WO2024055465A1 - 驱动背板、发光装置及电子设备 - Google Patents

驱动背板、发光装置及电子设备 Download PDF

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Publication number
WO2024055465A1
WO2024055465A1 PCT/CN2022/140927 CN2022140927W WO2024055465A1 WO 2024055465 A1 WO2024055465 A1 WO 2024055465A1 CN 2022140927 W CN2022140927 W CN 2022140927W WO 2024055465 A1 WO2024055465 A1 WO 2024055465A1
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Prior art keywords
electrode
circuit
electrodes
light
micro
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PCT/CN2022/140927
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English (en)
French (fr)
Inventor
陈书志
李佳育
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上海闻泰电子科技有限公司
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Publication of WO2024055465A1 publication Critical patent/WO2024055465A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes

Definitions

  • the present disclosure relates to driving backplanes, light emitting devices and electronic equipment.
  • micro light-emitting diodes When micro light-emitting diodes are bonded to the driving backplane through hot-pressing bonding, it is often necessary to use eutectic metal as the connection medium.
  • the eutectic metal is melted during the hot-pressing process to bond and connect the micro-LEDs respectively.
  • the circuit electrodes of the light-emitting diodes and the circuit electrodes of the driving backplane are bonded and connected to the circuit electrodes of the micro-LEDs and the driving backplane.
  • the size of micro-light-emitting diodes that can be prepared is smaller, resulting in a closer distance between the two electrodes of the micro-light-emitting diodes, thereby driving the distance between adjacent circuit electrodes on the backplane.
  • the distance is also closer, causing the eutectic metal respectively provided on two adjacent circuit electrodes to easily overflow into contact during the hot pressing process, thus easily causing a short circuit problem.
  • the distance between adjacent circuit electrodes on the driving backplane is relatively close, causing the eutectic metal respectively provided on two adjacent circuit electrodes to easily overflow into contact during the hot pressing process. This can easily lead to short circuit problems.
  • a driving backplane a light emitting device and an electronic device are provided.
  • a driving backplane configured to carry micro light-emitting diodes, the driving backplane includes:
  • a driving circuit structure the driving circuit structure is arranged on one side of the substrate, the driving circuit structure includes an insulating layer, a circuit body arranged in the insulating layer and a plurality of circuit electrodes, the insulating layer has a first On the surface, a plurality of circuit electrode spacing arrays are provided on the insulating layer, the first ends of the circuit electrodes are electrically connected to the corresponding circuit bodies, and the second ends of the circuit electrodes extend to the first On the surface, the second end is configured to be bonded to the micro light-emitting diode, and the first surface is also provided with a reserved groove, and the reserved groove is located between two adjacent circuit electrodes.
  • the plurality of circuit electrodes include a plurality of first electrodes and a plurality of second electrodes, and the plurality of first electrodes are spaced opposite to the plurality of second electrodes. It is provided that the reserved grooves are correspondingly provided at intervals between at least one pair of the first electrodes and the second electrodes.
  • At least one retaining wall is protruding from the bottom of the reserved groove.
  • the retaining wall divides the reserved groove into a plurality of sub-slots, and the plurality of sub-slots are The grooves are spaced apart in a direction from the corresponding first electrode to the corresponding second electrode.
  • the retaining wall has a top surface away from the bottom of the groove, and the top surface protrudes from the first surface.
  • the retaining wall is formed by curing an insulating organic material.
  • a plurality of the reserved grooves are correspondingly provided at the intervals between at least one pair of the first electrodes and the second electrodes, and a plurality of the reserved grooves are provided correspondingly.
  • the grooves are spaced apart in a direction from the corresponding first electrode to the corresponding second electrode.
  • the first electrode and the second electrode paired with the first electrode are configured to be connected to one of the micro light-emitting diodes; or,
  • the first electrode and the second electrode paired with the first electrode are configured to connect a plurality of micro-light emitting diodes correspondingly.
  • the first electrode and the second electrode paired with the first electrode are configured to connect a plurality of micro light-emitting diodes correspondingly, the first electrode and the second electrode are both in strip shape.
  • the first electrode and the second electrode paired with the first electrode are arranged oppositely at intervals.
  • a plurality of micro-light-emitting diodes are arranged at intervals, and any one of the micro-light-emitting diodes is correspondingly connected to the first electrode and the pair paired with the first electrode.
  • Second electrode a plurality of micro-light-emitting diodes are arranged at intervals, and any one of the micro-light-emitting diodes is correspondingly connected to the first electrode and the pair paired with the first electrode.
  • the reserved groove penetrates the insulating layer in the direction from the first surface to the substrate.
  • the reserved groove is spaced apart from the circuit body.
  • a eutectic metal layer is provided on each of the circuit electrodes, and the eutectic metal layer is configured to be bonded and connected to the circuit electrode and the micro light-emitting diode respectively.
  • a light-emitting device including a plurality of micro-light-emitting diodes and a driving backplane as described in the above embodiment, a plurality of the micro-light-emitting diodes are arranged in an array, and the micro-light-emitting diodes are connected to the micro-light-emitting diodes through eutectic metal bonding. The second end of the circuit electrode.
  • part of the eutectic metal overflows from the corresponding circuit electrode to be located in the reserved groove.
  • An electronic device includes one or more light-emitting devices as described in the above embodiments.
  • Figure 1 is a schematic top structural view of a driving backplane disclosed in one or more embodiments of the present disclosure
  • Figure 2 is a schematic cross-sectional view along the A-A direction of Figure 1;
  • Figure 3 is a schematic cross-sectional view of another driving backplane disclosed in one or more embodiments of the present disclosure.
  • Figure 4 is a schematic cross-sectional view of yet another driving backplane disclosed in one or more embodiments of the present disclosure
  • Figure 5 is a schematic top structural view of a light-emitting device disclosed in one or more embodiments of the present disclosure
  • Figure 6 is a schematic cross-sectional view along the B-B direction of Figure 5;
  • FIG. 7 is a schematic three-dimensional structural diagram of an electronic device disclosed in one or more embodiments of the present disclosure.
  • Driving backplane 1 substrate 10; driving circuit structure 11; insulating layer 110; first surface 110a; circuit body 111; circuit electrode 112; first end 1121; second end 1122; first electrode 112a; second electrode 112b; Reserved slot 12; slot bottom 120; sub-trough 121; retaining wall 13; top surface 130; eutectic metal layer 14; eutectic metal block 140; light emitting device 2; micro light emitting diode 20; eutectic metal 21; electronic equipment 3 .
  • first, second, etc. in the description and claims of the present disclosure are used to distinguish different objects, rather than to describe a specific order of objects.
  • first camera and the second camera are used to distinguish different cameras, rather than to describe a specific order of the cameras.
  • words such as “exemplary” or “for example” mean examples, illustrations or explanations. Any embodiment or design described as “exemplary” or “such as” in the present disclosure is not intended to be construed as preferred or advantageous over other embodiments or designs. To be precise, the use of words such as “exemplary” or “such as” is intended to present relevant concepts in a specific manner. In addition, in the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "plurality" refers to both one or more than two.
  • FIG. 1 is a schematic top structural view of a driving backplane disclosed in one or more embodiments of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view along the A-A direction of FIG. 1 .
  • the first aspect of the embodiment of the present disclosure discloses a driving backplane 1 for carrying micro-light-emitting diodes and driving the micro-light-emitting diodes to emit light, thereby forming a light-emitting device as a light source for applications including but not limited to display screens, Projectors, VR (Virtual Reality, Virtual Reality) glasses, AR (Augmented Reality, Augmented Reality) glasses, lamps and other electronic devices that can realize light-emitting display functions or light-emitting functions.
  • VR Virtual Reality, Virtual Reality
  • AR Augmented Reality
  • lamps and other electronic devices that can realize light-emitting display functions or light-emitting functions.
  • the driving backplane 1 includes a substrate 10 and a driving circuit structure 11 .
  • the driving circuit structure 11 is disposed on one side of the substrate 10 .
  • the driving circuit structure 11 includes an insulating layer 110 , a circuit body 111 disposed in the insulating layer 110 , and a plurality of circuit electrodes 112 .
  • the circuit body 111 is formed into a driving backplane 1 It includes a driving circuit, the insulating layer 110 has a first surface 110a, a plurality of circuit electrodes 112 are arranged in a spaced array on the insulating layer 110, the first end 1121 of the circuit electrode 112 is electrically connected to the corresponding circuit body 111, and the second end of the circuit electrode 112 The end 1122 extends to be located on the first surface 110a, and the second end 1122 is used for bonding to the micro light-emitting diode.
  • the first surface 110a is also provided with a reserved groove 12, and the reserved groove 12 is located at two adjacent circuit electrodes 112 Among them, for the convenience of observation, only two circuit electrodes 112 included in the driving circuit structure 11 are shown in FIGS. 1 and 2 .
  • the specific number of circuit electrodes 112 included in the driving circuit structure 11 can be selected according to actual needs. , the drawings of this application do not limit the specific number of circuit electrodes 112 included in the driving circuit structure 11 .
  • the reserved grooves 12 can accommodate the eutectic metal overflowing from the corresponding circuit electrode 112, thereby increasing the eutectic metal's strength. overflow path, thereby reducing the risk of the eutectic metal on two adjacent circuit electrodes 112 overflowing into contact with each other.
  • the reserved groove 12 can be spaced apart from the circuit body 111 , in other words, the reserved groove 12 can be located outside the circuit body 111 , thereby avoiding overflow to the reserved groove 12
  • the insulating layer 110 may include but is not limited to SiOx (x silicon oxide), SiNy (y silicon nitride), AlOx (x aluminum oxide), SiOxNy (y nitride x silicon oxide) ) and other materials, where x represents the number of oxygen atoms in the molecules of the material, and y represents the number of nitrogen atoms in the molecules of the material, so that the insulating layer 110 can have insulating properties at the same time, It is suitable for yellow light technology or semiconductor technology, thereby facilitating the placement of the circuit body 111 and circuit electrodes 112 in the insulating layer 110 .
  • the circuit electrode 112 may include but is not limited to ITO (Indium Tin Oxide, tin-doped indium oxide), IZO (indium zinc oxide), Cu (copper), Ti (titanium) , Al (aluminum), Mo (molybdenum), MoTi (titanium molybdenum) and other materials, or including ITO (Indium Tin Oxide, tin-doped indium oxide), IZO (indium zinc oxide), Cu (copper), Ti (titanium ), Al (aluminum), Mo (molybdenum), MoTi (titanium molybdenide) and other alloys.
  • ITO Indium Tin Oxide, tin-doped indium oxide
  • IZO indium zinc oxide
  • Cu copper
  • the micro light-emitting diode in order to form an electrical circuit inside a micro light-emitting diode, the micro light-emitting diode usually includes two electrodes. Therefore, one micro light-emitting diode can be connected to two circuit electrodes 112 correspondingly. In other words, two adjacent circuit electrodes 112 can be connected to each other. The circuit electrodes 112 are correspondingly connected to the same micro light-emitting diode.
  • the plurality of circuit electrodes 112 may include a plurality of first electrodes 112a and a plurality of second electrodes 112b.
  • the plurality of first electrodes 112a are respectively arranged opposite to the plurality of second electrodes 112b.
  • One electrode 112a and the second electrode 112b can be respectively connected to the same micro light-emitting diode.
  • the first electrode 112a and the second electrode 112b paired with the first electrode 112a are configured to be correspondingly connected to a micro light-emitting diode.
  • the distance between the pair of first electrodes 112a and the second electrode 112b corresponding to the same micro light emitting diode is also small, so they are respectively provided on the pair of first electrodes 112a and the second electrode 112b.
  • the eutectic metal on the two electrodes 112b is more likely to overflow into contact with each other during the hot pressing process, thereby easily causing a short circuit problem.
