WO2014190854A1 - 一种激光焊接联接晶体硅太阳能电池的方法 - Google Patents
一种激光焊接联接晶体硅太阳能电池的方法 Download PDFInfo
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- WO2014190854A1 WO2014190854A1 PCT/CN2014/077421 CN2014077421W WO2014190854A1 WO 2014190854 A1 WO2014190854 A1 WO 2014190854A1 CN 2014077421 W CN2014077421 W CN 2014077421W WO 2014190854 A1 WO2014190854 A1 WO 2014190854A1
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- silicon solar
- crystalline silicon
- solar cell
- laser welding
- laser
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 259
- 238000003466 welding Methods 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims abstract description 88
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims description 63
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- 239000013013 elastic material Substances 0.000 claims description 31
- 230000009471 action Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 24
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- 238000005516 engineering process Methods 0.000 description 13
- 230000008901 benefit Effects 0.000 description 12
- 238000005336 cracking Methods 0.000 description 12
- 238000005476 soldering Methods 0.000 description 11
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
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- 229910052751 metal Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- 230000004075 alteration Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
- B32B37/1009—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using vacuum and fluid pressure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a method of producing a crystalline silicon solar cell module, and more particularly to a method of joining a crystalline silicon solar cell.
- the invention provides a method for coupling a crystalline silicon solar cell, which solves the problem of bending and cracking of a crystalline silicon solar cell which occurs in the process of conventionally welding a crystalline silicon solar cell by using the coupling method of the crystalline silicon solar cell of the invention. . Therefore, with the method of laser welding of a crystalline silicon solar cell of the present invention, a conductive strip of a necessary thickness can be used to solve the problem of loss from the battery to the module.
- a crystalline silicon solar cell module is produced by first connecting a crystalline silicon solar cell in parallel or in series by a conductive ribbon according to the design of the crystalline silicon solar cell module, and then bonding the crystal by thermocompression packaging.
- the silicon solar cells are packaged in the front and rear two component panels to meet the requirements of wind, dust, moisture and corrosion resistance in the use of crystalline silicon solar modules.
- the crystalline silicon solar cell may exhibit different degrees of bending, which causes great difficulty in producing the crystalline silicon solar cell module.
- a more serious problem is that the connected crystalline silicon solar cells are prone to cracks under the action of the conductive ribbon, which reduces the photoelectric conversion efficiency of the crystalline silicon solar cell module.
- One of the effective ways to solve the above two problems is to reduce the thickness of the conductive ribbon. After the thickness of the conductive ribbon is reduced, the conductive ribbon becomes softer, and the problem of bending and cracking of the crystalline silicon solar cell after being welded by the conductive ribbon can be significantly improved.
- One of the methods to solve the loss of photoelectric conversion efficiency from a crystalline silicon solar cell to a crystalline silicon solar cell module is to replace the conventional heating soldering technique with a laser welding technique.
- the laser welding technology has the advantages of short heating time, precise controllable heat input, small heat-affected zone, etc., which can effectively avoid the bending and cracking of crystalline silicon solar cells caused by different thermal expansion coefficients. .
- laser welding technology can effectively avoid heat The bending and cracking problems of crystalline silicon solar cells caused by different expansion coefficients, so the thickness of the conductive ribbon can be increased by laser welding technology, thereby effectively reducing the crystal silicon solar cell to the crystalline silicon solar cell module. Loss of photoelectric conversion efficiency.
- One of the conditions for soldering a conductive ribbon to a crystalline silicon solar cell is that the conductive ribbon must be in close contact with the electrodes of the crystalline silicon solar cell.
- the main purpose of the conductive ribbon on the electrode of the crystalline silicon solar cell is to transfer the thermal energy of the conductive ribbon to the electrode of the crystalline silicon solar cell as soon as possible, so that the molten alloy wets the electrode of the crystalline silicon solar cell, and then cools and solidifies.
- the purpose of soldering the conductive strip and the crystalline silicon solar cell is finally achieved.
- Patent application CN101884114A discloses a method of adhering a conductive ribbon to an electrode of a crystalline silicon solar cell. Since the surface of the conductive ribbon and the surface of the electrode of the crystalline silicon solar cell are not very flat, the adhesion method may result in the local area where the conductive ribbon is not closely attached to the crystalline silicon solar cell electrode, thereby Affects the reliability of laser welding.
