WO2024029252A1 - 電子部品 - Google Patents

電子部品 Download PDF

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Publication number
WO2024029252A1
WO2024029252A1 PCT/JP2023/024304 JP2023024304W WO2024029252A1 WO 2024029252 A1 WO2024029252 A1 WO 2024029252A1 JP 2023024304 W JP2023024304 W JP 2023024304W WO 2024029252 A1 WO2024029252 A1 WO 2024029252A1
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WO
WIPO (PCT)
Prior art keywords
element body
recess
glass
electronic component
glass film
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Application number
PCT/JP2023/024304
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English (en)
French (fr)
Japanese (ja)
Inventor
知也 大島
悠太 星野
耕市 山田
美希 佐々木
Original Assignee
株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2024519475A priority Critical patent/JPWO2024029252A1/ja
Publication of WO2024029252A1 publication Critical patent/WO2024029252A1/ja

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/224Housing; Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors

Definitions

  • the present disclosure relates to electronic components.
  • the electronic component described in Patent Document 1 includes an element body, internal electrodes, external electrodes, and a glass film.
  • the internal electrode is located inside the element body.
  • a glass film covers the outer surface of the element body.
  • the external electrode covers the outer surface of the element body. Further, the external electrode is electrically connected to the internal electrode.
  • recesses may be formed on the outer surface of the element body. Furthermore, depending on the size of the recess and the thickness of the glass film, the recess may not be completely filled even if a glass film is formed on the outer surface of the element body, so the recess remains. If a recess exists on the outer surface of an electronic component, foreign matter may get caught in the recess, and unreasonable force may be applied to the vicinity of the recess of the electronic component. Such a phenomenon causes cracks and chips in the element body of electronic components.
  • An electronic component includes an element body and a glass film that covers an outer surface of the element body, and the outer surface of the element body has a recessed portion that is a depressed portion with respect to the surroundings.
  • the glass film covers at least the concave portion of the outer surface of the element body, and has a portion that is convex toward the element body according to the shape of the concave portion, and the glass film
  • the device further includes glass particles located on the opposite side of the film from the element body and inside the recess.
  • the glass particles fill the inside of the recess. This makes it difficult for foreign matter other than glass particles to get caught in the recess. Therefore, it is possible to prevent cracks and chips from occurring in the element body due to foreign matter being caught in the recess.
  • FIG. 1 is a perspective view of an electronic component.
  • FIG. 2 is a side view of the electronic component.
  • FIG. 3 is a cross-sectional view taken along line 3-3 in FIG.
  • FIG. 4 is a schematic diagram of an enlarged cross-section of the vicinity of the outer surface of the element body of the electronic component.
  • FIG. 5 is an enlarged view of the vicinity of the recess in the electronic component.
  • FIG. 6 is an enlarged end view of a recess in the electronic component.
  • FIG. 7 is a flowchart illustrating a method for manufacturing electronic components.
  • FIG. 8 is an explanatory diagram illustrating a method of manufacturing an electronic component.
  • FIG. 9 is an explanatory diagram illustrating a method of manufacturing an electronic component.
  • FIG. 10 is an explanatory diagram illustrating a method of manufacturing an electronic component.
  • FIG. 11 is an explanatory diagram illustrating a method of manufacturing an electronic component.
  • FIG. 12 is an explanatory diagram illustrating a method of manufacturing
  • the electronic component 10 is, for example, a surface-mounted negative temperature coefficient thermistor component mounted on a circuit board or the like.
  • the negative characteristic thermistor component has a characteristic that the resistance value decreases as the temperature increases.
  • the electronic component 10 includes an element body 20.
  • the element body 20 has a substantially quadrangular prism shape and has a central axis CA.
  • the axis extending along the central axis CA will be referred to as a first axis X.
  • one of the axes orthogonal to the first axis X is defined as a second axis Y.
  • an axis perpendicular to the first axis X and the second axis Y is defined as a third axis Z.
  • one of the directions along the first axis X is defined as a first positive direction X1
  • the direction opposite to the first positive direction X1 among the directions along the first axis X is defined as a first negative direction X2.
  • one of the directions along the second axis Y is defined as a second positive direction Y1
  • the direction opposite to the second positive direction Y1 among the directions along the second axis Y is defined as a second negative direction Y2.
