WO2024048461A1 - 温度制御装置、基板処理装置及び温度制御方法 - Google Patents

温度制御装置、基板処理装置及び温度制御方法 Download PDF

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Publication number
WO2024048461A1
WO2024048461A1 PCT/JP2023/030779 JP2023030779W WO2024048461A1 WO 2024048461 A1 WO2024048461 A1 WO 2024048461A1 JP 2023030779 W JP2023030779 W JP 2023030779W WO 2024048461 A1 WO2024048461 A1 WO 2024048461A1
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Prior art keywords
temperature
section
temperature control
fluid
flow path
Prior art date
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Ceased
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PCT/JP2023/030779
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English (en)
French (fr)
Japanese (ja)
Inventor
優 砂金
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2024544206A priority Critical patent/JPWO2024048461A1/ja
Priority to KR1020257008802A priority patent/KR20250053888A/ko
Priority to CN202380060828.3A priority patent/CN119731610A/zh
Publication of WO2024048461A1 publication Critical patent/WO2024048461A1/ja
Priority to US19/051,263 priority patent/US20250181087A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/185—Control of temperature with auxiliary non-electric power
    • G05D23/1858—Control of temperature with auxiliary non-electric power by varying the mixing ratio of fluids having different temperatures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1935—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces using sequential control
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/30—Automatic controllers with an auxiliary heating device affecting the sensing element, e.g. for anticipating change of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Definitions

  • the present disclosure relates to a temperature control device, a substrate processing device, and a temperature control method.
  • a temperature control section that circulates fluid, a heating channel that heats the fluid and circulates it to the temperature control section, a cooling channel that cools the fluid and circulates it to the temperature control section, and a heating channel and a cooling channel.
  • a bypass flow path that circulates the fluid to the temperature control section without passing through the fluid, and a confluence section where the heating flow path, cooling flow path, and bypass flow path join together, and the fluid is output to the temperature control section.
  • a temperature control device comprising: adjusting means for adjusting a flow rate ratio.
  • the present disclosure provides a temperature control device, a substrate processing device, and a temperature control method that improve the accuracy of temperature control.
  • a temperature control device that controls the temperature of the temperature control section by circulating a fluid through the temperature control section, the temperature control device controlling the temperature of the temperature control section by adjusting the fluid to a first temperature.
  • a first temperature adjustment section a second temperature adjustment section that adjusts the fluid adjusted to the first temperature to a second temperature; and a second temperature adjustment section provided between the first temperature adjustment section and the second temperature adjustment section.
  • a first temperature regulation channel a second temperature regulation channel provided between the second temperature regulation section and the temperature regulation section, and a second temperature regulation channel provided between the temperature regulation section and the first temperature regulation section.
  • a temperature control device is provided, comprising a return flow path.
  • thermocontrol device it is possible to provide a temperature control device, a substrate processing device, and a temperature control method that improve the accuracy of temperature control.
  • An example of a configuration diagram of a plasma processing system An example of a configuration diagram of a plasma processing apparatus.
  • An example of an overall configuration diagram of the temperature control module according to the first embodiment An example of an overall configuration diagram of a temperature control module according to a reference example.
  • Graph showing an example of temperature change of heat transfer fluid An example of an overall configuration diagram of a temperature control module according to a second embodiment.
  • FIG. 1 is an example of a configuration diagram of a plasma processing system.
  • FIG. 2 is an example of a configuration diagram of the plasma processing apparatus 1. As shown in FIG.
  • a plasma processing system includes a plasma processing apparatus 1 and a control section 2.
  • the plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support section 11, and a plasma generation section 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also includes at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for discharging gas from the plasma processing space.
  • the gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later.
  • the substrate support section 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.
  • the plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasmas formed in the plasma processing space include capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and ECR plasma (Electron-Cyclotron-resonance).
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • ECR plasma Electro-Cyclotron-resonance
  • plasma helicon wave excited plasma
  • SWP surface wave plasma
  • various types of plasma generation units may be used, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit.
  • the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal.
  • the RF signal has a frequency within the range of 200kHz to 150MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include, for example, a computer 2a.
  • the computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the processing unit two a1 may be configured to perform various control operations based on programs stored in the storage unit two a2.
  • the storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. Good.
  • the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 .
  • the gas introduction section includes a shower head 13. Substrate support 11 is arranged within plasma processing chamber 10 . The shower head 13 is arranged above the substrate support section 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 .
  • the plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11.
  • the side wall 10a is grounded.