- the present invention provides a method of fabricating a crystalline silicon solar cell module using laser welding techniques.
- the object of the present invention is to find a method for adhering a conductive ribbon to an electrode of a crystalline silicon solar cell, which ensures that the pressure applied to each point on the conductive ribbon is always consistent, and finally the guide is ensured. Every point on the solder ribbon has good and uniform contact with the crystalline silicon solar cell electrodes.
- Another object of the present invention is to find a method for producing a crystalline silicon solar cell module, which can reduce the number of times a crystalline silicon solar cell is moved during the production process of the component, thereby reducing the crystalline silicon solar cell being The risk of a crack in the process of moving.
- a final object of the present invention is to find a method of producing a crystalline silicon solar cell module which can greatly simplify the operation steps to improve the production efficiency of the crystalline silicon solar cell module.
- the present invention discloses a method for producing a crystalline silicon solar cell module, and more particularly, a method for producing a crystalline silicon solar cell module by using a laser welding technology to connect a crystalline silicon solar cell.
- a vacuum is applied between the upper and lower layers, and under the action of atmospheric pressure, the conductive strip is uniformly pressed by the upper and lower layers to adhere the conductive strip to the electrode of the crystalline silicon solar cell.
- the crystalline silicon solar cells in the crystalline silicon solar cell module are connected in series, or in parallel, or in series and parallel.
- the present invention utilizes the uniformity of atmospheric pressure at any point on the area being pressed, through a solid sheet or a solid sheet layer, such as a solid sheet of rigid material, or a solid sheet of elastic material, or both An overlapping layer of solid sheets of material that applies uniform pressure to one surface of the conductive ribbon such that there is uniform and strong physical contact between the other surface of the conductive ribbon and the electrode surface of the crystalline silicon solar cell.
- the purpose of the conductive ribbon is closely attached to the electrode of the crystalline silicon solar cell.
- the uniform and strong physical contact ensures that in the laser welding process, after the conductive ribbon is subjected to the laser energy, the thermal energy can be quickly transferred to the contacted crystalline silicon solar cell electrode, so that the low dissolved temperature alloy on the conductive ribbon is melted. After wetting and cooling, it solidifies on the crystalline silicon solar cell electrode, effectively completing the laser welding step.
- the present invention provides a method of laser welding a crystalline silicon solar cell.
- the method uses laser welding technology to connect crystalline silicon solar cells of crystalline silicon solar cell modules by means of conductive ribbons in series or in parallel.
- An advantage of the present invention is that the pressure applying method of the present invention enables the pressure applied to any point of all the conductive ribbons in the solar cell module to be uniform. In other words, in the pressing method of the present invention, there is no local pressure difference at any point of the conductive ribbon.
- the pressing method of the present invention is one of the keys to ensuring the application of laser welding technology in the production of crystalline silicon solar cell modules. Since the surface of the conductive ribbon and the surface of the crystalline silicon solar cell electrode are not flat surfaces, the uniformity of the pressure applied to the conductive ribbon is particularly important. Uneven pressure may cause local pressure problem, causing cracking of crystalline silicon solar cells, or partial pressure may be too small, causing the conductive ribbon not to be closely attached to the crystalline silicon solar cell electrode, affecting Laser welding quality.
- the pressing method of the present invention can apply a one-time pressure to all the conductive ribbons in a crystalline silicon solar cell module, that is, the pressing method of the present invention can make all the requirements in one component.
- the soldered conductive ribbon is simultaneously attached to the crystalline silicon solar cell electrode.
- the method of the present invention not only simplifies the pressing operation step, but also the pressure on all the conductive ribbons is uniform, effectively ensuring the welding quality of each solder joint.
- the method of applying pressure to the conductive ribbon of the present invention is not limited by the area, or the pressing method of the present invention can apply pressure to all of the entire crystalline silicon solar cell module to be soldered by the conductive strip. Therefore, another advantage of the present invention is that the disadvantage that the crystalline silicon solar cell is moved a plurality of times during the production of the crystalline silicon solar cell module is avoided.
- the laser welding technology of the present invention can make all crystalline silicon solar cells of a crystalline silicon solar cell module and corresponding The conductive ribbon is placed in one place. After the laser welding of the present invention is implemented, the step of hot pressing the crystal silicon solar cell module can be directly performed, and the efficiency of producing the crystalline silicon solar cell module is greatly improved.
