WO2024057847A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2024057847A1
WO2024057847A1 PCT/JP2023/030264 JP2023030264W WO2024057847A1 WO 2024057847 A1 WO2024057847 A1 WO 2024057847A1 JP 2023030264 W JP2023030264 W JP 2023030264W WO 2024057847 A1 WO2024057847 A1 WO 2024057847A1
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Prior art keywords
sub
connection member
main
metal
electrode
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PCT/JP2023/030264
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English (en)
French (fr)
Japanese (ja)
Inventor
大勝 梅上
Original Assignee
ローム株式会社
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Priority to JP2024546805A priority Critical patent/JPWO2024057847A1/ja
Publication of WO2024057847A1 publication Critical patent/WO2024057847A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in the document includes a plurality of first switching elements, a plurality of second switching elements, a first power terminal, and a second power terminal.
  • the second power terminal has a first strip-shaped portion, a plurality of second strip-shaped portions, and an external connection portion.
  • the plurality of second strip portions and the plurality of second switching elements are individually connected by a plurality of second conductive wires. Further, a plurality of first conductive wires are individually connected to the plurality of first switching elements.
  • wires that perform various functions may be connected to the first switching element or the second switching element. If additional electrodes are provided for connecting connection members such as these wires, miniaturization of the first switching element and the second switching element will be hindered.
  • An object of the present disclosure is to provide a semiconductor device that is improved over conventional ones.
  • a semiconductor device provided by a first aspect of the present disclosure includes a first switching element having a first electrode disposed on a first side in the thickness direction and through which a main current flows, and a first switching element connected to the first electrode. 1 main connection member.
  • the semiconductor device further includes a first sub-connection member and a second sub-connection member connected to the first main connection member.
  • the first main connection member has a first main metal as a main component
  • the first sub-connection member has a first sub-metal as a main component
  • the second sub-connection member has a second sub-metal as a main component. do.
  • the first sub-metal and the second sub-metal have different thermoelectric powers.
  • a semiconductor device provided by a second aspect of the present disclosure includes a plurality of first switching elements each having a first electrode disposed on a first side in the thickness direction and through which a main current flows;
  • the device includes a main connection member connected to the first electrode of the switching element, and a first sub-connection member and a second sub-connection member connected to the main connection member.
  • the main connection member has a first main metal as a main component
  • the first sub-connection member has a first sub-metal as a main component
  • the second sub-connection member has a second sub-metal as a main component.
  • the first sub-metal and the second sub-metal have different thermoelectric powers.
  • FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 9 is a sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a sectional view taken along line XX in FIG. 1.
  • FIG. 11 is a cross-sectional view taken along line XI-XI in FIG.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG.
  • FIG. 13 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13.
  • FIG. 15 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15.
  • FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 15.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15.
  • FIG. 18 is an enlarged plan view of main parts showing a first modification of the semiconductor device according to the third embodiment of the present disclosure.
  • FIG. 19 is an enlarged plan view of main parts showing a first modification of the semiconductor device according to the third embodiment of the present disclosure.
  • FIG. 20 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 21 is a sectional view taken along line XXI-XXI in FIG. 20.
  • FIG. 22 is a plan view showing a first modification of the semiconductor device according to the fourth embodiment of the present disclosure.
  • FIG. 23 is a plan view showing a semiconductor device according to a fifth embodiment of the present disclosure.
  • a thing A is formed on a thing B and "a thing A is formed on a thing B” mean “a thing A is formed on a thing B” unless otherwise specified.
  • "something A is placed on something B” and “something A is placed on something B” mean "something A is placed on something B” unless otherwise specified.
  • a certain surface A faces (one side or the other side of) direction B is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, and the surface A faces direction B. Including cases where it is tilted to the opposite direction.
  • the semiconductor device A1 of this embodiment includes a first conductive layer 1A, a second conductive layer 1B, a support member 10A, a support member 10B, a plurality of first switching elements 21, a plurality of second switching elements 22, and a first main conductive member. 31, second main conductive member 32, third main conductive member 33, plurality of sub-conductive members 41-48, plurality of first main connection members 51, plurality of second main connection members 52, plurality of sub-connection members 61- 68 and sealing resin 7.
  • the semiconductor device A1 converts a DC power supply voltage applied to a first main terminal 311 and a third main terminal 331 (described later) into AC power by a plurality of first switching elements 21 and a plurality of second switching elements 22. Convert.
  • the converted AC power is input to a power supply target such as a motor from a second main terminal 321, which will be described later.
  • the semiconductor device A1 constitutes part of a power conversion circuit such as an inverter. Note that the application and specific configuration of the semiconductor device according to the present disclosure are not limited in any way.
  • FIG. 1 is a plan view showing the semiconductor device A1.
  • FIG. 2 is a plan view of the main parts of the semiconductor device A1, in which the second main connection member 52, the fifth sub-connection member 65, and the sixth sub-connection member 66 are omitted.
  • FIG. 3 is a bottom view showing the semiconductor device A1.
  • FIG. 4 is a side view showing the semiconductor device A1.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 9 is a sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a sectional view taken along line XX in FIG. 1.
  • FIG. 11 is a cross-sectional view taken along line XI-XI in FIG.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG.
  • the thickness direction z corresponds to the thickness direction of the sealing resin 7 (or the first conductive layer 1A, the second conductive layer 1B, etc.) (see, for example, FIG. 5). Further, one direction perpendicular to the thickness direction z is defined as a first direction x, and a direction perpendicular to both the thickness direction z and the first direction x is defined as a second direction y. In FIG. 1, the sealing resin 7 is shown by an imaginary line.
  • the first conductive layer 1A is arranged on the x1 side of the first direction x.
  • the first conductive layer 1A has a first main surface 11A.
  • the first main surface 11A faces the z1 side in the thickness direction z.
  • the first main surface 11A is a flat surface.
  • the first conductive layer 1A is made of a conductive material and includes, for example, Cu (copper).
  • the first main conductive member 31 includes a first main terminal 311 and a first pillow material 319. As shown in FIGS. 1, 3, and 7, the first main terminal 311 protrudes toward the x1 side in the first direction x, and has a portion exposed from the sealing resin 7.
  • the first main terminal 311 is arranged at a position shifted toward the x1 side in the first direction x with respect to the first conductive layer 1A. Further, the first main terminal 311 is arranged at a position shifted toward the y1 side in the second direction y with respect to the first conductive layer 1A.
  • the first main terminal 311 is arranged on the z1 side in the thickness direction z with respect to the first main surface 11A, and is away from the first conductive layer 1A.
  • the first main terminal 311 overlaps the first main surface 11A when viewed in the thickness direction z (also referred to as "planar view").
  • the composition of the first main terminal 311 includes Cu (copper).
  • the first main terminal 311 is provided with a first attachment hole 3111 .
  • the first attachment hole 3111 penetrates the first main terminal 311 in the thickness direction z.
  • the first pillow material 319 is interposed between the first conductive layer 1A and the first main terminal 311, as shown in FIGS. 1 and 7.
  • the composition of the first pillow material 319 includes, for example, Cu (copper).