  • one of the directions along the third axis Z is defined as a third positive direction Z1, and among the directions along the third axis Z, the direction opposite to the third positive direction Z1 is defined as a third negative direction Z2.
  • the outer surface 21 of the element body 20 has six flat surfaces 22.
  • the "surface" of the element body 20 herein refers to what can be observed as a surface when the entire element body 20 is observed. That is, even if there are minute irregularities or steps that cannot be seen unless a part of the element body 20 is observed under a microscope or the like, it is expressed as a flat or curved surface.
  • the six planes 22 face different directions.
  • the six planes 22 are roughly divided into a first end surface 22A facing the first positive direction X1, a second end surface 22B facing the first negative direction X2, and four side surfaces 22C.
  • the four side surfaces 22C are a surface facing the third positive direction Z1, a surface facing the third negative direction Z2, a surface facing the second positive direction Y1, and a surface facing the second negative direction Y2.
  • the outer surface 21 of the element body 20 has 12 boundary surfaces 23.
  • the boundary surface 23 includes a curved surface existing at the boundary between adjacent planes 22. That is, the boundary surface 23 includes, for example, a curved surface formed by rounding the corner formed by the adjacent planes 22.
  • the outer surface 21 of the element body 20 has eight spherical corner surfaces 24.
  • the corner surface 24 is a boundary between three adjacent planes 22.
  • the corner surface 24 includes a curved surface where the three boundary surfaces 23 intersect. That is, the corner surface 24 includes a curved surface formed by, for example, rounding the corner formed by the three adjacent planes 22.
  • the surface of a glass film 50 which will be described later, is identified with the outer surface 21 of the element body 20 and is designated by a reference numeral.
  • the dimension of the element body 20 in the direction along the first axis X is larger than the dimension in the direction along the third axis Z. Further, as shown in FIG. 1, the dimension of the element body 20 in the direction along the first axis X is larger than the dimension in the direction along the second axis Y.
  • the material of the element body 20 is a semiconductor. Specifically, the material of the element body 20 is a ceramic obtained by firing a metal oxide containing at least one of Mn, Fe, Ni, Co, Ti, Ba, Al, and Zn.
  • the electronic component 10 includes two first internal electrodes 41 and two second internal electrodes 42 as wiring.
  • the first internal electrode 41 and the second internal electrode 42 are embedded inside the element body 20 .
  • the material of the first internal electrode 41 is a conductive material.
  • the material of the first internal electrode 41 is palladium.
  • the material of the second internal electrode 42 is the same as that of the first internal electrode 41.
  • the shape of the first internal electrode 41 is a rectangular plate.
  • the main surface of the first internal electrode 41 is perpendicular to the second axis Y.
  • the shape of the second internal electrode 42 is the same rectangular plate shape as the first internal electrode 41.
  • the main surface of the second internal electrode 42 is perpendicular to the second axis Y, similarly to the first internal electrode 41.
  • the dimension of the first internal electrode 41 in the direction along the first axis X is smaller than the dimension of the element body 20 in the direction along the first axis X. Further, as shown in FIG. 1, the dimension of the first internal electrode 41 in the direction along the third axis Z is approximately two-thirds of the dimension of the element body 20 in the direction along the third axis Z. The dimensions of the second internal electrode 42 in each direction are the same as those of the first internal electrode 41.
  • the first internal electrodes 41 and the second internal electrodes 42 are located alternately in the direction along the second axis Y. That is, from the side surface 22C facing the second positive direction Y1 toward the second negative direction Y2, the first internal electrode 41, the second internal electrode 42, the first internal electrode 41, and the second internal electrode 42 are alternately totaled.
  • Four internal electrodes are lined up. In this embodiment, the distance between each internal electrode in the direction along the second axis Y is equal.
  • the two first internal electrodes 41 and the two second internal electrodes 42 are both located at the center of the element body 20 in the direction along the third axis Z.
  • the first internal electrode 41 is located closer to the first positive direction X1.
  • the second internal electrode 42 is located closer to the first negative direction X2.
  • the end of the first internal electrode 41 on the first positive direction X1 side matches the end of the element body 20 on the first positive direction X1 side.
