WO2023241660A1 - Ibc电池片、ibc电池组件及其制备方法 - Google Patents

Ibc电池片、ibc电池组件及其制备方法 Download PDF

Info

Publication number
WO2023241660A1
WO2023241660A1 PCT/CN2023/100469 CN2023100469W WO2023241660A1 WO 2023241660 A1 WO2023241660 A1 WO 2023241660A1 CN 2023100469 W CN2023100469 W CN 2023100469W WO 2023241660 A1 WO2023241660 A1 WO 2023241660A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafer
ibc
gasket
electrode
negative electrode
Prior art date
Application number
PCT/CN2023/100469
Other languages
English (en)
French (fr)
Inventor
李跃恒
赵邦桂
刘军保
吴翔
申海超
韩秦军
李绪存
马国宝
Original Assignee
青海黄河上游水电开发有限责任公司西宁太阳能电力分公司
青海黄河上游水电开发有限责任公司西安太阳能电力分公司
青海黄河上游水电开发有限责任公司
国家电投集团黄河上游水电开发有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司, 青海黄河上游水电开发有限责任公司西安太阳能电力分公司, 青海黄河上游水电开发有限责任公司, 国家电投集团黄河上游水电开发有限责任公司 filed Critical 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司
Publication of WO2023241660A1 publication Critical patent/WO2023241660A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of photovoltaic components, and specifically relates to an IBC cell sheet, an IBC cell component and a preparation method thereof.
  • the technical problem solved by this invention is: how to reduce the complexity of the production process of IBC battery sheets and IBC battery components.
  • a method for preparing IBC battery sheets includes:
  • An electrode pattern is made on the silicon wafer and the gasket.
  • the electrode pattern includes a positive electrode fine grid line and a negative electrode fine grid line located on the silicon wafer and a positive electrode connected to both ends of the positive electrode thin grid line.
  • a negative electrode connected to both ends of the negative electrode thin gate line, parts of the positive electrode and parts of the negative electrode both extend outside the edge of the silicon wafer and are located on the gasket;
  • the electrode pattern is sintered at high temperature and the gasket is removed, wherein the portions of the positive electrode and the negative electrode that protrude from the silicon wafer are in a suspended state.
  • the method of removing the gasket is to volatilize the gasket during high-temperature sintering.
  • the gasket is made of a material with a vaporization temperature less than 700°C.
  • the thickness difference between the silicon wafer and the gasket is less than or equal to 50 ⁇ m.
  • the method of producing the electrode pattern on the silicon wafer and the gasket is to produce the electrode pattern using a one-time printing process.
  • the method for making electrode patterns on the silicon wafer and gasket is:
  • the positive electrode and the negative electrode are produced on the edge of the silicon wafer and the gasket using a second printing process.
  • the pastes used in the first printing process and the first printing process are different.
  • the positive electrode and the negative electrode have different shapes.
  • This application also discloses a method for preparing an IBC battery component.
  • the preparation method includes:
  • This application also discloses an IBC battery sheet, which is produced by any of the above-mentioned IBC battery sheet preparation methods.
  • This application also discloses an IBC battery component, and the IBC battery sheet is produced by the above-mentioned preparation method of the IBC battery component.
  • the invention discloses an IBC battery sheet, an IBC battery component and a preparation method thereof. Compared with traditional methods, it has the following technical effects:
  • the metallization process of IBC batteries can be changed from the conventional multiple printing and multiple drying and sintering to only one printing and one sintering process.
  • the welding process is omitted on the component side, which is greatly simplified. It simplifies the production process and reduces production costs.
  • the height difference of each cell is exactly the same at the component end, which greatly reduces the extrusion stress caused by the different heights of different cells.
  • the debris caused improves the product quality of IBC battery components; it is conducive to improving the low-cost production of IBC batteries and improving the market competitiveness and popularity of IBC batteries.
  • Figure 1 is a schematic diagram of the preparation process of the IBC battery sheet according to the embodiment of the present invention.
  • Figure 2 is a schematic diagram of an IBC cell sheet after being coated with conductive adhesive according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of the preparation process of the IBC battery assembly according to Embodiment 2 of the present invention.