  • the first pillow material 319 is electrically connected to the first main surface 11A of the first conductive layer 1A and the first main terminal 311.
  • the method of conductive bonding is not limited at all, and a method using a conductive bonding material such as solder, a method such as welding, etc. may be adopted as appropriate.
  • the first conductive layer 1A is supported by a support member 10A.
  • the support member 10A is located on the opposite side of the first main surface 11A with respect to the first conductive layer 1A.
  • the specific configuration of the support member 10A is not limited at all, and in this embodiment, the support member 10A is comprised of a DBC (Direct Bonded Copper) substrate.
  • the support member 10A includes an insulating layer 101, a support layer 102, and a heat dissipation layer 103.
  • the support member 10A is covered with the sealing resin 7 except for a part of the heat dissipation layer 103.
  • the insulating layer 101 includes a portion located between the support layer 102 and the heat dissipation layer 103 in the thickness direction z.
  • the insulating layer 101 is made of a material with higher thermal conductivity.
  • Insulating layer 101 is made of ceramics containing aluminum nitride (AlN), for example.
  • AlN aluminum nitride
  • the support layer 102 is located between the insulating layer 101 and the first conductive layer 1A in the thickness direction z.
  • the composition of the support layer 102 includes copper (Cu).
  • the support layer 102 is surrounded by the periphery of the insulating layer 101 when viewed in the thickness direction z.
  • the support layer 102 is bonded to the first conductive layer 1A via, for example, solder.
  • the heat dissipation layer 103 is located on the opposite side of the support layer 102 with respect to the insulating layer 101 in the thickness direction z. A portion of the heat dissipation layer 103 is exposed from the sealing resin 7.
  • a heat sink (not shown), for example, is bonded to the heat dissipation layer 103.
  • the composition of the heat dissipation layer 103 includes copper.
  • the heat dissipation layer 103 is surrounded by the periphery of the insulating layer 101 when viewed in the thickness direction z.
  • the second conductive layer 1B and the first conductive layer 1A are arranged on the x2 side of the first direction x.
  • the second conductive layer 1B has a second main surface 11B.
  • the second main surface 11B faces the z1 side in the thickness direction z.
  • the second main surface 11B is a flat surface.
  • the second conductive layer 1B is made of a conductive material and includes, for example, Cu (copper).
  • the second main conductive member 32 includes a second main terminal 321 and a second pillow material 329. As shown in FIGS. 1 to 7, the second main terminal 321 protrudes toward the x2 side in the first direction x, and has a portion exposed from the sealing resin 7.
  • the second main terminal 321 is arranged at a position shifted toward the x2 side in the first direction x with respect to the second conductive layer 1B. Further, the center position of the second main terminal 321 in the second direction y substantially coincides with the center position of the second conductive layer 1B in the second direction y.
  • the second main terminal 321 is arranged on the z1 side in the thickness direction z with respect to the second main surface 11B, and is away from the second conductive layer 1B.
  • the second main terminal 321 overlaps the second main surface 11B when viewed in the thickness direction z.
  • the composition of the second main terminal 321 includes Cu (copper).
  • the second main terminal 321 is provided with a second attachment hole 3211.
  • the second attachment hole 3211 penetrates the second main terminal 321 in the thickness direction z.
  • the second pillow material 329 is interposed between the second conductive layer 1B and the second main terminal 321, as shown in FIGS. 1 and 5 to 7.
  • the composition of the second pillow material 329 includes Cu (copper).
  • the second pillow material 329 is electrically connected to the second main surface 11B of the second conductive layer 1B and the second main terminal 321.
  • the method of conductive bonding is not limited at all, and a method using a conductive bonding material such as solder, a method such as welding, etc. may be adopted as appropriate.
  • the second conductive layer 1B is supported by a support member 10B.
  • the support member 10B is located on the opposite side of the second main surface 11B with respect to the second conductive layer 1B.
  • the specific configuration of the support member 10A is not limited at all, and in this embodiment, it has the same configuration as the support member 10A, and its explanation will be omitted.
  • the plurality of first switching elements 21 are bonded to the first main surface 11A of the first conductive layer 1A, as shown in FIGS. 1, 2, and 5 to 8. All of the plurality of first switching elements 21 are the same element.
  • the plurality of first switching elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).
  • the plurality of first switching elements 21 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors), or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors).
  • the plurality of first switching elements 21 are of an n-channel type and have a vertical structure.
  • the plurality of first switching elements 21 include a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • the plurality of first switching elements 21 are arranged along the second direction y.
  • the first switching element 21 has a second electrode 211, a first electrode 212, a third electrode 213, and a fourth electrode 214.
  • the second electrode 211 faces the first main surface 11A of the first conductive layer 1A. A current corresponding to the power before being converted by the first switching element 21 flows through the second electrode 211 . That is, the second electrode 211 corresponds to the drain electrode of the first switching element 21.
  • the second electrode 211 is electrically bonded to the first main surface 11A via the electrically conductive bonding layer 29. Therefore, the second electrodes 211 of the plurality of first switching elements 21 are electrically connected to the first main conductive member 31.
  • the conductive bonding layer 29 is, for example, solder.
  • the conductive bonding layer 29 may be a sintered metal containing silver or the like.
  • the first electrode 212 is located on the z1 side opposite to the second electrode 211 in the thickness direction z. A current corresponding to the power converted by the first switching element 21 flows through the first electrode 212 . That is, the first electrode 212 corresponds to the source electrode of the first switching element 21.
  • the third electrode 213 is located on the same side as the first electrode 212 (z1 side) in the thickness direction z.
  • the third electrode 213 is located on the y1 side in the second direction y with respect to the first electrode 212 when viewed in the thickness direction z.
  • a gate voltage for driving the first switching element 21 is applied to the third electrode 213 . That is, the third electrode 213 is the gate electrode of the first switching element 21.
  • the area of the third electrode 213 is smaller than the area of the first electrode 212 when viewed in the thickness direction z.
  • the fourth electrode 214 is located on the same side as the first electrode 212 (z1 side) in the thickness direction z.
  • the fourth electrode 214 is located on the y1 side in the second direction y with respect to the first electrode 212 when viewed in the thickness direction z.
  • two fourth electrodes 214 are arranged on both sides of the third electrode 213 in the first direction x.
  • the fourth electrode 214 is electrically connected to the first electrode 212 in the first switching element 21, and is a so-called source sense electrode.
  • the area of the fourth electrode 214 is smaller than the area of the first electrode 212 when viewed in the thickness direction z.
  • the plurality of second switching elements 22 are bonded to the second main surface 11B of the second conductive layer 1B, as shown in FIG. 1, FIG. 2, and FIGS. 5 to 7.
  • the plurality of second switching elements 22 are the same elements as the plurality of first switching elements 21. Therefore, the plurality of second switching elements 22 are n-channel type MOSFETs with a vertical structure.
  • the plurality of second switching elements 22 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors), or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors).
  • the plurality of second switching elements 22 are of an n-channel type and have a vertical structure.