- the laser welding method of the present invention can make all the crystalline silicon solar cells of a crystalline silicon solar cell module and the corresponding conductive ribbons in place at one time, the cracking of the crystalline silicon solar cells caused by multiple movements is eliminated.
- Risk, and therefore another advantage of the present invention is that the method of the crystalline silicon solar cell module of the present invention can employ a thicker conductive ribbon.
- the crystalline silicon solar cell module reduces the series resistance of the crystalline silicon solar cell module after using a thick conductive ribbon, reduces the loss from the crystalline silicon solar cell to the crystalline silicon solar cell module, and improves the crystalline silicon solar cell.
- the output power of the component is not limited to make all the crystalline silicon solar cells of a crystalline silicon solar cell module and the corresponding conductive ribbons in place at one time, the cracking of the crystalline silicon solar cells caused by multiple movements.
- the laser welding method of the present invention can not only produce a solar cell module using a thick conductive strip, but also produce a solar cell module using a lead-free conductive strip.
- lead-free conductive ribbons require not only higher soldering temperatures, but also the lead-free solders that are poorly fluid and highly oxidizable, making it difficult to use lead-free leads using traditional soldering methods.
- Welding tape The laser welding method of the invention not only closely adheres the conductive ribbon to the electrodes of the solar cell, but also increases the effective heat transfer between the conductive ribbon and the metal electrode of the solar cell, and solves the poor fluidity of the lead-free conductive ribbon.
- the problem of the extraction, and the laser welding method of the present invention is to perform laser welding under vacuum conditions, and the problem of extremely easy oxidation of the lead-free solder is effectively solved. Therefore, in carrying out the laser welding of the present invention, even if a lead-free conductive tape is used, the temperature of the laser welding can be minimized.
- the method for producing a crystalline silicon solar cell module for laser welding of the present invention is suitable for most crystalline silicon solar cells, and is particularly suitable for those crystalline silicon solar cells that are sensitive to soldering temperatures. Due to the laser welding technology, the heated crystalline silicon solar cell is limited to a limited heating area and a very short heating time. Therefore, the photoelectric conversion characteristics of the crystalline silicon solar cells sensitive to the soldering temperature are not laser-welded. Will be damaged.
- FIG. 1 Schematic diagram of an embodiment of a crystalline silicon solar cell module with double-sided electrodes
- Figure 2. Method for creating a vacuum between the upper and lower laminates and a cross-sectional view of an embodiment of performing a laser welding
- FIG. 1 Schematic diagram of a crystalline silicon solar cell module with a single-sided electrode
- Figure 4 A method of creating a vacuum between the upper and lower laminates and a cross-sectional view of a single-sided laser welding
- the crystalline silicon solar cell module of the present invention is produced by making the absolute gas pressure between the upper and lower layers lower than atmospheric pressure, and relying on the pressure of the atmospheric pressure applied to the outside of the upper and lower layers to apply the upper and lower layers.
- the conductive ribbon between them is evenly adhered to the electrodes of the crystalline silicon solar cell which is also between the upper and lower layers.
- the upper and lower layers are each formed by a solid sheet of rigid material and a solid sheet of elastomer.
- the rigid material solid sheet 110 in the lower laminate is first placed on a table.
- the table top can be a horizontal work surface or a work surface with a certain angle of inclination.
- the preferred work surface of the present invention is a work surface that can be laser welded.
- the laser welding step of the present invention can be directly carried out after all the materials required for producing the solar cell module of the present invention are placed.
- the rigid sheet of rigid material 110 in the underlayer of the present invention may be laser permeable or laser opaque.
- the material of the rigid material solid sheet 110 in the preferred underlayer of the present invention may be glass or a laser permeable polymer.
- the rigid material solid sheet 110 in the preferred underlayer of the present invention is one of the panels, such as glass, from which the crystalline silicon solar cell module is to be fabricated.
- the purpose of directly selecting one of the panels of the crystalline silicon solar cell module to be prepared as the rigid material solid sheet 110 in the preferred underlayer of the present invention is to weld the coupled crystalline silicon solar energy after performing the laser welding step of the present invention.
- the battery pack can be directly packaged by hot pressing, which simplifies the production steps of the crystalline silicon solar cell module while avoiding the risk of cracking of the crystalline silicon solar cell.
- a layer of elastic material solid sheet 210 is included in the lower layer, that is, the lower layer is composed of a solid sheet of rigid material and a layer of elastic material. It consists of a solid sheet.
- a layer of elastic material solid sheet 210 is placed on the rigid sheet of solid material 110 in the lower layer.
- the elastic properties of the elastic material solid sheet 210 can make the conductive ribbon 310 more uniformly pressed by the rigid material solid sheet 110 in the underlayer.
- the preferred elastic material solid sheet 210 of the present invention may be a packaging material for a crystalline silicon solar cell module.
- the elastic material solid sheet 210 is a crystalline silicon solar cell module encapsulating material, such as polyethylene vinyl acetate (EVA) and polyvinyl butyral (PVB), etc., after the laser welding joining method of the present invention is implemented, after the welding is joined It is possible that the crystalline silicon solar cell is directly packaged by hot pressing, which further simplifies the production steps of the crystalline silicon solar cell module, and further avoids the risk of cracking of the crystalline silicon solar cell.
- EVA polyethylene vinyl acetate
- PVB polyvinyl butyral
- the conductive ribbon 310 and the crystalline silicon solar cell 410 of the crystalline silicon solar cell module are prepared. They are placed one by one on the lower layer.
- the conductive ribbon 310 is first placed on the underlayer, and the location of the conductive strip 310 on the underlayer should be the electrode location where the crystalline silicon solar cell 410 is subsequently placed.
- a crystalline silicon solar cell 410 is then placed over the conductive ribbon 310 to align the electrodes of the crystalline silicon solar cell 410 with the conductive ribbon 310.
- the conductive ribbon 310 and the crystalline silicon solar cell 410 are then repeatedly placed repeatedly until all crystalline silicon solar cells 410 and A corresponding conductive ribbon 310 is placed over the underlayer.
- the conductive ribbon 310 and the crystalline silicon solar cell 410 may be arranged in series as needed, or may be arranged in series and in parallel.
- the preferred number of crystalline silicon solar cells 410 of the present invention should be the number of all cells of the assembly. Therefore, a preferred solution of the present invention is to place all of the crystalline silicon solar cell 410 of the assembly and the conductive ribbon 310 required to connect all the crystalline silicon solar cells 410 on the underlying layer, so that the laser welding method of the present invention can be continuous. Complete all welding tasks for this component at a time.
- the conductive ribbon 310 may be first attached to the electrodes of the crystalline silicon solar cell 410, and then the conductive ribbon 310 and the crystalline silicon solar cell 410 are placed one by one on the underlayer. This placement method can reduce the difficulty of aligning the conductive ribbon 310 to the electrodes of the crystalline silicon solar cell 410.
- the conductive ribbon 310 used in the present invention is a conductive ribbon such as an alloy containing tin which is immersed on the outer surface of the copper strip with an alloy having a low melting temperature characteristic. Any of the conductive ribbons of a commercially available crystalline silicon solar cell module can be used for the conductive ribbon 310 of the present invention.
- the low melting temperature alloy immersed in the preferred conductive ribbon of the present invention is a lead-free low temperature molten alloy such as a lead-free tin-containing alloy.
- crystalline silicon solar cell 410 can be a conventional screen printed crystalline silicon solar cell. According to the design of a conventional screen-printed crystalline silicon solar cell, its positive and negative electrodes are respectively distributed on two surfaces of the solar cell.
- the crystalline silicon solar cell 410 can be a double-sided battery. Unlike traditional screen-printed batteries, the back side of double-sided crystalline silicon solar cells replaces the traditional screen-printed back surface field technology with backside passivation. When the back side of the double-sided crystalline silicon solar cell receives light, the received light energy can also be converted into DC power.
- the crystalline silicon solar cell 410 can be placed with its light-receiving face down while in some other embodiments of the invention
- the light receiving surface of the crystalline silicon solar cell 410 can also be upward.
- a preferred method of the present invention is to expose the light-receiving side of the crystalline silicon solar cell 410, which has the advantage of being more advantageous for the production of crystalline silicon solar cell modules.
- the sealing ring 510 and the upper layer are sequentially placed.
- the function of the seal ring 510 is to maintain the degree of vacuum between the upper and lower press layers in the method of laser welding the conductive strip 310 and the crystalline silicon solar cell 410 of the present invention.
- the material of the seal 510 can be any commercially available elastomeric seal material.