  • IBC battery piece 100
  • the IBC battery manufacturing process in the prior art often requires multiple printings and preparation of main grid lines, and soldering ribbons are required during assembly.
  • the overall manufacturing process is relatively complex, and the height difference caused by the welding strip can easily cause the risk of debris.
  • this application first produced an IBC cell chip without main grid lines. Positive and negative electrodes are connected to both ends of the positive and negative thin grid lines, and part of the positive and negative electrodes extend outside the silicon wafer.
  • the positive and negative electrodes of the two adjacent IBC cells are connected through conductive glue, thereby realizing the series connection of the two adjacent IBC cells without the need to use welding tape to weld the two IBCs.
  • Cell sheets avoid the risk of fragmentation caused by the height difference of the soldering strips.
  • the preparation method of the IBC battery sheet in Embodiment 1 includes the following steps:
  • Step S10 Place gaskets 20 on opposite sides of the silicon wafer 10.
  • the thickness of the gasket 20 is less than or equal to the thickness of the silicon wafer;
  • Step S20 Make an electrode pattern on the silicon wafer 10 and the gasket 20.
  • the electrode pattern includes a positive electrode fine gate line 11 and a negative electrode fine gate line 12 located on the silicon wafer 10 and connected to the positive electrode fine gate line.
  • Step S30 Perform high-temperature sintering on the electrode pattern and remove the gasket, wherein the portions of the positive electrode 13 and the negative electrode 14 extending beyond the silicon wafer 10 are in a suspended state.
  • step S10 the gaskets 20 on both sides are close to the edges of the silicon wafer 10, the length of the gasket 20 is greater than or equal to the length of the silicon wafer, and the gasket 20 serves as an extended platform surface of the silicon wafer 10.
  • the electrode pattern When the electrode pattern is made, it plays a bearing role for the pattern beyond the silicon wafer 10 .
  • the silicon wafer 10 and the gasket 20 are both laid on the printing table.
  • an electrode pattern is produced using a one-time printing process. Specifically, the same screen plate is used and printed once to obtain the positive electrode fine grid lines 11, the negative electrode fine grid lines 12, the positive electrode 13 and the negative electrode 14. In this case, the same printing material, such as silver paste, is used for the electrode patterns. In this way, the electrode pattern can be completed in one printing process, which simplifies the process and does not require the production of main grid lines. During assembly, adjacent cells can be connected in series through the extended positive and negative electrodes. The positive electrode fine grid lines 11 and the negative electrode fine grid lines 12 are arranged in parallel and alternately. The density can be set according to actual needs.
  • two printing processes may be used to produce the electrode pattern.
  • the first printing process is used to produce the positive electrode fine grid line 11 and the negative electrode fine grid line 12 on the silicon wafer 10; the second printing process is used to produce the positive electrode 13 and the negative electrode on the edge and pad of the silicon wafer 10. 14.
  • the first printing process and the slurry of the first printing process are different.
  • the paste in the first printing process is silver paste
  • the paste in the second printing process is copper paste. Using copper paste alone to print the positive electrode 13 and the negative electrode 14 can reduce production costs.
  • the above-mentioned printing process can use screen printing, laser transfer printing, inkjet printing, 3D printing and other printing methods. They are all relatively mature processes and will not be described in detail here.
  • step S30 the electrode pattern is sintered at high temperature and the gasket 20 is removed, so that ohmic contact is generated between the electrode pattern and the silicon wafer 10, wherein the positive electrode 13 and the negative electrode 14 extend beyond the silicon wafer. Part of it is in a suspended state to facilitate subsequent connection with the positive and negative electrodes of other battery cells.