  • the shower head 13 and the substrate support section 11 are electrically insulated from the plasma processing chamber 10 casing.
  • the substrate support section 11 includes a main body section 111 and a ring assembly 112.
  • the main body portion 111 has a central region (substrate support surface) 111a for supporting the substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view.
  • the substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111.
  • body portion 111 includes a base and an electrostatic chuck.
  • the base includes a conductive member.
  • the conductive member of the base functions as a lower electrode.
  • An electrostatic chuck is placed on the base.
  • the top surface of the electrostatic chuck has a substrate support surface 111a.
  • Ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring.
  • the substrate support section 11 includes a temperature control module 100 configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature (see FIG. 3 described later). ) may also be included.
  • the temperature control module 100 may include a heater, a heat transfer fluid, a flow path 16 (see FIG. 3 below), or a combination thereof.
  • a heat transfer fluid such as brine or gas flows through the flow path 16 .
  • the substrate support section 11 may include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c.
  • the shower head 13 includes a conductive member.
  • the conductive member of the shower head 13 functions as an upper electrode.
  • the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.
  • SGI side gas injectors
  • the gas supply section 20 may include at least one gas source 21 and at least one flow rate controller 22.
  • the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 .
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • gas supply 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one process gas.
  • Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and/or the conductive member of the showerhead 13. be done.
  • RF power RF signal
  • the RF power supply 31 can function as at least a part of the plasma generation section 12.
  • a bias RF signal to the conductive member of the substrate support section 11
  • a bias potential is generated on the substrate W, and ion components in the formed plasma can be drawn into the substrate W.
  • the RF power supply 31 includes a first RF generation section 31a and a second RF generation section 31b.
  • the first RF generation section 31a is coupled to a conductive member of the substrate support section 11 and/or a conductive member of the shower head 13 via at least one impedance matching circuit, and is connected to a source RF signal (source RF signal) for plasma generation. configured to generate electricity).
  • the source RF signal has a frequency within the range of 13 MHz to 150 MHz.
  • the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to the conductive member of the substrate support 11 and/or the conductive member of the showerhead 13 .
  • the second RF generator 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power).
  • the bias RF signal has a lower frequency than the source RF signal.
  • the bias RF signal has a frequency within the range of 400kHz to 13.56MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to the conductive member of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 .
  • the DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b.
  • the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal.
  • the generated first DC signal is applied to the conductive member of the substrate support 11.
  • the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck.
  • the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal.
  • the generated second DC signal is applied to the conductive member of the showerhead 13.
  • the first and second DC signals may be pulsed. Note that the first and second DC generation sections 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation section 32a may be provided in place of the second RF generation section 31b. good.
  • the exhaust system 40 may be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
  • Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • FIG. 3 is an example of an overall configuration diagram of the temperature control module 100 according to the first embodiment.
  • the temperature control module 100 includes a temperature control section 15 having a flow path 16, a chiller 50, and a temperature control module 60.
  • the temperature control module 100 controls the temperature of the temperature control section 15 by passing a heat transfer fluid (for example, brine, etc.) through a flow path 16 formed in the temperature control section 15. In other words, the temperature control module 100 controls the temperature of the temperature control section 15 by circulating the heat transfer fluid between the flow path 16 formed in the temperature control section 15 and the chiller 50 .
  • the flow path 16 has an inlet 17 and an outlet 18.
  • the temperature control section 15 may be, for example, the substrate support section 11.
  • the temperature control module 100 controls the temperature of the substrate support part 11 (temperature control part 15) so that at least one of the electrostatic chuck, the ring assembly 112, and the substrate W arranged near the substrate support part 11 One temperature is controlled to a desired temperature (target temperature).
  • the temperature control section 15 is not limited to the substrate support section 11, and may be, for example, an upper electrode or the side wall 10a of the plasma processing chamber 10.
  • the temperature control unit 15 receives heat from, for example, plasma generated in the plasma processing chamber 10 (see the white arrow in FIG. 3).
  • the temperature control section 15 is supplied with heat transfer fluid from the inlet 17 of the flow path 16, and the temperature control section 15 is cooled by exchanging heat between the heat transfer fluid flowing through the flow path 16 and the temperature control section 15. , the heat transfer fluid is heated.
  • One end of a return flow path 80 is connected to the outlet 18 of the flow path 16 .
  • the other end of the return flow path 80 is connected to the chiller 50 (first temperature adjustment section 51 described later).
