WO2024021778A1 - 一种hjt电池的电流引出结构及其制备方法 - Google Patents

一种hjt电池的电流引出结构及其制备方法 Download PDF

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Publication number
WO2024021778A1
WO2024021778A1 PCT/CN2023/094426 CN2023094426W WO2024021778A1 WO 2024021778 A1 WO2024021778 A1 WO 2024021778A1 CN 2023094426 W CN2023094426 W CN 2023094426W WO 2024021778 A1 WO2024021778 A1 WO 2024021778A1
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Prior art keywords
tco layer
conductive adhesive
metal strip
adhesive material
current extraction
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PCT/CN2023/094426
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English (en)
French (fr)
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张伟伦
曹育红
陈章洋
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常州时创能源股份有限公司
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Publication of WO2024021778A1 publication Critical patent/WO2024021778A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of photovoltaics, and in particular to a current extraction structure of an HJT battery and a preparation method thereof.
  • auxiliary grid lines guide the current generated by the semiconductor material through the photovoltaic effect, and the main grid lines collect various The current on the auxiliary grid is sent out through the welding strip welded on it.
  • the main gridless solar cell is a new type of photovoltaic solar cell.
  • the front of the solar cell only uses multiple auxiliary grid lines. , and connect it directly to the auxiliary grid lines with extremely thin solder ribbons, which can reduce the grid line occlusion on the front of the main grid solar cell, thereby increasing the light-receiving area of the solar cell, improving the photoelectric conversion efficiency of the solar cell, and increasing Solar cell power.
  • HJT battery components without main grids if traditional methods are used, the metal ribbons with solder on the surface need to be aligned with the grid lines one by one, then flux is applied, and finally they are heated and welded together.
  • the width of HJT battery grid lines is generally only less than 100 microns, which requires high alignment accuracy of the solder ribbons.
  • the present invention provides a current extraction structure of an HJT battery.
  • the HJT battery is provided with a front TCO layer and a back TCO layer, and the surfaces of the front TCO layer and the back TCO layer are not provided with main grid lines and Auxiliary grid line;
  • the current extraction structure includes: a front metal strip connected to the front TCO layer through a conductive adhesive material, and a back metal strip connected to the back TCO layer through a conductive adhesive material; the front metal strip, the back metal strip With series connections for HJT batteries.
  • the conductive adhesive material is thermally cured conductive adhesive, UV curable conductive adhesive, pressure-sensitive conductive adhesive or other adhesive materials with conductive capabilities.
  • the conductive adhesive material can be melted and solidified again during component lamination.
  • the present invention also provides a method for preparing the current extraction structure of the HJT battery. Please refer to the examples for specific steps.
  • the HJT battery used in the present invention does not need to be pre-printed with grid lines.
  • the front metal strips and back metal strips used for series connection of HJT batteries do not need to be aligned with the grid lines.
  • the front metal strips and back metal strips only need to be roughly attached to the surface of the HJT battery. area, the accuracy requirement is above 100 microns, and the process difficulty is smaller.
  • the surface of the front metal strip and the back metal strip of the present invention does not need to be tinned, and the connection process does not require aligning the front metal strip, the back metal strip and the grid lines.
  • the present invention does not require the use of metal ribbons with solder to connect HJT batteries in series, and does not require the use of flux during processing.
  • the structure of the invention is simpler.
  • the conductive adhesive material (conductive glue) can be applied thinner on the surface of the front metal strip and the back metal strip, and can achieve less consumption than the main and auxiliary gate lines, thereby reducing silver consumption. quantity, greatly reducing costs.
  • the HJT battery of the present invention has no main grid lines.
  • the conductive adhesive material coated on the front metal strip and the back metal strip can replace the auxiliary grid lines, thereby saving the silver consumption of the auxiliary grid lines.
  • the silver consumption of the main grid is completely eliminated, and the cost advantage is obvious.
  • connection method conventional HJT components need to use the tinned layer of the soldering tape to weld the main and auxiliary grid lines on the battery cells, which requires a welding process before lamination.