  • the end of the first internal electrode 41 on the first negative direction X2 side is located inside the element body 20 and does not reach the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first negative direction X2 side coincides with the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first positive direction X1 side is located inside the element body 20 and does not reach the end of the element body 20 on the first positive direction X1 side.
  • the electronic component 10 includes a glass film 50.
  • Glass film 50 covers outer surface 21 of element body 20 .
  • the glass film 50 covers the entire area of the outer surface 21 of the element body 20.
  • the material of the glass film 50 is glass.
  • the glass is made of silicon dioxide.
  • the shortest distance from the outer surface 21 of the element body 20 to the outer surface of the glass film 50 in the glass film 50 is defined as the film thickness of the glass film 50.
  • the average thickness of the glass film 50 is 0.1 ⁇ m.
  • the average value of the film thickness of the glass film 50 is calculated as follows. First, an arbitrary cross section of the element body 20 is photographed using an electron microscope. Next, the range in the direction along the outer surface of the glass film 50 is specified for the photographed image. In this range, the cross-sectional area of the glass film 50 is calculated by image processing for a measurement range of at least 5 ⁇ m or more. Then, the thickness of the glass film 50 is calculated by dividing the cross-sectional area of the glass film 50 in the calculated measurement range by the length of the measurement range. That is, the film thickness of the glass film 50 is the film thickness within the measurement range.
  • the electronic component 10 includes a first external electrode 61 and a second external electrode 62.
  • the first external electrode 61 includes a first base electrode 61A and a first metal layer 61B.
  • the first base electrode 61A is laminated on the glass film 50 on a portion of the outer surface 21 of the element body 20 including the first end surface 22A.
  • the first base electrode 61A is a five-sided electrode that covers the first end surface 22A of the element body 20 and a portion of the four side surfaces 22C on the first positive direction X1 side.
  • the materials of the first base electrode 61A are copper and glass.
  • the first base electrode 61A is a sintered body.
  • the first metal layer 61B covers the first base electrode 61A from the outside. Therefore, the first metal layer 61B is laminated on the first base electrode 61A. Further, a portion of the first metal layer 61B protrudes from the first base electrode 61A. In other words, a part of the outer edge of the first metal layer 61B directly covers the glass film 50 without using the first base electrode 61A.
  • the first metal layer 61B has a two-layer structure including a nickel layer and a tin layer in order from the first base electrode 61A side.
  • the second external electrode 62 includes a second base electrode 62A and a second metal layer 62B.
  • the second base electrode 62A is laminated on the glass film 50 on a portion of the outer surface 21 of the element body 20, including the second end surface 22B.
  • the second base electrode 62A is a five-sided electrode that covers the second end surface 22B of the element body 20 and a portion of the four side surfaces 22C on the first negative direction X2 side.
  • the material of the second base electrode 62A is the same as that of the first external electrode 61, which is copper and glass.
  • the second base electrode 62A is a sintered body like the first base electrode 61A.
  • the second metal layer 62B covers the second base electrode 62A from the outside. Therefore, the second metal layer 62B is laminated on the second base electrode 62A. Further, a portion of the second metal layer 62B protrudes from the second base electrode 62A. That is, a part of the outer edge of the second metal layer 62B directly covers the glass film 50 without using the second base electrode 62A.
  • the second metal layer 62B like the first metal layer 61B, has a two-layer structure including a nickel layer and a tin layer in order from the second base electrode 62A side.
  • the second external electrode 62 does not reach the first external electrode 61 on the side surface 22C, and is arranged apart from the first external electrode 61 in the direction along the first axis X.
  • the first external electrode 61 and the second external electrode 62 are not stacked at the central portion in the direction along the first axis X, and the glass film 50 is exposed. Note that in FIGS. 1 to 3, the first external electrode 61 and the second external electrode 62 are illustrated by two-dot chain lines.
  • the first external electrode 61 and the end of the first internal electrode 41 on the first positive direction X1 side are connected via a first penetration portion 71 that penetrates the glass film 50. Therefore, the first external electrode 61 is electrically connected to the first internal electrode 41.
  • the first penetrating portion 71 is formed by palladium forming the first internal electrode 41 extending toward the first external electrode 61 during the manufacturing process of the electronic component 10.
