JP2016524323A - 結晶シリコン太陽電池のレーザー溶接連結方法 - Google Patents
結晶シリコン太陽電池のレーザー溶接連結方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
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Abstract
Description
Claims (15)
- 結晶シリコン太陽電池のレーザー溶接連結方法であって、結晶シリコン太陽電池のレーザー溶接連結方法は上下の加圧層の間の気体絶対圧力が大気圧より小さくさせ、大気圧の圧力によって、上下の加圧層の作用で、上下の加圧層の間の導電はんだリボンを同様に上下の加圧層の間にある結晶シリコン太陽電池の電極に均一に密着させ、レーザー溶接技術を使用して導電はんだリボンと結晶シリコン太陽電池とを溶接し、それは、
1)、加圧層を放置するステップと、
2)、導電はんだリボン及び結晶シリコン太陽電池を1つずつ下加圧層に放置し、かつ導電はんだリボンを溶接される必要である結晶シリコン太陽電池の電極に位置合わせし、或いは溶接される必要であるそのほかの導電はんだリボンに位置合わせするステップと、
3)、導電はんだリボンと結晶シリコン太陽電池に上加圧層を放置するステップと、
4)、上下の加圧層の間に真空化するステップと、
5)、レーザー溶接するステップと、を含むことを特徴とする結晶シリコン太陽電池のレーザー溶接連結方法。 - 前記下加圧層または上加圧層は一層の固体薄板、又は複数層の固体薄板が積層してなる下加圧層又は上加圧層であることを特徴とする請求項1に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記下加圧層及び上加圧層の固体薄板の材料及び固体薄板の層数が同じであり、或いは異なることを特徴とする請求項2に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記下加圧層及び上加圧層において、少なくとも一層の固体薄板の材料は剛性材料であることを特徴とする請求項3に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記下加圧層及び上加圧層において、少なくとも一層の固体薄板の材料は弾性材料であることを特徴とする請求項3に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記下加圧層及び上加圧層において、少なくとも1つの加圧層はレーザーを透過可能なものであることを特徴とする請求項1、2、3、4又は5に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記下加圧層又は上加圧層は結晶シリコン太陽電池モジュールのパッケージ材料が積層してなり、或いは下加圧層及び上加圧層が共に結晶シリコン太陽電池モジュールのパッケージ材料が積層してなることを特徴とする請求項1、2、3、4又は5に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 導電はんだリボン及び結晶シリコン太陽電池を1つずつ下加圧層に放置するのは結晶シリコン太陽電池の数が少なくとも1つであることを意味することを特徴とする請求項1に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 導電はんだリボン及び結晶シリコン太陽電池を1つずつ下加圧層に放置するのは1つの結晶シリコン太陽電池モジュールが必要であるすべての結晶シリコン太陽電池と対応した導電はんだリボンとを順次に全部下加圧層に放置することを特徴とする請求項8に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記真空化は上加圧層と下加圧層との間の絶対気体圧力が大気圧より小さくすることを特徴とする請求項1に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記レーザー溶接はレーザーが加圧層を通過して導電はんだリボンと結晶シリコン太陽電池の電極との溶接を実施することを特徴とする請求項6に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記レーザー溶接はレーザーが加圧層を透過して結晶シリコン太陽電池の正電極に密着された導電はんだリボン、又は負電極に密着された導電はんだリボンに照射し、該結晶シリコン太陽電池の正電極又は負電極に対してレーザー溶接を実施することを特徴とする請求項1、2、8、9、10又は11に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記レーザー溶接はレーザーが加圧層を透過して結晶シリコン太陽電池の正電極に密着された導電はんだリボン、又は負電極に密着された導電はんだリボンに照射し、かつ該結晶シリコン太陽電池の正電極及び負電極に対してレーザー溶接を実施することを特徴とする請求項1、2、8、9、10又は11に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記レーザー溶接はレーザーが加圧層を透過してそれぞれ結晶シリコン太陽電池の正電極に密着された導電はんだリボン及び負電極に密着された導電はんだリボンに照射し、かつ該結晶シリコン太陽電池の正電極及び負電極に対してレーザー溶接を実施することを特徴とする請求項1、2、8、9、10又は11に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
- 前記レーザー溶接は導電はんだリボンが結晶シリコン太陽電池の電極に均一に密着されることを保持する条件で、一部或いは全部の該結晶シリコン太陽電池モジュールにおける結晶シリコン太陽電池の連結を完成することを特徴とする請求項1、2、8、9、10或11に記載の結晶シリコン太陽電池のレーザー溶接連結方法。
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PCT/CN2014/077421 WO2014190854A1 (zh) | 2013-05-26 | 2014-05-14 | 一种激光焊接联接晶体硅太阳能电池的方法 |
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JP2021521633A (ja) * | 2018-04-06 | 2021-08-26 | サンパワー コーポレイション | 太陽電池ストリングのレーザー支援メタライゼーションプロセス |
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CN105609584B (zh) * | 2014-11-19 | 2023-10-24 | 苏州易益新能源科技有限公司 | 一种太阳能电池组件生产方法 |
CN104485394B (zh) * | 2014-12-31 | 2016-06-29 | 苏州格林电子设备有限公司 | 太阳能电池汇流条焊接生产线 |
CN104439799B (zh) * | 2014-12-31 | 2016-04-13 | 苏州格林电子设备有限公司 | 一种太阳能电池汇流条焊接生产线 |
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CN113843502A (zh) * | 2020-06-28 | 2021-12-28 | 武汉帝尔激光科技股份有限公司 | 一种太阳能电池组件激光焊接设备及其焊接方法 |
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US11527611B2 (en) | 2020-11-09 | 2022-12-13 | The Aerospace Corporation | Method of forming nanowire connects on (photovoltiac) PV cells |
CN114447155B (zh) * | 2022-01-27 | 2024-04-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 柔性太阳能电池及半导体器件的栅电极的制作方法 |
CN115172494A (zh) * | 2022-07-01 | 2022-10-11 | 浙江爱旭太阳能科技有限公司 | 一种ibc电池组件封装工艺及ibc电池组件 |
CN114833504B (zh) * | 2022-07-05 | 2022-11-25 | 江苏小牛自动化设备有限公司 | 一种电池串制备方法及电池串焊接设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS604270A (ja) * | 1983-06-22 | 1985-01-10 | Hitachi Ltd | 太陽電池の製造方法 |
WO2011105510A1 (ja) * | 2010-02-24 | 2011-09-01 | 京セラ株式会社 | 太陽電池モジュールおよびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN104183666B (zh) | 2017-06-16 |
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US20160118530A1 (en) | 2016-04-28 |
CN104183666A (zh) | 2014-12-03 |
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WO2014190854A1 (zh) | 2014-12-04 |
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