  • the present invention only needs to use the front metal tape and the back metal tape coated with conductive adhesive material (conductive glue) to bond the TCO layer of the HJT battery, and the bonding can be cured directly through component lamination.
  • conductive adhesive material conductive glue
  • the present invention eliminates the need for welding process, instead using the lamination process that is used in all components; it combines the curing of conductive adhesive materials and the lamination and packaging of components into one, reducing the process flow.
  • Figure 1 is a schematic diagram of the present invention.
  • the present invention provides a current extraction structure for an HJT battery.
  • the HJT battery is provided with a front TCO layer and a back TCO layer, and the surfaces of the front TCO layer and the back TCO layer are not provided with main grid lines and auxiliary grids.
  • the current extraction structure includes: a front metal strip connected to the front TCO layer through a conductive adhesive material, and a back metal strip connected to the back TCO layer through a conductive adhesive material; the front metal strip and the back metal strip are used For series connection of HJT batteries.
  • the cross-sectional shapes of the front metal strip and the back metal strip are triangle, circle, rectangle, trapezoid or other geometric shapes.
  • the width of the front metal strip and the back metal strip is 20-2000 microns (preferably 100-160 microns).
  • the conductive adhesive material is heat-curing conductive adhesive, UV-curing conductive adhesive, pressure-sensitive conductive adhesive or other adhesive materials with conductive capabilities.
  • the thickness of the conductive adhesive material between the front metal strip and the front TCO layer is 1 to 200 microns (preferably 5 to 15 microns); the thickness of the conductive adhesive material between the back metal strip and the back TCO layer is 1 to 200 microns (preferably 5 to 15 microns).
  • the current extraction structure of the HJT battery of Example 1 can be produced by the preparation methods of Example 2 and Example 3.
  • the invention provides a method for preparing a current extraction structure of an HJT battery; the HJT battery is provided with a front TCO layer and a back TCO layer, and no main grid lines and auxiliary grid lines are provided on the surfaces of the front TCO layer and the back TCO layer; so
  • the preparation method includes the following preparation steps:
  • the conductive adhesive material can choose thermal curing conductive adhesive, UV curing conductive adhesive, Pressure-sensitive conductive adhesive or other conductive adhesive materials;
  • the conductive adhesive materials on the front metal strip and the back metal strip are solidified, so that the front metal strip and the front TCO layer are fixed and electrically connected through the conductive adhesive material, and the back metal strip and the back TCO layer are fixed and electrically connected through the conductive adhesive material.
  • the conductive adhesive material on the front metal strip and the back metal strip can be cured by lamination (hot pressing) during the component lamination step.
  • the present invention also provides another method for preparing a current extraction structure of an HJT battery; the HJT battery is provided with a front TCO layer and a back TCO layer, and the surfaces of the front TCO layer and the back TCO layer are not provided with main grid lines and auxiliary grid lines. ;
  • the preparation method includes the following steps:
  • the conductive adhesive material on the front TCO layer and the back TCO layer through screen printing, laser transfer, template transfer, spray printing or dispensing; and make the printed area of the conductive adhesive material on the front TCO layer consistent with subsequent
  • the setting area of the front metal strip corresponds; the printing area of the conductive adhesive material on the back TCO layer corresponds to the setting area of the subsequent back metal strip; the printing thickness of the conductive adhesive material is 1 to 200 microns (preferably 5 to 15 microns );
  • the conductive bonding material can choose thermal curing conductive adhesive, UV curing conductive adhesive, pressure-sensitive conductive adhesive or other bonding materials with conductive capabilities;
  • the conductive adhesive materials on the front TCO layer and the back TCO layer are solidified, so that the front metal strip and the corresponding front TCO layer are fixed and electrically connected through the conductive adhesive material, and the back metal strip and the corresponding back TCO layer are fixed and electrically connected through the conductive adhesive material. .