  • the second external electrode 62 and the end of the second internal electrode 42 on the first negative direction X2 side are connected via a second penetration portion 72 that penetrates the glass film 50. Therefore, the second external electrode 62 is electrically connected to the second internal electrode 42.
  • the second penetration part 72 is also formed by palladium forming the second internal electrode 42 extending toward the second external electrode 62 during the manufacturing process of the electronic component 10.
  • FIG. 3 shows the first internal electrode 41 and the first penetration part 71 as separate members with a boundary, there is actually no clear boundary between them. The same applies to the second penetrating portion 72 in this respect. Further, in FIG. 1, illustration of the first penetrating portion 71 is omitted.
  • the outer surface 21 of the element body 20 has one or more recesses 25.
  • the recessed portion 25 is a portion recessed toward the inside of the element body 20 with respect to the surroundings.
  • the glass film 50 described above also covers the recess 25 on the outer surface 21.
  • the glass film 50 follows the concave shape of the recess 25 to some extent. That is, the glass film 50 has a portion that is convex toward the element body 20 depending on the shape of the recess 25 . As a result, depressions are also formed on the outer surface of the glass film 50.
  • the opening edge 26 of the recess 25 is defined as follows. As shown in FIG. 6, first, one recess 25 is viewed in cross section along a plane perpendicular to the outer surface 21. As shown in FIG. Then, on this cross section, a tangent line CL is drawn that circumscribes both outer surfaces 21 on both sides of the recess 25 . At this time, the tangent CL may partially coincide with the outer surface 21. Among the points of contact between the tangent CL and the outer surface 21, the end on the center side of the recess 25 is defined as an opening edge 26.
  • the average value of the outer diameters L1 of the opening edges 26 of the plurality of recesses 25 is 1 .8 ⁇ m.
  • the average value of the outer diameter L1 of the opening edge 26 of the recess 25 is calculated as follows. First, the surface of the glass film 50 is photographed using an electron microscope. Next, the length of the longest line segment that can be drawn from edge to edge of the opening edge 26 of the recess 25 in the photographed image is defined as the outer diameter L1 of the opening edge 26. Then, in the same manner, the outer diameter L1 of the opening edge 26 of each of the five recesses 25 is calculated. The average value of the five outer diameters L1 is taken as the average value of the outer diameter L1 of the opening edge 26 of the recess 25.
  • the average value of the maximum depth H of the plurality of recesses 25 is 1.2 ⁇ m.
  • the maximum depth H of the recessed part 25 here is the depth of the recessed part 25 at its deepest point.
  • the maximum depth H of the recess 25 is calculated as follows. First, the element body 20 is ground in a direction perpendicular to the outer surface 21 by focused ion beam processing. The ground cross section of this element body 20 is photographed, and the maximum depth of one recess 25 on the cross section is measured. The depth at this time is the length from the tangent CL to the inner surface of the recess 25 in a direction perpendicular to the tangent CL circumscribing the outer surface 21 .
  • the element body 20 is ground by a predetermined imaging pitch from the above-mentioned ground cross section by focused ion beam processing.
  • the imaging pitch for focused ion beam processing is, for example, 10 nm.
  • a new ground cross section of the element body 20 is photographed, and the maximum depth of the same recess 25 on the new cross section is measured. In this way, grinding and measurement of the maximum depth of the recess 25 are repeated.
  • the maximum depths in each of the ground cross sections obtained in this manner the largest value is defined as the maximum depth H of the entire recess 25.
  • the maximum depth H of the recesses 25 is measured for five separate recesses 25 by repeating the grinding and photographing described above. Then, the average value of the five maximum depths H is set as the average value of the maximum depth H of the recess 25.
  • the arithmetic mean roughness Ra of the outer surface 21 of the element body 20 excluding the recesses 25 is 0.01 ⁇ m.
  • the arithmetic mean roughness Ra of the outer surface 21 of the element body 20 excluding the recesses 25 can be measured using a laser microscope.
  • the electronic component 10 includes glass particles 51.
  • Glass particles 51 are approximately spherical.
  • the glass particles 51 are located on the opposite side of the glass film 50 from the element body 20 and inside the recess 25 . Note that the glass particles 51 may adhere to a flat portion of the outer surface of the glass film 50 that does not cover the recess 25 .
