CN114975690B - Ibc电池片、ibc电池组件及其制备方法 - Google Patents
Ibc电池片、ibc电池组件及其制备方法 Download PDFInfo
- Publication number
- CN114975690B CN114975690B CN202210678577.2A CN202210678577A CN114975690B CN 114975690 B CN114975690 B CN 114975690B CN 202210678577 A CN202210678577 A CN 202210678577A CN 114975690 B CN114975690 B CN 114975690B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- ibc battery
- grid line
- electrode
- gasket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 claims abstract description 33
- 238000007639 printing Methods 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 45
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 14
- 239000012634 fragment Substances 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hybrid Cells (AREA)
- Battery Mounting, Suspending (AREA)
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210678577.2A CN114975690B (zh) | 2022-06-15 | 2022-06-15 | Ibc电池片、ibc电池组件及其制备方法 |
PCT/CN2023/100469 WO2023241660A1 (zh) | 2022-06-15 | 2023-06-15 | Ibc电池片、ibc电池组件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210678577.2A CN114975690B (zh) | 2022-06-15 | 2022-06-15 | Ibc电池片、ibc电池组件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114975690A CN114975690A (zh) | 2022-08-30 |
CN114975690B true CN114975690B (zh) | 2024-04-26 |
Family
ID=82963364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210678577.2A Active CN114975690B (zh) | 2022-06-15 | 2022-06-15 | Ibc电池片、ibc电池组件及其制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN114975690B (zh) |
WO (1) | WO2023241660A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114975690B (zh) * | 2022-06-15 | 2024-04-26 | 青海黄河上游水电开发有限责任公司 | Ibc电池片、ibc电池组件及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683437A (zh) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | 一种太阳电池电极结构、以及太阳电池串联方法 |
CN106129133A (zh) * | 2016-06-27 | 2016-11-16 | 泰州乐叶光伏科技有限公司 | 一种全背电极接触晶硅太阳能电池结构及其制备方法 |
CN110828600A (zh) * | 2019-12-12 | 2020-02-21 | 浙江晶科能源有限公司 | 一种ibc电池组件及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5879793B2 (ja) * | 2011-07-25 | 2016-03-08 | 日立化成株式会社 | 素子の製造方法及び太陽電池の製造方法 |
CN204348742U (zh) * | 2015-01-05 | 2015-05-20 | 苏州中来光伏新材股份有限公司 | 无主栅高效率背接触太阳能电池及其组件 |
JP6307131B2 (ja) * | 2015-09-08 | 2018-04-04 | エルジー エレクトロニクス インコーポレイティド | 太陽電池モジュール及びその製造方法 |
CN105336817B (zh) * | 2015-11-12 | 2017-03-15 | 江苏东昇光伏科技有限公司 | 一种晶体硅太阳能电池片串及其制备方法 |
CN106057923B (zh) * | 2016-07-26 | 2020-10-16 | 晶澳(扬州)太阳能科技有限公司 | 一种背接触太阳能电池及太阳能电池组件 |
CN106409929B (zh) * | 2016-09-30 | 2018-12-21 | 晶澳(扬州)太阳能科技有限公司 | 一种无主栅全背接触太阳能电池组件 |
CN106653912B (zh) * | 2017-01-22 | 2023-10-24 | 晶澳(扬州)太阳能科技有限公司 | 一种无栅线全背接触太阳能电池组件 |
CN114975690B (zh) * | 2022-06-15 | 2024-04-26 | 青海黄河上游水电开发有限责任公司 | Ibc电池片、ibc电池组件及其制备方法 |
-
2022
- 2022-06-15 CN CN202210678577.2A patent/CN114975690B/zh active Active
-
2023
- 2023-06-15 WO PCT/CN2023/100469 patent/WO2023241660A1/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683437A (zh) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | 一种太阳电池电极结构、以及太阳电池串联方法 |
CN106129133A (zh) * | 2016-06-27 | 2016-11-16 | 泰州乐叶光伏科技有限公司 | 一种全背电极接触晶硅太阳能电池结构及其制备方法 |
CN110828600A (zh) * | 2019-12-12 | 2020-02-21 | 浙江晶科能源有限公司 | 一种ibc电池组件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2023241660A1 (zh) | 2023-12-21 |
CN114975690A (zh) | 2022-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105247686B (zh) | 太阳能电池单元及其制造方法、太阳能电池模块 | |
CN114975690B (zh) | Ibc电池片、ibc电池组件及其制备方法 | |
EP2184787A1 (en) | Rear surface bonding type solar cell, rear surface bonding type solar cell having wiring board, solar cell string and soar cell module | |
EP2506314A1 (en) | Manufacturing method of front electrode of solar cell | |
CN102938432B (zh) | 一种mwt太阳电池组件的制备方法 | |
WO2021232715A1 (zh) | 背接触太阳能电池组件及制备方法 | |
JP5278149B2 (ja) | 回路基板及び回路モジュール | |
CN111477702A (zh) | 背接触太阳能电池组件及其制备方法 | |
CN209199951U (zh) | 一种异质结mwt双面太阳能电池片 | |
CN115799092B (zh) | 一种功率芯片的烧结方法和功率芯片 | |
CN106607644B (zh) | 超声波焊接方法及超声波焊接装置 | |
CN109904268A (zh) | 背接触太阳电池组件及其制造方法 | |
WO2018218474A1 (zh) | 一种提高电池板电极拉力的二次印刷工艺方法及网版 | |
CN210491313U (zh) | 一种金属化陶瓷通孔基板 | |
JPH0225079A (ja) | 非晶質半導体太陽電池 | |
CN116247121A (zh) | 电池片栅线的制备方法和异质结电池 | |
CN215988783U (zh) | 一种太阳能电池及光伏组件 | |
CN114361297A (zh) | 一种太阳能电池的制备方法 | |
CN114725247A (zh) | 电极结构的制备方法及电池串的制备方法 | |
CN209675313U (zh) | 背接触太阳电池组件 | |
CN115132861B (zh) | 一种太阳能电池栅线结构及其制作方法、太阳能电池 | |
CN110310843A (zh) | 一种超级电容器芯片的制备方法、超级电容器芯片及超级电容器 | |
CN111180531A (zh) | 一种3d打印制备太阳能电池正面副栅电极的方法 | |
CN112186072A (zh) | 一种perc太阳电池的制备方法 | |
CN111180529A (zh) | 一种3d打印制备太阳能电池正面主栅电极的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240110 Address after: 810008 No. 43, Wusi West Road, Chengxi District, Xining City, Qinghai Province Applicant after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 810007 No. 4, Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Applicant before: Xining solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Applicant before: Xi'an solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |