In this case, after the second mask 21 is removed, the third portion 133 of the plurality of connecting leads 13 is formed as shown in FIG. 35 .
  • the laser irradiates the second part and the third part of the conductive layer from one direction. Compared with as shown in FIG. 1B , the laser irradiates the second part and the third part of the conductive layer in two directions respectively. Three parts are etched, reducing the manufacturing process.
  • the step of setting the first mask 20 before the step of setting the first mask 20 , as shown in FIGS. 36 and 37 , it also includes: forming a light-emitting device layer G on the side of the driving circuit layer 14 away from the substrate 11 .
  • the first mask 20 at least includes a first body part 201 , or the first mask 20 includes a first body part and a plurality of first fingers.
  • the first body part 201 At least the portion of the driving circuit layer 14 close to the selected side surface 11cc of the substrate 11 is covered.
  • the main body portion 201 of the first mask 20 also covers the portion of the light emitting device layer G close to the selected side surface 11cc of the substrate 11 .
  • Figures 38 and 39 are cross-sectional views obtained based on the cross-section lines GG and HH in Figure 36.
  • the laser is blocked by the first mask 20. Since the first mask 20 protective effect, the laser will not cause damage to the light-emitting device layer, improving the quality of the display panel.
  • it after forming a plurality of complete connecting leads, as shown in FIG. 40 and FIG. 41 , it also includes: forming a light-emitting device layer G on the side of the driving circuit layer 14 away from the substrate 11 .
  • the step of forming the light-emitting device layer G may be before the step of forming a complete plurality of connection leads 13 or after the step of forming a complete plurality of connection leads 13 .
  • the size p1 of the first sub-gap region 151 along the second direction Y is smaller than the boundary of the first binding electrode 12 close to the selected side 11cc of the substrate 11 on the substrate 11 .
  • the distance between the projection and the selected side 11cc of the substrate 11 is L2.
  • embodiments of the present disclosure provide a display panel 100, as shown in FIGS. 1A, 1B, 40, and 41, including: a substrate 11, a driving circuit layer 14, a plurality of first bonding electrodes 12, Multiple connecting leads 13.
  • the substrate 11 includes a first surface 11a, a second surface 11b and a plurality of side surfaces 11c connecting the first surface 11a and the second surface 11b. At least one side surface 11c of the plurality of side surfaces 11c is a selected side surface 11cc.
  • the first surface 11a of the substrate 11 includes a display area AA and a peripheral area AN located on at least one side of the display area AA.
  • the peripheral area AN is closer to the selected side surface 11cc of the substrate 11 than the display area AA.
  • the driving circuit layer 14 is provided in the display area AA.
  • a plurality of first binding electrodes 12 are provided in the peripheral area AN and arranged at intervals along the first direction X.
  • the first direction X is parallel to the selected side 11cc of the substrate 11 and the first surface 11a of the substrate 11 .
  • the plurality of connecting leads 13 are arranged at intervals along the first direction X.
  • Each of the plurality of connection leads 13 includes a first portion 131 located on the first surface 11 a side of the substrate 11 , a second portion 132 located on the selected side surface 11 cc of the substrate 11 , and a third portion 132 located on the side of the selected side 11 cc of the substrate 11 .
  • the first portion 131 of each connecting lead 13 is electrically connected to a first binding electrode 12 .
  • the first portions 131 of two adjacent connecting leads 13 are separated by a first gap J1 , and the first gap J1 includes the first type of gap area 15 .
  • the first type of gap area 15 includes a first sub-gap area 151 and a second sub-gap area 152 .
  • the first sub-gap area 151 of each first type of gap area 15 is relative to the second sub-gap of the first type of gap area 15 .
  • Region 152 is closer to the selected side 11cc of substrate 11 .
  • the first portions 131 of two adjacent connection leads 13 among the plurality of connection leads 13 in the display panel provided by the above embodiments of the present application are separated by a first gap J1 , and the first gap J1 includes the first type of gap area 15 .
  • the first type of gap region 15 includes a first sub-gap region 151 and a second sub-gap region 152.
  • a first mask 20 is set on the driving circuit layer 14 to cover the portion of the driving circuit layer 14 close to the selected side 11cc of the substrate 11, so that the laser Laser 2 is directed along the direction perpendicular to
  • the laser light directed to the driving circuit layer 14 is blocked by the main body 201 of the first mask 20, which protects the driving circuit layer 14 and avoids
  • the laser causes damage to the driving circuit layer 14, thereby avoiding the problem that after the driving circuit layer 14 is irradiated by the laser, part of the circuit configured to transmit circuit signals is removed or damaged by laser etching, thereby affecting the normal transmission of the circuit signal, thereby improving the efficiency of the circuit signal. Display panel reliability.
  • the first mask 20 includes the first main body 201 and the plurality of first fingers 202 , the conductive layer formed on the plurality of first fingers 202 can be removed as the first mask 20 is removed. and removed, so that the second sub-gap region 152 of the first type gap region 15 can be formed without laser etching of this part of the conductive layer, and the size of the second sub-gap region 152 is the same as the size of the first finger 202 Or roughly the same, thereby saving laser etching steps, reducing laser etching range, and improving production efficiency.
  • the first mask 20 only includes the first main body portion 201, which can protect the driving circuit layer 14.
  • the size p3 of the first sub-gap area 151 of the first type of gap area 15 along the first direction X is greater than or equal to the size p3 of the second sub-gap area 152 of the first type of gap area 15 along the first direction Dimension p4 on X.
  • the first mask 20 includes the first main part 201. After the second part 132 of the plurality of connecting leads 13 is formed by laser etching, the residual energy of the laser will continue to radiate to the substrate along the direction of Laser2. 11.
  • the first sub-gap area 151 is formed by the selected portion from the display panel.
  • the second sub-gap area 152 is etched by laser Laser1 from the first surface side of the display panel.
  • the etching widths of the lasers in the two directions can be consistent or inconsistent.
  • the sizes of the first sub-gap region 151 and the second sub-gap region 152 of the first type of gap region 15 in the first direction are consistent or inconsistent.
  • the first sub-gap region 151 included in the first type gap region 15 can also be etched by laser Laser1 from the first surface side of the display panel.
  • the first type gap region 151 can also be etched by laser Laser1 from the first surface side of the display panel.
  • the first sub-gap region 151 and the second sub-gap region 152 included in the area 15 are both etched by laser Laser1 from the first surface side of the display panel.
  • the corresponding part of the etching area (the first etching area K1, the second etching area K2, or the third etching area K3) is completely etched away (that is, it needs to be etched away).
  • There is an electrical connection in the connecting leads which causes abnormal signal transmission.
  • the orthographic projection of the part corresponding to the first gap J1 on the substrate 11 will make the part corresponding to the first etching area K1 on the substrate 11
  • the orthographic projection on 11 surrounds it.
  • the absolute value of the difference between the size of the first gap J1 along the first direction X and the size of the first etching area K1 along the first direction The absolute value of the difference between the size of Y and the size of the first etching area K1 in the second direction Y ranges from 10 to 13 ⁇ m.
  • the orthographic projection of the portion corresponding to the second gap J2 on the substrate 11 surrounds the orthographic projection of the portion corresponding to the second etching area K2 on the substrate 11 .
  • the absolute value of the difference between the size of the second gap J2 along the first direction X and the size of the second etching area K2 along the first direction The absolute value of the difference between the size of Y and the size of the second etching region K2 along the second direction Y ranges from 10 to 13 ⁇ m.
  • the orthographic projection of the portion corresponding to the third gap J3 on the substrate 11 surrounds the orthographic projection of the portion corresponding to the third etching area K3 on the substrate 11 .
  • the absolute value of the difference between the size of the third gap J3 along the first direction X and the size of the third etching area K3 along the first direction The absolute value of the difference between the size of Y and the size of the third etching region K3 in the second direction Y ranges from 10 to 13 ⁇ m.
  • the size p1 of the first sub-gap region 151 of each first-type gap region 15 along the second direction Y is less than or equal to the size p1 of the first-type gap region 15 .
  • the second sub-gap region 152 has a dimension p2 along the second direction Y.
  • the second direction Y is parallel to the extending direction of the first portion 131 of the connecting lead 13 .
  • the size p1 of the first sub-gap region 151 of each first type gap region 15 along the second direction Y is greater than or equal to 33 ⁇ m and less than or equal to 73 ⁇ m.
  • the size p1 of the first sub-gap region 151 of each first type gap region 15 along the second direction Y is greater than or equal to 30 ⁇ m and less than or equal to 70 ⁇ m.
  • the residual energy of the laser will also cause the first portion 131 of the connecting leads 13 to be close to the selected side surfaces 11cc of the substrate 11.
  • a part is partially etched, and accordingly, a part of the first finger 202 of the first mask 20 close to the selected side 11cc of the substrate 11 is damaged, so that the laser etching length (along the second direction Y) is greater than The distance between the first finger 202 of the first mask 20 and the selected side 11cc of the substrate 11 .
  • the size of the first sub-gap region 151 along the second direction Y is increased compared to the distance along the second direction Y between the first finger 202 and the selected side surface 11cc.
  • the size of the first sub-gap region 151 of each first-type gap region 15 along the second direction Y is smaller than or equal to the size of the second sub-gap region 152 of the first-type gap region 15 .
  • the size in the second direction Y is smaller.
  • the first finger of the first mask has a longer size in the second direction, and the first finger extends as close to the selected side as possible. position, thereby more effectively blocking the laser from radiating to the driving circuit layer, and more parts of the conductive layer formed on the plurality of first fingers do not need to be laser etched, further reducing the laser etching range and improving production efficiency.
  • the difference in size between the first sub-gap region 151 and the second sub-gap region 152 of each first-type gap region 15 along the first direction X ranges from 0 to 100 ⁇ m.
  • the difference in size of the first sub-gap region 151 and the second sub-gap region 152 of each first type gap region 15 along the first direction X ranges from, for example, 0, 55 ⁇ m, or 100 ⁇ m.
  • the size of the first type gap area 15 will affect the size of its immediately adjacent connecting lead 13.
  • the size of the first sub-gap area 151 and the second sub-gap area 152 of each first type gap area 15 along the first direction If the phase difference is too large, on the basis of ensuring the electrical insulation between two adjacent connecting leads 13, the size uniformity of multiple connecting leads 13 is ensured, and the uniformity of their electrical performance is ensured.
  • the first portions 131 of any two adjacent connecting leads 13 among the plurality of connecting leads 13 are separated by a first-type gap region 15 .
  • the first portions 131 of each two adjacent connection leads 13 are separated by the first type gap area 15 . That is to say, during the preparation process of the display panel, the first mask 20 is, for example, as follows As shown in FIG. 25 , a plurality of first fingers 202 are included, and the plurality of first fingers 202 are located in the gap area between each adjacent two first binding electrodes 12 in a one-to-one correspondence, thereby obtaining multiple The first portions 131 of the connecting leads 13 are each separated by first type gap areas 15 .
  • the first gap J1 also includes a second type of gap area 16 , and the size p5 of the second type of gap area 16 along the first direction X is equal to the first size of the first type of gap area 15 .
  • the sub-gap region 151 has a dimension p3 along the first direction X.
  • the second type gap region 16 is obtained by laser etching the second type etching region K13 in the conductive layer 13 ′
  • the first type gap region 15 is obtained by laser etching the first sub-etching region in the conductive layer 13 ′.
  • Area K11 is obtained. Therefore, as shown in Figure 40, the size of the second type gap area 16 along the first direction X is uniform, and the size of the second type gap area 16 along the first direction X is equal to the first type.
  • the size of the first sub-gap region 151 of the gap region 15 along the first direction X is equal to the set etching width of the laser etching.
  • the first type of gap area 15 and at least one second type of gap area 16 are alternately provided.
  • the arrangement method of the first type gap area 15 and the second type gap area 16 in the plurality of first gaps J1 is related to the arrangement method of the first finger of the first mask.
  • the arrangement method is one first type gap area 15 and At least one second type gap area 16 is arranged alternately, that is to say, at least one second type gap area 16 is arranged between every two adjacent first type gap areas 15. As shown in Figure 40, two adjacent first type gap areas 15 are arranged alternately. One, two or more second type gap areas 16 are provided between the gap-like areas 15 .
  • the first sub-gap region 151 and the second sub-gap region 152 in each first-type gap region 15 are The boundary line is closer to the selected side surface 11cc of the substrate 11 than the boundary of one end of the plurality of first binding electrodes 12 close to the selected side surface 11cc of the substrate 11 .
  • the distance p6 between the boundary line of the first sub-gap region 151 and the second sub-gap region 152 and the selected side surface 11cc is smaller than the selected distance between the plurality of first binding electrodes 12 and the substrate 11 .
  • the distance L2 between the side surfaces 11cc is determined, and the dividing line between the first sub-gap area 151 and the second sub-gap area 152 is the boundary of one end of the first finger 202 of the first mask 20 close to the selected side surface 11cc of the substrate 11 , the first finger 202 of the first mask 20 exceeds the boundary of one end of the plurality of first binding electrodes 12 close to the selected side 11cc of the substrate 11, and the first finger 202 extends as close as possible to the selected side of the substrate 11
  • the position of 11cc on the side further reduces the laser etching range and improves production efficiency.
  • a plurality of first binding electrodes 12 are arranged side by side and spaced apart along the first direction X. As shown in FIGS. 40 and 41 , the size p9 of the first binding electrode 12 along the first direction X is less than or equal to the first portion 131 of the connecting lead 13 connected to the first binding electrode 12 along the first direction X. Size p8/p8' on.
  • the size of the first portion 131 of the connecting lead along the first direction X is generally larger than the size of the first binding electrode 12 connected thereto along the first direction X. Larger or equal, the two have a larger contact area and can be connected more firmly.
  • the first type of gap area 15 includes first sub-gap areas 151 and second sub-gap areas 152 of different sizes
  • the first portion of the connecting lead 13 separated by the first type of gap area 15 The portion 131 is also divided into two parts with unequal sizes.
  • the size of the first portion 131 of the connecting lead 13 along the first direction X is the size of the two portions of the first portion 131 of the connecting lead 13 along the first direction X respectively. average of.
  • the size of the first type gap region 15 along the first direction X is smaller than or equal to the interval p10 along the first direction X between two adjacent first binding electrodes 12 .
  • the size p3 of the first sub-gap region 151 of the first type gap region 15 along the first direction X and the size p4 of the second sub-gap region 152 along the first direction X are both smaller than or It is equal to the distance p10 between the two adjacent first binding electrodes 12 along the first direction X.
  • the first mask includes a plurality of first fingers, and the size of the first fingers along the first direction X is less than or equal to the two adjacent first binding electrodes 12 along the first direction With the pitch p10 in the direction X, the area corresponding to the first finger forms the second sub-gap area 152, and the first sub-gap area 151 is determined by the laser etching width.
  • the second portions 132 of two adjacent connecting leads 13 are separated by a second gap J2.
  • the second gap J2 is obtained by laser etching the second etching area K2 of the conductive layer.
  • the plurality of second gaps J2 have equal dimensions along the first direction X.
  • the residual energy of the laser will also remove the conductive layer 13'.
  • the corresponding part of the first sub-etching area K11 is removed by etching. It can be understood that the second gap J2 and the first sub-gap area 151 of the first gap J1 connected to it are all etched by the same laser in the same step. Erosion formation. Therefore, the size of the second gap J2 and the first sub-gap region 151 of the first gap J1 connected thereto along the first direction X are equal.
  • the display panel 100 includes a first binding electrode and a plurality of connection leads, and no binding electrode is provided on the second surface side of the substrate, so that the third part of the plurality of connection leads The portion away from the selected side is electrically connected to the integrated circuit chip or flexible circuit board to serve as a bonding electrode.
  • the display panel 100 further includes: a plurality of second binding electrodes 19 .
  • a plurality of second binding electrodes 19 are disposed on the second surface 11b side of the substrate 11 and are arranged at intervals along the first direction X.
  • Each second binding electrode 19 includes a first sub-portion 191 and a second sub-portion 192 .
  • the first sub-portion 191 of each second binding electrode 19 is closer to a selected portion of the substrate 11 than the second sub-portion 192 .
  • the third portion 133 of each connecting lead 13 is electrically connected to the first sub-portion 191 of a second binding electrode 19 .
  • the extending direction of the first sub-portion 191 of the second binding electrode 19 is the same as the extending direction of the third portion 133 of the connecting lead 13 electrically connected thereto.
  • the second binding electrode 19 is non-linear, and the second binding electrode 19 includes a first sub-section 191 and a second sub-section 192 extending in different directions.
  • the third gap J3 includes a third type gap area 17, and a plurality of third type gap areas 17.
  • Each third type gap area 17 in the gap area 17 includes a third sub-gap area 171 and a fourth sub-gap area 172 , and the third sub-gap area 171 of each third type gap area 17 is larger than the third type gap area 17 .
  • the fourth sub-gap region 172 of the gap region 17 is closer to the selected side 11 cc of the substrate 11 .
  • the size t1 of the third sub-gap region 171 of each third type gap region 17 along the first direction X is smaller than the size t2 of the fourth sub-gap region 172 of the third type gap region 17 along the first direction X.
  • the laser Laser2 etches the second part of the conductive layer to form the second part of a plurality of connecting leads. Since the portion of the second sub-portions of the plurality of second binding electrodes close to the selected side of the substrate is covered by the second main body portion of the second mask, when the laser etch the portion corresponding to the third etching area K3 After etching and removal, the laser is blocked by the second main part of the second mask, thereby avoiding the problem that the second sub-part 192 of the second binding electrode 19 is damaged by the residual energy of the laser.
  • the second mask also includes second fingers, and the conductive layers formed on the plurality of second fingers can be removed together with the removal of the second mask, so that there is no need to remove the conductive layer (the second finger).
  • the fourth sub-gap region 172 of the third gap can be formed by laser etching the four sub-etching regions K32), and the size of the fourth sub-gap region 172 is consistent with the size of the second finger, thereby saving the laser etching step. , reducing the laser etching range and improving production efficiency.