  • at least one pair of first electrodes 112a and second electrodes 112b are provided with reserved grooves 12 at the intervals between them, thereby effectively reducing the corresponding first electrodes 112a and 112b. Risk of short circuit between electrode 112a and second electrode 112b.
  • the same pair of third circuit electrodes 112 can be made.
  • One electrode 112a and the second electrode 112b are used to connect a plurality of micro light emitting diodes correspondingly.
  • the first electrode 112a and the second electrode 112b paired with the first electrode 112a are configured to connect a plurality of micro light emitting diodes correspondingly.
  • the first electrode 112 a and the second electrode 112 b can both be elongated, so that the lengths of the first electrode 112 a and the second electrode 112 b along their length direction S are longer. To provide a larger connectable area for multiple micro-LEDs.
  • first electrode 112a and the second electrode 112b can be arranged substantially parallel, that is, along the direction perpendicular to the length direction S of the first electrode 112a, the first electrode 112a and the second electrode paired with the first electrode 112a.
  • 112b can be arranged relatively at intervals.
  • a plurality of micro-light-emitting diodes 20 are arranged at intervals along the length direction S of the first electrode 112a and the second electrode 112b, and one electrode (not shown in the figure) of the plurality of micro-light-emitting diodes 20 is electrically connected.
  • first electrode 112a another electrode (not shown in the figure) of the plurality of micro light-emitting diodes 20 is electrically connected to the second electrode 112b, so that along the length direction S of the first electrode 112a and the second electrode 112b, there are many
  • the spacing distance between the micro light-emitting diodes 20 can be relatively close without further reducing the spacing between the plurality of circuit electrodes 112 along the length direction S of the first electrode 112a and the second electrode 112b, as shown in Figure 1.
  • the arrow in Figure 1 shows the length direction S.
  • the reserved groove 12 can penetrate the insulating layer 110 in the direction from the first surface 110 a to the substrate 10 , so that the reserved groove 12 can grow further. Overflow path of eutectic metal.
  • the bottom 120 of the reserved groove 12 may be protruded with at least one retaining wall 13.
  • the retaining wall 13 separates the reserved groove 12 into a plurality of sub-grooves 121.
  • the plurality of sub-grooves 121 are formed along the corresponding first electrodes.
  • the retaining wall 13 can be provided at the bottom 120 of the tank, such as PSPI (photosensitive polyimide photoresist, photosensitive polyimide), PFA (Perfluoroalkoxy, meltable polytetrafluoroethylene), etc.
  • PSPI photosensitive polyimide photoresist, photosensitive polyimide
  • PFA Perfluoroalkoxy, meltable polytetrafluoroethylene
  • the retaining wall 13 may have a top surface 130 away from the tank bottom 120 and protruding from the first surface 110a, so that the retaining wall 13 can achieve greater overflow of the eutectic metal. The effect of flow path.
  • the height difference h can be larger.
  • the height difference h should not be too large.
  • the height difference h can satisfy: 0.5um ⁇ h ⁇ 5um.
  • the height difference h can be 0.5um, 1um, 1.5um, 2um, 2.5um, 3um, 3.5um, 4um, 4.5um or 5um, etc.
  • top surface 130 may also be lower than or flush with the first surface 110a.
  • a plurality of reserved grooves 12 can be provided at the intervals between at least one pair of first electrodes 112a and second electrodes 112b.
  • the reserved grooves 12 are arranged at intervals along the direction from the corresponding first electrode 112a to the corresponding second electrode 112b, so that by arranging a plurality of reserved grooves 12 at intervals, the distance between two adjacent reserved grooves 12 is reduced.
  • the insulating layer 110 is formed as a retaining wall 13 to further increase the overflow path of the eutectic metal without additional steps of setting up the retaining wall 13 to simplify the preparation process of the driving backplane 1 and thus reduce the cost of the driving backplane 1 preparation costs.
  • a eutectic metal layer 14 may be provided on each circuit electrode 112.
  • the eutectic metal layer 14 may include But it is not limited to low melting point alloys made of Sn (tin), Bi (bismuth), In (indium), Sb (antimony), Ga (gallium) and other materials.
  • the eutectic metal layer 14 is used to be bonded to the circuit electrodes 112 and 112 respectively. Tiny light-emitting diodes.
  • the same pair of first electrodes 112a and second electrodes 112b can be used to connect a plurality of micro-light-emitting diodes correspondingly.
  • the plurality of micro-light-emitting diodes are arranged at intervals along the length direction S of the first electrode 112a and the second electrode 112b.
  • the eutectic metal layer 14 on each circuit electrode 112 may include multiple eutectic metal blocks 140 , and the multiple eutectic metal blocks 140 are along each circuit electrode 112 arranged at intervals along the length direction S.
  • the eutectic metal layer 14 may not be provided on each circuit electrode 112, so that before the subsequent step of transferring the micro light-emitting diodes to the driving backplane 1, according to actual needs, For example, according to the size of the micro light-emitting diodes to be transferred, the arrangement density of the micro light-emitting diodes, etc., a eutectic metal is provided on each circuit electrode 112 or on each electrode of the micro light-emitting diode.
  • the driving backplane 1 disclosed in the first aspect of the embodiment of the present disclosure can accommodate self-corresponding components by providing reserved grooves 12 on the first surface 110a of the insulating layer 110 corresponding to the outer periphery of the circuit electrodes 112.
  • the circuit electrodes 112 overflow the eutectic metal and increase the overflow path of the eutectic metal, thereby reducing the risk of the eutectic metal on two adjacent circuit electrodes 112 overflowing into contact with each other.
  • the overflow of the eutectic metal can be further increased. distance, thereby further reducing the risk of the eutectic metal on two adjacent circuit electrodes 112 overflowing into contact with each other.
  • FIG. 5 is a schematic top structural view of a light-emitting device disclosed in one or more embodiments of the present disclosure.
  • FIG. 6 is a schematic cross-sectional view along the B-B direction of FIG. 5 .