  • the composition of the glass particles 51 is the same as that of the glass film 50. Further, a part of the surface of the glass particle 51 is integrated with other glass particles 51 and the glass film 50.
  • integrated refers to a state where both are joined to each other and there is no clear interface between them.
  • a plurality of glass particles 51 are located inside the recess 25 for one recess 25, and one glass particle 51 is located inside the recess 25 for one recess 25. There are places where it is located.
  • the average value of the particle size of the plurality of glass particles 51 is 0.4 ⁇ m.
  • the average value of the particle diameter of the glass particles 51 is calculated as follows. First, an image of an arbitrary cross section of the electronic component 10 including the glass particles 51 is acquired using an electron microscope. Next, the outer edge of the glass particle 51 is determined by binarizing the obtained observation image. Next, each of the plurality of glass particles 51 in the observed image is calculated by using the diameter of the area surrounded by the outer edge as a circle equivalent diameter. Then, the average value of the equivalent circle diameters of the plurality of glass particles 51 is calculated as the average value of the particle diameters of the glass particles 51.
  • At least one of the glass particles 51 located inside the recess 25 does not protrude from the opening edge 26 of each recess 25 toward the side opposite to the element body 20 . Specifically, at least the glass particles 51 located on the opposite side of the opening edge 26 of the recess 25, that is, near the bottom of the recess 25, do not protrude from the opening edge 26 of the recess 25.
  • the volume of the glass particles 51 located inside the recess 25 is 70% or less of the volume of the recess 25 . That is, a certain amount of gap is created between the glass particles 51 and the recess 25.
  • the volume of the recess 25 is calculated as follows. First, the recess 25 containing the glass particles 51 is selected, and the internal space of the recess 25 is assumed to be a round hole. Next, as described above, the outer diameter L1 and the maximum depth H of the opening edge 26 of the recess 25 are calculated. Next, the volume of the broken ball is calculated as the volume of the recess 25 from these values.
  • the manufacturing method of the electronic component 10 includes a laminate preparation step S11, an R chamfering step S12, a solvent charging step S13, a catalyst charging step S14, an element charging step S15, and a polymer charging step S15.
  • the method includes a step S16 and a metal alkoxide charging step S17.
  • the method for manufacturing the electronic component 10 further includes a film forming step S18, a drying step S19, a conductor coating step S20, a curing step S21, and a plating step S22.
  • a laminate which is the element body 20 without the boundary surface 23 and the corner surface 24 is prepared. That is, the laminate is in a state before R-chamfering and is in the shape of a rectangular parallelepiped with six planes 22.
  • a plurality of ceramic sheets that will become the element body 20 are prepared. The sheet is in the form of a thin plate. A conductive paste that will become the first internal electrode 41 is laminated on the sheet. A ceramic sheet that will become the element body 20 is laminated on the lamination paste. A conductive paste that will become the second internal electrode 42 is laminated on the sheet. In this way, the ceramic sheet and the conductive paste are laminated.
  • the stacked sheets are pressed together in the stacking direction by means such as a mold press. Thereafter, the crimped product is cut into a predetermined size to form an unfired laminate. Thereafter, a laminate is prepared by firing the unfired laminate at a high temperature.
  • an R chamfering process S12 is performed.
  • a boundary surface 23 and a corner surface 24 are formed on the laminate prepared in the laminate preparation step S11.
  • the corners of the laminate are rounded to form a curved boundary surface 23 and a curved corner surface 24 .
  • a recess 25 is formed on the outer surface 21 of the element body 20 by barrel polishing.
  • the element body 20 is formed.
  • recesses 25 may be formed on the outer surface 21 of the elements 20.
  • the degree of polishing by barrel polishing is small, the irregularities on the outer surface 21 of the element body 20 that were formed before barrel polishing may remain as recesses 25.
  • a solvent injection step S13 is performed.
  • 2-propanol is charged as the solvent 82 into the reaction vessel 81.
  • a catalyst charging step S14 is performed.
  • FIG. 9 in the catalyst charging step S14, first, stirring of the solvent 82 in the reaction vessel 81 is started. Then, aqueous ammonia is poured into the reaction vessel 81 as an aqueous solution 83 containing a catalyst.
  • the catalyst in this embodiment is a hydroxide ion, and functions as a catalyst that promotes the hydrolysis of metal alkoxide 85, which will be described later.
  • an element loading step S15 is performed. As shown in FIG. 10, in the element loading step S15, the plurality of elements 20 previously formed in the R-chamfering process S12 as described above are charged into the reaction container 81.
  • a polymer charging step S16 is performed. As shown in FIG. 11, in the polymer charging step S16, polyvinylpyrrolidone is charged as the polymer 84 into the reaction vessel 81. As a result, the polymer 84 introduced into the reaction container 81 is adsorbed onto the outer surface 21 of the element body 20 .
  • a metal alkoxide charging step S17 is performed.
  • liquid tetraethyl orthosilicate is charged as the metal alkoxide 85 into the reaction vessel 81.
  • tetraethyl orthosilicate is sometimes called tetraethoxysilane.
  • the amount of metal alkoxide 85 introduced in the metal alkoxide introduction step S17 is calculated based on the area of the outer surface 21 of the element body 20 introduced in the element body introduction step S15. Specifically, it is calculated by multiplying the amount of metal alkoxide 85 per element body 20 necessary to form the glass film 50 covering the outer surface 21 of the element body 20 by the number of element bodies 20. .
  • a film forming step S18 is performed.
  • the stirring of the solvent 82 started in the above-mentioned solvent charging step S13 is continued for a predetermined period of time after the metal alkoxide 85 is charged into the reaction vessel 81 in the metal alkoxide charging step S17.
  • the glass film 50 and the glass particles 51 are formed by a liquid phase reaction within the reaction vessel 81.
  • the glass particles 51 enter the inside of the recess 25 of the element body 20, and then further enlarge due to a liquid phase reaction. Further, the glass particles 51 are attracted to each other, or the glass particles 51 and the glass film 50 are attracted to each other. As a result, the glass particles 51 are less likely to pop out from the recess 25.
  • a drying step S19 is performed.
  • the element body 20 is taken out from the reaction vessel 81 and dried.
  • the sol-like glass film 50 and glass particles 51 are dried and become gel-like glass film 50 and glass particles 51.
  • a conductor coating step S20 is performed.
  • two parts of the surface of the glass film 50 are formed: a part including a part covering the first end face 22A of the element body 20, and a part including a part covering the second end face 22B of the element body 20.
  • a curing step S21 is performed. Specifically, in the curing step S21, the glass particles 51, the glass film 50, and the element body 20 coated with the conductive paste are heated. As a result, the water and polymer 84 are vaporized from the gel-like glass film 50 and glass particles 51, and as shown in FIG. 3, the glass film 50 and glass particles 51 are fired and hardened. At this time, the surface of the glass particles 51 is cured while being integrated with other glass particles 51 and the glass film 50. Furthermore, in the curing step S21, the conductor paste applied in the conductor coating step S20 is fired, thereby forming the first base electrode 61A and the second base electrode 62A.
  • the first penetrating portion 71 extends through the glass film 50 from the first internal electrode 41 toward the first base electrode 61A, thereby connecting the first internal electrode 41 and the first base electrode 61A.
  • the second through portion 72 that connects the second internal electrode 42 and the second base electrode 62A.
  • a plating step S22 is performed. Electroplating is performed on the first base electrode 61A and the second base electrode 62A. As a result, a first metal layer 61B is formed on the surface of the first base electrode 61A. Further, a second metal layer 62B is formed on the surface of the second base electrode 62A. Although not shown, the first metal layer 61B and the second metal layer 62B are electroplated with two types of metal, nickel and tin, so that they have a two-layer structure. In this way, electronic component 10 is formed.
  • the glass particles 51 fill the inside of the recess 25. This makes it difficult for foreign matter other than the glass particles 51 to get caught in the recess 25. Therefore, it is possible to prevent cracks and chips from occurring in the element body 20 due to foreign objects other than the glass particles 51 being caught in the recesses 25.
  • the thickness of the glass film 50 must be thicker than the maximum depth H of the recess 25. If such a thick glass film 50 is employed, the size of the electronic component 10 will increase. On the other hand, in this embodiment, since the recesses 25 are filled with the glass particles 51, the thickness of the glass film 50 can be made smaller than when the recesses 25 are filled with the glass film 50.