  • the third part of the finally obtained plurality of connecting leads has structural features corresponding to the second mask, adjacent third parts are separated by third gaps, and the third sub-gap area of each third type gap area 17
  • the size of the fourth sub-gap region 172 of the third type gap region 17 along the first direction X is smaller than the size of the fourth sub-gap region 172 of the third type gap region 17 along the first direction X.
  • the third portions 133 of any two adjacent connecting leads 13 among the plurality of connecting leads 13 are separated by a third type gap region 17 .
  • the third portions 133 of each two adjacent connecting leads 13 in the plurality of connecting leads 13 are separated by a third type gap area 17, corresponding to the second mask 21 in FIG. 33.
  • the second mask 21 includes a plurality of The plurality of second fingers are in one-to-one correspondence with the gaps between each two adjacent second binding electrodes, so that the resulting plurality of connecting leads 13 have the above characteristics.
  • the third gap J3 further includes a fourth type of gap area 18 , and the third type of gap area 17 and at least one fourth type of gap area 18 are alternately arranged.
  • the size t3 of the fourth type gap region 18 along the first direction X is equal to the size t1 along the first direction X of the third sub-gap region 171 of the third type gap region 17 .
  • the fourth type gap region 18 is obtained by laser etching the fourth type etching region K33 in the conductive layer 13 ′, and the third type gap region 17 is obtained by laser etching the third sub-etching region in the conductive layer 13 ′.
  • the area K31 and the fourth sub-etching area K32 are obtained. Therefore, as shown in Figures 42 and 43, the size of the fourth type of gap area 18 along the first direction X is uniform, and the size of the fourth type of gap area 18 along the The size t3 in the first direction X is equal to the size of the first sub-gap region 151 of the first type gap region 15 along the first direction
  • the third sub-gap region 171 and the fourth sub-gap region in each third-type gap region 17 The dividing line 172 is closer to the selected side 11cc than the boundary of one end of the plurality of second binding electrodes 19 close to the selected side 11cc of the substrate 11 .
  • the distance t4 between the dividing line of the third sub-gap region 171 and the fourth sub-gap region 172 and the selected side surface 11cc of the substrate 11 is smaller than the plurality of second binding electrodes.
  • the distance t9 between the dividing line of the third sub-gap area 171 and the fourth sub-gap area 172 and the side boundary of the third portion 133 of the connecting lead 13 away from the selected side surface 11cc of the substrate 11 is greater than , the distance t4 between the dividing line of the third sub-gap area 171 and the fourth sub-gap area 172 and the selected side surface 11cc.
  • the size of the first sub-gap area 151 included in the first type of gap area 15 along the second direction Y is smaller than the size of the second sub-gap area 152 included in the first type of gap area 15 along the second direction Y.
  • the second sub-gap area 152 included in the first type of gap area 15 is formed, for example, with the removal of the second finger 212 when the second mask 21 is removed.
  • the gap region 151 is formed by, for example, laser etching. It can be understood that such a design reduces the range of laser etching and further improves the preparation efficiency of the connecting leads 13 .
  • the first sub-portion 191 of the second binding electrode 19 includes a first connection sub-portion 1911 and a second connection sub-portion 1912 , and the first connection sub-portion of each first sub-portion 191 1911 is closer to the selected side surface 11cc of the substrate 11 than the second connecting sub-portion 1912 of the first sub-portion 191 .
  • the distance t4 between the boundary line of the third sub-gap region 171 and the fourth sub-gap region 172 and the selected side surface 11cc of the substrate 11 is greater than the distance t5 between the plurality of second binding electrodes 19 and the selected side surface.
  • the second connection sub-portion 1912 of the first sub-portion 191 of each second binding electrode 19 is configured to be electrically connected to the second sub-portion 192 of the second binding electrode 19 .
  • the first sub-connection portion 1911 of a sub-portion 191 is configured to be electrically connected to the third portion 133 of a connecting lead 13 .
  • the extension direction of the portion of the second binding electrode 19 close to the selected side 11cc of the substrate 11 is perpendicular to the selected side 11cc of the substrate 11, and the second binding electrode 19 is in a non-linear shape.
  • the extension direction of the portion of the electrode 19 away from the selected side surface 11cc of the substrate 11 forms a certain angle with the plane where the selected side surface 11cc of the substrate 11 is located.
  • the second binding electrode 19 has a unique width, for example, the size of the second sub-connection portion 1912 included in the first sub-portion 191 of the second binding electrode in a direction perpendicular to its extension is the same as that of the first sub-connection portion 1912 .
  • the first sub-connection portions 1911 included in the portion 191 have the same size in the direction perpendicular to its extension, then the second sub-connection portions 1912 of the first sub-portions 191 of the two adjacent second binding electrodes 19 are in contact with each other. Risk of short circuit.
  • the size of the second sub-connection portion 1912 of the first sub-portion 191 perpendicular to its extension direction is smaller than the size of the first sub-connection portion 1911 of the first sub-portion 191 perpendicular to its extension direction
  • the second sub-connection part 1912 of each first sub-part 191 is used as a transition connection part, thereby ensuring a plurality of second binding electrodes 19 while increasing the overlapping area of the second binding electrode 19 and the connection lead 13 They can be independently separated and will not cause any two second binding electrodes 19 among the plurality of second binding electrodes 19 to be connected and cause a short circuit.
  • first sub-portion 191 of each second binding electrode 19 includes a first connecting sub-portion 1911 with a size along the first direction Dimensions of X.
  • the second connecting sub-portion 1912 overlaps with the third portion 133 of the connecting lead 13 that is electrically connected thereto. It can be understood that with such a design, the overlapping area of the portion where the second binding electrode 19 is electrically connected to the connecting lead 13 is increased, so that the second binding electrode 19 and the connecting lead 13 electrically connected thereto can ensure sufficient contact, thereby ensuring the connection stability between the second binding electrode 19 and the connecting lead 13 .
  • the second connecting sub-portion 1912 of the first sub-portion 191 of the second binding electrode 19 and the second sub-portion 192 of the second binding electrode 19 have the same or substantially the same width.
  • the width of the second connecting sub-portion 1912 and the second sub-portion 192 mentioned here refers to the size of the second connecting sub-portion 1912/second sub-portion 192 perpendicular to its extending direction.
  • a plurality of second binding electrodes 19 are arranged at intervals along the first direction X.
  • the size t6 of the first sub-portion 191 of the second binding electrode 19 along the first direction X is less than or equal to the size along the first direction X of the third portion 133 of the connecting lead 13 connected to the second binding electrode 19 t7.
  • the size of the third type gap region 17 along the first direction X is less than or equal to the size of the two adjacent second binding electrodes 19 .
  • a sub-portion 191 has a spacing t8 along the first direction X.
  • the first sub-portion 191 of the binding electrode 19 is spaced t8 along the first direction X.
  • the display panel 100 further includes a light-emitting device layer G.
  • the light-emitting device layer G includes a plurality of light-emitting devices G1 and a protective film G3.
  • the display panel 100 includes at least three colors of sub-pixels P.
  • the multiple-color sub-pixels include at least a first color sub-pixel, a second color sub-pixel and a third color sub-pixel.
  • the first color, the second color sub-pixel P Color and tertiary colors are the three primary colors (such as red, green and blue).
  • each sub-pixel P includes at least one light-emitting device G1.