  • the second aspect of the embodiment of the present disclosure discloses a light-emitting device 2.
  • the light-emitting device 2 may include but is not limited to a light-emitting panel, an LED (Light-Emitting Diode, light-emitting diode) display screen, LCOS (Liquid crystal on silicon, reflective liquid crystal) ) display screen and LCD (Liquid Crystal Display, liquid crystal) display screen, etc.
  • the light-emitting device 2 can be applied to electronic equipment, the electronic equipment can include but is not limited to mobile phones, tablets, tutoring machines, game consoles, electronic watches, laptop computers , vehicle display screens, projectors, VR (Virtual Reality, Virtual Reality) glasses, AR (Augmented Reality, Augmented Reality) glasses, lamps and other equipment with light-emitting display functions or light-emitting functions, when the light-emitting device 2 is applied to the above-mentioned electronic
  • the light-emitting device 2 can be used as at least one screen or light-emitting source included in the above-mentioned electronic device.
  • the light emitting device 2 includes a plurality of micro light emitting diodes 20 and the driving backplane 1 as described in the first aspect.
  • the plurality of micro light emitting diodes 20 are arranged in an array, and the micro light emitting diodes 20 are made of eutectic metal. 21 is bonded to the second end 1122 of the circuit electrode 112 . Since the driving backplane 1 can reduce the amount of eutectic metal 21 bonded to the two electrodes (not numbered in the figure) of the micro-light-emitting diode 20 after the micro-LED 20 is thermally bonded to the driving back-plane 1, the eutectic metal 21 overflows to the phase. The risk of short circuit can be eliminated, thereby improving the yield rate of the light-emitting device 2 and reducing the manufacturing cost of the light-emitting device 2 .
  • part of the eutectic metal 21 can overflow from the corresponding circuit electrode 112 to the reserved groove 12, so that the reserved groove 12 can effectively increase the overflow distance of the part of the eutectic metal 21 to the adjacent circuit electrode 112, so as to effectively reduce the risk of short circuit between the two electrodes of the micro light-emitting diode 20 through the overflowing eutectic metal 21, thereby effectively improving the yield rate of the light-emitting device 2.
  • the eutectic metal 21 can be formed by thermal pressure bonding from the eutectic metal layer 14 mentioned above (please refer to FIG. 1 and FIG. 2 again), or can be formed after transferring the micro light-emitting diode 20 to the driving back.
  • the step of board 1 according to actual needs, such as the size of the micro light-emitting diodes 20 to be transferred, the arrangement density of the micro light-emitting diodes 20, etc., on each circuit electrode 112, or on each electrode of the micro light-emitting diode 20 settings.
  • FIG. 7 is a schematic three-dimensional structural diagram of an electronic device disclosed in one or more embodiments of the present disclosure.