  • the plurality of second switching elements 22 include a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • the plurality of second switching elements 22 are arranged along the second direction y.
  • the plurality of second switching elements 22 have a sixth electrode 221, a fifth electrode 222, a seventh electrode 223, and an eighth electrode 224.
  • the sixth electrode 221 faces the second main surface 11B of the second conductive layer 1B. A current corresponding to the power before being converted by the second switching element 22 flows through the sixth electrode 221 . That is, the sixth electrode 221 corresponds to the drain electrode of the second switching element 22.
  • the sixth electrode 221 is conductively bonded to the second main surface 11B via the conductive bonding layer 29. Therefore, the sixth electrodes 221 of the plurality of second switching elements 22 are electrically connected to the second main conductive member 32.
  • the fifth electrode 222 is located on one side opposite to the sixth electrode 221 in the thickness direction z. A current corresponding to the power converted by the second switching element 22 flows through the fifth electrode 222 . That is, the fifth electrode 222 corresponds to the source electrode of the second switching element 22.
  • the seventh electrode 223 is located on the same side as the fifth electrode 222 (z1 side) in the thickness direction z.
  • the seventh electrode 223 is located on the y2 side in the second direction y with respect to the fifth electrode 222 when viewed in the thickness direction z.
  • a gate voltage for driving the second switching element 22 is applied to the seventh electrode 223 . That is, the seventh electrode 223 is the gate electrode of the second switching element 22.
  • the area of the seventh electrode 223 is smaller than the area of the fifth electrode 222 when viewed in the thickness direction z.
  • the eighth electrode 224 is located on the same side as the fifth electrode 222 (z1 side) in the thickness direction z.
  • the eighth electrode 224 is located on the y2 side in the second direction y with respect to the fifth electrode 222 when viewed in the thickness direction z.
  • two eighth electrodes 224 are arranged on both sides of the seventh electrode 223 in the first direction x.
  • the eighth electrode 224 is electrically connected to the fifth electrode 222 in the second switching element 22, and is a so-called source sense electrode.
  • the area of the eighth electrode 224 is smaller than the area of the fifth electrode 222 when viewed in the thickness direction z.
  • the third main conductive member 33 includes an extending portion 332 and a third main terminal 331, as shown in FIGS. 1, 3, and 5 to 8.
  • the third main conductive member 33 is made of a conductive material, and includes, for example, Cu (copper).
  • the third main terminal 331 has a portion that protrudes from the sealing resin 7 toward the x1 side in the first direction x.
  • the third main terminal 331 is located on the y2 side in the second direction y with respect to the first main terminal 311.
  • the third main terminal 331 is arranged at a position shifted toward the x1 side in the first direction x with respect to the second conductive layer 1B.
  • the third main terminal 331 is arranged on the z1 side in the thickness direction z with respect to the first main surface 11A, and is away from the first conductive layer 1A.
  • the third main terminal 331 overlaps the first main surface 11A when viewed in the thickness direction z.
  • the third main terminal 331 is provided with a third attachment hole 3311.
  • the third attachment hole 3311 penetrates the third main terminal 331 in the thickness direction z.
  • the extending portion 332 extends from the third main terminal 331 toward the x2 side in the first direction x, and is covered with the sealing resin 7.
  • the extending portion 332 of this embodiment includes a first portion 3321 and a second portion 3322.
  • the first part 3321 includes a plurality of first switching elements 21 and a plurality of second switching elements 22 in the first direction x, as shown in FIGS. 1, 3, and 5 to 8. located between.
  • the shape of the first portion 3321 is not limited at all, and in this embodiment, it has a shape extending in the second direction y, and is, for example, a flat band shape.
  • the first portion 3321 overlaps with the first main surface 11A (first conductive layer 1A) when viewed in the thickness direction z.
  • the x2 side edge of the first portion 3321 in the first direction x is closer to the x1 side of the first direction x than the x2 side edge of the first main surface 11A in the first direction x. positioned.
  • the second part 3322 is connected to the third main terminal 331 and the first part 3321.
  • the second portion 3322 extends from the third main terminal 331 to the x2 side of the first direction x along the first direction x.
  • the shape of the second portion 3322 is not limited at all, and is, for example, a flat band shape.
  • the second portion 3322 is located on the y2 side in the second direction y with respect to the plurality of first switching elements 21.
  • the plurality of sub-conductive members 41 to 48 are electrically connected to one of the plurality of first switching elements 21 and the plurality of second switching elements 22. As shown in FIGS. 1 to 8, the plurality of sub-conductive members 41 to 48 of this embodiment each extend in the second direction y when viewed in the thickness direction z, and are arranged in the first direction x. There is.
  • the plurality of sub-conductive members 41 to 48 are made of a conductive material, and include, for example, Cu (copper).
  • the plurality of sub-conductive members 41 to 48 will be referred to as a first sub-conductive member 41, a second sub-conductive member 42, a third sub-conductive member 43, a fourth sub-conductive member 44, and a fifth sub-conductive member 45. , a sixth sub-conductive member 46, a seventh sub-conductive member 47, and an eighth sub-conductive member 48.
  • the first sub-conductive member 41 is electrically connected to the first electrode 212 of the first switching element 21.
  • the first sub-conductive member 41 is arranged closer to the x1 side than the edge of the first conductive layer 1A on the x2 side in the first direction x.
  • the first sub-conductive member 41 has a first sub-terminal section 411 and a first sub-wiring section 412.
  • the first sub-terminal portion 411 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the first sub-wiring section 412 is covered with the sealing resin 7.
  • the shape and size of the first sub-wiring section 412 are not limited at all. In the illustrated example, the first sub-wiring section 412 is located on the y1 side in the second direction y with respect to the first conductive layer 1A and the support member 10A.
  • the second sub-conductive member 42 is electrically connected to the first electrode 212 of the first switching element 21.
  • the second sub-conductive member 42 is arranged on the x1 side in the first direction x with respect to the first sub-conductive member 41.
  • the second sub-conductive member 42 has a second sub-terminal section 421 and a second sub-wiring section 422.
  • the second sub-terminal portion 421 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the second sub-wiring section 422 is covered with the sealing resin 7.
  • the shape and size of the second sub-wiring section 422 are not limited at all. In the illustrated example, the second sub-wiring section 422 is located on the y1 side in the second direction y with respect to the first conductive layer 1A and the support member 10A.
  • the third sub-conductive member 43 is electrically connected to the third electrode 213 of the first switching element 21.
  • the third sub-conductive member 43 is arranged between the first sub-conductive member 41 and the second sub-conductive member 42 in the first direction x.
  • the third sub-conductive member 43 has a third sub-terminal section 431 and a third sub-wiring section 432.
  • the third sub-terminal portion 431 protrudes from the sealing resin 7, and in the illustrated example extends toward the z1 side in the thickness direction z.
  • the third sub-wiring section 432 is covered with the sealing resin 7.
  • the shape and size of the third sub-wiring section 432 are not limited at all.
  • the third sub-wiring section 432 overlaps the first conductive layer 1A when viewed in the thickness direction z. Further, the third sub-wiring section 432 has a portion that faces the plurality of first switching elements 21 on the x1 side in the first direction x.