  • the heat transfer fluid discharged from the outlet 18 of the flow path 16 flows into the chiller 50 via the return flow path 80 .
  • the chiller 50 includes a first temperature adjustment section 51, a tank 52, and a pump 53.
  • the other end of the return flow path 80 is connected to one end (upstream side) of the first temperature adjustment section 51.
  • the other end (downstream side) of the first temperature adjustment section 51 is connected to one end (inflow side) of the tank 52 via the flow path 71.
  • the other end (outflow side) of the tank 52 is connected to one end (suction side) of the pump 53 via a flow path 72 .
  • One end of a flow path 73 is connected to the other end (discharge side) of the pump 53.
  • the first temperature adjustment unit 51 is, for example, a cooling device (refrigerator) that cools the heat transfer fluid, and adjusts the temperature of the heat transfer fluid to a first temperature.
  • the tank 52 stores the heat transfer fluid that has been cooled to a first temperature by the first temperature adjustment section 51 .
  • the pump 53 circulates the heat transfer fluid between the flow path 16 of the temperature control section 15 and the chiller 50. The pump 53 discharges the heat transfer fluid cooled to the first temperature stored in the tank 52 to the temperature adjustment module 60 via the flow path 73 .
  • the tank 52 is illustrated as being provided downstream of the first temperature adjustment section 51 and upstream of the pump 53, but the tank 52 is not limited to this.
  • the tank 52 may be provided upstream of the first temperature adjustment section 51 and the pump 53. That is, the other end of the return flow path 80 is connected to one end (inflow side) of the tank 52, and the other end (outflow side) of the tank 52 is connected to one end (upstream side) of the first temperature adjustment section 51 via the flow path.
  • the other end (downstream side) of the first temperature adjustment section 51 may be connected to one end (suction side) of the pump 53 via a flow path.
  • the tank 52 is preferably provided downstream of the first temperature adjustment section 51.
  • the fluctuations in temperature are absorbed by the heat transfer fluid stored in the tank 52. , it is possible to reduce fluctuations in the temperature of the heat transfer fluid discharged from the chiller 50.
  • the temperature adjustment module 60 includes a second temperature adjustment section 61 and a flow rate adjustment section 62.
  • the other end of the flow path 73 is connected to the inflow port of the branch portion 74 .
  • Branch 74 has one inflow port and two outflow ports.
  • One outflow port of the branch section 74 is connected to one end (upstream side) of the second temperature adjustment section 61 via a flow path 75.
  • the other end (downstream side) of the second temperature adjustment section 61 is connected to one inflow port of the merging section 78 via a flow path 76 .
  • the second temperature adjustment unit 61 heats or cools the heat transfer fluid discharged from the chiller 50 (heat transfer fluid adjusted to the first temperature), and adjusts the temperature of the heat transfer fluid to the second temperature.
  • the flow path 76 then supplies the heat transfer fluid adjusted to the second temperature to the flow path 16 of the temperature control section 15 via the merging section 78 and the outgoing flow path 79.
  • the second temperature adjustment section 61 may be a heating device that heats the heat transfer fluid (first temperature ⁇ second temperature), or a cooling device that cools the heat transfer fluid (first temperature > second temperature). It may be. Further, as the second temperature adjustment section 61, a device having smaller capacity (cooling capacity, heating capacity) than the first temperature adjustment section 51 can be used.
  • the second temperature adjustment section 61 can use a device smaller than the first temperature adjustment section 51.
  • the channels 71, 72, 73, and 75 provided between the first temperature regulating section 51 and the second temperature regulating section 61 are also referred to as first temperature regulating channels.
  • a heat transfer fluid at a first temperature flows through the first temperature control channel.
  • the flow path 76 provided between the second temperature adjustment section 61 and the temperature adjustment section 15 is also referred to as a second temperature adjustment flow path.
  • a heat transfer fluid at a second temperature flows through the second temperature control channel.
  • the other outflow port of the branching section 74 is connected to the other inflow port of the merging section 78 via the bypass channel 77. That is, the bypass flow path 77 branches from the first temperature control flow path at the branching portion 74 and merges with the second temperature control flow path at the confluence portion 78 .
  • the bypass flow path 77 merges the heat transfer fluid (heat transfer fluid adjusted to the first temperature) discharged from the chiller 50 without passing through the flow path 75, the second temperature adjustment section 61, and the flow path 76. It is supplied to the flow path 16 of the temperature control section 15 via the section 78 and the outgoing flow path 79. A heat transfer fluid at a first temperature flows through the bypass channel 77 .
  • the temperature adjustment module 60 forms a temperature difference between the heat transfer fluid flowing through the flow path 76 adjusted to the second temperature and the heat transfer fluid flowing through the bypass flow path 77 adjusted to the first temperature. do.
  • the merging section 78 has two inflow ports and one outflow port.
  • the inflow port of the merging section 78 is connected to the flow path 76 and the bypass flow path 77, which merge together, and the outflow port of the merging section 78 is connected to the outflow path 79.
  • the merging portion 78 is provided with a flow ratio adjustment portion 62 .
  • the flow ratio adjustment section 62 includes a flow control valve 621 provided in the flow path 76 and a flow control valve 622 provided in the bypass flow path 77.
  • the opening degree (opening area) of the flow rate control valves 621 and 622 is controlled by the control unit 2. Thereby, the flow rate ratio (mixing ratio) of the heat transfer medium at the second temperature from the flow path 76 and the heat transfer fluid at the first temperature from the bypass flow path 77 can be adjusted. Thereby, the temperature of the heat transfer fluid circulated to the flow path 16 of the temperature control section 15 can be controlled.
  • the flow ratio adjustment section 62 may have a configuration including a valve (for example, a flow control valve, an on-off valve, etc.) provided in at least one of the flow path 76 and the bypass flow path 77. Further, the flow ratio adjustment section 62 may have a configuration including a valve (for example, a mixing valve, etc.) provided at the confluence section 78 of the flow path 76 and the bypass flow path 77.
  • a valve for example, a flow control valve, an on-off valve, etc.
  • the outgoing flow path 79 circulates the heat transfer fluid from the outflow port of the confluence section 78 to the inlet 17 of the flow path 16 of the temperature control section 15.
  • the return flow path 80 is provided between the temperature control section 15 and the chiller 50 and circulates the heat transfer fluid from the outlet 18 of the flow path 16 of the temperature control section 15 to the chiller 50.
  • the flow path 73 is provided with a temperature sensor 81 that detects the temperature of the heat transfer fluid.
  • a temperature sensor 82 is provided in the flow path 76 to detect the temperature of the heat transfer fluid.
  • a temperature sensor 83 is provided in the bypass passage 77 to detect the temperature of the heat transfer fluid. Note that either one of the temperature sensor 81 and the temperature sensor 83 may be used.
  • a temperature sensor 84 that detects the temperature of the heat transfer fluid is provided downstream of the confluence section 78 (outward flow path 79).
  • a temperature sensor 85 is provided in the return flow path 80 to detect the temperature of the heat transfer fluid. The temperatures detected by the temperature sensors 81 to 85 are input to the control section 2.
  • the control unit 2 controls the chiller 50.
  • the control unit 2 controls the output of the first temperature adjustment unit (refrigerator) 51 based on the temperature of the heat transfer fluid detected by the temperature sensor 85.
  • control unit 2 controls the temperature adjustment module 60 so that the temperature of the heat transfer fluid supplied to the temperature adjustment unit 15 becomes a desired temperature.
  • control unit 2 controls the flow ratio adjustment unit 62 so that the temperature of the heat transfer fluid after merging, which is detected by the temperature sensor 84, becomes a predetermined temperature.
  • the control unit 2 also controls the temperature of the heat transfer fluid before merging (first temperature) detected by the temperature sensor 83 (or temperature sensor 81) and the temperature of the heat transfer fluid before merging detected by the temperature sensor 82 (second temperature).
  • the flow ratio adjustment section 62 may be controlled based on the temperature.
  • control unit 2 controls the flow rate control valves 621 and 622 to control the flow rates of the heat transfer medium at the second temperature from the flow path 76 and the heat transfer fluid at the first temperature from the bypass flow path 77.
  • the ratio mixing ratio
  • the control section 2 controls the output of the second temperature adjustment section 61.
  • FIG. 4 is an example of an overall configuration diagram of a temperature control module 100X according to a reference example.
  • the temperature control module 100X according to the reference example includes a temperature control section 15 having a flow path 16 and a chiller 50. That is, in the temperature control module 100X according to the reference example, the flow path 73 is connected to the outgoing flow path 79, and the heat transfer fluid is circulated between the flow path 16 formed in the temperature control section 15 and the chiller 50. The temperature of the temperature control section 15 is thereby controlled.
  • the other configurations are the same, and the explanation will be omitted.
  • FIG. 5 is a graph showing an example of the temperature change of the heat transfer fluid.
