CN112038424A - 一种异质结电池及其制备方法和组件 - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 239000004831 Hot glue Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229920001038 ethylene copolymer Polymers 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009432 framing Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开了一种异质结电池及其制备方法和组件,该异质结电池包括衬底、第一本征非晶硅层和N型掺杂非晶硅层、第二本征非晶硅层和P型掺杂非晶硅层、第一透明导电氧化物层和第二透明导电氧化物层、介电薄膜和金属网;其中,金属网由若干互相垂直的第一金属丝和第二金属丝组成,金属网的一面涂覆有粘结材料。采用金属丝组成的金属网代替使用低温银浆印刷金属栅线,无需使用银浆,极大降低生产成本。本异质结电池的制备方法可以降低第一透明导电氧化物层和第二透明导电氧化物层的沉积厚度,当第一透明导电氧化物层和第二透明导电氧化物层选用ITO材质时,可以降低ITO的用量,降低了成本,同时形成了ITO/介电薄膜叠层减反射结构,能降低反射,提高电池转换效率。
Description
技术领域
本发明涉及太阳能电池技术领域,具体涉及一种异质结电池及其制备方法和组件。
背景技术
从现阶段来看,影响异质结技术发展的主要问题及成因涵盖以下四个方面:1)技术稳定性并未达到大范围推广的程度,成本仍然较高;2)设备价格昂贵;3)异质结太阳能电池一般采用树脂型低温固化银浆作为金属电极,电阻率高,导电性差,为了提高导电性,需要提高金属电极的宽度或者高度,导致电池的银浆耗量增加,5BB主栅结构的异质结电池银浆耗量在300mg左右,高于市场主流的PERC电池200mg以上。即使采用最新的多主栅技术,银浆耗量仍然在150mg以上。导致异质结电池成本偏高,几乎占到了电池非硅生产成本的一半以上;4)透明导电薄膜ITO的In属于稀有金属,地壳含量稀少,因此导致溅射ITO所用的靶材价格昂贵。5)组件成本偏高。由于异质结电池的生长温度在200度以下,因此制备组件时不能采用常规的焊带和串焊机,需要使用低温焊带和低温串焊机,价格偏高,进一步增加了异质结电池的生产成本。
其中3)低温银浆的成本几乎占到了电池非硅成本的一半以上,一方面是由于目前低温银浆市场基本被日本京都电子垄断,国内厂商目前仍处于起步阶段,导致低温银浆的价格几乎是常规PERC使用的高温银浆的两倍。另一方面,也是最主要的,在于异质结电池的银浆使用量上也远高于常规PERC电池。其次是4)ITO的用量,解决方法在于尽可能的降低ITO薄膜的厚度,以降低靶材的耗量。
发明内容
为了克服现有技术的不足,本发明的目的之一在于提供一种异质结电池,该异质结电池无需使用低温银浆作为金属电极,降低了生产成本;本发明的目的之二在于提供一种异质结电池的制备方法,可以降低ITO材料和ITO层的厚度,降低成本的同时,还能提高异质结电池的减反射效果,提高电池的效率。本发明的目的之三在于提供一种异质结电池组件制备方法,常规组件制备流程是焊带焊接电池正负极,串联,层压,装框。但本发明不需要焊带,不需要焊接,只采用具有粘结性的导电材料粘在电池的首尾两端,将电池的正负极相连,形成串联,再进行层压,装框即可。
本发明的目的之一采用如下技术方案实现:
一种异质结电池,衬底的一面从内到外依次生长有第一本征非晶硅层和N型掺杂非晶硅层,衬底的另一面从内到外依次生长有第二本征非晶硅层和P型掺杂非晶硅层;N型掺杂非晶硅层上沉积第一透明导电氧化物层,P型掺杂非晶硅层上沉积第二透明导电氧化物层;第一透明导电氧化物层的一面和第二透明导电氧化物层的一面各与金属网固定;第一透明导电氧化物层和第二透明导电氧化物层上均沉积有介电薄膜;其中,金属网由若干互相垂直的第一金属丝和第二金属丝组成。
进一步,所述第一金属丝和第二金属丝的材质为铜、银、金、锡和铝中的一种或几种。第一金属丝和第二金属丝可以选用相同或不同的材质。
再进一步,所述第一金属丝的直径大于或等于第二金属丝的直径;单根第一金属丝和单根第二金属丝的尺寸范围均为0.1mm~10mm。
进一步,所述第一金属丝和第二金属丝的形状为长方体、正方体、圆柱形和三角形中的一种。优选形状为三角形,优选为三角形的金属丝,三角形的金属丝与透明导电氧化物层的接触面积大,能增加光的漫反射效果。
进一步,所述金属网的一面涂覆有粘结材料,第一透明导电氧化物层的一面和第二透明导电氧化物层的一面各与金属网涂覆有粘结材料的一面固定。
再进一步,所述粘结材料选用导电胶、高温易挥发的有机材料和含有Ag颗粒的纳米材料中的一种或几种。其中,所述高温易挥发的有机材料为聚乙烯及乙烯共聚物热熔胶。
进一步,所述第一透明导电氧化物层和第二透明导电氧化物层选用ITO薄膜、IWO薄膜、AZO薄膜、FTO薄膜、In2O3:ZnO薄膜和SnO2薄膜中的一种或几种。优选地,选用ITO薄膜。
再进一步,所述第一本征非晶硅层的厚度为1~10nm;N型掺杂非晶硅层的厚度为1~30nm;所述第二本征非晶硅层的厚度为1~10nm;P型掺杂非晶硅层的厚度为1~30nm。
进一步,所述介电薄膜SiN薄膜、SiOx、AlOx、MgF2和TiO2中的一种或者几种。
本发明的目的之二采用如下技术方案实现:
异质结电池的制备方法,包括以下步骤:
1)利用碱性试剂对衬底进行制绒处理,得到制绒衬底;其中,碱性试剂为NaOH,KOH等碱性溶液;衬底可选用N型或P型的硅衬底。
2)利用等离子体增强化学气相沉积(PECVD)设备在制绒衬底的一面生长第一本征非晶硅层和N型掺杂非晶硅层,生长温度为100~250℃;接着在制绒衬底的另一面生长第二本征非晶硅层和P型掺杂非晶硅层,生长温度为100~250℃;
3)在N型掺杂非晶硅层沉积第一透明导电氧化物层,在P型掺杂非晶硅层沉积第二透明导电氧化物层,第一透明导电氧化物层和第二透明导电氧化物层的生长温度均为25~250℃;其中,采用磁控溅射、反应等离子体沉积、电子束蒸发中的一种沉积方法来沉积第一透明导电氧化物层和第二透明导电氧化物层;
4)分别在第一透明导电氧化物层和第二透明导电氧化物层上固定金属网;
5)分别在第一和第二透明导电氧化物层上沉积介电薄膜,生长温度25~250℃,优选为100~250℃,该步骤相当于对金属网和第一透明导电氧化物层的接触部分以及金属网和第二透明导电氧化物层的接触部分进行了一个退火过程,一方面使得透明导电氧化物层的表面掺杂浓度增加,另一方面一定的退火温度使得金属和透明导电氧化物层之间的结合力增加,促进形成一个良好的接触。最终得到异质结电池;其中,采用等离子体增强化学气相沉积法(PECVD)和/或原子层沉积法(ALD)来沉积介电薄膜。
当第一透明导电氧化物层和第二透明导电氧化物层选用ITO时,介电薄膜选用SiN薄膜时,在金属网区域外形成ITO/SiN的叠层减反射结构,根据薄膜的干涉相消原理,光从低折射率的介质垂直进入到高折射率介质时,会发生干涉相消现象,反射光相消,透射光增强,即所谓的增透现象。ITO的折射率n在2以上,很难做到低折射率1.9以下。而SiN薄膜的折射率可以做到2以下,ITO/SiN的叠层结构可以实现低折射率到高折射率的搭配,从而降低反射,让更多的光进入到电池中,提高电池的电流密度,从而提高异质结电池效率
本发明的目的之三采用如下技术方案实现:
一种异质结电池组件,通过上述方法制备得到异质结电池后,对异质结电池的电性能测试分选,优选采用无主栅电池所用到的丝线方法进行测试分选,丝线方法是采用铜测试台,铜台两边装有多条金属丝线,代替传统的探针排,通常用来测试没有主栅的电池。再选取至少两个同档位的电池,采用具有粘结性的导电材料粘结在所述异质结电池的首尾两端,将相邻两个所述异质结电池的正负极(即金属网)相连,得到异质结电池组件。
其中,其中粘结性的导电材料可以是导电胶带,导电胶,含有Ag颗粒的纳米材料等。
相比现有技术,本发明的有益效果在于:
(1)本发明的异质结电池采用金属丝组成的金属网代替使用低温银浆印刷金属栅线,无需使用银浆,极大降低生产成本。
(2)异质结电池的制备方法可以降低第一透明导电氧化物层和第二透明导电氧化物层的沉积厚度,当第一透明导电氧化物层和第二透明导电氧化物层选用ITO材质时,可以降低ITO的用量,降低了成本,同时形成了ITO/介电薄膜叠层减反射结构,降低入射光的反射,让更多的光进入到电池中,提高电池的电流密度,提高电池转换效率。