  • the conductive adhesive material on the front TCO layer and the back TCO layer can be cured by lamination (hot pressing) during the component lamination step.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Connection Of Batteries Or Terminals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种HJT电池的电流引出结构，所述HJT电池设有正面TCO层和背面TCO层，且正面TCO层、背面TCO层的表面不设置主栅线和副栅线；所述电流引出结构包括：通过导电粘接材料与正面TCO层连接的正面金属带，以及通过导电粘接材料与背面TCO层连接的背面金属带。本发明使用的HJT电池无需预先印刷栅线，用于HJT电池串接的正面金属带、背面金属带无需与栅线对位，精度要求降低，工艺难度更小。本发明结构更简单，能做到比主副栅线更少的耗量，从而降低银耗量，大大降低成本。

Description

一种HJT电池的电流引出结构及其制备方法 技术领域
本发明涉及光伏领域，具体涉及一种HJT电池的电流引出结构及其制备方法。
 背景技术
晶体硅异质结太阳能电池组件作为一个新的研究方向，受到业内普遍关注。
传统HJT电池需要预先在电池表面的TCO层（透明导电膜）上印刷主栅线及副栅线，其中副栅线是将半导体材料通过光生伏特效应所产生的电流引导出来，主栅线收集各副栅线上的电流并通过其上所焊接的焊带输送出去。
而无主栅太阳能电池是一种新型的光伏太阳能电池，通过去除其太阳能电池片的正面的主栅线或使用细栅线替代主栅线，使太阳能电池片的正面仅使用多根副栅线，并以极细的焊带直接与副栅线进行连接，这样能减少无主栅太阳能电池正面的栅线遮挡，从而增大太阳能电池片的受光面积，提高太阳能电池的光电转换效率，增大太阳能电池的功率。
对于无主栅的HJT电池组件，若使用传统方法，需要先将表面带焊锡的金属焊带与栅线一一对齐，再施加助焊剂，最后加热焊接到一起。而HJT电池栅线的宽度一般只有100微米以下，对焊带的对位精度要求很高。
 发明内容
为解决现有技术的缺陷，本发明提供一种HJT电池的电流引出结构，所述HJT电池设有正面TCO层和背面TCO层，且正面TCO层、背面TCO层的表面不设置主栅线和副栅线；所述电流引出结构包括：通过导电粘接材料与正面TCO层连接的正面金属带，以及通过导电粘接材料与背面TCO层连接的背面金属带；所述正面金属带、背面金属带用于HJT电池的串接。
优选的，所述导电粘接材料为热固化导电胶、UV固化导电胶、压敏导电胶或其他具有导电能力的粘接材料。
优选的，所述导电粘接材料可在组件层压过程中再次熔化并固化。
本发明还提供HJT电池的电流引出结构的制备方法，具体步骤参见实施例。
有益效果
本发明的优点和有益效果在于：
本发明使用的HJT电池无需预先印刷栅线，用于HJT电池串接的正面金属带、背面金属带无需与栅线对位，只需将正面金属带、背面金属带贴合至HJT电池表面大致区域，精度要求在100微米以上，工艺难度更小。
与其他无主栅的HJT电池相比，本发明正面金属带、背面金属带表面无需镀锡，且连接过程无需将正面金属带、背面金属带和栅线对齐。
本发明不需要使用带焊锡的金属焊带来串接HJT电池，加工过程中无需使用助焊剂。
本发明结构更简单，在正面金属带、背面金属带表面涂敷导电粘接材料（导电胶）可以涂敷的更薄，能做到比主副栅线更少的耗量，从而降低银耗量，大大降低成本。
与常规有主栅的HJT电池组件相比，本发明的HJT电池无主栅线，正面金属带、背面金属带上涂敷的导电粘接材料可以代替副栅线，在节省副栅线银耗量的同时也完全去除了主栅的银耗，成本优势明显。
连接方式上，常规的HJT组件需要用焊带的镀锡层去焊接电池片上的主副栅线，需要在层压之前有一道焊接工序。而本发明仅需使用涂了导电粘接材料（导电胶）的正面金属带、背面金属带去粘接HJT电池的TCO层，且可以直接通过组件层压来固化粘接。
从生产工艺来看，本发明可无需使用焊接工艺，代替的是使用所有组件都会用到的层压工艺；将导电粘接材料的固化与组件的层压封装二合一，减少了工艺流程。