  • the temperature change of the heat transfer fluid in the temperature control module 100X according to the reference example is illustrated by a broken line.
  • the temperature change of the heat transfer fluid in the temperature control module 100 according to the present embodiment is illustrated by a broken line.
  • the control unit 2 controls the temperature of the heat transfer fluid supplied to the temperature control unit 15 by controlling the first temperature control unit 51 to increase the cooling capacity. do. For this reason, in the temperature transient state shown in FIG. 5, for example, the control of the first temperature adjustment section 51 may not be able to keep up, and temperature fluctuations (overshoot, undershoot) may occur. In the example shown in FIG. 5, undershoot occurs in the temperature control (see broken line) of the temperature control module 100X according to the reference example.
  • the control section 2 controls the temperature of the heat transfer fluid by controlling the first temperature control section 51 to increase the cooling capacity. Further, the control unit 2 controls the temperature of the heat transfer fluid supplied to the temperature control unit 15 by controlling the output of the second temperature adjustment unit 61 and the flow ratio adjustment unit 62 (flow rate control valves 621, 622). do. Therefore, even if the control of the first temperature adjustment section 51 cannot keep up with the temperature transient state shown in FIG. Since the temperature can be adjusted, fluctuations in temperature can be suppressed.
  • the temperature control module 60 can set the temperature of the heat transfer fluid supplied to the temperature control section 15 to a desired temperature. Therefore, the accuracy of temperature control of the heat transfer fluid supplied to the temperature control section 15 can be improved.
  • the temperature control of the heat transfer fluid by the temperature adjustment module 60 can have faster response. Thereby, temperature fluctuations (overshoot, undershoot) can be quickly suppressed.
  • the second temperature adjustment section 61 can use a device that is smaller and has lower output than the first temperature adjustment section 51. Thereby, it is possible to suppress the temperature control module 100 from increasing in size.
  • the temperature difference formed by the second temperature adjustment section 61 (the temperature difference between the temperature of the temperature sensor 83 and the temperature of the temperature sensor 82) is different from the temperature difference formed by the first temperature adjustment section 51 (the temperature of the temperature sensor 85).
  • the temperature difference between the temperature sensor 81 and the temperature sensor 81 may be smaller than that of the temperature sensor 81.
  • the flow rate of the heat transfer fluid flowing through the second temperature adjustment section 61 may be smaller than the flow rate of the heat transfer fluid flowing through the first temperature adjustment section 51.
  • the product of the temperature difference and the flow rate in the second temperature adjustment section 61 may be smaller than the product of the temperature difference and the flow rate in the first temperature adjustment section 51.
  • the first temperature adjustment section 51 is a cooling device and the second temperature adjustment section 61 is a heating device.
  • the first temperature adjustment section 51 may be a cooling device
  • the second temperature adjustment section 61 may be a cooling device. Thereby, for example, overshoot of the temperature of the heat transfer fluid can be suppressed.
  • the second temperature adjustment section 61 may be configured to selectively heat and cool the heat transfer fluid.
  • FIG. 3 illustrates an example in which the temperature control section 15 is cooled by circulating the heat transfer fluid
  • the present invention is not limited to this.
  • the configuration may be such that the temperature control section 15 is heated by circulating a heat transfer fluid.
  • the first temperature adjustment section 51 may be a heating device.
  • the second temperature adjustment section 61 may be a cooling device or a heating device. Thereby, temperature fluctuations in the heat transfer fluid supplied to the temperature control section 15 can be suppressed.
  • the temperature adjustment module 60 has been described as including the flow path 76 having the second temperature adjustment section 61, the bypass flow path 77, and the flow ratio adjustment section 62, the present invention is not limited to this.
  • FIG. 6 is an example of an overall configuration diagram of the temperature control module 100 according to the second embodiment.
  • the temperature control module 100 includes a temperature control section 15 having a flow path 16, a chiller 50, and a temperature control module 60A.
  • the chiller 50 includes a first temperature adjustment section 51, a tank 52, and a pump 53, similarly to the chiller 50 of the temperature control module 100 according to the first embodiment (see FIG. 3).
  • the temperature adjustment module 60A includes a second temperature adjustment section 61A, a third temperature adjustment section 61B, and a flow ratio adjustment section 62.
  • the other end of the flow path 73 is connected to the inflow port of the branch portion 74 .
  • Branch 74 has one inflow port and three outflow ports.
  • the first outflow port of the branch section 74 is connected to one end (upstream side) of the second temperature adjustment section 61A via the flow path 75A.