(3)异质结电池组件的制备方法,无需焊接和焊带,只需要采用具有粘结性的导电材料粘在电池的首尾两端,将电池的正负极相连,形成串联,再进行层压,装框即可。极大地简化了组件的制备流程,大大的降低了制备成本。同时还省掉了丝网印刷、烧结炉等设备,进一步降低设备成本。工序的减少也降低了生产控制的难度,提高了产品合格率。
附图说明
图1为异质结电池的截面图;
图2为异质结电池的俯视图;
图3为异质结电池组件的结构示意图。
图中:1、衬底;2、第一本征非晶硅层;3、N型掺杂非晶硅层;4、第二本征非晶硅层;5、P型掺杂非晶硅层;6、第一透明导电氧化物层;7、第二透明导电氧化物层;8金属网;81、第一金属丝;82、第二金属丝;9、介电薄膜;10、异质结电池;11、导电材料;12、边框。
具体实施方式
下面,结合附图以及具体实施方式,对本发明做进一步描述,需要说明的是,在不相冲突的前提下,以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。
一种异质结电池,如图1~2所示,衬底1的一面从内到外依次生长有第一本征非晶硅层2和N型掺杂非晶硅层3,衬底1的另一面从内到外依次生长有第二本征非晶硅层4和P型掺杂非晶硅层5;N型掺杂非晶硅层3上沉积第一透明导电氧化物层6,P型掺杂非晶硅层5上沉积第二透明导电氧化物层7;第一透明导电氧化物层6的一面和第二透明导电氧化物层7的一面各与金属网8固定;第一透明导电氧化物层6和第二透明导电氧化物层7上均沉积有介电薄膜9;其中,金属网8由若干互相垂直的第一金属丝81和第二金属丝82组成。
进一步,所述第一金属丝81和第二金属丝82的材质为铜、银、金、锡和铝中的一种或几种。第一金属丝和第二金属丝可以选用相同或不同的材质。
再进一步,所述第一金属丝81的直径大于或等于第二金属丝82的直径;单根第一金属丝81和单根第二金属丝82的尺寸范围均为0.1mm~10mm。
进一步,所述第一金属丝81和第二金属丝82的形状为长方体、正方体、圆柱形和三角形中的一种。优选形状为三角形,优选为三角形的金属丝,三角形的金属丝与透明导电氧化物层的接触面积大,能增加光的漫反射效果。
进一步,所述金属网8的一面涂覆有粘结材料,第一透明导电氧化物层6的一面和第二透明导电氧化物层7的一面各与金属网8涂覆有粘结材料的一面固定。
再进一步,所述粘结材料选用导电胶、高温易挥发的有机材料和含有Ag颗粒的纳米材料中的一种或几种。其中,所述高温易挥发的有机材料为聚乙烯及乙烯共聚物热熔胶。
进一步,所述第一透明导电氧化物层6和第二透明导电氧化物层7选用ITO薄膜、IWO薄膜、AZO薄膜、FTO薄膜、In2O3:ZnO薄膜和SnO2薄膜中的一种或几种。优选地,选用ITO薄膜。
再进一步,所述第一本征非晶硅层2的厚度为1~10nm;N型掺杂非晶硅层3的厚度为1~30nm;所述第二本征非晶硅层4的厚度为1~10nm;P型掺杂非晶硅层的厚度为1~30nm。
实施例1
异质结电池组件的制备方法,包括以下步骤:
1)利用NaOH溶液对衬底1进行制绒处理,得到制绒衬底;其中,衬底1可选用N型的硅衬底1。
2)利用PECVD设备在制绒衬底1的一面生长第一本征非晶硅层2和N型掺杂非晶硅层3,生长温度为200℃;接着在制绒衬底1的另一面生长第二本征非晶硅层4和P型掺杂非晶硅层5,生长温度为200℃;
3)在N型掺杂非晶硅层3沉积第一透明导电氧化物层6,在P型掺杂非晶硅层5沉积第二透明导电氧化物层7,第一透明导电氧化物层6和第二透明导电氧化物层7的生长温度均为100℃;其中,采用反应等离子体沉积的方法来沉积第一透明导电氧化物层6和第二透明导电氧化物层7;
4)分别在第一透明导电氧化物层6和第二透明导电氧化物层7上固定金属网8,
5)分别在第一透明导电氧化物层6和第二透明导电氧化物层7上沉积介电薄膜9,生长温度为200℃,得到异质结电池10;其中,第一透明导电氧化物层6和第二透明导电氧化物层7选用ITO薄膜,介电薄膜9选用SiN薄膜,在金属网8区域外形成ITO/SiN的叠层减反射结构;其中,采用等离子体增强化学气相沉积法(PECVD)来沉积介电薄膜9。