  • the gasket 20 is preferably made of a low-temperature volatile material, so that the gasket 20 vaporizes and volatilizes during the high-temperature sintering process to remove the gasket 20 , without adding other processes to remove the gasket.
  • the gasket 20 is made of a material whose vaporization temperature is less than 700° C., and may be any one of wax, ice, and resin. Among them, wax and ice can be vaporized and volatilized at a lower temperature.
  • the resin here is a volatilizable resin below 700° C. to ensure that the gasket 20 can be vaporized and volatilized during the high-temperature sintering process.
  • the thickness of the wafer 20 is the same as or slightly deviated from the thickness of the silicon wafer 10. For example, the thickness difference between the silicon wafer 10 and the gasket 20 is less than or equal to 50 ⁇ m, which serves as an extended platform surface of the silicon wafer 10 when printing electrode patterns. , when the electrode pattern is being sintered, the gasket 20 vaporizes due to high temperature.
  • the positive electrode 13 and the negative electrode 14 can be designed into different shapes.
  • the shape of the positive electrode 13 is circular and the shape of the negative electrode 14 is rectangular.
  • the part of the positive electrode 13 located in the silicon wafer 10 and connected to the positive electrode thin gate line 11 has the same shape as the positive electrode thin gate line 11 , and the part of the positive electrode 13 protrudes from the silicon wafer 10 The other part is round in shape.
  • the part of the negative electrode 14 located in the silicon wafer 10 and connected to the negative electrode thin gate line 12 has the same shape as the negative electrode thin gate line 12 , and the other part of the negative electrode 14 protrudes outside the silicon wafer 10 .
  • the shape is rectangular.
  • the area of the portion of the positive electrode 13 and the negative electrode 14 located within the silicon wafer 10 is larger than the area of the portion protruding outside the silicon wafer 10 .
  • the preparation method of the IBC battery component disclosed in the second embodiment includes the following steps:
  • Step S40 Use the preparation method of Example 1 to prepare several IBC battery sheets
  • Step S50 Arrange several IBC battery sheets in order, and electrically connect the positive electrode 13 extended from one of the two adjacent IBC battery sheets to the negative electrode 14 extended from the other, so that the two adjacent IBC battery sheets The IBC cells are connected in series.
  • conductive glue is coated on the positive electrode 13 and the negative electrode 14 of the IBC battery sheet 100 .
  • the conductive glue 30 can be printed on the positive electrode 13 and the negative electrode 14 , or can be dropped on the positive electrode 13 and the negative electrode 14 through a nozzle.
  • the size of the conductive adhesive 30 is the same as or similar to the size of the positive electrode 13 and the negative electrode 14 .
  • the center of the pattern of the conductive glue 30 is the same as the center of the pattern of the positive electrode 13 and the negative electrode 14 extending outside the silicon wafer 10 and have the same size.
  • the size of the conductive adhesive 30 cannot be large enough to contact adjacent conductive adhesives on the same silicon chip 10 .
  • the pattern of the conductive adhesive 30 can be circular, square, rectangular, etc. After applying conductive glue on the positive electrode 13 and the negative electrode 14, the positive electrode 13 of the first IBC cell 100 and the negative electrode 14 of the second IBC cell 100 are connected together through the conductive glue 30. The first IBC The negative electrode 14 of the battery piece 100 and the positive electrode 13 of the second IBC battery piece 100 are connected together through the conductive glue 30 . Later, lamination is performed, and the connection of the IBC cell sheets 100 can be realized through lamination. Since there is no need to use welding ribbons in traditional technology to connect the IBC cells 100, it is possible to avoid height differences between different IBC cells 100 caused by the welding ribbons. The height difference of each cell is exactly the same on the component side, which is huge.
  • the positive electrode 13 extended from one of the two adjacent IBC cells and the negative electrode extended from the other can also be used. 14 are electrically connected by welding.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hybrid Cells (AREA)
  • Battery Mounting, Suspending (AREA)