  • the volume of the glass particles 51 located inside the recess 25 is 70% or less of the volume of the recess 25. In other words, there is a certain amount of gap between the glass particles 51 and the recesses 25. Therefore, the stress caused when the element body 20 and the glass film 50 are deformed due to temperature changes or the like can be buffered by the gap inside the recess 25. Therefore, unreasonable stress can be suppressed from acting on the glass film 50 and glass particles 51 that cover the recess 25 and its vicinity.
  • the average particle size of the plurality of glass particles 51 is 0.4 ⁇ m. According to this configuration, the glass particles 51 easily enter the inside of the recess 25 during the film forming step S18.
  • the average value of the outer diameter L1 of the opening edges 26 of the plurality of recesses 25 is 1.8 ⁇ m. According to this configuration, the glass particles 51 easily enter the inside of the recess 25 during the film forming step S18.
  • the glass particles 51 located near the bottom of the recess 25 do not protrude from the opening edge 26 of the recess 25 . Therefore, it is possible to prevent foreign objects from getting caught on the glass particles 51 that have protruded from the opening edge 26 of the recess 25.
  • the average value of the maximum depth H of the plurality of recesses 25 is 1.2 ⁇ m. According to this configuration, the glass particles 51 easily enter the inside of the recess 25 during the film forming step S18.
  • the arithmetic mean roughness Ra of the portion of the outer surface 21 of the element body 20 excluding the recesses 25 is 0.01 ⁇ m. That is, the portion of the outer surface 21 of the element body 20 excluding the recess 25 is flat compared to the depression of the recess 25 . Therefore, foreign matter is less likely to get caught on the outer surface 21 of the element body 20 except for the recess 25. Therefore, it is possible to suppress the generation of cracks and chips in the element body 20 due to foreign objects being caught on the outer surface 21 of the element body 20.
  • the glass film 50 If the thickness of the glass film 50 is greater than the maximum depth H of the recess 25, the glass film 50 will completely fill the recess 25. In this state, stress is applied inside the recess 25 by the glass film 50, which may cause the element body 20 to break.
  • the average thickness of the glass film 50 is 0.1 ⁇ m. That is, the thickness of the glass film 50 is smaller than the average value of the maximum depth H of the recesses 25. Therefore, cracking of the element body 20 as described above can be prevented.
  • the first base electrode 61A and the second base electrode 62A are provided on the surface of the glass film 50. According to this configuration, the first base electrode 61A and the second base electrode 62A can come into contact with the glass particles 51. That is, the first base electrode 61A and the second base electrode 62A are in close contact with the surface of the glass particles 51. This makes it difficult for the first base electrode 61A and the second base electrode 62A to peel off.
  • the glass film 50 and the glass particles 51 are formed in the film forming step S18. That is, embedding the glass particles 51 into the recess 25 and forming the glass film 50 on the outer surface 21 of the element body 20 can be performed in the same process. Therefore, according to the embodiment described above, it is possible to suppress an increase in the number of work steps.
  • the electronic component 10 is not limited to a negative characteristic thermistor component.
  • the electronic component 10 may be a piezoelectric component, a multilayer ceramic capacitor, an inductor, or the like, which includes an element body 20 having a recess 25 on the outer surface 21 and a glass film 50.
  • first internal electrodes 41 and second internal electrodes 42 are not limited to the example of the above embodiment.
  • the number of first internal electrodes 41 may be less than two or more. The same applies to the second internal electrode 42 in this respect.
  • the average value of the film thickness of the glass film 50 is not limited to the example of the above embodiment. Note that if the glass film 50 is thick enough to completely fill the recesses 25, there is a risk that the size of the electronic component 10 as a whole will increase and that stress concentration will occur in the recesses 25. be. Therefore, it is preferable that the average thickness of the glass film 50 be smaller than the maximum depth H of the recess 25.
  • the average thickness of the glass film 50 is preferably 0.03 ⁇ m or more and 1 ⁇ m or less.
  • the material of the first base electrode 61A and the material of the second base electrode 62A are not limited to the examples of the above embodiment.
  • the material of the first base electrode 61A and the material of the second base electrode 62A may be a mixture of silver and glass.
