WO2024004024A1 - Module d'alimentation et dispositif de conversion de puissance - Google Patents

Module d'alimentation et dispositif de conversion de puissance Download PDF

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Publication number
WO2024004024A1
WO2024004024A1 PCT/JP2022/025730 JP2022025730W WO2024004024A1 WO 2024004024 A1 WO2024004024 A1 WO 2024004024A1 JP 2022025730 W JP2022025730 W JP 2022025730W WO 2024004024 A1 WO2024004024 A1 WO 2024004024A1
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WIPO (PCT)
Prior art keywords
semiconductor element
power module
conductor
power
hole
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PCT/JP2022/025730
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English (en)
Japanese (ja)
Inventor
悠策 伊藤
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2022/025730 priority Critical patent/WO2024004024A1/fr
Priority to JP2022575431A priority patent/JP7334369B1/ja
Publication of WO2024004024A1 publication Critical patent/WO2024004024A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure relates to a power module and a power conversion device.
  • Patent Document 1 Japanese Patent Laid-Open No. 6-104355
  • Patent Document 1 describes a semiconductor device.
  • the semiconductor device described in Patent Document 1 includes a lead frame, a semiconductor chip, a cooling module, and a mold resin.
  • a semiconductor chip is placed on a lead frame.
  • the cooling module is placed above the semiconductor chip.
  • a liquid is sealed inside the cooling module.
  • the lead frame, semiconductor chip, and cooling module are sealed with mold resin.
  • the semiconductor device described in Patent Document 1 has improved cooling efficiency using a cooling module.
  • the present disclosure has been made in view of the problems of the prior art as described above. More specifically, the present disclosure provides a power module that can reduce the current density in the current path from the semiconductor element while suppressing the generation of thermal stress around the semiconductor element.
  • the power module of the present disclosure includes a circuit board, a first semiconductor element, a conductor block, and a conductor.
  • the first semiconductor element is arranged on the circuit board.
  • the conductor block has an upper end and a lower end.
  • the conductor block is arranged on the first semiconductor element such that the lower end thereof is electrically connected to the first semiconductor element.
  • a liquid is sealed inside the conductor block. The conductor electrically connects the circuit board and the top end.
  • the power module of the present disclosure it is possible to reduce the current density in the current path from the semiconductor element while suppressing the generation of thermal stress around the semiconductor element.
  • FIG. 2 is a partially enlarged sectional view of the power module 100A. It is a process diagram which shows the manufacturing method of 100 A of power modules.
  • FIG. 3 is a partially enlarged sectional view of power module 100B.
  • FIG. 7 is a partially enlarged sectional view of a power module 100B according to a modification.
  • FIG. 3 is a partially enlarged sectional view of the power module 100C. It is a partially enlarged cross-sectional view of a power module 100C according to a modification.
  • FIG. 7 is a partially enlarged sectional view of a power module 100D according to a modification.
  • 2 is a block diagram showing the configuration of a power conversion system 200.
  • Embodiment 1 A power module according to Embodiment 1 will be described.
  • the power module according to the first embodiment is referred to as a power module 100A.
  • FIG. 1 is a cross-sectional view of the power module 100A.
  • FIG. 2 is a partially enlarged sectional view of the power module 100A.
  • the power module 100A includes a circuit board 10, a plurality of semiconductor elements 20, a conductor 30, a wire 31, a plurality of conductor blocks 40, a base plate 50, and a case 51. and a sealing material 52.
  • the circuit board 10 has an insulating layer 11, a conductor pattern 12, and a conductor pattern 13.
  • Insulating layer 11 has an upper surface 11a and a lower surface 11b.
  • the upper surface 11a and the lower surface 11b are end surfaces of the insulating layer 11 in the thickness direction.
  • the lower surface 11b is the opposite surface to the upper surface 11a.
  • the insulating layer 11 is made of an electrically insulating material.
  • the insulating layer 11 is made of, for example, alumina (Al 2 O 3 ), aluminum nitride (AlN), or the like.
  • the conductor pattern 12 is arranged on the upper surface 11a.