  • the protective film G3 includes a portion covering the plurality of light-emitting devices G1 and a portion filling gap regions of the plurality of light-emitting devices G1 .
  • the material of the protective film G3 may be black silicone or black resin.
  • the protective film G3 can protect the plurality of light-emitting devices G1 and prevent the plurality of light-emitting devices G1 from being damaged during the process after forming the light-emitting devices G1.
  • the light-emitting device G1 includes but is not limited to OLED (Organic Light-Emitting Diode), Mini LED (Mini Light-Emitting Diode), Micro LED (Micro Light-Emitting Diode), etc.
  • OLED Organic Light-Emitting Diode
  • Mini LED Mini Light-Emitting Diode
  • Micro LED Micro Light-Emitting Diode
  • a display device 1000 is provided, as shown in FIG. 45 , comprising: a display panel 100 as described in any of the above embodiments.
  • Mini light-emitting diodes or micro light-emitting diodes are used as the light-emitting device G1. Compared with traditional LEDs, they occupy a smaller volume and have smaller particles. Within the same screen size, the light source density per unit area is higher and the light source unit size is smaller. Therefore, more precise local control of the light-emitting device G1 can be achieved, and the problem of uneven brightness of the light-emitting device G1 will not occur, and the uniformity of the display brightness can be ensured, thereby ensuring the display quality of the display device 1000 .
  • the display device 1000 further includes an integrated circuit chip and a flexible circuit board F.
  • the integrated circuit chip is configured to be electrically connected to the flexible circuit board F, send the control signal through the integrated circuit chip, and then transmit the driving signal to the plurality of connection leads 13 through the flexible circuit board F, and through the plurality of connection leads 13 passed to the plurality of first binding electrodes 12 .
  • the plurality of first binding electrodes 12 are configured to achieve electrical connection with the driving circuit layer 14 .
  • the driving circuit layer 14 includes, for example, a plurality of signal lines and other structures.
  • the driving circuit layer 14 is coupled to the light-emitting device layer G and is configured to drive the light-emitting device layer G to emit light.
  • the first bonding electrode 12 receives the driving signal transmitted by the plurality of connection leads 13 and transmits the driving signal to the driving circuit layer 14, thereby controlling the light emitting device layer G to emit light, so that the display device 1000 displays a picture.
  • the light emitting device layer G further includes a pixel driving chip G2.
  • the driving circuit layer 14 can also be connected to the pixel driving chip G2, so that the pixel driving chip G2 controls the luminance of the light-emitting device G1.
  • three light-emitting devices G1 may be driven and controlled by one pixel driving chip G2, which is not limited and is only used as an example of a possible implementation.
  • a splicing display device 10000 is provided, as shown in FIG. 46 , including: a plurality of display devices 1000 as described in any of the above embodiments.
  • the multiple display devices 1000 in the spliced display device 10000 are arranged in an array.
  • the display device 1000 is, for example, rectangular.
  • the display device 1000 includes a plurality of side surfaces. In the following description, the side surface close to the peripheral area AN of the substrate 11 among the multiple side surfaces of the display device 1000 will be referred to as a selected side surface of the display device 1000 .
  • the display panel 100 includes a display area AA and a peripheral area AN located on one side of the display area AA.
  • a plurality of connecting leads 13 and a plurality of first binding electrodes 12 are close to the substrate 11 Peripheral area AN settings.
  • the size of the splicing gap between two adjacent display devices is smaller than that of the multiple display devices arranged in a row along the second direction Y.
  • the size of the splicing gap between two adjacent display devices 1000 in 1000 is very small. Therefore, when the splicing display device 10000 is actually viewed, the splicing seam between two adjacent display devices 1000 is difficult to detect with the naked eye within the viewing distance, thus making the splicing
  • the display screen of the display device 10000 is relatively complete and can present a better display effect.

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Abstract

一种显示面板、显示装置及拼接显示装置。显示面板包括基板、驱动线路层、多个第一绑定电极、多条连接引线。基板包括相对的第一表面和第二表面以及多个侧面，多个侧面中的至少一个侧面为选定侧面。多条连接引线包括位于第一表面一侧的第一部、位于选定侧面一侧的第二部和位于第二表面一侧的第三部。相邻的两条连接引线的第一部由第一间隙间隔。第一间隙包括第一类间隙区域，第一类间隙区域包括第一子间隙区域和第二子间隙区域，第一子间隙区域相对于第二子间隙区域更靠近选定侧面。第一子间隙区域沿第一方向上的尺寸小于第二子间隙区域沿第一方向上的尺寸。

Description

显示面板、显示装置及拼接显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板、显示装置及拼接显示装置。
背景技术
Micro LED(Micro Light Emitting Diode，微发光二极管)及Mini LED(Mini Light Emitting Diode Display，迷你发光二极管)相较于传统LED，颗粒更小，即体积更小。
发明内容
一方面，提供一种显示面板，包括：基板、驱动线路层、多个第一绑定电极、多条连接引线。基板包括第一表面、第二表面以及连接第一表面和第二表面的多个侧面，多个侧面中的至少一个侧面为选定侧面。基板的第一表面包括显示区和位于显示区至少一侧的周边区，周边区相较于显示区更靠近基板的选定侧面。驱动线路层设置于显示区的。多个第一绑定电极沿第一方向间隔排布，设置于周边区。第一方向平行于基板的选定侧面和基板的第一表面。
多条连接引线沿第一方向间隔排布的。多条连接引线中的每条连接引线包括位于基板的第一表面一侧的第一部、位于基板的选定侧面一侧的第二部和位于基板的第二表面一侧的第三部。每条连接引线的第一部与一个第一绑定电极电连接。
相邻两条连接引线的第一部由第一间隙间隔，第一间隙包括第一类间隙区域。第一类间隙区域包括第一子间隙区域和第二子间隙区域，每个第一类间隙区域的第一子间隙区域相对于每个第一类间隙区域的第二子间隙区域更靠近基板的选定侧面。每个第一类间隙区域的第一子间隙区域沿第一方向上的尺寸小于该第一类间隙区域的第二子间隙区域沿第一方向上的尺寸。
在一些实施例中，每个第一类间隙区域的第一子间隙区域沿第二方向上的尺寸小于或者等于该第一类间隙区域的第二子间隙区域沿第二方向上的尺寸。第二方向与连接引线的第一部的延伸方向平行。
在一些实施例中，每个第一类间隙区域的第一子间隙区域和第二子间隙区域沿第一方向上的尺寸之差的范围为0～100μm。
在一些实施例中，多条连接引线中的任意两条相邻的连接引线的第一部由第一类间隙区域间隔。
在一些实施例中，第一间隙还包括第二类间隙区域，第二类间隙区域沿第 一方向上的尺寸等于第一类间隙区域的第一子间隙区域沿第一方向上的尺寸。
在一些实施例中，第一类间隙区域和至少一个第二类间隙区域交替设置。
在一些实施例中，多个第一类间隙区域中，每个第一类间隙区域中的第一子间隙区域和第二子间隙区域的分界线，相较于多个第一绑定电极靠近基板的选定侧面的一端的边界，更靠近基板的选定侧面。
在一些实施例中，多个第一绑定电极沿第一方向并列间隔排布。第一绑定电极沿第一方向上的尺寸小于或者等于与该第一绑定电极连接的连接引线的第一部沿第一方向上的尺寸。
在一些实施例中，第一类间隙区域沿第一方向上的尺寸小于或者等于与其相邻的两个第一绑定电极沿第一方向上的间距。
在一些实施例中，显示面板还包括：多个第二绑定电极。多个第二绑定电极设置于基板的第二表面一侧，且沿第一方向间隔排布。每个第二绑定电极包括第一子部和第二子部，每个第二绑定电极的第一子部相较于第二子部更靠近基板的选定侧面。每条连接引线的第三部与一个第二绑定电极的第一子部电连接。第二绑定电极的第一子部的延伸方向和与其电连接的连接引线的第三部的延伸方向相同。
相邻两条连接引线的第三部之间由第三间隙间隔，第三间隙包括第三类间隙区域，多个第三类间隙区域中的每个第三类间隙区域包括第三子间隙区域和第四子间隙区域，每个第三类间隙区域的第三子间隙区域相较于该第三类间隙区域的第四子间隙区域更靠近基板的选定侧面。每个第三类间隙区域的第三子间隙区域沿第一方向上的尺寸小于该第三类间隙区域的第四子间隙区域沿第一方向上的尺寸。
在一些实施例中，多条连接引线中的任意两条相邻的连接引线的第三部由第三类间隙区域间隔。
在一些实施例中，第三间隙还包括第四类间隙区域，第三类间隙区域和至少一个第四类间隙区域交替设置。第四类间隙区域沿第一方向上的尺寸等于第三类间隙区域的第三子间隙区域沿第一方向上的尺寸。
在一些实施例中，多个第三类间隙区域中，每个第三类间隙区域中的第三子间隙区域和第四子间隙区域的分界线，相较于多个第二绑定电极靠近基板的选定侧面的一端的边界，更靠近选定侧面。
在一些实施例中，多个第二绑定电极沿第一方向间隔排布。第二绑定电极沿第一方向上的尺寸小于或者等于与该第二绑定电极连接的连接引线的第三部沿第一方向上的尺寸。
在一些实施例中，第三类间隙区域的沿第一方向上的尺寸小于或者等于与其相邻的两个第二绑定电极的第一子部沿第一方向上的间距。
另一方面，提供一种显示装置，包括：如上述任一实施例所述的显示面板。
又一方面，提供一种拼接显示装置，包括：多个如上述任一实施例所述的显示装置。
再一方面，提供一种显示面板的制备方法，包括：
提供基板。其中，基板包括第一表面、第二表面以及连接第一表面和第二表面的多个侧面，多个侧面中的至少一个侧面为选定侧面。基板的第一表面包括显示区和位于显示区至少一侧的周边区，周边区相较于显示区更靠近基板的选定侧面。
在基板的第一表面一侧形成阵列层。其中，在基板的第一表面一侧形成阵列层包括：在显示区形成驱动线路层。
在基板的第一表面一侧设置第一掩膜版。其中，第一掩膜版至少包括第一主体部，第一主体部至少包覆驱动线路层靠近基板的选定侧面的部分。
形成导电层。其中，导电层包括：位于基板的第一表面一侧的第一部分、位于基板的选定侧面一侧的第二部分和位于基板的第二表面一侧的第三部分。
采用激光刻蚀图案化导电层，形成并列间隔排布的多条连接引线。其中多条连接引线中的每条连接引线包括位于基板的第一表面一侧的第一部、位于基板的选定侧面一侧的第二部和位于基板的第二表面一侧的第三部。激光刻蚀导电层形成多条连接引线包括：至少激光刻蚀导电层的第二部分形成多条连接引线的第二部。
去除第一掩膜版。
在一些实施例中，在基板的第一表面一侧形成阵列层还包括：在周边区形成多个第一绑定电极。其中，多个第一绑定电极沿第一方向间隔排布，且每个第一绑定电极沿第二方向延伸。周边区沿第一方向延伸。第一方向与第二方向交叉。
在基板的第一表面一侧设置第一掩膜版的步骤中，第一掩膜版的第一主体部还包覆多个第一绑定电极靠近显示区的部分。
在一些实施例中，在基板的第一表面一侧设置第一掩膜版的步骤中，第一掩膜版还包括多个第一指部。多个第一指部的第一端连接第一主体部，多个第一指部的第二端朝向基板的选定侧面延伸，第一掩膜版的多个第一指部相较于第一主体部更靠近基板的选定侧面。
每个第一指部位于相邻的两个第一绑定电极之间的间隙区域。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1A为根据一些实施例的显示面板的截面图；
图1B为根据另一些实施例的显示面板的截面图；
图1C为根据一些实施例的驱动线路层的平面结构图；
图1D为根据一些实施例的驱动线路层的截面结构图；
图2为根据一些实施例的显示面板的制备方法的流程图；
图3～图13为根据一些实施例的显示面板的制备方法的步骤图；
图14为根据另一些实施例的显示面板的制备方法的流程图；
图15为根据又一些实施例的显示面板的制备方法的流程图；
图16～图26为根据另一些实施例的显示面板的制备方法的步骤图；
图27～图35为根据又一些实施例的显示面板的制备方法的流程图；
图36为在发光器件层上设置一种第一掩膜版的示意图；
图37为在发光器件层上设置另一种第一掩膜版的示意图；
图38为根据图36中截面线GG得到的截面图；
图39为根据图36中截面线HH得到的截面图；
图40为根据一些实施例的一种显示面板的正面结构图；
图41为根据另一些实施例的一种显示面板的正面结构图；
图42为根据一些实施例的一种显示面板的背面结构图；
图43为根据另一些实施例的一种显示面板的背面结构图；
图44为根据又一些实施例的一种显示面板的背正面结构图；
图45为根据一些实施例的一种显示装置的结构图；
图46为根据一些实施例的一种拼接显示装置的结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括 (comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“耦接”和“连接”及其衍伸的表达。例如，描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如，描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而，术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触，但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
如本文所使用的那样，“约”、“大致”或“近似”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
如本文所使用的那样，“平行”、“垂直”、“相等”包括所阐述的情况以及与所阐述的情况相近似的情况，该相近似的情况的范围处于可接受偏差范围内，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以 及与特定量的测量相关的误差(即，测量系统的局限性)所确定。例如，“平行”包括绝对平行和近似平行，其中近似平行的可接受偏差范围例如可以是5°以内偏差；“垂直”包括绝对垂直和近似垂直，其中近似垂直的可接受偏差范围例如也可以是5°以内偏差。“相等”包括绝对相等和近似相等，其中近似相等的可接受偏差范围内例如可以是相等的两者之间的差值小于或等于其中任一者的5％。