  • the average value of the outer diameter L1 of the opening edge 26 of the plurality of recesses 25 is not limited to the example of the above embodiment. Note that, in order to obtain the effect described in (7) above, the average value of the outer diameter L1 of the opening edge 26 of the plurality of recesses 25 is preferably larger than the average value of the particle diameters of the glass particles 51. For example, the average value of the outer diameter L1 of the opening edge 26 of the recess 25 is preferably 0.3 ⁇ m or more and 3 ⁇ m or less.
  • the average value of the maximum depth H of the plurality of recesses 25 is not limited to the example of the above embodiment. Note that, in order to make it easier for the glass particles 51 to enter the inside of the recesses 25, the average value of the maximum depth H of the plurality of recesses 25 is preferably larger than the average value of the glass particles 51. For example, the average value of the maximum depth H of the recesses 25 is preferably 0.3 ⁇ m or more and 3 ⁇ m or less.
  • the arithmetic mean roughness Ra of the portion of the outer surface 21 of the element body 20 excluding the recesses 25 is not limited to the example of the above embodiment. In order to obtain the effect described in (10) above, it is preferable that the arithmetic mean roughness Ra of the portion of the outer surface 21 of the element body 20 excluding the recesses 25 is smaller.
  • the arithmetic mean roughness Ra is preferably, for example, 0.005 ⁇ m or more and 0.1 ⁇ m or less.
  • the glass particles 51 do not need to be integrated with other glass particles 51 and the glass film 50. Furthermore, the glass particles 51 may be integrated with either one of the other glass particles 51 or the glass film 50.
  • a plurality of glass particles 51 may not be located inside one recess 25. That is, only one glass particle 51 may be stored inside each recess 25.
  • the average value of the particle diameters of the plurality of glass particles 51 is not limited to the example of the above embodiment.
  • the average value of the particle diameters of the plurality of glass particles 51 is smaller than the average value of the outer diameter L1 of the opening edge 26 of the plurality of recesses 25.
  • the average particle diameter of the glass particles 51 is preferably 0.15 ⁇ m or more and 0.8 ⁇ m or less.
  • a part or all of the glass particles 51 located inside the recess 25 may protrude from the opening edge 26 of the recess 25 on the side opposite to the element body 20. That is, the glass particles 51 may protrude from the opening edge 26 of the recess 25. Even in that case, at least the effect described in (1) can be obtained.
  • the glass particles 51 may not be formed in the film forming step S18.
  • the volume of the glass particles 51 located inside the recess 25 may be larger than 70% of the volume of the recess 25.
  • the larger the ratio of the volume of the glass particles 51 to the volume of the recess 25 is, the more stress acts on the recess 25 when the glass film 50 and the glass particles 51 are deformed.
  • the ratio of the volume of the glass particles 51 to the volume of the recess 25 is preferably 30% or more and 70% or less.
  • the electronic component further comprises glass particles located on the opposite side and inside the recess.
  • the average value of the outer diameters of the opening edges of the plurality of recesses is 0.3 ⁇ m or more and 3 ⁇ m or less.
  • electronic components [7] The electronic component according to any one of [1] to [6], wherein the average maximum depth of the plurality of recesses is 0.3 ⁇ m or more and 3 ⁇ m or less.
  • the arithmetic mean roughness of the outer surface of the element body, excluding the recessed portions, is 0.005 ⁇ m or more and 0.1 ⁇ m or less, according to any one of [1] to [7].
  • electronic components [9] When the shortest distance from the outer surface of the element body to the outer surface of the glass film is defined as the film thickness of the glass film, the average value of the film thickness of the glass film is 0.03 ⁇ m or more and 1 ⁇ m.
  • the electronic component according to any one of [1] to [8] below.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2023/024304 2022-08-02 2023-06-30 電子部品 WO2024029252A1 (ja)

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JP2021027163A (ja) * 2019-08-05 2021-02-22 三菱マテリアル株式会社 保護膜付きサーミスタおよびその製造方法

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JP4872306B2 (ja) * 2005-10-27 2012-02-08 Tdk株式会社 薄膜電子部品用基板の製造方法及びそれを用いた薄膜電子部品の製造方法
JP7268393B2 (ja) * 2019-02-22 2023-05-08 三菱マテリアル株式会社 サーミスタの製造方法

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