  • the conductor pattern 13 is arranged on the lower surface 11b.
  • the conductor pattern 12 and the conductor pattern 13 are made of a conductive material.
  • the conductor pattern 12 is made of copper (Cu), for example.
  • the conductor pattern 12 and the conductor pattern 13 may be composed of multiple layers.
  • the conductor pattern 12 and the conductor pattern 13 may be composed of an aluminum (Al) layer on the insulating layer 11 side and a copper layer disposed on the aluminum layer.
  • the semiconductor element 20 is a power semiconductor element.
  • the semiconductor element 20 is, for example, an IGBT (Insulated Gate Bipolar Transistor). However, the semiconductor element 20 is not limited to this.
  • the semiconductor element 20 may be a MOSFET (Metal Oxide Field Effect Transistor).
  • the semiconductor element 20 may be a Schottky barrier diode.
  • the semiconductor element 20 is formed using, for example, a silicon (Si) substrate.
  • the semiconductor element 20 may be formed using a substrate made of a wide bandgap semiconductor material such as a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, or a diamond substrate.
  • the semiconductor element 20 has an upper surface and a lower surface.
  • the upper surface and the lower surface are end surfaces of the semiconductor element 20 in the thickness direction.
  • the lower surface is the opposite surface to the upper surface.
  • the semiconductor element 20 has electrodes on the upper and lower surfaces.
  • the semiconductor element 20 is an IGBT
  • the semiconductor element 20 has an emitter electrode and a gate electrode on the upper surface, and a collector electrode on the lower surface.
  • the semiconductor element 20 is a MOSFET, it has a source electrode and a gate electrode on the upper surface, and a drain electrode on the lower surface.
  • the upper and lower electrodes of the semiconductor element 20 are made of, for example, aluminum or an aluminum alloy in which silicon is added to aluminum.
  • a covering layer made of, for example, nickel (Ni), gold (Au), etc. may be disposed on the surfaces of the upper and lower electrodes of the semiconductor element 20.
  • the semiconductor element 20 is arranged on the circuit board 10. More specifically, the semiconductor element 20 is arranged on the conductor pattern 12. The electrodes on the lower surface of the semiconductor element 20 are bonded to the conductor pattern 12 with a bonding material 60 . Thereby, the semiconductor element 20 is electrically connected to the circuit board 10.
  • the bonding material 60 is made of, for example, sintered silver particles, solder alloy, or the like.
  • the conductor 30 has one end 30a and the other end 30b.
  • the conductor 30 is electrically connected to the circuit board 10 at one end 30a. More specifically, one end 30 a is bonded to the conductor pattern 12 with a bonding material 61 .
  • the bonding material 61 is made of, for example, sintered silver particles, solder alloy, or the like. Thereby, the conductor 30 is electrically connected to the circuit board 10.
  • the one end portion 30a may be directly bonded to the conductive pattern 12 by ultrasonic bonding or the like. Further, the one end portion 30a may be connected to the conductor pattern 12 by screw fastening.
  • the conductor 30 is made of copper, for example.
  • the wire 31 is connected to the conductor pattern 12 at one end, and to the electrode on the upper surface of the semiconductor element 20 (or the gate electrode if the semiconductor element 20 is an IGBT or MOSFET) at the other end. Thereby, the semiconductor element 20 is electrically connected to the circuit board 10.
  • the bonding between the wire 31 and the electrode on the upper surface of the semiconductor element 20 and the bonding between the wire 31 and the conductor pattern 12 are performed, for example, by wire bonding.
  • the wire 31 is made of, for example, gold, aluminum, copper, or the like. Note that, for example, a control signal for the semiconductor element 20 flows through the wire 31.
  • the power module 100A may include a conductive member for electrically connecting the conductor pattern 12 and the semiconductor element 20 instead of the wire 31.
  • the conductor block 40 has an upper end 40a and a lower end 40b.
  • the conductor block 40 is arranged on the semiconductor element 20.