应当理解的是，当层或元件被称为在另一层或基板上时，可以是该层或元件直接在另一层或基板上，或者也可以是该层或元件与另一层或基板之间存在中间层。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层的厚度和区域的面积。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
为提高产品可靠性，以及降低运输成本、维修成本，大尺寸显示装置可以采用多个小尺寸显示装置拼接的方法来组装形成。
为了避免拼接带来的显示画面割裂感，需要减小单个小尺寸显示装置的边框尺寸，降低拼缝宽度。小尺寸显示装置包括显示面板，例如可以通过连接引线将位于显示面板的显示面一侧的走线与设置在显示面板的非显示面一侧的电路板(例如柔性电路板)实现连接，从而在多个小尺寸显示装置拼接形成更大尺寸的大尺寸显示装置时，相邻的小尺寸显示装置之间的间距可以更小，从而使得多个小尺寸显示装置拼接形成的大尺寸显示装置的显示质量得以提升。
在一些实施例中，如图1A、图1B所示，显示面板包括基板11、多个第一绑定电极12和多条连接引线13。基板11包括相对的第一表面11a和第二表面11b以及连接第一表面11a和第二表面11b的多个侧面11c，基板11的多个侧面11c中的至少一个侧面11c为选定侧面11cc。每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。
其中，基板11的第一表面11a一侧设置有发光器件层G，为显示面板的正面；相应地，基板11的第二表面11b一侧为显示面板的背面。基板11的 第一表面11a包括显示区AA，在显示区AA设置有驱动线路层14等膜层结构。连接引线13的第一部131和第三部133均沿垂直于基板11的选定侧面11cc的方向，例如图1A、图1B所示的Y方向延伸。
具体地，如图1C、图1D所示，驱动线路层14包括自基板11依次设置的：缓冲层141、第一金属层142、绝缘层143、第二金属层144、平坦层145和钝化层146。
其中，缓冲层141设置于基板11的第一表面11a一侧。第一金属层142设置于缓冲层141远离基板11一侧，第一金属层142包括多条第一信号线1421。绝缘层143设置于第一金属层142远离基板11一侧。第二金属层144设置于绝缘层143远离基板11一侧，第二金属层144包括多个第一绑定电极12，以及多条第二信号线1441。平坦层145设置于第二金属层144远离基板11一侧。钝化层146设置于平坦层145远离基板11一侧。可以理解的是，第一绑定电极12和与其直接接触第二信号线为一体结构，且第一绑定电极为位于周边区且被平坦层145和钝化层146的暴露出来的区域。
第一信号线1421包括沿Y方向延伸的多条数据线Dm、多条第一正极信号线Hm1、多条第二正极信号线Hm2、多条参考信号线Vm和多条扫描信号转接线Cn。所述第二金属层144包括多条扫描信号线Sn，每条扫描信号线Sn与一条扫描信号转接线Cn电连接。多条扫描信号线Sn沿X方向延伸。示例性地，在阵列排布的多个像素(例如每个像素包括沿Y方向排布的三个发光器件G1，以及用于向三个发光器件G1提供信号的驱动芯片G2)中，每一行像素与同一条扫描信号线Sn电连接，每一列像素与一条数据信号线Dm、一条参考信号线Vm、一条第一正极信号线Hm1和一条第二正极信号线Hm2电连接，以实现合理布线，通过多条信号线向像素传输相应的信号。
在一些实施例中，如图1C和图1D所示，第二金属层144还包括多个连接焊盘，多个连接焊盘包括用于连接发光器件G1的多个第一焊盘1442和用于连接像素驱动芯片G2的多个第二焊盘1443。
具体地，如图1D所示，发光器件G1的引脚和像素驱动芯片G2的引脚通过焊接材料S(例如焊锡、锡银铜合金、锡铜合金等)与对应的连接焊盘连接。平坦层145包括多个第二过孔a2，多个第二过孔a2贯穿至第二金属层144。钝化层146包括多个第三过孔a3，多个第三过孔a3贯穿至平坦层145。其中，一个第三过孔a3和一个第二过孔a2位置对应，形成由钝化层146贯穿至第二金属层144的连接焊盘的贯穿过孔。
示例性地，如图1C、图1D所示，每个发光器件G1包括两个连接引脚， 每个像素驱动芯片G2包括六个连接引脚，每个发光器件G1的引脚通过贯穿平坦层145和钝化层146的贯穿过孔与两个第一焊盘1442连接，每个像素驱动芯片G2的引脚通过贯穿平坦层145和钝化层146的过孔与六个第二焊盘1443连接，从而在信号线(第一信号线1421和/或第二信号线1441)传输的信号以及像素驱动芯片G2的控制下，控制发光器件G1发光。可以理解的是，任一连接焊盘和与其直接接触第二信号线1441为一体结构，且连接焊盘为第二信号线1441被平坦层145和钝化层146的暴露出来的区域。
如图1C、图1D所示，图中所示的边界线B为平坦层145和钝化层146靠近基板11的选定侧面11cc的边界线。平坦层145和钝化层146靠近基板11的选定侧面11cc的边界线B在基板11上的正投影与基板11的选定侧面11cc之间的距离为L1。多个第一绑定电极12沿第一方向X并列间隔排布，且多个第一绑定电极12靠近基板11的选定侧面11cc的边界齐平或者大致齐平，第一绑定电极12靠近基板11的选定侧面11cc的边界在基板11上的正投影与基板11的选定侧面11cc之间的距离为L2。
其中，L1大于L2，且L1与L2的差值的绝对值的范围为50～80μm。
示例性地，L1与L2的差值的绝对值例如为50μm、70μm或者80μm。
如图1C所示，多个第一绑定电极12位于第二金属层144内，且多个第一绑定电极12的宽度(沿第一方向X的尺寸)不同，且每个第一绑定电极12的宽度与其所电连接的信号线，如图1C所示，例如为第二信号线1441的宽度对应，不同宽度的信号线所电连接的第一绑定电极12的宽度不同。
在一些实施例中，第一金属层142或第二金属层144为包含多个叠层结构的金属层。例如第一金属层142或第二金属层144包括自基板11一侧依次设置的钛层、铜层、钛层。或者第一金属层142或第二金属层144例如包括自基板11一侧依次设置的钼层、铜层、钼层。或者，第一金属层142或第二金属层144例如包括自基板11一侧依次设置的钼层、铝层、钼层。
在一些实施例中，第一金属层142或第二金属层144为单层结构的信号走线层。进一步地，驱动线路层14例如为铜层或铝层等。
具体地，第一金属层142或第二金属层144需要具备良好的导电性能即可，此处仅做示例性描述，不作为对驱动线路层14所采用的材料的限定。
在一些实施例中，多个第一绑定电极12中的各个第一绑定电极12与驱动线路层14中对应连接的信号线(例如多条第一信号线1421和多条第二信号线1441)为一体结构，其中，第一绑定电极12位于周边区AN且表面裸露。
由于第一绑定电极12的表面裸露，因此，在第一绑定电极12远离基板 11的一侧可以进一步设置防氧化层(材料可以包含镍金属，具体可以为含镍的合金，或者镍层和金层的层叠结构)，防止在工艺过程中膜层氧化而导致后续制备过程中，第一绑定电极12与连接引线13的不可靠电连接。
每条连接引线13的第一部131通过一个第一绑定电极12与一条第一信号线1421连接，示例性地，第一绑定电极12在沿第一方向X上的尺寸与其所属于的第一信号线1421在沿第一方向X上的尺寸相适配，连接引线13的第一部131与其所连接的第一绑定电极12在沿第一方向X上的尺寸正相关。如图1C所示，驱动线路层14包括的多条不同功能的第一信号线1421在第一方向X上的尺寸不同，可以理解的是，与不同功能的第一信号线1421对应的多个第一绑定电极12在沿第一方向X上的尺寸适应性地不同，相应地，分别通过不同第一绑定电极与不同功能的第一信号线1421连接的多条连接引线13(或连接引线13的第一部131)的在沿第一方向X上的尺寸不同。
需要说明的是，为简化示意，说明书附图中将多个第一绑定电极12沿第一方向X的尺寸示意为相同，本领域的技术人员可以理解，应不限于此，多个第一绑定电极12沿第一方向X的尺寸可以不同。
相应地，多条连接引线13(或连接引线13的第一部131)沿第一方向X上的尺寸可以相同或者不同。
在一些实施例中，如图1A所示，多条连接引线13的第三部133被配置为连接位于基板11的第二表面11b一侧的电路板，例如多条连接引线13的第三部133的远离选定侧面11cc的端部作为连接柔性电路板F的绑定电极，也就是说多条连接引线13的第三部133需要预留较大位置进行外部线路绑定。
如图1B所示，显示面板还包括多个第二绑定电极19，多个第二绑定电极19的一端与连接引线电连接，另一端被配置为连接位于基板11的第二表面11b一侧的电路板。
在一些示例中，多条连接引线13的制备工艺如下：在基板11的选定侧面11cc形成连接基板11的第一表面11a和第二表面11b的整面的导电层，例如通过立体溅射镀膜工艺形成导电层，具体地，导电层包括位于基板11的第一表面11a一侧的第一部分、位于基板11的选定侧面11cc一侧的第二部分和位于基板11的第二表面11b一侧的第三部分。接着，通过激光工艺修整，将导电层图案化，使其形成连接基板11的第一表面11a和第二表面11b的独立的多条连接引线13。
可以理解的是，每条连接引线13包括位于基板11的第一表面11a一侧 的第一部131、位于基板11的选定侧面11cc上的第二部132和位于基板11的第二表面11b一侧的第三部133。
在垂直于基板11的第一表面11a的方向上，例如图1A、图1B中所示的Z方向，连接引线13的第一部131的尺寸小于显示区AA内的膜层结构的尺寸，即连接引线13的第一部131的厚度d2小于显示区AA内的膜层的厚度d1。这样在实际激光工艺过程中，在刻蚀得到连接引线13的第二部132的过程中，激光可能会自基板11的选定侧面11cc一侧入射到第一表面11a的显示区AA内，造成显示面板的正面膜层的损伤。
请参阅图1A、图1B，在激光刻蚀形成多条连接引线13的第二部132时，激光Laser2沿图中所示的方向照射向导电层，由于连接引线13的第一部131在基板11上的厚度d2小于显示区AA内膜层厚度d1，因此激光的部分能量会到达显示区AA并对该区域内的膜层和器件造成损伤，导致局部腐蚀、发光器件无法点亮等信赖性问题。
本申请中，连接引线13由激光分别由三个方向照射并刻蚀导电层形成，以下说明中，激光Laser1为由显示面板的第一表面一侧射向显示面板的激光，激光Laser2为由显示面板的选定侧面一侧射向显示面板的激光，激光Laser3为由显示面板的第二表面一侧射向显示面板的激光。
在一些实施例中，如图1A、图1B所示，驱动线路层14远离基板11的一侧设置有发光器件层G，发光器件层G包括多个发光器件G1，驱动线路层14包括信号走线，被配置为向发光器件G1传输信号，驱动发光器件层G中的多个发光器件G1发光。
在采用激光刻蚀连接引线13的第二部132时，正面的驱动线路层14包括的信号走线受到激光照射后，会导致信号走线被激光照射到的部分被激光刻蚀去除或受到损伤，从而影响信号正常传输。多个发光器件G1受到激光照射后会导致发光器件G1的特性发生改变，使得发光器件G1的发光效果不能达到预期效果，例如发光器件G1无法正常发光或者发光亮度、颜色等产生变化，从而影响显示效果。上述提到的激光损伤显示面板的正面膜层，包括损伤驱动线路层14和发光器件层G。
上述制备工艺，例如溅射镀膜工艺和激光工艺等仅作为示例性描述，不作为对实际生产工艺的限定。
基于此，本公开的实施例提供了一种显示面板及其制备方法，以解决上述提到的激光损伤显示面板的正面膜层的问题，为清楚说明本公开的方案，首先介绍显示面板的制备方法。
如图2所示，显示面板的制备方法包括：
S11、提供基板11。
其中，如图1A、图1B、图3所示，基板11包括第一表面11a、第二表面11b以及连接第一表面11a和第二表面11b的多个侧面11c，多个侧面11c中的至少一个侧面为选定侧面11cc。第一表面11a包括显示区AA和位于显示区AA至少一侧的周边区AN，周边区AN相较于显示区AA更靠近基板11的选定侧面11cc。
在一些示例中，基板11的材料例如为玻璃、石英、塑料等刚性材料。
在另一些示例中，基板11的材料例如为FPC(Flexible Printed Circuit Board，柔性印刷电路板)、PI基膜(Polyimide Film，聚酰亚胺薄膜)等柔性材料。
S21、在基板11的第一表面11a一侧形成阵列层。
其中，如图4所示，在基板11的第一表面11a一侧形成阵列层包括：在显示区AA形成驱动线路层14。
S31、在基板11的第一表面11a一侧设置第一掩膜版20。
其中，如图5所示，第一掩膜版20至少包括第一主体部201，第一主体部201至少包覆驱动线路层14靠近基板11的选定侧面11cc的部分。
S41、形成导电层13’。
其中，如图6～图9所示，导电层13’包括：位于基板11的第一表面11a一侧的第一部分13’1、位于基板11的选定侧面11cc一侧的第二部分13’2和位于基板11的第二表面11b一侧的第三部分13’3。
图7和图8分别为沿图6中的截面线CC和DD得到的截面图，可见，第一掩膜版20和导电层13’不接触，二者之间具有一定距离。
在上述步骤中，导电层13’例如采用立体溅射镀膜工艺形成。
S51、采用激光刻蚀图案化导电层13’，形成并列间隔排布的多条连接引线13。
其中，如图1A、图1B所示，多条连接引线13中的每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。
激光刻蚀导电层13’形成多条连接引线13包括：如图10、图11所示，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
在上述步骤中，如图6～图8所示，导电层13’的第一部分13’1与第一掩膜版20的第一主体部201无交叠。
在上述步骤中，激光刻蚀导电层13’形成的多条连接引线13是独立分隔 开的，多条连接引线13中的任意两条连接引线13之间都存在间隙。将激光刻蚀的过程中导电层13’被激光刻蚀去除的部分所对应的区域称为刻蚀区，示例性地，如图6、图9～图11所示，导电层13’的第一部分13’1包括多个第一刻蚀区K1，导电层13’的第二部分13’2包括多个第二刻蚀区K2，导电层13’的第三部分13’3包括多个第三刻蚀区K3。
当刻蚀区(例如图6中所示的多个第一刻蚀区K1、多个第二刻蚀区K2，以及图9中所示的多个第三刻蚀区K3)对应的部分被刻蚀去除后，得到的相邻的连接引线13之间的间隔即为相邻的连接引线13之间的间隙。
S61、去除第一掩膜版20。
图12A、图12B和图13为在去除第一掩膜版20后，最终得到多条连接引线13在基板11的第一表面11a的示意图和在基板11的第二表面11b的示意图。
采用上述显示面板的制备方法，在第一表面11a的显示区AA形成驱动线路层14，接着在基板11的第一表面11a一侧设置第一掩膜版20，将驱动线路层14靠近基板11的选定侧面11cc的部分的包覆其中。这样，在采用激光刻蚀图案化导电层13’的过程中，激光Laser2沿图11中所示的方向照射向导电层13’，虽然连接引线13的第一部131在基板11上的厚度d2小于显示区AA内膜层厚度d1，但由于第一掩膜版20将驱动线路层14靠近基板11的选定侧面11cc的部分包覆其中，使得激光Laser2沿图11中所示的方向照射向导电层13’时，射向驱动线路层14的激光被第一掩膜版20的主体部201遮挡，对驱动线路层14起到了保护作用，避免了激光对驱动线路层14造成损伤。从而避免了驱动线路层14受到激光照射后导致被配置为传输电路信号的部分线路被激光刻蚀去除或损伤，从而影响电路信号正常传输的问题，进而提高了显示面板的信赖性。
示例性地，如图6所示，多个第一刻蚀区K1中的每个第一刻蚀区K1均包括第一子刻蚀区K11和第二子刻蚀区K12，每个第一刻蚀区K1的第一子刻蚀区K11相较于该第一刻蚀区K1的第二子刻蚀区K12更靠近基板11的选定侧面11cc。
如图12A和图12B所示，每个第一子刻蚀区K11对应的部分被刻蚀去除后形成的间隙区域为第一子间隙区域151，每个第二子刻蚀区K12对应的部分被刻蚀去除后形成的间隙区域为第二子间隙区域152。可以理解的是，每个第一刻蚀区K1被刻蚀去除后得到的第一间隙J1包括第一子间隙区域151和第二子间隙区域152。每个第一间隙J1包括的第一子间隙区域151相较于该 第一间隙J1包括的第二子间隙区域152更靠近基板11的选定侧面11cc。
示例性地，如图9所示，多个第三刻蚀区K3中的每个第三刻蚀区K3均包括第三子刻蚀区K31和第四子刻蚀区K32，每个第三刻蚀区K3的第三子刻蚀区K31相较于该第三刻蚀区K3的第四子刻蚀区K32更靠近基板11的选定侧面11cc。
如图13所示，每个第三子刻蚀区K31对应的部分被刻蚀去除后形成的间隙区域为第三子间隙区域171，每个第四子刻蚀区K32对应的部分被刻蚀去除后形成的间隙区域为第四子间隙区域172。可以理解的是，每个第三刻蚀区K3被刻蚀去除后得到的第三间隙J3包括第三子间隙区域171和第四子间隙区域172，每个第三间隙J3包括的第三子间隙区域171相较于该第三间隙J3包括的第四子间隙区域172更靠近基板11的选定侧面11cc。
如图6和图9所示，采用激光刻蚀图案化导电层13’，形成并列间隔排布的完整的多条连接引线13的过程包括：将导电层13’的多个与第一刻蚀区K1对应的部分通过激光刻蚀去除后，得到多条连接引线13的第一部131，相邻的两条连接引线13的第一部131被一个第一间隙J1间隔；将导电层13’的多个与第二刻蚀区K2对应的部分通过激光刻蚀去除后，得到多条连接引线13的第二部132，相邻的两条连接引线13的第二部132被一个第二间隙J2间隔；将导电层13’的多个与第三刻蚀区K3对应的部分通过激光刻蚀去除后，得到多条连接引线13的第三部133，相邻的两条连接引线13的第三部133被一个第三间隙J3间隔。
可以理解的是，将导电层13’的多个与第一刻蚀区K1、多个第二刻蚀区K2和多个第三刻蚀区K3对应的部分全部去除后才能够得到完整的多条连接引线13。
示例性地，激光Laser1照射向导电层13’，对导电层的多个第一刻蚀区K1进行刻蚀，从而形成多条连接引线13的第一部131。激光Laser2照射向导电层13’，对导电层的多个第二刻蚀区K2进行刻蚀，从而形成多条连接引线13的第二部132。激光Laser3照射向导电层13’，对导电层的多个第三刻蚀区K3进行刻蚀，从而形成多条连接引线13的第三部133。
在一些示例中，激光Laser1、Laser2、Laser3分别从不同的方向同时对导电层13’的多个与第一刻蚀区K1、多个第二刻蚀区K2和多个第三刻蚀区K3对应的部分进行刻蚀，将导电层13’图案化，从而得到如图12A、图12B和图13中所示的多条连接引线13。
需要说明的是，以上仅作为对一种可能的实施方式的举例说明，激光对导 电层13’的多个与第一刻蚀区K1、多个第二刻蚀区K2和多个第三刻蚀区K3对应的部分的刻蚀顺序不做要求。
以下以激光Laser1、Laser2和Laser3分别从不同方向刻蚀导电层13’，形成多条连接引线13为例进行具体说明。
示例性地，在激光刻蚀图案化导电层13’，形成多条连接引线13的步骤中，激光Laser2先照射向导电层13’，将导电层13’的第二部分13’2的多个第二刻蚀区K2对应的部分刻蚀去除，从而形成多条连接引线13的第二部132。接着，激光Laser1和Laser3分时或者同时分别从不同方向照射向导电层13’，将导电层13’的第一部分13’1的多个第一刻蚀区K1对应的部分和第三部分13’3的多个第三刻蚀区K3对应的部分刻蚀去除，从而形成多条连接引线13的第一部131和第三部133。
激光刻蚀导电层13’的第二部分13’2的多个第二刻蚀区K2对应的部分时，激光自基板11的选定侧面11cc的一侧朝向基板11的选定侧面11cc发射，激光将多个第二刻蚀区K2对应的部分刻蚀去除后，导电层13’的第一部分13’1靠近基板11的选定侧面11cc的部分，和/或导电层13’的第三部分13’3靠近基板11的选定侧面11cc的部分会被激光的残余能量刻蚀去除。
也就是说，在S51中，形成多条连接引线13的第二部132时，如图10、图11所示，导电层13’的多个与第一子刻蚀区K11对应的部分被激光的残余能量刻蚀去除；导电层13’的多个与第三子刻蚀区K31对应的部分被激光的残余能量刻蚀去除。
可以理解的是，在这种情况下，导电层13’的第一部分13’1需要被刻蚀去除的部分和导电层13’的第三部分13’3需要被刻蚀去除的部分是分两次分别刻蚀去除的，其靠近基板11的选定侧面11cc的部分(例如第一刻蚀区K1中的第一子刻蚀区K11对应的部分以及第三刻蚀区K3中的第三子刻蚀区K31对应的部分)在形成多条连接引线13的第二部132时被刻蚀去除，其余需要刻蚀的部分是通过另外的步骤刻蚀去除的，因此，第一刻蚀区K1对应的部分被刻蚀去除后得到的第一间隙J1包括的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸可能相同或者不相同，第三刻蚀区K3对应的部分被刻蚀去除后得到的第三间隙J3包括的第三子间隙区域171和第四子间隙区域172沿第一方向XS上的尺寸可能相同或者不相同。