  • the other end (downstream side) of the second temperature adjustment section 61A is connected to the first inflow port of the merging section 78 via the flow path 76A.
  • the second outflow port of the branch section 74 is connected to one end (upstream side) of the third temperature adjustment section 61B via a flow path 75B.
  • the other end (downstream side) of the third temperature adjustment section 61B is connected to the second inflow port of the merging section 78 via a flow path 76B.
  • the second temperature adjustment unit 61A heats the heat transfer fluid (heat transfer fluid adjusted to a first temperature) discharged from the chiller 50, and adjusts the temperature of the heat transfer fluid to a second temperature (first temperature ⁇ second temperature). control (adjust) the temperature).
  • the flow path 76A then supplies the heat transfer fluid adjusted to the second temperature to the flow path 16 of the temperature control section 15 via the merging section 78 and the outgoing flow path 79.
  • the third temperature adjustment unit 61B cools the heat transfer fluid (heat transfer fluid adjusted to the first temperature) discharged from the chiller 50, and adjusts the temperature of the heat transfer fluid to a third temperature (first temperature>third temperature). control (adjust) the temperature).
  • the flow path 76B then supplies the heat transfer fluid adjusted to the third temperature to the flow path 16 of the temperature control section 15 via the confluence section 78 and the outgoing flow path 79.
  • the second temperature regulation unit 61A and the third temperature regulation unit 61B can be used as the second temperature regulation unit 61A and the third temperature regulation unit 61B.
  • the second temperature adjustment section 61A and the third temperature adjustment section 61B can be smaller devices than the first temperature adjustment section 51.
  • the flow paths 71, 72, 73, 75A, and 75B provided between the first temperature adjustment section 51, the second temperature adjustment section 61A, and the third temperature adjustment section 61B are also referred to as first temperature adjustment flow paths.
  • a heat transfer fluid at a first temperature flows through the first temperature control channel.
  • the flow path 76A provided between the second temperature adjustment section 61A and the temperature adjustment section 15 is also referred to as a second temperature adjustment flow path.
  • a heat transfer fluid at a second temperature flows through the second temperature control channel.
  • the flow path 76B provided between the third temperature adjustment section 61B and the temperature adjustment section 15 is also referred to as a third temperature adjustment flow path.
  • a heat transfer fluid at a third temperature flows through the third temperature control channel.
  • the third outflow port of the branching section 74 is connected to the third inflow port of the merging section 78 via the bypass channel 77. That is, the bypass flow path 77 branches from the first temperature control flow path at the branching portion 74 and merges with the second temperature control flow path and the third temperature control flow path at the merging portion 78 .
  • the bypass flow path 77 allows air to flow from the chiller 50 without passing through the flow path 75A, the second temperature adjustment section 61A, and the flow path 76A, and without passing through the flow path 75B, the third temperature adjustment section 61B, and the flow path 76B.
  • the discharged heat transfer fluid (heat transfer fluid adjusted to the first temperature) is supplied to the flow path 16 of the temperature control section 15 via the confluence section 78 and the outgoing flow path 79.
  • a heat transfer fluid at a first temperature flows through the bypass channel 77 .
  • the temperature adjustment module 60A allows the heat transfer fluid adjusted to the second temperature flowing through the flow path 76A, the heat transfer fluid adjusted to the third temperature flowing through the flow path 76B, and the first heat transfer fluid flowing through the bypass flow path 77 to be adjusted to the second temperature.
  • a temperature difference is formed between the heat transfer fluid and the temperature adjusted.
  • the merging section 78 has three inflow ports and one outflow port.
  • the inflow port of the confluence section 78 is connected to the flow path 76A, the flow path 76B, and the bypass flow path 77, and these converge, and the outflow port of the confluence section 78 is connected to the outflow path 79.
  • the merging section 78 is provided with a flow ratio adjusting section 62 .
  • the flow ratio adjustment section 62 includes a flow control valve 621A provided in the flow path 76A, a flow control valve 621B provided in the flow path 76B, and a flow control valve 622 provided in the bypass flow path 77.
  • the opening degree (opening area) of the flow rate control valves 621A, 621B, and 622 is controlled by the control unit 2. Thereby, the flow rate ratio of the heat transfer medium at the second temperature from the flow path 76A, the heat transfer medium at the first temperature from the flow path 76B, and the heat transfer fluid at the first temperature from the bypass flow path 77 is determined. (mixing ratio) can be adjusted. Thereby, the temperature of the heat transfer fluid circulated to the flow path 16 of the temperature control section 15 can be controlled.