  • the lower end 40b is bonded to an electrode on the surface of the semiconductor element 20 (an emitter electrode when the semiconductor element 20 is an IGBT, and a source electrode when the semiconductor element 20 is a MOSFET) by a bonding material 62.
  • the conductor block 40 is electrically connected to the semiconductor element 20 at the lower end 40b.
  • a hole 41 is formed in the upper end 40a.
  • the hole 41 extends toward the lower end 40b.
  • the upper end 40a side of the hole 41 is a screw hole 42 (female thread).
  • the conductor 30 is fastened to the upper end 40a by screwing the screw 43 into the screw hole 42.
  • the screw 43 is made of copper, for example.
  • a liquid 44 is sealed in the hole 41 . That is, a liquid 44 is sealed inside the conductor block 40.
  • the liquid 44 is, for example, water, fluorocarbon, halofluorocarbon, hexachloroethane, fluorinate, fluorine-based inert liquid, or the like.
  • the inner wall surface of the hole 41 that comes into contact with the liquid 44 may be subjected to surface treatment such as metal plating.
  • the circuit board 10 is arranged on the upper surface of the base plate 50. More specifically, the circuit board 10 is arranged on the base plate 50 by bonding the conductive pattern 13 to the upper surface of the base plate 50 using the bonding material 63.
  • the bonding material 63 is made of, for example, sintered silver particles, solder alloy, or the like.
  • the base plate 50 is made of, for example, copper, silicon carbide particle reinforced aluminum composite material (AlSiC), or the like.
  • the power module 100A does not need to have the base plate 50 and the bonding material 63.
  • conductive pattern 13 is used instead of base plate 50.
  • the insulating layer 11 may be formed of an electrically insulating resin material.
  • the case 51 is attached to the outer peripheral edge of the base plate 50. Case 51 extends along a direction intersecting the upper surface of base plate 50. Case 51 is made of electrically insulating material.
  • the space defined by the upper surface of the base plate 50 and the inner wall surface of the case 51 is filled with a sealing material 52.
  • the sealing material 52 is made of a thermosetting resin material. Examples of the thermosetting resin material include silicone and epoxy.
  • the resin material constituting the sealing material 52 preferably contains a metal or filler that does not easily deteriorate at high temperatures.
  • a plurality of unevenness may be formed on the surface of the conductive pattern 12 opposite to the insulating layer 11. This improves the adhesion between the sealing material 52 and the conductor pattern 12. Further, in order to improve the adhesion between the sealing material 52 and the conductor pattern 12, the surface of the conductor pattern 12 may be coated.
  • FIG. 3 is a process diagram showing a method for manufacturing the power module 100A.
  • the method for manufacturing the power module 100A includes a first bonding step S1, a second bonding step S2, a third bonding step S3, a fourth bonding step S4, a conductor connection step S5, and a sealing step S6.
  • the electrode on the lower surface of the semiconductor element 20 and the conductor pattern 12 are bonded using the bonding material 60.
  • the second bonding step S2 is performed after the first bonding step S1.
  • the conductor block 40 (lower end 40b) and the semiconductor element 20 (electrode on the upper surface of the semiconductor element 20) are bonded using the bonding material 62.
  • the third bonding step S3 is performed after the second bonding step S2.
  • the conductor 30 (the other end 30b) and the conductor pattern 12 are bonded using the bonding material 61.
  • the fourth bonding step S4 is performed after the third bonding step S3.
  • the conductive pattern 13 is bonded to the base plate 50 using the bonding material 63.
  • first bonding step S1, second bonding step S2, third bonding step S3, and fourth bonding step S4 may be changed as appropriate. All or part of the first bonding step S1, the second bonding step S2, the third bonding step S3, and the fourth bonding step S4 may be performed simultaneously.
  • the conductor connection step S5 is performed after the first bonding step S1, the second bonding step S2, the third bonding step S3, and the fourth bonding step S4.
  • the conductor 30 is screwed to the upper end 40a by screwing the screw 43 into the screw hole 42, and the conductor 30 and the conductor block 40 are electrically connected.
  • the sealing step S6 is performed after the conductor connecting step S5.