  • the fourth sub-conductive member 44 is electrically connected to the fourth electrode 214 of the first switching element 21.
  • the fourth sub-conductive member 44 is arranged between the first sub-conductive member 41 and the second sub-conductive member 42 in the first direction x. Further, the fourth sub-conductive member 44 is arranged between the second sub-conductive member 42 and the third sub-conductive member 43 in the first direction x.
  • the fourth sub-conductive member 44 has a fourth sub-terminal section 441 and a fourth sub-wiring section 442.
  • the fourth sub-terminal portion 441 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the fourth sub-wiring section 442 is covered with the sealing resin 7.
  • the shape and size of the fourth sub-wiring section 442 are not limited at all.
  • the fourth sub-wiring section 442 overlaps the first conductive layer 1A when viewed in the thickness direction z. Further, the fourth sub-wiring section 442 has a portion that faces the plurality of first switching elements 21 on the x1 side in the first direction x.
  • the fifth sub-conductive member 45 is electrically connected to the fifth electrode 222 of the second switching element 22.
  • the fifth sub-conductive member 45 is arranged closer to the x2 side than the edge of the second conductive layer 1B on the x1 side in the first direction x.
  • the fifth sub-conductive member 45 has a fifth sub-terminal section 451 and a fifth sub-wiring section 452.
  • the fifth sub-terminal portion 451 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the fifth sub-wiring section 452 is covered with the sealing resin 7.
  • the shape and size of the fifth sub-wiring section 452 are not limited at all. In the illustrated example, the fifth sub-wiring section 452 is located on the y1 side in the second direction y with respect to the second conductive layer 1B and the support member 10B.
  • the sixth sub-conductive member 46 is electrically connected to the fifth electrode 222 of the second switching element 22.
  • the sixth sub-conductive member 46 is arranged on the x2 side of the first direction x with respect to the fifth sub-conductive member 45.
  • the sixth sub-conductive member 46 has a sixth sub-terminal section 461 and a sixth sub-wiring section 462.
  • the sixth sub-terminal portion 461 protrudes from the sealing resin 7, and in the illustrated example extends toward the z1 side in the thickness direction z.
  • the sixth sub-wiring section 462 is covered with the sealing resin 7.
  • the shape and size of the sixth sub-wiring section 462 are not limited at all. In the illustrated example, the sixth sub-wiring section 462 is located on the y1 side in the second direction y with respect to the second conductive layer 1B and the support member 10B.
  • the seventh sub-conductive member 47 is electrically connected to the seventh electrode 223 of the second switching element 22.
  • the seventh sub-conductive member 47 is arranged between the fifth sub-conductive member 45 and the sixth sub-conductive member 46 in the first direction x.
  • the seventh sub-conductive member 47 has a seventh sub-terminal section 471 and a seventh sub-wiring section 472.
  • the seventh sub-terminal portion 471 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the seventh sub-wiring section 472 is covered with the sealing resin 7.
  • the shape and size of the seventh sub-wiring section 472 are not limited at all.
  • the seventh sub-wiring section 472 overlaps the second conductive layer 1B when viewed in the thickness direction z. Furthermore, the seventh sub-wiring section 472 has a portion that faces the plurality of second switching elements 22 on the x2 side in the first direction x.
  • the eighth sub-conductive member 48 is electrically connected to the eighth electrode 224 of the second switching element 22.
  • the eighth sub-conductive member 48 is arranged between the fifth sub-conductive member 45 and the sixth sub-conductive member 46 in the first direction x. Further, the eighth sub-conductive member 48 is disposed between the sixth sub-conductive member 46 and the seventh sub-conductive member 47 in the first direction x.
  • the eighth sub-conductive member 48 has an eighth sub-terminal section 481 and an eighth sub-wiring section 482.
  • the eighth sub-terminal portion 481 protrudes from the sealing resin 7, and in the illustrated example, extends toward the z1 side in the thickness direction z.
  • the eighth sub-wiring section 482 is covered with the sealing resin 7.
  • the shape and size of the eighth sub-wiring section 482 are not limited at all.
  • the eighth sub-wiring section 482 overlaps the second conductive layer 1B when viewed in the thickness direction z. Further, the eighth sub-wiring section 482 has a portion that faces the plurality of second switching elements 22 on the x2 side in the first direction x.
  • the plurality of first main connection members 51 individually connect the plurality of first switching elements 21 and the second conductive layer 1B.
  • the first main connection member 51 is connected to the first electrode 212 of the first switching element 21 and the second main surface 11B of the second conductive layer 1B.
  • the specific configuration of the first main connection member 51 is not limited at all.
  • the first main connection member 51 has a first main metal as a main component.
  • the first main metal includes, for example, Cu (copper), Al (aluminum), etc., and alloys thereof.
  • the first main metal of the first main connection member 51 of this example is Cu (copper).
  • the first main connection member 51 is formed by appropriately cutting, bending, etc. on a metal plate material.
  • the first main connection member 51 of this embodiment has a communication portion 511, a first connection portion 512, a third connection portion 513, a step portion 514, and a step portion 515.
  • the first connection part 512 is a part connected to the first electrode 212.
  • the first main connection member 51 has two first connection parts 512.
  • the two second main connection members 52 each extend in the first direction x and are lined up in the second direction y.
  • the two first connection parts 512 are connected to one first electrode 212 via, for example, a conductive bonding material.
  • the third connection portion 513 is a portion connected to the second main surface 11B of the second conductive layer 1B via, for example, a conductive bonding material.
  • the communication part 511 is a part interposed between the first connection part 512 and the third connection part 513.
  • the communication portion 511 has a band shape extending in the first direction x. Further, the communication part 511 is located on the z1 side in the thickness direction z with respect to the first connection part 512 and the third connection part 513, and is located on the z2 side in the thickness direction z with respect to the first part 3321. are doing.
  • the stepped portion 514 is a portion that connects the first connecting portion 512 and the communication portion 511.
  • the stepped portion 514 has a stepped shape when viewed in the second direction y.
  • the stepped portion 515 is a portion that connects the third connecting portion 513 and the communication portion 511.
  • the stepped portion 515 has a stepped shape when viewed in the second direction y.
  • the plurality of second main connection members 52 individually conduct the plurality of second switching elements 22 and the third main conductive member 33, as shown in FIGS. 1 and 5 to 7.
  • the second main connection member 52 is connected to the fifth electrode 222 of the second switching element 22 and the first portion 3321 of the extension portion 332 of the third main conduction member 33 .
  • the specific configuration of the plurality of second main connection members 52 is not limited at all, and in this embodiment, the plurality of second main connection members 52 are integrally formed with the third main conductive member 33. Unlike this embodiment, the plurality of 52 and the third main conductive member 33 may be constituted by separate members.
  • the second main connection member 52 has a second main metal as a main component.
  • the second main metal includes, for example, Cu (copper), Al (aluminum), and alloys thereof.
  • the second main metal of the second main connection member 52 in this example is Cu (copper).