Abstract

本发明公开了IBC电池片、IBC电池组件及其制备方法。该制备方法包括：在硅片的相对两侧放置垫片，所述垫片的厚度小于或等于所述硅片的厚度；在所述硅片和垫片上制作电极图形，所述电极图形包括位于所述硅片上的正极细栅线和负极细栅线以及与所述正极细栅线的两端连接的正电极、与所述负极细栅线的两端连接的负电极，所述正电极的部分、所述负电极的部分均伸出于所述硅片的边缘之外并位于所述垫片上；对所述电极图形进行高温烧结并去除所述垫片。单块电池片无需制作主栅线，简化了印刷流程，在组件时通过导电胶等方式来连接相邻两块电池片的正负电极，无需通过焊带进行连接，可避免由焊带引起高度差而导致在层压时产生碎片，提高了电池组件质量。

Description

IBC电池片、IBC电池组件及其制备方法 技术领域
本发明属于光伏组件技术领域，具体地讲，涉及一种IBC电池片、IBC电池组件及其制备方法。
背景技术
现有IBC电池技术中，丝网印刷生产流程复杂，经过多次反复印刷，同时必须要印刷主栅线。另外在进行组件时还需要使用焊带进行焊接，存在制作流程复杂，生产成本高等问题，严重影响了IBC电池产品的竞争力和量产普及性，同时由于焊带引起的高度差容易导致碎片。
发明内容
(一)本发明所要解决的技术问题
本发明解决的技术问题是：如何降低IBC电池片、IBC电池组件制作流程的复杂度。
(二)本发明所采用的技术方案
一种IBC电池片的制备方法，所述制备方法包括：
在硅片的相对两侧放置垫片，所述垫片的厚度小于或等于所述硅片的厚度；
在所述硅片和垫片上制作电极图形，所述电极图形包括位于所述硅片上的正极细栅线和负极细栅线以及与所述正极细栅线的两端连接的正电极、与所述负极细栅线的两端连接的负电极，所述正电极的部分、所述负电极的部分均伸出于所述硅片的边缘之外并位于所述垫片上；
对所述电极图形进行高温烧结并去除所述垫片，其中所述正电极和所述负电极的伸出于所述硅片的部分呈悬空状态。
优选地，所述去除所述垫片的方式为：在高温烧结过程中将所述垫片气化挥发。
优选地，所述垫片的制作材料的气化温度小于700℃。
优选地，所述硅片与所述垫片的厚度差小于或等于50μm。
优选地，所述在所述硅片和垫片上制作电极图形的方法为：采用一次印刷工艺制作得到所述电极图形。
优选地，所述在所述硅片和垫片上制作电极图形的方法为：
采用第一次印刷工艺在所述硅片制作得到正极细栅线和负极细栅线；
采用第二次印刷工艺在所述硅片的边缘和所述垫片上制作得到的正电极和负电极，所述第一次印刷工艺和所述第一次印刷工艺的浆料不同。
优选地，所述正电极和所述负电极的形状不相同。
本申请还公开了一种IBC电池组件的制备方法，所述制备方法包括：
采用上述的IBC电池片的制备方法制备到若干块IBC电池片；
将若干块所述IBC电池片依次平铺排列，并将相邻两块所述IBC电池片之一伸出的所述正电极与另一伸出的所述负电极进行电连接，以使得相邻两块所述IBC电池片串联。
本申请还公开了一种IBC电池片，所述IBC电池片由上述任一种IBC电池片的制备方法制作得到。
本申请还公开了一种IBC电池组件，所述IBC电池片由上述IBC电池组件的制备方法制作得到。
(三)有益效果
本发明公开了一种IBC电池片、IBC电池组件及其制备方法，相对于传统方法，具有如下技术效果：