  • the space defined by the upper surface of the base plate 50 and the inner wall surface of the case 51 is filled with the sealant 52.
  • Filling with the sealant 52 is performed by, for example, supplying the sealant 52 from above using a dispenser or the like. Filling with the sealing material 52 may be performed in a first step and a second step.
  • the power module 100A that has been subjected to the conductor connection step S5 is immersed in the sealing material 52 stored in the container and then pulled up.
  • the sealing material 52 is further supplied to the space defined by the upper surface of the base plate 50 and the inner wall surface of the case 51 in the power module 100A that has undergone the first step. Note that the sealing material 52 used in the first step and the sealing material 52 used in the second step may be different materials or may be the same material.
  • the semiconductor element 20 When the power module 100A operates, the semiconductor element 20 generates heat. As a result, in the power module 100A, the semiconductor element 20 and the joints with the members connected to the semiconductor element 20 become high in temperature during operation. On the other hand, when cooling the power module 100A, the heat generated in the semiconductor element 20 is transmitted in this order to the bonding material 60, the conductive pattern 12, the insulating layer 11, the conductive pattern 13, the bonding material 63, and the base plate 50, and is transferred from the base plate 50 to the outside. The temperature of the semiconductor element 20 decreases by dissipating the heat.
  • the bonding material may deteriorate due to the difference in the coefficient of thermal expansion between the semiconductor element 20 and the conductor block 40 and the difference in the coefficient of thermal expansion between the conductor pattern 12 and the semiconductor element 20.
  • Thermal stress is generated in the bonding material 60 and the bonding material 62. This thermal stress concentrates on the ends of the bonding material 60 and the bonding material 62, causing the bonding material 60, the bonding material 62, the interface between the bonding material 60 and the conductive pattern 12 or the semiconductor element 20, Cracks may occur at the interface between the semiconductor element 62 and the semiconductor element 20 or the conductor block 40.
  • the above temperature fluctuations are repeated, cracks develop and eventually lead to electrical connections between the conductor pattern 12 and the semiconductor element 20 and between the semiconductor element 20 and the conductor block 40. will be resolved.
  • a liquid 44 is sealed inside the conductor block 40. Therefore, even if the semiconductor element 20 generates heat during the operation of the power module 100A, the heat generated in the semiconductor element 20 will be consumed by increasing the temperature of the liquid 44 and changing the phase of the liquid 44. Fluctuations in temperature between operation and cooling can be reduced. Since the liquid 44 has almost no rigidity, even if there is a difference in coefficient of thermal expansion between the liquid 44 and its surroundings, it does not cause thermal stress. In this way, according to the power module 100A, it is possible to reduce thermal stress around the semiconductor element 20.
  • the conductor block 40 functions not only as a member for enclosing the liquid 44 but also as a member for electrically connecting the semiconductor element 20 and the conductor 30. Therefore, in the power module 100A, there is no need to separately provide a current path from the semiconductor element 20, and even if the conductor block 40 and the semiconductor element 20 are placed close to each other, it is possible to reduce the current density in the current path from the semiconductor element 20. It is. Furthermore, in the power module 100A, since one conductor block 40 is arranged on one semiconductor element 20, positioning of the conductor block 40 in the first bonding step S1 is facilitated.
  • Embodiment 2 A power module according to Embodiment 2 will be explained.
  • the power module according to the second embodiment is referred to as a power module 100B.
  • differences from the power module 100A will be mainly explained, and overlapping explanations will not be repeated.
  • FIG. 4 is a partially enlarged sectional view of the power module 100B.
  • the power module 100B includes a circuit board 10, a plurality of semiconductor elements 20, a conductor 30, a wire 31, a plurality of conductor blocks 40, a base plate 50, a case 51, and a seal. It has a stopper 52.
  • the configuration of power module 100B is common to the configuration of power module 100A. Note that in FIG. 4, illustration of the base plate 50 and the case 51 is omitted.
  • the hole 41 has an enlarged diameter portion 45 on the lower end 40b side.