  • the number of the plurality of second main connection members 52 is not limited at all, and in the illustrated example, two second main connection members 52 are connected to the fifth electrode 222 of one second switching element 22.
  • the second main connection member 52 has a communication portion 521, a second connection portion 522, and a stepped portion 523.
  • the second connection part 522 is a part connected to the fifth electrode 222.
  • the communication portion 521 is a portion interposed between the second connection portion 522 and the first portion 3321 of the third main conductive member 33.
  • the communication portion 521 has a band shape extending in the first direction x. Further, the communication portion 521 is located on the z1 side in the thickness direction z with respect to the second connection portion 522. Further, the communication portion 521 is located on the z1 side in the thickness direction z with respect to the communication portion 511.
  • the stepped portion 523 is a portion that connects the second connecting portion 522 and the communication portion 521.
  • the step portion 523 has a step shape when viewed in the second direction y.
  • the plurality of sub-connection members 61 to 68 are electrically connected to one of the plurality of first switching elements 21 and the plurality of second switching elements 22.
  • the plurality of sub-connection members 61 to 68 will be referred to as a first sub-connection member 61, a second sub-connection member 62, a third sub-connection member 63, a fourth sub-connection member 64, and a fifth sub-connection member 65.
  • a sixth sub-connection member 66, a seventh sub-connection member 67, and an eighth sub-connection member 68 will be referred to as a first sub-connection member 61, a second sub-connection member 62, a third sub-connection member 63, a fourth sub-connection member 64, and a fifth sub-connection member 65.
  • a sixth sub-connection member 66, a seventh sub-connection member 67, and an eighth sub-connection member 68 are examples of the plurality of sub-connection members 61 to 68.
  • the first sub-connection member 61 connects the first switching element 21 and the first sub-conductive member 41. In the illustrated example, it is connected to one first connection portion 512 of the first main connection member 51 located closest to y1 in the second direction y. That is, the first sub-connection member 61 is connected to a portion of the first main connection member 51 that overlaps with the first switching element 21 when viewed in the thickness direction z.
  • the specific structure of the first sub-connection member 61 is not limited in any way, and may be a wire, a ribbon, etc. whose main component is the first sub-metal.
  • the first sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the first sub-metal of the first sub-connection member 61 in this example is Cu (copper).
  • the thickness of the first sub-connection member 61 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m. The thickness of the first sub-connection member 61 is thinner than the thickness of the first main connection member 51.
  • the second sub-connection member 62 connects the first switching element 21 and the second sub-conductive member 42.
  • the second sub-connection member 62 is connected to one first connection portion 512 of the first main connection member 51 located closest to y1 in the second direction y. ing. That is, the first sub-connection member 61 and the second sub-connection member 62 are connected to the same first connection portion 512. Further, the second sub-connection member 62 is connected to a portion of the first main connection member 51 that overlaps with the first switching element 21 when viewed in the thickness direction z.
  • the specific configuration of the second sub-connection member 62 is not limited at all, and may be a wire, a ribbon, etc. whose main component is a second sub-metal.
  • the second sub-metal is a metal having a thermoelectric power different from that of the first sub-metal, and includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the second sub-metal of the second sub-connection member 62 of this example is constantan, which is an example of an alloy of Cu (copper) and Ni (nickel).
  • the thickness of the second sub-connecting member 62 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the thickness of the second sub-connection member 62 is thinner than the thickness of the first main connection member 51.
  • the first sub-connection member 61 and the second sub-connection member 62 have different thermoelectric capacities and are used, for example, as a thermocouple.
  • the third sub-connection member 63 connects the first switching element 21 and the third sub-conductive member 43.
  • the plurality of third sub-connection members 63 are connected to the third electrodes 213 of the plurality of first switching elements 21 and the third sub-wiring portion 432 of the third sub-conductive member 43.
  • the specific structure of the third sub-connection member 63 is not limited at all, and may be a wire, a ribbon, etc. whose main component is a third sub-metal.
  • the third sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the third sub-metal of the third sub-connection member 63 in this example is Al (aluminum).
  • the thickness of the third sub-connection member 63 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the fourth sub-connection member 64 connects the first switching element 21 and the fourth sub-conductive member 44.
  • the plurality of fourth sub-connection members 64 are connected to the fourth electrodes 214 of the plurality of first switching elements 21 and the fourth sub-wiring portion 442 of the fourth sub-conductive member 44 .
  • the specific structure of the fourth sub-connection member 64 is not limited at all, and may be a wire, a ribbon, etc. whose main component is a fourth sub-metal.
  • the fourth sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the fourth sub-metal of the fourth sub-connection member 64 in this example is Cu (copper).
  • the thickness of the fourth sub-connection member 64 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the fifth sub-connection member 65 connects the second switching element 22 and the fifth sub-conductive member 45. In the illustrated example, it is connected to one second connection portion 522 of the second main connection member 52 located closest to y1 in the second direction y. That is, the fifth sub-connection member 65 is connected to a portion of the second main connection member 52 that overlaps with the second switching element 22 when viewed in the thickness direction z.
  • the specific structure of the fifth sub-connection member 65 is not limited at all, and may be a wire, a ribbon, etc. whose main component is the fifth sub-metal.
  • the fifth sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the fifth sub-metal of the fifth sub-connection member 65 in this example is Cu (copper).
  • the thickness of the fifth sub-connection member 65 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m. The thickness of the fifth sub-connection member 65 is thinner than the thickness of the second main connection member 52.
  • the sixth sub-connection member 66 connects the second switching element 22 and the sixth sub-conductive member 46.
  • the sixth sub-connection member 66 is connected to one second connection portion 522 of the second main connection member 52 located closest to y1 in the second direction y. ing. That is, the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the same second connection portion 522. Further, the sixth sub-connection member 66 is connected to a portion of the second main connection member 52 that overlaps with the second switching element 22 when viewed in the thickness direction z.
  • the specific configuration of the sixth sub-connection member 66 is not limited at all, and may be a wire, a ribbon, etc. whose main component is the sixth sub-metal.
  • the sixth sub-metal is a metal having a different thermoelectric power from the fifth sub-metal, and includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the sixth sub-metal of the sixth sub-connection member 66 of this example is constantan, which is an example of an alloy of Cu (copper) and Ni (nickel).
  • the thickness of the sixth sub-connection member 66 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the thickness of the sixth sub-connection member 66 is thinner than the thickness of the second main connection member 52.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 have different thermoelectric capacities, and are used, for example, as a thermocouple.
  • the seventh sub-connection member 67 connects the second switching element 22 and the seventh sub-conductive member 47.
  • the plurality of seventh sub-connection members 67 are connected to the seventh electrodes 223 of the plurality of second switching elements 22 and the seventh sub-wiring portion 472 of the seventh sub-conductive member 47 .
  • the specific structure of the seventh sub-connection member 67 is not limited at all, and may be a wire, a ribbon, etc. whose main component is the seventh sub-metal.
  • the seventh sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the seventh sub-metal of the seventh sub-connection member 67 in this example is Al (aluminum).