在一些实施例中，如图12A所示，相邻两条连接引线13之间的第一间隙J1包括的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸相同。
在另一些实施例中，相邻两条连接引线13之间的第一间隙J1包括的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸不同。
在一些示例中，如图12B所示，相邻两条连接引线13之间的第一间隙J1包括的第一子间隙区域151沿第一方向X上的尺寸小于该第一间隙J1包括的第二子间隙区域152沿第一方向X上的尺寸。
在另一些示例中，相邻两条连接引线13之间的第一间隙J1包括的第一子间隙区域151沿第一方向X上的尺寸大于该第一间隙J1包括的第二子间隙区域152沿第一方向X上的尺寸。
关于刻蚀去除第一刻蚀区K1对应的部分后得到的第一间隙J1和刻蚀去除第三刻蚀区K3对应的部分后得到的第三间隙J3的具体结构见后文，此处不多做介绍。
示例性地，在步骤S61之后还包括：S71、激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13。
其中，激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13包括：激光Laser1刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131和/或Laser3方向的激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
需要说明的是，在激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13的步骤中，去除第一掩膜版20的步骤在激光刻蚀导电层13’的第一部分13’1之前，激光刻蚀导电层13’的第三部分13’3和去除第一掩膜版20的步骤不分先后。
相邻的两条连接引线13的第一部131之间被第一间隙J1间隔，相邻的两条连接引线13的第二部132之间被第二间隙J2间隔，相邻的两条连接引线13的第三部133之间被第三间隙J3间隔，以下对任意相邻的两条连接引线13之间的第一间隙J1、第二间隙J2和第三间隙J3的尺寸做说明。
示例性地，第一间隙J1、第二间隙J2和第三间隙J3沿第一方向X上的尺寸可以相同或者不相同。
在一些示例中，第一间隙J1、第二间隙J2和第三间隙J3中的至少两个在沿第一方向X上的尺寸相同。例如第一间隙J1和第二间隙J2在沿第一方向X上的尺寸相同，或者第一间隙J1和第三间隙J3在沿第一方向X上的尺寸相同，或者第二间隙J2和第三间隙J3在沿第一方向X上的尺寸相同，又或者第一间隙J1、第二间隙J2和第三间隙J3在沿第一方向X上的尺寸均相同。
在另一些示例中，第二间隙J2和第一间隙J1包括的第一子间隙区域151沿第一方向X上的尺寸相同。可以理解的是，在这种情况下，第一间隙J1包括的第一子间隙区域151和第二子间隙区域152在沿第一方向X上的尺寸可以相同或者不相同。
在又一些示例中，第二间隙J2、第三间隙J3、第一子间隙区域151沿第一方向X上尺寸不同。例如第二间隙J2(或第三间隙J3)在沿第一方向X上的尺寸大于第一间隙J1包括的第一子间隙区域151在沿第一方向X上的尺寸。
在再一些实施例中，在步骤S51中，激光刻蚀导电层13’形成了完整的多条连接引线13，因此，在步骤S51和S61之后，不包括步骤S71。
在另一些实施例中，如图14所示，本公开的一些实施例提供另一种显示面板的制备方法，包括：
S12、提供基板11。
其中，如图1A、图1B和图3所示，基板11包括第一表面11a、第二表面11b以及连接第一表面11a和第二表面11b的多个侧面11c，多个侧面11c中的至少一个侧面为选定侧面11cc。第一表面11a包括显示区AA和位于显示区AA至少一侧的周边区AN，周边区AN相较于显示区AA更靠近基板11的选定侧面11cc。
S22、在基板11的第一表面11a一侧形成阵列层，包括：在显示区AA形成驱动线路层14，还包括：在周边区AN形成多个第一绑定电极12。
其中，如图4所示，多个第一绑定电极12沿第一方向X间隔排布，且每个第一绑定电极12沿第二方向Y延伸。周边区AN沿第一方向X延伸。第一方向X与第二方向Y交叉。
在上述步骤中，多个第一绑定电极12与驱动线路层14电连接。
示例性地，第一方向X垂直于第二方向Y。
示例性地，第一绑定电极12沿第二方向Y上的尺寸大于或等于50μm。
进一步地，第一绑定电极12沿第二方向Y上的尺寸范围为50～80μm。第一绑定电极沿第二方向Y上的尺寸例如为50μm、70μm或者80μm。
S32、在基板11的第一表面11a一侧设置第一掩膜版20。
其中，如图5所示，第一掩膜版20至少包括第一主体部201，第一主体部201包覆驱动线路层14靠近基板11的选定侧面11cc的部分，第一掩膜版20的第一主体部201还包覆多个第一绑定电极12靠近显示区AA的部分。
需要说明的是，为了更好的保护驱动线路层14，避免在制备连接引线13 时对驱动线路层14造成损伤，第一掩膜版20包括的第一主体部201可以将驱动线路层14完全覆盖。在这种情况下，第一主体部201仍然是覆盖多个第一绑定电极12靠近显示区AA的部分。
S42、形成导电层13’。
其中，如图6～图9所示，导电层13’包括：位于基板11的第一表面11a一侧的第一部分13’1、位于基板11的选定侧面11cc一侧的第二部分13’2和位于基板11的第二表面11b一侧的第三部分13’3。
导电层13’的第一部分13’1覆盖多个第一绑定电极12靠近基板11的选定侧面11cc的部分。
在一些实施例中，在上述步骤中，导电层13’的第一部分13’1和第一掩膜版20的第一主体部201无交叠。
可以理解的是，导电层13’的第一部分13’1与多个第一绑定电极12靠近基板11的选定侧面11cc的部分存在交叠，因此，在前述设置第一掩膜版20的步骤中，第一掩膜版20的主体部201不能将多个第一绑定电极12全部包覆其中，至少需要将第一绑定电极12与连接引线13存在交叠的部分暴露出。
导电层13’的第一部分13’1与多个第一绑定电极12靠近基板11的选定侧面11cc的部分存在交叠，该交叠部分在垂直于基板11的选定侧面11cc的方向上的尺寸范围为30～60μm。
导电层13’的第一部分13’1与多个第一绑定电极12靠近基板11的选定侧面11cc的交叠部分沿第二方向Y的尺寸例如为30μm、50μm或者60μm。
在一些实施例中，第一绑定电极12靠近显示区AA的部分被第一掩膜版20的第一主体部201覆盖，第一绑定电极12远离显示区AA的部分被导电层13’的第一部分13’1覆盖。
示例性地，第一绑定电极12被第一掩膜版20的第一主体部201覆盖的部分沿第二方向Y的尺寸的范围为30～60μm。第一绑定电极12被第一掩膜版20的第一主体部201覆盖的部分沿第二方向Y的尺寸例如为30μm、45μm或者60μm。
S52、采用激光刻蚀图案化导电层13’，形成并列间隔排布的多条连接引线13。
其中，如图1A、图1B所示，多条连接引线13中的每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。每条连接引线13的第一部131与一个第一绑定电极12电连接。
激光刻蚀导电层13’形成多条连接引线13包括：如图10、图11所示，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
在上述步骤中，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132包括的几种情况参见前文对于步骤S51的描述，此处不再赘述。
S62、去除第一掩膜版20。请参见图12A、图12B和图13。
示例性地，在步骤S62之后还包括：
S72、激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13。
其中，激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13包括：激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131和/或激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。完整的多条连接引线13如图12A、图12B和图13所示。
在上述步骤中，对于激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13包括的几种情况参见前文对于步骤S71的描述，此处不再赘述。
需要说明的是，当连接引线13的第三部133呈直线状时，且连接引线13的第三部133的延伸方向与基板11的选定侧面11cc垂直，则连接引线13的第三部133可以在激光刻蚀导电层13’的第二部分13’2形成连接引线13的第二部132时在同一步骤中一同形成。
参见图11、图13，激光Laser2沿图11中方向射向导电层13’，当激光将导电层13’的第二部分13’2的第二刻蚀区K2对应的部分刻蚀去除后，激光能够继续射向导电层13’的第三部分13’2，将导电层13’的第三刻蚀区K3对应的部分刻蚀去除，可以理解的是，在这种情况下，连接引线13的第二部分132和第三部分133时在同一步骤中形成，相邻的连接引线13的第二部132和第三部133均是通过激光刻蚀形成。
在又一些实施例中，如图15所示，本公开的一些实施例提供另一种显示面板的制备方法，包括：
S13、提供基板11。
其中，如图1A、图1B和图3所示，基板11包括第一表面11a、第二表面11b以及连接第一表面11a和第二表面11b的多个侧面11c，多个侧面11c中的至少一个侧面为选定侧面11cc。第一表面11a包括显示区AA和位于显示区AA至少一侧的周边区AN，周边区AN相较于显示区AA更靠近基板11的选定侧面11cc。
S23、在基板11的第一表面11a一侧形成阵列层，包括：在显示区AA形 成驱动线路层14，还包括：在周边区AN形成多个第一绑定电极12。
其中，如图4所示，多个第一绑定电极12沿第一方向X间隔排布，且每个第一绑定电极12沿第二方向Y延伸。周边区AN沿第一方向X延伸。第一方向X与第二方向Y交叉。
在上述步骤中，多个第一绑定电极12与驱动线路层14电连接。
示例性地，第一方向X与第二方向Y垂直。
S33、在基板11的第一表面11a一侧设置第一掩膜版20。
其中，第一掩膜版20包括第一主体部201和多个第一指部202。第一掩膜版20的多个第一指部202的第一端连接第一掩膜版20的第一主体部201，第一掩膜版20的多个第一指部202的第二端朝向基板11的选定侧面11cc延伸，第一掩膜版20的多个第一指部202相较于第一掩膜版20的第一主体部201更靠近基板11的选定侧面11cc。
如图16、图24所示，第一掩膜版20具有两种形状，多个第一指部202中的每个第一指部202位于相邻的两个第一绑定电极12之间的间隙区域。
示例性地，第一指部202沿第二方向Y的尺寸大于或者等于第一绑定电极12沿第二方向Y的尺寸。
在一些示例中，第一指部202沿第二方向Y的尺寸的范围为60μm～1mm。
第一指部202沿第二方向Y的尺寸例如为60μm、500μm或者1mm。
示例性地，在上述步骤中，如图16、图24所示，第一掩膜版20的多个第一指部202在基板11上的正投影的边界与基板11的选定侧面11cc之间具有设定距离。该设定距离例如为如图16、图24中所示的距离d3。
在一些实施例中，如图16、图24所示，第一掩膜版20的多个第一指部202在基板11上的正投影的边界与基板11的选定侧面11cc之间的距离d3的范围为0～60μm。距离d3例如为20μm、35μm或者60μm。
示例性地，在上述步骤中，如图16、图24所示，沿第一方向X上，第一掩膜版20的多个第一指部202中的每个第一指部202的尺寸d5小于或等于与其相邻的两个第一绑定电极12的间距d4。
在一些实施例中，第一掩膜版20包括的第一指部202沿第一方向X上的尺寸的范围为大于等于20μm且小于60μm。与前述第一指部202相邻的两个第一绑定电极12沿第一方向X上的间距大于或者等于30μm，且小于或者等于300μm。
S43、形成导电层13’。
其中，如图17～图19所示，导电层13’包括：位于基板11的第一表面11a 一侧的第一部分13’1、位于基板11的选定侧面11cc一侧的第二部分13’2和位于基板11的第二表面11b一侧的第三部分13’3。
导电层13’的第一部分13’1覆盖多个第一绑定电极12靠近基板11的选定侧面11cc的部分。
示例性地，在上述步骤中，如图18和图19所示，图18为根据图17中的截面线EE得到的截面图，图19为根据图17中的截面线FF得到的截面图，导电层13’的第一部分13’1和第一掩膜版20的第一主体部201无交叠，导电层13’的第一部分13’1和第一掩膜版20的第一指部202存在交叠。
S53、采用激光刻蚀图案化导电层13’，形成并列间隔排布的多条连接引线13。
其中，如图1A、图1B所示，多条连接引线13中的每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。每条连接引线13的第一部131与一个第一绑定电极12电连接。
激光刻蚀导电层13’形成多条连接引线13包括：如图20～图22所示，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
在上述步骤中，对于激光刻蚀导电层13’的形成的多条连接引线13的第一部131和第三部133的形状的描述，以及对多条连接引线13的第三部133的制备方法参加前文，此处不再赘述。
S63、如图23所示，去除第一掩膜版20。
在该步骤中，导电层的位于第一掩膜版的第一指部上的部分，随着第一掩膜版的去除而一并去除，得到如图23中的较宽的第二子间隙区域152。
采用上述显示面板的制备方法，在第一表面11a的显示区AA形成驱动线路层14，接着在基板11的第一表面11a一侧设置第一掩膜版20，将驱动线路层14靠近基板11的选定侧面11cc的部分的包覆其中。这样，在采用激光刻蚀图案化导电层13’的过程中，激光Laser2沿图23、图24、图25中所示的方向照射向导电层13’，虽然连接引线13的第一部131在基板11上的厚度d2小于显示区AA内膜层厚度d1，但由于第一掩膜版20将驱动线路层14靠近基板11的选定侧面11cc的部分包覆其中，使得激光Laser2沿图23、图24、图25中所示的方向照射向导电层13’时，射向驱动线路层14的激光被第一掩膜版20的主体部201遮挡，对驱动线路层14起到了保护作用，避免了激光对驱动线路层14造成损伤。从而避免了驱动线路层14受到激光照射后导致被配置为传输电路信号的部分线路被激光刻蚀去除或损伤，从而影响电路信 号正常传输的问题，进而提高了显示面板的信赖性。
需要说明的是，导电层13’的第一部分13’1与第一掩膜版20的第一指部202存在交叠，示例性地，如图17和图19所示，导电层13’的第一部分13’1的第二子刻蚀区K12对应的部分与第一掩膜版20的多个第一指部202存在交叠，且导电层13’的第一部分13’1的第二子刻蚀区K12对应的部分位于第一掩膜版20的多个第一指部202远离基板11的一侧。
因此，在去除第一掩膜版20时，导电层13’的第一部分13’位于第一掩膜版20的多个第一指部202远离基板11一侧的部分，可以理解的是，导电层13’的第一部分13’1的第二子刻蚀区K12对应的部分会在去除第一掩膜版20时随第一掩膜版20的多个第一指部202一起被去除。
因此，在激光刻蚀图案化导电层13’，从而形成多条连接引线13的过程中，无需对图23中所示的多个第二子刻蚀区K12刻蚀，减少了激光刻蚀范围。在显示面板的制备过程中，第一掩膜版20在起到保护显示区AA内的膜层结构的同时，还减少了激光刻蚀导电层13’的刻蚀范围，减少了激光刻蚀步骤的时间，进一步地，提高了生产效率。
在一些实施例中，如图1C、图1D和图25所示，第一子刻蚀区K11沿第二方向Y的尺寸小于平坦层145和钝化层146靠近基板11的选定侧面11cc的边界线B在基板11上的正投影与基板11的选定侧面11cc之间的距离L1。
在一些示例中，在步骤S53中，激光Laser1、Laser2、Laser3分别沿图18、图19中所示的方向同时对导电层13’的多个与第一刻蚀区K1、多个第二刻蚀区K2和多个第三刻蚀区K3对应的部分进行刻蚀，将导电层13’图案化，从而得到如图23中所示的多条连接引线13。
示例性地，显示面板包括A(A≥1，A为正整数)个沿第一方向X间隔排布的第一绑定电极12，那么，沿第一方向X上，A个第一绑定电极12之间有(A-1)个间隙区域，相应地，第一掩膜版20的第一指部202的数量小于或者等于(A-1)个。
可以理解的是，当第一掩膜版20的第一指部202的数量为零时，第一掩膜版20只包括第一主体部201。在这种情况下，第一掩膜版20的设置参见前文的描述，此处不再赘述。
在一些实施例中，如图16所示，沿第一方向X上，第一掩膜版20的多个第一指部202中的任意两个第一指部202之间包括至少两个第一绑定电极12。
示例性地，显示面板包括A(A≥3，A为正整数)个第一绑定电极12，那 么，沿第一方向X上，A个第一绑定电极12有(A-1)个间隙区域，第一掩膜版20的第一指部202的数量小于(A-1)个，第一掩膜版20至多包括(A-2)个第一指部202。
示例性地，如图1C所示，多个第一绑定电极12中的任意两个第一绑定电极12沿第一方向X上的间距不唯一。
在一些实施例中，多个第一绑定电极12中的任意一个第一绑定电极12和其一侧的另一个第一绑定电极12沿第一方向X上的间距与，该第一绑定电极12和其另一侧的又一个第一绑定电极12沿第一方向X上的间距相同。
在另一些实施例中，多个第一绑定电极12中的任意一个第一绑定电极12和其一侧的另一个第一绑定电极12沿第一方向X上的间距与，该第一绑定电极12和其另一侧的又一个第一绑定电极12沿第一方向X上的间距不同。
为保证第一掩膜版20包括的第一指部202能够起到预期效果，则第一指部202的宽度(沿第一方向X上的尺寸)应在一定范围内。当第一指部202的宽度过窄时，则第一指部202易变形，且易导致其不能起到间隔效果。示例性地，第一掩膜版20包括的第一指部202的宽度大于20μm，那么，当相邻的两个第一绑定电极12沿第一方向X上的间距小于20μm时，则在这两个第一绑定电极12之间无法设置第一指部202。
可以理解的是，当第一指部202的宽度大于其所相邻的两个第一绑定电极12沿第一方向X上的间距时，如果在这两个第一绑定电极12之间设置第一指部202，相较于具备充足的距离(第一指部202的宽度小于其所相邻的两个第一绑定电极12沿第一方向X上的间距)，第一指部202的贴附平整度降低，会造成第一指部202贴附不良，例如第一指部202贴附不服帖，形状变形等，无法保证第一指部202可以起到预期效果，引起第一指部202的信赖性问题。
这时，如图16所示，第一掩膜版20包括的多个第一指部202只能设置于沿第一方向X上的间距大于20μm的两个第一绑定电极12之间。可以理解的是，在这种情况下，在满足沿第一方向X上的间距大于20μm的两个第一绑定电极12之间可以设置第一指部202，也可以不设置第一指部202。
在这种情况下，在步骤S53中，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，包括以下几种情况。
在一些示例中，S53包括：S53a、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
其中，导电层13’的多个与第二刻蚀区K2对应的部分被刻蚀去除。得到 的多条连接引线13的第二部132中，如图20所示，任意相邻的两条连接引线13的第二部132之间由第二间隙J2间隔。
在另一些示例中，S53包括：S53b、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131。其中，每条连接引线13的第二部132与一个第一部131相连。
其中，如图21所示，形成多条连接引线13的第二部132时，激光残余能量将导电层13’的第一部分13’1靠近基板11的选定侧面11cc的部分刻蚀去除，可以理解的是，如图21所示，导电层13’的第一部分13’1被刻蚀去除的部分沿第一方向X的尺寸和与其相邻的两条连接引线13的第二部132沿第一方向X的间距相同。
可以理解的是，在这种情况下，沿Laser2方向射入的激光对导电层13’的第一部分13’1的刻蚀长度与第一掩膜版20的多个第一指部202在基板11上的正投影的边界与基板11的选定侧面11cc之间的距离相同或大致相同。
激光对导电层13’的第一部分13’1的刻蚀长度为激光将导电层13’的第一部分13’1靠近基板11的选定侧面11cc的部分刻蚀后，导电层13’的第一部分13’1的剩余部分在基板11上的正投影的边界与基板11的选定侧面11cc之间的距离。例如，如图17中所示的第一子刻蚀区K11对应的部分被刻蚀去除，得到如图23中所示的第一子间隙区域151，那么，激光对导电层13’的第一部分13’1的刻蚀长度即为第一子间隙区域151在基板11上的正投影的边界与基板11的选定侧面11cc之间的距离。