可以将IBC电池的金属化流程，由常规的多次印刷和多次烘干烧结，变成只需要经过1次印刷和1次烧结完成，同时在组件端省掉了焊接工序，极大的简化了生产流程，降低了生产成本，而且由于没有焊带引起的高度差，每片电池片的高度差在组件端是完全一样的，极大的减少了由于不同电池片高度不同导致的挤压应力，造成的碎片，提高了IBC电池组件的产品质量；有利于提高IBC电池的低成本化生产，提高了IBC电池的市场竞争力和普及型。
附图说明
图1为本发明的实施例的IBC电池片的制备过程示意图；
图2为本发明的实施例的涂覆导电胶之后的IBC电池片的示意图；
图3为本发明的实施例二的IBC电池组件的制备过程示意图。
附图标记与部件名称的对应关系如下：
IBC电池片100：
10硅片，11-正极细栅线，12-负极细栅线，13-正电极，14-负电极；
20-垫片；30-导电胶。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
在详细描述本申请的各个实施例之前，首先简单描述本申请的技术构思：现有技术中的IBC电池制作制作工艺往往需要进行多次印刷并制备主栅线，在进行组件时需要采用焊带进行焊接，整体的制作工艺较为复杂，且焊带引起的高度差容易造成碎片风险。为此，本申请首先制作了一种无主栅线的IBC电池片，在正负极细栅线的两端均连接有正负电极，并且正负电极的一部分伸出于硅片之外，接着在进行组件工艺时，将相邻两块IBC电池片伸出的正电极和负电极通过导电胶进行连接，实现了相邻两块IBC电池片的串联，无需采用焊带来焊接两块IBC电池片，避免了焊带的高度差引起的碎片风险。
具体地，如图1和图2所示，本实施例一的IBC电池片的制备方法包括如下步骤：
步骤S10：在硅片10的相对两侧放置垫片20，垫片20的厚度小于或等于所述硅片的厚度；
步骤S20：在所述硅片10和垫片20上制作电极图形，所述电极图形包括位于所述硅片10上的正极细栅线11和负极细栅线12以及与所述正极细栅线11的两端连接的正电极13、与所述负极细栅线12的两端连接的负电极14，所述正电极13的部分、所述负电极14的部分均伸出于所述硅片20的边缘之外并位 于所述垫片上；
步骤S30：对所述电极图形进行高温烧结并去除所述垫片，其中所述正电极13和所述负电极14的部分伸出于所述硅片10的部分呈悬浮状态。
示例性地，在步骤S10中，两侧的垫片20紧贴硅片10的边缘，垫片20的长度大于或等于硅片的长度，垫片20作为硅片10的延长平台面，在后续制作电极图形时对超出硅片10的图形起到承载作用。其中硅片10和垫片20均铺设在印刷台上。
在步骤S20中，作为优选实施例，采用一次印刷工艺制作得到电极图形。具体来说，采用同一块网版并进行一次印刷得到正极细栅线11、负极细栅线12、正电极13和负电极14，此时电极图形采用同一种印刷材料，例如银浆。这样采用一次印刷工艺即可完成电极图形，简化了工艺，且无需制作主栅线，在组件时通过伸出的正负电极来连接相邻的电池片即可实现串联。正极细栅线11和负极细栅线12平行且交替设置，正极细栅线11(如图中的实线所示)和负极细栅线12(如图中的虚线所示)的数量、疏密程度根据实际需要进行设置。
在另一种实施方式中，可采用两次印刷工艺来制作电极图形。首先采用第一次印刷工艺在硅片10制作得到正极细栅线11和负极细栅线12；采用第二次印刷工艺在硅片10的边缘和垫片上制作得到的正电极13和负电极14，第一次印刷工艺和第一次印刷工艺的浆料不同。示例性地，第一次印刷工艺的浆料为银浆，第二次印刷工艺的浆料为铜浆。单独采用铜浆印刷正电极13和负电极14，可以降低制作成本。
上述的印刷工艺可以采用丝网印刷、激光转印、喷墨打印、3D打印等印刷方式，均为较成熟的工艺，在此不进行赘述。