  • the third aspect of the present disclosure embodiment discloses an electronic device 3.
  • the electronic device 3 may include but is not limited to VR (Virtual Reality, Virtual Reality) glasses, AR (Augmented Reality, Augmented Reality) glasses, projectors, mobile phones, tablets , tutoring machines, game consoles, electronic watches, laptop computers, lamps and vehicle-mounted light-emitting devices 2 and other equipment with light-emitting display functions or light-emitting functions.
  • the electronic device 3 may include one or more light-emitting devices 2 as described in the second aspect above, and the light-emitting device 2 can be used as at least one screen or light source included in the electronic device 3. Since the light-emitting device 2 has a high yield rate and a low manufacturing cost, the electronic device 3 has a high yield rate and a low manufacturing cost.
  • the electronic device 3 is taken as a mobile phone, and the light-emitting device 2 is taken as a display screen included in the electronic device 3 as an example, and a three-dimensional structure of the electronic device 3 is exemplified.
  • the driving backplane, light-emitting device and electronic equipment provided by the present disclosure can accommodate the eutectic metal overflowing from the corresponding circuit electrode through reserved slots, so as to increase the overflow distance of the eutectic metal, thereby reducing the number of adjacent circuit electrodes.
  • the risk of eutectic metal on circuit electrodes overflowing into contact improves the manufacturing yield of light-emitting devices and has strong industrial applicability.

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Abstract

本公开实施例提供了一种驱动背板、发光装置及电子设备。该驱动背板包括基板以及驱动电路结构。该驱动电路结构设置在基板的一侧，该驱动电路结构包括绝缘层、设置于绝缘层内的电路本体以及多个电路电极，该电路本体形成为驱动背板包括的驱动电路，绝缘层具有第一表面，多个电路电极间隔阵列设于绝缘层，电路电极的第一端电连接于对应的电路本体，电路电极的第二端延伸至位于第一表面上，第二端配置成键合连接于微型发光二极管，第一表面还设有预留槽，预留槽位于相邻的两个电路电极之间。从而绝缘层来增长共晶金属的溢流路程，从而降低相邻的两个电路电极上的共晶金属溢流至相接触的风险，从而提升发光装置的良品率。

Description

驱动背板、发光装置及电子设备
相关交叉引用
本公开要求于2022年9月14日提交中国专利局、申请号为202211117044.3、发明名称为“驱动背板、发光装置及电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及驱动背板、发光装置及电子设备。
背景技术
在将微型发光二极管通过热压键合的方式键合连接于驱动背板时，往往需要使用共晶金属作为连接媒介，通过在热压过程中使共晶金属熔化，以分别键合连接于微型发光二极管的电路电极以及驱动背板的电路电极，从而使微型发光二极管的电路电极键合连接于驱动背板的电路电极。
然而，随着制备技术的发展，能够制备得到的微型发光二极管的尺寸更小，导致微型发光二极管的两个电极之间的距离更近，从而，驱动背板上的相邻的电路电极之间的距离也更近，导致分别设于两个相邻的电路电极上的共晶金属容易在热压过程中溢流至相接触，从而易于产生短路的问题。
发明内容
(一)要解决的技术问题
现有技术中，驱动背板上的相邻的电路电极之间的距离较近，导致分别设于两个相邻的电路电极上的共晶金属容易在热压过程中溢流至相接触，从而易于产生短路的问题。
(二)技术方案
根据本公开公开的各种实施例，提供一种驱动背板、发光装置及电子设备。
一种驱动背板，配置成承载微型发光二极管，所述驱动背板包括：
基板；以及
驱动电路结构，所述驱动电路结构设置在所述基板的一侧，所述驱动电路结构包括绝缘层、设置于所述绝缘层内的电路本体以及多个电路电极，所述绝缘层具有第一表面，多个所述电路电极间隔阵列设于所述绝缘层，所述电路电极的第一端电连接于对应的所述电路本体，所述电路电极的第二端延伸至位于所述第一表面上，所述第二端配置成键合连接于所述微型发光二极管，所述第一表面还设有预留槽，所述预留槽位于相邻的两个所述电路电极之间。
作为本公开实施例一种可选的实施方式，多个所述电路电极中，包括多个第一电极以及多个第二电极，多个所述第一电极分别与多个第二电极间隔相对设置，至少一对所述第一电极与所述第二电极之间的间隔处，对应设有所述预留槽。
作为本公开实施例一种可选的实施方式，所述预留槽的槽底凸设有至少一个挡墙，所述挡墙将所述预留槽分隔为多个子槽，多个所述子槽沿自对应的所述第一电极向对应的所述第二电极的方向间隔排列。
作为本公开实施例一种可选的实施方式，所述挡墙具有远离所述槽底的顶面，所述顶面凸出于所述第一表面。
作为本公开实施例一种可选的实施方式，沿自所述绝缘层向所述基板的方向上，所述顶面与所述第一表面之间具有高度差h，0.5um≤h≤5um。
作为本公开实施例一种可选的实施方式，所述挡墙由绝缘有机材料固化形成。