- the seal ring 510 can be directly secured to the upper laminate.
- the advantage of directly fixing the sealing ring 510 to the upper pressing layer is that, in the case where the upper pressing layer is not used as an outer plate of the crystalline silicon solar cell module, the crystalline silicon solar cell module can be very hot before being packaged by hot pressing. Convenient to put the crystalline silicon solar cell The outer plate replacement of the piece simplifies the step of replacing the outer plate of the crystalline silicon solar cell module.
- the upper laminate is formed by laminating a layer of elastic material solid sheet 220 and a layer of rigid material solid sheet 120.
- the elastic material solid sheet 220 covered on the crystalline silicon solar cell 410 and the conductive ribbon 310 functions similarly to the elastic material solid sheet 210, that is, the elastic property of the elastic material solid sheet 220 allows the conductive ribbon 310 to be laminated Under the action of the pressure is more uniform.
- the preferred elastic material solid sheet 220 of the present invention may be a packaging material for a crystalline silicon solar cell module such as polyethylene vinyl acetate (EVA) and polyvinyl butyral (PVB).
- An advantage of using a packaging material of a crystalline silicon solar cell module as the elastic material solid sheet 220 of the present invention is that after performing the laser welding joining step of the present invention, the crystalline silicon solar cell module may be directly packaged by hot pressing, which further simplifies The production steps of crystalline silicon solar cell modules also further avoid the risk of cracking of crystalline silicon solar cells.
- the rigid sheet of rigid material 120 of the present invention may be a laser permeable outer panel or a laser opaque outer panel.
- the optimized rigid material solid sheet 120 of the present invention may be glass or other transparent polymer plastic.
- the rigid sheet of rigid material 120 directly utilizes one of the outer sheets of the crystalline silicon solar module.
- the crystalline silicon solar cell module can directly perform the hot press packaging step, which greatly simplifies the production operation of the crystalline silicon solar cell module. .
- the number of the solid laminate layers of the upper and lower laminate layers of the present invention and the material of the solid laminate can be variously changed depending on the design of the crystalline silicon solar cell module and the specific production conditions.
- the upper laminate may not be an upper laminate formed by a solid sheet of elastic material and a solid sheet of rigid material, but a solid sheet of rigid material is directly used as an upper layer, for example, directly A layer of glass is used as the upper laminate to accommodate the design of various crystalline silicon solar modules and the specific production conditions.
- the step of laser welding the conductive ribbon 310 and the crystalline silicon solar cell 410 of the present invention may be carried out.
- One of the key techniques of the method of laser welding the conductive strip 310 and the crystalline silicon solar cell 410 of the present invention is to make the absolute gas between the upper and lower layers by vacuuming between the upper and lower layers. The pressure is less than the pressure of atmospheric pressure. By using the pressure difference between the absolute gas pressure and the atmospheric pressure between the upper and lower press layers, uniform pressure is applied to all of the conductive strips 310 between the upper and lower press layers by the upper and lower press layers.
- the step of laser welding the conductive strip 310 and the crystalline silicon solar cell 410 of the present invention is carried out after ensuring that the solder ribbon 310 is in close contact with the electrodes of the crystalline silicon solar cell 410.
- Uniform pressure is applied so that all of the conductive ribbons 310 between the upper and lower rigid material solid sheets 120 and 110 can simultaneously adhere to the electrodes of the crystalline silicon solar cell 410 and are subjected to any point on the conductive ribbon 310.
- the pressure is equal.
- the method of the present invention for making the absolute gas pressure between the upper and lower pressure layers smaller than the atmospheric pressure outside thereof ensures the area of the entire solar battery module, regardless of the area
- all of the conductive ribbons 310 are in close contact with the electrodes of the crystalline silicon solar cell 410 at the same pressure throughout the area of the solar cell module.
- the method for pressing the conductive ribbon 310 of the present invention can effectively solve the problem of partial pressure unevenness, avoiding the risk of cracking of the crystalline silicon solar cell 410 due to excessive local pressure, and effectively preventing it. Ineffective welding caused by partial pressure is too small.
- Another advantage of the method of laser welding the conductive ribbon 310 and crystalline silicon solar cell 410 of the present invention is that the method of the present invention is implemented for all of the conductive ribbon 310 and crystalline silicon solar cell 410 that are required to be solder bonded.