  • the enlarged diameter portion 45 has a larger inner diameter than the screw hole 42 .
  • the configuration of power module 100B is different from the configuration of power module 100A.
  • the hole 41 has an enlarged diameter portion 45 on the lower end 40b side. Therefore, in the power module 100B, the volume of the sealed liquid 44, that is, the heat capacity of the sealed liquid 44, can be increased on the side closer to the semiconductor element 20, and temperature fluctuations between operation and cooling can be further reduced. Can be made smaller. As a result, according to the power module 100B, it is possible to further reduce thermal stress around the semiconductor element 20. Further, in the power module 100B, since the hole 41 has the enlarged diameter portion 45, the volume of the portion of the hole 41 in which the liquid 44 is not sealed can be increased, so that the pressure inside the hole 41 is increased. It is possible to reduce the
  • FIG. 5 is a partially enlarged sectional view of a power module 100B according to a modification.
  • the semiconductor element 20 located at the center of the plurality of semiconductor elements 20 is referred to as a semiconductor element 20A.
  • the semiconductor element 20 located outside the semiconductor element 20A among the plurality of semiconductor elements 20 is referred to as a semiconductor element 20B.
  • the conductor block 40 placed on the semiconductor element 20A is referred to as a conductor block 40A
  • the conductor block 40 placed on the semiconductor element 20A is referred to as a conductor block 40B.
  • the temperature rise around the semiconductor element 20A tends to be larger during operation than around the semiconductor element 20B.
  • the hole 41 of the conductor block 40A has the enlarged diameter part 45, but the hole 41 of the conductor block 40B does not have the enlarged diameter part 45, there is a gap between the periphery of the semiconductor element 20A and the periphery of the semiconductor element 20B. It is possible to reduce the imbalance in temperature rise. As a result, it is possible to reduce variations in the degree of crack growth from place to place due to thermal stress.
  • Embodiment 3 A power module according to Embodiment 3 will be explained.
  • the power module according to the third embodiment is referred to as a power module 100C.
  • the points that are different from the power module 100A will be mainly explained, and duplicate explanations will not be repeated.
  • FIG. 6 is a partially enlarged sectional view of the power module 100C.
  • the power module 100C includes a circuit board 10, a plurality of semiconductor elements 20, a conductor 30, a wire 31, a conductor block 40, a base plate 50, a case 51, and a sealing material. 52.
  • the configuration of the power module 100C is common to the configuration of the power module 100A. Note that in FIG. 6, illustration of the base plate 50 and the case 51 is omitted.
  • the conductor block 40 is arranged over the plurality of semiconductor elements 20. To put this from another perspective, the conductor blocks 40 on each of the plurality of semiconductor elements 20 are integrated. Accordingly, the holes 41 of the plurality of integrated conductor blocks 40 are connected to each other. In this regard, the configuration of power module 100C is different from the configuration of power module 100A.
  • the total volume of the holes 41 that is, the total volume of the liquid 44 sealed therein is increased. Therefore, according to the power module 100C, it is possible to further reduce thermal stress around the semiconductor element 20.
  • FIG. 7 is a partially enlarged sectional view of a power module 100C according to a modification. As shown in FIG. 7, in the power module 100C, only some of the plurality of conductor blocks 40 may be integrated. In this case as well, since the total volume of the liquid 44 sealed is increased, it is possible to further reduce the thermal stress around the semiconductor element 20.
  • Embodiment 4 A power module according to Embodiment 4 will be explained.
  • the power module according to the fourth embodiment is referred to as a power module 100D.
  • differences from the power module 100A will be mainly explained, and overlapping explanations will not be repeated.
  • FIG. 8 is a partially enlarged sectional view of the power module 100D.
  • the power module 100D includes a circuit board 10, a plurality of semiconductor elements 20, a conductor 30, a wire 31, a conductor block 40, a base plate 50, a case 51, and a sealing material. 52.
  • the configuration of power module 100D is common to the configuration of power module 100A. Note that in FIG. 8, illustration of the base plate 50 and the case 51 is omitted.