 附图说明
图1是本发明的示意图。
 本发明的实施方式 具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案如下：
实施例1
如图1所示，本发明提供一种HJT电池的电流引出结构，所述HJT电池设有正面TCO层和背面TCO层，且正面TCO层、背面TCO层的表面不设置主栅线和副栅线；所述电流引出结构包括：通过导电粘接材料与正面TCO层连接的正面金属带，以及通过导电粘接材料与背面TCO层连接的背面金属带；所述正面金属带、背面金属带用于HJT电池的串接。
具体的：
所述正面金属带、背面金属带的截面形状为三角形、圆形、矩形、梯形或其他几何形状。
所述正面金属带、背面金属带的宽度为20～2000微米（优选100～160微米）。
所述导电粘接材料为热固化导电胶、UV固化导电胶、压敏导电胶或其他具有导电能力的粘接材料。
所述正面金属带与正面TCO层之间的导电粘接材料的厚度为1～200微米（优选5～15微米）；所述背面金属带与背面TCO层之间的导电粘接材料的厚度为1～200微米（优选5～15微米）。
实施例1的HJT电池的电流引出结构，可通过实施例2、实施例3的制备方法制得。
实施例2
本发明提供一种HJT电池的电流引出结构的制备方法；所述HJT电池设有正面TCO层和背面TCO层，且正面TCO层、背面TCO层的表面不设置主栅线和副栅线；所述制备方法包括如下步骤制备：
在正面金属带的一面、背面金属带的一面分别涂敷厚度为1～200微米（优选5～15微米）的导电粘接材料；导电粘接材料可选择热固化导电胶、UV固化导电胶、压敏导电胶或其他具有导电能力的粘接材料；
将涂敷有导电粘接材料的正面金属带贴在正面TCO层上，且使正面金属带上的导电粘接材料朝向正面TCO层；将涂敷有导电粘接材料的背面金属带贴在背面TCO层上，且使背面金属带上的导电粘接材料朝向背面TCO层；
将正面金属带、背面金属带上的导电粘接材料固化，使正面金属带与正面TCO层通过导电粘接材料固定电连接，背面金属带与背面TCO层通过导电粘接材料固定电连接。
若导电粘接材料采用热固化导电胶；则可在组件层压步骤中，通过层压（热压）将正面金属带、背面金属带上的导电粘接材料固化。
实施例3
本发明还提供另一种HJT电池的电流引出结构的制备方法；所述HJT电池设有正面TCO层和背面TCO层，且正面TCO层、背面TCO层的表面不设置主栅线和副栅线；所述制备方法包括如下步骤制备：
通过丝网印刷、激光转印、模板转印、喷涂打印或点胶等方式在正面TCO层、背面TCO层上印刷导电粘接材料；且使正面TCO层上导电粘接材料的印刷区域与后续正面金属带的设置区域相对应；使背面TCO层上导电粘接材料的印刷区域与后续背面金属带的设置区域相对应；导电粘接材料的印刷厚度为1～200微米（优选5～15微米）；导电粘接材料可选择热固化导电胶、UV固化导电胶、压敏导电胶或其他具有导电能力的粘接材料；
在正面TCO层的导电粘接材料上设置正面金属带，使正面金属带与正面TCO层上的导电粘接材料对应贴合（正面金属带与正面TCO层上对应的导电粘接材料同向延伸，且正面金属带覆盖正面TCO层上对应的导电粘接材料）；正面金属带与正面TCO层上的导电粘接材料对应贴合后，采用快速固化胶水将正面金属带与正面TCO层预固定；在背面TCO层的导电粘接材料上设置背面金属带，使背面金属带与背面TCO层上的导电粘接材料对应贴合（背面金属带与背面TCO层上对应的导电粘接材料同向延伸，且背面金属带覆盖背面TCO层上对应的导电粘接材料）；背面金属带与背面TCO层上的导电粘接材料对应贴合后，采用快速固化胶水将背面金属带与背面TCO层预固定；快速固化胶水采用UV固化胶，固化方式为紫外线照射；
将正面TCO层、背面TCO层上的导电粘接材料固化，使正面金属带与对应正面TCO层通过导电粘接材料固定电连接，背面金属带与对应背面TCO层通过导电粘接材料固定电连接。
若导电粘接材料采用热固化导电胶；则可在组件层压步骤中，通过层压（热压）将正面TCO层、背面TCO层上的导电粘接材料固化。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (15)

