JP6690777B2 - 主変換回路、電力変換装置及び移動体 - Google Patents
主変換回路、電力変換装置及び移動体 Download PDFInfo
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- JP6690777B2 JP6690777B2 JP2019504196A JP2019504196A JP6690777B2 JP 6690777 B2 JP6690777 B2 JP 6690777B2 JP 2019504196 A JP2019504196 A JP 2019504196A JP 2019504196 A JP2019504196 A JP 2019504196A JP 6690777 B2 JP6690777 B2 JP 6690777B2
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- 239000004065 semiconductor Substances 0.000 claims description 70
- 238000006243 chemical reaction Methods 0.000 claims description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を示す平面図である。半導体装置1はMOSトランジスタを内蔵している。半導体装置1の筐体の長手方向の一端にAC出力端子2が設けられ、他端に正電圧入力端子3と負電圧入力端子4が設けられている。正電圧入力端子3は高電圧側主端子であり、負電圧入力端子4はグラウンド側主端子である。これらに挟まれるように、高電圧側ゲート端子5、高電圧側エミッタ補助端子6、低電圧側ゲート端子7、低電圧側エミッタ補助端子8が設けられている。
本実施の形態は、上述した実施の形態1を用いた主変換回路を電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態2として、三相のインバータに本発明を適用した場合について説明する。
Claims (8)
- 互いに並列に接続された複数の半導体装置と、
前記複数の半導体装置のゲートにゲート電圧を供給するゲートドライバと、
前記ゲートドライバから前記複数の半導体装置の前記ゲートに順に接続されたゲート配線とを備え、
各半導体装置の通電能力は、供給された前記ゲート電圧に対するコレクタ電流の流れ易さであり、
前記複数の半導体装置は、前記通電能力が低いものほど前記ゲートドライバの近くに接続されていることを特徴とする主変換回路。 - 前記複数の半導体装置は、コレクタ−エミッタ飽和電圧が大きいものほど前記ゲートドライバの近くに接続されていることを特徴とする請求項1に記載の主変換回路。
- 前記複数の半導体装置は、ゲート閾電圧が大きいものほど前記ゲートドライバの近くに接続されていることを特徴とする請求項1に記載の主変換回路。
- 前記複数の半導体装置は、導通開始遅れ時間が大きいものほど前記ゲートドライバの近くに接続されていることを特徴とする請求項1に記載の主変換回路。
- 前記複数の半導体装置はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜4の何れか1項に記載の主変換回路。
- 前記複数の半導体装置において、筐体の長手方向の一端にAC出力端子が設けられ、他端に正電圧入力端子と負電圧入力端子が設けられ、前記AC出力端子と前記正電圧入力端子又は前記負電圧入力端子に挟まれるように前記ゲートが設けられていることを特徴とする請求項1〜5の何れか1項に記載の主変換回路。
- 入力される電力を変換して出力する請求項1〜6の何れか1項に記載の主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備えることを特徴とする電力変換装置。 - 請求項7に記載の電力変換装置を備えることを特徴とする移動体。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/009239 WO2018163320A1 (ja) | 2017-03-08 | 2017-03-08 | 主変換回路、電力変換装置及び移動体 |
Publications (2)
Publication Number | Publication Date |
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JPWO2018163320A1 JPWO2018163320A1 (ja) | 2019-11-07 |
JP6690777B2 true JP6690777B2 (ja) | 2020-04-28 |
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JP2019504196A Active JP6690777B2 (ja) | 2017-03-08 | 2017-03-08 | 主変換回路、電力変換装置及び移動体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10848049B2 (ja) |
JP (1) | JP6690777B2 (ja) |
CN (1) | CN110383654B (ja) |
DE (1) | DE112017007206T5 (ja) |
WO (1) | WO2018163320A1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3773664B2 (ja) * | 1998-09-11 | 2006-05-10 | 三菱電機株式会社 | 駆動制御装置、モジュール、および、複合モジュール |
JP2004229382A (ja) | 2003-01-21 | 2004-08-12 | Toshiba Corp | ゲート駆動回路、および電力変換装置 |
CN1233086C (zh) * | 2003-08-29 | 2005-12-21 | 清华大学 | 一种电荷泵电路 |
JP4925841B2 (ja) | 2007-01-19 | 2012-05-09 | 三菱電機株式会社 | 電力用半導体素子の駆動回路および電力変換装置 |
JP5817748B2 (ja) * | 2013-01-25 | 2015-11-18 | トヨタ自動車株式会社 | インバータ |
JP6171553B2 (ja) * | 2013-05-17 | 2017-08-02 | 富士電機株式会社 | 電力変換装置 |
DE102014119544B4 (de) * | 2014-12-23 | 2023-08-17 | Infineon Technologies Ag | Halbleitervorrichtung |
JP2017022798A (ja) * | 2015-07-07 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 電力変換装置および駆動装置 |
JP6475594B2 (ja) * | 2015-08-26 | 2019-02-27 | 株式会社日立製作所 | パワー半導体素子の駆動回路、電力変換ユニットおよび電力変換装置 |
US10432186B2 (en) * | 2017-11-14 | 2019-10-01 | Ford Global Technologies, Llc | Variable resistance power switch feedback |
-
2017
- 2017-03-08 WO PCT/JP2017/009239 patent/WO2018163320A1/ja active Application Filing
- 2017-03-08 CN CN201780087902.5A patent/CN110383654B/zh active Active
- 2017-03-08 DE DE112017007206.9T patent/DE112017007206T5/de active Pending
- 2017-03-08 US US16/462,127 patent/US10848049B2/en active Active
- 2017-03-08 JP JP2019504196A patent/JP6690777B2/ja active Active
Also Published As
Publication number | Publication date |
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US20200321851A1 (en) | 2020-10-08 |
JPWO2018163320A1 (ja) | 2019-11-07 |
US10848049B2 (en) | 2020-11-24 |
WO2018163320A1 (ja) | 2018-09-13 |
DE112017007206T5 (de) | 2019-11-21 |
CN110383654B (zh) | 2021-08-20 |
CN110383654A (zh) | 2019-10-25 |
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