6)对异质结电池10的电性能测试分选,采用无主栅电池所用到的丝线方法进行测试分选,再选取12个同档位(相同效率)的异质结电池10,采用具有粘结性的导电材料11粘结在所述异质结电池10的首尾两端,将相邻两个所述异质结电池10的正负极(即金属网8)相连,形成串联,进行排版,附上EVA膜后,再进行层压,打胶,装上边框13,得到如图3所示的异质结电池10的组件。
其中,其中粘结性的导电材料11为导电胶带。
实施例2
异质结电池组件的制备方法,包括以下步骤:
1)利用NaOH溶液对衬底1进行制绒处理,得到制绒衬底;其中,衬底1可选用N型的硅衬底1。
2)利用PECVD设备在制绒衬底1的一面生长第一本征非晶硅层2和N型掺杂非晶硅层3,生长温度为100℃;接着在制绒衬底1的另一面生长第二本征非晶硅层4和P型掺杂非晶硅层5,生长温度为100℃;
3)在N型掺杂非晶硅层3沉积第一透明导电氧化物层6,在P型掺杂非晶硅层5沉积第二透明导电氧化物层7,第一透明导电氧化物层6和第二透明导电氧化物层7的生长温度均为25℃;其中,采用电子束蒸发中的方法来沉积第一透明导电氧化物层6和第二透明导电氧化物层7;
4)分别在第一透明导电氧化物层6和第二透明导电氧化物层7上固定金属网8;
5)分别在第一透明导电氧化物层6和第二透明导电氧化物层7上沉积介电薄膜9,生长温度为100~250℃,得到异质结电池10;其中,第一透明导电氧化物层6和第二透明导电氧化物层7选用ITO薄膜,介电薄膜9选用TiO2薄膜,在金属网区域外形成ITO/TiO2的叠层减反射结构;其中,采用等离子体增强化学气相沉积法(PECVD)和/或原子层沉积法(ALD)来沉积介电薄膜。
6)对异质结电池10的电性能测试分选,采用无主栅电池所用到的丝线方法进行测试分选,再选取12个同档位的异质结电池10,采用具有粘结性的导电材料11粘结在所述异质结电池10的首尾两端,将相邻两个所述异质结电池10的正负极(即金属网8)相连,形成串联,进行排版,附上EVA膜后,再进行层压,打胶,装上边框12,得到如图3所示的异质结电池10的组件。
其中,其中粘结性的导电材料11为纳米银胶体。
上述实施方式仅为本发明的优选实施方式,不能以此来限定本发明保护的范围,本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。
Claims (14)
1.一种异质结电池,其特征在于,衬底的一面从内到外依次生长有第一本征非晶硅层和N型掺杂非晶硅层,衬底的另一面从内到外依次生长有第二本征非晶硅层和P型掺杂非晶硅层;N型掺杂非晶硅层上沉积第一透明导电氧化物层,P型掺杂非晶硅层上沉积第二透明导电氧化物层;第一透明导电氧化物层的一面和第二透明导电氧化物层的一面各与金属网固定;第一透明导电氧化物层和第二透明导电氧化物层上均沉积有介电薄膜;其中,金属网由若干互相垂直的第一金属丝和第二金属丝组成。
2.如权利要求1所述的异质结电池,其特征在于,所述第一金属丝和第二金属丝的材质为铜、银、金、锡和铝中的一种或几种。
3.如权利要求1所述的异质结电池,其特征在于,所述第一金属丝的直径大于或等于第二金属丝的直径;单根第一金属丝和单根第二金属丝的尺寸范围均为0.1mm~10mm。
4.如权利要求1所述的异质结电池,其特征在于,所述第一金属丝和第二金属丝的截面形状为长方体、正方体、圆柱形和三角形中的一种。
5.如权利要求1所述的异质结电池,其特征在于,所述金属网的一面涂覆有粘结材料,第一透明导电氧化物层的一面和第二透明导电氧化物层的一面各与金属网涂覆有粘结材料的一面固定。
6.如权利要求5所述的异质结电池,其特征在于,所述粘结材料选用导电胶、高温易挥发的有机材料或者含有Ag颗粒的纳米材料中的一种或几种。
7.如权利要求6所述的异质结电池,其特征在于,所述高温易挥发的有机材料为聚乙烯及乙烯共聚物热熔胶。
8.如权利要求1所述的异质结电池,其特征在于,所述第一透明导电氧化物层和第二透明导电氧化物层选用ITO薄膜、IWO薄膜、AZO薄膜、FTO薄膜、In2O3:ZnO薄膜或者SnO2薄膜中的一种或几种。
9.如权利要求1所述的异质结电池,其特征在于,所述第一本征非晶硅层的厚度为1~10nm;N型掺杂非晶硅层的厚度为1~30nm;所述第二本征非晶硅层的厚度为1~10nm;P型掺杂非晶硅层的厚度为1~30nm。