导电层13’的第一部分13’1的多个第一刻蚀区K1中的至少一个第一刻蚀区K1对应的部分与第一掩膜版20的多个第一指部202存在交叠。如图17所示，多个第一刻蚀区K1包括第一类刻蚀区和第二类刻蚀区K13，每个第一类刻蚀区包括第一子刻蚀区K11和第二子刻蚀区K12，第一类刻蚀区包括的第一子刻蚀区K11相较于该第一类刻蚀区的第二子刻蚀区K12更靠近基板11的选定侧面11cc。第一子刻蚀区K11、第二类刻蚀区K13和第二刻蚀区K2沿第一方向X上的尺寸相同。
在上述步骤中，激光Laser2照射向导电层13’，将导电层13’的多个与第二刻蚀区K2对应的部分被刻蚀去除后，如图22所示，激光继续照射向导电层13’的第一部分13’1，将多个第一子刻蚀区K11和多个第二类刻蚀区K13对应的部分刻蚀去除。多个第一子刻蚀区K11对应的部分被去除后得到多个第一子间隙区域151，多个第二类刻蚀区K13对应的部分被去除后得到多个 第二类间隙区域16。
对于多个第一绑定电极12，在显示面板的制备过程中，当相邻的两个第一绑定电极12之间没有被第一掩膜版20的第一指部202间隔开时，如图23所示，在最终形成的显示面板中，与前述相邻的两个第一绑定电极12相连的两条连接引线13的第一部131之间被第二类间隙区域16间隔。当相邻的两个第一绑定电极12之间被第一掩膜版20的第一指部202间隔开时，在最终形成的显示面板中，如图23所示，与前述相邻的两个第一绑定电极12相连的两条连接引线13的第一部131之间被第一类间隙区域15间隔。
可以理解的是，多个第二子刻蚀区K12在导电层13’上对应的部分会在去除第一掩膜版20时，会随着第一掩膜版20的多个指部202一起被去除，因此，激光不需要对这部分区域进行刻蚀，省去了激光刻蚀这部分区域对应的部分的时间，进一步地，提高了生产效率。
需要说明的是，当在步骤S53中，导电层13’的第一部分13’1的多个第一子刻蚀区K11、多个第二类刻蚀区K13对应的部分被刻蚀去除时，在步骤S63中，在去除第一掩膜版后，如图23所示，形成了多条连接引线13的第一部131。
在一些实施例中，在步骤S63之后还包括：
S73、激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13。
其中，激光刻蚀导电层13’的其余部分，形成完整的多条连接引线13包括：激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131和/或激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
可以理解的是，步骤S73作为对步骤S53的补充，在去除第一掩膜版20后，导电层13’的多个与第一刻蚀区K1、多个第二刻蚀区K2、多个第三刻蚀区K3对应的部分已经全部刻蚀去除的情况下，不需要执行步骤S73。
在一些实施例中，在步骤S53a中仅形成了多条连接引线13的的第二部132。那么，步骤S73a包括激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131，以及激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
需要说明的是，S73中，利用的是的激光Laser1和/或激光Laser2。
如图23所示，通过上述流程制备的显示面板包括的多条连接引线13中，相邻的两条连接引线13之间由第一间隙J1间隔。其中，第一间隙J1包括第一类间隙区域15和第二类间隙区域16。每个第一类间隙区域15包括第一子间隙区域151和第二子间隙区域152，每个第一类间隙区域15包括的第一子 间隙区域151相较于该第一类间隙区域15的第二子间隙区域152更靠近基板11的选定侧面11cc。
示例性地，第二类间隙区域16沿第一方向X上的尺寸等于第一子间隙区域151沿第一方向X上的尺寸。
在一些实施例中，每个第一类间隙区域15包括的第一子间隙区域151沿第一方向X上的尺寸小于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸。可以理解的是，在这种情况下，第一类间隙区域15与第二类间隙区16的形状不同，第二类间隙区16为条状间隙，第一类间隙区域15为“凸”字型间隙。
在另一些实施例中，每个第一类间隙区域15包括的第一子间隙区域151沿第一方向X上的尺寸等于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸。可以理解的是，在这种情况下，第一类间隙区域15与第二类间隙区16均为条状间隙，且两者形状、尺寸相同。
作为一种可能的设计，多个第一绑定电极12沿第一方向X间隔排布，且每个第二绑定电极12沿第二方向Y延伸，其中，第二方向Y垂直于第一方向X且第二方向Y垂直于基板11的选定侧面11cc。
在另一些实施例中，如图24所示，第一掩膜版20具有另一种形状，多个第一绑定电极12中的任意两个相邻的第一绑定电极12之间的间隙区域内均设置有一个第一掩膜版20的第一指部202。
示例性地，显示面板包括A(A≥2，A为正整数)个第一绑定电极12，那么，沿第一方向X上，A个第一绑定电极12有(A-1)个间隙区域，第一掩膜版20的第一指部202的数量为(A-1)个，第一掩膜版20包括(A-1)个第一指部202。
在这种情况下，在步骤S43中，如图25所示，导电层13’的第一部分13’1包括多个第一刻蚀区K1，每个第一刻蚀区K1包括第一子刻蚀区K11和第二子刻蚀区K12，导电层13’的第一部分13’1的第二子刻蚀区K12对应的部分与第一掩膜版20的第一指部202存在交叠。
在步骤S53中，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132包括的几种情况参加前文对于步骤S53的描述。
如图26所示，通过上述流程制备的显示面板包括的多条连接引线13中，相邻的两条连接引线13之间由第一间隙J1间隔，第一间隙J1均为第一类间隙区域15。每个第一类间隙区域15包括第一子间隙区域151和第二子间隙区域152，每个第一类间隙区域15包括的第一子间隙区域151相较于该第一类 间隙区域15的第二子间隙区域152更靠近基板11的选定侧面11cc。所述多条连接引线13中的任意两条相邻的连接引线13的第一部131由第一类间隙区域15间隔。
示例性地，多条连接引线13中任意两条相邻的连接引线13的第一部分131由第一间隙J1间隔，当第一间隙J1包括的第二子间隙区域152是在去除第一掩膜版20时，第一掩膜版20的第一指部202将覆盖其上的导电层13’的对应的部分随第一指部202一起去除形成的，而该第一间隙J1包括的第一子间隙区域151是由激光刻蚀导电层13’对应的部分形成的。
为保证将导电层13’的第二子刻蚀区K12对应的部分完全刻蚀去除，激光的能量需要满足一定条件，在一些示例中，在垂直于基板11第一表面11a的方向，激光除刻蚀导电层13’外，还会刻蚀到与导电层13’接触且更靠近基板11一侧的膜层的表面(在导电层与基板11直接接触的情况下，激光会刻蚀到基板11的表面)，从而使得该第一间隙J1包括的第一子间隙区域151在垂直于第一表面11a的方向的尺寸要大于该第一间隙J1包括的第二子间隙区域152在垂直于第一表面11a的方向的尺寸。
这里所说的第一子间隙区域151和第二子间隙区域152在垂直于基板11第一表面11a的尺寸是指，第一子间隙区域151/第二子间隙区域152远离基板11的一侧表面与基板11之间的沿图1A中所示的Z方向的深度。
在一些实施例中，每个第一类间隙区域15包括的第一子间隙区域151沿第一方向X上的尺寸小于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸。可以理解的是，在这种情况下，第一类间隙区域15与第二类间隙区16的形状不同，第二类间隙区16为条状间隙，第一类间隙区域15为“凸”字型间隙。
示例性地，第一类间隙区域15包括的第一子间隙区域151沿第一方向X上的尺寸大于或者等于33μm且小于或者等于73μm。
在一些实施例中，第一类间隙区域15包括的第一子间隙区域151沿第一方向X上的尺寸大于或者等于30μm且小于或者等于70μm。
在一些实施例中，如图31所示，显示面板还包括设置于基板11的第二表面11b一侧的多个第二绑定电极19。多个第二绑定电极19靠近基板11的选定侧面11cc的一端被配置为与连接引线13的第三部133连接，多个第二绑定电极19远离基板11的选定侧面11cc的一端被配置为与位于基板11的第二表面11b一侧的电路板连接。
例如多个第二绑定电极19远离基板11的选定侧面11cc的一端的端部作 为连接柔性电路板F的绑定电极，也就是说多个第二绑定电极19需要预留较大位置进行外部线路绑定。
可以理解的是，采用这种设计，由于多个第二绑定电极19作为连接柔性电路板F的绑定电极，因此连接引线13的第三部133只需要保证可以与第二绑定电极19的有效连接，而不需要预留与外部线路绑定的位置。
因此，相较于采用如图13中所示的结构，即多条连接引线13的第三部133充当绑定电极，直接与柔性线路板F电连接，采用如图31中所示的结构时，由于存在第二绑定电极19，连接引线13的第三部133的长度缩短。
上述制备工艺，例如溅射镀膜工艺和激光工艺等仅作为示例性描述，不作为对实际生产工艺的限定。
对于第二绑定电极19的形状，有以下几种情况：
在一些实施例中，第二绑定电极19呈直线状。每个第二绑定电极19例如沿图28中所示的Y方向延伸。
在另一些实施例中，第二绑定电极19呈非直线状，第二绑定电极19包括依次首尾连接的多个延伸方向不同的部分。示例性地，如图27所示，每个第二绑定电极19例如包括第一子部191和第二子部192，且第二绑定电极19包括的第一子部191和第二子部192延伸方向不同。
示例性地，如图27所示，每个第二绑定电极19的第一子部191例如为直子部，每个第二绑定电极19的第一子部191沿第二方向Y延伸。
可以理解的是，当第二绑定电极19呈直线状时，激光Laser2沿图28中所示的方向射向导电层，形成多条连接引线13的第二部132时，激光将导电层的第二刻蚀区对应的部分刻蚀完后，激光残余能量对导电层的第三部分靠近基板的选定侧面的部分被去除。
由于第二绑定电极的延伸方向与激光刻蚀第二刻蚀区对应部分时的激光路径方向一致，因此，即使激光Laser2沿图28中所示的方向射向导电层的第三部分，激光刻蚀范围位于相邻两个第二绑定电极之间，激光不会射向第二绑定电极，因此，最终形成的第二绑定电极19不会造成损伤。
当第二绑定电极19呈非直线状时，激光Laser2沿图28中所示的方向射向导电层13’，形成多条连接引线的第二部时，激光将导电层13’的第二刻蚀区K2对应的部分刻蚀完后，激光残余能量会对第二绑定电极造成损伤，示例性地，如图29所示，当激光Laser2将导电层13’的第三部分13’3的多个第三刻蚀区K3对应的部分刻蚀去除后，激光的残余能量会射向第二绑定电极19的第二子部192，使得第二绑定电极19受到损伤，造成不良，从而影响显示 面板的信赖性。
需要说明的是，由于形成多条连接引线的第二部的过程中，激光刻蚀路径位于第二刻蚀区K2和第三刻蚀区K3对应的范围内，且连接引线13的第三部133沿第一方向X上的尺寸大于与其相连的第二绑定电极19沿第一方向X上的尺寸，可以理解的是，第二绑定电极19的第一子部191位于激光的刻蚀路径范围外，因此，激光的残余能量不会对第二绑定电极19的第一子部191造成损伤。
将导电层13’的第三部分13’3的多个第三刻蚀区K3对应的部分刻蚀去除后，得到多条连接引线的第三部133，因此，每个第三刻蚀区K3对应的区域位为形成的多条连接引线中的任意相邻的两条连接引线13的第三部133之间的区域。
为避免这种问题，在一些实施例中，提供一种显示面板的制备方法，包括：
S1、提供基板11。
其中，如图1A、图1B所示，基板11包括第一表面11a、第二表面11b以及连接第一表面11a和第二表面11b的多个侧面11c，多个侧面11c中的至少一个侧面为选定侧面11cc。第一表面11a包括显示区AA和位于显示区AA至少一侧的周边区AN，周边区AN相较于显示区AA更靠近基板11的选定侧面11cc。
S2a、在基板11的第一表面11a一侧形成阵列层。
其中，在基板11的第一表面11a一侧形成阵列层至少包括：在显示区AA形成驱动线路层14。
示例性地，在上述步骤中，在基板11的第一表面11a一侧形成阵列层还包括：在周边区AN形成多个第一绑定电极12。其中，如图4所示，多个第一绑定电极12沿第一方向X间隔排布，且每个第一绑定电极12沿第二方向Y延伸。周边区AN沿第一方向X延伸。第一方向X与第二方向Y交叉。
在上述步骤中，多个第一绑定电极12与驱动线路层14电连接。
示例性地，第一方向X垂直于第二方向Y。
S2b、在基板11的第一表面11a一侧设置第一掩膜版20。
其中，如图5所示，第一掩膜版20至少包括第一主体部201，第一主体部201包覆驱动线路层14靠近基板11的选定侧面11cc的部分，第一掩膜版20的第一主体部201还包覆多个第一绑定电极12靠近显示区AA的部分。
示例性地，在上述步骤中，如图16、图24所示，第一掩膜版20还包括多个第一指部202。
S3a、在基板11的第二表面11b一侧形成并列间隔排布的多个第二绑定电极19。
其中，如图27所示，每个第二绑定电极19包括第一子部191和第二子部192。每个第二绑定电极19的第一子部191相较于该第二绑定电极19的第二子部192更靠近基板11的选定侧面11cc。
每条连接引线13的第三部133与一个第二绑定电极19的第一子部191电连接。第二绑定电极19的第一子部191的延伸方向和与其连接的连接引线13的第三部133的端部的延伸方向相同。
S3b、在基板11的第二表面11b一侧设置第二掩膜版21。
其中，如图28所示，第二掩膜版21至少包括第二主体部211。第二主体部211至少包覆多个第二绑定电极19的第二子部192靠近基板11的选定侧面11cc的部分。
在一些实施例中，在上述步骤中，形成的第二掩膜版21还包括多个第二指部212。多个第二指部212的第一端连接第二主体部211，多个第二指部212的第二端朝向基板11的选定侧面11cc延伸，第二掩膜版21的多个第二指部212相较于第二掩膜版21的第二主体部211更靠近基板11的选定侧面11cc。
如图28所示，第二掩膜版21的多个第二指部212中的每个第二指部212位于相邻的两个第二绑定电极19之间的间隙区域。
示例性地，在上述步骤中，第二掩膜版21的多个第二指部212在基板11上的正投影的边界与基板11的选定侧面11cc之间具有设定距离。
示例性地，在上述步骤中，沿第一方向X上，第二掩膜版21的多个第二指部212中的每个第二指部212的尺寸小于或等于与其相邻的两个第二绑定电极19的间距。
示例性地，第二绑定电极19例如采用成膜、曝光、显影刻蚀的图案化工艺制备。
S4、形成导电层13’。
其中，导电层13’包括：位于基板11的第一表面11a一侧的第一部分13’1、位于基板11的选定侧面11cc一侧的第二部分13’2和位于基板11的第二表面11b一侧的第三部分13’3。
导电层13’的第一部分13’1覆盖多个第一绑定电极12靠近基板11的选定侧面11cc的部分。如图28所示，导电层13’的第三部分13’3覆盖多个第二绑定电极19靠近基板11的选定侧面11cc的部分。
在一些实施例中，在上述步骤中，导电层13’的第一部分13’1和第一掩膜 版20的第一主体部201无交叠。导电层13’的第三部分13’3和第二掩膜版21的第二主体部211无交叠。
S5、采用激光刻蚀图案化导电层13’，形成并列间隔排布的多条连接引线13。
其中，如图1A、图1B所示，多条连接引线13中的每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。每条连接引线13的第一部131与一个第一绑定电极12电连接。
激光刻蚀导电层13’形成多条连接引线13包括：如图29、图30、图33和图34所示，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
S61、去除第一掩膜版20。
S62、如图32、图36所示，去除第二掩膜版21。导电层的第三部位于第二掩膜版21上的部分随第二掩膜版21的去除一并去除，形成间隙。
在一些实施例中，如图31和图35所示，沿第一方向X上，连接引线13的第三部133的尺寸大于与其相连的第二绑定电极19的尺寸。
在另一些实施例中，沿第一方向X上，连接引线13的第三部133的尺寸等于与其相连的第二绑定电极19的尺寸。
在又一些实施例中，沿第一方向X上，连接引线13的第三部133的尺寸小于与其相连的第二绑定电极19的尺寸。
示例性地，在上述步骤中，设置第一掩膜版20的步骤在形成阵列层的步骤之后，设置第二掩膜版21的步骤在形成多个第二绑定电极19的步骤之后。
示例性地，在上述步骤中，形成阵列层的步骤和形成多个第二绑定电极的步骤不限定先后顺序。
示例性地，在上述步骤中，去除第一掩膜版的步骤在形成多条连接引线的第二部之后，且在形成多条连接引线的第一部之前。
示例性地，在上述步骤中，去除第二掩膜版的步骤在形成多条连接引线的第二部之后，且在形成多条连接引线的第三部之前。
在步骤S5中，形成多条连接引线的第一部和第二部的方法参见前文，此处不再赘述。
以下对显示面板包括多个第二绑定电极19时，形成多条连接引线13的第三部133的方法做介绍。
在一些实施例中，在设置第二掩膜版的步骤中，第二掩膜版包括第二主体 部。其中，第二主体部至少包覆多个第二绑定电极的第二子部靠近基板的选定侧面的部分。
在这种情况下，激光Laser2对导电层的第二部分进行刻蚀，形成多条连接引线的第二部。由于多个第二绑定电极的第二子部靠近基板的选定侧面的部分被第二掩膜版的第二主体部包覆其中，因此，当激光将第三刻蚀区K3对应的部分刻蚀去除后，激光被第二掩膜版的第二主体部遮挡，从而避免第二绑定电极19的第二子部192被激光的残余能量损伤的问题。
接着，去除第二掩膜版21。然后，激光Laser3沿图1B中所示的方向将导电层的第三部分的多个第三刻蚀区对应的部分刻蚀去除，从而形成完整的多条连接引线的第三部。
具体方法步骤可参照前文对于第一掩膜版仅包括第一主体部的情况下，形成多条连接引线的第一部的方法。
在另一些实施例中，在设置第二掩膜版21的步骤中，如图28、图32所示，第二掩膜版21包括第二主体部211和多个第二指部212。其中，第二主体部201至少包覆多个第二绑定电极19的第二子部192靠近基板11的选定侧面11cc的部分。
示例性地，显示面板包括B(B≥1，B为正整数)个沿第一方向X间隔排布的第二绑定电极19，那么，沿第一方向X上，B个第二绑定电极19之间有(B-1)个间隙区域，相应地，第二掩膜版21的第二指部212的数量小于或者等于(B-1)个。
可以理解的是，当第二掩膜版21的第二指部212的数量为零时，第二掩膜版21只包括第二主体部211。
在一些实施例中，第二掩膜版21的多个第二指部212的数量较少，如图28所示，沿第一方向X上，第二掩膜版21的多个第二指部212中的任意两个第二指部212之间包括至少两个第二绑定电极19。
示例性地，显示面板包括B(B≥3，B为正整数)个第二绑定电极19，那么，沿第一方向X上，B个第二绑定电极19有(B-1)个间隙区域，第二掩膜版21的第二指部212的数量小于(B-1)个，第二掩膜版21至多包括(B-2)个第二指部212。
需要说明的是，导电层13’的第三部分13’3的多个第三刻蚀区K3中的至少一个第三刻蚀区K3对应的部分与第二掩膜版21的多个第二指部212存在交叠。如图28所示，多个第三刻蚀区K3包括第三类刻蚀区和第四类刻蚀区K33，每个第三类刻蚀区包括第三子刻蚀区K31和第四子刻蚀区K32，第三类 刻蚀区包括的第三子刻蚀区K31相较于该第三类刻蚀区的第四子刻蚀区K32更靠近基板11的选定侧面11cc。第三子刻蚀区K31、第四类刻蚀区K33和第二刻蚀区K2沿第一方向X上的尺寸相同。
在去除第二掩膜版21时，导电层13’的第三部分13’3位于第二掩膜版21的多个第二指部212远离基板11一侧的部分为第四子刻蚀区K32对应的部分，可以理解的是，导电层13’的第三部分13’3的第四子刻蚀区K32对应的部分会在去除第二掩膜版21时随第二掩膜版21的多个第二指部212一起被去除。
在这种情况下，在步骤S5中，至少激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，包括以下几种情况。
在一些实施例中，如图29、图33所示，步骤S5包括：S5a、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132。
在上述步骤中，如图29和图30所示，激光Laser2沿图32中所示的方向将导电层13’的第二部分13’2的多个第二刻蚀区K2对应的部分刻蚀去除，形成多条连接引线13的第二部132。