- the laser welding joining method of the present invention only needs to draw a vacuum between the upper and lower press layers, and all the conductive strips 310 between the upper and lower press layers are subjected to the same pressure.
- the pressing method of the present invention significantly simplifies the operation of applying pressure to the conductive ribbon 310 during the laser welding joining process, thereby facilitating mass production.
- the laser welding step of the present invention is carried out under the condition that the conductive ribbon 310 is held against the electrode of the crystalline silicon solar cell 410, that is, while maintaining the degree of vacuum between the upper and lower laminates.
- the method of maintaining the degree of vacuum between the upper and lower laminates can be continuously vacuumed by a vacuum pump to maintain its vacuum.
- a sealing valve may be mounted on the suction port 710, and when the sealing valve is closed, the degree of vacuum between the upper and lower laminates may be maintained.
- the vacuuming station and the laser welding joint operating table can be separated to make the production method of the crystalline silicon solar cell module embodying the present invention more flexible.
- the conductive ribbon 310 is in close contact with the electrode of the crystalline silicon solar cell 410, the thermal energy converted by the conductive ribbon 310 after receiving the laser energy during the laser welding process is ensured. It can be quickly transferred to the electrode of the contacted crystalline silicon solar cell 410, and the molten low-temperature molten alloy outside the conductive ribbon 310 wets the electrode of the crystalline silicon solar cell 410 and solidifies on the electrode of the solar cell 410, effectively The laser welding joining step of the present invention is completed.
- the laser welding joining method of the present invention may perform a laser welding joining step of the upper surface and the lower surface, respectively, using the upper laser 620 or the lower laser 610.
- only the upper laser 620 or the lower One of the lasers 610 implements the laser welding joining method of the present invention.
- the conductive ribbon 310 adhering to the positive and negative surface metal electrodes of the crystalline silicon solar cell 410 can be simultaneously heated, and a laser beam is used while soldering to the crystal.
- the irradiation energy of the laser may be reduced, and the soldering between the conductive ribbon 310 and the crystalline silicon solar cell 410 is only This occurs on the side of the conductive ribbon 310 that is irradiated with the laser, and the conductive strip 310 on the other side of the solar cell 410 is not soldered to the electrode of the crystalline silicon solar cell 410.
- the laser welding joining method of the present invention performs the laser welding joining method of the present invention on the other side of the solar cell 410 after the laser welding of one of the surfaces is performed to join the conductive electrodes of the conductive strip 310 and the crystalline silicon solar cell 410.
- the optimized laser welding coupling method of the present invention uses the upper and lower lasers 620 and 610 to simultaneously perform laser welding joints on the electrode points corresponding to the front and back sides of the crystalline silicon solar cell 410.
- the soldering temperature must be increased to meet the requirements of heating the crystalline silicon solar cell 410 electrode. Due to the temperature difference between the front and back sides, this laser welding method causes the crystalline silicon solar cell 410 to be subjected to a large thermal stress, which may cause a crack problem in the crystalline silicon solar cell 410.
- the electrodes of the crystalline silicon solar cell 410 are reduced.
- the temperature gradient with the conductive ribbon 310 and the temperature gradient existing inside the crystalline silicon solar cell 410 effectively reduce the thermal stress on the crystalline silicon solar cell 410 during laser welding, avoiding the generation of the crystalline silicon solar cell 410. The possibility of cracking.
- the illumination angles of the upper and lower laser beams 620 and 610 to the conductive ribbon 310 may be changed, that is, instead of the simultaneous vertical illumination, the upper and lower lasers 620 and 610 are obliquely simultaneously to the conductive ribbon 310. With a little illumination, the possibility of the upper and lower two lasers 620 and 610 being opposed can be completely avoided.
- the welding of the points of the assembly that need to be welded can be accomplished by moving the lasers 610 and 620. It is also possible to use a method of moving the work surface to complete the welding of all the parts of the assembly that need to be welded. Alternatively, the welding of the points that need to be welded can be accomplished simultaneously, or by separately moving the lasers 610 and 620, and the work surface.
- the advantage of using the simultaneous or separate movement of the laser and the work surface is that the laser and the working range of the work surface can be reduced, which not only reduces the cost of the laser welding equipment, but also improves the movement accuracy of the laser and the work surface.