  • the flow ratio adjustment section 62 may have a configuration including a valve (for example, a flow control valve, an on-off valve, etc.) provided in at least one of the flow paths 76A, 76B and the bypass flow path 77. Further, the flow rate ratio adjustment section 62 may have a configuration including a valve (for example, a mixing valve, etc.) provided at the confluence section 78 of the flow paths 76A, 76B and the bypass flow path 77.
  • a valve for example, a flow control valve, an on-off valve, etc.
  • the flow path 76A is provided with a temperature sensor 82A that detects the temperature of the heat transfer fluid.
  • a temperature sensor 82B that detects the temperature of the heat transfer fluid is provided in the flow path 76B.
  • a temperature sensor 83 is provided in the bypass passage 77 to detect the temperature of the heat transfer fluid.
  • a temperature sensor 84 that detects the temperature of the heat transfer fluid is provided downstream of the confluence section 78 (outward flow path 79).
  • the temperature control module 100 According to the temperature control module 100 according to the second embodiment, fluctuations (overshoot, undershoot) in the temperature of the heat transfer fluid supplied to the temperature control section 15 can be suppressed. For example, when the temperature of the heat transfer fluid flowing through the bypass flow path 77 becomes lower than a predetermined temperature (undershoot occurs), the heat transfer fluid flowing through the bypass flow path 77 and the heat transfer fluid flowing through the flow path 76A are mixed. By doing so, the temperature of the heat transfer fluid supplied to the temperature control section 15 can be brought close to a predetermined temperature.
  • the heat transfer fluid flowing through the bypass flow path 77 becomes higher than a predetermined temperature (overshoot occurs)
  • the heat transfer fluid flowing through the bypass flow path 77 and the heat transfer fluid flowing through the third temperature adjustment flow path 73B By mixing the heat transfer fluid with the heat transfer fluid, the temperature of the heat transfer fluid supplied to the temperature control section 15 can be brought close to a predetermined temperature. Therefore, the accuracy of temperature control of the heat transfer fluid supplied to the temperature control section 15 can be improved.
  • FIG. 7 is an example of an overall configuration diagram of the temperature control module 100 according to the third embodiment.
  • the temperature control module 100 includes a flow path 16 of the temperature control section 15, a chiller 50, and a temperature control module 60B.
  • the chiller 50 includes a first temperature adjustment section 51, a tank 52, and a pump 53, similarly to the chiller 50 of the temperature control module 100 according to the first embodiment (see FIG. 3).
  • the temperature adjustment module 60B has a second temperature adjustment section 61.
  • the other end of the flow path 73 is connected to one end (upstream side) of the second temperature adjustment section 61 via a flow path 75C.
  • the other end (downstream side) of the second temperature adjustment section 61 is connected to the outgoing flow path 79 via the flow path 76C.
  • the flow paths 71, 72, 73, and 75C provided between the first temperature adjustment section 51 and the second temperature adjustment section 61 are also referred to as first temperature adjustment flow paths.
  • a heat transfer fluid at a first temperature flows through the first temperature control channel.
  • the flow path 76C provided between the second temperature adjustment section 61 and the temperature adjustment section 15 is also referred to as a second temperature adjustment flow path.
  • a heat transfer fluid at a second temperature flows through the second temperature control channel.
  • the second temperature control section 61 adjusts the temperature and the temperature control section 15 can be supplied. Therefore, the accuracy of temperature control of the heat transfer fluid supplied to the temperature control section 15 can be improved.
  • a temperature control device that controls the temperature of the temperature control section by circulating a fluid through the temperature control section, a first temperature adjustment section that adjusts the fluid to a first temperature; a second temperature adjustment section that adjusts the fluid adjusted to the first temperature to a second temperature; a first temperature adjustment channel provided between the first temperature adjustment section and the second temperature adjustment section; a second temperature control channel provided between the second temperature control section and the temperature control section; a return flow path provided between the temperature adjustment section and the first temperature adjustment section; Temperature control device.
  • a bypass flow that is provided between the first temperature adjustment section and the temperature adjustment section and supplies the fluid adjusted to the first temperature to the temperature adjustment section without passing through the second temperature adjustment section; road and a flow rate ratio adjusting section that adjusts a flow rate ratio between the fluid supplied to the temperature regulating section from the second temperature regulating channel and the fluid supplied from the bypass channel to the temperature regulating section; further comprising a control unit that controls the flow ratio adjustment unit;
  • the temperature control device according to Supplementary Note 1.