  • the thickness of the seventh sub-connection member 67 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the eighth sub-connection member 68 connects the second switching element 22 and the eighth sub-conductive member 48.
  • the plurality of eighth sub-connection members 68 are connected to the eighth electrodes 224 of the plurality of second switching elements 22 and the eighth sub-wiring section 482 of the eighth sub-conductive member 48 .
  • the specific structure of the eighth sub-connection member 68 is not limited at all, and may be a wire, a ribbon, etc. whose main component is the eighth sub-metal.
  • the eighth sub-metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the eighth sub-metal of the eighth sub-connection member 68 in this example is Cu (copper).
  • the thickness of the eighth sub-connection member 68 is not limited at all, and for example, the width when viewed in the thickness direction z is about 150 ⁇ m.
  • the sealing resin 7 includes a first conductive layer 1A, a second conductive layer 1B, a plurality of first switching elements 21, a plurality of second switching elements 22, and a plurality of first main connections. It covers the member 51, the plurality of second main connection members 52, and the plurality of sub connection members 61 to 68. Further, the sealing resin 7 is applied to each of the first main conductive member 31, the second main conductive member 32, and the third main conductive member 33, and to each of the plurality of sub-conductive members 41 to eighth sub-conductive members 48. and a portion of each of the supporting member 10A and the supporting member 10B.
  • the sealing resin 7 has electrical insulation properties.
  • the sealing resin 7 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 7 has a top surface 71, a bottom surface 72, a first side surface 73, a second side surface 74, a third side surface 75, and a fourth side surface 76.
  • the top surface 71 is a surface facing the z1 side in the thickness direction z.
  • the bottom surface 72 is a surface facing the z2 side in the thickness direction z.
  • the first side surface 73 is a surface facing the x1 side in the first direction x.
  • a first main terminal 311 and a third main terminal 331 protrude from the first side surface 73.
  • the second side surface 74 is a surface facing the x2 side in the first direction x.
  • a second main terminal 321 protrudes from the second side surface 74.
  • the third side surface 75 is a surface facing the y1 side in the second direction y.
  • the fourth side surface 76 is a surface facing the y2 side in the second direction y.
  • a plurality of sub-conductive members 41 to 48 protrude from the third side surface 75.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to the first main connection member 51. Therefore, for example, in the first electrode 212, there is no need to secure an area for connecting the first sub-connecting member 61 and the second sub-connecting member 62, apart from the area to which the first main connecting member 51 is connected. . Therefore, the first switching element 21 can be made smaller. Further, the first sub-metal of the first sub-connection member 61 and the second sub-metal of the second sub-connection member 62 have different thermoelectric powers. Thereby, it is possible to monitor the temperature at the location where the first sub-connection member 61 and the second sub-connection member 62 are connected. Therefore, a wider variety of connection members can be connected.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to a portion of the first main connection member 51 that overlaps with the first switching element 21 when viewed in the thickness direction z. Thereby, the temperature of the first switching element 21 can be monitored more accurately. Furthermore, in this embodiment, the first sub-connection member 61 and the second sub-connection member 62 are connected to the first connection portion 512 of the first main connection member 51. This is suitable for monitoring the temperature of the first switching element 21.
  • a fifth sub-connection member 65 and a sixth sub-connection member 66 are connected to the second main connection member 52. Therefore, for example, in the fifth electrode 222, there is no need to secure an area for connecting the fifth sub-connecting member 65 and the sixth sub-connecting member 66, apart from the area to which the second main connecting member 52 is connected. . Therefore, the second switching element 22 can be made smaller. Furthermore, the fifth sub-metal of the fifth sub-connection member 65 and the sixth sub-metal of the sixth sub-connection member 66 have different thermoelectric capacities. Thereby, it is possible to monitor the temperature at the location where the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected. Therefore, a wider variety of connection members can be connected.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to a portion of the second main connection member 52 that overlaps with the second switching element 22 when viewed in the thickness direction z. Thereby, the temperature of the second switching element 22 can be monitored more accurately. Furthermore, in this embodiment, the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the second connection portion 522 of the second main connection member 52. This is suitable for monitoring the temperature of the second switching element 22.
  • the semiconductor device A2 of this embodiment differs from the above-described embodiments in the configuration of the plurality of second main connection members 52.
  • the second main connection member 52 of this embodiment has a communication portion 521, two second connection portions 522, and two step portions 523.
  • the communication portion 521 is connected to the first portion 3321 and has a band shape extending in the first direction x.
  • the communication portion 521 is arranged at a position that does not overlap with the plurality of second switching elements 22 in the second direction y.
  • a certain communication section 521 is arranged between the second switching elements 22 adjacent to each other in the second direction y.
  • the other communication portion 521 is located closer to the y1 side than the second switching element 22 located closest to the y1 side in the second direction y. Further, the other communication portion 521 is located closer to the y2 side than the second switching element 22 located closest to the y2 side in the second direction y.
  • the two second connecting parts 522 are arranged on both sides in the second direction y with respect to the end of the communication part 521 on the x2 side in the first direction x.
  • the two second connection parts 522 are individually connected to the fifth electrodes 222 of the second switching elements 22 adjacent in the second direction y. That is, the second connection portions 522 of two second main connection members 52 adjacent to each other in the second direction y are connected to the fifth electrode 222 of one second switching element 22 .
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the second connection part 522 located closest to the y1 side in the second direction y among the plurality of second connection parts 522. .
  • the two step portions 523 are individually connected to the two second connection portions 522 and the communication portion 521.
  • the stepped portion 523 has a stepped shape when viewed in the first direction x.
  • connection members 21 and the second switching element 22 it is possible to connect a wider variety of connection members while reducing the size of the first switching element 21 and the second switching element 22.
  • the specific configuration of the second main connection member 52 is not limited at all.
  • the semiconductor device A3 of this embodiment differs from the above-described embodiments in that it includes a third main connection member 53 and a fourth main connection member 54.
  • the third main connection member 53 is an example of the main connection member in the second aspect of the present disclosure.
  • the configurations of the first main connection member 51 and the second main connection member 52 are different from those of the above-described embodiment.
  • the third main connection member 53 connects the first electrodes 212 of adjacent first switching elements 21 to each other.
  • the specific configuration of the third main connection member 53 is not limited at all.
  • the metal that is the main component of the third main connection member 53 includes, for example, Cu (copper), Al (aluminum), and alloys thereof.
  • the third main connection member 53 of this example has Cu (copper) as its main component.
  • the third main connection member 53 is formed by appropriately cutting, bending, etc. on a metal plate material.
  • the third main connection member 53 has a plurality of communication portions 531, a plurality of fourth connection portions 532, and a plurality of step portions 533.
  • the plurality of fourth connection parts 532 are individually connected to the first electrodes 212 of the plurality of first switching elements 21.
  • the fourth connecting portion 532 has a rectangular shape, for example.
  • Each of the plurality of communication parts 531 is arranged between adjacent fourth connection parts 532 in the second direction y.
  • the communication portion 531 is located on the z1 side in the thickness direction z with respect to the fourth connection portion 532.