10.如权利要求1所述的异质结电池,其特征在于,所述介电薄膜为SiN薄膜、SiOx、AlOx、MgF2和TiO2中的一种或者几种。
11.如权利要求1~10任一所述的异质结电池的制备方法,其特征在于,包括以下步骤:
1)对衬底进行制绒处理,得到制绒衬底;
2)在制绒衬底的一面生长第一本征非晶硅层和N型掺杂非晶硅层,生长温度为100~250℃;接着在制绒衬底的另一面生长第二本征非晶硅层和P型掺杂非晶硅层,生长温度为100~250℃;
3)在N型掺杂非晶硅层沉积第一透明导电氧化物层,在P型掺杂非晶硅层沉积第二透明导电氧化物层,第一透明导电氧化物层和第二透明导电氧化物层的生长温度均为25~250℃;
4)分别在第一透明导电氧化物层和第二透明导电氧化物层上固定金属网;
5)分别在第一透明导电氧化物层和第二透明导电氧化物层上沉积介电薄膜,生长温度25~250℃,得到异质结电池。
12.如权利要求11所述的异质结电池的制备方法,其特征在于,步骤3)中,采用磁控溅射、反应等离子体沉积、电子束蒸发中的一种沉积方法来沉积第一透明导电氧化物层和第二透明导电氧化物层。
13.如权利要求11所述的异质结电池的制备方法,步骤5)中,所述介电薄膜的厚度为1~70nm。
14.一种异质结电池组件,其特征在于,通过权利要求10~12任一所述的方法制备得到异质结电池后,选取至少两个同档位同效率的异质结电池,采用具有粘结性的导电材料粘结在所述异质结电池的首尾两端,将相邻两个所述异质结电池的正负极相连,得到异质结电池组件。
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CN202011053423.1A CN112038424A (zh) | 2020-09-29 | 2020-09-29 | 一种异质结电池及其制备方法和组件 |
AU2021354681A AU2021354681B2 (en) | 2020-09-29 | 2021-07-28 | Heterojunction battery, preparation method therefor, and application thereof |
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PCT/CN2021/108942 WO2022068350A1 (zh) | 2020-09-29 | 2021-07-28 | 异质结电池及其制备方法和应用 |
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US9202959B2 (en) * | 2012-09-25 | 2015-12-01 | International Business Machines Corporation | Embedded junction in hetero-structured back-surface field for photovoltaic devices |
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-
2020
- 2020-09-29 CN CN202011053423.1A patent/CN112038424A/zh active Pending
-
2021
- 2021-07-28 AU AU2021354681A patent/AU2021354681B2/en active Active
- 2021-07-28 EP EP21874012.4A patent/EP4207312A4/en active Pending
- 2021-07-28 WO PCT/CN2021/108942 patent/WO2022068350A1/zh unknown
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Also Published As
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