  • the hole 41 reaches the lower end 40b. That is, in the power module 100D, the hole 41 penetrates the conductor block 40. As a result, in the power module 100D, the liquid 44 sealed in the hole 41 is in contact with the semiconductor element 20. In this regard, the configuration of power module 100D is different from the configuration of power module 100A.
  • the power module 100D since the liquid 44 sealed in the hole 41 is in contact with the semiconductor element 20, heat generated in the semiconductor element 20 is easily transferred to the liquid 44. Therefore, in the power module 100D, the temperature fluctuation between the operation time and the cooling time can be further reduced. As a result, according to the power module 100D, it is possible to further reduce thermal stress around the semiconductor element 20.
  • FIG. 9 is a partially enlarged sectional view of a power module 100D according to a modification.
  • the holes 41 reach the lower end 40b (liquid 44 is in contact with the semiconductor element 20), while in the conductor block 40B, the holes 41 do not reach the lower end 40b. (Liquid 44 is not in contact with semiconductor element 20).
  • Liquid 44 is not in contact with semiconductor element 20.
  • Embodiment 5 the power modules according to the first to fourth embodiments described above are applied to a power conversion device.
  • the present disclosure is not limited to a specific power conversion device, a case will be described below as Embodiment 5 in which the present disclosure is applied to a three-phase inverter.
  • the power conversion system according to the fifth embodiment is referred to as a power conversion system 200.
  • FIG. 10 is a block diagram showing the configuration of the power conversion system 200.
  • the power conversion system includes a power source 300, a power conversion device 400, and a load 500.
  • Power supply 300 is a DC power supply and supplies DC power to power conversion device 400.
  • the power source 300 can be composed of various things, for example, it can be composed of a DC system, a solar battery, a storage battery, or it can be composed of a rectifier circuit or an AC/DC converter connected to an AC system. Good too.
  • the power supply 300 may be configured with a DC/DC converter that converts DC power output from a DC system into predetermined power.
  • the power conversion device 400 is a three-phase inverter connected between the power source 300 and the load 500, converts the DC power supplied from the power source 300 into AC power, and supplies the AC power to the load 500. As shown in FIG. 10, the power conversion device 400 includes a main conversion circuit 401 that converts DC power into AC power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit 401 to the main conversion circuit 401. 403.
  • the load 500 is a three-phase electric motor driven by AC power supplied from the power converter 400.
  • the load 500 is not limited to a specific application, but is a motor installed in various electrical devices, and is used, for example, as a motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 401 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, it converts the DC power supplied from the power supply 300 into AC power, and supplies the AC power to the load 500.
  • the main conversion circuit 401 is a two-level three-phase full bridge circuit, and includes six switching elements and each switching element. It can be composed of six freewheeling diodes connected in antiparallel to each other.
  • each switching element and each freewheeling diode of the main conversion circuit 401 is a switching element or a freewheeling diode included in the semiconductor module 402 corresponding to the power module according to any of the first to fourth embodiments described above. be.
  • the six switching elements are connected in series every two switching elements to constitute upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit.
  • the output terminals of the upper and lower arms that is, the three output terminals of the main conversion circuit 401, are connected to the load 500.
  • the main conversion circuit 401 includes a drive circuit (not shown) that drives each switching element, but the drive circuit may be built into the semiconductor module 402 or may include a drive circuit separately from the semiconductor module 402. It may be.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 401 and supplies it to the control electrode of the switching element of the main conversion circuit 401. Specifically, according to a control signal from a control circuit 403, which will be described later, a drive signal that turns the switching element on and a drive signal that turns the switching element off are output to the control electrode of each switching element.
  • the drive signal When keeping the switching element in the on state, the drive signal is a voltage signal (on signal) that is greater than or equal to the threshold voltage of the switching element, and when the switching element is kept in the off state, the drive signal is a voltage signal that is less than or equal to the threshold voltage of the switching element. signal (off signal).