  • Each of the plurality of step portions 533 is connected to the fourth connection portion 532 and the communication portion 531.
  • the step portion 533 has a step shape when viewed in the first direction x.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to the fourth connection part 532 located closest to y1 in the second direction y among the plurality of fourth connection parts 532. There is.
  • the plurality of first main connection members 51 of the present embodiment are individually connected to the plurality of fourth connection parts 532 of the third main connection member 53 and the second main surface 11B of the second conductive layer 1B.
  • the first main connection member 51 has a first main metal as a main component.
  • the first main metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the first main metal of the first main connection member 51 of this example is Cu (copper).
  • the thickness of the first main connecting member 51 is not limited at all, and in this embodiment, the width when viewed in the thickness direction z is approximately 400 ⁇ m, for example.
  • the fourth main connection member 54 connects the fifth electrodes 222 of adjacent second switching elements 22 to each other.
  • the specific configuration of the fourth main connection member 54 is not limited at all.
  • the metal that is the main component of the fourth main connection member 54 includes, for example, Cu (copper), Al (aluminum), and alloys thereof.
  • the fourth main connection member 54 of this example has Cu (copper) as its main component.
  • the fourth main connecting member 54 is formed by appropriately cutting, bending, etc. on a metal plate material.
  • the fourth main connection member 54 has a plurality of communication portions 541, a plurality of fifth connection portions 542, and a plurality of step portions 543.
  • the plurality of fourth connection parts 532 are individually connected to the fifth electrodes 222 of the plurality of second switching elements 22.
  • the fourth connecting portion 532 has a rectangular shape, for example.
  • Each of the plurality of communication parts 541 is arranged between adjacent fifth connection parts 542 in the second direction y.
  • the communication portion 541 is located on the z1 side in the thickness direction z with respect to the fifth connection portion 542.
  • Each of the plurality of step portions 543 is connected to the fifth connection portion 542 and the communication portion 541.
  • the step portion 543 has a step shape when viewed in the first direction x.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the fifth connection part 542 located closest to y1 in the second direction y among the plurality of fifth connection parts 542. .
  • the plurality of second main connection members 52 of this embodiment are individually connected to the plurality of fifth connection parts 542 of the fourth main connection member 54 and the first part 3321 of the third main conductive member 33.
  • the second main connection member 52 has a second main metal as a main component.
  • the second main metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof.
  • the second main metal of the second main connection member 52 in this example is Cu (copper).
  • the thickness of the second main connecting member 52 is not limited at all, and in this embodiment, the width when viewed in the thickness direction z is about 400 ⁇ m, for example.
  • the first electrodes 212 of adjacent first switching elements 21 are electrically connected to each other via the third main connection member 53. Thereby, for example, it is possible to control the plurality of first switching elements 21 more stably.
  • the fifth electrodes 222 of adjacent second switching elements 22 are electrically connected to each other via the fourth main connection member 54. Thereby, for example, it is possible to control the plurality of second switching elements 22 more stably.
  • the semiconductor device A31 of this modification includes four first sub-conductive members 41, a second sub-conductive member 42, a fifth sub-conductive member 45, and a sixth sub-conductive member 46.
  • first sub-connecting members 61 are individually connected to the four first sub-conductive members 41. Furthermore, four second sub-connecting members 62 are individually connected to the four second sub-conductive members 42 .
  • four fifth sub-connecting members 65 are individually connected to the four fifth sub-conductive members 45. Furthermore, four sixth sub-connecting members 66 are individually connected to the four sixth sub-conductive members 46 .
  • the temperature conditions of the four first switching elements 21 can be individually monitored by using the four first sub-terminal parts 411 and the second sub-terminal parts 421 individually. Can be done.
  • the temperature conditions of the four second switching elements 22 can be individually monitored.
  • a plurality of first sub-conductive members 41, a plurality of second sub-conductive members 42, a plurality of fifth sub-conductive members 45, and a plurality of The structure may include a plurality of first sub-connection members 61 , second sub-connection members 62 , fifth sub-connection members 65 , and sixth sub-connection members 66 . Thereby, the temperature status of the plurality of first switching elements 21 and the plurality of second switching elements 22 can be individually monitored.
  • the semiconductor device A4 of this embodiment shows a semiconductor device according to a fourth embodiment of the present disclosure.
  • the configurations of the first main connection member 51 and the second main connection member 52 are different from those of the above-described embodiments.
  • the first connection portion 512 of the first main connection member 51 is connected to the first electrode 212 of the first switching element 21 via the first block 55.
  • the first block 55 is, for example, a metal member whose main component is Cu (copper).
  • the first block 55 is conductively bonded to the first electrode 212 by, for example, a conductive bonding material 59.
  • the first connecting portion 512 is electrically connected to the first block 55 by, for example, laser welding. Therefore, a welded portion M1 is formed by a portion of the first connecting portion 512 and a portion of the first block 55.
  • the third connecting portion 513 is electrically connected to the second conductive layer 1B by, for example, laser welding. Therefore, a welded portion M2 is formed by each of the third connecting portion 513 and a portion of the second conductive layer 1B.
  • the second connection portion 522 of the second main connection member 52 is connected to the sixth electrode 221 of the second switching element 22 via the second block 56.
  • the second block 56 is, for example, a metal member whose main component is Cu (copper).
  • the second block 56 is electrically connected to the fifth electrode 222 by, for example, a conductive bonding material 59.
  • the second connecting portion 522 is electrically connected to the second block 56 by, for example, laser welding. Therefore, a welded portion M3 is formed by a portion of the second connecting portion 522 and a portion of the second block 56.
  • the first main terminal 311 of the first main conductive member 31 is electrically connected to the first pillow material 319 by, for example, laser welding. Therefore, a welded portion M4 is formed by a portion of the first main terminal 311 and a portion of the first pillow material 319.
  • the second main terminal 321 of the second main conductive member 32 is electrically connected to the second pillow material 329 by, for example, laser welding. Therefore, a welded portion M5 is formed by a portion of the second main terminal 321 and a portion of the second pillow material 329.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to the first connection portion 512 of the first main connection member 51. That is, the first sub-connection member 61 and the second sub-connection member 62 are connected on or near the weld M1.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the second connection portion 522 of the second main connection member 52. That is, the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected on or near the weld M3.
  • the welding part M1 or the welding part M3 it is possible to connect a wider variety of connection members while reducing the size of the first switching element 21 and the second switching element 22. Moreover, if a welding defect exists in the welding part M1 or the welding part M3, or if a crack occurs during specification, heat is generated in the welding part M1 or the welding part M3. According to this embodiment, by using the first sub-terminal part 411 and the second sub-terminal part 421, or by using the fifth sub-terminal part 451 and the sixth sub-terminal part 461, the welding part M1 or the welding part It is possible to detect heat generation in the welded portion M3, and to know the presence of welding defects or cracks in the welded portion M1 or welded portion M3.
