JP7268760B2 - 半導体モジュール、電力変換装置及び移動体 - Google Patents
半導体モジュール、電力変換装置及び移動体 Download PDFInfo
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- JP7268760B2 JP7268760B2 JP2021563487A JP2021563487A JP7268760B2 JP 7268760 B2 JP7268760 B2 JP 7268760B2 JP 2021563487 A JP2021563487 A JP 2021563487A JP 2021563487 A JP2021563487 A JP 2021563487A JP 7268760 B2 JP7268760 B2 JP 7268760B2
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- lead
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- semiconductor module
- circuit pattern
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000155 melt Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
図1は、実施の形態1に係る半導体モジュールを示す断面図である。ベース板1の上に絶縁基板2が設けられている。絶縁基板2の下面に下面電極3が設けられ、絶縁基板2の上面に回路パターン4,5が設けられている。下面電極3はベース板1にはんだ6により接合されている。
図2は、実施の形態2に係る半導体モジュールを示す断面図である。高圧側端子であるリード11が回路パターン4にはんだ13により接合されている。低圧側端子であるリード12が回路パターン5に超音波接合されている。高圧側端子がはんだ接合されているため、高圧側端子と低圧側端子との間に発生する過電流だけでなく、高圧側端子とベース板1との間に発生する過電流も遮断することができる。この結果、地絡のような故障モードを防ぐことができる。その他の構成及び効果は実施の形態1と同様である。
図3は、実施の形態3に係る半導体モジュールを示す断面図である。絶縁基板2の上面に更に回路パターン16が設けられている。リード11が回路パターン4に超音波接合され、リード12が回路パターン5に超音波接合されている。半導体素子7のエミッタ電極9が回路パターン16にワイヤ10により接続されている。コの字型のリード17の一端が回路パターン5にはんだ18により接合され、他端が回路パターン16に超音波接合されている。その他の構成は実施の形態1と同様である。
図5は、実施の形態4に係る半導体モジュールを示す断面図である。リード11が回路パターン4に超音波接合され、リード12が回路パターン5に超音波接合されている。コの字型のリード17の一端が半導体素子7のエミッタ電極9にはんだ18により接合され、他端が回路パターン5に超音波接合されている。その他の構成は実施の形態1と同様である。
本実施の形態は、上述した実施の形態1~4に係る半導体モジュールを電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態5として、三相のインバータに本発明を適用した場合について説明する。
図7は、実施の形態6に係る移動体を示す図である。移動体400は、実施の形態5に係る電力変換装置200を備えた鉄道車両である。移動体400は、電力変換装置200からの出力を用いて移動可能となっている。電力変換装置200の信頼性の向上によって移動体400の信頼性も向上することができる。また、電力変換装置200の消費電力の削減により移動体400のメンテサイクルを軽減し、長寿命化を実現できる。なお、移動体400は鉄道車両に限らず、例えば、ハイブリッド自動車、電気自動車、エレベーターなどでもよい。
Claims (8)
- 第1及び第2の回路パターンを有する絶縁基板と、
前記第1及び第2の回路パターンにそれぞれ接続され、主電流が流れる第1及び第2の主電極を有する半導体素子と、
前記第1の回路パターンにはんだにより接合された第1のリードと、
前記第2の回路パターンに超音波接合された第2のリードとを備え、
前記はんだが溶融すると前記第1のリードと前記第1の回路パターンが離間することを特徴とする半導体モジュール。 - 前記絶縁基板の下面に接合されたベース板を更に備え、
前記第1のリードは高圧側端子であり、前記第2のリードは低圧側端子であることを特徴とする請求項1に記載の半導体モジュール。 - 第1及び第2の回路パターンを有する絶縁基板と、
前記第1及び第2の回路パターンの一方に接続され、主電流が流れる主電極を有する半導体素子と、
一端が前記第1の回路パターンにはんだにより接合され、他端が前記第2の回路パターンに超音波接合されたコの字型のリードとを備え、
前記はんだが溶融すると前記リードの一端が前記第1の回路パターンから剥離することを特徴とする半導体モジュール。 - 回路パターンを有する絶縁基板と、
主電流が流れる主電極を有する半導体素子と、
一端が前記主電極にはんだにより接合され、他端が前記回路パターンに超音波接合されたコの字型のリードとを備え、
前記はんだが溶融すると前記リードの一端が前記主電極から剥離することを特徴とする半導体モジュール。 - 前記リードは前記一端から前記他端まで厚みが一定の一枚の金属板であり、
前記リードの前記一端は、前記主電極に前記はんだのみを介して直接的に接合されていることを特徴とする請求項4に記載の半導体モジュール。 - 前記半導体素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1~5の何れか1項に記載の半導体モジュール。
- 請求項1~6の何れか1項に記載の半導体モジュールを有し、入力される電力を変換して出力する主変換回路と、
前記半導体モジュールを駆動する駆動信号を前記半導体モジュールに出力する駆動回路と、
前記駆動回路を制御する制御信号を前記駆動回路に出力する制御回路とを備えることを特徴とする電力変換装置。 - 請求項7に記載の電力変換装置を備えることを特徴とする移動体。
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JP2011004502A (ja) | 2009-06-18 | 2011-01-06 | Nissan Motor Co Ltd | 短絡保護装置 |
JP2017028159A (ja) | 2015-07-24 | 2017-02-02 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2017139304A (ja) | 2016-02-03 | 2017-08-10 | 三菱電機株式会社 | 電極端子、半導体装置及び電力変換装置 |
JP2019145475A (ja) | 2018-02-23 | 2019-08-29 | 株式会社アドヴィックス | ヒューズ装置およびヒューズ装置の製造方法 |
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JP2013069782A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 半導体装置 |
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JP2011004502A (ja) | 2009-06-18 | 2011-01-06 | Nissan Motor Co Ltd | 短絡保護装置 |
JP2017028159A (ja) | 2015-07-24 | 2017-02-02 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2017139304A (ja) | 2016-02-03 | 2017-08-10 | 三菱電機株式会社 | 電極端子、半導体装置及び電力変換装置 |
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