作为本公开实施例一种可选的实施方式，至少一对所述第一电极与所述第二电极之间的间隔处，对应设有多个所述预留槽，多个所述预留槽沿自对应的所述第一电极向对应的所述第二电极的方向间隔排列。
作为本公开实施例一种可选的实施方式，所述第一电极以及与所述第一电极配对的所述第二电极配置成对应连接于一个所述微型发光二极管；或者，
所述第一电极以及与所述第一电极配对的所述第二电极配置成对应连接多个所述微型发光二极管。
作为本公开实施例一种可选的实施方式，所述第一电极以及与所述第一电极配对的所述第二电极配置成对应连接多个所述微型发光二极管时，所述第一电极与所述第二电极均为长条状。
作为本公开实施例一种可选的实施方式，沿垂直于所述第一电极的长度方向的方向上，所述第一电极以及与所述第一电极配对的所述第二电极间隔相对设置；
沿所述第一电极的长度方向上，多个所述微型发光二极管间隔排列，且任意一个所述微型发光二极管均分别对应连接于所述第一电极以及与所述第一电极配对的所述第二电极。
作为本公开实施例一种可选的实施方式，沿自所述第一表面向所述基板的方向上，所述预留槽贯通于所述绝缘层。
作为本公开实施例一种可选的实施方式，所述预留槽与所述电路本体相间隔。
作为本公开实施例一种可选的实施方式，各所述电路电极上均设置有共晶金属层，所述共晶金属层配置成分别键合连接于所述电路电极以及所述微型发光二极管。
一种发光装置，包括多个微型发光二极管以及如上实施方式中所述的驱动背板，多个所述微型发光二极管阵列排布，且所述微型发光二极管通过共晶金属键合连接于所述电路电极的所述第二端。
作为本公开实施例一种可选的实施方式，部分所述共晶金属自对应的所述电路电极溢流至位于所述预留槽内。
一种电子设备，包括一个或多个如上实施方式中所述的发光装置。
本公开的其他特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本公开而了解。本公开的目的和其他优点在说明书、权利要求书以及附图中所特别指出的结构 来实现和获得，本公开的一个或多个实施例的细节在下面的附图和描述中提出。
为使本公开的上述目的、特征和优点能更明显易懂，下文特举可选实施例，并配合所附附图，作详细说明如下。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用来解释本公开的原理。
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本公开一个或多个实施例公开的一种驱动背板的俯视结构示意图；
图2是图1沿A-A方向上的剖面示意图；
图3为本公开一个或多个实施例公开的另一种驱动背板的剖面示意图；
图4为本公开一个或多个实施例公开的还一种驱动背板的剖面示意图；
图5为本公开一个或多个实施例公开的发光装置的俯视结构示意图；
图6是图5沿B-B方向上的剖面示意图；
图7为本公开一个或多个实施例公开的电子设备的立体结构示意图。
主要附图标记说明
驱动背板1；基板10；驱动电路结构11；绝缘层110；第一表面110a；电路本体111；电路电极112；第一端1121；第二端1122；第一电极112a；第二电极112b；预留槽12；槽底120；子槽121； 挡墙13；顶面130；共晶金属层14；共晶金属块140；发光装置2；微型发光二极管20；共晶金属21；电子设备3。
具体实施方式
为了能够更清楚地理解本公开的上述目的、特征和优点，下面将对本公开的方案进行进一步描述。需要说明的是，在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本公开，但本公开还可以采用其他不同于在此描述的方式来实施；显然，说明书中的实施例只是本公开的一部分实施例，而不是全部的实施例。
本公开的说明书和权利要求书中的术语“第一”和“第二”等是用来区别不同的对象，而不是用来描述对象的特定顺序。例如，第一摄像头和第二摄像头是为了区别不同的摄像头，而不是为了描述摄像头的特定顺序。
在本公开实施例中，“示例性的”或者“例如”等词来表示作例子、例证或说明。本公开实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言，使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念，此外，在本公开实施例的描述中，除非另有说明，“多个”的含义是指两个或两个以上。
请一并参阅图1与图2，图1为本公开一个或多个实施例公开的一种驱动背板的俯视结构示意图，图2是图1沿A-A方向上的剖面示意图。本公开实施例第一方面公开了一种驱动背板1，用于承载微型发光二极管，并用于驱动微型发光二极管发光，从而形成为发光装置，以作为光源，应用于包括但不限于显示屏、投影仪、VR(虚拟现实，Virtual Reality)眼镜、AR(增强现实，Augmented Reality)眼镜、灯具等能够实现发光显示功能或发光功能的电子设备。
具体地，该驱动背板1包括基板10以及驱动电路结构11。该驱动电路结构11设置在基板10的一侧，该驱动电路结构11包括绝缘层110、设置于绝缘层110内的电路本体111以及多个电路电极112，该电路本 体111形成为驱动背板1包括的驱动电路，绝缘层110具有第一表面110a，多个电路电极112间隔阵列设于绝缘层110，电路电极112的第一端1121电连接于对应的电路本体111，电路电极112的第二端1122延伸至位于第一表面110a上，第二端1122用于键合连接于微型发光二极管，第一表面110a还设有预留槽12，预留槽12位于相邻的两个电路电极112之间，其中，为了便于观察，图1与图2中仅示出了驱动电路结构11包括的两个电路电极112，驱动电路结构11包括的电路电极112的具体数量，可根据实际需求进行选择，本申请的附图不对驱动电路结构11包括的电路电极112的具体数量造成限定。
通过在绝缘层110的第一表面110a对应于电路电极112的外周设置预留槽12，能够通过预留槽12来容纳自对应的电路电极112溢流的共晶金属，以增长共晶金属的溢流路程，从而降低相邻的两个电路电极112上的共晶金属溢流至相接触的风险。
作为本公开实施例一种可选的实施方式，预留槽12可与电路本体111相间隔，换言之，可使预留槽12位于电路本体111的外部，从而能够避免溢流至预留槽12内的共晶金属接触电路本体111，而影响电路本体111的电路功能。
作为本公开实施例一种可选的实施方式，绝缘层110可包括但不限于SiOx(x氧化硅)，SiNy(y氮化硅)，AlOx(x氧化铝)，SiOxNy(y氮x氧化硅)等材料，其中，x表示的是该材料的分子中，氧原子的个数，y表示的是该材料的分子中，氮原子的个数，从而绝缘层110能够具有绝缘的性质的同时，适用于黄光工艺或半导体工艺，从而便于在绝缘层110中设置电路本体111以及电路电极112。
作为本公开实施例一种可选的实施方式，电路电极112可包括但不限于ITO(Indium Tin Oxide，掺锡氧化铟)，IZO(铟锌氧化物)，Cu(铜)，Ti(钛)，Al(铝)，Mo(钼)，MoTi(钼化钛)等材料，或包括ITO(Indium Tin Oxide，掺锡氧化铟)，IZO(铟锌氧化物)，Cu(铜)，Ti(钛)，Al(铝)，Mo(钼)，MoTi(钼化钛)等材料的合金。