  • FIG. 22 shows a first modification of the semiconductor device A4.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to the welding portion M4 or to a portion of the first main terminal 311 near the welding portion M4.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the weld portion M5 or to a portion of the second main terminal 321 near the weld portion M5. That is, in this modification, the first sub-connection member 61 and the second sub-connection member 62 are connected at positions separated from the first switching element 21 when viewed in the thickness direction z. Further, the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected at positions separated from the second switching element 22 when viewed in the thickness direction z.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be changed in design in various ways.
  • FIG. 23 shows a semiconductor device according to a fifth embodiment of the present disclosure.
  • the first sub-connection member 61 and the second sub-connection member 62 are connected to the first main surface 11A of the first conductive layer 1A.
  • the first sub-connection member 61 and the second sub-connection member 62 are located adjacent to one of the plurality of first switching elements 21 that is located closest to the y1 side in the second direction y. It is connected.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are connected to the second main surface 11B of the second conductive layer 1B.
  • the fifth sub-connection member 65 and the sixth sub-connection member 66 are located adjacent to one of the plurality of second switching elements 22 that is located closest to the y1 side in the second direction y. It is connected.
  • a first switching element having a first electrode disposed on the first side in the thickness direction and through which a main current flows; a first main connection member connected to the first electrode; comprising a first sub-connection member and a second sub-connection member connected to the first main connection member,
  • the first main connecting member has a first main metal as a main component
  • the first sub-connecting member has a first sub-metal as a main component
  • the second sub-connecting member has a second sub-metal as a main component
  • a semiconductor device wherein the first sub-metal and the second sub-metal have different thermoelectric powers.
  • the semiconductor device according to appendix 1 wherein the first sub-connection member is connected to a portion of the first main connection member that overlaps with the first switching element when viewed in the thickness direction.
  • Appendix 3. The semiconductor device according to appendix 2, wherein the second sub-connection member is connected to a portion of the first main connection member that overlaps with the first switching element when viewed in the thickness direction.
  • Appendix 4. The first main connection member has a first connection part connected to the first electrode, The semiconductor device according to appendix 3, wherein the first sub-connection member is connected to the first connection portion.
  • Appendix 5. The semiconductor device according to appendix 4, wherein the second sub-connection member is connected to the first connection portion.
  • the first switching element has a second electrode arranged on the second side in the thickness direction and through which a main current flows, and a third electrode and a fourth electrode arranged on the first side in the thickness direction. death,
  • the third sub-connection member is connected to the third electrode and has a third sub-metal as a main component, 6.
  • the semiconductor device according to any one of appendices 1 to 5, wherein the fourth sub-connection member is connected to the fourth electrode and contains a fourth sub-metal as a main component. Appendix 7.
  • a first conductive layer having a first main surface facing the first side in the thickness direction and disposed on a first side in a first direction perpendicular to the thickness direction; further comprising a second conductive layer having a second main surface facing the first side in the thickness direction and disposed on the second side in the first direction, The second electrode is electrically connected to the first main surface,
  • a second switching element having a fifth electrode disposed on the first side in the thickness direction and a sixth electrode disposed on the second side; a plurality of second main connection members connected to the fifth electrode; Further comprising a fifth sub-connection member and a sixth sub-connection member connected to the second main connection member, The sixth electrode is electrically connected to the second main surface,
  • the second main connecting member has a second main metal as a main component,
  • the fifth sub-connection member has a fifth sub-metal as a main component,
  • the sixth sub-connection member has a sixth sub-metal as a main component,
  • the semiconductor device according to appendix 8 wherein the fifth sub-connection member is connected to a portion of the second main connection member that overlaps with the second switching element when viewed in the thickness direction.
  • Appendix 10. The semiconductor device according to appendix 9, wherein the sixth sub-connection member is connected to a portion of the second main connection member that overlaps with the second switching element when viewed in the thickness direction.
  • Appendix 11. The second main connection member has a second connection part connected to the fifth electrode, The semiconductor device according to appendix 10, wherein the fifth sub-connection member is connected to the second connection portion.
  • Appendix 12 The semiconductor device according to appendix 11, wherein the sixth sub-connection member is connected to the second connection portion.
  • the second switching element has a seventh electrode and an eighth electrode arranged on the first side in the thickness direction,
  • the seventh sub-connection member is connected to the seventh electrode and has a seventh sub-metal as a main component, 13.
  • Appendix 14 The semiconductor device according to attachment 13, comprising a plurality of the first switching elements arranged in a second direction perpendicular to the thickness direction and the first direction.
  • Appendix 15 comprising a plurality of the second switching elements arranged in the second direction.
  • the first sub-metal is Cu, 16.
  • the third sub-metal is Cu, 17.
  • first switching elements each having a first electrode disposed on the first side in the thickness direction and through which a main current flows; a main connection member connected to the first electrodes of the adjacent first switching elements; comprising a first sub-connection member and a second sub-connection member connected to the main connection member,
  • the main connecting member has a first main metal as a main component
  • the first sub-connection member has a first sub-metal as a main component
  • the second sub-connecting member has a second sub-metal as a main component
  • a semiconductor device wherein the first sub-metal and the second sub-metal have different thermoelectric powers. Appendix 19.
  • first switching elements a plurality of first switching elements; a first conductive layer on which the plurality of first switching elements are mounted; comprising a first sub-connection member and a second sub-connection member connected to the first conductive layer,
  • the first sub-connection member has a first sub-metal as a main component
  • the second sub-connecting member has a second sub-metal as a main component
  • a semiconductor device wherein the first sub-metal and the second sub-metal have different thermoelectric powers.
  • A1, A2, A3, A31, A4, A41, A5 Semiconductor device 1A: First conductive layer 1B: Second conductive layer 7: Sealing resin 10A: Supporting member 10B: Supporting member 11A: First main surface 11B: First 2 main surfaces 21: First switching element 22: Second switching element 29: Conductive bonding layer 31: First main electrically conductive member 32: Second main electrically conductive member 33: Third main electrically conductive member (main electrically conductive member) 41: First Sub-conductive member 42: Second sub-conductive member 43: Third sub-conductive member 44: Fourth sub-conductive member 45: Fifth sub-conductive member 46: Sixth sub-conductive member 47: Seventh sub-conductive member 48: Eighth sub-conductive member Conductive member 51: First main connection member 52: Second main connection member 53: Third main connection member 54: Fourth main connection member 55: First block 56: Second block 59: Conductive bonding material 61: First Sub-connection member 62: Second sub-connection member 63: Third sub-connection member 64: Fourth sub-connection member 65: Fifth sub

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PCT/JP2023/030264 2022-09-15 2023-08-23 半導体装置 WO2024057847A1 (ja)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009293986A (ja) * 2008-06-03 2009-12-17 Denso Corp 半導体装置
WO2020255663A1 (ja) * 2019-06-20 2020-12-24 ローム株式会社 半導体装置及び半導体装置の製造方法
WO2022080122A1 (ja) * 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009293986A (ja) * 2008-06-03 2009-12-17 Denso Corp 半導体装置
WO2020255663A1 (ja) * 2019-06-20 2020-12-24 ローム株式会社 半導体装置及び半導体装置の製造方法
WO2022080122A1 (ja) * 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール

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