在这个过程中，激光将多个第二刻蚀区K2对应的部分刻蚀去除后，激光的残余能量还会对导电层13’的第三部分13’3靠近基板11的选定侧面11cc的部分造成损伤。示例性地，在形成多条连接引线13的第二部132之后，激光的残余能量将导电层13’的第三部分13’3中多个第三子刻蚀区K31对应的部分刻蚀去除。
在这种情况下，在去除第一掩膜版的步骤之后，还包括：步骤S71a、激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131。
在这种情况下，在去除第二掩膜版的步骤之后，如图30所示，还包括：步骤S72a、激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
可以理解的是，在上述步骤中，步骤S71和步骤S72的先后顺序不做限定。
在另一些实施例中，步骤S5包括：S5b、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131。
在上述步骤中，形成多条连接引线的第一部和第二部的方法参见前文，此处不再赘述。
在这种情况下，在去除第一掩膜版的步骤之后，形成了完整的多条连接引 线13的第一部131。
在这种情况下，在去除第二掩膜版的步骤之后，还包括：步骤S72b、激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
在又一些实施例中，步骤S5包括：S5c、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
因为导电层13’的第三部分13’3的多个第四子刻蚀区K32对应的部分在去除第二掩膜版21时会随着第二掩膜版21的多个第二指部212一起被去除。因此，在上述步骤中，激光刻蚀导电层13’的第三部分13’3时，如图33所示，仅需将导电层13’的第三部分13’3的多个第三子刻蚀区K31和多个第四类刻蚀区K33对应的部分刻蚀去除。
可以理解的是，在这种情况下，省去了激光刻蚀多个第四子刻蚀区K32对应的部分的时间，进一步地，提高了生产效率。
在这种情况下，在去除第一掩膜版的步骤之后，还包括：步骤S71c、激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131。
在这种情况下，在去除第二掩膜版的步骤之后，如图31、图35所示，形成了完整的多条连接引线13的第三部133。
在再一些实施例中，步骤S5包括：S5d、激光刻蚀导电层13’的第二部分13’2形成多条连接引线13的第二部132，激光刻蚀导电层13’的第一部分13’1形成多条连接引线13的第一部131，激光刻蚀导电层13’的第三部分13’3形成多条连接引线13的第三部133。
在另一些实施例中，第二掩膜版21的多个第二指部212的数量较多，如图32所示，多个第二绑定电极19中的任意两个相邻的第二绑定电极19之间的间隙区域内均设置有一个第二掩膜版21的第二指部212。
示例性地，显示面板包括B(B≥2，B为正整数)个第二绑定电极19，那么，沿第一方向X上，B个第二绑定电极19有(B-1)个间隙区域，第二掩膜版21的第二指部212的数量为(B-1)个，第二掩膜版21包括(B-1)个第二指部212。
在这种情况下，在步骤S5中，如图32所示，导电层13’的第三部13’3的第三刻蚀区K3包括的第四子刻蚀区K32对应的部分与第二掩膜版21的第二指部212存在交叠。
在这种情况下，在形成多条连接引线13的第二部132的过程中，激光Laser2刻蚀导电层13’的第二部分13’2。
在一些实施例中，如图33所示，激光仅将导电层13’的多个与第二刻蚀区K2对应的部分刻蚀去除。
在另一些实施例中，如图34所示，激光将导电层13’的多个与第二刻蚀区K2对应的部分刻蚀去除后，激光的残余能量还会对导电层13’的第三部分13’3的靠近基板11的选定侧面11cc的部分造成损伤。
示例性地，如图32、图34所示，形成多条连接引线13的第二部132时，激光将导电层13’的多个与第二刻蚀区K2对应的部分刻蚀去除后，激光还会将导电层13’的第三部分13’3的多个第三子刻蚀区K31对应的部分刻蚀去除。在这种情况下，去除第二掩膜版21后，形成了如图35所示的多条连接引线13的第三部133。
可以理解的是，激光从一个方向射向导电层的第二部分和第三部分，相较于如图1B所示，激光分别沿两个方向射向导电层对导电层的第二部分和第三部分进行刻蚀，减少了制作工序。
在一些实施例中，在设置第一掩膜版20的步骤之前，如图36、图37所示，还包括：在驱动线路层14远离基板11的一侧形成发光器件层G。
其中，如图36～图39所示，第一掩膜版20至少包括第一主体部201，或者第一掩膜版20包括第一主体部和多个第一指部，第一主体部201至少包覆驱动线路层14靠近基板11的选定侧面11cc的部分。第一掩膜版20的主体部201还包覆发光器件层G靠近基板11的选定侧面11cc的部分。
图38和图39为根据图36中截面线GG和HH得到的截面图，这样在激光刻蚀形成多条连接引线的过程中，激光被第一掩膜版20阻挡，由于第一掩膜版20的保护作用，激光不会对发光器件层造成损伤，提高了显示面板的品质。
在另一些实施例中，在形成了完整的多条连接引线之后，如图40、图41所示，还包括：在驱动线路层14远离基板11的一侧形成发光器件层G。
可以理解的是，形成发光器件层G的步骤，可以在形成完整的多条连接引线13的步骤之前，也可以在形成完整的多条连接引线13的步骤之后。
示例性地，如图1C、图40所示，第一子间隙区域151沿第二方向Y的尺寸p1小于第一绑定电极12靠近基板11的选定侧面11cc的边界在基板11上的正投影与基板11的选定侧面11cc之间的距离为L2。
另一方面，本公开的实施例提供一种显示面板100，如图1A、图1B、图40、图41所示，包括：基板11、驱动线路层14、多个第一绑定电极12、多条连接引线13。基板11包括第一表面11a、第二表面11b以及连接第一表面 11a和第二表面11b的多个侧面11c，多个侧面11c中的至少一个侧面11c为选定侧面11cc。
基板11的第一表面11a包括显示区AA和位于显示区AA至少一侧的周边区AN，周边区AN相较于显示区AA更靠近基板11的选定侧面11cc。驱动线路层14设置于显示区AA的。多个第一绑定电极12设置于周边区AN，沿第一方向X间隔排布。第一方向X平行于基板11的选定侧面11cc和基板11的第一表面11a。
多条连接引线13沿第一方向X间隔排布。多条连接引线13中的每条连接引线13包括位于基板11的第一表面11a一侧的第一部131、位于基板11的选定侧面11cc一侧的第二部132和位于基板11的第二表面11b一侧的第三部133。每条连接引线13的第一部131与一个第一绑定电极12电连接。
相邻两条连接引线13的第一部131由第一间隙J1间隔，第一间隙J1包括第一类间隙区域15。第一类间隙区域15包括第一子间隙区域151和第二子间隙区域152，每个第一类间隙区域15的第一子间隙区域151相对于该第一类间隙区域15的第二子间隙区域152更靠近基板11的选定侧面11cc。如图23、图26所示，每个第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸p3小于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸p4。
本申请上述实施例提供的显示面板中的多条连接引线13中相邻两条连接引线13的第一部131由第一间隙J1间隔，第一间隙J1包括第一类间隙区域15。第一类间隙区域15包括第一子间隙区域151和第二子间隙区域152，每个第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸p3小于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸p4，参照前边对于显示面板的制备方法的介绍，多条连接引线13具备上述结构特征，这是由于在制备过程中，在形成导电层以及激光刻蚀之前，在驱动线路层14上设置第一掩膜版20，将驱动线路层14靠近基板11的选定侧面11cc的部分的包覆其中，从而激光Laser2沿由垂直于基板11的选定侧面11cc一侧照射向导电层13’时，射向驱动线路层14的激光被第一掩膜版20的主体部201遮挡，对驱动线路层14起到了保护作用，避免了激光对驱动线路层14造成损伤，从而避免了驱动线路层14受到激光照射后导致被配置为传输电路信号的部分线路被激光刻蚀去除或损伤，从而影响电路信号正常传输的问题，进而提高了显示面板的信赖性。
并且，由于第一掩膜版20包括第一主体部201和多个第一指部202，形 成在多个第一指部202上的导电层能够随着第一掩膜版20的去除而一并去除，从而无需对该部分导电层进行激光刻蚀，即可形成第一类间隙区域15的第二子间隙区域152，且第二子间隙区域152的尺寸与第一指部202的尺寸相同或大致相同，从而节省激光刻蚀步骤，减少激光刻蚀范围，提高了生产效率。
需要说明的是，在显示面板的制备过程中，第一掩膜版20只包括第一主体部201，就能起到保护驱动线路层14的作用。在一些可能的情况中，第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸p3大于或等于该第一类间隙区域15的第二子间隙区域152沿第一方向X上的尺寸p4。在显示面板的制备过程中，第一掩膜版20包括第一主体部201，当激光刻蚀形成多条连接引线13的第二部132后，激光的残余能量会继续沿Laser2方向射向基板11，将相邻的两条连接引线13的第一部131之间靠近基板11的选定侧面11cc的部分刻蚀去除，在这种情况下，第一子间隙区域151由来自显示面板的选定侧面一侧的激光Laser2刻蚀得到，第二子间隙区域152由来自显示面板的第一表面一侧的激光Laser1刻蚀得到，两个方向的激光的刻蚀宽度可以一致或不一致，相应的，使得第一类间隙区域15的第一子间隙区域151和第二子间隙区域152在第一方向上的尺寸一致或不一致。
需要说明的是，第一类间隙区域15包括的第一子间隙区域151也可以是由来自显示面板的第一表面一侧的激光Laser1刻蚀得到的，在这种情况下，第一类间隙区域15包括的第一子间隙区域151和第二子间隙区域152都是由来自显示面板的第一表面一侧的激光Laser1刻蚀得到的。
在显示面板的制备过程中，为保证刻蚀区(第一刻蚀区K1、第二刻蚀区K2或者第三刻蚀区K3)对应的部分被完全刻蚀去除(即需要被刻蚀去除的部分不会在刻蚀工艺结束后存在残留)，不会出现导电层本应被刻蚀去除的部分存在残留导致本应彼此之间不存在电连接关系的多条连接引线中的至少两条连接引线存在电连接，导致信号传输异常的问题，激光在往返扫描时，激光的刻蚀路径相较于刻蚀区更大，激光刻蚀的范围会超出需要刻蚀的长度。
示例性地，如图37、图41所示，第一刻蚀区K1的第一子刻蚀区K11沿第一方向X上的尺寸例如为0.5mm时，则在刻蚀第一子刻蚀区K11时，激光沿第一方向X上的扫描路径相较于第一刻蚀区K1的第一子刻蚀区K11沿第一方向X上的尺寸超出10～13μm。
可以理解的是，虽然第一间隙J1是由第一刻蚀区K1被去除形成的，但是第一间隙J1对应的部分在基板11上的正投影将第一刻蚀区K1对应的部分在基板11上的正投影包围其中。示例性地，第一间隙J1在沿第一方向X的 尺寸与第一刻蚀区K1沿第一方向X的尺寸之差的绝对值的范围为10～13μm，第一间隙J1在第二方向Y的尺寸与第一刻蚀区K1第二方向Y的尺寸之差的绝对值的范围为10～13μm。
相应地，第二间隙J2对应的部分在基板11上的正投影将第二刻蚀区K2对应的部分在基板11上的正投影包围其中。示例性地，第二间隙J2在沿第一方向X的尺寸与第二刻蚀区K2沿第一方向X的尺寸之差的绝对值的范围为10～13μm，第二间隙J2在第二方向Y的尺寸与第二刻蚀区K2沿第二方向Y的尺寸之差的绝对值的范围为10～13μm。
第三间隙J3对应的部分在基板11上的正投影将第三刻蚀区K3对应的部分在基板11上的正投影包围其中。示例性地，第三间隙J3在沿第一方向X的尺寸与第三刻蚀区K3沿第一方向X的尺寸之差的绝对值的范围为10～13μm，第三间隙J3在第二方向Y的尺寸与第三刻蚀区K3第二方向Y的尺寸之差的绝对值的范围为10～13μm。
在一些实施例中，如图40、图41所示，每个第一类间隙区域15的第一子间隙区域151沿第二方向Y上的尺寸p1小于或者等于该第一类间隙区域15的第二子间隙区域152沿第二方向Y上的尺寸p2。第二方向Y与连接引线13的第一部131的延伸方向平行。
示例性地，每个第一类间隙区域15的第一子间隙区域151沿第二方向Y上的尺寸p1大于或者等于33μm且小于或者等于73μm。
在一些示例中，每个第一类间隙区域15的第一子间隙区域151沿第二方向Y上的尺寸p1大于或者等于30μm且小于或者等于70μm。
在多条连接引线13的制备过程中，激光刻蚀形成多条连引线13的132时，激光残余能量还会对将连接引线13的第一部131靠近基板11的选定侧面11cc之间的部分刻蚀掉一部分，相应地，也会对第一掩膜版20的第一指部202靠近基板11的选定侧面11cc的一部分造成损伤，使得激光(沿第二方向Y)刻蚀长度大于第一掩膜版20的第一指部202与基板11的选定侧面11cc之间的距离。可以理解的是，这样的情况下，第一子间隙区域151沿第二方向Y的尺寸相较于第一指部202与选定侧面11cc的沿第二方向Y的距离增大。
如图40、图41所示，每个第一类间隙区域15的第一子间隙区域151沿第二方向Y上的尺寸小于或者等于该第一类间隙区域15的第二子间隙区域152沿第二方向Y上的尺寸，在显示面板的制备过程中，第一掩膜版的第一指部沿第二方向上的尺寸较长，第一指部尽可能延伸向靠近选定侧边的位置，从而能更有效地阻挡激光射向驱动线路层，导电层中形成在多个第一指部上 的无需被激光刻蚀的部分更多，进一步减少激光刻蚀范围，提高生产效率。
在一些实施例中，如图40、图41所示，每个第一类间隙区域15的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸之差的范围为0～100μm。
每个第一类间隙区域15的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸之差的范围例如0、55μm或者100μm。
第一类间隙区域15的尺寸会影响其紧邻的连接引线13的尺寸，每个第一类间隙区域15的第一子间隙区域151和第二子间隙区域152沿第一方向X上的尺寸不能相差过大，在保证相邻两条连接引线13之间的电绝缘的基础上，保证多条连接引线13的尺寸均一性，保证其电学性能的均一性。
在一些实施例中，如图41所示，多条连接引线13中的任意两条相邻的连接引线13的第一部131由第一类间隙区域15间隔。
如图41所示，每两条相邻的连接引线13的第一部131均由第一类间隙区域15间隔，也就是说，在显示面板的制备过程中，第一掩膜版20例如如图25所示，包括多个第一指部202，且多个第一指部202一一对应的位于每相邻的两个第一绑定电极12之间的间隙区域，从而得到的多条连接引线13中的第一部131均由第一类间隙区域15间隔开。
在一些实施例中，如图40所示，第一间隙J1还包括第二类间隙区域16，第二类间隙区域16沿第一方向X上的尺寸p5等于第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸p3。
如图36所示，第二类间隙区域16通过激光刻蚀导电层13’中的第二类刻蚀区K13得到，第一类间隙区域15通过激光刻蚀导电层中的第一子刻蚀区K11得到，由此，如图40所示，第二类间隙区域16沿第一方向X上的尺寸均一不变，且第二类间隙区域16沿第一方向X上的尺寸等于第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸，均等于激光刻蚀的设定刻蚀宽度。
在一些示例中，如图40所示，第一类间隙区域15和至少一个第二类间隙区域16交替设置。
多个第一间隙J1中第一类间隙区域15和第二类间隙区域16的设置方式与第一掩膜版的第一指部的设置方式有关，设置方式为一个第一类间隙区域15和至少一个第二类间隙区域16交替设置，也就是说每相邻两个第一类间隙区域15之间设置有至少一个第二类间隙区域16，如图40所示，相邻两个第一类间隙区域15之间设置有一个、两个或多个第二类间隙区域16。
在一些实施例中，如图40、图41所示，多个第一类间隙区域15中，每个第一类间隙区域15中的第一子间隙区域151和第二子间隙区域152的分界线，相较于多个第一绑定电极12靠近基板11的选定侧面11cc的一端的边界，更靠近基板11的选定侧面11cc。
如图40、图41所示，第一子间隙区域151和第二子间隙区域152的分界线与选定侧面11cc之间的距离p6，小于多个第一绑定电极12与基板11的选定侧面11cc之间的距离L2，第一子间隙区域151和第二子间隙区域152的分界线为第一掩膜版20的第一指部202靠近基板11的选定侧面11cc的一端的边界，第一掩膜版20的第一指部202超过多个第一绑定电极12靠近基板11的选定侧面11cc的一端的边界，第一指部202尽可能延伸向靠近基板11的选定侧面11cc的位置，从而进一步减少激光刻蚀范围，提高生产效率。
在一些实施例中，多个第一绑定电极12沿第一方向X并列间隔排布。如图40、图41所示，第一绑定电极12沿第一方向X上的尺寸p9小于或者等于与该第一绑定电极12连接的连接引线13的第一部131沿第一方向X上的尺寸p8/p8’。
为了保证连接引线13第一绑定电极12的有效连接，连接引线的第一部131沿第一方向X上的尺寸一般会比与其连接的第一绑定电极12沿第一方向X上的尺寸大一些或者相等，从而二者具有更大的接触面积，能够更稳固连接。
需要说明的是，由于第一类间隙区域15包括尺寸不等的第一子间隙区域151和第二子间隙区域152，因此被该第一类间隙区域15分隔开的连接引线13的第一部131也被分为尺寸不等的两部分，连接引线13的第一部131沿第一方向X上的尺寸为连接引线13的第一部131的两部分分别沿第一方向X上的尺寸的平均值。
在一些实施例中，如图40、图41所示，第一类间隙区域15沿第一方向X上的尺寸小于或者等于与其相邻的两个第一绑定电极12沿第一方向X上的间距p10。
如图40、图41所示，第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸p3和第二子间隙区域152沿第一方向X上的尺寸p4均小于或者等于与其相邻的两个第一绑定电极12沿第一方向X上的间距p10。
对应显示面板的制备方法，第一掩膜版包括多个第一指部，第一指部沿第一方向X上的尺寸小于或等于与其相邻的两个第一绑定电极12沿第一方向X上的间距p10，第一指部对应的区域形成第二子间隙区域152，第一子间隙区 域151由激光刻蚀宽度决定。
在一些实施例中，如图40、图41所示，相邻的两条连接引线13的第二部132之间由第二间隙J2间隔。第二间隙J2均为激光刻蚀导电层的第二刻蚀区K2得到的。示例性地，多个第二间隙J2沿第一方向X上的尺寸相等。
示例性地，在形成多条连接引线13的第二部132时，激光将导电层13’的第二刻蚀区K2对应的部分刻蚀去除后，激光的残余能量还会将导电层13’的第一子刻蚀区K11对应的部分刻蚀去除，可以理解的是，第二间隙J2和与其相连的第一间隙J1的第一子间隙区域151都是在同一步骤中由相同的激光刻蚀形成。因此，第二间隙J2和与其相连的第一间隙J1的第一子间隙区域151沿第一方向X的尺寸相等。
在一些实施例中，如图1A所示，显示面板100包括第一绑定电极和多条连接引线，在基板的第二表面一侧不设置绑定电极，从而多条连接引线的第三部远离选定侧面的部分与集成电路芯片或者柔性线路板电连接，以充当绑定电极。
在一些实施例中，如图1B、图42、图43和图44所示，显示面板100还包括：多个第二绑定电极19。多个第二绑定电极19设置于基板11的第二表面11b一侧，且沿第一方向X间隔排布。每个第二绑定电极19包括第一子部191和第二子部192，每个第二绑定电极19的第一子部191相较于第二子部192更靠近基板11的选定侧面11cc。每条连接引线13的第三部133与一个第二绑定电极19的第一子部191电连接。第二绑定电极19的第一子部191的延伸方向和与其电连接的连接引线13的第三部133的延伸方向相同。
第二绑定电极19呈非直线状，第二绑定电极19包括的第一子部191和第二子部192延伸方向不同。
如图42、图43和图44所示，相邻两条连接引线13的第三部133之间由第三间隙J3间隔，第三间隙J3包括第三类间隙区域17，多个第三类间隙区域17中的每个第三类间隙区域17包括第三子间隙区域171和第四子间隙区域172，每个第三类间隙区域17的第三子间隙区域171相较于该第三类间隙区域17的第四子间隙区域172更靠近基板11的选定侧面11cc。每个第三类间隙区域17的第三子间隙区域171沿第一方向X上的尺寸t1小于该第三类间隙区域17的第四子间隙区域172沿第一方向X上的尺寸t2。