进一步地，在步骤S30中，对电极图形进行高温烧结并去除垫片20，使得电极图形与硅片10之间产生欧姆接触，其中正电极13和负电极14的伸出于所述硅片的部分呈悬浮状态，便于后续与其他电池片的正负电极进行连接。
示例性地，垫片20的制作材料优选为低温易挥发材料，这样垫片20在高温烧结过程中气化挥发，以去除垫片20，无需再增加其他工艺来去除垫片。
其中，垫片20的制作材料的气化温度小于700℃，例如可以采用蜡、冰、树脂中的任意一种。其中，蜡和冰在较低温度下即可气化挥发，这里的树脂为700℃以下可挥发的树脂，以保证在高温烧结过程中垫片20可被气化挥发。垫 片20的厚度与的硅片10的厚度相同或略有偏差，示例性地，硅片10和垫片20的厚度差小于或等于50μm，在印刷电极图形的时候作为硅片10的延长平台面，在烧结电极图形的时候，垫片20由于高温作用气化挥发。
在制作得到的IBC电池片中，为了区分正负电极，可将正电极13和负电极14设计成不同形状，例如正电极13的形状为圆形，负电极14的形状为矩形。在另一种实施方式中，正电极13的位于硅片10内且与正极细栅线11连接的部分，形状与正极细栅线11的形状相同，正电极13的伸出于硅片10之外的另一部分的形状为圆形。类似地，负电极14的位于硅片10内且与负极细栅线12连接的部分，形状与负极细栅线12的形状相同，负电极14的伸出于硅片10之外的另一部分的形状为矩形。进一步地，正电极13和负电极14的位于硅片10之内的部分面积大于伸出于硅片10之外的部分面积。
如图3所示，本实施例二公开的IBC电池组件的制备方法包括如下步骤：
步骤S40：采用实施例一的制备方法制备到若干块IBC电池片；
步骤S50：将若干块所述IBC电池片依次平铺排列，并将相邻两块IBC电池片之一伸出的正电极13与另一伸出的负电极14进行电连接，以使得相邻两块所述IBC电池片串联。
示例性地，在制作得到IBC电池片100之后，在IBC电池片100的正电极13和负电极14上涂覆导电胶。其中，导电胶30可以印刷在正电极13和负电极14上，也可以使用通过喷头滴在正电极13和负电极14上。导电胶30的尺寸大小与正电极13和负电极14大小相同或者相近。示例性地，导电胶30图形中心与正电极13、负电极14伸出于硅片10外的部分图形中心相同、大小相同。导电胶30尺寸不能大到与在同一块硅片10上相邻的导电胶接触。导电胶30图形可以为圆形，也可以为正方形，长方形等。在正电极13和负电极14上涂上导电胶后，第1块IBC电池片100的正电极13与第2块IBC电池片100的负电极14通过导电胶30连接在一起，第1块IBC电池片100的负电极14与第2块IBC电池片100的正电极13通过导电胶30连接在一起。后续再进行层压，经过层压可实现IBC电池片100的连接。由于无需采用传统技术中的焊带来连接IBC电池片100，可以避免焊带引起不同IBC电池片100之间产生高度差，每片电池片的高度差在组件端是完全一样的，极大的减少了由于不同电池片高度不同导致的挤压应力造成碎片，提高了IBC电池组件的产品质量。当然在其他实施方式中，也可以将相邻两块IBC电池片之一伸出的正电极13与另一伸出的负电极 14之间通过焊接的方式实现电连接。
上面对本发明的具体实施方式进行了详细描述，虽然已表示和描述了一些实施例，但本领域技术人员应该理解，在不脱离由权利要求及其等同物限定其范围的本发明的原理和精神的情况下，可以对这些实施例进行修改和完善，这些修改和完善也应在本发明的保护范围内。