  • the control circuit 403 controls the switching elements of the main conversion circuit 401 so that the desired power is supplied to the load 500. Specifically, based on the power to be supplied to the load 500, the time during which each switching element of the main conversion circuit 401 should be in the on state (on time) is calculated. For example, the main conversion circuit 401 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is sent to the drive circuit included in the main conversion circuit 401 so that an on signal is output to the switching element that should be in the on state at each time, and an off signal is output to the switching element that should be in the off state. Output.
  • the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
  • the power modules according to the first to fourth embodiments described above are applied as the semiconductor module 402 constituting the main conversion circuit 401, the generation of thermal stress around the semiconductor element 20 is suppressed. At the same time, it is possible to reduce the current density in the current path from the semiconductor element 20.
  • the present disclosure is not limited to this and can be applied to various power conversion devices.
  • a two-level power converter is used, but a three-level or multi-level power converter may be used, and when supplying power to a single-phase load, the present disclosure may be applied to a single-phase inverter. May be applied.
  • the present disclosure can also be applied to a DC/DC converter or an AC/DC converter.
  • the power conversion device to which the present disclosure is applied is not limited to cases where the above-mentioned load is an electric motor. It can also be used as a power conditioner for solar power generation systems, power storage systems, etc.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un module d'alimentation (100A, 100B, 100C, 100D) comprenant une carte de circuit imprimé (10), un premier élément semi-conducteur (20), un bloc conducteur (40) et un conducteur (30). Le premier élément semi-conducteur est disposé sur la carte de circuit imprimé. Le bloc conducteur comprend une extrémité supérieure (40a) et une extrémité inférieure (40b). Le bloc conducteur est disposé sur le premier élément semi-conducteur de telle sorte que l'extrémité inférieure est électriquement connectée au premier élément semi-conducteur. Un liquide est scellé à l'intérieur du bloc conducteur. Le conducteur connecte électriquement la carte de circuit imprimé et l'extrémité supérieure.
PCT/JP2022/025730 2022-06-28 2022-06-28 Module d'alimentation et dispositif de conversion de puissance WO2024004024A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/JP2022/025730 WO2024004024A1 (fr) 2022-06-28 2022-06-28 Module d'alimentation et dispositif de conversion de puissance
JP2022575431A JP7334369B1 (ja) 2022-06-28 2022-06-28 パワーモジュール及び電力変換装置

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PCT/JP2022/025730 WO2024004024A1 (fr) 2022-06-28 2022-06-28 Module d'alimentation et dispositif de conversion de puissance

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WO2024004024A1 true WO2024004024A1 (fr) 2024-01-04

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JPH06104355A (ja) * 1992-09-22 1994-04-15 Toshiba Corp 冷却液封入型半導体装置
JPH0774287A (ja) * 1993-07-08 1995-03-17 Seiko Epson Corp ヒートシンク付き半導体装置及びそのヒートシンクの製造方法
JPH08191114A (ja) * 1994-11-11 1996-07-23 Seiko Epson Corp 樹脂封止型半導体装置およびその製造方法
JP2003264265A (ja) * 2002-03-08 2003-09-19 Mitsubishi Electric Corp 電力用半導体装置
WO2018180580A1 (fr) * 2017-03-30 2018-10-04 三菱電機株式会社 Dispositif à semi-conducteur et dispositif de conversion de puissance

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04284654A (ja) * 1991-03-14 1992-10-09 Fujitsu Ltd 半導体装置の放熱構造
JPH06104355A (ja) * 1992-09-22 1994-04-15 Toshiba Corp 冷却液封入型半導体装置
JPH0774287A (ja) * 1993-07-08 1995-03-17 Seiko Epson Corp ヒートシンク付き半導体装置及びそのヒートシンクの製造方法
JPH08191114A (ja) * 1994-11-11 1996-07-23 Seiko Epson Corp 樹脂封止型半導体装置およびその製造方法
JP2003264265A (ja) * 2002-03-08 2003-09-19 Mitsubishi Electric Corp 電力用半導体装置
WO2018180580A1 (fr) * 2017-03-30 2018-10-04 三菱電機株式会社 Dispositif à semi-conducteur et dispositif de conversion de puissance

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