  • thermocontrol unit adjusts the flow rate ratio of the flow rate ratio adjustment unit based on the temperature of the fluid detected by the temperature detection unit.
  • Temperature control device according to supplementary note 2.
  • the flow ratio adjustment section includes a valve provided in at least one of the second temperature control flow path and the bypass flow path, The control unit adjusts the flow rate ratio of the fluid by controlling the valve.
  • the temperature control device according to Supplementary Note 2 or 3.
  • the first temperature adjustment section is a cooling device that cools the fluid
  • the second temperature adjustment section is a heating device that heats the fluid
  • the first temperature adjustment section is a heating device that heats the fluid
  • the second temperature adjustment unit is a cooling device that cools the fluid.
  • the first temperature adjustment section and the second temperature adjustment section are cooling devices that cool the fluid, the second temperature is lower than the first temperature; The temperature control device according to any one of Supplementary Notes 1 to 4.
  • the first temperature adjustment section and the second temperature adjustment section are heating devices that heat the fluid, the second temperature is higher than the first temperature;
  • the temperature control device according to any one of Supplementary Notes 1 to 4. (Appendix 9) a tank for storing the fluid between the first temperature adjustment section and the second temperature adjustment section;
  • the temperature control device according to any one of Supplementary Notes 1 to 8. (Appendix 10) A tank for storing the fluid is provided between the temperature adjustment section and the first temperature adjustment section.
  • the temperature control device according to any one of Supplementary Notes 1 to 8. (Appendix 11) Equipped with the temperature control device according to any one of Supplementary Notes 1 to 10, Substrate processing equipment. (Appendix 12)
  • the temperature control section is a mounting section on which a substrate is placed.
  • the substrate processing apparatus according to appendix 11.
  • Appendix 13 a first temperature adjustment section that adjusts the fluid to a first temperature; a second temperature adjustment section that adjusts the fluid adjusted to the first temperature to a second temperature; the first temperature adjustment section and the second temperature.
  • a first temperature regulation channel provided between the adjustment section, a second temperature regulation channel provided between the second temperature regulation section and the temperature regulation section, and the first temperature regulation section and the temperature regulation section.
  • a temperature control method for a temperature control device comprising: a flow rate ratio adjustment section that adjusts a flow rate ratio of the temperature control section, and controlling the temperature of the temperature control section by circulating the fluid through the temperature control section. controlling the temperature of the fluid flowing into the temperature control section by controlling the flow rate ratio; Temperature control method.
  • Plasma processing apparatus 2 Control section 10 Plasma processing chamber 10a Side wall 11 Substrate support section 51 First temperature adjustment section 52 Tank 53 Pump 60 Temperature adjustment module 61 Second temperature adjustment section 62 Flow ratio adjustment section 621, 622 Flow rate control valve 71, 72, 73, 75 flow path (first temperature control flow path) 74 Branch part 76 Channel (second temperature control channel) 77 Bypass channel 78 Confluence section 79 Outbound channel 80 Return channel 81 to 85 Temperature sensor (temperature detection section) 100 Temperature control module (temperature control device)

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  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Remote Sensing (AREA)
  • Control Of Temperature (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2023/030779 2022-09-01 2023-08-25 温度制御装置、基板処理装置及び温度制御方法 Ceased WO2024048461A1 (ja)

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CN202380060828.3A CN119731610A (zh) 2022-09-01 2023-08-25 温度控制装置、基板处理装置以及温度控制方法
US19/051,263 US20250181087A1 (en) 2022-09-01 2025-02-12 Temperature control device, substrate processing apparatus, and temperature control method

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Publication number Priority date Publication date Assignee Title
JP2013195000A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 熱回収プラントシステム、熱回収プラント制御装置および熱回収プラント制御方法
JP2021009590A (ja) * 2019-07-02 2021-01-28 株式会社Kelk 温度制御システム及び温度制御方法
JP2021149467A (ja) * 2020-03-18 2021-09-27 株式会社Kelk 温度制御システム

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JP4978928B2 (ja) 2007-04-27 2012-07-18 シーケーディ株式会社 温度制御装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013195000A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 熱回収プラントシステム、熱回収プラント制御装置および熱回収プラント制御方法
JP2021009590A (ja) * 2019-07-02 2021-01-28 株式会社Kelk 温度制御システム及び温度制御方法
JP2021149467A (ja) * 2020-03-18 2021-09-27 株式会社Kelk 温度制御システム

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