Claims (10)

  1. 一种IBC电池片的制备方法，其特征在于，所述制备方法包括：
    在硅片的相对两侧放置垫片，所述垫片的厚度小于或等于所述硅片的厚度；
    在所述硅片和垫片上制作电极图形，所述电极图形包括位于所述硅片上的正极细栅线和负极细栅线以及与所述正极细栅线的两端连接的正电极、与所述负极细栅线的两端连接的负电极，所述正电极的部分、所述负电极的部分均伸出于所述硅片的边缘之外并位于所述垫片上；
    对所述电极图形进行高温烧结并去除所述垫片，其中所述正电极和所述负电极的伸出于所述硅片的部分呈悬空状态。
  2. 根据权利要求1所述的IBC电池片的制备方法，其特征在于，所述去除所述垫片的方式为：在高温烧结过程中将所述垫片气化挥发。
  3. 根据权利要求2所述的IBC电池片的制备方法，其特征在于，所述垫片的制作材料的气化温度小于700℃。
  4. 根据权利要求1所述的IBC电池片的制备方法，其特征在于，所述硅片与所述垫片的厚度差小于或等于50μm。
  5. 根据权利要求1所述的IBC电池片的制备方法，其特征在于，所述在所述硅片和垫片上制作电极图形的方法为：采用一次印刷工艺制作得到所述电极图形。
  6. 根据权利要求1所述的IBC电池片的制备方法，其特征在于，所述在所述硅片和垫片上制作电极图形的方法为：
    采用第一次印刷工艺在所述硅片制作得到正极细栅线和负极细栅线；
    采用第二次印刷工艺在所述硅片的边缘和所述垫片上制作得到的正电极和负电极，所述第一次印刷工艺和所述第一次印刷工艺的浆料不同。
  7. 根据权利要求1所述的IBC电池片的制备方法，其特征在于，所述正电极和所述负电极的形状不相同。
  8. 一种IBC电池组件的制备方法，其特征在于，所述制备方法包括：
    采用权利要求1至7任一项所述的制备方法制备到若干块IBC电池片；
    将若干块所述IBC电池片依次平铺排列，并将相邻两块所述IBC电池片之一伸出的所述正电极与另一伸出的所述负电极进行电连接，以使得相邻两块所述IBC电池片串联。
  9. 一种IBC电池片，其特征在于，所述IBC电池片由权利要求1至7任一 项所述的制备方法制作得到。
  10. 一种IBC电池组件，其特征在于，所述IBC电池组件由权利要求8所述的制备方法制作得到。
PCT/CN2023/100469 2022-06-15 2023-06-15 Ibc电池片、ibc电池组件及其制备方法 WO2023241660A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210678577.2A CN114975690B (zh) 2022-06-15 2022-06-15 Ibc电池片、ibc电池组件及其制备方法
CN202210678577.2 2022-06-15

Publications (1)

Publication Number Publication Date
WO2023241660A1 true WO2023241660A1 (zh) 2023-12-21

Family

ID=82963364

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/100469 WO2023241660A1 (zh) 2022-06-15 2023-06-15 Ibc电池片、ibc电池组件及其制备方法

Country Status (2)