相关技术中，为了使微型发光二极管的内部能够形成电回路，微型发光二极管通常包括两个电极，因此，一个微型发光二极管可对应连接于两个电路电极112，换言之，可使相邻的两个电路电极112对应连接于同一个微型发光二极管。
在一个实施例中，多个电路电极112中，可包括多个第一电极112a以及多个第二电极112b，多个第一电极112a分别与多个第二电极112b间隔相对设置，一对第一电极112a与第二电极112b可分别对应连接于同一个微型发光二极管，换言之，第一电极112a以及与该第一电极112a配对的第二电极112b配置成对应连接于一个微型发光二极管。
由于微型发光二极管的尺寸较小，因此，对应于同一个微型发光二极管的一对第一电极112a与第二电极112b之间的距离也较小，因此分别设于一对第一电极112a与第二电极112b上的共晶金属更容易在热压过程中溢流至相接触，从而易于产生短路的问题。基于此，作为本公开实施例一种可选的实施方式，至少一对第一电极112a与第二电极112b之间的间隔处，对应设有预留槽12，从而有效降低相对应的第一电极112a与第二电极112b之间的短路风险。
为了更加缩短相邻的两个微型发光二极管之间的距离，以提升微型发光二极管在驱动背板1上的设置密度，同时无需进一步地缩小相邻的电路电极112之间的距离，以降低分别设于两个相邻的电路电极112上的共晶金属，在热压过程中溢流至相接触而产生短路的风险，作为本公开实施例一种可选的实施方式，可使同一对第一电极112a与第二电极112b用于对应连接多个微型发光二极管，换言之，第一电极112a以及与第一电极112a配对的第二电极112b配置成对应连接多个微型发光二极管。
请结合图5所示，具体地，可使第一电极112a与第二电极112b均为长条状，从而使第一电极112a与第二电极112b沿自身的长度方向S上的长度更长，以为多个微型发光二极管提供更大的可连接区域。
进一步地，第一电极112a与第二电极112b大致可相平行设置，即， 沿垂直于第一电极112a的长度方向S的方向上，第一电极112a以及与第一电极112a配对的第二电极112b可间隔相对设置，多个微型发光二极管20沿第一电极112a以及第二电极112b的长度方向S上间隔排列，且多个微型发光二极管20的一个电极(图中未示出)均电连接于第一电极112a，多个微型发光二极管20的另一个电极(图中未示出)均电连接于第二电极112b，从而沿第一电极112a以及第二电极112b的长度方向S上，多个微型发光二极管20之间的间隔距离可以较近的同时，无需进一步地缩小多个电路电极112在沿第一电极112a以及第二电极112b的长度方向S上的间距，如图1所示，图1中的箭头示出了长度方向S。
可以理解的，沿自第一表面110a向基板10的方向上，预留槽12越深，预留槽12越能够增长共晶金属的溢流路程。基于此，作为本公开实施例一种可选的实施方式，沿自第一表面110a向基板10的方向上，预留槽12可贯通于绝缘层110，以使预留槽12能够更加地增长共晶金属的溢流路程。
为了进一步地增长共晶金属在相邻的两个电路电极112(例如一对第一电极112a与第二电极112b)之间的溢流路程，如图3所示，作为本公开实施例一种可选的实施方式，预留槽12的槽底120可凸设有至少一个挡墙13，挡墙13将预留槽12分隔为多个子槽121，多个子槽121沿自对应的第一电极112a向对应的第二电极112b的方向间隔排列，从而进一步地增长共晶金属的溢流路程，以进一步降低相邻电路电极112之间通过溢流的共晶金属短接的风险。
作为本公开实施例一种可选的实施方式，挡墙13可通过在槽底120设置例如PSPI(photosensitive polyimide photoresist，光敏聚酰亚胺)、PFA(Perfluoroalkoxy，可熔性聚四氟乙烯)等有机材料并固化形成，从而挡墙13具有绝缘性，能够避免共晶金属通过挡墙13相电连接而导致相邻的电路电极112相短接，且挡墙13的制备、设置工艺成熟，工艺难度低。
作为本公开实施例一种可选的实施方式，挡墙13可具有远离槽底 120的顶面130，凸出于第一表面110a，从而挡墙13能够实现更大的增长共晶金属的溢流路程的效果。
沿自绝缘层110向基板10的方向上，顶面130与第一表面110a之间具有高度差h，为了更大地增长共晶金属的溢流路程，该高度差h可越大，但是，为了避免微型发光二极管设置于第一电极112a以及第二电极112b时，挡墙13的顶面130碰撞于微型发光二极管，该高度差h不可过大。基于此，作为本公开实施例一种可选的实施方式，该高度差h可满足：0.5um≤h≤5um，例如，高度差h可为0.5um、1um、1.5um、2um、2.5um、3um、3.5um、4um、4.5um或5um等。
可以理解的是，在其他实施例中，该顶面130还可低于或齐平于第一表面110a。
如图4所示，作为本公开实施例另一种可选的实施方式，至少一对第一电极112a与第二电极112b之间的间隔处，对应可设有多个预留槽12，多个预留槽12沿自对应的第一电极112a向对应的第二电极112b的方向间隔排列，从而通过间隔设置多个预留槽12，来使两个相邻的预留槽12之间的绝缘层110形成为挡墙13，以能够进一步地增长共晶金属的溢流路程的同时，无需额外进行设置挡墙13的步骤，以简化驱动背板1的制备工艺，从而降低驱动背板1的制备成本。
请再次一并参阅图1与图2，为了简化后续的微型发光二极管的转移工艺，一些实施方式中，各电路电极112上可均设置有共晶金属层14，该共晶金属层14可包括但不限于Sn(锡)，Bi(铋)，In(铟)，Sb(锑)，Ga(镓)等材质的低熔点合金，共晶金属层14用于分别键合连接于电路电极112以及微型发光二极管。
由前文所述，同一对第一电极112a与第二电极112b可用于对应连接多个微型发光二极管，该多个微型发光二极管沿第一电极112a以及第二电极112b的长度方向S上间隔排列，此时，作为本公开实施例一种可选的实施方式，各电路电极112上的共晶金属层14可包括多个共晶金属块140，且多个共晶金属块140沿各电路电极112的长度方向S 上间隔排列。
可以理解的是，在其他实施方式中，各电路电极112上还可不设置有共晶金属层14，以在后续的将微型发光二极管转移至驱动背板1的步骤之前，再根据实际的需求，例如根据待转移的微型发光二极管的尺寸、微型发光二极管的设置密度等，来在各电路电极112上，或在微型发光二极管的各电极上设置共晶金属。
本公开实施例第一方面公开的一种驱动背板1，通过在绝缘层110的第一表面110a对应于电路电极112的外周设置预留槽12，能够通过预留槽12来容纳自对应的电路电极112溢流的共晶金属，并增长共晶金属的溢流路程，从而降低相邻的两个电路电极112上的共晶金属溢流至相接触的风险。
此外，通过使预留槽12位于电路本体111的外部，能够避免溢流至预留槽12内的共晶金属接触电路本体111，而影响电路本体111的电路功能。
更加地，通过在预留槽12内设置至少一个挡墙13，或者，通过在相邻的两个电路电极112之间间隔设置多个预留槽12，以进一步地增长共晶金属的溢流路程，从而进一步地降低相邻的两个电路电极112上的共晶金属溢流至相接触的风险。