- the laser used in the laser welding of the conductive ribbon 310 and the crystalline silicon solar cell 410 of the present invention may be a continuous laser or a pulsed laser. If the invention uses continuous laser, control laser power density and excitation The light welding speed can achieve the purpose of welding without causing too much thermal stress on the battery.
- the present invention can also use a pulsed laser, in addition to controlling the laser power density and welding speed, it is also necessary to control the laser pulse waveform and the laser pulse width.
- the laser welding used in the laser welding of the conductive ribbon 310 and the crystalline silicon solar cell 410 of the present invention may be that one laser beam is repeatedly applied to the desired welding region one or more times, or may be a double laser beam or multiple lasers.
- the bundles work together in the desired weld zone. Its purpose is to control the temperature gradient of solder heating and cooling, reduce the thermal stress on crystalline silicon solar cells, and avoid the possibility of cracking of crystalline silicon solar cells.
- a laser beam performs multiple laser heating on a solder joint, and the power density, focal plane position, and pulse waveform of each light output may be different to further reduce the heat of the laser to the crystalline silicon solar cell. stress.
- the laser welding mode used in the laser welding of the conductive ribbon 310 and the crystalline silicon solar cell 410 of the present invention may be laser continuous welding or laser intermittent spot welding. If laser continuous welding is used, controlling the travel speed of the laser is critical to the welding effect. If laser intermittent spot welding is used, the residence time at the single spot welding location will determine the heat input to the welding process. If the residence time is too long, the heat input amount is too large, which may cause the battery to be broken. If the residence time is too short, the heat input amount is too small and the welding strength is insufficient.
- the assembly can be directly subjected to hot press packaging according to the design structure of the assembly.
- the upper laminate can be replaced with a backsheet of a crystalline silicon solar module, such as a TPT backsheet, and then the assembly is thermocompression encapsulated.
- the crystalline silicon solar cell 410 may be a back electrode battery, that is, the positive and negative electrodes of the crystalline silicon solar cell 410 are not distributed in the crystalline silicon solar cell.
- the 410 is backed on both sides, but concentrated on the back of the crystalline silicon solar cell 410.
- the advantage of the back electrode battery is that there is no shadow loss caused by the front electrode.
- a preferred underpress layer is a lower layer formed by stacking a rigid sheet of rigid material 110 and a sheet of elastic material solid 210.
- a further preferred underlayer consists of the material from which the crystalline silicon solar cell module is to be fabricated.
- the rigid sheet of rigid material 110 is the panel glass of the assembly
- the sheet of elastic material 210 is the packaging material for the crystalline silicon solar module, such as polyethylene vinyl acetate (EVA) and polyvinyl butyral (PVB).
- the crystalline silicon solar cell 410 and the conductive ribbon 310 on which the crystalline silicon solar cell module is prepared are placed one by one on the elastic material solid sheet 210.
- the placement method may be first placing the crystalline silicon solar cell 410 on the elastic material solid sheet 210. Then, the conductive ribbon 310 is placed, and then the crystalline silicon solar cell 410 and the conductive ribbon 310 are repeatedly placed until the crystalline silicon solar cell 410 and the corresponding conductive ribbon 310 are placed on the elastic material solid sheet 210.
- a simpler method of placing the crystalline silicon solar cell 410 and the conductive ribbon 310 is to first place all of the crystalline silicon solar cells 410 of one solar cell module on the elastic material solid sheet 210, and then place all of the conductive ribbons 310. On the electrodes of the crystalline silicon solar cell 410.
- the preferred upper laminate of the present invention is an elastomeric solid sheet 220 of a packaging material of a crystalline silicon solar cell module, such as polyethylene vinyl acetate (EVA) and polyvinyl butyral (PVB), and a rigid sheet of rigid material. 120 superimposed upper layer.
- the optimized rigid material solid sheet 120 of the present invention may be glass or other transparent polymer plastic.
- the step of laser welding the conductive strip 310 and the crystalline silicon solar cell 410 of the present invention may be carried out.
- this embodiment uses a sealing frame 810.
- the sealing frame 810 and the table 800, and the seal between the sealing frame 810 and the rigid material solid sheet 120 are realized by the sealing ring 820.
- the absolute gas pressure inside the sealing frame is In other words, the absolute gas pressure between the upper and lower pressure layers is smaller than the atmospheric pressure on the outer side.
- the rigid material solid sheet 120 is uniformly pressed by the elastic material solid sheet 220 to all the conductive strips 310 under the elastic material solid sheet 220 to make all the conductive strips under the elastic material solid sheet 220.