Country Link
CN (1) CN114975690B (zh)
WO (1) WO2023241660A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114975690B (zh) * 2022-06-15 2024-04-26 青海黄河上游水电开发有限责任公司 Ibc电池片、ibc电池组件及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026581A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd 素子及び太陽電池
CN204348742U (zh) * 2015-01-05 2015-05-20 苏州中来光伏新材股份有限公司 无主栅高效率背接触太阳能电池及其组件
CN105336817A (zh) * 2015-11-12 2016-02-17 江苏东昇光伏科技有限公司 一种晶体硅太阳能电池片串及其制备方法
CN106057923A (zh) * 2016-07-26 2016-10-26 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池及太阳能电池组件
CN106409929A (zh) * 2016-09-30 2017-02-15 晶澳（扬州）太阳能科技有限公司 一种无主栅全背接触太阳能电池组件
US20170069776A1 (en) * 2015-09-08 2017-03-09 Lg Electronics Inc. Solar cell module and method for manufacturing the same
CN106653912A (zh) * 2017-01-22 2017-05-10 晶澳（扬州）太阳能科技有限公司 一种无栅线全背接触太阳能电池组件
CN114975690A (zh) * 2022-06-15 2022-08-30 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 Ibc电池片、ibc电池组件及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683437A (zh) * 2011-03-18 2012-09-19 陕西众森电能科技有限公司 一种太阳电池电极结构、以及太阳电池串联方法
CN106129133A (zh) * 2016-06-27 2016-11-16 泰州乐叶光伏科技有限公司 一种全背电极接触晶硅太阳能电池结构及其制备方法
CN110828600A (zh) * 2019-12-12 2020-02-21 浙江晶科能源有限公司 一种ibc电池组件及其制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026581A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd 素子及び太陽電池
CN204348742U (zh) * 2015-01-05 2015-05-20 苏州中来光伏新材股份有限公司 无主栅高效率背接触太阳能电池及其组件
US20170069776A1 (en) * 2015-09-08 2017-03-09 Lg Electronics Inc. Solar cell module and method for manufacturing the same
CN105336817A (zh) * 2015-11-12 2016-02-17 江苏东昇光伏科技有限公司 一种晶体硅太阳能电池片串及其制备方法
CN106057923A (zh) * 2016-07-26 2016-10-26 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池及太阳能电池组件
CN106409929A (zh) * 2016-09-30 2017-02-15 晶澳（扬州）太阳能科技有限公司 一种无主栅全背接触太阳能电池组件
CN106653912A (zh) * 2017-01-22 2017-05-10 晶澳（扬州）太阳能科技有限公司 一种无栅线全背接触太阳能电池组件
CN114975690A (zh) * 2022-06-15 2022-08-30 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 Ibc电池片、ibc电池组件及其制备方法

Also Published As

Publication number Publication date
CN114975690B (zh) 2024-04-26
CN114975690A (zh) 2022-08-30

Similar Documents

Publication Publication Date Title
WO2023241660A1 (zh) Ibc电池片、ibc电池组件及其制备方法
WO2018191831A1 (zh) 一种密集排布的太阳能电池串和制备方法及其组件、系统
JP2828341B2 (ja) 電気接触部及びその製造方法
WO2021232715A1 (zh) 背接触太阳能电池组件及制备方法
WO2005109524A1 (ja) 太陽電池及びその製造方法
CN105280565B (zh) 一种可提高焊接质量的功率模块结构
JPH06500671A (ja) 改良された太陽電池及びその製造方法
CN114649443B (zh) 背接触太阳能电池串及其制备方法、电池组件及光伏系统
CN204857754U (zh) 一种太阳能电池组件
WO2024108996A1 (zh) 分段低温焊带、无主栅ibc电池串、电池组件及其封装方法
CN114628542A (zh) 背接触太阳能电池串及其制备方法、电池组件及光伏系统
CN102637779A (zh) 一种聚光光伏电池片电极线定位精度的方法
CN113948610A (zh) 一种电池串、电池模组制备工艺及电池模组
CN107749399B (zh) 一种功率芯片封装方法和结构
TWM393802U (en) Solar cell and electrode structure therefor
CN101257062A (zh) 以印刷电路贴片工艺制备太阳能电池组件的方法
WO2024108873A1 (zh) 一种光伏太阳能电池组件及其制备方法
CN114373685A (zh) 一种活性金属钎焊陶瓷基板及其制作方法
WO2018218474A1 (zh) 一种提高电池板电极拉力的二次印刷工艺方法及网版
CN115132861B (zh) 一种太阳能电池栅线结构及其制作方法、太阳能电池
CN117334655A (zh) 一种应用银烧结焊片的低孔隙率界面结构及制备方法
JPH0225079A (ja) 非晶質半導体太陽電池
CN207852689U (zh) 一种叉指背接触太阳能电池片
CN207967018U (zh) 一种用于叠瓦式光伏组件的焊带及叠瓦式光伏组件
CN114725247A (zh) 电极结构的制备方法及电池串的制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23823226

Country of ref document: EP

Kind code of ref document: A1