请一并参阅图5与图6，图5为本公开一个或多个实施例公开的发光装置的俯视结构示意图，图6是图5沿B-B方向上的剖面示意图。本公开实施例第二方面公开了一种发光装置2，该发光装置2可包括但不限于发光板、LED(Light-Emitting Diode，发光二极管)显示屏、LCOS(Liquid crystal on silicon，反射式液晶)显示屏以及LCD(Liquid Crystal Display，液态晶体)显示屏等，该发光装置2可应用于电子设备，该电子设备可包括但不限于手机、平板、家教机、游戏机、电子手表、手提电脑、车载显示屏、投影仪、VR(虚拟现实，Virtual Reality)眼镜、AR(增强现实，Augmented Reality)眼镜、灯具等具有发光显示功能或发光功能的设备，当将该发光装置2应用于上述电子设备时， 该发光装置2可作为上述电子设备的包括的至少一个屏幕或发光源使用。
在一个实施例中，该发光装置2包括多个微型发光二极管20以及如上述第一方面所述的驱动背板1，多个微型发光二极管20阵列排布，且微型发光二极管20通过共晶金属21键合连接于电路电极112的第二端1122。由于该驱动背板1能够降低微型发光二极管20热压键合于驱动背板1后，微型发光二极管20的两个电极(图中未标号)分别键合连接的共晶金属21溢流至相短接的风险，从而能够提升发光装置2的良品率，以降低发光装置2的制造成本。
作为本公开实施例一种可选的实施方式，部分共晶金属21可自对应的电路电极112溢流至位于预留槽12内，从而预留槽12能够有效地增长该部分共晶金属21溢流向相邻的电路电极112的路程，以有效降低微型发光二极管20的两个电极之间通过溢流的共晶金属21相短接的风险，从而有效提升发光装置2的良品率。
可以理解的，该共晶金属21可由前文中所述的共晶金属层14(请再次参见图1以及图2)通过热压键合形成，或者，可在将微型发光二极管20转移至驱动背板1的步骤之前，再根据实际的需求，例如根据待转移的微型发光二极管20的尺寸、微型发光二极管20的设置密度等，来在各电路电极112上，或在微型发光二极管20的各电极上设置。
请参见图7所示，图7为本公开一个或多个实施例公开的电子设备的立体结构示意图。本公开实施例第三方面公开了一种电子设备3，该电子设备3可包括但不限于VR(虚拟现实，Virtual Reality)眼镜、AR(增强现实，Augmented Reality)眼镜、投影仪、手机、平板、家教机、游戏机、电子手表、手提电脑、灯具车载发光装置2等具有发光显示功能或发光功能的设备。
在一个实施例中，电子设备3可包括一个或多个如上述第二方面所述的发光装置2，该发光装置2可作为电子设备3的包括的至少一个屏幕或发光源使用，由于该发光装置2的良品率高，制造成本低，因此电子设备3的良品率高，制造成本低，其中，图7中以电子设备3 为手机，发光装置2作为电子设备3包括的显示屏幕为例，示例性地示出了电子设备3的一种立体结构。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上实施例仅表达了本公开的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本公开构思的前提下，还可以做出若干变形和改进，这些都属于本公开的保护范围。因此，本公开专利的保护范围应以所附权利要求为准。
工业实用性
本公开提供的驱动背板、发光装置及电子设备，能够通过预留槽来容纳自对应的电路电极溢流的共晶金属，以增长共晶金属的溢流路程，从而降低相邻的两个电路电极上的共晶金属溢流至相接触的风险，提升发光装置的制造良率，具有很强的工业实用性。

Claims (16)

  1. 一种驱动背板，配置成承载微型发光二极管，所述驱动背板包括：
    基板；以及
    驱动电路结构，所述驱动电路结构设置在所述基板的一侧，所述驱动电路结构包括绝缘层、设置于所述绝缘层内的电路本体以及多个电路电极，所述绝缘层具有第一表面，多个所述电路电极间隔阵列设于所述绝缘层，所述电路电极的第一端电连接于对应的所述电路本体，所述电路电极的第二端延伸至位于所述第一表面上，所述第二端配置成键合连接于所述微型发光二极管，所述第一表面还设有预留槽，所述预留槽位于相邻的两个所述电路电极之间。
  2. 根据权利要求1所述的驱动背板，多个所述电路电极中，包括多个第一电极以及多个第二电极，多个所述第一电极分别与多个所述第二电极间隔相对设置，至少一对所述第一电极与所述第二电极之间的间隔处，对应设有所述预留槽。
  3. 根据权利要求2所述的驱动背板，所述预留槽的槽底凸设有至少一个挡墙，所述挡墙将所述预留槽分隔为多个子槽，多个所述子槽沿自对应的所述第一电极向对应的所述第二电极的方向间隔排列。
  4. 根据权利要求3所述的驱动背板，所述挡墙具有远离所述槽底的顶面，所述顶面凸出于所述第一表面。
  5. 根据权利要求4所述的驱动背板，沿自所述绝缘层向所述基板的方向上，所述顶面与所述第一表面之间具有高度差h，0.5um≤h≤5um。
  6. 根据权利要求3所述的驱动背板，所述挡墙由绝缘有机材料固化形成。
  7. 根据权利要求2所述的驱动背板，至少一对所述第一电极与所述第二电极之间的间隔处，对应设有多个所述预留槽，多个所述预留槽沿自对应的所述第一电极向对应的所述第二电极的方向间隔排列。
  8. 根据权利要求2-7任一项所述的驱动背板，所述第一电极以及 与所述第一电极配对的所述第二电极配置成对应连接于一个所述微型发光二极管；或者，
    所述第一电极以及与所述第一电极配对的所述第二电极配置成对应连接多个所述微型发光二极管。
  9. 根据权利要求8所述的驱动背板，所述第一电极以及与所述第一电极配对的所述第二电极配置成对应连接多个所述微型发光二极管时，所述第一电极与所述第二电极均为长条状。
  10. 根据权利要求9所述的驱动背板，沿垂直于所述第一电极的长度方向的方向上，所述第一电极以及与所述第一电极配对的所述第二电极间隔相对设置；
    沿所述第一电极的长度方向上，多个所述微型发光二极管间隔排列，且任意一个所述微型发光二极管均分别对应连接于所述第一电极以及与所述第一电极配对的所述第二电极。
  11. 根据权利要求1-7任一项所述的驱动背板，沿自所述第一表面向所述基板的方向上，所述预留槽贯通于所述绝缘层。
  12. 根据权利要求1-7任一项所述的驱动背板，所述预留槽与所述电路本体相间隔。
  13. 根据权利要求1所述的驱动背板，各所述电路电极上均设置有共晶金属层，所述共晶金属层配置成分别键合连接于所述电路电极以及所述微型发光二极管。
  14. 一种发光装置，包括多个微型发光二极管以及如权利要求1-13任一项所述的驱动背板，多个所述微型发光二极管阵列排布，且所述微型发光二极管通过共晶金属键合连接于所述电路电极的所述第二端。
  15. 根据权利要求14所述的发光装置，部分所述共晶金属自对应的所述电路电极溢流至位于所述预留槽内。
  16. 一种电子设备，包括一个或多个如权利要求14或15所述的发光装置。
PCT/CN2022/140927 2022-09-14 2022-12-22 驱动背板、发光装置及电子设备 WO2024055465A1 (zh)

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CN110416246A (zh) * 2019-07-31 2019-11-05 云谷（固安）科技有限公司 一种发光二极管芯片阵列和显示面板
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