- 310 can be attached to the electrodes of the crystalline silicon solar cell 410 at the same time.
- the true underlayer of the present invention includes a table 800, a rigid sheet of rigid material 110 and a sheet of elastic material solid 210.
- the upper layer may be directly used.
- the layer of elastic material solid sheet 220, or a layer of rigid material solid sheet 120 may be directly used as the upper layer.
- the conductive ribbon 310 is in close contact with the electrode of the crystalline silicon solar cell 410, the thermal energy converted by the conductive ribbon 310 after receiving the laser energy during the laser welding process is ensured. It can be quickly transferred to the electrode of the contacted crystalline silicon solar cell 410, and the molten low-temperature molten alloy outside the conductive ribbon 310 wets the electrode of the crystalline silicon solar cell 410 and solidifies on the electrode of the solar cell 410, effectively The laser welding joining step of the present invention is completed.
- the laser welding coupling method is to perform the laser welding joining step of the present invention using the upper laser 620.
- all the needs of the components can be completed by moving the laser 620 Welding of the points to be welded. It is also possible to carry out the welding of all the parts of the assembly that need to be welded by means of moving the work surface 800. Alternatively, the welding of all points that need to be welded is accomplished simultaneously, or by separately moving the laser 620 and the work surface 800.
- the advantage of using the simultaneous or separate movement of the laser 620 and the work surface 800 is that the range of movement of the laser and the work surface can be reduced, which not only reduces the cost of the laser welding equipment, but also improves the movement accuracy of the laser and the work surface.
- the assembly can be directly subjected to hot press packaging according to the design structure of the assembly.
- the rigid sheet of rigid material 120 may be replaced with other backsheets of design, such as a TPT backsheet, etc., and then the assembly is thermocompression encapsulated.
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US14/894,057 US9559248B2 (en) | 2013-05-26 | 2014-05-14 | Laser soldering systems and methods for joining crystalline silicon solar batteries |
EP14804597.4A EP2993708B1 (en) | 2013-05-26 | 2014-05-14 | Laser welding method for connecting crystalline silicon solar cells |
JP2016513217A JP6410801B2 (ja) | 2013-05-26 | 2014-05-14 | 結晶シリコン太陽電池のレーザー溶接連結方法 |
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CN201310198021.4A CN104183666B (zh) | 2013-05-26 | 2013-05-26 | 一种激光焊接联接晶体硅太阳能电池的方法 |
CN201310198021.4 | 2013-05-26 |
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US (1) | US9559248B2 (zh) |
EP (1) | EP2993708B1 (zh) |
JP (1) | JP6410801B2 (zh) |
CN (1) | CN104183666B (zh) |
WO (1) | WO2014190854A1 (zh) |
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CN104485394A (zh) * | 2014-12-31 | 2015-04-01 | 苏州格林电子设备有限公司 | 太阳能电池汇流条焊接生产线 |
US9559248B2 (en) | 2013-05-26 | 2017-01-31 | Sharesun Co., Ltd. | Laser soldering systems and methods for joining crystalline silicon solar batteries |
US11114581B2 (en) * | 2014-11-19 | 2021-09-07 | Sharesun Co., Ltd. | Method for producing solar cell module |
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JP2021521633A (ja) * | 2018-04-06 | 2021-08-26 | サンパワー コーポレイション | 太陽電池ストリングのレーザー支援メタライゼーションプロセス |
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CN115172494A (zh) * | 2022-07-01 | 2022-10-11 | 浙江爱旭太阳能科技有限公司 | 一种ibc电池组件封装工艺及ibc电池组件 |
CN114833504B (zh) * | 2022-07-05 | 2022-11-25 | 江苏小牛自动化设备有限公司 | 一种电池串制备方法及电池串焊接设备 |
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US9559248B2 (en) | 2017-01-31 |
JP2016524323A (ja) | 2016-08-12 |
CN104183666B (zh) | 2017-06-16 |
EP2993708A4 (en) | 2016-04-27 |
EP2993708A1 (en) | 2016-03-09 |
US20160118530A1 (en) | 2016-04-28 |
CN104183666A (zh) | 2014-12-03 |
EP2993708B1 (en) | 2018-10-10 |
JP6410801B2 (ja) | 2018-10-24 |
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