参照前边对于显示面板的制备方法的描述，激光Laser2对导电层的第二部分进行刻蚀，形成多条连接引线的第二部。由于多个第二绑定电极的第二子部靠近基板的选定侧面的部分被第二掩膜版的第二主体部包覆其中，因此，当 激光将第三刻蚀区K3对应的部分刻蚀去除后，激光被第二掩膜版的第二主体部遮挡，从而避免第二绑定电极19的第二子部192被激光的残余能量损伤的问题。并且，第二掩膜版还包括第二指部，形成在多个第二指部上的导电层能够随着第二掩膜版的去除而一并去除，从而无需对该部分导电层(第四子刻蚀区K32)进行激光刻蚀，即可形成第三间隙的第四子间隙区域172，且第四子间隙区域172的尺寸与第二指部的尺寸一致，从而节省激光刻蚀步骤，减少激光刻蚀范围，提高了生产效率。在最终得到的多条连接引线的第三部具有与第二掩膜版相对应的结构特征，相邻第三部由第三间隙间隔，每个第三类间隙区域17的第三子间隙区域171沿第一方向X上的尺寸小于该第三类间隙区域17的第四子间隙区域172沿第一方向X上的尺寸。
在一些实施例中，如图44所示，多条连接引线13中的任意两条相邻的连接引线13的第三部133由第三类间隙区域17间隔。
多条连接引线13中的每两条相邻的连接引线13的第三部133由第三类间隙区域17间隔，对应图33中的第二掩膜版21，第二掩膜版21包括多个第二指部，多个第二指部和每相邻两个第二绑定电极的间隙一一对应，从而得到的多条连接引线13有如上特征。
在一些实施例中，如图42、图43所示，第三间隙J3还包括第四类间隙区域18，第三类间隙区域17和至少一个第四类间隙区域18交替设置。第四类间隙区域18沿第一方向X上的尺寸t3等于第三类间隙区域17的第三子间隙区域171沿第一方向X上的尺寸t1。
如图28所示，第四类间隙区域18通过激光刻蚀导电层13’中的第四类刻蚀区K33得到，第三类间隙区域17通过激光刻蚀导电层中的第三子刻蚀区K31和第四子刻蚀区K32得到，由此，如图42、图43所示，第四类间隙区域18沿第一方向X上的尺寸均一不变，且第四类间隙区域18沿第一方向X上的尺寸t3等于第一类间隙区域15的第一子间隙区域151沿第一方向X上的尺寸，均等于激光刻蚀的设定刻蚀宽度。
在一些实施例中，如图42、图43、图44所示，多个第三类间隙区域17中，每个第三类间隙区域17中的第三子间隙区域171和第四子间隙区域172的分界线，相较于多个第二绑定电极19靠近基板11的选定侧面11cc的一端的边界，更靠近选定侧面11cc。
如图42、图43、图44所示，第三子间隙区域171和第四子间隙区域172的分界线与基板11的选定侧面11cc之间的距离t4，小于多个第二绑定电极19与选定侧面之间的距离t5。
进一步地，如图42所示，第三子间隙区域171和第四子间隙区域172的分界线与连接引线13的第三部133远离基板11的选定侧面11cc的一侧边界的距离t9大于，第三子间隙区域171和第四子间隙区域172的分界线与选定侧面11cc之间的距离t4。
采用这样的设计，第一类间隙区域15包括的第一子间隙区域151沿第二方向Y的尺寸小于该第一类间隙区域15包括的第二子间隙区域152沿第二方向Y的尺寸。第一类间隙区域15包括的第二子间隙区域152例如是在去除第二掩膜版21时随着第二指部212的去除所形成的，该第一类间隙区域15包括的第一子间隙区域151例如是通过激光刻蚀形成的，可以理解的是，采用这样的设计，减少了激光刻蚀的范围，进一步地提高了连接引线13的制备效率。
示例性地，如图43所示，第二绑定电极19的第一子部191包括第一连接子部1911和第二连接子部1912，每个第一子部191的第一连接子部1911相较于该第一子部191的第二连接子部1912更靠近基板11的选定侧面11cc。第三子间隙区域171和第四子间隙区域172的分界线与基板11的选定侧面11cc之间的距离t4，大于多个第二绑定电极19与选定侧面之间的距离t5。
每个第二绑定电极19的第一子部191的第二连接子部1912被配置为与该第二绑定电极19的第二子部192电连接，该第二绑定电极19的第一子部191的第一子连接部1911被配置与一条连接引线13的第三部133电连接。
参见图43，当第二绑定电极19呈非直线状时，第二绑定电极19靠近基板11的选定侧面11cc的部分的延伸方向垂直于基板11的选定侧面11cc，第二绑定电极19远离基板11的选定侧面11cc的部分的延伸方向与基板11的选定侧面11cc所在的平面呈一定夹角。
可以理解的是，如果第二绑定电极19的宽度唯一，例如第二绑定电极的第一子部191包括的第二子连接部1912在垂直于其延伸方向上的尺寸与该第一子部191包括的第一子连接部1911在垂直于其延伸方向上的尺寸相同，那么，相邻的两个第二绑定电极19的第一子部191的第二子连接部1912存在相接造成短路的风险。
因此，采用第一子部191的第二子连接部1912在垂直于其延伸方向上的尺寸小于该第一子部191的第一子连接部1911在垂直于其延伸方向上的尺寸的设计，将每个第一子部191的第二子连接部1912作为过渡连接部，从而在增大第二绑定电极19与连接引线13的交叠面积的同时，保证多个第二绑定电极19之间能够保证独立分隔开，不会造成多个第二绑定电极19中的任意 两个第二绑定电极19相接造成线路短路的问题。
进一步地，每个第二绑定电极19的第一子部191包括的第一连接子部1911沿第一方向X的尺寸该第一子部191包括的第二连接子部1912沿第一方向X的尺寸。第二连接子部1912和与其电连接的连接引线13的第三部133存在交叠。可以理解的是，采用这样的设计，使得第二绑定电极19与连接引线13电连接的部分的交叠面积增大，使得第二绑定电极19和与其电连接的连接引线13能够保证充分接触，进而保证第二绑定电极19与连接引线13的连接稳定性。
同时，由于第二绑定电极19与连接引线的连接部分的面积增大，相应地，在其余条件(例如第二绑定电极19在垂直于基板11的方向上的尺寸和第二绑定电极19与连接引线13存在交叠的部分沿第二方向Y的尺寸)不变的情况下，这部分的阻抗也会减小，使得第二绑定电极19和连接引线13之间的信号传输更稳定。
示例性地，如图43所示，第二绑定电极19的第一子部191的第二连接子部1912和该第二绑定电极19的第二子部192的宽度相同或大致相同。这里所说的第二连接子部1912和第二子部192的宽度是指第二连接子部1912/第二子部192在垂直于其延伸方向上的尺寸。
在一些实施例中，如图42、图43、图44所示，多个第二绑定电极19沿第一方向X间隔排布。第二绑定电极19的第一子部191沿第一方向X上的尺寸t6小于或者等于与该第二绑定电极19连接的连接引线13的第三部133沿第一方向X上的尺寸t7。
在一些实施例中，如图42、图43、图44所示，第三类间隙区域17的沿第一方向X上的尺寸小于或者等于与其相邻的两个第二绑定电极19的第一子部191沿第一方向X上的间距t8。
第三类间隙区域17的第三子间隙区域171沿第一方向X上的尺寸t1和第四子间隙区域172沿第一方向X上的尺寸t2均小于或者等于与其相邻的两个第二绑定电极19的第一子部191沿第一方向X上的间距t8。
进一步地，如图38、图39所示，显示面板100还包括发光器件层G，发光器件层G包括多个发光器件G1和保护膜G3。
示例性地，显示面板100包括至少三种颜色的子像素P，该多种颜色的子像素至少包括第一颜色子像素、第二颜色子像素和第三颜色子像素，第一颜色、第二颜色和第三颜色为三基色(例如红色、绿色和蓝色)。示例性地，每个子像素P包括至少一个发光器件G1。
在一些示例中，如图38、图39所示，保护膜G3包括覆盖多个发光器件G1的部分和填充多个发光器件G1的间隙区域的部分。示例性地，保护膜G3的材料可以为黑色硅胶或者黑色树脂等。保护膜G3能够对多个发光器件G1进行保护，避免多个发光器件G1在形成发光器件G1之后的工艺制程中受到损坏。
示例性地，发光器件G1包括但不限于OLED(Organic Light-Emitting Diode，有机发光二极管)、Mini LED(Mini Light-Emitting Diode，迷你发光二极管)、Micro LED(Micro Light-Emitting Diode，微型发光二极管)等。
又一方面，提供一种显示装置1000，如图45所示，包括：如上述任一实施例所述的显示面板100。
采用迷你发光二极管或微型发光二极管作为发光器件G1，相较于传统LED，所占体积更小，颗粒更小，在同样的屏幕尺寸内，单位面积内光源密度更高且光源单位尺寸更小，因此能够对发光器件G1实现更为精密的局部控制，不会产生发光器件G1亮度不匀的问题，可以保证显示亮度的均匀度，从而保证显示装置1000的显示质量。
在一些实施例中，显示装置1000还包括集成电路芯片和柔性电路板F。
示例性地，集成电路芯片被配置为与柔性电路板F实现电气连接，通过集成电路芯片发出控制信号，再通过柔性电路板F将驱动信号传递至多条连接引线13，并通过多条连接引线13传递至多个第一绑定电极12。多个第一绑定电极12被配置为与驱动线路层14实现电连接。
驱动线路层14例如包括多条信号线等结构，驱动线路层14与发光器件层G耦接，被配置为驱动发光器件层G发光。具体地，第一绑定电极12接收多条连接引线13传输的驱动信号并将该驱动信号传递至驱动线路层14，从而控制发光器件层G发光，使得显示装置1000显示画面。
示例性地，如图38、图39所示，发光器件层G还包括像素驱动芯片G2。可以理解的是，驱动线路层14还可以与像素驱动芯片G2连接，使得像素驱动芯片G2控制发光器件G1的发光亮度。具体地，可以是三个发光器件G1由一个像素驱动芯片G2驱动控制，在此不做限定，仅作为对一种可能的实施方式的举例说明。
再一方面，提供一种拼接显示装置10000，如图46所示，包括：多个如上述任一实施例所述的显示装置1000。
示例性地，拼接显示装置10000中的多个显示装置1000呈阵列排布。
示例性地，如图46所示，显示装置1000例如为矩形。
显示面板100中，多个第一绑定电极12沿第一方向X并列排布，相应地，多条连接引线13也是沿第一方向X并列排布，将平行与显示装置1000的显示面，且垂直于第一方向X的另一方向称为第二方向Y。显示装置1000包括多个侧面，以下，将显示装置1000的多个侧面中靠近基板11的周边区AN的侧面称为显示装置1000的选定侧面进行描述。
示例性地，如图40、图41所示，显示面板100包括显示区AA和位于显示区AA一侧的周边区AN，多条连接引线13和多个第一绑定电极12靠近基板11的周边区AN设置。
进一步地，如图46所示，将多个包括如图46所示的显示面板100的显示装置1000拼接时，将相邻的两个显示装置1000的选定侧面均沿第一方向X设置，这样，沿第一方向X上排成一排的多个显示装置1000中，相邻两个显示装置1000之间沿第一方向X基本没有拼缝；沿第二方向Y上排成一列的多个显示装置1000中相邻两个显示装置1000之间有拼接缝隙。
也就是说沿第一方向X上排成一排的多个显示装置1000中，相邻两个显示装置之间的拼接缝隙的尺寸，小于沿第二方向Y上排成一列的多个显示装置1000中相邻两个显示装置1000之间的拼接缝隙的尺寸。但周边区AN在第二方向Y上的尺寸很小，因此拼接显示装置10000在实际观看时，相邻两个显示装置1000之间的拼缝在观看距离内较难被肉眼发现，从而使得拼接显示装置10000的显示画面较完整，可以呈现较佳的显示效果。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种显示面板，包括：
    基板；所述基板包括第一表面、第二表面以及连接所述第一表面和第二表面的多个侧面，所述多个侧面中的至少一个侧面为选定侧面；所述第一表面包括显示区和位于所述显示区至少一侧的周边区，所述周边区相较于所述显示区更靠近所述选定侧面；
    设置于所述显示区的驱动线路层；
    设置于所述周边区的多个第一绑定电极；所述多个第一绑定电极沿第一方向间隔排布；所述第一方向平行于所述选定侧面和所述第一表面；
    沿所述第一方向间隔排布的多条连接引线；所述多条连接引线中的每条连接引线包括位于所述第一表面一侧的第一部、位于所述选定侧面一侧的第二部和位于所述第二表面一侧的第三部；每条所述连接引线的第一部与一个所述第一绑定电极电连接；
    其中，相邻两条连接引线的第一部由第一间隙间隔，所述第一间隙包括第一类间隙区域，所述第一类间隙区域包括第一子间隙区域和第二子间隙区域，所述第一子间隙区域相对于所述第二子间隙区域更靠近所述选定侧面；所述第一子间隙区域沿所述第一方向上的尺寸小于所述第二子间隙区域沿所述第一方向上的尺寸。
  2. 根据权利要求1所述的显示面板，其中，所述第一子间隙区域沿第二方向上的尺寸小于或者等于所述第二子间隙区域沿所述第二方向上的尺寸；
    所述第二方向与所述连接引线的第一部的延伸方向平行。
  3. 根据权利要求1或2所述的显示面板，其中，每个所述第一类间隙区域的第一子间隙区域和第二子间隙区域沿所述第一方向上的尺寸之差的范围为0～100μm。
  4. 根据权利要求1～3中任一项所述的显示面板，其中，所述多条连接引线中的任意两条相邻的连接引线的第一部由所述第一类间隙区域间隔。
  5. 根据权利要求1～3中任一项所述的显示面板，其中，所述第一间隙还包括第二类间隙区域，所述第二类间隙区域沿所述第一方向上的尺寸等于所述第一子间隙区域沿所述第一方向上的尺寸。
  6. 根据权利要求5所述的显示面板，其中，所述第一类间隙区域和至少一个所述第二类间隙区域交替设置。
  7. 根据权利要求1～6中任一项所述的显示面板，其中，所述多个第一类间隙区域中，每个所述第一类间隙区域中的第一子间隙区域和第二子间隙区域的分界线，相较于所述多个第一绑定电极靠近所述选定侧面的一端的边界， 更靠近所述选定侧面。
  8. 根据权利要求1～7中任一项所述的显示面板，其中，所述多个第一绑定电极沿所述第一方向并列间隔排布；
    所述第一绑定电极沿所述第一方向上的尺寸小于或者等于与该第一绑定电极连接的所述连接引线的第一部沿所述第一方向上的尺寸。
  9. 根据权利要求1～8中任一项所述的显示面板，其中，所述第一类间隙区域沿所述第一方向上的尺寸小于或者等于与其相邻的两个所述第一绑定电极沿所述第一方向上的间距。
  10. 根据权利要求1～9中任一项所述的显示面板，其中，所述显示面板还包括：
    设置于所述第二表面一侧的多个第二绑定电极；所述多个第二绑定电极沿所述第一方向间隔排布；每个第二绑定电极包括第一子部和第二子部；所述第一子部相较于所述第二子部更靠近所述选定侧面；
    每条连接引线的第三部与一个所述第一子部电连接，所述第一子部的延伸方向和与其电连接的所述连接引线的第三部的延伸方向相同；
    相邻两个连接引线的第三部之间由第三间隙间隔，所述第三间隙包括第三类间隙区域，所述多个第三类间隙区域中的每个第三类间隙区域包括第三子间隙区域和第四子间隙区域，所述第三子间隙区域相较于所述第四子间隙区域更靠近所述选定侧面；
    所述第三子间隙区域沿所述第一方向上的尺寸小于所述第四子间隙区域沿所述第一方向上的尺寸。
  11. 根据权利要求10所述的显示面板，其中，所述多条连接引线中的任意两条相邻的连接引线的第三部由所述第三类间隙区域间隔。
  12. 根据权利要求10所述的显示面板，其中，所述第三间隙还包括第四类间隙区域，所述第四类间隙区域沿所述第一方向上的尺寸等于所述第三子间隙区域沿所述第一方向上的尺寸；
    所述第三类间隙区域和至少一个所述第四类间隙区域交替设置。
  13. 根据权利要求10～12中任一项所述的显示面板，其中，所述多个第三类间隙区域中，每个第三类间隙区域中的第三子间隙区域和第四子间隙区域的分界线，相较于所述多个第二绑定电极靠近所述选定侧面的一端的边界，更靠近所述选定侧面。
  14. 根据权利要求10～13中任一项所述的显示面板，其中，所述多个第二绑定电极沿所述第一方向间隔排布；
    所述第二绑定电极的第一子部沿所述第一方向上的尺寸小于或者等于与所述第二绑定电极连接的所述连接引线的第三部沿所述第一方向上的尺寸。
  15. 根据权利要求10～14中任一项所述的显示面板，其中，所述第三类间隙区域的沿所述第一方向上的尺寸小于或者等于与其相邻的两个所述第二绑定电极的第一子部沿所述第一方向上的间距。
  16. 一种显示装置，包括根据权利要求1～15中任一项所述的显示面板。
  17. 拼接显示装置，包括多个根据权利要求16所述的显示装置。
  18. 一种显示面板的制备方法，包括：
    提供基板；其中，所述基板包括第一表面、第二表面以及连接所述第一表面和第二表面的多个侧面，所述多个侧面中的至少一个侧面为选定侧面；所述第一表面包括显示区和位于所述显示区至少一侧的周边区，所述周边区相较于所述显示区更靠近所述选定侧面；
    在所述第一表面一侧形成阵列层；其中，所述在所述第一表面一侧形成阵列层包括：在所述显示区形成驱动线路层；
    在所述第一表面一侧设置第一掩膜版；其中，所述第一掩膜版至少包括第一主体部，所述第一主体部至少包覆所述驱动线路层靠近所述选定侧面的部分；
    形成导电层；其中，所述导电层包括：位于所述第一表面一侧的第一部分、位于所述选定侧面一侧的第二部分和位于所述第二表面一侧的第三部分；
    采用激光刻蚀图案化所述导电层，形成并列间隔排布的多条连接引线；其中，所述多条连接引线中的每条连接引线包括位于所述第一表面一侧的第一部、位于所述选定侧面一侧的第二部和位于所述第二表面一侧的第三部；所述激光刻蚀所述导电层形成多条连接引线包括：至少激光刻蚀所述导电层的第二部分形成所述多条连接引线的第二部；
    去除所述第一掩膜版。
  19. 根据权利要求18所述的制备方法，其中，所述在所述第一表面一侧形成阵列层还包括：在所述周边区形成多个第一绑定电极；其中，所述多个第一绑定电极沿第一方向间隔排布，且每个第一绑定电极沿第二方向延伸；所述周边区沿所述第一方向延伸，所述第一方向与所述第二方向交叉；
    所述在所述第一表面一侧设置第一掩膜版的步骤中，所述第一掩膜版的第一主体部还覆盖所述多个第一绑定电极靠近所述显示区的部分。
  20. 根据权利要求19所述的制备方法，其中，所述在所述第一表面一侧设置第一掩膜版的步骤中，所述第一掩膜版还包括多个第一指部；所述多个第 一指部的第一端连接所述第一主体部，所述多个第一指部的第二端朝向所述选定侧面延伸，所述多个第一指部相较于所述第一主体部更靠近所述选定侧面；每个第一指部位于相邻的两个第一绑定电极之间的间隙区域。
PCT/CN2022/121121 2022-09-23 2022-09-23 显示面板、显示装置及拼接显示装置 WO2024060263A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN209728710U (zh) * 2019-05-14 2019-12-03 广州视源电子科技股份有限公司 触控屏的预备结构和触控屏
CN212256800U (zh) * 2020-09-24 2020-12-29 京东方科技集团股份有限公司 显示面板、显示装置及拼接显示装置
CN113437025A (zh) * 2021-06-10 2021-09-24 深圳市华星光电半导体显示技术有限公司 阵列基板侧面走线制造方法及拼接显示面板
CN114156305A (zh) * 2021-11-30 2022-03-08 Tcl华星光电技术有限公司 显示面板及其制备方法
CN114203042A (zh) * 2021-12-10 2022-03-18 惠州华星光电显示有限公司 显示面板、显示面板的制作方法以及显示装置
CN114743932A (zh) * 2022-03-28 2022-07-12 Tcl华星光电技术有限公司 一种显示面板侧面布线方法及显示面板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN209728710U (zh) * 2019-05-14 2019-12-03 广州视源电子科技股份有限公司 触控屏的预备结构和触控屏
CN212256800U (zh) * 2020-09-24 2020-12-29 京东方科技集团股份有限公司 显示面板、显示装置及拼接显示装置
CN113437025A (zh) * 2021-06-10 2021-09-24 深圳市华星光电半导体显示技术有限公司 阵列基板侧面走线制造方法及拼接显示面板
CN114156305A (zh) * 2021-11-30 2022-03-08 Tcl华星光电技术有限公司 显示面板及其制备方法
CN114203042A (zh) * 2021-12-10 2022-03-18 惠州华星光电显示有限公司 显示面板、显示面板的制作方法以及显示装置
CN114743932A (zh) * 2022-03-28 2022-07-12 Tcl华星光电技术有限公司 一种显示面板侧面布线方法及显示面板

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