  1.  一种HJT电池的电流引出结构，所述HJT电池设有正面TCO层和背面TCO层；其特征在于，所述电流引出结构包括：通过导电粘接材料与正面TCO层连接的正面金属带，以及通过导电粘接材料与背面TCO层连接的背面金属带。
  2.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面TCO层、背面TCO层的表面不设置主栅线和副栅线。
  3.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面金属带、背面金属带用于HJT电池的串接。
  4.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面金属带、背面金属带的宽度为20～2000微米。
  5.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面金属带与正面TCO层之间的导电粘接材料的厚度为1～200微米；所述背面金属带与背面TCO层之间的导电粘接材料的厚度为1～200微米。
  6.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面金属带与正面TCO层之间的导电粘接材料的厚度为5～15微米；所述背面金属带与背面TCO层之间的导电粘接材料的厚度为5～15微米。
  7.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述正面金属带、背面金属带的截面形状为三角形、圆形、矩形或梯形。
  8.  根据权利要求1所述的HJT电池的电流引出结构，其特征在于，所述导电粘接材料为热固化导电胶、UV固化导电胶或压敏导电胶。
  9.  权利要求1至8中任一项所述HJT电池的电流引出结构的制备方法，其特征在于，包括如下步骤：
    在正面金属带、背面金属带上预设导电粘接材料；
    将预设有导电粘接材料的正面金属带贴在正面TCO层上，且使正面金属带上的导电粘接材料朝向正面TCO层；将预设有导电粘接材料的背面金属带贴在背面TCO层上，且使背面金属带上的导电粘接材料朝向背面TCO层；
    将正面金属带、背面金属带上的导电粘接材料固化，使正面金属带与正面TCO层固定电连接，背面金属带与背面TCO层固定电连接。
  10.  根据权利要求9所述的HJT电池的电流引出结构的制备方法，其特征在于，所述导电粘接材料为热固化导电胶；且在组件层压步骤中，通过层压将正面金属带、背面金属带上的导电粘接材料固化。
  11.  权利要求1至8中任一项所述HJT电池的电流引出结构的制备方法，其特征在于，包括如下步骤：
    在正面TCO层、背面TCO层上预设导电粘接材料；且使正面TCO层上导电粘接材料的设置区域与后续正面金属带的设置区域相对应；使背面TCO层上导电粘接材料的设置区域与后续背面金属带的设置区域相对应；
    在正面TCO层的导电粘接材料上设置正面金属带，使正面金属带与正面TCO层上的导电粘接材料对应贴合；在背面TCO层的导电粘接材料上设置背面金属带，使背面金属带与背面TCO层上的导电粘接材料对应贴合；
    将正面TCO层、背面TCO层上的导电粘接材料固化，使正面金属带与正面TCO层固定电连接，背面金属带与背面TCO层固定电连接。
  12.  根据权利要求11所述的HJT电池的电流引出结构的制备方法，其特征在于，通过丝网印刷、激光转印、模板转印、喷涂打印或点胶等方式在正面TCO层、背面TCO层上预设导电粘接材料。
  13.  根据权利要求11所述的HJT电池的电流引出结构的制备方法，其特征在于，正面金属带与正面TCO层上的导电粘接材料对应贴合后，采用快速固化胶水将正面金属带与正面TCO层预固定；背面金属带与背面TCO层上的导电粘接材料对应贴合后，采用快速固化胶水将背面金属带与背面TCO层预固定。
  14.  根据权利要求13所述的HJT电池的电流引出结构的制备方法，其特征在于，快速固化胶水采用UV固化胶，固化方式为紫外线照射。
  15.  根据权利要求11所述的HJT电池的电流引出结构的制备方法，其特征在于，所述导电粘接材料为热固化导电胶；且在组件层压步骤中，通过层压将正面金属带、背面金属带上的导电粘接材料固化。
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